Ordering number : ENA1477
ON Semiconductor
DATA SHEET
N-Channel Silicon MOSFET
EFC4612R
General-Purpose Switching Device
Applications
Features
•
•
•
•
2.5V drive.
Built-in gate protection resistor.
Best suited for LiB charging and discharging switch.
Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Symbol
Conditions
Ratings
VSSS
VGSS
IS
ISP
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
24
V
±12
V
6
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (5000mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
Source-to-Source Breakdown Voltage
V(BR)SSS
ISSS
IS=1mA, VGS=0V
VSS=20V, VGS=0V
Test Circuit 1
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VSS=0V
Test Circuit 2
Cutoff Voltage
VGS(off)
Test Circuit 3
Forward Transfer Admittance
| yfs |
VSS=10V, IS=1mA
VSS=10V, IS=3A
Marking : FN
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
typ
24
V
Test Circuit 1
Test Circuit 4
Unit
max
0.5
1
μA
±10
μA
1.3
3.1
V
S
Continued on next page.
www.onsemi.com
Publication Order Number:
EFC4612R/D
EFC4612R
Continued from preceding page.
Parameter
Symbol
RSS(on)1
Ratings
Conditions
min
typ
max
Unit
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
Test Circuit 5
24
39
45
mΩ
RSS(on)2
Test Circuit 5
25
41
48
mΩ
RSS(on)3
IS=3A, VGS=3.7V
Test Circuit 5
27.5
43
50
mΩ
RSS(on)4
IS=3A, VGS=3.1V
Test Circuit 5
31.5
48
57
mΩ
RSS(on)5
IS=3A, VGS=2.5V
Test Circuit 5
33.5
58
72
mΩ
Turn-ON Delay Time
td(on)
See specified Test Circuit.
Test Circuit 7
20
ns
Rise Time
tr
See specified Test Circuit.
Test Circuit 7
230
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
Test Circuit 7
130
ns
Fall Time
tf
See specified Test Circuit.
Test Circuit 7
210
ns
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A
7
nC
Forward Source-to-Source Voltage
VF(S-S)
IS=3A, VGS=0V
Static Source-to-Source On-State Resistance
Package Dimensions
0.8
Test Circuit 6
1.2
V
Electrical Connection
unit : mm (typ)
7064-001
1
1.26
4
3
Rg
1.26
2
Rg
2
3
0.15
0.22
1
Rg=200Ω
0.65
2
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
0.65
1
4
3
0.3
SANYO : EFCP1313-4CC-037
Rev. 0 | Page 2 of 5 | www.onsemi.com
4
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
EFC4612R
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
Test Circuit 2
IGSS(+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
IT11565
Test Circuit 3
VGS(off)
IT11566
Test Circuit 4
| yfs |
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
IT11567
Test Circuit 5
RSS(on)
IT11568
Test Circuit 6
VF(S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
Test Circuit 7
td(on), tr, td(off), tf
VDD=10V
IS=3A
RL=3.33Ω
V
S2 OUT
VIN
G2
PW=10μs
D.C.≤1%
G1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Rev. 0 | Page 3 of 5 | www.onsemi.com
EFC4612R
IS -- VSS
VSS=10V
5
3.5
V SS=1.5V
3.0
2.5
2.0
1.5
4
3
2
1
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Source-to-Source Voltage, VSS -- V
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
100
80
60
40
20
0
2
4
6
8
IS -- VF(S-S)
0.01
0
0.2
0.4
0.6
0.8
1.0
Forward Source-to-Source Voltage, VF(S-S) -- V
VGS -- Qg
2.5
2.0
1.5
1.0
0.5
1
2
3
4
3A
.0V, I S=
V GS=4
--40 --20
0
20
40
5
6
Total Gate Charge, Qg -- nC
7
60
80
100
120
140
5
160
IT14683
SW Time -- IS
VSS=10V
VGS=4.5V
3
td(off)
2
tf
100
7
tr
5
3
td(on)
2
2
3
5 7 0.1
2
3
2
5 7 1.0
3
100
7
5
3
2
10
7
5
3
2
ISP=60A
PW≤10μs
10
0μ
s
1m
s
IS=6A
1.0
7
5
3
2
0.1
7
5
3
2
5 7 10
IT14685
ASO
2
3.0
0
20
Source Current, IS -- A
3.5
0
40
IT14684
VSS=10V
IS=6A
4.0
60
10
0.01
1.2
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
4.5
=3A
V, I S
=2.5
=3A
S
VG
V, I S
=3.1
VGS
A
, I S=3
=4.5V
VGS
Ambient Temperature, Ta -- °C
Switching Time, SW Time -- ns
Ta=7
5°C
25°C
--25°C
Source Current, IS -- A
3
2
3
2
=3.7
VGS
80
7
1.0
7
5
2.0
IT14681
=3A
V, I S
100
1000
3
2
1.5
120
IT14682
VGS=0V
0.1
7
5
1.0
RSS(on) -- Ta
0
--60
10
Gate-to-Source Voltage, VGS -- V
10
7
5
0.5
Gate-to-Source Voltage, VGS -- V
140
Ta=25°C
IS=3A
120
0
0
IT14720
RSS(on) -- VGS
140
0
2.0
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
0
25°C --25°C
4.0
Ta=7
5°C
4.5
Source Current, IS -- A
Source Current, IS -- A
5.0
4.0V 3.1V
5.5
IS -- VGS
6
2.5V
10.0V 4.5V
6.0
10
ms
1
DC 00m
op s
era
tio
n
Operation in this area
is limited by RSS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
IT14686
Rev. 0 | Page 4 of 5 | www.onsemi.com
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Source-to-Source Voltage, VSS -- V
2 3
5
IT14721
EFC4612R
PT -- Ta
1.8
When mounted on ceramic substrate
(5000mm2×0.8mm)
Total Dissipation, PT -- W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14722
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EFC4612R/D