FEATURES
OUTLINE DIMENSIONS (Units in mm)
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
PACKAGE OUTLINE 79A
• LOW THERMAL RESISTANCE:
5 C/W
0.2 – 0.1
IN
0.9 – 0.2
PART NUMBER
SC
O
Functional
Characteristics
Power Out at 1dB Gain Compression
UNITS
MIN
dBm
%
50
Drain Current
A
1.0
Saturated Drain Current
A
4.5
VP
Pinch-Off Voltage
V
RTH
Thermal Resistance
DI
BVGD
Gate-to-Drain Breakdown Voltage
9.0
-3.6
°C/W
V
MAX
1.2 MAX
TEST CONDITIONS
35.0
Power Added Efficiency
IDSS
1.0 MAX
79A
TYP
dB
ID
BOTTOM VIEW
NE6500379A
Linear Gain1
ηADD
0.8 MAX
3.6 – 0.2
= 25°C)
PACKAGE OUTLINE
CHARACTERISTICS
Drain
Note: Unless otherwise specified, tolerance is ±0.2 mm
NT
ELECTRICAL CHARACTERISTICS (TC
GL
4.4 MAX
0.4 – 0.15
NEC's NE6500379A is a 3 W GaAs MESFET designed for
medium power Fixed Wireless Access, ISM, WLL, PCS, IMT2000, and return path MMDS transmitter applications. It is
capable of delivering 3 Watts of output power with high linear
gain, high efficiency and excellent linearity. Reliability and
performance uniformity are assured by NEC's stringent quality and control procedures
Source
Gate
5.7 MAX
DESCRIPTION
Electrical DC
Characteristics
Drain
0.8 – 0.15
X
9
5.7 MAX
0.6 – 0.15
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
E
Gate
T
UE
Source
• HIGH OUTPUT POWER:
35 dBm TYP
P1dB
1.5 – 0.2
4.2 MAX
• USABLE TO 2.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
SYMBOLS
D
NEC'S 3W, L/S-BAND
NE6500379A
MEDIUM POWER GaAs MESFET
17
f = 1.9 GHz, VDS = 6.0 V
Rg = 30 Ω
IDSQ = 500 mA (RF OFF)2
10.0
VDS = 2.5 V; VGS = 0 V
-2.6
-1.6
VDS = 2.5 V; IDS = 21 mA
5
6
Channel to Case
IGD = 21 mA
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories
NE6500379A
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
SYMBOLS
PARAMETERS
UNITS
RATINGS
PARAMETERS
UNITS
TYP
V
6.0
MAX
VDS
Drain to Source Voltage
V
15
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
V
-7.0
TCH
Channel Temperature
°C
125
IDS
Drain Current
A
5.6
GCOMP
Gain Compression
dB
3.0
IGS
Gate Current
mA
50
PT
Total Power Dissipation
W
21
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
D
ORDERING INFORMATION
PART NUMBER
QTY
UE
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE6500379A-T1
1 K/Reel
NE6500379A
(TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DRAIN CURRENT vs.
DRAIN VOLTAGE
5
VGS =
NT
22 W
15
Drain Current, ID (A)
4
20
RTH = 6 °C/W
10
5
0V
3
-0.50 V
2
-1.0 V
-1.5 V
1
SC
O
0
18 °C
0
50
100
-2.0 V
0
0
150
1
2
3
5
4
Case Temperature, TC (°C)
Drain Voltage, VD (V)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
2.00
1.00
0.6
1.00
0.4
0.5
0.00
-3.50
0.2
0.00
-1.50
Gate Voltage, VG (V)
Drain Current, ID (A)
DI
0.8
6
25.0
Maximum Available Gain, GMAG (dB)
Total Power Dissipation, PD (W)
25
Transconductance, GM (mS)
Bulk, 50 piece min.
