new components call for a hardware comparison of receiver

ALSO PUBLISHED ONLINE:
FEBRUARY2012
www.highfrequencyelectronics.com
New Components Call for
a Hardware Comparison of
Receiver Architectures
INSIDE THIS ISSUE:
Non-Resonant Slotted Waveguide
Antenna Design Method
Power Amps
Resistive Products
Oscillators
Synthesizers
· Lightwave
Ideas for today’s engineers: Analog · Digital · RF · Microwave · mm-wave
February
2012
1
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Electrical Specifications (1 Meter of Fiber)
Noise Input Power Spurious Free
Phase Group
Available Wavelengths
Gain Figure @ P1dB Dynamic Range Noise Delay VSWR Standard
Optional
Series
Frequency
(dB) (dB) (dBm, Min.) (dB/Hz, Typ.) (dBc, Typ.) (ns) (In/Out)
(nm)
Wavelengths
Transmitters and Receivers
SLL
5 kHz - 2.5 GHz
12
18
-14
103
>100
0.2
2:1
1550/1310
18 CWDM Ch
100 MHz - 2.5 GHz
12
18
-14
103
>100
0.2
2:1
1550/1310
18 CWDM Ch
LBL
50 KHz - 3 GHz
15
11
-14
106
>100
0.2
2:1
1550/1310 18 CWDM Ch, 45 DWDM Ch
50 KHz - 4.5 GHz
15
11
-14
106
>100
0.2
2:1
1550/1310 18 CWDM Ch, 45 DWDM Ch
10 MHz - 3 GHz
15
11
-14
106
>100
0.2
2:1
1550/1310 18 CWDM Ch, 45 DWDM Ch
10 MHz - 4.5 GHz
15
11
-14
106
>100
0.2
2:1
1550/1310 18 CWDM Ch, 45 DWDM Ch
LBL-HD
950 MHz - 2.5 GHz
0
22
7
114
>100
0.2
2:1
1550/1310
18 CWDM Ch
SCML
50 kHz - 6 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
100 MHz - 6 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
100 MHz -11 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
100 MHz -13 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
100 MHz -15 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
100 MHz - 18 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
10 MHz - 18 GHz
15
15
-14
103
>100
0.2
2:1
1550
1310/1490 nm
High Gain Broadband Receivers
DR-125G-A
30 KHz -12.5 GHz35 O/E (or TIG = 2800 ohms)
2:1
1280-1580
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1280-1580
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ALSO PUBLISHED ONLINE AT: www.highfrequencyelectronics.com
24
Receiver Architecture
New Components Call
for a Hardware
Comparison of
Receiver Architectures
By Todd Nelson, Linear
Technology Corp.
32
Antenna Design
Non-Resonant Slotted
Waveguide Antenna
Design Method
February2012
Vol. 11 No. 2
48
New Products
By Michal Grabowski,
Cobham Antenna
Systems
Hittite launches two new
SMT packaged clock
generators.
16
12
6
Featured Products
In The News
Editorial
FEBRUARY2012
ALSO PUBLISHED ONLINE:
www.highfrequencyelectronics.com
NEW COMPONENTS CALL FOR
HARDWARE COMPARISON OF
RECEIVER ARCHITECTURES
A
INSIDE THIS ISSUE:
EM Research introduces
a 39.5 GHz frequency
synthesizer.
News on Teledyne
Technologies, TriQuint
Semiconductor, Emerson
& Cuming, the Mars
Science Laboratory, and
more.
Non-Resonant Slotted Waveguide
Antenna Design Method
ICs
Power Amps
Resistive Products
Oscillators
Synthesizers
Ideas for today’s engineers: Analog · Digital · RF · Microwave · mm-wave
· Lightwave
February
2012
1
Commentary by HFE
Publisher Scott
Spencer.
6 Editorial
12 In the News
47 Design Notes
8 Meetings & Events
48 New Products
64 Advertiser Index
February 2012
5
EDITORIAL
Vol. 11 No. 2, February 2012
Publisher
Scott Spencer
scott@highfrequencyelectronics.com
Tel: 603-472-8261
Fax: 603-471-0716
Associate Publisher/Managing Editor
Tim Burkhard
tim@highfrequencyelectronics.com
Tel: 707-544-9977
Fax: 707-544-9375
Senior Technical Editor
Tom Perkins
tom@highfrequencyelectronics.com
Tel: 603-472-8261
Fax: 603-471-0716
Vice President, Sales
Gary Rhodes
grhodes@highfrequencyelectronics.com
Tel: 631-274-9530
Fax: 631-667-2871
Business Office
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Send subscription inquiries and address changes
to the above contact person. You may send them
by mail to the Business Office address above.
Our Environmental Commitment
High Frequency Electronics is printed
on paper produced using sustainable forestry practices, certified by
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www.pefc.org
Copyright © 2012, Summit Technical Media, LLC
6
High Frequency Electronics
Consumer Electronics,
the F-35, and a Record
Setting Transmitter
Scott L. Spencer
Publisher
T
he 2012 International Consumer Electronics Show
(CES) was held last month in Las Vegas. Estimates
are that a mind-boggling 20,000 new products
were introduced over the three day event.
Ubiquitous among the products introduced is the
incorporation of MEMS inertial sensors in almost every
new mobile device. Once impractical for small form factor
applications, these devices not only determine the orientation of a mobile
device but also can be used to determine the device’s location in three
dimensional space.
Home Health Hubs are poised to become commonplace. These systems
will integrate Bluetooth, Wi-Fi, USB, and ZigBee technologies to a router
that is capable of sending information like glucose levels, blood pressure,
body temperature, heart rate, and blood-oxygen levels to a web-based platform or mobile device. This enables users to collect, store, and share their
health information. Diagnostic software on a mobile device can even trigger
a personal emergency response system (PERS) in the event of a life-threating situation.
F-35 Cuts Likely?
Last month I reported on a statement made by the Secretary of Defense
where he indicated that cutting $1 trillion from the defense budget over the
next ten years would essentially gut many major programs including the
F-35 Joint Strike Fighter. Last week’s news from Washington signaled that
the Pentagon is indeed planning to curtail production of some F-35 variants
in an effort to reduce the overall defense budget. Many companies in the RF
and microwave field have investments in this vital program and have major
revenue projections in their sales forecasts tied to the F-35.
Lockheed Martin alone estimates that the F-35 program will provide
more than 260,000 jobs when the aircraft reaches full-scale production.
Already the company contracts with more than 1,300 small businesses and
manufacturers around the country, producing more than 127,000 jobs in 47
states. Because of this broad geographic distribution there is formidable
pressure on Members of Congress, particularly the F-35 Caucus, to keep the
program fully funded.
Initially the United States planned to build 2,443 F-35s at a cost of $325
billion. Current cost estimates have increased to over $380 billion. In light
of this the Pentagon has proposed spending about $9.2 billion to buy 29 F-35
jets in its fiscal 2013 budget, 13 fewer than previously planned. The
Pentagon’s previous plan to purchase 62 F-35s in fiscal 2014 is
being reduced to 29 and the request
for 2015 is dropping to 44 from 81.
The planned purchase for 2016 will
drop from 108 to 61. The reduction
is part of a decision to delay purchasing 179 of the Joint Strike
Fighters beyond 2017 and could
spell trouble for the program in the
long term.
Most people who have been
involved with the manufacturing
process will agree that pushing production into the future is a recipe for
higher overall lifecycle costs and
project overruns which have already
plagued the F-35 in the ten or more
years since the project was awarded.
T-rays
High Frequency Electronics
Senior Technical Editor Tom Perkins
stopped by my office a while ago
with a copy of IEEE Transactions on
Terahertz Science and Technology, a
digest aimed at the frequency range
between 300 GHz and 10 THz.
Increasingly there is a renewed
interest in this area because terahertz radiation penetrates most
materials without the damage normally associated with ionizing radiation. As such there are numerous
applications in medical and dental
diagnostics. In security situations
time-domain spectroscopy, used to
determine the chemical composition
of materials, benefits from T-ray
technology and is useful for identifying the chemical signatures of specific explosives and detection of
weapons and contraband.
I never paid too much attention
to this area of the spectrum which
straddles the region where electromagnetic physics can best be
described by its wave-like characteristics (microwave) and its particlelike characteristics (infrared). There
didn’t seem to be any commercially
available devices (optical or microwave) to make a large scale market
introduction a reality.
This week I saw an article posted on the Technical University at
Darmstadt’s website titled “Tiny
Transmitter Sets Frequency Record.”
Researchers at the University’s
Institute for Microwave Technology
and Photonics say they have developed a resonance tunnel diode
(RTD) for generating terahertz electromagnetic radiation that takes up
less than a square millimeter and
may be produced using quasi-conventional semiconductor device-fabrication technologies. Their transmitter reportedly set a new frequency record of 1.111 THz with output
power of 0.1 microwatts at room
temperature.
HFE
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MEETINGS & EVENTS
Conferences
March 3 – 10, 2012
IEEE Aerospace Conference
Big Sky, Mont.
Information: www.aeroconf.org
March 5 – 7, 1012
IEEE International Workshop on Antenna Technology:
Small Antennas and Unconventional Applications
Tucson, Ariz.
Information: http://www.cccmeetings.com/iwat2012.
pdf
March 12 – 13, 2012
CS Europe
Frankfurt, Germany
Information: http://cseurope.net
April 1 – 4, 2012
IEEE Wireless Communications and Networking
Conference
Paris, France
Information: http://www.ieee-wcnc.org/2012
April 3 – 5, 2012
Microwave & RF
Paris, France
Information: http://www.microwave-rf.com/?lang=EN
April 3 – 5, 2012
Forum Radiocoms
Paris, France
Information: http://www.microwave-rf.com/
April 10 – 14, 2012
28th International Review of Progress in Applied
Computational Electromagnetics
Columbus, Ohio
Information: http://aces.ee.olemiss.edu
April 16 – 17, 2012
Wireless and Microwave Technology Conference
(WAMICON)
Cocoa Beach, Fla.
Information: wamicon.org
May 21 – 23, 2012
International Conference on Microwaves, Radar, and
Wireless Communications
Warsaw, Poland
Information: www.mikon-2012.pl
June 17 – 22, 2012
IMS 2012
Montreal, Canada
Information: http//ims2012.org
8
High Frequency Electronics
July 29 – August 3, 2012
International Conference on Wireless Information
Technology and Systems
Honolulu, Hawaii
Information: http://hcac.hawaii.edu/conferences/
tcwct2012
August 6 – 9, 2012
NIWeek 2012
Austin, Tex.
Information: http://www.niweek/
August 13 – 15, 2012
IEEE International Conference on Signal Processing,
Communications and Computing
Hong Kong
Information: www.icspcc2012.org
September 3 – 4, 2012
Workshop on Integrated Nonlinear Microwave and
Millimetre-Wave Circuits
Dublin, Ireland
Information: www.inmmic.org/
September 10 – 13, 2012
IEEE AUTOTESTCON
Anaheim, Calif.
Information: www.autotestcon.com
September 17 – 20, 2012
IEEE International Conference on Ultra-Wideband
Syracuse, N.Y.
Information: www.ICUWB2012.org
Short Courses
Besser Associates
Tel: 650-949-3300
Fax: 650-949-4400
Email: info@besserassociates.com
http://besserassociates.com
Online resources: bessernet.com
Applied RF Techniques I
February 27 – March 2, 2012, San Diego, Calif.
Understanding DSP
February 27 – 29, 2012, San Diego, Calif.
Frequency Synthesis and Phase-Locked Loop Design
February 27 – 29, 2012, San Diego, Calif.
Applied Design of RF/Wireless Products and Systems
February 27 – 29, 2012, San Diego, Calif.
Wireless LANs
February 27 – 29, 2012, San Diego, Calif.
Digital Predistortion Techniques for RF Power Amplifier
Systems
March 1 – 2, 2012, San Diego, Calif.
GaN Power Amplifier Design
March 12 – 16, 2012, Web Classroom, WebEx
RF and High Speed PC Board Design Fundamentals
March 19 – 21, 2012, San Jose, Calif.
RLC has the customized filter
solutions you need.
RLC manufactures a complete line of RF and
Microwave filters covering nearly every application
in the DC to 50 GHz frequency range. We offer
different filter types, each covering a specific
engineering need.
In addition, our large engineering staff and high
volume production facility give RLC the ability to
develop and deliver both standard and custom
designed filters at competitive costs, within days or
a few weeks of order placement.
■ Band Pass, Low Pass,
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Band Reject
■ Spurious Free, DC to 50 GHz,
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■ Connectorized, Surface Mount,
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■ 4th Order Bessel Filters
■ Custom Designs
For more detailed information, or to access RLC’s exclusive Filter Selection Software, visit our web site.
RLC ELECTRONICS, INC.
83 Radio Circle, Mount Kisco, New York 10549 • Tel: 914.241.1334 • Fax: 914.241.1753
E-mail: sales@rlcelectronics.com • www.rlcelectronics.com
ISO 9001:2000 CERTIFIED
MasterCard
RLC is your complete microwave component source...
Switches, Filters, Power Dividers, Terminations, Attenuators, DC Blocks, Bias Tees & Detectors.
Get info at www.HFeLink.com
MEETINGS & EVENTS
Transceiver and Systems Design for Digital
Communications
March 19 – 21, 2012, San Jose, Calif.
Practical Digital Wireless Signals – Measurements and
Characteristics
March 19 – 23, 2012, San Jose, Calif.
LTE & LTE-Advanced: A Comprehensive Overview
March 19 – 21, 2012, San Jose, Calif.
RF Measurements: Principles & Demonstration
April 23 – 27, 2012, San Jose, Calif.
CMOS RF Design
April 23 – 25, 2012, San Jose, Calif.
Modern Digital Modulation Techniques
May 21 – 25, 2012, Burlington, Mass.
Antennas & Propagation for Wireless Communications
May 21 – 23, 2012, Burlington, Mass.
Radio System Design – Theory and Practice
May 21 – 25, 2012, Burlington, Mass.
Applied Analog/Mixed-Signal Measurements
May 21 – 25, 2012, Burlington, Mass.
Power Conversion & Regulation Circuits for VLSI
Systems
May 22 – 25, 2012, Burlington, Mass.
Wireless/Computer Network Security
May 23 – 25, 2012, Burlington, Mass.
