NTMFS5C646NL
Power MOSFET
60 V, 4.7 mW, 93 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Value
Unit
VDSS
60
V
VGS
±20
V
ID
93
A
Steady
State
PD
ID
W
79
PD
D (5)
G (4)
S (1,2,3)
W
3.7
MARKING
DIAGRAM
1.8
750
A
TJ, Tstg
−55 to
+175
°C
IS
100
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 5 A)
EAS
185
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
93 A
6.3 mW @ 4.5 V
N−CHANNEL MOSFET
IDM
Operating Junction and Storage Temperature
4.7 mW @ 10 V
A
20
14
TA = 100°C
TA = 25°C, tp = 10 ms
ID MAX
40
TA = 100°C
TA = 25°C
RDS(ON) MAX
65
TC = 100°C
TA = 25°C
V(BR)DSS
60 V
Symbol
TC = 100°C
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Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C646L
A
Y
W
ZZ
S
S
S
G
D
5C646L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
Parameter
RqJC
1.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
41
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
1
Publication Order Number:
NTMFS5C646NL/D
NTMFS5C646NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
15.5
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.9
VGS = 10 V
ID = 50 A
3.8
4.7
VGS = 4.5 V
ID = 50 A
5.0
6.3
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
105
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2164
VGS = 0 V, f = 1 MHz, VDS = 25 V
900
pF
17
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 25 A
15.7
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 25 A
33.7
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
1.5
nC
5.6
VGS = 4.5 V, VDS = 30 V; ID = 25 A
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
5.1
2.8
td(ON)
10.4
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 25 A, RG = 2.5 W
tf
14.9
ns
23.6
5.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.88
TJ = 125°C
0.78
tRR
ta
tb
1.2
V
40.9
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
20.8
ns
20.1
32
nC
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NTMFS5C646NL
3.8 V
140 10 V to
4.5 V
120
3.6 V
100
3.4 V
80
3.2 V
60
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
3.0 V
40
2.8 V
20
0
0.5
1.0
1.5
2.0
2.5
TJ = 25°C
TJ = −55°C
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
7
6
5
4
3
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
4.0
7
TJ = 25°C
6
VGS = 4.5 V
5
VGS = 10 V
4
3
10
30
50
70
90
110
130
150
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
100,000
1.8
VGS = 10 V
ID = 40 A
TJ = 125°C
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
8
3
TJ = 125°C
0
3.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
10,000
TJ = 85°C
1000
100
0.8
0.6
−50 −25
10
0
25
50
75
100
125
150
175
5
15
25
35
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
55
NTMFS5C646NL
10,000
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
C, CAPACITANCE (pF)
CISS
1000
COSS
100
10
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
10
20
30
40
50
30
QT
25
8
20
6
15
QGD
QGS
4
10
VDS = 30 V
TJ = 25°C
ID = 25 A
2
5
0
60
0
0
4
8
12
16
20
24
32
28
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
t, TIME (ns)
VGS = 4.5 V
VDD = 30 V
ID = 25 A
IS, SOURCE CURRENT (A)
1000
td(off)
tf
100
tr
td(on)
10
1
10
TJ = 125°C
1
1
10
100
0.3
0.4
0.5
TJ = 25°C
0.6
0.7
0.8
TJ = −55°C
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
TC = 25°C
VGS ≤ 10 V
0.01 ms
ID (A)
IPEAK (A)
0.1 ms
100
1 ms
10 ms
dc
TJ(initial) = 25°C
10
TJ(initial) = 100°C
10
RDS(on) Limit
Thermal Limit
Package Limit
1
1
0.1
1
10
100
1E−04
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NTMFS5C646NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5C646NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C646NLT1G
5C646L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C646NLT3G
5C646L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS5C646NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
0.20 C
D
A
2
B
D1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
c
DETAIL A
RECOMMENDED
SOLDERING FOOTPRINT*
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
0.495
e/2
4.560
2X
e
L
1
1.530
4
K
3.200
4.530
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
G
1
D2
0.965
BOTTOM VIEW
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5C646NL/D