IN
TYPICAL PERFORMANCE CURVES
6.0
20.0
3V
300 mA
8V
500 mA
15.0
6V
500 mA
10.0
5.0
0.1
0.2
0.4
0.6
1.0
Frequency, f (GHz)
2.0
4.0
NE6500379A
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50
90˚
S11
4.0 GHz
S22
4.0 GHz
-j10
25
150˚
50
100
180˚
0
-j100
-j25
NE6500379A
VD = 6.0 V, ID = 500 mA
S21
MAG
2.139
1.783
1.531
1.343
1.192
1.072
0.975
0.895
0.825
0.765
0.716
0.672
0.632
0.596
0.566
0.540
0.513
0.488
0.468
0.450
0.432
0.413
0.397
0.385
0.372
0.359
0.346
0.336
0.327
0.316
0.308
0.301
0.292
0.282
0.273
0.266
ANG
85.82
82.99
80.36
78.11
75.93
73.74
71.58
69.70
67.81
65.81
63.89
62.25
60.58
58.64
56.79
55.24
53.75
51.90
50.11
48.58
47.36
45.84
44.14
42.59
41.43
40.09
38.46
37.25
35.97
34.75
33.35
32.01
30.79
29.50
27.94
27.01
SC
O
ANG
-174.30
-177.11
-179.62
178.38
176.58
174.96
173.44
172.10
170.80
169.61
168.44
167.32
166.26
165.26
164.32
163.43
162.52
161.56
160.76
160.00
159.26
158.55
157.78
157.08
156.48
155.74
155.08
154.43
153.91
153.33
152.84
152.20
151.72
151.28
150.86
150.75
S12
-60˚
MAG
0.014
0.014
0.014
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.016
0.016
0.015
0.015
0.015
0.015
0.016
0.016
0.015
0.016
0.016
0.017
0.018
0.018
0.018
0.019
0.019
S22
ANG
10.23
9.64
10.32
10.26
10.85
11.62
11.65
12.25
12.72
12.90
13.20
13.85
14.68
14.92
15.56
15.70
17.08
16.80
17.63
18.37
19.74
19.89
20.56
21.83
23.56
24.26
25.44
27.74
29.52
31.71
33.06
32.99
32.12
33.04
31.76
32.12
MAG
0.880
0.881
0.881
0.882
0.881
0.880
0.881
0.881
0.880
0.879
0.881
0.881
0.880
0.877
0.880
0.882
0.880
0.876
0.876
0.881
0.881
0.878
0.877
0.882
0.883
0.881
0.879
0.885
0.885
0.882
0.882
0.884
0.883
0.880
0.877
0.886
IN
S11
MAG
0.966
0.967
0.965
0.965
0.965
0.965
0.965
0.965
0.965
0.965
0.965
0.966
0.966
0.966
0.966
0.967
0.968
0.967
0.968
0.968
0.969
0.969
0.970
0.970
0.970
0.971
0.970
0.972
0.971
0.971
0.973
0.974
0.973
0.974
0.973
0.974
-30˚
-120˚
NT
FREQUENCY
-150˚
0˚
-90˚
-j50
GHz
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
S12
4.0 GHz
S21
4.0 GHz
S11
0.5 GHz
S22
0.5 GHz
Coordinates in Ohms
Frequency in GHz
VD = 3.0 V, ID = 300 mA
30˚
D
10
0
60˚
S12
0.5 GHz
S21
0.5 GHz
UE
j10
120˚
j100
j25
ANG
176.31
175.27
174.08
173.23
172.33
171.34
170.32
169.56
168.73
167.80
166.90
166.23
165.51
164.64
163.73
163.14
162.60
161.72
160.81
160.18
159.90
159.26
158.32
157.46
157.13
156.56
155.69
154.96
154.33
153.69
152.89
152.34
151.99
151.43
150.64
150.34
K
MAG1
0.32
0.36
0.45
0.50
0.56
0.64
0.69
0.73
0.80
0.84
0.86
0.92
1.00
1.06
1.08
1.08
1.13
1.22
1.27
1.26
1.29
1.34
1.42
1.41
1.44
1.47
1.57
1.54
1.61
1.68
1.56
1.48
1.54
