Physical Sciences Research International
Vol. 1(1), pp. 15-24, February 2013
Full Length Research Paper
Performance of shunt voltage regulators based on
Zener diodes at cryogenic temperatures
W. Abdel Basit1*, S. M. El-Ghanam1, A. M. Abd El–Maksood2 and F. A. S. Soliman2
1
Electronics Research Laboratory, Physics Department, Girl’s College for Art, Science and Education, Ain-Shams
University, Ard-El-Golf, Heliopolis, Cairo, Egypt.
2
Nuclear Materials Authority, P.O. Box 530, Maadi-11728, Cairo, Egypt.
Accepted 5 February, 2013
ABSTRACT
Electronic circuits in certain space missions are exposed to very low temperatures. Very limited data
exist on the performance and reliability of electronic devices and circuits at cryogenic temperatures
below the manufacturer’s specified operating temperature range. This database can be used as a
design tool for screening and identifying diodes with potential use in extreme temperature
applications. Therefore, the present paper summarizes the preliminary results obtained on the
evaluation of shunt voltage regulators based on different breakdowns of Zener diodes whenever they
operate at very low temperature levels. The performance of Zener voltage regulator was evaluated
under a wide temperature range from 300 to 93 K. In this concern, six sets of Zener diodes of the
types BZV86-1V4, BZX83-C3V6, BZX79-C4V7, BZX79-C5V6, BZX83-C6V8 and BZX55C9V1
covering a wide range of low breakdown voltages (from 1.40 to 9.10 V), were chosen. The devices
were evaluated in terms of their output voltages at different input voltage levels (line regulation), and
at constant load current as a function of temperature. The effect of temperature on load regulation was
also established for different load levels up to 21.0 mA, at constant input voltage, over the low
temperature range of 300 to 93 K.
Keywords: Low temperatures, Zener diodes, tunnel effect, avalanche effect, shunt voltage regulators.
*Corresponding author. E-mail: wafaazekri2006@yahoo.com. Tel: 002448083214, 0201226045431.
INTRODUCTION
As space exploration, satellite communications, and other
extraterrestrial activities become increasingly common,
the need for electronics that function at extremely low
temperatures is a must. The operational temperature of
space assets can vary anywhere from a few Kelvin, in the
cold of deep space, all the way up to 100 to 200 K for
satellites in near earth orbit exposed to the extremes of
solar radiation (Ward et al., 2002). While electronics do
exist that operate at these temperatures, their
development is severely limited by inefficient design tools
and prohibitive costs. Two main reasons exist for these
limitations; first, there is a lack of simulation and modeling
capabilities in the low temperature electronics
community. The second reason is due to a perceived
need for exotic technologies such as silicon germanium
based devices (Cressler, 2005; Allnutt, 2007). So, the
present paper will provide a brief background in one type
of semiconductor devices, namely: Zener diode, and
discuss the low temperature phenomena that affect
device performance, as well their applications as shunt
voltage regulators. Avalanche diodes (or Zener diodes)
are widely employed for voltage regulation or parallel
protection against electrostatic discharge or lightening.
Two mechanisms of breakdown are present in this kind of
diode: avalanche breakdown and Zener (tunneling)
breakdown (Nguyen and Paques, 2011).
Voltage regulators based on Zener diodes
Designing of the Zener diode regulator requires the
designer to know the minimum and maximum input
voltages that are to be regulated, and the minimum and
maximum load currents. The Zener diode must handle
Phys Sci Res Int
16
Figure 1. (a) Zener diode as shunt regulator; (b) V-I characteristics of Zener diode.
any current that would normally pass through the load
when it changes and the demand for current decreases.
Figure 1a shows a typical circuit of the Zener diode circuit
design (Akturk et al., 2006). To understand the working of
the circuit, one must revise the V-I characteristics of a
Zener diode (Figure 1b).
Temperature stability factor (ST)
Voltage regulator performance parameters
ST 
The change in the load voltage due to the change in the
temperature is expressed by a factor called the
temperature stability factor ST or the temperature
coefficient of the output voltage, which is given as:
Vo
T constant IL , Vin
(3)
Output resistance (Ro)
The change in the load voltage Vo due to the change in
the load current IL is expressed in terms of a ratio, which
gives the output resistance of a regulator, denoted as Ro:
Ro 
Vo
I L
MATERIALS AND METHODS
(1)
constant Vin , T
where, Vo is the change in load voltage, and IL is the
change in load current.
