Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1240
General Description
Features
BCD ITVS (Integrated Transient Voltage Suppression)
devices are designed and built using BCD proprietary
process technology. These devices integrate the
various diodes, transistors and resistors into the BCD
ITVS products. These diodes and transistors feature
low parasitic resistance and the diodes also exhibit
low capacitance. Using these devices, BCD is able to
design voltage clamping products where low
capacitance associated with low dynamic resistance is
required.
•
The BCD AT1240 is designed to compensate for the
capacitance
variance
introduced
by
the
DFN-2.5×1.0-10 package allowing for capacitance
matching between the 4 I/Os when, as in normal
operation, pins, 1 and 10, 2 and 9, 4 and 7, 5 and 6 are
shorted.
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
The AT1240 is available in the DFN-2.5×1.0-10
package. This package allows simple and optimal
placement in existing high-speed PCB layouts.
Clamping Voltage: 9V at 10A 100ns, TLP
10.5V at 6A 8μs/20μs
IEC 61000-4-2: ±16kV (Air)
±14kV (Contact)
IEC 61000-4-4: TBD
IEC 61000-4-5: ±6A
Input Capacitance from I/O to VSS: 0.5pF
TLP Dynamic Resistance: 0.25Ω
Monolithic Silicon Technology
USB 3.0
USB 2.0
DVI
Ethernet Port: 10/100/1000 Mb/s
HDMI 1.3, High Definition Multi Media
IEEE 1394 to 3.2Gb/s
MDDI
PCI Express
SATA /eSATA
Pin Configuration
DN Package
(DFN-2.5×1.0-10)
Pin 1 Mark
NC
1
10
I/O1
I/O2
2
9
NC
VSS
3
8
VSS
I/O3
4
7
NC
NC
5
6
I/O4
Figure 1. Pin Configuration of AT1240 (Top View)
Jan. 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1240
Circuit Diagram
Figure 2. Circuit Diagram of AT1240
Ordering Information
AT1240
-
Circuit Type
G1: Green
Package
DN: DFN-2.5×1.0-10
TR: Tape & Reel
5.0: Fixed Output 5.0V
Package
Temperature
Range
DFN-2.5×1.0-10
-55 to 85°C
Part Number
AT1240DN-5.0TRG1
Marking ID
BGC
Packing Type
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Jan. 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1240
Absolute Maximum Ratings (Note 1)
Parameter
Min
Symbol
Typ
Max
Unit
Peak Pulse Current (tp 8μs/20μs)
6
A
Peak Pulse Power (tp 8μs/20μs)
65
W
Operating Voltage (DC)
-0.5
6
V
IEC61000-4-2 ESD (Air)
-16
16
kV
IEC61000-4-2 ESD (Contact)
-14
14
kV
6
A
65
W
IEC61000-4-5 (Lightning)
Lead Temperature (Soldering, 10sec)
260
ºC
Operating Temperature
TLEAD
-55
85
ºC
Storage Temperature
-55
150
ºC
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Electrical Characteristics
TA=25ºC, unless otherwise specified.
Parameter
Symbol
Conditions
Reverse Working Voltage, I/O to VSS
II/O-VSS=1mA
Forward Working Voltage, I/O to VSS
IF= –1mA
Channel Leakage Current
IR
Reverse Breakdown Voltage
VBR
Holding Voltage
VH
Clamping
Voltage
(IEC61000-4-5)
Typ
-0.7
At 1mA
μA
V
5.5
V
10.5
V
9.5
At 10A, TLP, 100ns
9
Dynamic Reverse Resistance
RDIFF-R
0.25
Dynamic Forward Resistance
RDIFF-F
0.15
Delta CI/O
V
5.5
VTRIG
VI/O=2.5V, VSS=0V,
f=1MHz
CI/O (Note 2)
Unit
V
0.5
At 6A
ESD Clamping Voltage
Channel Input Capacitance (I/O to VSS)
Max
5.5
Operating Voltage
(Surge)
Trigger Voltage
Min
CI/OMAX-CI/OMIN
0.55
0.04
V
V
0.3
Ω
Ω
0.65
pF
pF
Note 2: CI/O1=CPIN1+C PIN10, CI/O2=CPIN2+C PIN9, CI/O3=CPIN4+C PIN7, CI/O4=CPIN5+C PIN6.
Jan. 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1240
Typical Performance Characteristics
TA=25°C, unless otherwise specified.
11
10
Current from I/O to VSS (A)
BV, Trigger Voltage, Holding Voltage (V)
8.5
8.0
7.5
7.0
6.5
BV
VTRIG
6.0
VH
9
8
7
6
5
4
3
2
5.5
1
5.0
0
-60
-40
-20
0
20
40
60
80
100
120
0
140
1
2
3
4
5
6
7
8
9
10
Voltage from I/O to VSS (V)
o
Temperature ( C)
Figure 3. BV, Trigger Voltage, Holding Voltage
vs. Temperature
Figure 4. Current from I/O to VSS
vs. Voltage from I/O to VSS
11.5
Clamping Voltage (V)
11.0
10.5
10.0
VCLAMP=10.5V
5V/div
9.5
9.0
8.5
8.0
IEC 61000-4-5 (Lightning)
7.5
7.0
6.5
1
2
3
4
5
Current from I/O to VSS (8μs/20μs) (A)
6
Current
Waveform,
(Surge, 8x20 μs,
IPP=5.8A)
7
5V/div
Time
Figure 6. Waveform of I/O to VSS (Positive)
vs. Current from I/O to VSS (8μs/20μs)
Figure 5. Clamping Voltage
Jan. 2013
10μs/div
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1240
Typical Performance Characteristics (Continued)
TA=25°C, unless otherwise specified.
1.0
0.9
Input Capacitance (pF)
o
f=1MHz, TA=25 C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Input Voltage (V)
Figure 7. Input Capacitance vs. Input Voltage
Jan. 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1240
Mechanical Dimensions
DFN-2.5×1.0-10
Unit:
Jan. 2013
Rev. 1. 1
mm(inch) M I N
mm(inch) MAX
BCD Semiconductor Manufacturing Limited
6
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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