IRF530
IRF530FI

N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
IRF530
IRF530F I
■
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
100 V
100 V
< 0.16 Ω
< 0.16 Ω
16 A
11 A
TYPICAL RDS(on) = 0.12 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
3
2
1
TO-220
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTER
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
2
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
IRF530
V DS
V DGR
V GS
Drain-source Voltage (V GS = 0)
Unit
IRF530FI
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
G ate-source Voltage
± 20
V
o
ID
Drain Current (continuous) at Tc = 25 C
16
11
A
ID
Drain Current (continuous) at Tc = 100 o C
11
7.8
A
Drain Current (pulsed)
64
64
A
I DM (•)
P tot
o
T otal Dissipation at Tc = 25 C
90
40
W
Derating Factor
0.6
0.27
W/ C
Viso
Insulation W ithstand Voltage (DC)
T s tg
Storage T emperature
Tj
Max. O perating Junct ion T emperature
(•) Pulse width limited by safe operating area
March 1999
-
2000
o
V
-65 to 175
o
C
175
o
C
( 1) ISD ≤16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
IRF530/FI
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
TO-220
T O-220FI
1
3.75
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Parameter
16
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)
100
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
100
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID = 8 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
Max.
Unit
2
3
4
V
0.12
0.16
Ω
16
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 8 A
V GS = 0
Min.
Typ.
5
8
950
150
50
Max.
Unit
S
1300
270
70
pF
pF
pF
IRF530/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 50 V
R G = 4.7 Ω
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD =80 V
Min.
ID = 8 A
V GS = 10 V
I D =16 A V GS = 10 V
Typ.
Max.
Unit
12
20
16
28
ns
ns
32
9
13
44
nC
nC
nC
Typ.
Max.
Unit
11
12
25
15
17
35
ns
ns
ns
Typ.
Max.
Unit
16
64
A
A
1.6
V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
V DD = 80 V I D =16 A
R G = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 16 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD =16 A
V DD = 30 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
o
Tj = 150 C
150
ns
0.8
µC
10
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
IRF530/FI
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
4/6
L4
P011C
IRF530/FI
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
L4
P011G
5/6
IRF530/FI
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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