While defining this parameter, the other two factors Vin
and temperature T are assumed constant. Ideal value of
Ro is zero. Under such condition, the voltage regulator
behaves as a constant voltage source or battery.
Voltage stability factor (Sv)
The change in the load voltage due to the change in input
voltage (line voltage) is expressed in terms of a factor
called line regulation or the voltage stabilization factor Sv,
where:
Sv 
where, Vo and T are the changes in both the load
voltage and temperature, respectively. The ideal value of
ST is zero (Godse and Bakshi, 2009).
Vo
Vin constant I
(2)
L,T
where, Vo and Vin are the changes in the load–and
line–voltages. The ideal value of Sv is zero.
Different breakdown silicon Zener diodes were chosen for studying
their electrical properties whenever they operate at very low
temperature levels, down to cryogenic levels, simulating their
application at outer space environment. In this concern, six different
Zener diode sets covering the breakdown voltage range from 1.40
to 9.10 V were chosen during the course of the study. Performance
characterization was obtained in term reverse voltage-current
characteristics applying curve tracer of the type T ek tr on i x 3 7 0 A
c urv e tr ac er . All measurements were carried out at different
temperature levels within the range from room level (293 K ) down
to cryogenic level (93 K) using the set up shown in Figure 2 (ElGhanam and Basit, 2011). A temperature rate of change of 10°C
/min was used, and a soak time of at least 20 min was allowed at
every test temperature.
The paper was extended to include the applications of the
devices as a shunt regulator (Figure 1a), where the peak input
resistor (R) is 470 Ω and load resistor (RL) is 3.30 kΩ. The voltage
regulator device was evaluated at the test temperatures of 93, 150,
227 and 300 K in a liquid nitrogen cooled environmental chamber.
RESULTS AND DISCUSSION
Low temperature
characteristics
dependence
of
reverse
V-I
As the temperature decreases, there are two physical
Basit et al.
17
to incomplete ionization (Fang and Fowler, 1965; Akturk
et al., 2006). The coefficient is negative for a diode with a
reference voltage below about 5.0 V (Figure 3a and b);
otherwise it is positive, as shown in Figure 3c, d, e and f.
This is related to the dominance of one or the other of the
two phenomena producing similar terminal breakdown
characteristics.
Low temperature
regulator
dependence
Zener
voltage
Line regulation
Figure 2. Cooling system used for controlling the samples low
temperature levels.
phenomena that dominate device operation, increased
mobility and incomplete ionization. High mobility is
generally good for component performance as long as it
can be modeled. Mobility is determined by two main
scattering mechanisms, electron-phonon scattering and
impurity scattering. Electron-phonon scattering is due to
scattering in the silicon lattice, while impurity scattering is
due to ionized impurities. At higher temperatures (near
room temperature), scattering by ionized impurities is
less effective since the faster moving carriers interact
less effectively with stationary impurities. Initially, as
temperature decreases, mobility increases due to a
decrease in the electron-phonon scattering rate (Akturk et
al., 2005; Akturk et al., 2005; Gaensslen et al., 1977;
Szmyrka-Grtebyk and Lipiriski, 1995). Temperature
variations can have a significant effect on the electrical
characteristics of a semiconductor diodes, the matter
which is clearly shown in Figure 3, for the case of the
proposed Zener diodes of types: BZV86-1V4, BZX83C3V6, BZX79-C4V7, BZX79-C5V6, BZX83-C6V8 and
BZX55C9V1. There are two breakdown mechanisms of
diode due to concentration of impurities by increasing the
reverse voltage across it, that is, Zener breakdown and
avalanche multiplication. In this concern, the
experimental reverse (V-I) characteristics of the proposed
six Zener diodes are shown in Figure 3, including
breakdown regions. It is clearly shown, in Figure 3, that
the Zener voltage is a modest function of temperature. An
accurate low temperature model, however, must also
include the effects of impurity concentration as it pertains
Voltage regulation is the process of taking the
unregulated input voltage and producing a constant
output voltage under varying input voltage (Stout et al.,
2008). Line regulation characteristics based on the
proposed different Zener diodes were obtained over the
test temperature levels of 93, 150, 227 and 300 K. The
dependence of the voltage regulator output on its input
voltage at constant load current is depicted in Figure 4,
plotted at the selected test temperatures. From which, it
is clearly shown that, for the reverse bias region (Figure
3), at low input signals (Vin), the Zener diode is in
reverse-bias, but not yet in breakdown region. So, the
Zener diode acts as an open-circuit and has negligible
effect on circuit operation. As a result, the diodes do not
conduct current, as the input voltage is less than the
Zener voltage. In this case, R and RL in circuit of Figure
1a form a resistive voltage divider, making output voltage
(Vout) somewhat smaller than input voltage (Vin), and so
the regulation curve is a line segment (Godse and
Bakshi, 2008).
