AND9459/D
AM Radio Amplifier with Filter
using the NSVJ3910SB3
Overview
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This application note explains about ON Semiconductor’s NSVJ3910SB3
which is used as a Low Noise Amplifier (LNA) for AM Radio.
APPLICATION NOTE
The NSVJ3910SB3 is a silicon junction field effect transistor best suited
for high-frequency applications which is assembled in the 3-pin surface
mount package.
For information about the performance, please refer to the datasheet of
this product.
The evaluation board is adjusted to provide +9.5dB gain in AM band (520
to 1720 kHz) and reduce gain to 80dB in FM band (76 to 108 MHz).
A standard material FR4 is used for the printed circuit board (PCB).
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number:
AND9459/D
AND9459/D
■Summary of Data
Ta = 25ºC, Input Power = -40 dBm, Zo = 50 
Parameter
Symbol
DC Voltage
DC Current
Result
Unit
Vdd
5.0
V
Idd
26.5
mA
Gp1
Condition
f = 520 kHz
9.45
f = 1120 kHz
9.85
f = 1720 kHz
9.81
f = 76 MHz
-89.9
f = 90 MHz
-87.6
f = 108 MHz
-82.3
f = 520 kHz
-0.03
f = 1120 kHz
-0.19
f = 1720 kHz
-0.48
f = 520 kHz
-0.81
f = 1120 kHz
-1.08
f = 1720 kHz
-1.67
f = 520 kHz
-48.2
f = 1120 kHz
-41.5
f = 1720 kHz
-37.9
Power Gain
dB
Gp2
Input Return Loss
Output Return Loss
Isolation
RLin
RLout
ISL
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2
dB
dB
dB
AND9459/D
■Circuit Design
Vdd = 5V
INPUT
C4
L1
L2
R7
R2
R4
L3
FET1
R1
C1
■Evaluation Board
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3
C5
OUTPUT
R5
R3
R6
C7
C3
L4
C2
C6
AND9459/D
■Bill of Materials
Item
Symbol
Value
Manufacture
Size
J-FET
FET1
NSVJ3910SB3
ON Semiconductor
SC-59
C1
10 pF
Murata GRM155
1005
C2
12 pF
Murata GQM188
1608
C3
120 pF
Murata GRM155
1005
C4,C5,C6,C7
0.1 uF
ROHM MCH182CN
1608
R1
22 k
Various
1608
R2
270 
Various
1608
R3
100 k
Various
1608
R4
150 
Various
1608
R5
100 k
Various
1608
R6
4.7 
Various
1608
R7
120 k
Various
1608
L1,L2,L3
3.3 uH
TDK NLV25T
2520
L4
330 uH
TDK NLCV32T
3225
Capacitor
Resistor
Inductor
Material
FR-4
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4
25 x 13 mm
AND9459/D
■Measurement Results
16
0
14
‐10
‐20
Isolation ‐ dB
Power Gain ‐ dB
12
10
8
6
‐30
‐40
‐50
4
‐60
2
0
‐70
0.1
1
Frequency ‐ MHz
0.1
10
10
Figure 2 Isolation vs. Frequency
0
‐1
‐2
‐2
Output Return Loss ‐ dB
0
‐1
‐3
‐4
‐5
‐6
‐7
‐8
‐9
‐3
‐4
‐5
‐6
‐7
‐8
‐9
‐10
‐10
0.1
1
Frequency ‐ MHz
10
0.1
1
Frequency ‐ MHz
Figure 4 Output Return Loss vs. Frequency
S(4,4)
Figure 3 Input Return Loss vs. Frequency
S(3,3)
Input Return Loss ‐ dB
Figure 1 Power Gain vs. Frequency
1
Frequency ‐ MHz
freq (520.0kHz
1.720MHz)
520
kHz to to1720
KHz
freq (520.0kHz
1.720MHz)
520
kHz toto1720
kHz
Figure 5 Smith Chart S11
Figure 6 Smith Chart S22
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5
10
AND9459/D
20
10
0
‐10
‐20
‐30
‐40
‐50
‐60
‐70
‐80
‐90
‐100
16
S21
S11

14

S22
12
Power Gain ‐ dB
S11,S21,S12,S22 ‐ dB
■Measurement Results
S12
10
6V
7V


3V
8
6
4
2
0
0.1
1
10
Frequency ‐ MHz
100
1000
0.1
Figure 7 Wide Span
1
Frequency ‐ MHz
Figure 8 Voltage Dependency
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