®
OPA2107
OPA
210
7
OPA
2107
Precision Dual Difet ®
OPERATIONAL AMPLIFIER
FEATURES
APPLICATIONS
● VERY LOW NOISE: 8nV/√Hz at 10kHz
● LOW VOS: 1mV max
● DATA ACQUISITION
● DAC OUTPUT AMPLIFIER
● LOW DRIFT: 10µV/°C max
● LOW IB: 10pA max
● FAST SETTLING TIME: 2µs to 0.01%
● UNITY-GAIN STABLE
● OPTOELECTRONICS
● HIGH-IMPEDANCE SENSOR AMPS
● HIGH-PERFORMANCE AUDIO CIRCUITRY
● MEDICAL EQUIPMENT, CT SCANNERS
DESCRIPTION
+V S
The OPA2107 dual operational amplifier provides
precision Difet performance with the cost and space
savings of a dual op amp. It is useful in a wide range
of precision and low-noise analog circuitry and can be
used to upgrade the performance of designs currently
using BIFET® type amplifiers.
(8)
–In
(2, 6)
The OPA2107 is fabricated on a proprietary
dielectrically isolated (Difet ) process. This holds input bias currents to very low levels without sacrificing
other important parameters, such as input offset voltage, drift and noise. Laser-trimmed input circuitry
yields excellent DC performance. Superior dynamic
performance is achieved, yet quiescent current is held
to under 2.5mA per amplifier. The OPA2107 is unitygain stable.
+In
(3, 5)
Cascode
Output
(1, 7)
–V S
(4)
The OPA2107 is available in plastic DIP and SOIC
packages. Industrial temperature range versions are
available.
Difet® Burr-Brown Corp.
BIFET® National Semiconductor
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
®
©
1989 Burr-Brown Corporation
PDS-863E
1
OPA2107
Printed in U.S.A. April, 1998
SPECIFICATIONS
At TA = +25°C, VS = ±15V, unless otherwise noted.
OPA2107AP, AU
PARAMETER
CONDITION
OFFSET VOLTAGE(1)
Input Offset Voltage
Over Specified Temperature
Average Drift Over Specified Temperature
Power Supply Rejection
INPUT BIAS CURRENT(1)
Input Bias Current
Over Specified Temperature
Input Offset Current
Over Specified Temperature
INPUT NOISE
Voltage: f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
BW = 0.1 to 10Hz
BW = 10 to 10kHz
Current: f = 0.1Hz thru 20kHz
BW = 0.1Hz to 10Hz
MIN
TYP
MAX
UNITS
1
2
10
80
100
0.5
3
96
mV
mV
µV/°C
dB
4
0.25
1
10
1.5
8
1
pA
nA
pA
nA
VCM = 0V
VS = ±10 to ±18V
VCM = 0V
VCM = 0V
RS = 0
30
12
9
8
1.2
0.85
1.2
23
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
µVp-p
µVrms
fA/√Hz
fAp-p
1013 || 2
1014 || 4
Ω || pF
Ω || pF
±10.5
±10.2
80
±11
±10.5
94
V
V
dB
VO = ±10V, RL = 2kΩ
82
80
96
94
dB
dB
G = +1
G = –1, 10V Step
13
18
1.5
2
4.5
0.001
120
V/µs
µs
µs
MHz
%
dB
±15
±4.5
V
V
mA
±12
±11.5
±40
70
1000
V
V
mA
Ω
pF
INPUT IMPEDANCE
Differential
Common-Mode
INPUT VOLTAGE RANGE
Common-Mode Input Range
Over Specified Temperature
Common-Mode Rejection
OPEN-LOOP GAIN
Open-Loop Voltage Gain
Over Specified Temperature
DYNAMIC RESPONSE
Slew Rate
Settling Time: 0.1%
0.01%
Gain Bandwidth Product
THD + Noise
Channel Separation
VCM = ±10V
G = 100
G = +1, f = 1kHz
f = 100Hz, RL = 2kΩ
POWER SUPPLY
Specified Operating Voltage
Operating Voltage Range
Current
OUTPUT
Voltage Output
Over Specified Temperature
Short Circuit Current
Output Resistance, Open-Loop
Capacitive Load Stability
±4.5
±11
±10.5
±10
RL = 2kΩ
1MHz
G = +1
TEMPERATURE RANGE
Specification
Operating
Storage
Thermal Resistance (θJ-A)
8-Pin DIP
8-Lead Surface Mount
–25
–25
–40
90
175
NOTE: (1) Specified with devices fully warmed up.