RF Fundamentals
June 25 – 29, 2012, Web Classroom, WebEx
Company-Sponsored
Training & Tools
National Instruments
LabVIEW Core 1
Online
http://sine.ni.com/tacs/app/fp/p/ap/ov/pg/1/
LabVIEW Core 2
Online
http://sine.ni.com/tacs/app/fp/p/ap/ov/pg/1/
Object-Oriented Design and Programming in LabVIEW
Online
http://sine.ni.com/tacs/app/fp/p/ap/ov/pg/1/
Agilent Technologies
Introduction to Agilent VEE Pro
February 14 – 17, 2012, Las Vegas, Nev.
http://www.home.agilent.com/agilent/eventDetail.
jspx?cc=US&lc=eng&ckey=701878-14&nid=34787.0.00&id=701878-14
RF and Microwave Fundamentals
February 14 – 17, 2012, Las Vegas, Nev.
http://www.home.agilent.com/agilent/eventDetail.
jspx?cc=US&lc=eng&ckey=701878-14&nid=34787.0.00&id=701878-14
Advanced Agilent VEE Pro
June 19 – 22, 2012, Las Vegas, Nev.
http://www.home.agilent.com/agilent/eventDetail.
jspx?cc=US&lc=eng&ckey=701878-14&nid=34787.0.00&id=701878-14
10 High Frequency Electronics
AWR
On-site and online training, and open training courses on
design software.
http://web.awrcorp.com/Usa/News--Events/Events/
Training/
Linear Technology
LTSpice IV
LTpowerCAD
LTpowerPlay
Amplifier Simulation & Design
Filter Simulation & Design
Timing Simulation & Design
Data Converter Evaluation Software
http://www.linear.com/designtools/software/
Call
for
Papers
2012 IEEE International Conference on Wireless
Information Technology and Systems (ICWITS)
July 29 – August 3, 2012
Honolulu, Hawaii
Abstract Deadline: April 1, 2012
http://ieee.org/web/callforpapers
2012 Workshop on Integrated Nonlinear Microwave
and Millimetre –Wave Circuits
September 3 – 4, 2012
Dublin, Ireland
Abstract Deadline: May 4, 2012
Final Paper Deadline: August 3, 2012
http://ieee.org/web/callforpapers
2012 IEEE International Conference on Ultra-Wideband
(ICUWB2012)
September 17 – 20, 2012
Syracuse, N.Y.
Abstract Deadline: March 9, 2012
Final Paper Deadline: June 15, 2012
http://ieee.org/web/callforpapers
2012 37th International Conference on Infrared,
Millimeter, and Terahertz Waves
September 23 – 28, 2012
Wollongong, NSW, Australia
Abstract Deadline: April 20, 2012
Final Paper Deadline: July 6, 2012
http://ieee.org/web/callforpapers
2012 IEEE 21st Conference on Electrical Performance
of Electronic Packaging and Systems
October 21 – 24, 2012
Tempe, Ariz.
Abstract Deadline: July 1, 2012
Final Paper Deadline: July 8, 2012
http://ieee.org/web/callforpapers
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IN THE NEWS
Business News
Teledyne Technologies Incorporated announced
the consolidation of its microwave businesses into a
single organization: Teledyne Microwave Solutions.
This move supports Teledyne’s strategic direction as a
customer focused, innovative and diversified technology company. This step is a continuation of Teledyne’s
strategy to build on organic and acquired businesses
that serve differentiated, technology oriented markets.
The goal of this consolidation is to integrate sales and
marketing to present a unified solution to our customers while expanding our R&D organization to promote
scientific innovation and customer collaboration. “This
consolidation is an important step towards realizing
our goal of providing custom microwave solutions ranging from individual components through sub-systems,”
said Russell Shaller, Vice President of Teledyne
Microwave Solutions. “These changes are crucial to
drive future growth and realize the promise of being a
global microwave technology leader. With our research
capabilities at Teledyne Scientific, we have the ability to create unique and innovative products utilizing
LDMOS, GaAs, GaN, and InP combined with advance
packaging and embedded control electronics. Moreover,
this integration enables us to provide local customer
support spanning six continents.”
Anaren, Inc. announced that it has formed a strategic
alliance with Tesla Controls to develop and market
a unique, streamlined approach to the typical familiarization routine, basic programming, and development process of wireless applications for the ZigBeeR
Standard. Anaren Integrated Radio (AIR) modules are
high-performance, low-power RF modules incorporating TI chips. Tesla Controls offers a unique suite of
firmware solutions for building energy management
systems. Anaren designs and manufactures complex
components and subsystems for the consumer electronics, wireless infrastructure, defense, and satellite
markets. Tesla Controls provides wireless products
and consulting services to a variety of customers in the
industrial, medical, and government markets.
TriQuint Semiconductor, Inc. announced that it
has begun work on Phase II of the Defense Advanced
Research Projects Agency (DARPA) multi-year
Nitride Electronic NeXt-Generation Technology
(NEXT) program as a prime contractor. TriQuint
has received $12.67 million in support of the NEXT
contract to date. NEXT was created by DARPA to
research and develop devices suitable for complex,
high dynamic range mixed-signal circuits for future
defense/aerospace applications. Phase II of the NEXT
program is contracted to last 18 months. TriQuint is
already exploring and bringing to market derivative
12 High Frequency Electronics
devices made possible by breakthroughs demonstrated
in NEXT Phase I. “NEXT devices provide gamechanging technology for substantially improving performance in applications like phased array radar and
communications,” said TriQuint Vice President and
General Manager for Defense Products and Foundry
Services, James L. Klein. “The devices developed
under ‘NEXT’ open-up applications for lower voltage
GaN-based products, which achieve power densities
at least four times higher than GaAs devices. The
opportunities are exciting.” TriQuint Senior Fellow Dr.
Paul Saunier leads the NEXT program as principal
investigator. Dr. Saunier and his team reported stateof-the-art results at the 2011 GOMACTech conference
in Orlando, Florida. The team achieved an Ft>240 GHz
in a GaN circuit. DARPA’s NEXT Phase I concentrated
on fabricating very high frequency devices and meeting defined yield metrics. Phase II will concentrate on
process development in the pursuit of increased yields
while pushing the operating frequency to 400 GHz.
Phase III will seek to extend the operating frequency
to 500 GHz with still higher yields and reduced circuit
size. NEXT research also focuses on highly-scaled
enhancement-depletion (E/D) mode GaN mixed-signal
devices, similar to those used in gallium arsenide
(GaAs) E/D MMICs. TriQuint creates the latter, with
integrated digital control functionality and power handling for greater efficiency and cost-effectiveness.
CTT, Inc. announced the completion of a new and
expanded Website: www.cttinc.com. The new website
includes more than 175 all-new amplifier products and provides ease of use for visitors in search of
high power and lownoise amplifiers and
subassemblies, within
the frequency spectrum of 10 MHz to
100 GHz. The updated site includes product listings for High
and Medium Power
Amplifiers
including
Broadband,
Narrowband, RackMount and the new,
and expanding, line of GaN-based Power Amplifiers.
CTT’s Low-Noise amplifier (LNA) selections include
FlatPack Series, Narrowband, Broadband, Ka-Band
and the new family of GaAs pHEMT drop-in amplifiers. Mechanical outline drawings are also available in
PDF format for download. A unique feature of the new
website includes the option to sort amplifiers by column
headings by Frequency Range, Power and Noise Figure.
This allows simplicity in finding the exact amplifier to
88dB SFDR @ 100MHz
1.8V
LPF
LTC6409
LTC2262-14
0.9V Output
Common-Mode Set
Unleash Your High Speed ADC
®
With 1.1nV/ Hz input noise density and 88dB SFDR performance at 100MHz, the LTC 6409 enables your high speed ADC
to achieve outstanding performance. Its input common mode range includes ground and its output common mode can be
set as low as 0.5V, making the LTC6409 the perfect choice for driving AC- or DC-coupled signals into the latest 1.8V data
converters. Fully specified over the – 40°C to 125°C temperature range, and available in a tiny 3mm x 2mm QFN package,
the LTC6409 combines excellent AC performance with flexibility, robustness and a minimal footprint.
Features
Differential ADC Drivers
• Unity Gain Stable
• 1.1nV/ Hz Input Noise Density
• 10GHz GBW @ 100MHz
• DC- or AC-Coupled Inputs
• 0.5V to 3.5V VOCM
• –40°C to 125°C Fully Specified
• Tiny 3mm x 2mm QFN Package
Info & Free Samples
www.linear.com/6409
80dBc
HD2/HD3
(MHz)
Input
Referred
Noise
(nV/ Hz)
Voltage
Gain
LTC6409
110
1.1
R-set
LTC6406
30
1.6
R-set
LTC6404-1
15
1.5
R-set
LTC6400-20
120
1.9
20dB
LTC6416
90
1.8
0dB
Part Number
1-800-4-LINEAR
www.linear.com/ampsflyer
, LT, LTC, LTM, Linear Technology and the Linear logo are
registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
IN THE NEWS
meet design engineers’ requirements. Users also have
the ability to add amplifiers to the website’s RFQ
(request for quote) “virtual shopping cart.”
Industry researchers Strategy Analytics cite
TriQuint Semiconductor’s contributions to advancing state-of-the-art gallium nitride product and process development in their new “GaN Microelectronics
Market Update 2010-2015.” The report details how
the GaN-based semiconductor market continues
to grow for defense applications and commercial
markets that most value its superior power density,
efficiency and wideband capabilities. TriQuint offers
a wide selection of GaN products including MMICs,
packaged and die-level transistors, plus a new highpower RF switch family and renowned foundry services. TriQuint has been a GaN innovator since 1999,
currently leading R&D and manufacturing programs
for DARPA, US Air Force, Army and Naval laboratories.
Technology News
Congratulations to the NASA / JPL team on the
November 26, 2011 launch of the Mars Science
Laboratory. After
landing on Mars
in August 2012,
MSL’s prime mission will last one
Martian year (nearly two Earth years).
Researchers will use
the rover’s tools to
study whether the
landing region has
environmental conditions favorable for supporting
microbial life. The car-sized rover “Curiosity” is headed
to the Gale crater which has deep layers of sediment
for researchers to study. “Curiosity” is much larger
than any previous Mars Rover and five times heavier.
Delta Microwave, Oxnard, Calif., supplied L Band
GPS Filter/Amplifiers for the range safety system of
the Atlas V launch vehicle, X Band filters for the radar
in the descent vehicle, and UHF couplers for the communications radio in the rover.
J microTechnology released a useful App Note,
“Precise, Repeatable RF Measurements: Applying
CPW Probes to Everyday Test Problems,” intended to
help the user overcome challenges posed by electronic
components and assemblies that are shrinking in size,
ever higher in frequency, and demonstrating higher per-
14 High Frequency Electronics
formance—leading
to parts that are
too small to see or
test; a demand for
a test signal environment of greater
integrity; and the
need for more precise test methods.
Readers can visit
jmicrotechnology.
com for more info.
Emerson & Cuming Microwave Products released
a new white paper titled “Dielectrics.” The paper
explores the microscopic basis of dielectrics at the
atomic level and the macroscopic basis of dielectrics
using Maxwell’s equations. It includes theory and
equations governing RF and microwave interactions
with dielectrics. Also included are a survey of dielectric applications, dielectric forms and test methods.
Virtually every component of a microwave system uses
dielectrics. Proper choice of dielectric properties is a
cost effective way to enhance design. The primary uses
are as circuit board materials, radomes, and antennas.
This paper gives insight into the various dielectric
materials that can be applied to these designs. It is
free for download, at eccosorb.com under “Resource
Center.”
People in the News
AR RF/Microwave Instrumentation
announced the appointment of Mike
Alferman to the position of Regional
Sales Manager for the Pacific Rim.
Alferman joins Alan Melnyk in servicing AR clients in this region. Mr.
Alferman will provide service to India,
Singapore, the Pacific Rim Countries, South America,
and South Africa. This appointment will bring AR
additional focus in this very important region. Mike
became a Ham Radio operator more than 40 years ago;
and he was able to turn his interest in electronics and
RF into a successful career. He has held key positions
in RF Applications Engineering, Product Marketing
and Business Development throughout his career
at EPCOS/Siemens, Andersen Laboratories, IWPC,
Eastman Kodak, and Loral. His experience includes
working on the development of integrated RF modules
that enabled size reduction and functionality in cell
phones and laptops that are in widespread use today.
4G 4 U
Dual RF Mixer Needs Only 600mW
Actual Size
LTC5569 Total Solution Size: <220mm2
Including External Components
300MHz to 4GHz, 26.8dBm IIP3 Dual Active Mixer
®
The LTC 5569 is the lowest power dual mixer with the highest performance and widest bandwidth. Its small form factor is
optimized so you can pack more diversity or MIMO receiver channels in compact Remote Radio Heads. The mixer’s wide
frequency range allows you to build a wide range of multiband radios cost effectively. With integrated RF and LO balun
transformers, the LTC5569 saves cost and precious board space. Each channel can be independently shut down, providing
maximum flexibility to efficiently manage energy use.
Dual Mixer Family
Info & Free Samples
Part
Number
Frequency
Range
IIP3
(dBm)
Conv. Gain
(dB)
NF/5dBm
Blocking (dB)
Power
(mW)
Package
LTC5569
0.3GHz to 4GHz
26.8
2
11.7/17.0
600
4mm x 4mm QFN
LTC5590 0.9GHz to 1.7GHz
26.0
8.7
9.7/15.5
1250
5mm x 5mm QFN
LTC5591 1.3GHz to 2.3GHz
26.2
8.5
9.9/15.5
1260
5mm x 5mm QFN
LTC5592 1.7GHz to 2.7GHz
26.3
8.3
9.8/16.4
1340
5mm x 5mm QFN
LTC5593 2.3GHz to 4.5GHz
26.0
8.5
9.5/15.9
1310
5mm x 5mm QFN
www.linear.com/product/LTC5569
1-800-4-LINEAR
, LT, LTC, LTM, Linear Technology and the Linear logo are
registered trademarks of Linear Technology Corporation. All other
trademarks are the property of their respective owners.
High Frequency Products
FEATURED PRODUCTS
Resistive Products
Resistor
Vishay
Intertechnology,
Inc.
announced a new surface-mount
Power Metal Strip® resistor in a
2512 case size that combines a very
high power capacity of 3 W with
extremely low resistance values
down to 0.0005 Ω. The advanced construction of the WSLP2512 resistor
incorporates a solid metal nickelchrome or manganese-copper alloy
resistive element with low TCR (<
20 PPM/°C) and specially selected
and stabilized material. This results
in a high-power resistor with an
operating temperature range of –
65 °C to + 170 °C while maintaining
the superior electrical characteristics of the Power Metal Strip construction. Applications include:
switching and linear power supplies, instruments, power amplifiers, and shunts in automotive electronic controls such as engine, antilock brake, and climate controls;
industrial controls, including downhole test/measurement equipment
for oil/gas well drilling; and consumer product controls such as
inverter controls for HVAC systems.