On the other hand, as the input voltage increases up to
a value more than that of VZ (2.0, 5.0, 5.0, 6.0, 8.0 and
10.0 V) for the proposed Zener diodes, respectively, the
Zener diodes conduct (Figure 4). With a further increase
in Vin, the input current (I) will also increase. This
increases the current through the Zener diode (IZ) without
affecting the load current (IL). The regulated output
voltage of the regulator exhibited negative temperature
coefficient for the Zener diode of types: BZV86-1V4 and
BZX83-C3V6, while for Zener diode of types BZX83C6V8 and BZX55C9V1, its value has positive
temperature coefficient. The test temperatures have had
little effects on the ability of the regulator to maintain
good line regulation for the Zener diodes of types BZX79C4V7 and BZX79-C5V6.
Characterization of line regulation:
Zener regulation voltage and temperature stability
factor (ST):
The dependence of the Zener regulation voltage on
temperature for the proposed diodes was shown in
Phys Sci Res Int
Reverse Voltage, Volt
-2.5
-2.0
-1.5
Reverse voltage, Volt
-1.0
-0.5
0.0
-4.75
-4.50
-4.25
-4.00
-3.75
-3.50
-3.25
-3.00
-2.75
-2.50
0
0
-10
93 K
140 K
168 K
210 K
227 K
245 K
263 K
300 K
Reverse current, mA
93 K
109 K
128 K
150 K
169 K
181 K
192 K
227 K
256 K
300 K
-20
-30
-40
-50
-60
-70
-80
-20
Reverse current, mA
-3.0
18
-40
-60
-80
-100
-90
-120
-100
-110
(a)
-140
(b)
Reverse voltage, Volt
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
Reverse voltage, Volt
-3.0
-2.8
-2.6
-2.4
-2.2
-2.0
-6.0 -5.8 -5.6 -5.4 -5.2 -5.0 -4.8 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -2.2 -2.0
0
93 K
128 K
150 K
169 K
192 K
210 K
227 K
240 K
256 K
300 K
0
93 K
128 K
150 K
169 K
192 K
210 K
227 K
240 K
256 K
300 K
-40
-60
-80
-100
Reverse current, mA
-20
-20
-40
-60
-80
-100
-120
-120
-140
-140
-160
(c)
(d)
Reverse voltage, Volt
-7.4
-7.2
-7.0
-6.8
-6.6
-6.4
Reverse current, mA
-4.8
-6.2
-6.0
-5.8
-5.6
Reverse Voltage, Volt
-5.4
-10.0
-9.5
-9.0
-8.5
-8.0
-7.5
-7.0
0
0
93 K
128 K
150 K
169 K
192 K
210 K
227 K
240 K
256 K
300 K
-20
-40
-60
-80
-100
-120
Reverse current, mA
93 K
128 K
150 K
169 K
192 K
210 K
227 K
240 K
256 K
300 K
-40
-60
-80
-100
-120
-140
-140
-160
-160
(e)
-20
Reverse Current, mA
-5.0
-180
(f)
Figure 3. Reverse (I-V) characteristic curves of the proposed Zener diodes; (a) BZV86-1V4, (b) BZX83-C3V6, (c) BZX79-C4V7, (d) BZX79C5V6, (e) BZX83-C6V8, and (f) BZX55C9V1, plotted at different temperature levels.
Figure 5. On the other hand, the temperature stability
factor (ST) of the devices as a function of the Zener
breakdown voltage was plotted as shown in Figure 6.
