CBR1-D020S SERIES
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SURFACE MOUNT
1 AMP
SILICON BRIDGE RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1-D020S series
types are silicon full wave bridge rectifiers mounted in a
durable epoxy surface mount molded case, utilizing glass
passivated chips.
NOTE: Also available in Fast Recovery, please
contact factory for details.
MARKING: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reve
Average Forward Current (TA=50°C)
Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
Operating and Storage
Junction Temperature
CBR1D020S
CBR1D040S
CBR1D060S
VRRM
VR
200
400
600
800
1000
V
200
400
600
800
1000
V
VR(RMS)
IO
140
280
420
560
700
SYMBOL
VF
CJ
UNITS
V
A
IFSM
I2t
50
A
10
A2s
TJ, Tstg
-65 to +150
°C
VR=Rated VRRM
VR=Rated VRRM, TA=125°C
IF=1.0A
VR=4.0V, f=1.0MHz
CBR1D100S
1.0
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
IR
CBR1D080S
MAX
10
µA
0.5
mA
1.1
25
UNITS
V
pF
R3 (4-January 2010)
CBR1-D020S SERIES
SURFACE MOUNT
1 AMP
SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R3 (4-January 2010)
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www.centralsemi.com
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