KSC2233
KSC2233
B/W TV Horizontal Deflection Output
• Collector-Base Voltage : VCBO = 200V
• Collector Current (DC) : IC = 4A
• Collector Dissipation : PC = 40W
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
200
Units
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
4
A
PC
Collector Dissipation (TC=25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ +150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
200
BVCEO
Collector-Emitter Breakdown Voltage
IC = 20mA, IB =0
60
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
5
ICBO
Collector Cut-off Current
VCB = 170V, IE = 0
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 1A
VCE = 5V, IC = 4A
Typ.
Max.
V
V
10
30
20
Units
V
µA
150
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 4A, IB = 0.4A
1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 4A, IB = 0.4A
1.5
V
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.5A
©2000 Fairchild Semiconductor International
10
MHz
Rev. A, February 2000
KSC2233
Typical Characteristics
5
4
3
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
VCE = 5V
IB = 50 mA
IB = 45 mA
IB = 40 mA
IB = 35 mA
IB = 30 mA
IB = 25 mA
IB = 20 mA
2
IB = 15 mA
IB = 10 mA
1
1000
100
IB = 5 mA
10
0.01
0
0
4
8
12
16
20
0.1
Figure 2. DC current Gain
10
1000
IC = 10 IB
f = 1 MHz
IE=0
COB(pF), CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
V BE(sat)
0.1
V CE(sat)
0.01
0.01
100
10
0.1
1
10
1
IC[A], COLLECTOR CURRENT
10
100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
80
S/B limitation
Thermal limitation
*10ms
*200ms
1
S/B limitation
o
1. T=25 C
2. *Single pulse
0.1
PD[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
1
60
40
20
0
10
100
V CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
KSC2233
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E