From which, it is clearly shown that for Zener diodes
having low breakdown voltages, that is, VZ  5.0 V
(BZV86-1V4, and BZX83-C3V6), the temperature
coefficients are negative. So, their breakdown voltages
were proved to be decreased as a function of
temperature level (Figure 5a). The matter is mainly due to
their high doping levels, and hence, Zener (tunnel) effect
dominates. On the other hand, for Zener diodes with VZ
greater than 6.0 V (BZX83-C6V8 and BZX55C9V1), the
temperature coefficient is positive, as shown in Figure 6,
so VZ increases as temperature increases (Figure 5c),
where such diodes are characterized with their low
doping levels and higher voltages, so the avalanche
effect dominates. Finally, at certain doping level and
breakdown voltages of approximately 5.0 to 6.0 V (for
Zener diodes of the type BZX79-C4V7 and BZX79C5V6), it was noticed that the avalanche effect and the
tunnel effect are both present. Therefore, as the
temperature decreases, the breakdown voltage
decreases due to the avalanche effect and increases due
to the tunnel effect, so that the changes in breakdown
Basit et al.
5.0
4.5
2.5
2.0
VZ
1.5
93 K
150 K
227 K
300 K
1.0
0.5
Output Voltage (Vout ), Volt
Output Voltage (Vout ), Volt
3.0
19
0.0
VZ
4.0
3.5
93 K
150 K
227 K
300 K
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
14
0
2
4
6
Input Voltage (Vin ), Volt
(a)
6
3
2
1
Output Voltage (Vout ), Volt
Output Voltage (Vout ), Volt
93 K
150 K
227 K
300 K
4
0
12
14
5
93 K
150 K
227 K
300 K
4
3
2
1
0
0
2
4
6
8
10
12
14
0
2
4
6
Input Voltage (Vin ), Volt
(c)
8
4
3
2
1
0
Output Voltage (Vout ), Volt
93 K
150 K
227 K
300 K
5
10
12
14
16
VZ
10
6
8
Input Voltage (Vin ), Volt
(d)
11
VZ
7
Output Voltage (Vout ), Volt
10
VZ
VZ
5
8
Input Voltage (Vin ), Volt
(b)
9
8
7
93 K
150 K
227 K
300 K
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Input Voltage (Vin ), Volt
(e)
0
2
4
6
8
10
12
14
16
18
Input Voltage (Vin ), Volt
(f)
Figure 4. Output voltage versus input voltage for different Zener diodes; (a) BZV86-1V4, (b) BZX83-C3V6, (c) BZX79-C4V7, (d) BZX79C5V6, (e) BZX83-C6V8, and (f) BZX55C9V1, plotted at four low temperature levels.
voltage due to different phenomena are cancelled by
each other (Figure 6). As a result, the temperature
coefficient of the breakdown voltage is substantially zero
(Kumano, 1996). So, the value of the Zener regulation
voltage for Zener breakdown voltages of approximately
5.0 to 6.0 V was proved to be slightly affected by lowering
temperature (Figure 5b). The obtained results were
shown to be consistent with those obtained for the effects
of high temperatures on the diodes, where, when Zener
voltage is below 5.0 V, the Zener effect dominates negative
temperature coefficient as shown in Figure 6. On the other
hand, higher Zener voltage diodes produce the effect at a
positive temperature coefficient Vasileva, 2009.
Voltage stability factor (Sv):
The voltage stability factor, which is a measure of
percentage change from pre-determined line regulation
value, was studied, where it is reported that its value
increases from 2.0%, measured at 300 K, up to 5.0%,
measured at 93 K, for shunt voltage regulator based on
the Zener diode of type BZV86-1V4, as shown in Figure
7. While its value was shown to be reduced from the
values of 4.60 and 5.30% down to 3.4%, and 2.20% for
BZX83-C6V8 and BZX55C9V1 Zener diodes, for the
same range of temperatures. The values of voltage
stability factor for the rest of diodes were shown to be
Phys Sci Res Int
4.0
20
5.3
5.2
Regulated Zener voltage, V
Regulated Zener voltage, V
3.5
BZV 86-1V4
at V in =2 V
BZX83-C3V 6 at V in=5 V
3.0
2.5
2.0
5.1
5.0
BZ X79-C4V 7 at V in =5 V
BZ X79-C5V 6 at V in =6 V
4.9
4.8
4.7
4.6
4.5
1.5
4.4
1.0
4.3
90
120
150
180
210
240
270
300
90
120
150
180
210
240
Temperature, K
(b)
Temperature, K
(a)
9.0
Regulated Zener voltage, V
8.5
8.0
BZX83-C6V8
BZX55C9V 1
at V in =8 V
at V in=10 V
7.5
7.0
6.5
6.0
90
120
150
180
210
240
270
300
Temperature, K
(c)
Figure 5. Dependence of Zener regulation voltage on temperature for the proposed diodes.