1.54
1.61
1.52
(dB)
21.74
20.93
20.24
19.66
19.12
18.65
18.17
17.77
17.41
17.04
16.75
16.46
16.22
14.46
13.97
13.70
13.00
12.19
11.72
11.55
11.19
10.76
10.32
10.16
9.88
9.56
9.04
9.03
8.55
8.13
8.21
8.14
7.76
7.53
7.12
7.23
DI
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K –
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE6500379A
NONLINEAR MODEL
Q1
RDX
0.2 ohms
LGX
LG
0.001 nH
0.68 nH
LD
0.55 nH
LDX
0.015 nH
RDBX
480 ohms
GATE
CBSX
100 pF
CGS PKG
0.1 pF
CDS PKG
0.1 pF
FET NONLINEAR MODEL PARAMETERS
(1)
UE
RSX
0.2 ohms
DRAIN
D
SCHEMATIC
LSX
0.001 nH
Q1
Parameters
Q1
VTO
-2.585
RG
0.2
VTOSC
0
RD
0.001
ALPHA
3
RS
0.001
BETA
1.28
RGMET
0
GAMMA
0
KF
0
GAMMADC(2)
0.035
AF
1
Q
1.7
TNOM
27
DELTA
0.02
XTI
3
1.43
0.6
EG
IS
1e-14
VTOTC
0
N
1
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
10e-12
CDS
0.5e-12
RDB
0.001
SC
O
CBS
0
(3)
CGSO
25e-12
CGDO(4)
4.5e-12
DELTA1
1
DELTA2
0.2
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
GAMMA
(3) CGSO
CGS
(4) CGDO
CGD
DI
UNITS
Parameter
capacitance
Units
picofarads
inductance
nanohenries
resistance
ohms
NT
VBI
IN
SOURCE
Parameters
MODEL RANGE
Frequency: 0.4 to 8 GHz
Bias:
VDS = 3 V to 8 V, ID = 300 mA to 500 mA
Date:
8/03
NE6500379A
APPLICATION CIRCUIT (1.93 - 1.99 GHz)
VD
VG
J3
J4
C2
C8
C10
D
C3
C9
C11
P1
GND
RFOUT
J2
C5
R2R1
C6
7 X
J1
T C
RFIN
UE
C12
C13
C4
IN
U1
100637
C1
NE6500379A-EV
Contact CEL Engineering for artwork
and more detailed information.
J3
VG
C13
C11
NT
.034
C9
C3
SC
O
L = .890
W = .010
J1
RF Input
J4
VD
C2
C14
C12
L = .874
W = .010
L = .200
W = .050
C5
J2
C4 L = .140
W = .050
TF-100637
DI
C2, C3
R1
C1, C14
C4
C5
C6
C7
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
TEST CIRCUIT BLK
2-56 X 3/16 PHILLIPS PAN HEAD
CASE 1100 pF CAP MURATA
0603 20 OHMS RESISTOR ROHM
CASE A 47 pF CAP ATC
CASE A 4.3 pF CAP ATC
CASE A 5.6 pF CAP ATC
CASE A 0.5 pF CAP ATC
CASE A 0.8 pF CAP ATC
CASE B 4.7 uF CAP AVX
0805 .1 uF CAP MURATA
0805 1000 pF CAP MURATA
IC NEC
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
RF Output
C1
C7
Er = 4.2
H = .028"
NE6500379A PARTS LIST
MA101J
MCR03J200
100A470CP150X
100A4R3CP150X
100A5R6CP150X
100A0R5CP150X
100A0R8CP150X
TAJB475K010R
GRM40X7R104K025BL
GRM40C0G102J050BD
NE6500379A
703401
1250-003
2052-5636-02
C10
R6
NE650379A
C6
1
4
2
1
2
1
1
1
1
2
2
2
1
1
1
2
C8
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
NE6500379A
P.C.B. LAYOUT (Units in mm)
FOR 79A PACKAGE
4.0
Source
Through hole φ 0.2 × 33
0.5
0.5
IN
6.1
UE
0.5
1.0
Gate
1.2
5.9
Drain
D
1.7
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V
GAIN AND PAE vs.
