AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
AP1110 is a linear, low current power amplifier
in ISM band utilizing InGaP /GaAs HBT
process. The AP1110 is well suitable to be
used for portable, low current 2.4GHz WLAN
applications as well as for BT (Bluetooth)
Class1 applications.
AP1110 is packaged in 2x2 compact profile.
For WLAN application, it features low current of
85mA at linear power of 18.5dBm, gain of
26dB under 3.3V. For Bluetooth applications, it
features of gain at 26 dB; typical power of
23dBm and PAE of 40% under 3.3V.
WLAN Applications:
(Under Vc=3.3V, Vref=2.8V)
• LOW Current: 85mA at 18.5dBm
• Ultra Small Profile: 2x2(mm), DFN-8pin
• High efficiency:
PAE: 25% at 18dBm
• Gain: 26 dB
BT Applications:
(Under Vc=3.3V, Vref=2.85V)
• LOW Current: 140mA at 23dBm
95mA at 20dBm
50mA at 14dBm
• Ultra Small Profile: 2x2(mm), DFN-8pin
• High efficiency:
PAE: 40% at 23dBm
• Gain: 26 dB
• Harmonic: -33dBc at 23dBm
Major Applications
• Bluetooth Class 1
• IEEE 802.11b/g WLAN system
• WLAN Portable Devices
• WLAN USB Devices
• Other 2.4 GHz ISM Band
Pin Details
Functional Block Diagram
Pin Number
Name
Description
1
2
3
Vcc
RFin
Vcc_Bias
Power Supply Input.
RF input.
Supply voltage for bias circuit.
4
NC
Non-connect.
5
Vb1
1st-stage control voltage
1
8
RFout
RFin
2
7
RFout
3
6
Vb2
6
Vb2
2nd-stage control voltage
4
5
Vb1
7
RFout
8
RFout
RF output. Require external
matching. The detail configuration
can be found in Application Notes
Vcc_Bia
s
NC
DFN - 8 pin, 2 x 2 (mm)
Package
Base
Center Metal
The package ground provides
circuit ground as well as heat
dissipation path for the power
amplifier.
Outside circuit for WLAN and BT application, please refer to the AP1110 Application note for different BT application usage
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
1 of 10
AP1110
Vcc
AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
Electrical Characteristics: WLAN Applications
Under Vc=3.3V, Vref=2.8V, Ta=25ºC
PARAMETERS
CONDITION
Freq.
SYMBOL
MIN.
f
2.4
TYP.
MAX.
UNIT
2.5
GHz
Total current
Pout=18.5dBm
Icc
85
mA
Basic control reference
current
Icq=21mA
Iref
0.5
mA
Power Gain
Pout=18dBm
Gp
26.5
dB
Icq
21
mA
Quiescent current
Input VSWR
1.5
Output VSWR
2
Output power
EVM 3%
PAE
18.5
dBm
PAE
25
%
Important
Absolute Maximum Ratings
Note:
Rating
Unit
DC Power Supply For
Collector
+5
V
DC Supply Current For
Collector
280
mA
RF Input Power
+5
dBm
Operating Ambient
Temperature
-40 to +85
°C
Storage Temperature
-40 to
+125
°C
The information provided in this datasheet is deemed
to be accurate and reliable only at present time.
RFIC Technology Corp. reserves the right to make
any changes to the specifications in this datasheet
without prior notice.
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
2 of 10
AP1110
Parameter
For more information,please contact us at:
Pout
AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
Electrical Characteristics: BT Applications
Under Vc=3.3V, Vref=2.85V, Ta=25ºC
PARAMETERS
CONDITION
Freq.
Total current
SYMBOL
MIN.
f
2.4
TYP.
MAX.
UNIT
2.5
GHz
Pout=23dBm
Icc
140
mA
Pout=20dBm
Icc
95
mA
Pout=14dBm
Icc
50
mA
Basic control reference
current
Icq=18mA
Iref
0.5
mA
Power Gain
Pout=20dBm
Gp
26
dB
Icq
18
mA
2f
-33
dBc
Quiescent current
Harmonic
Pout=23dBm
Input VSWR
2
Output VSWR
2.5
PAE
Pout=23dBm
Power
40
%
P1dB
23
dBm
Important
Absolute Maximum Ratings
Rating
Unit
DC Power Supply For
Collector
+5
V
DC Supply Current For
Collector
280
mA
RF Input Power
+5
dBm
Operating Ambient
Temperature
-40 to +85
°C
Storage Temperature
-40 to
+125
°C
The information provided in this datasheet is deemed
to be accurate and reliable only at present time.