®
OPA2107
+85
+85
+125
2
°C
°C
°C
°C/W
°C/W
ABSOLUTE MAXIMUM RATINGS(1)
PIN CONFIGURATION
Top View
Supply Voltage ................................................................................... ±18V
Input Voltage Range ..................................................................... ±VS ±2V
Differential Input Voltage ........................................................ Total VS ±4V
Operating Temperature
P and U Packages ........................................................ –25°C to + 85°C
Storage Temperature
P and U Packages ....................................................... –40°C to +125°C
Output Short Circuit to Ground (TA = +25°C) ........................... Continuous
Junction Temperature .................................................................... +175°C
Lead Temperature
P Package (soldering, 10s) ......................................................... +300°C
U Package, SOIC (3s) ................................................................ +260°C
DIP, SOIC
8 +V S
Out A 1
–In A 2
+In A 3
–VS 4
A
7 Out B
B
6 –In B
5 +In B
NOTE: Stresses above these ratings may cause permanent damage.
PACKAGE/ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
PRODUCT
PACKAGE
PACKAGE
DRAWING
NUMBER(1)
OPA2107AP
OPA2107AU
Plastic DIP
SO-8 SOIC
006
182
TEMPERATURE
RANGE
–25 to +85°C
–25 to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
3
OPA2107
TYPICAL PERFORMANCE CURVES
TA = +25°C, VS = ±15V unless otherwise noted.
INPUT VOLTAGE AND CURRENT NOISE
SPECTRAL DENSITY vs FREQUENCY
TOTAL INPUT VOLTAGE NOISE SPECTRAL DENSITY
at 1kHz vs SOURCE RESISTANCE
100
Current Noise
10
10
1
Current Noise
Voltage Noise, E O (n/V/ Hz)
Voltage Noise
100
1k
Current Noise (ƒA/ Hz)
Voltage Noise (nV/ Hz)
1k
Voltage Noise
EO
RS
100
OPA2107 + Resistor
10
Resistor Noise Only
0.1
10
100
1k
10k
100k
1M
100
10k
100k
1M
10M
Source Resistance ( Ω)
INPUT BIAS AND OFFSET CURRENT
vs TEMPERATURE
INPUT BIAS AND OFFSET CURRENT
vs INPUT COMMON-MODE VOLTAGE
10nA
1nA
1nA
100
100
Bias Current
10
10
1
0
+25
+50
+75
10
Offset Current
1
1
0.1
0.1
1
Offset Current
–25
100M
10
Bias Current (pA)
10nA
1
0.1
–50
1k
Frequency (Hz)
Offset Current (pA)
Bias Current (pA)
1
1
+100
0.01
0.01
0.1
+125
–15
–10
–5
0
+5
+10
Ambient Temperature (°C)
Common-Mode Voltage (V)
POWER SUPPLY AND COMMON-MODE
REJECTION vs FREQUENCY
COMMON-MODE REJECTION
vs INPUT COMMON-MODE VOLTAGE
110
120
120
+15
100
100
80
80
–PSR
60
Common-Mode Rejection (dB)
PSR, CMR (dB)
+PSR
60
CMR
40
40
20
20
10
100
1k
10k
100k
1M
80
–15
10M
–10
–5
0
+5
Common-Mode Voltage (V)
Frequency (Hz)
®
OPA2107
90
70
0
0
100
4
+10
+15
Offset Current (pA)
1
TYPICAL PERFORMANCE CURVES (CONT)
TA = +25°C, VS = ±15V unless otherwise noted.
MAXIMUM OUTPUT VOLTAGE SWING
vs FREQUENCY
OPEN-LOOP FREQUENCY RESPONSE
0
Voltage Gain (dB)
–45
80
φ
60
40
–90
AOL
–135
Output Voltage (Vp-p)
RL = 2kΩ
CL = 100pF
100
30
Phase Shift (Degrees)
120
20
R L = 2k Ω
10
20
0
10k
–180
1
10
100
1k
10k
100k
1M
10M
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
GAIN-BANDWIDTH AND SLEW RATE
vs TEMPERATURE
GAIN-BANDWIDTH AND SLEW RATE
vs SUPPLY VOLTAGE
25
8
22
6
Slew Rate
Gain-Bandwidth
4
15
Gain-Bandwidth (MHz)
20
6
Slew Rate (V/µs)
Gain-Bandwidth (MHz)
A V = +100
RL = 2k Ω
10
2
20
5
18
Slew Rate
Slew Rate (V/µs)
0
16
Gain-Bandwidth
5
+125
0
–50
–25
0
+25
+50
+75
+100
14
4
5
10
Ambient Temperature (°C)
15
20
Supply Voltage (±VS )
SETTLING TIME vs CLOSED-LOOP GAIN
SUPPLY CURRENT vs TEMPERATURE
5
7
Supply Current (mA)
Settling Time (µs)
4
0.01%
3
VO = 10V Step
RL = 2k Ω
2
0.1%
CL = 100pF
1
6
Total of Both Op Amps
5
4
3
0
–1
–10
–100
–50
–1000
–25
0
+25
+50
+75
+100
+125
Ambient Temperature (°C)
Closed-Loop Gain (V/V)
®
5
OPA2107
TYPICAL PERFORMANCE CURVES (CONT)
TA = +25°C, V S = ±15V unless otherwise noted.
