The 450 mm Transition
An Equipment Supplier’s Perspective
Neil Hanson
450mm Product Management and Marketing
Lam Research Corporation
September 13, 2011
Agenda
(v7)

Lam Research Overview

450mm - timing questions and implications

450mm – etch scaling

Summary and further questions
Slide - 2
Lam Research Corporation – Sematech Symposium Taiwan 2011
Lam Research at a Glance

Major supplier of wafer fab equipment and services
– Headquartered in Fremont, California, with
facilities in Asia, Europe, and North America
– ~3,650 Employees worldwide
– Revenue of $3.24B in the last four quarters

Etch and Clean product lines offer leading
technologies for performance and extendibility
– Conductor, dielectric, MEMS, deep silicon,
and through-silicon via (TSV) etch
– Wet and plasma-based single-wafer clean

(v7)
Customer Support Business Group (CSBG)
dedicated to optimizing installed equipment
performance and operational efficiency
Slide - 3
Lam Research Corporation – Sematech Symposium Taiwan 2011
Lam Research Global Support – Close to Our Customers
Northwest
Idaho, Washington
Germany
Northeast
Dresden
New York
Switzerland
France
Corp. Headquarters
Arizona, Texas
Beijing, Shanghai,
Wuhan, Wuxi
Schiphol-Rijk
Dublin
Central
China
The Netherlands
Ireland
Corbeil Essonnes,
Meylan, Rousset
Neuchatel
Italy
Agrate
Japan
Hiroshima, Kumamoto,
Shin-Yokohama, Toyama,
Yokkaichi
Austria
Villach
Israel
Korea:
Ramat Gan
Malaysia
Fremont, CA
Livermore, CA
Bundang, Cheongju,
Hwaseong, Icheon
Taiwan
Singapore
(v7)
Slide - 4
Lam Research Corporation – Sematech Symposium Taiwan 2011
Gueishan, Houli,
Hsinchu, Tainan
Lam Research Product & Technology Milestones
1981
1987
1988
First product,
AutoEtch
Rainbow®
Etch Series
SEZ® spin technology
for single-wafer clean
1992
1993
Alliance®
cluster tool
platform
for etch
Slide - 5
2000
2003
2004
2006
2007
2008
DV-Prime® next-generation
spin clean system
2300® platform
offering first
200 mm/300 mm
capability
2300® Coronus® plasma
bevel clean system
Da Vinci®
spin clean platform
First product with
Dual Frequency Confined™
technology for dielectric etch
First Transformer Coupled Plasma™
based products for silicon and metal etch
(v7)
1995
2300®
Syndion®
system,
first 300 mm TSV etch
C3® linear
wet clean
technology
2300® Exelan® Flex™ &
2300® Versys® Kiyo® products
for dielectric & conductor etch
Lam Research Corporation – Sematech Symposium Taiwan 2011
2009
2010
Shipped 7,500th
etch process
module for the
2300® platform
Shipped 3,000th
single-wafer
spin clean
process module
2300® Kiyo® C Series
next-generation
conductor etch system
2300® Flex™ D Series
next-generation
dielectric etch system
Lam Research Ranking – Wafer Fab Equipment Revenues
Rank
2006
2007
2008
2009
2010
1
Applied Materials
Applied Materials
Applied Materials
Applied Materials
Applied Materials
2
Tokyo Electron
Tokyo Electron
ASML
ASML
ASML
3
ASML
ASML
Tokyo Electron
Tokyo Electron
Tokyo Electron
4
KLA-Tencor
KLA-Tencor
KLA-Tencor
KLA-Tencor
Lam Research
5
Lam Research
Lam Research
Lam Research*
Lam Research
KLA-Tencor
6
Nikon
Nikon
Nikon
Nikon
Dainippon Screen
7
Novellus Systems
Novellus Systems
Dainippon Screen
Dainippon Screen
Nikon
8
Dainippon Screen
Dainippon Screen
Hitachi High-Tech
Novellus Systems
Novellus Systems
9
Canon
Hitachi High-Tech
Novellus Systems
Aixtron
Aixtron
10
Hitachi High-Tech
Varian
Canon
Hitachi High-Tech
Varian
* Includes SEZ AG, acquired 2008
Source: Gartner Dataquest
(v7)
Slide - 6
Lam Research Corporation – Sematech Symposium Taiwan 2011
The Timing Question
 As “traditional” scaling becomes more difficult and costly,
a wafer size transition becomes inevitable
 For 450 mm, the transition has started
 The big questions are:
“How much will the transition cost?”
“How quickly can and will the transition occur?”
(v7)
Slide - 7
Lam Research Corporation – Sematech Symposium Taiwan 2011
The Cost Implications of Timing – Equipment Development
Equipment Supplier Preference
Investment $
(Arbitrary Scale)
100
10
1
Initial Pilot (α)
Basic Capability
Full Pilot (β) Initial Production (ϒ)
in Quantity
Full Capability
Time
(v7)
Slide - 8
Lam Research Corporation – Sematech Symposium Taiwan 2011
The Cost Implications of Timing – Equipment Development
Semiconductor Manufacturer Preference
Investment $
(Arbitrary Scale)
100
10
1
Initial Pilot (α)
Basic Capability
Full Pilot (β) Initial Production (ϒ)
in Quantity
Full Capability
Time
(v7)
Slide - 9
Lam Research Corporation – Sematech Symposium Taiwan 2011
The Cost Implications of Timing – the Investment Disconnect
Investment $
(Arbitrary Scale)
100
10
1
Initial Pilot (α)
Basic Capability
Full Pilot (β) Initial Production (ϒ)
in Quantity
Full Capability
Time
(v7)
Slide - 10
Lam Research Corporation – Sematech Symposium Taiwan 2011
The Cost Implications of Timing – Timing Pushout
Investment $
(Arbitrary Scale)
100
10
1
Initial Pilot (α)
Basic Capability
Full Pilot (β)
Full Capability
Time
(v7)
Slide - 11
Lam Research Corporation – Sematech Symposium Taiwan 2011
Initial Production (ϒ)
in Quantity
The Cost Implications of Timing – Timing Pushout
Investment $
(Arbitrary Scale)
100
Cost Savings
10
Additional Cost
1
Initial Pilot (α)
Basic Capability
Full Pilot (β)
Full Capability
Time
(v7)
Slide - 12
Lam Research Corporation – Sematech Symposium Taiwan 2011
Initial Production (ϒ)
in Quantity
The Cost Implications of Timing – Mitigating The Disconnect
Investment $
(Arbitrary Scale)
100
10
Reduced Disconnect
1
Initial Pilot (α)
Virtual Fab (α)
Basic Capability Basic Capability
Full Pilot (β) Initial Production (ϒ)
in Quantity
Full Capability
Time
(v7)
Slide - 13
Lam Research Corporation – Sematech Symposium Taiwan 2011
The Cost Implications of Timing – Mitigating The Disconnect
100
Milestone
pushed out
Investment $
(Arbitrary Scale)
Close partnership can
reduce these
disconnects and
timing uncertainties
Milestone
pushed out
10
Reduced Disconnect
1
Initial Pilot (α)
Virtual Fab (α)
Basic Capability Basic Capability
Full Pilot (β) Initial Production (ϒ)
in Quantity
Full Capability
Time
(v7)
Slide - 14
Lam Research Corporation – Sematech Symposium Taiwan 2011
Cost Benefits of a Wafer Size Transition
Lessons Learned from 200 mm to 300 mm Transition


