KSC2690/2690A
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
TO-126
1
1. Emitter
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
Parameter
Value
Units
: KSC2690
: KSC2690A
120
160
V
V
Collector- Emitter Voltage
: KSC2690
: KSC2690A
120
160
V
V
V
Collector-Base Voltage
VEBO
Emitter-Base Voltage
5
IC
Collector Current (DC)
1.2
A
ICP
*Collector Current (Pulse)
2.5
A
IB
Base Current(DC)
0.3
A
PC
Collector Dissipation (Ta=25°C)
1.2
W
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB = 120V, IE = 0
Min.
Typ.
Max.
1
Units
µA
35
60
105
140
1
µA
320
IEBO
Emitter Cut-off Current
VEB = 3V, IC= 0
hFE1
hFE2
* DC Current Gain
VCE = 5V, IC = 5mA
VCE = 5V, IC = 0.3A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
0.4
0.7
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
1
1.3
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.2A
155
MHz
Cob
Output Capacitance
VCB =10V, IE =0, f = 1MHz
19
pF
V
V
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classificntion
Classification
R
O
Y
hFE2
60 ~ 120
100 ~ 200
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2690/2690A
Typical Characteristics
1.6
1000
VCE = 5V
Pulse Test
Pulse Test
IB=10mA
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
1.2
1.0
0.8
0.6
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1.4
IB=3mA
0.4
IB=2mA
IB=1mA
0.2
100
10
IB=0mA
0.0
0
10
20
30
40
50
60
70
1
1E-3
0.001
80
0.01
1
10
Figure 2. DC current Gain
10
1000
IC = 5 I B
Pulse Test
f = 1MHz
IE = 0
Cob[pF], CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
VBE (sat)
1
0.1
100
10
VCE (sat)
0.01
1E-3
1
0.01
0.1
1
10
1
IC[A], COLLECTOR CURRENT
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
1000
PW
=
10
s
0u
s)
m
50
= t ed
i
W
(P Lim
DC S/b
Dis
sip
Lim ation
ited
s
10
IC(max) DC
1
1m
100
IC(max) Pulse
s
IC[A], COLLECTOR CURRENT
VCE = 5V
Pulse Test
m
10
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
0.1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1
KSC2690 VCEO MAX
KSC2690A
VCEO MAX
0.01
1
0.01
0.1
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
1
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A, February 2000
KSC2690/2690A
Typical Characteristics (Continued)
32
140
28
PC[W], POWER DISSIPATION
160
dT[%], IC DERATING
120
100
80
S/b
60
Di
ss
Lim
ited
ipa
tio
n
40
Lim
ite
d
20
0
24
20
16
12
8
4
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A, February 2000
KSC2690/2690A
Package Demensions
8.00 ±0.30
11.00
ø3.20 ±0.10
±0.20
3.25 ±0.20
14.20MAX
3.90
±0.10
TO-126
(1.00)
(0.50)
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
16.10
±0.30
13.06
0.75 ±0.10
±0.20
1.75 ±0.20
1.60 ±0.10
+0.10
0.50 –0.05
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E