PRELIMINARY CID150660–Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode IC= 15 A, Zero Recovery® Rectifier Features • • • • • • • Tsc TO-220-3 2 Benchmark Efficiency for Motor Control Rugged Transient Performance Extremely Low EMI Excellent Current Sharing In Parallel Operation 1 3 Applications • >10 µs, TJ=150˚C Benefits • • • • TC=100˚C VCE(on) Typ. = 1.8 V Package Zero Reverse Recovery Diode Greatly Reduced Switching Loss Low VCE (on) Non Punch Through IGBT 10-µs Short Circuit Capability Square RBSOA Positive VCE (on)Temperature Coefficient Conforms to Current EU RoHS Directive VCES = 600 V Motor Drives - Typical Power: 2HP-3HP Part Number Package Marking CID150660B TO-220-3 CID150660 Maximum Ratings A D150660 Rev. Datasheet: CI Symbol Parameter Value Unit Test Conditions VCES Collector-to-Emitter Voltage 600 V IC Continuous Collector Current 31 15 A ICM Pulsed Collector Current 62 A ILM Clamped Inductive Load Current 62 A IF Diode Continuous Forward Current 19 13 A TC=25˚C TC=100˚C TC=25˚C tP=10 µS, pulse IFSM Non-Repetitive Peak Forward Surge Current 210 A VGE Gate-to-Emitter Voltage ±20 V Ptot Power Dissipation 208 83 W -55 to +150 ˚C TJ, Tstg Operating Junction and Storage Temperature Subject to change without notice. www.cree.com/power Fig. TC=25˚C TC=100˚C TC=25˚C TC=100˚C PRELIMINARY Electrical Characteristics @ TJ =25°C (unless otherwise specified) Symbol Parameter V(BR)CES ∆V(BR)CES/∆TJ Typ. Max. Unit Collector-to-Emitter Breakdown Voltage 600 V Temperature Coeff. of Breakdown Voltage 0.3 V/°C Test Conditions VGE = 0 V, IC=500 µA VGE = 0 V, IC= 1.0 mA, (25°C150°C) 1.80 2.05 2.10 2.20 2.50 2.60 V IC = 15 A, VGE =15 V IC = 15 A, VGE =15 V IC = 15 A, VGE =15 V Gate Threshold Voltage 4.5 5.5 V VCE = VGE, IC = 250 µA Temperature Coeff. of Threshold Voltage -10 mV/°C gfe Forward Transconductance 10.6 S ICES Zero Gate Voltage Collector Current 5.0 500 VFM Diode Forward Voltage Drop 2.5 3.25 IGES Gate-to-Emitter Leakage Current VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ 150 1000 µA V Fig. TJ = 125°C TJ = 150°C 5,6,7 10,11 12 10,11 12,13 VCE = VGE, IC = 1.0 mA, (25°C150°C) VCE = 50 V, IC, = 20 A, PW=80 µs VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C IC = 15 A IC = 15 A, TJ = 150°C ±100 nA Typ. Max. Unit 0.6 °C/W 8 VGE = ±20 V Thermal Characteristics Symbol Parameter RθJC Thermal Resistance from Junction to Case-IGBT RθJC Thermal Resistance from Junction to Case-Diode 1.8 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.5 °C/W RθJA Junction-to-Ambient, Typical Socket Mount 62 °C/W RθJA Junction-to-Ambient (PCB Mount, Steady State) 40 °C/W