KSC1173 NPN Epitaxial Silicon Transistor

advertisement
KSC1173
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
Low Frequency Power Amplifier, Power Regulator
Collector Current : IC=3A
Collector Dissipation : PC=10W (TC=25°C)
Complement to KSA473
TO-220
1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
BVCBO
Collector-Base Voltage
30
V
BVCEO
Collector-Emitter Voltage
30
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current
3
A
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
KSC1173 Rev. A2
www.fairchildsemi.com
1
KSC1173 — NPN Epitaxial Silicon Transistor
August 2009
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 500μA, IE = 0
30
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA IB = 0
30
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -1mA, IC = 0
5
ICBO
Collector Cut-off Current
VCB = 20V, IE = 0
1.0
μA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1.0
μA
hFE1
hFE2
DC Current Gain
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2.5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.2A
0.3
0.8
V
VBE(on)
Base-Emitter On Voltage
VCE = 2V, IC = 0.5A
0.75
1.0
V
Current Gain Base Width Product
VCE = 2V, IC = 0.5A
100
MHz
Output Capacitance
VCB = 10V, IE =0,
f = 1MHz
35
pF
fT
Cob
70
25
240
hFE Classification
Classification
O
Y
hFE1
70 ~ 140
120 ~ 240
© 2009 Fairchild Semiconductor Corporation
KSC1173 Rev. A2
www.fairchildsemi.com
2
KSC1173 — NPN Epitaxial Silicon Transistor
Electrical Characteristics
KSC1173 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
4.5
1000
VCE = 2V
IC[A], COLLECTOR CURRENT
4.0
3.5
hFE, DC CURRENT GAIN
IB = 40mA I = 30mA
B
3.0
IB = 20mA
2.5
IB = 15mA
2.0
IB = 10mA
1.5
IB = 8mA
1.0
IB = 5mA
0.5
100
IB = 3mA
0.0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
10
0.01
7.2
0.1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
4.5
10
VCE=2V
IC(A), COLLECTOR CURRENT
IC = 10 IB
1
1
VBE(sat)
0.1
VCE(sat)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.01
0.01
0.1
0.0
0.0
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VBE(V), BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
IE=0
f=1MHz
Cob[pF], CAPACITANCE
IC[A], COLLECTOR CURRENT
IC MAX(Pulse)
10
10
100
*10ms
IC MAX(DC)
1ms
*50ms
Thermal
limitation
Tc=25?
1
S/B Limitation
*Single Pulse
0.1
1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
KSC1173 Rev. A2
0.2
www.fairchildsemi.com
3
KSC1173 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
(Continued)
16
PD[W], POWER DISSIPATION
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
© 2009 Fairchild Semiconductor Corporation
KSC1173 Rev. A2
www.fairchildsemi.com
4
KSC1173 — NPN Epitaxial Silicon Transistor
Physical Dimensions
TO-220
© 2009 Fairchild Semiconductor Corporation
KSC1173 Rev. A2
www.fairchildsemi.com
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower¥
Auto-SPM¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
®
FACT
FAST®
FastvCore¥
FETBench¥
FlashWriter®*
FPS¥
F-PFS¥
FRFET®
SM
Global Power Resource
Green FPS¥
Green FPS¥ e-Series¥
Gmax™
GTO¥
IntelliMAX¥
ISOPLANAR¥
MegaBuck™
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
®
OPTOPLANAR
®
PDP SPM™
Power-SPM¥
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START¥
SPM®
STEALTH™
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS™
SyncFET™
Sync-Lock™
®
*
The Power Franchise®
TinyBoost¥
TinyBuck¥
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TriFault Detect¥
TRUECURRENT¥*
PSerDes¥
®
UHC
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Download