The industry realized additional productivity benefits beyond ~2X greater die/wafer
when transitioning from 200 mm to 300 mm (e.g., reliability, automation, utilization,
WPH, speed to delivery, ramp and yield…)
450 mm has potentially less performance upside in the non-wafer size related areas
Uptime & Availability (%)
– Reaching an asymptote for many parameters: uptime, availability, yield, …
– Less room for improvement
100
90
80
70
200 mm
300 mm
Wafer Size
(v7)
Slide - 15
Lam Research Corporation – Sematech Symposium Taiwan 2011
450 mm
Potential Equipment Scaling Issues – Example

Scaling of plasma tools (etch, CVD, PVD, plasma implant, …) is “straightforward”,
but there are cost implications
– Plasma and gas densities scale with chamber volume not wafer radius
– Plasma flux scales with the wafer area
– At best, it will be an x2 increase with a simple scale-up – at worst an x3 increase
• Applies to power generators and vacuum pumps
Plasma Density
Loss of Plasma density
Scale only wafer area
Scale chamber volume
300 mm Chamber Baseline
(v7)
Slide - 16
450 mm Chamber Baseline
Increasing Chamber Volume 
Lam Research Corporation – Sematech Symposium Taiwan 2011
Equipment Scaling Issues – RF Power and Pumping
Not only do the amount of RF power and pumping required for 450 mm increase non-linearly,
but the incremental cost for that additional capability also increases non-linearly
 RF generator $/W increases non-linearly with higher power
 Turbo pump $/cfm show similar behavior with higher flows
 These costs will likely come down over time
Cost / RF Watt

RF generator cost
delta for 450 mm
Total Power Required
(v7)
Slide - 17
300 mm
Lam Research Corporation – Sematech Symposium Taiwan 2011
450 mm
Summary
 As a leading equipment supplier, we will have 450 mm equipment sets ready
when our customers need them
 A close partnership between customers and suppliers is needed to
continually understand requirements and timing to allow for appropriate
investment levels
 Many additional questions will need to be answered during the equipment
development phase:
What will the 450 mm adoption rate be for Logic, Foundry, and Memory?
Will there be a need for leading-edge equipment at both 450 mm and 300 mm
simultaneously?
Will EUV come before or after 450 mm?
How will the economics (tool cost, yield and productivity improvements,
automation benefits, …) of this transition compare to previous transitions?
(v7)
Slide - 18
Lam Research Corporation – Sematech Symposium Taiwan 2011