Vishay Intertechnology
vishay.com
In the News
patented asymmetrical wrap geometry, the thermal dissipation of the
surface mount termination is
improved by increasing the solderable grounding area. This eliminates the need for bolt down heat
sinks and tabs, thereby reducing
assembly costs. All products are
available in RoHS versions and are
supplied on tape and reel for high
volume pick and place applications.
EMC Technology offers the widest
selection of SMT chip terminations
handling input power levels up to
250 W and covering frequency ranges up to 6 GHz. EMC Technology
emc-rflabs.com
offers solid-state reliability and
superior broadband performance.
With an operating frequency range
of 200 to 6000 MHz, it is ideal for
today’s wideband variable, attenuator requirements including VHF/
UHF, LTE and WiMax testing applications. This 50-Ohm device has a
dynamic range of 0 to 95 dB in 1 dB
steps and is guaranteed monotonic
across its entire bandwidth. SMA
female connectors are standard on
the input and output, but other connector configurations may be available upon request.
JFW Industries
jfwindustries.com
Oscillators
Coaxial Attenuator
The model 32K high reliability fixed
coaxial attenuator with 2.92 mm
(SMK) connectors covers DC to 42
GHz and is ideal for space and airborne applications. It is available in
3, 6, 10, 20, and 30 dB. Custom values are available. It features rugged
injection molded connectors; is
designed to meet the environmental
requirements of MIL-DTL-3933;
and is 100-percent subjected to
monitored thermal cycle (MTC) and
peak power tests.
Aeroflex Weinschel
Aeroflex.com/weinschel
YTOs
The Micro Lambda MLTO-Series
Permanent Magnet YIG-Tuned
Oscillators cover the frequency
range of 3-13 GHz. They are available in customer selected tuning
ranges and are fitted with a low
power main coil, and FM coil for
phase locking. All units operate
from a +8 Volt and –5 Volt supply
and operate over the 0º to + 65ºC
temperature range. Units do not
require a heater. Features: Up to 13
GHz Frequency Coverage; FM/
Phase-Lock Port; TO-8 Package;
High Reliability.
Micro Lambda Wireless
microlambdawireless.com
Clock Oscillator
SMT Termination
The SMT252503ALN2F, a 150 watt
AIN SMT termination, offers outstanding performance in a tight
tolerance 2% unit. Using EMC’s
16 High Frequency Electronics
Programmable Attenuator
The new 50P-1857, programmable
attenuator from JFW Industries
Crystek launched the CCHD-957, a
new Ultra-Low Phase Noise
HCMOS Clock Oscillator with
Standby Mode, featuring an
extremely low close-in phase noise
of -100 dBc/Hz @ 10Hz offset and a
typical noise floor of -170 dBc/Hz @
100kHz offset. This performance
Reduce Size and Weight
The MLTO and MLTM-Series TO-8 YIG-Tuned oscillators
from Micro Lambda Wireless provide designers a small
compact and easy to use alternative for tuneable oscillator
applications. These miniature oscillators provide wide
tuning ranges covering 2 to 9 GHz, excellent phase noise
performance of -125 dBc/Hz at 100 kHz offset in a TO-8
sized package. Both electromagnetic and permanent
magnet designs operate off +8 Vdc and -5 Vdc and do not
require a heater.
If PC board space is a premium, then these miniature
oscillators are just what you are looking for.
1" cube
Oscillators
.5 to 18 GHZ
Low Noise
Oscillators
2 to 20 GHZ
For more information about the MLTO &
MLTM Series or other products, please
contact Micro Lambda Wireless.
www.microlambdawireless.com
See our complete line of YIG-Tuned Oscillators
Mini-Oscillators
.5 to 10 GHZ
Same great performance as
standard oscillators at less
than one third the size!
Millimeterwave
Oscillators
18 to 40 GHZ
“Look to the leader in YIG-Technology”
46515 Landing Parkway, Fremont CA 94538 • (510) 770-9221 • sales@microlambdawireless.com
High Frequency Products
FEATURED PRODUCTS
performance at a fraction of the cost
and power. Applications:
3G
Basestations
(WCDMA,
CDMA2000);
LTE;
WiMAX
Basestations;
Digital
Video
Broadcast; E911 Location Systems;
General
Timing
and
Synchronization; Military Radio.
makes Crystek’s HCMOS Clock
Oscillator family an industry-leading choice for use in applications
such as: DACs (digital-to-analog
converters), ADCs (analog-to-digital converters), DAB (digital audio
broadcasting), and professional CD
audio equipment. The Crystek
CCHD-957
HCMOS
Clock
Oscillator also features a “Standby
Function” – when placed in disable
mode, the internal oscillator is completely shut down and its output
buffer is placed in Tri-State. This
family is housed in a 9x14 mm SMT
package and operates with a +3.3V
power supply consumring 15mA of
current. Stability is rated at
20-50ppm (0°C to +70°C) and ±2550ppm (-40°C to +85°C).
Crystek Corp.
crystek.com
Crystal Oscillator
The MD-023 series is the first product to be in introduced in Vectron’s
Extended
Holdover
Crystal
Oscillator platform. With aging
rates of 0.08ppb/day and temperature stabilities of 0.1ppb from 0 to
70°C, the MD-023 is capable of providing holdover of 6 µs for 24 hours
over a 10°C temperature change.
The product employs an ultrastable
ovenized quartz oscillator with proprietary Vectron digital correction
algorithms to achieve rubidium like
18 High Frequency Electronics
Vectron International
vectron.com
DTOs
PMI offers a full line of digitally
controlled oscillators (DTO’s) covering various frequencies in the
500MHz to 18GHz range. All models are designed to withstand stringent military ground or airborne
environments. These models use
the latest internal digital calibration techniques such that frequency
drift over the operating temperature range is minimal. All units
offer fast switching speeds and stable frequency outputs with low
phase noise. Features: High Level of
Frequency
Accuracy;
Low
Frequency Drift; Low Phase Noise;
Low
Harmonic
Content;
Applications: EW / SIGINT; Radar
Test Equipment; Microwave Radio;
Instrumentation Modules.
Planar Monolithics Industries
pmi-rf.com
Synthesizers
YIG-Based Synthesizers
The MLSP-Series of YIG-Based
wideband synthesizers are ideal as
the main local oscillators in receiving systems, frequency converters
and test and measurement equipment. They provide 1 kHz frequen-
cy resolution over the 600 MHz to
20 GHz frequency range. Power
levels of +8 to +13 dBm are provided throughout the series and full
band tuning speed is 3 mSec. The
units are 5” x 3” x 1” high and fit a
2 slot PXI chassis. Features include
superior phase noise; 1 kHz step
size; external reference 1 – 2000
MHz (optional); PXI, compact PCI
size compatible; 5 line serial and
USB control.
Micro Lambda Wireless
microlambdawireless.com
Ka-Band Synthesizer
The
KB-39500
Frequency
Synthesizer from EM Research
operates fixed at 39.5 GHz, features
low phase noise (<-80 dBc/Hz MAX
@ 10 KHz) and +18 dBm output
power. The unit locks to an external
10 MHz reference. The unit is available in fixed or programmable frequencies to 40 GHz with internal or
external references, improved phase
noise and reduced package sizes.
Programmable designs are available with step sizes as low as 100
Hz. The KB units are designed for
applications such as millimeter
wave, radar, fixed/mobile (VSAT),
SatCom and digital radio. Custom
units are available in fixed and programmable frequencies from 12
© 2012 AWR Corporation. All rights reserved. AWR is a National Instruments Company.
Add a
macroscope
to your
Microwave
Office
Stop waiting and start designing™
See the big picture quickly in one
design environment with VSS.
Zoom in to make circuit tweaks.
Then zoom out to see the system
impact. VSS does system budget
analysis and identifies sources of
IM products, harmonics, and noise
directly on your Microwave Office
circuits. VSS’s powerful simulator
defines complex systems — radio
and circuit designs, baseband
signal processing, algorithmic
development, and digital fixed-point
implementations too. Grab a test
copy at awrcorp.com/VSS.
VSS™
SYSTEM
SIMULATOR
High Frequency Products
FEATURED PRODUCTS
GHz to 40 GHz in a standard package of 5.00” x 2.50” x 1.25”.
design; EMI enclosure; cost effective product.
EM Research
emresearch.com
Luff Research
luffresearch.com
Frequency Synthesizer
Frequency Synthesizers
The TLSE is an improved high performance frequency synthesizer
ideal for many SatCom, telecommunication, and instrumentation
applications. This synthesizer’s frequency control is via standard
industrial busses and has multidrop capabilities. The input reference frequencies are either 5, 10 or
100 MHz. Additionally, the synthesizer circuitry cleans-up the input
reference signal. With no input
present the unit switches automatically to the internal reference.
Features: Output frequency in
bands up to 25 GHz; low phase
noise, spurious and microphonics;
reference frequencies: 5 , 10 or 100
MHz or internal reference (±0.5
PPM); standard frequency control
options, RS-232/422/485, and multidrop capable; reliable field proven
The
HMC767LP6CE,
HMC769LP6CE
and
HMC778LP6CE are full-featured
fractional-N PLL frequency synthesizers with integrated microwave
VCOs which provide output frequency coverage from 8.45 to 10.8 GHz.
These new products offer low open
loop phase noise of -140 dBc/ Hz at 1
MHz offset, a 350 MHz reference
path input and a 14-bit reference
divider. The advanced delta-sigma
modulator design enables ultra-fine
fractional step sizes while achieving
industry leading phase noise and
spurious emission performance.
Features: external triggering, double-buffering, exact frequency generation with 0 Hz frequency error,
frequency modulation, phase modulation and more. The units are
housed in leadless QFN 6 x 6 mm
surface mount packages and deliver
Get info at www.HFeLink.com
20 High Frequency Electronics
up to +12 dBm output power, making them ideal for directly driving
the LO port of many of Hittite’s high
linearity, double-balanced and I/Q
mixer/receiver products.
Hittite Microwave Corp.
hittite.com
PLL Synthesizer
Analog Devices introduced a PLL
(phase-locked loop) frequency synthesizer that can be used to implement local oscillators as high as 18
GHz in the up-conversion and downconversion sections of wireless
receivers and transmitters. The
ADF41020’s high bandwidth allows
designers to potentially eliminate a
frequency-doubler stage, which simplifies system architecture and
reduces cost in applications including microwave point-to-point and
multi-point radios, wireless infrastructure equipment, VSAT (very
small aperture terminal) radios,
semiconductor test equipment,
radar applications and private
High Frequency Products
FEATURED PRODUCTS
mobile radios. It consists of a low
noise, digital phase frequency detector, a precision charge pump, a programmable reference divider and
high-frequency programmable feedback dividers. A complete synthesizer can be implemented if the PLL is
used with an external loop filter and
VCO (voltage controlled oscillator).
Analog Devices, Inc.
analog.com
I/Q Demodulator
Linear Technology announced the
LTC5585, an ultrawide bandwidth
direct conversion I/Q demodulator
with outstanding linearity performance (IIP3 = 25.7dBm and IIP2 =
60dBm at 1.95GHz). The device is
capable of baseband output demodulation bandwidth of over 530MHz,
which can support new generation
wideband LTE multimode receiv-
ers’ and digital pre-distortion (DPD)
receivers’ bandwidth requirements.
The I/Q demodulator operates over
a wide frequency range from
700MHz to 3GHz, covering virtually all cellular base station frequency bands. Unique to this device are
two built-in calibration features.
One is advanced circuitry that
enables the system designer to optimize the receiver’s IIP2 performance, increasing from a nominal
60dBm to an unprecedented 80dBm
or higher. The other is on-chip circuitry to null out the DC offset voltages at the I and Q outputs. Both
serve to enhance receiver performance. Moreover, the LTC5585
delivers excellent P1dB of 16dBm.
To further enhance its use in direct
conversion receiver applications,
the LTC5585 offers very low I/Q
amplitude and phase mismatch.
The amplitude mismatch is typically 0.05dB, while the phase error
is typically 0.7 degree, both measured at 1.95GHz. This combination
produces a receiver image rejection
capability of 43dB. Because of its
very wide bandwidth capability, the
LTC5585 is especially well suited
for multimode LTE, W-CDMA and
TD-SCDMA base stations DPD
receivers as well as for main receiver applications. Particularly for
DPD, these latest generation base
stations are pushing demodulation
bandwidth of over 300MHz. The
LTC5585 can be easily configured
to meet these bandwidth challenges. Beyond wireless infrastructure
applications, the LTC5585 is ideal
for applications in military receivers, broadband communications,
point-to-point microwave data
links, image reject receivers and
long-range RFID readers.
Linear Technology
linear.com
Get info at www.HFeLink.com
22 High Frequency Electronics
High Frequency Design
Receiver Architectures
New Components Call for a
Hardware Comparison of
Receiver Architectures
By Todd Nelson, Signal Chain Module Development Manager, Linear Technology Corp.
T
he battle between between superheterodyne hardware and direct
superheterodyne conversion hardware?
radio architecture
and direct conversion Review of the Basic Architectures
Edwin H. Armstrong invented the super(homodyne or zero-IF)
radio architecture goes heterodyne receiver architecture in 1918, by
back to the 1930s. Each most accounts. In this common type of receiver,
has its advantages for the radio frequency (RF) signal is mixed with a
particular types of equip- local oscillator (LO) signal to generate an interment. Superheterodyne is popular in cellular mediate frequency (IF) which is then demodubase stations and direct conversion has prolif- lated. The LO frequency is offset from the RF
erated in software-defined radio applications carrier frequency, creating images of the signal.
such as municipal radios. The simplicity of The IF signal is passed, while all other images
direct conversion hardware promises lower are rejected by filtering. In modern receivers,
cost, lower power consumption and less board the IF signal is converted to digital using an
space than superheterodyne, which is attrac- analog-to-digital converter (ADC) and then
tive to cellular service providers. Yet the hard- demodulated in the digital domain (see Figure
ware simplicity is offset by the software com- 1).
The direct-conversion receiver was develplexity to deal with inherent problems of DC
offset. This article will probe the perceptions oped a few years later as an alternative to the
and realities of the hardware differences, superheterodyne receiver. However, unlike the
exploring the easy path and simply ignoring superheterodyne, the LO frequency is not offset
from, but equal to the received signal’s frethe software issues.
The tsunami of data transmitted over cel- quency. The single mixer is replaced by two
lular networks was brought on by tremendous mixers, one fed with the RF and LO signals,
advances in smart phones, tablets and other and the other fed with the RF signal and a
devices that access the Internet in these fre- quadrature LO signal. The result is a demoduquency bands. This has increased the technical lated output which is digitized by two ADC
requirements, while pressuring suppliers to converters at baseband (see Figure 2). In other
reduce costs. Modern base stations take many words, the intermediate frequency is zero. The
forms—from traditional racks to smaller units filtering requirement is simplified because only
operating on just a few Watts of power.
The circuitry required to support multiple channels in tiny base station form
factors assume a variety of approaches to
integration. With recent developments,
just how significant is the difference Figure 1 • Superheterodyne Receiver Architecture
The simplicity of direct
conversion hardware
promises lower cost,
lower power
consumption and less
board space than
superheterodyne.
24 High Frequency Electronics
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HFeLink 101
High Frequency Design
Receiver Architectures
calculated from data sheet parameters. The expectation is
that the direct conversion architecture will prove to be
significantly better in both respects.
Figure 2 • Direct Conversion Receiver Architecture
a lowpass filter is required – unlike the superheterodyne
with its bandpass filter.
Evolution of Hardware
Regardless of the architecture, there have been steady
improvements over the decades. The performance of integrated circuit (IC) components continues to improve while
at the same time consuming less power and requiring less
printed circuit board (PCB) area. ADC resolution and
sample rates have improved to allow wider bandwidth
signals and higher input frequencies.
An early attraction of the direct conversion receiver
was the single frequency conversion to baseband. In past
decades, the superheterodyne receiver used multiple frequency downconversion stages. Gradually, as mixer and
filter technology improved, stages were consolidated to the
point where a typical superheterodyne receiver has only
one frequency conversion stage in analog and one digital
downconversion stage implemented in a digital signal processor.
Another attraction of the direct conversion architecture
is lowpass filtering. The superheterodyne architecture
requires a bandpass filter at the IF. In many cases, the
bandpass filter is of a high order or of a surface acoustic
wave (SAW) type. SAW filters require a hermetic package
and are often quite large and expensive. While there have
been tremendous improvements in SAW filter technology
and packaging, the lowpass filter is still considered to be
more attractive.
Latest Hardware Comparison
To attempt a reasonable comparison of cost, power and
board space, it is necessary to collect the components necessary to implement four receiver channels for a small
base station suitable for 20MHz signal bandwidth. Each
superheterodyne receiver uses a single mixer, a variable
gain amplifier, a SAW filter, a second IF amplifier stage
and a high-speed ADC. Each direct conversion receiver
uses an I/Q demodulator, two baseband amplifiers and two
high-speed ADCs. An example board layout is used to
compare the estimated board space required for these components and the nominal power consumption is simply
26 High Frequency Electronics
Superheterodyne Example
For four channels of superheterodyne, there are commonly available dual mixers in QFN packages of 5mm x
5mm – so two duals are required. With integrated balun
transformers and internal matching components for the
RF and LO inputs, the number of passive components is
minimal and mostly available in 0201 and 0402 sizes –
these shall be ignored in this comparison since they are
also required for direct conversion. Similarly, there are
dual digital VGAs available in suitable frequency ranges.
Such dual VGAs are also available in 5mm x 5mm QFN
packages—again, two are required to implement four
channels. A bit of filtering may be required following the
mixer stages, so a few 0402 inductors and 0201 capacitors
are in order. To achieve the required selectivity, a SAW
bandpass filter is required for superheterodyne receivers.
A separate SAW filter is required for each of the four channels. At RF frequencies, SAW filters can be quite small. In
the common IF range from 70MHz to 192MHz, SAW filters
can be found in 5mm x 7mm packages. The SAW filter will
require a few impedance matching components even if the
output of the preceding VGA and input of the following
amplifier are 50 ohms. Normally, another gain stage is
required to make up for the insertion loss of the filter.
However, a new quad ADC with integrated amplifiers
is offered in a System in Package (SiP), the LTM9012-AB
µModule® ADC from Linear Technology. At 15mm x
11.25mm, it is smaller than the equivalent quad ADC with
four differential amplifiers and the associated bypass
capacitors and anti-alias filter components. With 20dB of
gain, the LTM9012 achieves 68.5dB signal to noise ratio
(SNR) and 79dB spurious-free dynamic range (SFDR). The
amplifiers and the filtering within the LTM9012-AB limit
the input frequency to about 90MHz. Therefore, a 70MHz
IF is suitable, but not the higher IFs often implemented
with superheterodyne receivers in base station applications. Nonetheless, this offers the most compact implementation.
The LTM9012 represents a different approach to integration. The µModule or SiP packaging allows separate
die to be assembled along with various passive components
on a laminate substrate, and molded such that it looks like
a regular ball grid array (BGA) integrated circuit (IC). In
this case the ADC is optimized for low power and good AC
performance using a small-geometry CMOS process. The
amplifiers use a silicon-germanium (SiGe) process in order
to maximize their performance. These are traditional differential amplifiers, so the gain is set with resistors at
10V/V or 20dB. A true op amp input simplifies the matching by isolating the high frequency sampling glitches from
the signal path and also allows for single-ended signals to
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Architectures
Figure 3 • Example Layout of Superheterodyne Receiver
mate up with the differential ADC inputs internally. Most
monolithic ADCs with buffered front-ends provide no gain
at all, are still differential and only offer the isolation of the
glitches. Equally beneficial is the anti-alias filtering that
limits wideband amplifier noise. In terms of overall board
space, since all of the reference and supply bypass capacitors are inside the package, the overall system design can
be packed very tightly without compromising performance.
Such compromises often occur when reference and supply
bypass capacitors are too far from or near digital signals
which can then corrupt the data conversion process.
Finally, the substrate allows the pin assignments to flow
logically: analog inputs on one side, digital outputs on the
other side of the package.
In this example, the number of active components is
five, with four SAW filters and 80 other small passive components (see Figure 3). The overall area is about 43 mm x
21 mm = 903 mm2; however not all of that area is utilized,
so the effective area is more like 700 mm2. Of course, this
is on one side of the board and company-specific design
rules may allow for an even more compact layout. For
power calculations, this example uses the LT5569 as the
dual mixer, the AD8376 as the dual VGA and the LTM9012AB as the combination of the second amplifier stages and
quad ADC. The mixer is an active type, which operates
over a wide 300MHz to 4GHz frequency range, so a single
part can be configured to operate on any of the cellular
bands from 700MHz to 2.7GHz. With best-in-class power
consumption, it also has robust inputs that can withstand
strong in-band blocking interference signals without significantly degrading its noise figure. The overall power
28 High Frequency Electronics
consumption of the four channel system is 4.9 Watts, not
including possible power dissipated in resistive dividers.
Direct Conversion Example
For four direct conversion channels our only options
are individual I/Q demodulators, so four of those in 5mm x
5mm QFN packages are required. Some, like the LT5575,
have integrated RF and LO baluns to minimize the number of external components. A bit of filtering is beneficial,
and of course some small bypass capacitors. For the lowpass filter, multiple L-C and R-C sections are done. For the
gain stage, the LTM9012-AB is again appropriate. As a
quad, it only supports two direct conversion channels, so a
second one is needed.
In this example, the number of active components is 6
with 84 small passive components (see Figure 4). The
overall area is about 27 mm x 24 mm = 648 mm2. For
power calculations this example uses the LT5575 I/Q
demodulator and two of the LTM9012-AB. The overall
power consumption of the four channels is 5.1 Watts, not
including possible power dissipated in resistive dividers.
However, the ADC is sampling at 125Msps, which is common but likely more than is necessary for 10MHz. At
65Msps, the same function could be done with much less
power consumption in the ADC. Recalculating the power
consumption brings the new total to 4.6 Watts.
Perception and Reality
Not too many years ago, a superheterodyne receiver
used multiple mixers and multiple SAW filters per channel. And SAW filters in the day could be 25mm x 9mm.
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Architectures
Figure 4 • Example Layout of Direct Conversion
Receiver
The passive core mixers required additional gain stages to
account for the insertion losses. Such recent history clouds
the perception of the gap in hardware complexity between
superheterodyne and direct conversion receivers. On a
percentage basis, the board area used for the superhetero-
dyne receiver is 39% more than the direct conversion,
which is a significant percentage but in real PCB area the
difference is not so great. 39% of 903 mm2 is 352 mm2, or
about the size of your thumb print. On a percentage basis
the power consumption difference is not significant at all.
The perception of a significant size and power penalty
for the superheterodyne receiver is relative to the overall
size of the base station transceiver itself, of course. For a
traditional rack-mount form factor, a thumb-sized amount
of PCB area may not matter. For a tiny base station that
could fit in the palm of your hand, a thumb-sized amount
of PCB area is very significant.
The reality is that integration continues, sometimes
slowly or in great leaps. The reduction in board space or
power consumption may apply to one architecture to a
greater extent than the other. The recent examples that
apply to the superheterodyne are products such as the
LT5569 dual active mixer. The author is not aware of any
dual I/Q demodulators available for cellular base station
applications, although they do exist for other applications
at lower frequency ranges. The recent example of integration that applies to both architectures is the LTM9012
quad ADC with integrated amplifiers. The device’s LVDS
serial interface not only allows the ADC to be smaller, but
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30 High Frequency Electronics
may allow the field programmable gate array (FPGA) or
digital signal processor (DSP) to also be smaller than that
of four ADCs with parallel interfaces. However, the direct
conversion architecture still requires twice the number of
ADCs.
The example discussed above makes the assumption
that the performance requirements of the cellular base
station are such that high performance components are
required throughout the chain. The products used in the
example utilize optimized semiconductor processes such as silicon germanium (SiGe) or complementary metal
oxide semiconductor (CMOS) processes
that are otherwise not conducive to
integration with each other – or at least
not without performance degradation.
Certain size base stations may have
performance requirements that allow
the use of highly integrated, single-chip
transceivers, such as femtocells.
Improvements in the integrated blocks
of such chips will allow them to be
applied to larger base stations. And
here the two architectures reach a barrier: the signal filter. The direct conversion receiver uses a lowpass filter that
can be implemented in silicon. To date,
the bandpass filter used in superheterodyne has proven extremely difficult to
implement in silicon. This is a reality of
the moment, not necessarily a permanent barrier. Perhaps someday a technological breakthrough will occur and
highly selective bandpass filters will be
feasible on-chip. Until then, the direct
conversion receiver architecture has a
distinct advantage for potential integration of the entire receiver chain
where performance allows.
About the Author:
Todd Nelson serves as Signal Chain Module
Development Manager at Linear Technology Corp. He
previously served as Marketing Manager for Linear’s
Mixed Signal products. He received his Bachelor’s degree
in Engineering from Kettering University, and his
Masters in Engineering Management from Santa Clara
University.
Conclusion
The direct conversion receiver architecture for cellular base stations is simpler than the superheterodyne receiver
architecture, at least in terms of hardware. Recent products allow multichannel implementation of superheterodyne receivers to be much smaller
than before. While still larger on a
percentage basis, the difference may
not be significant. Therefore, the superheterodyne is expected to remain the
preferred receiver architecture for cellular base stations.
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February 2012
31
High Frequency Design
ANTENNA DESIGN
Non-Resonant Slotted
Waveguide Antenna Design
Method:
Inclusive Internal and External Electromagnetic
Mutual Coupling Between Slots
By Michal Grabowski
I
n this paper a nonresonant
slotted
waveguide antenna
design method is presented. The internal and
external mutual coupling
between adjacent radiating slots is considered in the described method. In order to confirm the usefulness of this
method, a non-resonant waveguide array
antenna with longitudinal slots cut in a broad
waveguide wall was designed. The correctness
of this method was evaluated by comparison of
the results obtained in calculations and their
equivalents reached in computer simulations
with the use of CST MICROWAVE STUDIO®.
In this paper a nonresonant slotted
waveguide antenna
design method is
presented.
Introduction
Slotted waveguide antennas (see Fig.1)
have been the subject of extensive research for
several years. These structures are commonly
used in microwave transmitter and receiver
devices. Such antennas radiate energy from
Fig. 1 • Non-resonant slotted waveguide antenna with
longitudinal slots cut in a broad waveguide wall.
32 High Frequency Electronics
feeding waveguide to a free space through
several slots cut in a broad or narrow wall of a
rectangular waveguide. Special interest in
such antennas is caused by their planar and
compact structure, high power handling and
electrical parameters, such as high efficiency,
relatively wide frequency band and good
return loss, [1][2][3]. Their additional advantage is the ability to combine vertical slotted
waveguides as phased array with shaped and
electronically switched multi-beam radiation
patterns, which enables the observation of
many “moving targets” at the same time, [2]
[3].
Slotted waveguide array antennas can be
realized both as resonant and non-resonant
according to the wave propagation inside the
waveguide (respectively standing or travelling
wave) [4][5][6][7]. Among antennas from the
non-resonant subgroup it is possible to distinguish antennas that work over and below
resonant frequency (respectively distance
between adjacent slots smaller or larger than
the half waveguide wavelength). Non-resonant
slotted waveguide array antennas, which are
tipped with a waveguide termination, provide
a feature of squint (not occurring for resonant
ones). This effect causes an angle deviation of
an end fire direction from a normal to the
antenna aperture. Additionally, this deviation
is dependent upon an operating frequency and
is described as:
(1)
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IF/RF MICROWAVE COMPONENTS
432 rev S
High Frequency Design
ANTENNA DESIGN
where C0 is a phase difference of currents feeding adjacent slots, while d is a physical distance between these
slots.
One use for these antennas is in a thin array for radiolocation devices. It is desirable in these applications to
transmit and receive energy to and from a narrow sector
of a free space. This requirement is realized by combining
several identical parallel rectangular waveguide antennas with close to half-wave slots cut in their walls [3][8]
[10]. The radiation patterns of such antennas are dependent on complex amplitude distributions of equivalent
currents feeding slots (currents corresponding to surface
currents superposition which flows over walls of waveguide and crossing slots). Appropriate amplitude distributions of current fed radiating slots are determined
during the synthesis process for a definite spatial radiation pattern. Multi-slots array spatial radiation patterns
might be determined by several methods, described in
literature [2][3], such as: Taylor, Dolph-Tschebyshev or
Fourier Integral Methods.