Wt Weight 1.44 g Test Conditions Fig. Test Conditions Fig. Switching Characteristics @ TJ =25°C (unless otherwise specified) Symbol Parameter Typ. Max. Unit Qg Total Gate Charge (Turn-On) 56 84 nC Qge Gate - Emitter Charge (Turn-On) 7.0 10 nC Qgc Gate - Collector Charge (Turn-On) 26 39 nC Eon Turn-On Switching Loss 85 µJ Eoff Turn-Off Switching Loss 420 µJ Etot Total Switching Loss 505 µJ CID150660 Rev. A IC = 15 A Vcc = 400 V VGE = 15 V CT1 IC = 15 A, VCC =400 V VGE = 15 V, RG = 22 Ω L = 200 µH, Ls = 150 nH TJ = 25°C CT4 PRELIMINARY Switching Characteristics @ TJ = 25°C (unless otherwise specified) continued . . . Symbol td(on) tr td(off) tf Eon Typ. Max. Unit Turn-On Delay Time 34 ns Rise Time 22 ns Turn-Off Delay Time 160 ns Fall Time 122 ns 90 µJ Turn-On Switching Loss Eoff Turn-Off Switching Loss 570 µJ Etot Total Switching Loss 660 µJ td(on) Turn-On Delay Time 34 ns Rise Time 28 ns Turn-Off Delay Time 165 ns Fall Time 232 ns Cies Input Capacitance 850 pF Coes Output Capacitance 75 pF Cres Reverse Transfer Capacitance 35 pF tr td(off) tf RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 10 µs Reverse Recovery Energy of the Diode 20 µJ trr Diode Reverse Recovery Time 30 ns Irr Diode Peak Reverse Recovery Current 1 A Erec Parameter CID150660 Rev. A FULL SQUARE Test Conditions Fig. IC = 15 A, VCC =400 V VGE = 15 V, RG = 22 Ω CT4 L = 200 µH, Ls = 150 nH TJ = 25°C IC = 15 A, VCC =400 V VGE = 15 V, RG = 22 Ω L = 200 µH, Ls = 150 nH TJ = 150°C IC = 15 A, VCC =400 V VGE = 15 V, RG = 22 Ω L = 200 µH, Ls = 150 nH TJ = 150°C CT4 14,16 WF1 WF2 CT4 15,17 WF1 WF2 VGE = 0 V VCC =30 V f = 1.0 MHz TJ = 150°C, IC = 62 A, Vp = 600 V VCC = 500 V, VGE = +15 to 0 V RG = 22 Ω 4 CT2 TJ = 150°C, Vp = 600 V, RG = 22 Ω VCC = 360 V, VGE = +15 to 0 V CT3 WF4 TJ = 150°C IF = 15 A, VCC =400 V VGE = 15 V, RG = 22 Ω L = 200 µH, Ls = 150 nH CT4 WF3 PRELIMINARY Typical Performance IRGB/S/SL15B60KDPbF 35 240 30 200 25 160 Ptot (W) IC (A) 20 15 80 10 � 40 5 0 120 0 20 40 60 80 0 100 120 140 160 0 T C (°C) 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current Fig. 2 - Power Dissipation vs. Case DCTemperature Collector Current vs. Fig. 2 - Power Dissipation vs. Case Fig. 1 - Maximum vs. Case Temperature Case Temperature Temperature 100 100 10 µs 100 µs 1 DC 0.1 10 IC A) IC (A) 10 1 10 100 1 1ms 1000 0 10000 10 VCE (V) Fig. 3 - Forward SOA Fig.TC3=25 - Forward °C; TJ ≤SOA 150°C TC = 25°C; TJ d 150°C www.irf.com CID150660 Rev. A 100 1000 VCE (V) Fig. 4 - Reverse Bias SOA Fig. 4TJ-=150 Reverse Bias °C; VGE =15 SOA V TJ = 150°C; VGE =15V 3 PRELIMINARY Typical Performance IRGB/S/SL15B60KDPbF 100 100 