CHANNEL SEPARATION vs FREQUENCY
OPEN-LOOP GAIN vs SUPPLY VOLTAGE
120
110
140
RL =
∞
Voltage Gain (dB)
Channel Separation (dB)
150
130
RL = 2k Ω
120
100
90
80
110
70
10
100
1k
10k
100k
5
10
Frequency (Hz)
15
THD + NOISE vs FREQUENCY AND OUTPUT VOLTAGE
TOTAL HARMONIC DISTORTION vs FREQUENCY
1
1
THD + Noise (%rms)
A V = +11V/V
2k Ω
RS
A V = +101V/V
0.01
RS
A V = +1V/V
0.001
1
10
2k Ω
0.1
Noise Limited
0.01
A V = +11V/V
Noise Limited
10Vp-p
Noise Limited
20Vp-p
2Vp-p
0.001
100
1k
10k
1
100k
10
100
1k
OPA2107 SMALL-SIGNAL RESPONSE
Output Voltage (20mV/div)
OPA2107 LARGE-SIGNAL RESPONSE
Time (2µs/div)
Time (200ns/div)
®
OPA2107
10k
Frequency (Hz)
Frequency (Hz)
Output Voltage (5V/div)
THD + Noise (%rms)
6.5Vrms
0.1
20
Supply Voltage (±VS )
6
100k
APPLICATIONS INFORMATION
AND CIRCUITS
–In
The OPA2107 is unity-gain stable and has excellent phase
margin. This makes it easy to use in a wide variety of
applications.
RG
3
3
A
Output
25kΩ
25kΩ
7
B
5
1
IB = 5pA Max
Gain = 100
~ 95dB
CMRR ~
RIN = 1013Ω
Differential Voltage Gain = 1 + 2RF/RG = 100
FIGURE 2. FET Input Instrumentation Amplifier.
E1
–In
1/2
OPA2107
3
1
A
2
INA106
RF
2
10kΩ
100kΩ
5
10kΩ
RG
202Ω
6
RF
6
5
3
EO
Output
10kΩ
10kΩ
100kΩ
B
7
1
1/2
OPA2107
Buffer
In
6
3
1/2
OPA2107
2
A
5
5kΩ
6
E2
+In
In
25kΩ
101Ω
RF
A circuit board guard pattern effectively reduces errors due
to circuit board leakage (Figure 1). By encircling critical
high impedance nodes with a low impedance connection at
the same circuit potential, any leakage currents will flow
harmlessly to the low impedance node. Guard traces should
be placed on all levels of a multiple-layer circuit board.
Out
2
25kΩ
5kΩ
INPUT BIAS CURRENT
The OPA2107’s Difet input stages have very low input bias
current—an order of magnitude lower than BIFET op amps.
Circuit board leakage paths can significantly degrade performance. This is especially evident with the SO-8 surfacemount package where pin-to-pin dimensions are particularly
small. Residual soldering flux, dirt, and oils, which conduct
leakage current, can be removed by proper cleaning. In most
instances a two-step cleaning process is adequate using a
clean organic solvent rinse followed by de-ionized water.
Each rinse should be followed by a 30-minute bake at 85°C.
1
INA105
RF
+In
2
1
A
2
Power supply connections should be bypassed with capacitors positioned close to the amplifier pins. In most cases,
0.1µF ceramic capacitors are adequate. Applications with
larger load currents and fast transient signals may need up to
1µF tantalum bypass capacitors.
Inverting
1/2
OPA2107
3
1
EO = [10 (1 + 2RF /RG) (E2 – E1)] = 1000 (E2 – E1)
Out
Using the INA106 for an output difference amplifier extends the input
common-mode range of an instrumentation amplifier to ±10V. A conventional IA with a unity-gain difference amplifier has an input common-mode
range limited to ±5V for an output swing of ±10V. This is because a unitygain difference amp needs ±5V at the input for 10V at the output, allowing
only 5V additional for common-mode range.
Non-Inverting
2
In
3
A
1
Out
FIGURE 3. Precision Instrumentation Amplifier.
FIGURE 1. Connection of Input Guard.
®
7
OPA2107
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.