The design of the slotted waveguide array antenna is
a fairly complicated task. It requires including an influence of the internal (by a supplying slots waveguide) and
the external (through the open space) mutual coupling
between radiating slots on a radiation pattern. Such
mutual coupling distorts a radiation pattern of an antenna array as a rule, what can be mostly seen as a side lobes
level increased, widening of a main lobe and an angle
deviation of an end fire direction from a normal to an
antenna aperture. These effects are especially significant
for array antennas with a small number of slots (N ≤ 12).
In an extreme situation mutual coupling can lead to an
antenna physical non-realizability, which was studied in
[10].
In this paper a design method of a slotted waveguide
antenna with longitudinal slots cut in a broad waveguide
wall is proposed. In the presented method the internal
and external mutual coupling mentioned above is taken
into account. This method based on the Full-Wave method ([6][7][8][10]) is an extension of the external mutual
coupling effect described in [9][11]. In order to confirm
the usefulness of this method, the non-resonant waveguide array antenna with 12 longitudinal slots cut in a
broad waveguide wall was designed. The effect of internal
and external mutual coupling was evaluated by the comparison of the radiation pattern obtained with the presented method, and the pattern reached with what is
commonly known as the Energetic Method, [3] (not
including mutual coupling between slots). The correctness of the proposed method was confirmed by comparing
results reached in computer simulations with CST
MICROWAVE STUDIO.
34 High Frequency Electronics
Design Method of Slotted Waveguide Antennas
Including Internal and External Mutual Coupling
Between Slots
The design of a multi-slots waveguide antenna
requires determining the slots’ geometric dimensions and
their location in a waveguide dependent on the excitation
amplitude distribution of equivalent feeding slots. Such
antennas can be analyzed by various methods.
Unfortunately the simplest methods such as the Energetic
([3]) and the Full-Wave ([6][8][10]) do not take into consideration both internal and external mutual coupling
effects between slots. Thus the results are encumbered
with errors.
The most significant effects which should be considered in the design process are internal and external
mutual coupling between slots. The internal mutual couplings are caused by the partial reflections of the incident
electromagnetic wave from succeeding slots in a waveguide. These partial reflections cause a considerable displacement of the EM field inside the waveguide. The
external mutual couplings are induced as the partial
wave pervades from one slot to the others through the
open space. Similar to internal couplings, these pervasions cause the EM field displacement inside the waveguide and lead to the change of the slots’ immittance. The
last significant effect which should be taken into account
in the waveguide antenna design process is to consider
the reactance or susceptance properties of slots, when
their lengths are different from that of resonance.
In non-resonant antennas distance between adjacent
slots d is different then l01 /2, where l01 is a waveguide
a)
b)
c)
Figure 2 • Basic solutions of the slotted waveguide
antennas with: (a) longitudinal slots, (b) inclined slots
cut in a broad wall, (c) inclined slots cut in a narrow
wall.
High Frequency Design
ANTENNA DESIGN
wavelength. Such antennas are tipped with waveguide
terminations, resulting in a wave propagating in the
waveguide being close to the travelling wave. In Fig.2 are
shown the three basic solutions of slotted waveguide
antennas. Respectively, there are antennas with longitudinal slots cut in a broad wall (Fig. 2a), and inclined slots
cut in a broad (Fig. 2b) and a narrow wall (Fig. 2c) of the
rectangular waveguide.
In order to reach an optimal coupling of slots and feeding waveguide, the length of all slots near to the resonant
length are desired (typically it is le k0.9 • lr, 1.1 lrl). By the
resonance frequency we mean the frequency when an
imaginary part of impedance or admittance represented
the slot equals zero. So for resonance slots their impedance or admittance are real values.
As mentioned above the design method proposed in
this article combines the Full-Wave Method including
only internal mutual coupling and the method presented
in [9][11] including only external mutual coupling. The
presented method extended by a correction stage allows
us to take into account the influence of slots’ susceptance
or reactance on the radiation pattern, when their length
are different than resonant (l≠lr). The basis of this method is to evaluate partial reflections of the electromagnetic
wave from succeeding slots which cause a considerable
displacement of the EM field inside the waveguide. An
essential challenge with this approach is to calculate a
complex amplitude distribution of waves propagating
from the waveguide input to the matched termination
and in the reverse direction (see Fig. 3). Depending on
slot types, such structures can be analyzed as different
equivalent circuits. For inclined slots cut in a broad wall
of rectangular waveguide (see Fig. 2b) each of these slots
become the serial lumped impedance. On the contrary
longitudinal shunt slots cut in a broad wall (see Fig. 2a)
and inclined slots cut across a narrow wall (see Fig. 2c)
can be determined as parallel admittance inserted in a
waveguide.
Figure 3 • Electrical schemes of the N-slotted waveguide antennas equivalent circuits, with slots represented by normalized parallel admittance.
Figure 4 • Electrical scheme of the two-port substitute
circuit where the slot is represented by parallel admittance.
In the next part of this article the algorithm of our
design method is limited only for waveguide antennas
with longitudinal slots cut in a broad waveguide wall. The
equivalent circuit of such an N-slotted waveguide antenna, where each slot is represented by a normalized parallel admittance (yk = Yk/Y0 = gk+jbk) inserted into a long
transmission line with a characteristic admittance Y0, is
shown in Fig. 3.
The circuit shown in Fig. 3 can be analyzed as a cascade connection of N two-port substitute circuits shown
in Fig. 4.
Algorithm of the Non-Resonant Slotted Waveguide
Antenna Design Method
As mentioned above, the proposed algorithm enables
us to design antennas including the internal and external
mutual coupling between slots. At first for the desirable
complex amplitude distribution of the feeding slots equivalent current Ik and desirable value of the loss coefficient
x (defined as the ratio of the power lost in the waveguide
N
termination to the input power) it is necessary to recalculate the relative power distribution radiated by each slot
Pk normalized to the antenna input power P0.
In the next stage the conductance of all antenna slots
must be evaluated. In this stage only internal mutual
coupling is considered and all slot lengths are assumed as
the resonant. The Full-Wave Method presented in [6][8]
[10] will be used.
The transmission matrix T of the circuit shown in Fig.
4 equals the product of the transmission matrixes of a
long transmission line with a characteristic admittance
Y0 and a parallel inserted normalized admittance yk. The
transmission matrix of the circuit, shown in Fig.4, equals
([6][8][10]):
(2)
36 High Frequency Electronics
Get info at www.HFeLink.com
High Frequency Design
ANTENNA DESIGN
After multiplication Equation (2) equals:
For the determined conductance in the first stage of
the presented algorithm the power amplitude distribution Pk it is possible to recalculate normalized values of
the conductance for all slots. The conductance of the k-th
slot, is defined as, [6][8][10]:
(8)
(3)
According to the Fig.4 all incident and reflected waves
at the input of the k-th circuit (ak–1 and bk–1) are related to
the appropriate waves at the output of this circuit (ak and
bk) through the following simple formula:
(4)
So, complex amplitudes at the input of the k-th circuit
equal:
where Ak, Bk, Ck and Dk are determined in Equation (7).
Assuming that the antenna is loaded with the ideally
matched waveguide termination (gN+1 =1), the design
begins from the last N-th circuit. Then the absolute
square of the amplitude bN equals the power lost in
matched termination (ubnu2=xN) and the amplitude of the
wave reflected from the termination equals aN =0 (see
Fig.3). For this assumption the real and imaginary amplitudes of the incident and reflected waves for the waveguide termination equal: AN = 0, BN = 0, CN = !xN, DN = 0.
Conductance of the N-th slot (see Fig.4) evaluated with
Equation (8) is given as follows ([6][8][10]):
(9)
(5)
For known conductance of the N-th slot it is possible
For ak–1 = Ak–1+i Bk–1, bk–1 = Ck–1+i Dk–1, ak–1 = Ak+i Bk and bk = Ck+i Dk, to determine (with Equation (7)) real and
imaginary parts of incident aN–1 and
Equation (5) is given as follows ([6][8][10]):
reflected bN–1 waves on the input of the
N-th circuit (see Fig.3). At the beginning it
is assumed that slot susceptance in Equation (7) equals
(6)
zero (bk=0). For known components AN–1, BN–1, CN–1 and
DN–1, normalized conductance gN–1 can be evaluated with
According to Equations (4) and (6) the parameters Equation (9). In the analog way it is possible to evaluate
the amplitudes of the incident and reflected waves for the
Ak–1, Bk–1, Ck–1 and Dk–1 take the following forms:
N-1-st circuit. In a similar way the conductance of all
slots cut in the antenna can be evaluated. These values
take into consideration only internal mutual couplings
between slots.
In the third stage of the presented algorithm, the
slots’ geometrical parameters which are crucial for the
coupling between the slot and the feeding waveguide
(such as the displacement of a slot from axis of a waveguide xk and the length of the slot lk) should be evaluated.
(7) For known slot conductance values (evaluated in the previous stage) the geometrical parameters such as xk and lk
can be obtained with proper closed form formulas which
are presented in several publications. The most popular
and accurate closed form formulas which allow us to
obtain complex admittance for slots cut in the broad
waveguide wall were presented by Oliner in [12]. For
known slots geometrical parameters such as xk and lk it is
needed to recalculate the admittance of each slot.
Recalculated in such way, admittances are complex values and include the susceptance properties of slots.
38 High Frequency Electronics
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High Frequency Design
ANTENNA DESIGN
In the last stage of the proposed method,
for known slot admittance yk= gk+i • bk (evaluated in the previous stage) it is possible to
recalculate components Ak, Bk, Ck and Dk
more precisely to include slot susceptance
(see Equation (7)). In this stage the external
mutual coupling between slots will be taken
into account. Similar to the second stage of
this algorithm, the design of the antenna
begins from the last N-th circuit (AN = 0, BN
= 0, CN = !xN, DN = 0). So, the admittance of
the N-th slot can be evaluated with Equation
(9).
In order to evaluate the external mutual
coupling between the N-th slot and rest of
the waveguide slots, the N-th slot admittance
including the mutual admittance between
this slot and rest of the slots should be recalculated. These calculations can be done with
formulas presented in [9]. In this article the
mutual slot admittance was evaluated based
on Babinet’s principle linking the performance of the slot array to the equivalent
dipole array. The active admittance of the
longitudinal slot cut in a broad waveguide
wall (consider interrelations among all slots)
can be evaluated as follows, [9]:
(12)
(13)
(10)
where a and b are respectively interior broad and narrow wall dimensions of the rectangular waveguide, l0 is
the free space wavelength, l01 is the waveguide wavelength, Zk and Zl are the self-impedance of the dipoles
equivalent via Babinet’s principle to the self-admittance
of the k-th and l-th slots, Zkl is the mutual admittance
between k-th and l-th dipoles. The impedance of the k-th
dipole equivalent via Babinet’s principle to the k-th longitudinal slot cut in a broad waveguide wall can evaluated
with the equation:
The mutual impedance between two dipoles equals:
Zlk= Rlk+i • xlk.
Evaluated with Equation (10), active admittance of
the N-th slot y AN = g NA + i • b NA can be used to recalculate
components of incident and reflected waves AN–1, BN–1,
CN–1 and DN–1 for N-1-st circuit (see Fig.3). These values
can be reached with Equation (7), but as the slot conduc-
(11)
where yk is the normalized slot self-admittance recalculated in the third stage of the presented algorithm. The
mutual impedance Zlk between k-th and l-th dipoles (see
Fig.5) can be evaluated with formulas presented in [13].
The real and imaginary part of this impedance can be
Figure 5 • Scheme of two independent dipoles geoevaluated as follows, [13]:
metrical dimensions.
40 High Frequency Electronics
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The Design Engineers Search Engine finds the model you need, Instantly • For detailed performance specs & shopping online see
U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
495 rev org
High Frequency Design
ANTENNA DESIGN
tance and susceptance gk and bk, values b NA and g NA
obtained with Equation (10) should be used. In a similar
way the conductance (with Equation (8)) and afterwards
the active admittance (with Equation (10)) of the N-1-st
slot can be evaluated. In this manner it is possible to
evaluate the amplitudes of the incident and reflected
waves and admittance values for all antenna slots.
The phase of the equivalent current flows through the
k-th slot can be recalculated as follows, ([6][8][10]):
(14)
where m=1,2,3,... . Parameter m is chosen in that way to
minimize the phase deviation k from the linear distribution. The phase of the equivalent current obtained with
Equation (14) flowing through all slots enables us to
determine the deviations of the phase angles from the
linear distribution dfk. This deviation for the k-th slot can
be given as follows ([6][8][10]):
(15)
Design of the Non-Resonant Waveguide Array Antenna
with 12 Longitudinal Slots Cut in a Broad Waveguide Wall.
The method proposed in this article was used to design
a non-resonant waveguide antenna with 12 longitudinal
slots alternating placed on both sides of a rectangular
waveguide’s broad wall axis (see Fig. 2a). The waveguide
dimensions are as follows: the broad and narrow wall
dimensions: a = 22.86 mm, b = 10.16 mm, thickness of the
wall t = 1.27 mm (WR90 waveguide standard). The Taylor’s
amplitude distribution ([2][3]) of the feeding slots equivalent current with parameters a = 1.5 and n = 8 was chosen.
Values of desirable current amplitudes are shown in column 2 of Tab. 1. For calculations it is assumed: the operation frequency f0 = 9.35GHz, distance between adjacent
slots d = 0.45 l01 = 20.27mm, and the loss coefficient
xN = 0.15 (efficiency coefficient of the antenna equals
h = 85%). Length and width of slots were chosen in that
way to obtain resonant slots (slots’ susceptance equal zero).
For this assumption slots’ length and width equal:
L = 15.35mm, W = 1mm. In Tab. 1 shows the slots’ conductance normalized to the waveguide admittance without
mutual coupling consideration (column 3) and with internal and external mutual coupling between slots. In the last
column of Tab. 1 the phase deviation from the linear distribution of the feeding slots currents d k is also shown.
Fig. 6 shows the normalized radiation patterns
obtained with the proposed design method including
internal and external mutual coupling between slots and
with the Energetic method [3]. In order to confirm the
usefulness of the presented method in Fig.6 the computer
simulation results obtained in CST MICROWAVE
STUDIO are also presented.