OUTPUT POWER
60
FC = 1.96 GHz, VDS = 3 V
12
50
6
20
40
8
30
6
PAE (%)
30
PAE (%)
8
Gain, GA (dB)
10
40
20
4
Gain, IDSQ = 200 mA
Gain, IDSQ = 600 mA
PAE, IDSQ = 200 mA
PAE, IDSQ = 600 mA
2
0
20
22
24
26
28
30
32
10
2
0
0
20
34
22
24
26
28
30
32
34
Output Power, POUT (dBm)
GAIN AND SATURATION POWER
vs. FREQUENCY
GAIN AND SATURATION POWER
vs. FREQUENCY
16
31.50
DI
30.50
12
29.50
10
28.50
1.92
1.94
1.96
Gain, IDSQ = 100 mA
Gain, IDSQ = 800 mA
POUT, IDSQ = 100 mA
POUT, IDSQ = 800 mA
1.98
Frequency, f (GHz)
2.00
27.50
2.02
0
37
POUT = 17 dBm for Gain, 30 dBm for PSAT, VDS = 6 V
Gain, GA (dB)
14
Saturation Power, PSAT (dBm)
POUT = 10 dBm for Gain, 23 dBm for PSAT, VDS = 3 V
10
36
Output Power, POUT (dBm)
16
8
1.90
Gain, IDSQ = 200 mA
Gain, IDSQ = 600 mA
PAE, IDSQ = 200 mA
PAE, IDSQ = 600 mA
14
36
12
35
10
8
1.90
34
Gain, IDSQ = 100 mA
Gain, IDSQ = 800 mA
POUT, IDSQ = 100 mA
POUT, IDSQ = 800 mA
1.92
1.94
1.96
1.98
Frequency, f (GHz)
2.00
33
2.02
Saturation Power, PSAT (dBm)
SC
O
4
Gain, GA (dB)
60
FC = 1.96 GHz, VDS = 6 V
12
50
10
Gain, GA (dB)
14
NT
14
GAIN AND PAE vs.
OUTPUT POWER
NE6500379A
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V
-25
-30
-35
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-45
23
24
25
26
27
28
29
30
31
32
Total Output Power, POUT (dBm)
-30
-35
-40
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-45
-50
33
23
25
27
29
31
33
ACPR vs. OUTPUT POWER
-35
FC = 1.96 GHz, VDS = 6 V
64 CH IS95 CDMA
NT
ACPR1
885KHz
ACPR1
885KHz
-40
-40
-45
SC
O
-45
ACPR (dBc)
-25
Total Output Power, POUT (dBm)
ACPR vs. OUTPUT POWER
-35
-50
ACPR2
885KHz
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-60
FC = 1.96 GHz, VDS
64 CH IS95 CDMA
23
24
25
26
= 3V
27
28
29
30
32
ACPR2
125MHz
IDSQ = 100 mA
IDSQ = 200 mA
IDSQ = 400 mA
IDSQ = 600 mA
IDSQ = 800 mA
-60
-65
33
23
25
27
29
31
33
35
Total Output Power, POUT (dBm)
DI
Total Output Power, POUT (dBm)
31
-50
-55
-55
-65
FC = 1.96 GHz, VDS = 6 V
IN
-40
-20
D
-20
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
UE
FC = 1.96 GHz, VDS = 3 V
ACPR (dBc)
Third Order Intermodulation Distortion, IM3 (dBc)
-15
Third Order Intermodulation Distortion, IM3 (dBc)
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/04/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.