6
Temperature Stability Factor ST, mV/K
5
V in = 1 5 V
4
3
2
1
0
-1
-2
0
1
2
3
4
5
6
7
8
9
10
Z e n e r v o lt a g e ( V Z ) , V
-3
-4
-5
-6
Figure 6. Temperature stability factor (ST) versus Zener breakdown voltage for the proposed six diodes.
270
300
Basit et al.
21
12
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
120
150
180
210
240
270
BZX83-C3V6
11
BZV86-1V4
Voltage Stability Factor Sv, %
Voltage Stability Factor Sv, %
5.0
10
9
8
7
6
5
4
3
2
1
0
300
90
120
150
180
Temperature, K
(a)
210
240
270
300
Temperature, K
(b)
BZX79-C5V6
5.0
5
Voltage Stability Factor Sv, %
Voltage Stability Factor Sv, %
5.5
6
BZX79-C4V7
4
3
2
1
0
90
120
150
180
210
240
270
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
90
120
150
5.5
5.5
5.0
5.0
4.5
4.0
BZX83-C6V8
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
120
150
180
210
180
210
240
270
300
Temperature, K
(d)
Voltage Stability Factor Sv, %
Voltage Stability Factor Sv, %
Temperature, K
(c)
240
270
300
4.5
BZX55C9V1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
120
150
Temperature, K
(e)
180
210
240
270
300
Temperature, K
(f)
Figure 7. Voltage stability factor (Sv) versus temperature for the proposed Zener diodes.
slightly affected by lowering temperature from 300 to 93
K.
Load regulation
Variations in the output voltage of the proposed Zener
diodes as a function of the load current were plotted at
four temperature levels (300, 227, 150 and 93 K), as
shown in Figure 8. It is clear that the variation of load
resistance (RL) changes the load current (IL) through it,
thereby changing the output voltage. When the load
resistance decreases, the current through it increases.
This ultimately causes a decrease in the Zener current.
As a result, the input current and the voltage drop across
R remain constant, and the output voltage is also kept
constant. On the other hand, as the load resistance
increases, the load current decreases, hence the Zener
current increases. This again keeps the value of input
current and voltage drop across the series resistance
constant. Thus, the output voltage remains constant; this
is called load regulation (Godse and Bakshi, 2009). This
data was recorded with an applied input voltage of 10 V
for Zener diodes of the type BZV86-1V4, BZX83-C3V6,
BZX79-C4V7, BZX79-C5V6 and BZX83-C6V8, and 12 V
for BZX55C9V1 diodes.
Characterization of load regulation:
Output resistance:
The change in the load voltage (VNL-VFL) divided by the
change in load current (IFL) equals the output resistance
Phys Sci Res Int
2.5
5.0
2.0
93 K
150 K
227 K
300 K
1.5
Vin=10 Volt
1.0
0.5
IFL
0.0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
93 K
150 K
227 K
300 K
4.5
Output Voltage (Vout ), Volt
Output Voltage (Vout ), Volt
NL
FL
22
4.0
3.5
Vin=10 Volt
3.0
2.5
2.0
1.5
1.0
IFL
0.5
0.0
0.0
2.5
5.0
Load Current (IL ), mA
(a)
7.5
10.0
12.5
15.0
17.5
20.0
22.5
Load Current (IL ), mA
(b)
5.0
93 K
150 K
227 K
300 K
4.0
3.5
Vin=10 Volt
3.0
2.5
2.0
1.5
1.0
IFL
0.5
0.0
0.0
2.5
5.0
7.5
10.0
12.5
93 K
150 K
227 K
300 K
5
Output Voltage (Vout ), Volt
Output Voltage (Vout ), Volt
4.5
4
Vin=10 Volt
3
2
1
IFL
0
15.0
17.5
20.0
22.5
0.0
2.5
5.0
Load Current (IL ), mA
(c)
7.5
10.0
12.5
15.0
17.5
20.0
22.5
Load Current (IL ), mA
(d)
9
93 K
150 K
227 K
300 K
6
5
Vin=10 Volt
4
3
2
1
93 K
150 K
227 K
300 K
8
Output Voltage (Vout ), Volt
Output Voltage (Vout ), Volt
7
IFL
0
7
6
Vin=12 Volt
5
4
3
IFL
2
1
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
Load Current (IL ), mA
(e)
0
3
6
9
12
15
18
21
24
Load Current (IL ), mA
(f)
Figure 8. Output voltage versus load current, plotted for the proposed six Zener diodes (a) BZV86-1V4, (b) BZX83-C3V6, (c) BZX79-C4V7,
(d) BZX79-C5V6, (e) BZX83-C6V8, and (f) BZX55C9V1.
