MICROWAVE CORPORATION
HMC315
v01.0701
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC315 is ideal for:
Saturated Output Power: +17 dBm
• Fiber Optic OC-48 Systems
Output IP3: +33 dBm
• Microwave Test Instrumentation
Gain: 15 dB
• Broadband Mobile Radio Platforms
Single Supply: +5V to +7V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC315 is an ultra broadband GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifier that operates from a single positive
supply. The surface mount SOT26 amplifier can
be used as a broadband gain stage, or used
with external matching for optimized narrow band
applications. The Darlington configuration results
in reduced sensitivity to normal process variations and provides a good 50-ohm input/output
port match. The amplifier provides 15 dB of gain
and +17 dBm of saturated power while operating
from a single positive +7V supply.
Electrical Specifications, TA = +25° C, As a Function of Vcc
Vcc = +5V
Vcc = +7V
Parameter
Units
Min.
Frequency Range
Gain
Max.
Min.
DC - 7
11
Gain Variation over Temperature
8 - 80
Typ.
Typ.
Max.
DC - 7
14
17
0.015
0.025
11
GHz
15
18
dB
0.015
0.025
dB/°C
Input Return Loss
7
10
7
10
dB
Output Return Loss
3
7
3
7
dB
Reverse Isolation
18
21
18
21
dB
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
8
11
13
16
dBm
Saturated Output Power (Psat) @ 1.0 GHz
10
13
15
17.5
dBm
Output Third Order Intercept (OIP3) @ 1.0 GHz
23
26
30
33
dBm
Noise Figure
6.5
6.5
dB
Supply Current (Icc)
30
50
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
HMC315
v01.0701
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Gain & Return Loss @ Vcc= +7V
20
20
15
15
5
0
-5
-10
0
-5
-10
-15
-15
-20
-20
-25
S11
S21
S22
5
-25
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
Gain vs. Temperature @ Vcc= +7V
4
5
6
7
8
Gain vs. Temperature @ Vcc= +5V
20
20
18
18
16
16
14
14
GAIN (dB)
GAIN (dB)
3
FREQUENCY (GHz)
12
10
8
6
12
10
8
6
+25C
+60C
-40C
4
+25C
+60C
-40C
4
2
AMPLIFIERS - SMT
10
S11
S21
S22
RESPONSE (dB)
RESPONSE (dB)
10
2
0
0
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
3
4
5
6
7
8
FREQUENCY (GHz)
Input & Output
Return Loss vs. Vcc Bias
Reverse Isolation vs. Vcc Bias
0
0
S12 Vcc=7V
-5
ISOLATION (dB)
-5
RETURN LOSS (dB)
8
Gain & Return Loss @ Vcc= +5V
-10
-15
S11 Vcc=7V
S22 Vcc=7V
S11 Vcc=5V
S22 Vcc=5V
-20
S12 Vcc=5V
-10
-15
-20
-25
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 81
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
P1dB vs. Temperature @ Vcc= +5V
20
20
18
18
16
16
14
14
P1dB (dBm)
P1dB (dBm)
P1dB vs. Temperature @ Vcc= +7V
12
10
8
6
+25C
+60C
-40C
12
10
8
6
+25C
+60C
-40C
4
4
2
2
0
0
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
18
16
16
14
14
Psat (dBm)
20
18
12
10
8
7
8
+25C
+60C
-40C
12
10
8
2
0
0
0
1
2
3
4
5
6
7
8
0
1
2
FREQUENCY (GHz)
3
4
5
6
7
8
FREQUENCY (GHz)
Output IP3 vs.
Temperature @ Vcc= +7V
Output IP3 vs.
Temperature @ Vcc= +5V
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
30
28
+25C
+60C
-40C
+25C
+60C
-40C
26
24
IP3 (dBm)
IP3 (dBm)
6
4
2
22
20
18
16
14
12
10
0
1
2
3
4
5
FREQUENCY (GHz)
8 - 82
5
6
+25C
+60C
-40C
4
4
Psat vs. Temperature @ Vcc= +5V
20
6
3
FREQUENCY (GHz)
Psat vs. Temperature @ Vcc= +7V
Psat (dBm)
AMPLIFIERS - SMT
8
6
7
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7
8
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Pout (dBm)
Gain (dB)
PAE (%)
-6
-4
-2
0
2
4
6
8
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
INPUT POWER (dBm)
-6
-4
-2
0
2
4
6
Power Compression
@ 3.0 GHz, Vcc= +5V
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
INPUT POWER (dBm)
Power Compression
@ 3.0 GHz, Vcc= +7V
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
8
Pout
Gain (dB)
PAE (%)
-6
-4
-2
INPUT POWER (dBm)
0
2
4
6
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20
AMPLIFIERS - SMT
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-20 -18 -16 -14 -12 -10 -8
Power Compression
@ 1.0 GHz, Vcc= +5V
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
Power Compression
@ 1.0 GHz, Vcc= +7V
Pout (dBm)
Gain (dB)
PAE (%)
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 83
HMC315
v01.0701
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Application Circuit
AMPLIFIERS - SMT
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+7.5 Vdc
RF Input Power (RFin)(Vcc = +7.0 Vdc)
+20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 60 °C)
(derate 4.14 mW/°C above 60 °C)
0.373 W
Thermal Resistance
(junction to lead)
242 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +60 °C
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
8 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v01.0701
MICROWAVE CORPORATION
HMC315
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Evaluation PCB
AMPLIFIERS - SMT
8
List of Material
Item
Description
J1, J2
PC Mount SMA Connector
U1
HMC315 Amplifier
PCB*
Evaluation PCB 1.5” x 1.5”
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to connect
the top and bottom ground planes. The evaluation circuit
board shown is available from Hittite upon request.
*Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 85