In comparing the radiation patterns shown in Fig. 6
we observe differences between results recalculated with
the Energetic Method (mutual coupling not included) and
with the method proposed in this article. These differences are caused by not considering the mutual coupling
between slots in the Energetic Method. The most significant effects of the internal mutual coupling influence on
the radiation pattern are an increase of the first sidelobes
Slot No. Current Amplitude Distribuition
u kIk Slot’s conductance
without mutual
coupling consideration
gk Slot’s conductance
with mutual
coupling consideration
gk
Deviation of
phase angle from
linear distribution
10.30
0.0138
0.0100
-6.51°
20.38
0.0232
0.0157
-11.59°
30.58
0.0550
0.0374
-17.12°
40.77
0.1012
0.0745
-22.13°
50.92
0.1596
0.1345
-25.72°
61.00
0.2260
0.2265
-26.91°
71.00
0.2920
0.3496
-24.74°
80.92
0.3465
0.4612
-18.95°
90.77
0.3739
0.4622
-11.31°
100.58
0.3435
0.3234
-5.07°
110.38
0.2261
0.1528
-1.61°
120.30
0.1765
0.0955
0.00°
Table 1 • Electrical parameters of the designed antenna.
42 High Frequency Electronics
d
k,
[‘]
pair level and the distortion of the main lobe. Radiation
patterns obtained with the Full-Wave Method and in CST
MICROWAVE STUDIO simulations were also compared.
For the first pair of sidelobes the biggest difference was
observed. It is worthwhile to emphasize that results
obtained in computer simulations and reached with the
proposed method are closer in the comparison to results
evaluated with the Energetic Method. In Fig.7 the characteristics of the antenna return loss and loss coefficient
xN (loss in the matched waveguide termination) obtained
with CST MICROWAVE STUDIO
are presented. The loss coefficient
for the operation frequency f0 = 9.35
GHz equals xN = 0.158(–8.015 dB)
and is close to the desirable value
xN = 0.15. The presented simulation
results and results reached with the
proposed method are in a good
agreement. It allows us to draw the
conclusion that the proposed method is correct and can be used in the
design process of non-resonant slotted waveguide antennas.
Conclusions
In this article a design method of
non-resonant slotted waveguide
array antennas including internal
and external mutual coupling
between slots was proposed. This
method allows us to determine the
geometrical dimensions of slots and
their location in the waveguide
(which are crucial for the coupling
between the slot and the feeding
waveguide) dependent on the desirable amplitude distributions of
equivalent currents feeding slots. In
order to confirm its usefulness, the
proposed method was used to design
a non-resonant waveguide antenna
with 12 longitudinal slots alternately
placed on both sides of a rectangular
waveguide’s broad wall axis. As the
desirable choice, the Taylor amplitude distribution of the feeding slots
equivalent currents was chosen.
The correctness of this method
was verified by the results obtained
in calculations and their equivalents reached in computer simulations with CST MICROWAVE
STUDIO. Both patterns were in the
agreement and main differences
were for the level of the first side
lobes. It is worthwhile to emphasize
that these differences were much smaller than the differences between patterns obtained with the Energetic
Method and in the simulations. Strong agreement
between results confirms the usefulness of the proposed
method.
The influence of the external and internal mutual
couplings between slots on the radiation pattern was estimated by the comparison of the radiation patterns
reached in the Energetic Method (couplings not included)
and the proposed method. The obtained patterns were
Get info at www.HFeLink.com
February 2012
43
High Frequency Design
ANTENNA DESIGN
Figure 6 • The normalized radiation pattern of the
designed antenna obtained with the presented method (green line), Energetic Method (blue line) and the
CST MICROWAVE STUDIO simulations (red line).
Figure 7 • The antenna return loss (red line) and loss
coefficient xN characteristics obtained in CST
MICROWAVE STUDIO simulations.
especially different for the side lobe levels and the distortion of the main lobe. Additionally this effect caused an
increase of the end fire angle deviation from the normal
to the antenna aperture.
I would like to sincerely thank Prof. Dr. Stanislaw
Rosloniec for his essential help and for several discussions about the mutual coupling problem existing in nonresonant slotted waveguide array antennas.
Note: CST MICROWAVE STUDIO® is a registered
trademark of CST in North America, the European
Union, and other countries.
References
[1] Ajzenberg G.Z., Jampolskij W.G., Terjoszin O.N.,
“Antenny UKW (t.1 I 2 )”, Svjaz, Moskwa 1977,
[2] Mailloux R.J., “Phased Array Antenna Handbook”,
Artech House, Norwood, 1994,
[3] Rosłoniec S., “Podstawy techniki
antenowej”,
Oficyna
Wydawnicza
Politechniki Warszawskiej, Warszawa
2006,
[4] Dion Andre, “Nonresonant slotted
arrays”, IRE Trans., Antennas and
System and Circuit
Propagation, pp. 360–365, October 1958,
Simulation Software
[5] Elliott R.S., “The design of traveling wave fed longitudinal shunt slot
arrays”, IEEE Trans., vol. 27, Antennas
and Propagation, pp. 717-720, September
1979,
[6] Grabowski M., “Analysis of an
internal mutual couplings influence on a
radiation pattern of a nonresonant mulCheck Web for Latest Specials
tislots waveguide array antenna”,
www.appliedmicrowave.com
Conference Proceedings, MIKON-2008,
Wrocław 2008,
[7] Kaszin A.W., “Mietody projektirowania i issledowania wołnowodno –
szczelewych antennych reszotok”,
Radiotechnika, Moskwa 2006,
[8] Rosłoniec S., “Analiza wpływu
wewnetrznych sprzezen elektromagnetycznych na charakterystyki promieniowania nierezonansowych anten falowodowych”, Prace PIT, Warszawa 2007,
[9] Elliott R.S., L.A. Kurtz, “The
design of small slot antennas”, IEEE
Trans., vol. 28, Antennas and
Propagation, pp. 214 ÷ 219, March 1978,
[10] Grabowski M., “Problem of
To order, contact: www.appliedmicrowave.com
physical non-realizability of some equivalent currents amplitude distributions
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44 High Frequency Electronics
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High Frequency Design
High Power Broadband
ANTENNA DESIGN
RF Amplifiers & Modules
has one of the
largest arrays of high-power,
solid state, broadband amplifiers
in the industry. Our core products
include RF amplifiers from 10kHz
to 18GHz with power levels from
1W to 24 kW.
feeding slots in waveguide antennas”, Microwave Journal,
Technical Library, October 2010,
[11] Orefice M., Elliott R.S., “Design of waveguide-fed series
slot arrays”, IEE Proc., vol. 129, pp. 165-169, August 1982,
[12] Oliner A.A, “The impedance properties of narrow radiating slots in the broad face of rectangular waveguide; part I –
theory”, IRE Trans., Antennas and Propagation, January 1957,
pp. 4-11, “The impedance properties of narrow radiating slots in
the broad face of rectangular waveguide; part II – comparison
with measurement”, IRE Trans. On Antennas and Propagation,
pp. 12–20, January 1957,
[13] Baker H.C., LaGrone A.H., “Digital computation of the
mutual impedance between thin dipoles”, IEEE Trans., vol.
10, Antennas and Propagation, pp. 172-178, January 1962,
[14] Johnson R.C. (editor), Antenna engineering handbook,
third edition McGraw-Hill, Inc. New York 1993.
Military Applications • Scientific Labs • EMC Testing
About the Author:
Michal Grabowski is an Antenna Design Engineer with
Cobham Antenna Systems (Marlow), The Fourth Avenue,
Marlow Buckinghamshire, SL7 1TF, UK. He is a Ph.D. candidate in Electrical Engineering at the Institute of Radioelectronics
Warsaw University of Technology, Nowowiejska st. 15/19,
00-665 Warsaw, Poland.
RF Amplifier Systems
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46 High Frequency Electronics
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DESIGN NOTES & Market Reports
R&D Driving European Market for Signal Generators,
Arbitrary Waveform Generators
The market for signal generators (SGs) and arbitrary
waveform generators (AWGs) in Europe is more developed
and mature than elsewhere in the world, with the region
ranking second globally in terms of revenue.
This is mainly due to the aerospace and defense (A&D)
as well as communications industries in the region, which
are expected to generate moderate growth for the market
going forward.
New analysis from Frost & Sullivan (http://www.testandmeasurement.frost.com), Analysis of the Signal
Generator and Arbitrary Waveform Generator Market,
finds that the European market generated €126.8 million
in 2010 and estimates this to reach €153.9 million in 2017.
The research covers radio frequency (RF) signal generators, microwave signal generators and arbitrary waveform
generators.
Significant R&D and design activity, paralleled by the
continued development of wireless standards, will promote
uptake of SGs and AWGs.
“In the current scenario, the European market is tending to focus heavily on R&D,” explains Frost & Sullivan
Research Analyst Mariano Kimbara. “There are a number
of lucrative market opportunities emerging for high-end
and high-performance test systems.”
The continuous development of wireless standards has
also contributed to the growth of the SG and AWG market
in Europe. The next 10 years will be a ‘wireless decade’,
marked by the launch of different types of wireless devices.
“The rapid development of standards such as wireless
interoperability for microwave access (WiMAX), thirdgeneration (3G) wireless, fourth-generation (4G) wireless,
and wideband code-division multiple access (WCDMA) will
support steady growth in the SG segment,” remarks
Kimbara. “The development of the 60GHz market and new
wireless technologies in the A&D segment will provide
impetus to market expansion.”
Even though SG and AWG technology is mature,
efforts at product enhancement and new product introductions bode well for the future. Several leading players in
the European market are engaged in R&D activity on
high-speed bandwidth, which is boosting user confidence
and creating growth potential.
However, the ongoing uncertainty in the European
market is impacting capital expenditures of end users.
Volatile economic conditions have led end users to reconsider acquiring new test equipment.
“Promisingly, however, the communications and A&D
segments are set to augment growth opportunities not
only in terms of revenues but also in terms of innovation
and product capacities,” concludes Kimbara. “Projects in
the A&D domain requiring high-end signal generators
that were previously suspended are being reconsidered,
signaling continued optimism about market prospects.”
If you are interested in more information on this study,
please send an e-mail with your contact details to Anna Zanchi,
Corporate Communications, at anna.zanchi@frost.com.
MIMO App Note
Agilent Technologies released an application note on
MIMO (multiple-in, multiple-out) technologies and the
basic properties of wireless channels, which goes on to
introduce the concepts of spatial correlation and its effects
on MIMO performance. The note also includes a demonstration of modeling the spatial characteristics of MIMO
channels and describes how these complex channels can be
emulated using commercially available instrumentation
such as the Agilent N5106A PXB baseband generator and
signal emulator. Go to: http://cp.literature.agilent.com/litweb/pdf/5989-8973EN.pdf.
February 2012
47
High Frequency Products
NEW PRODUCTS
Pulsed Power Amp
RFMD’s new RF3928B is a 65V
380W high power discrete amplifier
designed for S-Band pulsed radar,
Air Traffic Control and Surveillance,
and general purpose broadband
amplifier
applications.
The
RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides
thermal stability through the use of
advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the
incorporation of simple, optimized
matching networks external to the
package that provide wideband
gain and power performance in a
single amplifier.
RFMD
rfmd.com
Power Sensors
The new Tektronix PSM3000,
PSM4000, and PSM5000 Series are
compact USB power sensors/meters
that can be used for a broad range
of CW and pulse modulation measurements depending on the model
selected. The meters are delivered
with Microsoft Windows-based
power meter application software
for controlling the meter, displaying
readings and recording data. This
combination provides a complete
48 High Frequency Electronics
test solution, eliminating the need
for a separate meter mainframe.
The sensors feature the industry’s
fastest measurement speed, rated
at 2000 readings per second. This
speed can significantly reduce test
times and provide dynamic power
measurement information that was
previously unavailable. The PSM
Series products are highly versatile
thanks to a wide dynamic range ( –
60 dBm to + 20 dBm) and frequencies ranging from 10 MHz up to
26.5 GHz.
Tektronix
tek.com
rating for moisture and dirt/dust
resistance, making this product
ideal for outdoor applications. The
included pole-mounting hardware
and five-meter long USB 2.0 cable
allows the greatest flexibility in
setup. The transmit power, up to
1W, greatly extends wireless coverage and, when connected to an
802.11n device, it can transmit at
data rates of up to 150 Mbps. An
integral N-female connector allows
a wide array of 2.4 GHz antennas to
be connected.
L-com
l-com.com
Power Amp
The new RWS05020-10 is a GaN on
SiC broadband high power amplifier designed for broadcast, telecom,
medical and other markets. Its
operating frequency range is 20
MHz to 1000 MHz. Gallium Nitride
on SiC technology is used and
attached on an aluminum sub carrier. Full in/out matching for broadband performance is already
applied. Product features: small signal gain 34 dB min.; 20 W typical
P3dB; broadcast; medical equipment; jamming.
RFHIC
rfhic.com
USB Wireless Adapter
L-com, Inc. offers a high-power version of its popular USB wireless
adapter line that is also rated for
outdoor
use.
The
WLANLCUSB2415 connects to a USB port
on a computer or laptop and provides 802.11b/g/n compatible wireless Internet access with an
improved range and data rate.
The new USB wireless adapter is
O-ring sealed, providing an IP67
T&M Cables
MegaPhase is pleased to announce
Private Labeled T&M Cables with
guaranteed pricing, delivery times
and no minimum quantities.
Seamless and confidential branding
opportunities include: Custom jacket color (including specific Pantone
matches); Custom logo and labeling;
Test data on your letterhead;
Customer-supplied serial numbering and part numbering; Custom
packaging and shipping labels for
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The Design Engineers Search Engine finds the model you need, Instantly • For detailed performance specs & shopping online see
U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
498 rev. orig
High Frequency Products
NEW PRODUCTS
manufacturers,” Bill Pote, Founder
& CEO of MegaPhase reported.
“This capability is a great way for
our customers in equipment rental,
‘rack and stack’ integrators, distributors and brand-conscious manufacturers to offer a more complete
product line to their end-users.”
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Clock Generators
Hittite Microwave Corp. launched
two new SMT packaged clock generators, the HMC1032LP6GE and
the HMC1034LP6GE. Ideal for a
wide range of high performance
cellular/4G infrastructure, fiber
optic and networking applications,
these devices deliver best-in-class
jitter and industry-leading phase
noise floor. The HMC1032LP6GE
and the HMC1034LP6GE offer programmable frequency synthesis
from 125 MHz to 3 GHz in both
integer- and fractional-N relationships to their reference clocks. The
HMC1032LP6GE is ideal for clocking DSP, FPGA and high performance processors, and operates
from 125 MHz to 350 MHz, while
the HMC1034LP6GE is designed to
meet the stringent requirements of
high speed data converters and
Physical Layer Devices (PHY), and
operates from 125 MHz to 3 GHz.
The devices integrate high accuracy
PLL and VCO circuits and an
advanced Delta-Sigma Modulator
with 24-bit step range that enables
excellent frequency resolution of 3
Hz and below.