RFIC Technology Corp. reserves the right to make
any changes to the specifications in this datasheet
without prior notice.
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
3 of 10
AP1110
Parameter
For more information,please contact us at:
PAE
AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
Data Charts: WLAN Applications
Fig.1 – Pin, PAE and Icc vs. Pout
-3
120
-4
110
-5
100
-6
Pin(dBm)
80
-8
70
-9
60
-10
50
-11
40
-12
PAE(%) & Icc(mA)
90
-7
30
-13
-14
20
-15
10
0
-16
12
13
14
15
16
17
18
19
20
21
Pout(dBm)
Pin(dBm)
Icc(mA)
PAE(%)
Fig.2 - Power Gain and EVM vs. Pout
28
10
9
8
27
6
26
5
EVM(%)
Gain(dB)
7
4
3
2
1
24
0
12
13
14
15
16
17
18
19
20
21
Pout(dBm)
Gain(dB)
EVM(%)
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
4 of 10
AP1110
25
AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
Data Charts: WLAN Applications
Fig.3 – S Parameters
S Parameters
50
DB(|S(1,1)|)
AP24
DB(|S(2,1)|)
AP24
DB(|S(2,2)|)
AP24
m2
0
m3
m1
-50
0.01
1.01
2.01
3.01
4.01
Frequency (GHz) m1: 2.45 GHz m2: 2.45 GHz
-13.6 dB
26 dB
5
m3: 2.45 GHz
-6.68 dB
AP1110
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
5 of 10
AP1110
RFIC Technology Corporation
www.rfintc.com
2.4~2.5 GHz Power Amplifier
2005.02.01 Preliminary
50 ohm
MLIN
EVB Circuit Diagram: WLAN Applications
AP1110
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
6 of 10
AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
Data Charts: BT Applications
Fig.4
1
170
165
160
155
150
145
140
135
130
125
120
115
110
105
100
95
90
85
80
75
70
65
60
55
50
0
-1
-2
-3
Pin(dB m )
-4
-5
-6
-7
-8
-9
-10
-11
-12
14
15
16
17
18
19
20
21
22
23
Icc (m A )
Pin & Icc vs. Pout
24
Pout(dBm)
Pin(dBm)
Icc(mA)
Fig.5
Power Gain vs. Pin
26
26
25
25
Gain(dB)
24
24
23
23
AP1110
22
22
21
21
20
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
Pin(dB m)
Gain(dB)
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
7 of 10
AP1110
RFIC Technology Corporation
2.4~2.5 GHz Power Amplifier
www.rfintc.com
2005.02.01 Preliminary
Data Charts: BT Applications
Fig.6
S Parameters
DB(|S(1,1)|)
B5
S Parmeter
30
DB(|S(2,1)|)
B5
DB(|S(2,2)|)
B5
m1
0
m
m3
2
-30
-60
-90
-120
0.01
2.01
4.01
Frequency (GHz)
m1: 2.45 GHz m2: 2.45 GHz
25.06 dB
-9.922 dB
6
m3: 2.45 GHz
-7.527 dB
AP1110
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
8 of 10
AP1110
RFIC Technology Corporation
www.rfintc.com
2.4~2.5 GHz Power Amplifier
2005.02.01 Preliminary
EVB Circuit Diagram: BT Applications
AP1110
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
9 of 10
AP1110
RFIC Technology Corporation
www.rfintc.com
2.4~2.5 GHz Power Amplifier
2005.02.01 Preliminary
Package Outline
Top View
Bottom View
1.5
2.00 + 0.1
0.5
0.2
2.00 + 0.1
0.4
0.6
MARKING
Pin 1 ID
1.2
Side View
Unit: mm
AP1110
Note：
1.
Dimension and tolerance conform to ASME Y14.5M1994.
2.
Refer to JEDEC STD. MO-220 WEED-2 ISSUE B
For more information,please contact us at:
© 2005 RFIC Technology Corporation All rights reserved.
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
RFIC Technology Corp. reserved the right to make any changes to the specifications without notice.
RFIC Technology Corp. is a subsidiary of RF Integrated Corporation (U.S.A.)
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