(Ro) of the regulator (Figure 8), where the output
resistance is related to the slope of this graph. The
maximum load current (IFL) occurs when the load
resistance is minimum (Kachhava, 2003). The trend of
the output voltage versus output current (load current)
was linear in nature with a characteristic slope (output
resistance) ranging between: 18.0 Ω at 300 K, and 33.0
Ω at 93 K for BZV86-1V4, and between 92.0 Ω at 300 K
and 2.30 Ω at 93 K for BZX55C9V1, as an example, as
displayed in Figure 9.
Percentage of load regulation:
The dependence of the load regulation, in percentage,
plotted at different low temperatures levels, was shown in
Basit et al.
23
120
110
100
B Z V 86-1V 4
B Z X83-C 3V 6
B Z X79-C 4V 7
B Z X79-C 5V 6
B Z X83-C 6V 8
B Z X55C 9V 1
Output resistance, 
90
80
70
60
50
40
30
20
10
0
90
120
150
1 80
210
240
2 70
300
T em pe rature, K
Figure 9. Output resistance of a regulator versus temperature for the proposed six Zener diodes.
40
B Z V 8 6 -1 V 4
B Z X 8 3 -C 3 V 6
B Z X 7 9 -C 4 V 7
B Z X 7 9 -C 5 V 6
B Z X 8 3 -C 6 V 8
B Z X55C 9V 1
35
Load regulation, %
30
25
20
15
10
5
0
90
120
150
180
210
240
270
300
T e m p e ra tu r e , K
Figure 10. Load regulation percentage versus temperature for the proposed six Zener diodes.
Figure 10. The load regulation is often expressed as
percentage using the following equation:
% LR 
VNL  VFL
 100
VFL
(4)
From which, it is clear that for the low zener voltage
diodes (BZV86-1V4 and BZX83-C3V6), their intial load
regulation ratios value of 23.0 and 27.0% were shown to
increase up to about 31.0 and 35.0% respecrively, due to
lowering temperature from 300 to 93 K. On the other
hand, for the 4.70 and 5.6 V zener diodes (BZX79-C4V7
Phys Sci Res Int
and BZX79-C5V6B), the dependence of their load
regulation percentage on temperature, was shown to be
approximately negligible, that is its value was shown to
decrease from around 17.5 to 16.7%. Finally, for the rest
diodes (ZX83-C6V8 and BZX55C9V1) the percentage of
load regulation decreases with lowering the temperature
levels, that is, from 17.5 and 9.5%, measured at 300 K
down to 16.7 and 1.20%, measured at 93 K for the two
diodes, respectively.
CONCLUSIONS
The present work is mainly concerned with the design,
applications, and studying of the performance of shunt
voltage regulator circuits based on Zener diodes on low
temperature levels down to 93 K. From the experimental
work and analysis of the obtained results, it can be
concluded that the effect of low temperature on the
reverse I-V characteristic of the investigated diodes,
relationship between regulated output-and input-voltages
of the investigated diode circuits, voltage stability factor
for the investigated diodes, output voltage versus load
current for different investigated load and regulated
output resistance, were studied. The results show that
the investigated parameters of the diodes are direct
functions of the temperature level, for Zener breakdown
voltages ≤ 5.0 V and ≥ 6.0 V. The dependence of the
output of Zener voltage regulator, and the line-and loadregulation characteristics on temperature was traced in
the range from 300 to 93 K. From which, the dependence
of both the line- and load-regulations of the Zener voltage
regulator on temperature within the proposed range was
shown to be function of the used Zener diode breakdown
voltage. That is, for the low voltage Zener diodes
(BZV86-1V4 and BZX83-C3V6), their regulated output
voltages were shown to be increased at 93 K. On the
other hand, for high breakdown Zener diodes (BZX83C6V8 and BZX55C9V), an opposite trend was noticed.
Finally, the devices with intermediate breakdown voltages
(BZX79-C4V7 and BZX79-C5V6) were shown to be very
stable against temperature variations.
24
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