Hittite Microwave Corp.
hittite.com
50 High Frequency Electronics
Surge Stopper
Linear Technology Corporation
introduces the LT4363, an overvoltage protection controller that provides overvoltage and overcurrent
protection to high-availability electronic systems. Supply voltages
surge whenever currents flowing
through long inductive power buses
change abruptly. Also, automotive
batteries experience a condition
known as load-dump, where the
voltage can stay elevated for many
milliseconds. Traditional protection
circuitry relies on bulky inductors,
capacitors, fuses, and transient
voltage suppressors. Instead, the
LT4363 creates a robust, adaptable,
and space-efficient design with simple control of an N-channel
MOSFET. Only the controller and
the MOSFET suffer the high voltage surge; downstream components
can afford lower voltage ratings,
thereby saving costs. The LT4363
extends overvoltage protection
capabilities beyond 100V without
sacrificing overcurrent protection.
Linear Technology Corp.
linear.com
MM-Wave Analyzer
Anritsu Company and OML Inc.
introduced a millimeter-wave solution that features industry-leading
sensitivity and dynamic range, for
spectrum and signal analysis of
emerging wideband communica-
tions systems. The Anritsu
MS2830A Signal Analyzer, when
coupled with the OML MxxHWD
harmonic mixer, offers mm-wave
frequency coverage from 26.5 GHz
to 325 GHz. Using these new capabilities, engineers can evaluate,
characterize and manufacture products designed for emerging wideband standards, such as WiGig,
including FCC Part 15 compliance
emission testing requirements from
40 GHz to 200 GHz. The MS2830A
has an innovative external mixer
design that achieves impressive,
best-in-class
dynamic
range.
Utilizing an intermediate frequency (IF) of 1.875 GHz (IF Output
with 1 GHz bandwidth) and LO
range of 5 GHz to 10 GHz, the
MS2830A can reduce the multiplier
magnitude necessary for mm-wave
coverage.
Anritsu Company
anritsu.com
Power Amp
Avago Technologies announced a
high-gain, high-linearity power
amplifier for high-data-rate applications found in 700 - 800 MHz cellular infrastructure equipment. The
new MGA-43128 amplifier provides
superior signal transmission quality with low power consumption for
LTE AP, CPE, and Picocell equipment and can also serve as a base
station driver amplifier. Designed
for superior signal quality while
transmitting at high data rates, the
MGA-43128 amplifier features low
distortion and high power added
efficiency (PAE) that help reduce
power consumption. RF input is
fully matched while the output
High Frequency Products
NEW PRODUCTS
rately locate PIM outside the
antenna system – the only test
solution that can do so. Distance-toPIM helps eliminate one of the biggest problems facing wireless network deployment and operation.
includes integrated pre-match circuitry for matching and application
simplicity. An integrated bypass
switch controlled attenuator provides up to 18.0 dB attenuation,
and the device also has a temperature-compensated power detector
on chip.
Anritsu Company
anritsu.com
Avago Technologies
avagotech.com
Modular Jack
FCI is expanding its modular jack
product line with multi-port and
single-port RJ45 connectors. The
modular jack is ideal for broadband
switches, hubs, routers, servers and
telecommunication applications.
FCI compared its RJ45 with selective gold plating against traditional
versions with full gold plating and
found no deterioration of the connector’s durability or performance,
providing a clear competitive
advantage. FCI’s RJ45 connectors
are available in 1x1 single- port;
1x2, 1x4, 1x6, 1x8 multi-ports; and
2x1, 2x2, 2x3, 2x4, 2x6, 2x8 stacked
multi-ports versions with shielding
for LED selection. They feature a
simple and flexible design to support Category 3 wiring for the
transmission of 16Mbps signal in
networking and telecommunication
equipment.
FCI
fci.com
Analog Front End
Texas Instruments introduced the
industry’s fastest, highest-performance analog front end (AFE) for
femtocell base stations and portable
software-defined radio (SDR) applications. The low-power, 12-bit
AFE7225 integrates a dual 125MSPS analog-to-digital converter
(ADC) and dual 250-MSPS digitalto-analog converter (DAC). It operates 25-percent faster than the
competition, while increasing the
signal-to-noise ratio (SNR) by 2 dB
and providing up to five times the
DAC output current. In addition to
the AFE7225, the 12-bit AFE7222
is available for lower bandwidth,
power-sensitive applications. It
integrates a dual 65-MSPS ADC
and dual 130-MSPS DAC and uses
only 398 mW in full-duplex or 212
mW in half-duplex receive mode at
full speed.
Texas Instruments
ti.com
Network Troubleshooter
Anritsu Company introduced the
MW8208A PIM Master, an innovative test solution that brings the
inherent advantages of Anritsu’s
patented Distance-to-PIM technology to 850 MHz cellular band applications. Distance-to-PIM helps
make the MW8208A a comprehensive trouble-finding tool that allows
field technicians and engineers to
accurately and quickly locate the
source of passive intermodulation
(PIM), whether it is in the base station antenna system or in the surrounding environment. Users can
uncover the distance and relative
magnitude of all static PIM faults
simultaneously, including those
resulting from dirty connectors, corroded connectors, over-torqued connectors, and microscopic arcing connectors. PIM Master can also accu-
Clock ICs
Silicon Laboratories Inc. announced
the expansion of its PCI Express
(PCIe) clock generator and clock
buffer portfolio, providing the
industry’s broadest range of clocking solutions to address the stringent specifications of the PCIe
Generation 1/2/3 standards. Silicon
Labs’ expanded PCIe timing portfolio includes both off-the-shelf
Si5214x clock generators and
Si5315x clock buffers for powerand cost-sensitive PCIe applications and the Si5335 web-customizable clock generator/buffer for
FPGA- and SoC-based designs
requiring various differential clock
formats that also comply with the
PCIe standard. The PCIe interconnect standard has been widely
adopted in numerous applications
including consumer electronics,
blade servers, storage, embedded
computing, IP gateways and industrial systems. The PCIe interface is
also supported in FPGA and SoC
devices, providing designers with
versatile, high-performance solutions for transferring data within
systems.
Silicon Labs
silabs.com
Power Amp
Aethercomm’s SSPA 2.0-4.0-100 is
a high power, Gallium Nitride
(GaN) amplifier that operates from
2000 MHz to 4000 MHz minimum
and is packaged in a rugged enclosure. This amplifier is designed for
operation in harsh environments.
February 2012
51
High Frequency Products
NEW PRODUCTS
the most applications, custom
designed models are optimized to
meet customers’ specific applications needs.
Sage Millimeter
sagemillimeter.com
Typical output power is 100 watts
across the band at P3dB. Small signal gain is 54 dB ± 3.0 dB across the
band typically. Input and output
VSWR is 2.0:1 maximum. This unit
is equipped with DC switching circuitry that enables and disables the
RF devices inside the amplifier in
540 nSec typical for turn on and
230 nSec typical for turn off time.
Standard features include reverse
polarity protection, output short
and open circuit protection, and
over/under voltage protection.
There is a temperature sensor
internal to this amplifier with thermal shut down to protect the unit.
Aethercomm
aethercomm.com
LNAs
Sage Millimeter’s SBL series low
noise amplifiers are designed and
manufactured by utilizing the most
advanced discrete PHEMT or
MMIC devices and thin film technologies to cover the frequency
range of 2 to 100 GHz. With
improved DC power supply and
advanced semiconductors, these low
noise amplifiers deliver not only
low noise performance, but also
broad operating bandwidth and
gain flatness. The low noise amplifiers are divided into two categories: catalog and custom designed.
While catalog models focus on
broader bandwidth operation for
52 High Frequency Electronics
High-Power Supplies
Agilent Technologies Inc. introduced seven high-power modules
for its popular N6700 modular
power system. The new modules
expand the ability of test-system
integrators and R&D engineers to
deliver multiple channels of high
power (up to 500 watts) to devices
under test. With the addition of the
new modules, engineers and integrators can now choose from a total
of 34 modules for the N6700 MPS.
This breadth of choices gives engineers and integrators in the aerospace/defense, consumer electronics, computers and peripherals,
communications, semiconductor,
and automotive industries the flexibility to optimize performance,
power and price to meet test needs.
Together with the 27 modules
already offered, the new models
comprise a family ranging in power
from 18 W to 500 W at four different
performance levels: basic, high performance, precision, and source/
measure unit.
Agilent Technologies
agilent.com
Op Amp
Touchstone Semiconductor, Inc.,
announced its TS1001 single-supply, rail-to-rail operational amplifier for low-power, low-frequency sensor applications. The TS1001 op
amp offers the industry’s lowest
current consumption of 600nA and
guaranteed supply voltage operation to 0.8V. The TS1001’s features
make it an excellent choice for any
sensor application where very low
supply current and low operating
supply voltage translate into a long
equipment operating time. This
includes wireless remote sensors,
and portable/handheld sensors. The
TS1001 is fully specified to operate
on a single-supply voltage range
from 0.65V to 2.5V, with a supply
current of 600nA. It exhibits a typical offset voltage of 0.5mV, a typical
input bias current of 25pA and railto-rail input and output stages.
Touchstone Semiconductor
touchstonesemi.com
Regulators
Analog Devices, Inc. is continuing to
help industrial, medical and communications equipment designers
improve power system performance
by reducing board space with the
introduction today of the ADP5041
and ADP5040 multi-output regulators. The regulators meet the
increasing demand for greater power
density by combining a high-efficiency, 3-MHz, 1.2-A buck regulator
and two 300-mA LDOs (low dropout
regulators) in a small 20-lead
LFCSP package.
Analog Devices, Inc.
analog.com
Product Highlight
Broadband Amp
Optimization Software
GVA-62+ (RoHS compliant) is an wideband amplifier
fabricated using HBT technology and offering ultra flat
gain over a broad frequency range and with high IP3. In
addition, the GVA-62+, has good input and output return
loss over a broad frequency range without the need for
external matching components and has demonstrated
excellent reliability. Lead finish is SnAgNi. It has repeatable performance from lot to lot and is enclosed in a SOT89 package for very good thermal performance.
Features: .01 to 6 GHz; Ultra Flat Gain; Broadband
High Dynamic Range without external Matching
Components; May be used as a replacement to RFMD
SBB4089Za,b.
Optenni Ltd. announced a new version of the Optenni
Lab matching circuit optimization and antenna analysis
software featuring an easy-to-use component library of
inductors and capacitors from major component manufacturers and a fast tolerance analysis. Optenni Lab
provides fully automatic matching circuit generation and
optimization routines. The user only needs to specify the
desired frequency ranges and number of components in
the matching circuit after which Optenni Lab provides
multiple optimized matching circuit topologies. In the
latest Optenni Lab release an intuitive component
library has been fully integrated into the optimization
process.
Mini-Circuits
minicircuits.com
Optenni Ltd.
optenni.com
Surface Mount Limiter
The RLM-23-1WL+ protects against damage from
unwanted signals over a wide frequency range, 100 to
2500 MHz, at up to 1W power. Construction is on a micro
strip low loss dielectric material and cased into a high
volume, low cost package for cost efficiencies. Measuring
0.5 x 0.5 x 0.18” high, these tiny units provide excellent
protection for IF circuits in satellite receivers, or low
noise amplifiers in hostile environments where unwanted signals prevail, such as in manufacturing sites, train
tunnels, etc. Features: High CW input power, 1 W; Very
low limiter output power, ≤0 dBm typ.; Very fast response
time, 2 nsec.
Mini-Circuits
minicircuits.com
February 2012
53
Product Highlight
Test Set Upgrade
General Purpose Amp
Aeroflex Incorporated announced a major feature
upgrade to its market-leading 3920 Radio Test Set. The
3920 now supports P25 Phase II TDMA test functions and
adds many new features for the development, manufacturing, and field test of both analog and digital PMR
radios and base stations used around the world. The 3920
Radio Test Set is the de facto world leader for testing
PMR communications systems. Its modularity offers
users the ability to test virtually all PMR analog and
digital radio standards within one single test system.
Using Aeroflex Auto-Test II scripts, the 3920 also supports automated testing and alignment of TETRA, P25,
DMR, dPMR, NXDN™, as well as many analog legacy
radio systems.
Crystek expanded its product portfolio with the release of
the RedBoxÒ Amplifier. The model CRBAMP-100-6000 is
a low-noise general purpose connectorized amplifier covering a frequency range of 100MHz to 6GHz. The amplifier is housed in a custom aluminum enclosure (1.25” x
1.25” x 0.59”) with three SMA connectors for both input
and output as well as the power supply input. The unit
operates from a single +5V supply consuming only 60mA.
This broadband, low-noise amplifier has a small signal
gain of 18dB with an output power of 17dBm (P1dB). It
features a typical noise figure of 3.5dB with an IP3 of
+30dBm. The CRBAMP-100-6000 is ideal for use in applications such as IF or RF buffer amplifiers, base stations,
high-reliability applications and general lab use for inhouse testing.
Aeroflex Inc.
aeroflex.com
Crystek
crystek.com
Digital Oscilloscope
Rigol Technologies introduced the DS4000 series digital oscilloscope, a fast and versatile general purpose test
instrument perfect for a wide range of applications.
Available in 8 different models, the DS4000 series features bandwidths between 100MHz and 500MHz, sample
rates up to 4GSa/s and 2 or 4 analog channels. Rigol’s
DS4000 series digital oscilloscope incorporates many
advanced technologies and processes to make detecting
signal and device characteristics easier than ever. These
scopes can help find system glitches with 140 million
points of memory depth and 110,000 waveforms per sec54
54 High
High Frequency
Frequency Electronics
Electronics
ond acquisition rate. In addition they can search and
navigate within up to 200,000 triggered waveforms with
mask tests. DS4000 digital oscilloscopes feature Rigol’s
innovative UltraVision technology and a 9 inch WVGA
display to offer an intensity grading display and real-time
waveform recording and waveform visualization and
replay, with customizable real-time hardware filters
available.
Rigol Technologies
rigolna.com
Product Showcase
30
Years
Advanced
Switch
Technology
754 Fortune Cr, Kingston, ON
K7P 2T3, Canada.
613 384 3939
info@astswitch.com
Our line of Waveguide, Coaxial and Dual Switches are the most
reliable in the industry, but don’t just take our word for it. Join
the hundreds of satisfied customers who use our switches every
day.
When only the best will do
HFE’s Product
Showcase
Fast Pulse Test Solutions from AVTECH
Avtech offers over 500 standard models of high-speed
pulse generators, function generators, and amplifiers
ideal for both R&D and automated factory-floor testing.
AVR-CD1-B Reverse Recovery Test System
Your ad will stand out when
it’s displayed in our Product
Showcase!
