IRF630
IRF630FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
IRF630
IRF630FI
■
■
■
■
■
V DSS
R DS( on)
ID
200 V
200 V
< 0.4 Ω
< 0.4 Ω
10 A
6A
TYPICAL RDS(on) = 0.25 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH SPEED SWITCHING
■
UNINTERRUPTIBLE POWER SUPPLY (UPS)
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
INDUSTRIAL ACTUATORS
■
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
■
3
1
3
2
1
TO-220
2
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
IRF630
VD S
V DG R
V GS
200
V
Drain- gate Voltage (R GS = 20 kΩ)
200
V
± 20
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
ID
Drain Current (continuous) at T c = 100 oC
P tot
V ISO
T stg
Tj
IRF630FI
Drain-source Voltage (V GS = 0)
ID
ID M(•)
Unit
Drain Current (pulsed)
o
V
10
6
A
6
3
A
40
40
A
Total Dissipation at Tc = 25 C
100
35
W
Derating Factor
0.8
0.28
W/o C
Insulation Withstand Voltage (DC)

2000
Storage Temperature
Max. Operating Junction Temperature
V
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1993
1/6
IRF630/FI
THERMAL DATA
R thj-cas e
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
TO-220
ISOWATT220
1.25
3.57
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
C/W
62.5
0.5
300
o
C/W
C/W
o
C
Max Value
Unit
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
10
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR, VD D = 25 V)
60
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
15
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
6
A
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Min.
VG S = 0
Typ.
Max.
200
I DS S
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IG SS
Gate-body Leakage
Current (V D S = 0)
Unit
V
T c = 125 oC
V GS = ± 20 V
250
1000
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
ID = 250 µA
V G S(th)
Gate Threshold Voltage V DS = V GS
R DS( on)
Static Drain-source On
Resistance
V GS = 10V ID = 5 A
V GS = 10V I D = 5 A
I D( on)
On State Drain Current
V DS > ID( on) x RD S(on) max
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.25
0.4
0.8
Ω
Ω
T c = 100 oC
10
A
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
C rss
2/6
Parameter
Test Conditions
Forward
Transconductance
V DS > ID( on) x RD S(on) max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 5 A
VG S = 0
Min.
Typ.
3
7
1100
160
30
Max.
Unit
S
1500
250
50
pF
pF
pF
IRF630/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Typ.
Max.
Unit
Turn-on Time
Rise Time
Parameter
V DD = 100 V I D = 5 A
VGS = 10 V
R G = 50 Ω
(see test circuit, figure 3)
Test Conditions
40
80
60
120
ns
ns
Turn-on Current Slope
V DD = 200 V I D = 10 A
R G = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
250
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 200 V
ID = 10 A
Min.
VG S = 10 V
A/µs
40
8
10
60
nC
nC
nC
Typ.
Max.
Unit
50
30
80
80
50
130
ns
ns
ns
Typ.
Max.
Unit
10
40
A
A
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 200 V I D = 10 A
R G = 50 Ω V GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V S D (∗)
Forward On Voltage
I SD = 10 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 10 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
VG S = 0
1.5
V
300
ns
3
µC
20
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
IRF630/FI
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
3.5
3.93
0.137
0.154
3.75
3.85
0.147
0.151
D1
C
D
A
E
L9
DIA.
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
4/6
IRF630/FI
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
Ø
1 2 3
L2
L4
P011G
5/6
IRF630/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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6/6