90 VGE VGE VGE VGE VGE 80 60 90 70 50 40 60 40 30 20 20 10 10 0 1 2 3 4 5 0 6 = 18V = 15V = 12V = 10V = 8.0V 50 30 0 VGE VGE VGE VGE VGE 80 ICE (A) ICE (A) 70 = 18V = 15V = 12V = 10V = 8.0V 0 1 2 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ=-40 °C;Output tp=300Characteristics μs Fig. 5 - Typ. IGBT 3 4 5 6 VCE (V) TJ = -40°C; tp = 300µs Fig. 6 - Typ. IGBT Output Characteristics TJ=25 °C; tp=300 μs Fig. 6 - Typ. IGBT Output Characteristics 12 11 TJ = 25°C; tp = 300µs 10 9 8 12 60 100 90 VGE VGE VGE VGE VGE 80 60 50 10 = 15V = 12V = 10V = 8.0V 9 50 40 125°C 175°C 7 1 306 0 5 102 10 1 0 1 2 3 4 5 6 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics Fig. 7 - Typ. T =150Output °C; tp=300 μs IGBT Characteristics J 4 3 3 20 4 -40°C 25°C 25°C 150°C 75°C 204 30 0 6 5 408 2 IF (A) ICE (A) 70 11 = 18V 7 TJ = 150°C; tp = 300µs CID150660 Rev. A 00 0.0 0.0 0.5 0.5 1.01.0 1.5 1.5 2.0 2.0 2.5 2.5 3.0 3.0 3.5 VF (V) Fig. 8 - Typ. Diode Forward Characteristics Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs www.irf.com PRELIMINARY Typical Performance IF(AVG) Forward Current (A) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 200 Tc Case Temperature (°C) IRGB/S/SL15B60KDPbF Fig. 9 - Diode Current Derating 20 20 18 18 16 16 14 12 ICE = 5.0A VCE (V) VCE (V) 14 ICE = 15A 10 ICE = 30A 8 12 6 4 4 2 2 4 6 8 10 12 14 16 18 0 20 ICE = 15A ICE = 30A 8 6 0 ICE = 5.0A 10 4 6 8 VGE (V) Fig. 10 - Typical V vs. V 160 140 16 ICE (A) VCE (V) ICE = 30A T J = 150°C 20 6 8 10 12 14 16 18 VGE (V) Fig. 12 - Typical VCE vs. VGE Fig. 11 - Typical VCE TJ=150 °Cvs. VGE Fig.12 TJ = 150°C www.irf.com 80 40 2 T J = 150°C 60 4 4 CID150660 Rev. A 20 100 ICE = 5.0A ICE = 15A 6 0 18 T J = 25°C 120 14 8 16 Fig. 11 - Typical V vs. VGE 18 10 14 Fig. 11 10 - Typical VCE vs.CEVGE TJ=25°C TJ = 25°C 20 12 12 VGE (V) CE GE Fig. 9 - Typical VCE Fig.10 TJ=-40 °Cvs. VGE TJ = -40°C 10 20 0 T J = 25°C 0 5 10 15 20 VGE (V) Fig. 13 - Typ. Transfer Characteristics Fig. 12 - Typ. Characteristics Fig.13 VCETransfer =50V; tp= 10 μs VCE = 50V; tp = 10µs 5 PRELIMINARY Typical Performance IRGB/S/SL15B60KDPbF IRGB/S/SL15B60KDPbF 1800 2200 1600 1800 2000 2000 1400 1600 1800 1800 Energy (µJ) Energy (µJ) 1200 1000 1000 800 800 600 800 1000 600 800 400 0 10 15 20 3010 30 40 IC (A) 30 35 20 40 IC (A) 40 ttd FON tRtF 10 50 10 50 0 400 700 800 300 600 700 700 600 200 500 100 400 0 10 22 EOFF EON EOFF 39 62 300 400 Rg (Ohms) 200 300 100 100 200 390 62 0Rg (Ohms) 0 40 50 EON 100 EON 82 tdOFF tdOFF 100 8250 50 100 R G (:) R G (:) tdON 100 tR tdON tFt R 10 100 100 15 -Loss Typ. vs. Energy Fig. 16 - Typ.Fig. Energy RG Loss vs. RG TJ = 150°C; L=200µH; TJ = 150°C; L=200 CE= 400V µH; V = 400 V VLoss CE Fig. 15 - Typ. Energy vs. RG ICE==15 15A; VGE= 15V ICE= 15TA;=V150°C; V GE L=200µH; VCE= 400V J 6 ICE= 15A; VGE= 15V CID150660 Rev. A 50 tF 0 100 6 30 1000 EON 400 500 22 10 40 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=200µH; VCE= 400V Fig. 14 Fig. 15- -Typ. Typ.Switching SwitchingTime Timevs. vs.ICIC Fig.15 RG= 22:; VGE= 15V TTJJ==150°C; VCE = 400V 150°C;L=200µH; L=200 µH; VCE = 400 V RRGG==22:; = =15V 22 ΩV; GE VGE 15 V EOFF 500 600 200 10 30 I (A) 20C 1000 800 900 500 800 20 IC (A) 900 600 900 tR10 0 OFF 0 tdON 20 Energy (µJ) Energy (µJ) Energy (uJ) 0 25 20 100 Fig. - Typ.35Energy 25 13 30 40 Loss vs. I C TJIc =(A)150°C; L=200µH; VCE= 400V Fig. 13 - Typ. Loss vs. IC Fig. 14 - Typ. Energy vs.Energy IC RLoss G= 22:; VGE= 15V TJ =µH; 150°C; TJ = 150°C; L=200 VCE=L=200µH; 400 V VCE= 400V 22:; VGE= 15V RG= 22 Ω; VGE=R15 G= EV 15 1000 700 Energy (uJ) 10 Ic (A) 10 300 EON 0 200 0 0 200 800 EON 400 600 tdOFF 100 EON 200 400 400 600 EON EOFF tdOFF Swiching Time (ns) Swiching Time (ns) Energy (uJ) Energy (uJ) 1400 1200 900 EOFF 1000 1200 1400 1000 EEOFF OFF 1200 1400 1600 1600 0 1000 Swiching Time (ns) Swiching Time (ns) 2200 200 1000 150 150 10 0 50 0 50 100 R G (:) 150 100 150 R G (:) Fig. 16-17Typ. Switching Time vs.vs. RGRG Fig. - Typ. Switching Time TJT=J = 150°C; L=200µH; VCE == 600V 150°C; L=200 µH; V 600 CE Fig. 16- Typ. Switching Time vs. RV G ICEI= 15A; 15 V AGE ; V=GE15V =V15 V CE= L=200µH; TJ = 150°C; CE = 600V www.irf.com ICE= 15A; VGE= 15V www.irf.com 0 0 10 20 30 40 IF (A) PRELIMINARY Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C Typical Performance 16 10000 14 300V Cies 1000 VGE (V) Capacitance (pF) 12 100 10 8 6 Coes 4 Cres 2 0 10 0 20 40 60 80 400V 100 0 20 VCE (V) Fig.Typ. 18 - Capacitance Typ. Capacitance Fig. 22vs. vs. V VCE VGE=0 V; f= 1 MHz CE VGE= 0V; f = 1MHz 8 40 60 Q G , Total Gate Charge (nC) 19 - Typ. Gate Charge vs.VVGE Fig.19 Fig. 23 Fig. - Typical Gate Charge vs. GE ICE=15 A; L= 600 μH ICE = 15A; L = 600µH www.irf.com IRGB/S/SL15B60KDPbF Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 WJ 0.01 0.02 0.01 R1 R1 WJ W1 W1 R2 R2 W2 W2 Ci= WiRi Ci iRi R3 R3 W3 W3 WC W Ri (°C/W) Wi (sec) 0.231 0.000157 0.175 0.000849 0.201 0.011943 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 t1 , Rectangular Pulse Duration (sec) 20 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Fig 24. Fig. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Z thJC ) 10 D = 0.50 1 CID150660 Rev. A 0.20 1E+0 PRELIMINARY Typical Performance IRGB/S/SL15B60KDPbF L L VCC DUT 0 + - 80 V 1K DUT Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT Driver L - 5V 360V DC 480V Rg DUT Rg Fig.C.T.3 - S.C.SOA Circuit DUT / DRIVER VCC Fig.C.T.4 - Switching Loss Circuit R= DUT VCC ICM VCC Rg 10 CID150660 Rev. A Fig.C.T.5 - Resistive Load Circuit www.irf.com PRELIMINARY IRGB/S/SL15B60KDPbF 30 tF 500 tF 25 400 20 300 300 10 5% V CE 5% VCE 100 0 -1 0 0 0 .0 0.5 1 .5 1530 90% ICE 90% tes t current 1020 tes t current 10% tes t current 5% 5%VCEV C E t RI 10% CE 5 10 00 00 0 1.0 2040 200 200 100 100 5 E o ff L o s s E off Loss -0 .5 V CE (V) 200 ICE (A) V CE (V) 15 5 % 10% IC E ICE tR 400 400 9 0 I% IC E 90% CE 300 2550 500 500 ICE (A) 600 Eon Los s E on Loss -100 -100 -0.2 -5 -0.1 -5-10 0.0 0.1 t (µS ) t (µ S ) WF.1- Typ. Turn-off Loss @ TJ = 150°C using CT.4 WF.2- Typ. Turn-on Loss @ TJ = 150°C using Fig. CT.4 500 10 0 25 20 500 20 10 400 15 0 300 250 QRR 200 -2 0 0 100 -3 0 0 Pe a k IR R -4 0 00 -5-100 00 -00.00 .06 tRR 0.05 0 .0 4 0.100 . 1 4 t (µ S ) WF.3- Typ. Reverse Recovery @ TJ = 150°C using CT.4 www.irf.com 10 CID150660 Rev. A 0.15 200 150 IC E 200 100 5-2 0 100 50 0-3 0 0 -5 -4 0 -1 0 0 10 -1 0 Peak IRR Peak IRR VCE (V) VCE (V) 10 % Pe a k IR R ICE (A) tR R 300 -1 0 0 V CE ICE (A) 0 400 0 -1 0 0 10 20 30 -5 0 t (µ S ) WF.4- Typ. Short Circuit @ TJ = 150°C using CT.3 11 PRELIMINARY Package Dimensions PACKAGE TO-220-3 POS J N K D Min Max A .170 .180 4.32 4.57 B .028 .036 .71 .91 C .014 .021 .36 .53 D .59 .61 14.99 15.49 E .395 .410 10.04 10.41 F Q G S R P B C .100 TYP .200 BSC F G 11 CID150660 Rev. A 2.54 TYP 5.08 BSC J .048 .054 1.22 1.37 K .235 .255 5.97 6.47 L .100 .110 2.54 2.79 M .149 .153 3.79 3.88 N .102 .112 2.60 2.84 P .530 .550 13.47 13.97 Q L Millimeters Max A E M Inches Min 45˚ 45˚ R .045 .055 1.15 1.39 S .130 .150 3.31 3.81 Recommended solder pad layout. PRELIMINARY Recommended Solder Pad Layout TO-263-2 TO-220-2 TO-220-3 Part Number Package Marking CID150660B TO-220-3 CID150660 This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2001-2005 Cree, Inc. All rights reserved. Permission is given to reproduce this document provided the entire document (including this copyright notice) is duplicated. The information in this document is subject to change without notice. Cree and the Cree logo are trademarks of Cree, Inc. Cree, Inc. Power Products 4600 Silicon Drive • Durham, NC 27703 • USA Tel: 919-313-5300 • Fax: 919-313-5451 www.creepower.com The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006. Page 6 • CSD06060, Rev H This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 12 CID150660 Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power