For more information, or
to place your ad, please
contact:
Joanne Frangides
Tel: 201-666-6698
Fax: 201-666-6698
joanne@highfrequencyelectronics.com
Typical Output Waveform
2 A/div, 40 ns/div
Some of our standard models:
AVR-EB4-B:
AV-156F-B:
AVO-9A-B:
AV-151J-B:
AVOZ-D2-B:
AVR-DV1-B:
+2A / -4A pulser for diode reverse-recovery time tests
+10 Amp constant current pulser for airbag initiator tests
200 mA, 200 ps rise time driver for pulsed laser diode tests
±400 V, 50 kHz function generator for piezoelectric tests
700 V, 70 A pulser for production testing of attenuators
1000 V, variable rise-time pulser for phototriac dV/dt tests
Pricing, manuals, datasheets: www.avtechpulse.com
Avtech electrosystems ltd. | Tel: 888-670-8729
PO Box 265 Ogdensburg, NY 13669 | Fax: 800-561-1970
www.highfrequencyelectronics.com
E-mail us at: info@
avtechpulse.com
Product Highlight
Surface Mount Terminations
Precision Adapters
The excellent heat dissipative properties of CVD diamond substrates allow high power terminations and
resistors in very small packages. The CT0402D is a 10W
termination packaged on a standard 0402 size diamond
substrate. Operating frequencies are from DC to 8GHz.
CVD diamond thermal conductivities are about 3-4 times
that of copper at 1000-1800 W/m-K and far beyond
Beryllia and Aluminum Nitride making them ideal for
high reliability and space applications or where printed
circuit space is at a premium. RFMW supports the EMC
Technology diamond substrate products as well as BeO
and AlN devices.
2.4mm In-Series bulkhead feed-through precision
adapters are available in male to male, male to female
and female to female configurations with .438 inch diameter D-hole mount and in female to female for .252 inch
D-hole for immediate delivery. Manufactured with 303
passivated stainless steel bodies and gold plated beryllium copper center conductors these adapters offer performance from DC to 50 GHz. SGMC Microwave offers a
wide variety of in-series and between series precision
adapters in multiple configurations offering low VSWR,
captivated center contact, and rugged construction for
reliability and repeatability.
RFMW
rfmw.com
SGMC Microwave
sgmcmicrowave.com
PCB Design Software
Simberian announced the 2012 release of its Simbeor
software. The new release offers new capabilities that
further increase productivity of signal integrity engineers. Simbeor 2012 is the most cost-effective and comprehensive solution for physical design of PCB and packaging interconnects operating at 6-100 Gb/s and beyond.
Features in Simbeor 2012 software now include: Geometry
import from ODB++ files to fit Simbeor into any design
flow; New Via Analyzer™ tool to synthesize geometry for
transparent via-holes and connector launches; New multivariable optimization capability in SiTune™ tool for
geometry optimization and identification of dielectric and
conductor roughness models; Anisotropic dielectric model
for accurate analysis of via-holes; Huray snowball and
modified Hammerstad conductor roughness models for
accurate analysis of PCB and packaging traces; Automatic
computation, plotting and output of 9 common serial
interconnects compliance metrics. “What’s new” includes:
Pre- and post- layout analysis with advanced 3D fullwave models; S-parameter models quality assurance and
improvement with Touchstone Analyzer™ tool; Material
parameters identification with new optimization capability in SiTune™ tool.
Z-Communications, Inc. announced a new RoHS compliant Voltage Controlled Oscillator model USSP2350-LF
for mobile communication system applications where low
power consumption and small package size are critical.
The USSP2350-LF covers the frequency range of 23002400 MHz in 0.5 to 3.0V of tuning voltage. This high
performance VCO comes available in a compact surface
mount package measuring 0.2” x 0.2” x 0.04” while operating off 2.7V and drawing only 6mA, typically. The
USSP2350-LF provides a spectral purity of -82dBc/Hz,
typically, at 10kHz from the carrier and is designed to
operate over the commercial temperature range of -20 to
70°C.
Simberian
simberian.com
Z-Communications
zcomm.com
56 High Frequency Electronics
VCO
Product Highlight
IR-Drop Solver
LNAs
The new CST PCBS IR-drop solver allows the quick
calculation of the current distribution and voltage drop on
multilayered PCBs and packages. DC analysis for off-chip
power delivery systems is mandatory for high-current,
low-voltage designs and the new IR-drop simulation helps
SI/PI engineers to perform the adjustment of Voltage
Regulator Modules (VRM) nominal output, strategic
placement of lines and the early identification of problematic potential distributions. Budgeting for AC noise and
system-level IR drop enables the optimization of voltage
margins for every device of the PCB.
Skyworks Solutions has introduced three low-noise
and high-linearity LNAs for 1.6 – 3.0 GHz receiver applications. The SKY67002-396LF, SKY67003-396LF and
SKY67102-396LF are single-stage, GaAs pHEMT LNAs
that offer ultra low noise figure, high linearity and excellent return loss in a small QFN package. On-die active
bias design ensures consistent performance and enables
unconditional stability. These LNAs are designed for
wireless infrastructure OEMs who require high-performance, cost-effective solutions.
CST
cst.com
Skyworks Solutions
skyworksinc.com
PLLs
The HMC833LP6GE is a low noise, wide band,
Fractional-N Phase-Locked-Loop (PLL) that features an
integrated Voltage Controlled Oscillator (VCO) with a
fundamental frequency of 1500 MHz - 3000 MHz, and an
integrated VCO Output Divider (divide by 1/2/4/6.../60/62)
and doubler. These features allow it to generate frequencies from 25 MHz to 6000 MHz. The HMC834LP6GE is a
low noise, wide band, Fractional-N Phase-Locked-Loop
(PLL) that features an integrated Voltage Controlled
Oscillator (VCO) with a fundamental frequency of 2800
MHz - 4200 MHz, and an integrated VCO Output Divider
(divide by 1/2/4/6.../60/62) and doubler, that together
allow the HMC834LP6GE to generate frequencies from
45 MHz to 1050 MHz, from 1400 MHz to 2100 MHz, from
2800 MHz to 4200 MHz, and from 5600 MHz to 8400
MHz. The HMC1060LP3E is a BiCMOS ultra low noise
quad-output linear voltage regulator targeted at high
performance applications requiring superb power supply
isolation. It is ideal for use with Hittite’s Wideband PLL
with Integrated VCO products, such as the HMC833LP6GE
and the HMC834LP6GE.
Hittite Microwave Corp.
hittite.com
February 2012
57
www.highfrequencyelectronics.com
High Frequency Electronics magazine
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PUBLISHER — OTHER REGIONS & INTERNATIONAL
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Tel: 707-544-9977, Fax: 707-544-9375
tim@highfrequencyelectronics.com
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Tel: 603-472-8261, Fax: 603-471-0716
scott@highfrequencyelectronics.com
Learn RF Anywhere.
Besser Associates
Web Classroom
SM
Enjoy the benefits of RF training via
web conferencing:
• No travel expenses
• Shorter sessions - only 90 minutes each day
• Keep up with your projects, meetings, etc.
• Live sessions - interact with instructor
• Instructor can adapt presentation based on student
feedback
Here’s how it works:
• Log-in to the web conference at the start of each session - you can even use your smartphone or tablet!
• Follow along and take notes - PDF manual included
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and other applications from their computer
• Ask questions via the chat window at any time, or
email between sessions
Enjoy the benefits of live, classroom training - with no
travel expense and minimal disruption to your schedule.
Upcoming Web Classroom Courses:
• GaN Power Amplifier Design March 12-16,2012
• RF Fundamentals
June 25-29,2012
GaN Power Amplifier
Design - New Course!
March 12-16, 2012 - Just 90 minutes per day!
Outline:
GaN Semiconductor and GaN HEMT PA Capabilities:
• GaN semiconductor properties • GaN HEMT
transistors • geometries • semiconductor processes
• breakdown voltages • thermal resistance • power
capability • reliability • thermal management
techniques • gain • efficiency • frequency performance
GaN FET PA Devices and Models:
• Existing discrete GaN HEMT vendors • devices
• MMIC sources • comparison of MMIC devices and
performance • MMIC matching and biasing elements •
nonlinear GaN HEMT models
GaN FET PA Design Considerations:
• Constant amplitude envelope design (GSM)
considerations • non-constant amplitude envelop
(EDGE, CDMA, WCDMS, WIMAX, LTE) design
considerations and solutions
GaN FET PA Design Examples:
• Step-by-step PA design for various classes of
operation as well as the popular Doherty amplifier
using the latest nonlinear CAD circuit programs
Phone: 1-650-949-3300 Fax: 1-650-949-4400 www.besserassociates.com
2012
EDITORIAL CALENDAR
March
n D
efense and Homeland Security
n Mixers/Modulators
n EDA
Products: MW Components, Amplifiers,
Switches
Products: RFICs, MMICs, Field Test,
Couplers and Hybrids
Bonus Distribution: WAMICON, April
16-17
Bonus Distribution: CTIA, May 8-10
May
n Signal Generation
n MM-Wave
n IMS Preview
June
n Radar and Avionics
n Antennas
n EMI/EMC
Products: 3G, 4G, Substrates and
Laminates, Power Products
Products: Antennas, Front-End
Components, Defense/Homeland
Security
Bonus Distribution: MTT IMS, June 17-22
August
n High Speed Digital
n VCOs & Synthesizers
n Wireless ICs
Products: Telecom, Filters, EMC Products
Products: Switches, Synthesizers, EDA,
Power Amps
September
n G
overnment and Military Electronics
n S
imulation and Layout Software
n COTS Components
Products: Modules, ICs, Filters
Bonus Distribution: EuMW Week, Oct
29-Nov 2 MILCOM, Oct 29-Nov 1
Bonus Distribution: AOC International,
Sept 23-26
October
n Aerospace
n Cables and Connectors
n ICs & Devices
Products: Design Software, Space
Products, Amplifiers
November
n M
icrowave and Power Modules
n MM-Wave
n Signal Generation
December
n Communications
n Mixers and Amps
n S
ubsystems and Systems – Power
Products: MM-Wave, Passives, Test and
Measurement
Bonus Distribution: Asia Pacific
Microwave
Conference, Dec 4-7
Products: RFICs & MMICs, Signal
Generation, Software
Press Releases
Get info at www.HFeLink.com
Bonus Distribution: AP/URSI, July 8-14
July
n High Power
n Cables and Connectors
n Sensors
Bonus Distribution: IEEE EMC
Symposium, Aug 5-9
60 High Frequency Electronics
April
Passive Components
n Cables and Connectors
n Field Test
n
Press releases for our informational columns
should be sent by the first of the month prior to
the desired publication date (e.g., April 1 for
the May issue). Late-breaking news can be
accommodated, but please advise the editors
of urgent items by telephone or e-mail.
tim@highfrequencyelectronics.com
Bonus Distribution: Radio Wireless Week,
Jan 15-18
Article Contributions
We encourage the submission of technical articles, application notes and other editorial contributions. These may be on the topics noted
above, or any other subject of current interest.
Contact us with article ideas:
tim@highfrequencyelectronics.com
IMS2012: Microwaves without Borders
About the conference:
Description : Chinese Garden at the Montréal Botanical Garden
Credit : © Montréal Botanical Garden, Michel Tremblay
Botanical Garden
The IEEE Microwave Theory and Techniques Society's 2012
International Microwave Symposium (IMS2012) will be held on 17-22
June in Montréal, Canada as the centerpiece of Microwave Week.
IMS2012 offers technical sessions, interactive forums, plenary and
panel sessions, workshops, short courses, industrial exhibits,
application seminars, historical exhibits, and a wide array of other
technical and social activities including a guest program. Colocated
with IMS2012 are the RFIC symposium (www.rfic2012.org) and the
ARFTG conference (www.arftg.org), which comprise the Microwave
Week 2012 technical program. With over 9,000 attendees and over
800 industrial exhibits of the latest state-of-the-art microwave
products, Microwave Week is the world’s largest gathering of Radio
Frequency (RF) and microwave professionals and the most
important forum for the latest and most advanced research in the
area.
For more information visit http://ims2012.mtt.org
Description : Biosphère, Environment Museum
Credit : © Tourisme Montréal
Biosphère, Environment Museum
IMS2012 exhibit space is
available for reservation.
Description : Montréal International Jazz Festival
Credit : © Festival International de Jazz de Montréal, Jean-François Leblanc
To book a space or for information contact:
Richard D. Knight, Sales Manager
Telephone: 303-530-4562 ext. 130
Email: Rich@mpassociates.com
Montréal International Jazz Festival
http://ims2012.mtt.org
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U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
451 Rev J
Advertiser Index
Company........................................................................... Page
Advanced Switch Technology........................................................... 55
Aethercomm........................................................................................ 23
Agilent Technologies............................................................................. 4
Applied Computational Sciences..................................................... 44
Avtech................................................................................................... 55
AWR....................................................................................................... 19
Besser Associates................................................................................. 59
Cernex................................................................................................... 60
Coilcraft................................................................................................. 11
C.W. Swift & Associates....................................................................... C2
C.W. Swift/SGMC.................................................................................. 25
Dudley Lab........................................................................................... 55
Emerson Network Power.................................................................... C4
Emerson Network Power..................................................................... 29
EM Research......................................................................................... 31
IMS 2012................................................................................................ 61
JFW Industries........................................................................................ 30
J microTechnology............................................................................... 20
J microTechnology............................................................................... 20
J microTechnology............................................................................... 20
Krytar..................................................................................................... 22
Linear Technology................................................................................ 13
Linear Technology................................................................................ 15
Micro Lambda Wireless....................................................................... 17
Microwave Components.................................................................... 39
Mini-Circuits............................................................................................. 2
Mini-Circuits............................................................................................. 3
Mini-Circuits........................................................................................... 27
Mini-Circuits........................................................................................... 33
Mini-Circuits........................................................................................... 41
Mini-Circuits........................................................................................... 49
Mini-Circuits........................................................................................... 62
Mini-Circuits........................................................................................... 63
Miteq....................................................................................................... 1
Molex.................................................................................................... C3
Ophir RF................................................................................................. 46
Relcomm Technologies....................................................................... 37
RLC Electronics....................................................................................... 9
Satellink................................................................................................. 55
Sector Microwave................................................................................ 55
SGMC Microwave................................................................................ 45
State of the Art..................................................................................... 43
SW Tech Equipment............................................................................. 46
Teledyne Cougar................................................................................... 7
Valpey Fisher......................................................................................... 35
VidaRF................................................................................................... 21
Wenteq Microwave............................................................................. 55
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