PTFC261402FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 2620 – 2690 MHz
Description
The PTFC261402FC is a 140-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2620
to 2690 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC261402FC
Package H-37248-4
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
Efficiency
20
Wide video bandwidth
•
Typical pulsed CW performance, 2655 MHz, 28 V
(combined outputs)
- Output power at P1dB = 140 W
- Efficiency = 50%
- Gain = 16.5 dB
•
Typical single-carrier WCDMA performance, 2655
MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB
- Efficiency = 30.5%
•
Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
•
Integrated ESD protection
•
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
•
Low thermal resistance
•
Pb-free and RoHS compliant
40
Gain
16
20
12
0
PAR @ 0.01% CCDF
8
-20
4
-40
0
c261402fc_gr1
33
Broadband internal matching
•
60
38
43
48
Efficiency (%)
Peak/Average (dB), Gain (dB)
24
•
-60
53
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (combined outputs, tested in Infineon production test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
17
18
—
dB
Drain Efficiency
D
23.5
25
—
%
ACPR
—
–34
–31
dBc
Adjacent Channel Power Ratio
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05, 2016-06-21
PTFC261402FC
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10
µA
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.1
—

Operating Gate Voltage
VDS = 28 V, IDQ = 900 mA
VGS
—
2.5
—
V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Operating Voltage
VDD
0 to +32
V
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (TCASE = 70°C, 140 W CW)
RJC
0.30
°C/W
Junction Temperature
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PTFC261402FC V1 R0
PTFC261402FCV1R0XTMA1
Thermally-enhanced earless flange, push-pull
Tape & Reel, 50 pcs
PTFC261402FC V1 R250
PTFC261402FCV1R250XTMA1
Thermally-enhanced earless flange, push-pull
Tape & Reel, 250 pcs
Pinout Diagram
S
D1
D2
Pin Description
D1, D2
Drain
G1, G2
Gate
S
Source (flange)
H-37248-4_pd_10-10-2012
G1
G2
Lead connections for PTFC261402FC
Data Sheet
2 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 900 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
VDD = 28 V, IDQ = 900 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
40
Gain
16
20
12
0
PAR @ 0.01% CCDF
8
-20
4
-40
0
c261402fc_g r2
33
38
43
48
-60
20
16
20
12
0
PAR @ 0.01% CCDF
8
-20
4
-40
0
53
c261402fc_gr3
33
49
40
18
48
30
-40
20
Efficiency
ACP Up
ACP Low
10
c261402fc_gr5
48
46
16
Gain
15
45
14
44
c261402fc_gr8
2610
2650
2690
43
2730
Frequency (MHz)
Average Output Power (dBm)
Data Sheet
Efficiency
13
2570
0
53
47
17
Gain (dB)
ACPR (dB)
19
-30
43
-60
53
50
Drain Efficiency(%)
2620 MHz
2655 MHz
2690 MHz
38
48
VDD = 28 V, IDQ = 900 mA, POUT = 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-10
33
43
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 900 mA,
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
-60
38
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
-50
40
Gain
Average Output Power (dBm)
-20
60
Efficiency
DrainEfficiency(%)
20
Peak/Average (dB), Gain (dB)
24
Efficiency (%)
60
Efficiency
Efficiency (%)
Peak/Average (dB), Gain (dB)
24
3 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Typical Performance (cont.)
Single-carrier WCDMA
Broadband Performance
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
VDD = 28 V, IDQ = 900 mA, POUT = 49 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
19
-10
-10
18
-15
-15
-20
-20
-5
47
ACP Up
-25
-25
46
Gain
17
45
16
44
Efficiency (%)
Gain (dB)
Return Loss (dB)
ACP Up (dBc)
Return Loss
43
15
Efficiency
-30
2730
14
2570
c 261402f c_gr9
2610
2650
2690
2690
2730
Single-carrier WCDMA
Broadband Performance
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 49 dBm,
3GPP WCDMA signal, 7.5 dB PAR
VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
19
47
-10
18
45
Return Loss
-15
-15
-20
-20
-30
2570
-25
ACP Up
2650
2690
43
16
41
14
2570
-30
2730
39
Efficiency
c261402f c_gr12
2610
2650
2690
37
2730
Frequency (MHz)
Frequency (MHz)
Data Sheet
17
15
c261402f c_gr11
2610
Gain
Gain (dB)
-10
-5
Return Loss (dB)
-5
ACP Up (dBc)
2650
Frequency (MHz)
Frequency (MHz)
-25
42
c261402f c_gr10
2610
Efficiency (%)
-30
2570
4 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Typical Performance (cont.)
CW Performance
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 900 mA
VDD = 28 V, IDQ = 900 mA, POUT = 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
-5
20
-10
-10
19
-15
-15
-20
-20
60
ACP Up
-30
2570
2650
2690
18
30
17
-25
16
-30
2730
15
2620 MHz
2655 MHz
2690 MHz
c261402f c_gr14
CW Performance
at selected VDD, (single side)
IDQ = 900 mA, ƒ = 2655 MHz
IDQ = 900 mA, ƒ = 2620 MHz
20
45
19
35
Gain
17
25
Efficiency
15
c261402f c_gr15
34
36
38
40
42
44
46
48
50
60
50
40
18
30
17
15
16
5
15
Efficiency
20
10
c261402f c_gr16
34
52
Output Power (dBm)
Data Sheet
VDD = 32 V
VDD = 28 V
VDD = 24 V
Gain
Gain (dB)
Gain (dB)
18
55
Efficiency (%)
VDD = 32 V
VDD = 28 V
VDD = 24 V
16
0
Output Power (dBm)
CW Performance
at selected VDD, (single side)
19
10
33 35 37 39 41 43 45 47 49 51 53
Frequency (MHz)
20
20
Efficiency
Efficiency (%)
Gain (dB)
40
c261402fc_gr13
2610
50
Gain
Efficiency (%)
-25
Return Loss (dB)
ACP Up (dBc)
Return Loss
36
38
40
42
44
46
48
50
0
52
Output Power (dBm)
5 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Typical Performance (cont.)
CW Performance
at selected VDD, (single side)
Small Signal CW
Gain & Input Return Loss, single side
IDQ = 900 mA, ƒ = 2690 MHz
VDD = 28 V, IDQ = 900 mA
-5
20
18
40
17
30
Efficiency
16
20
VDD = 32 V
VDD = 28 V
VDD = 24 V
15
c261402f c_gr17
36
38
40
42
44
46
-10
19
-15
-20
Gain
18
-25
10
14
34
IRL
Gain (dB)
50
Efficiency (%)
Gain (dB)
Gain
19
48
50
-30
17
2540
0
52
Input Return Loss (dB)
60
20
-35
2740
c261402f c_gr19
2580
2620
2660
2700
Frequency (MHz)
Output Power (dBm)
Load Pull Performance
Z Source
Z Load
D
S
G
G
D
Single Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 450 mA
P1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs 
Zl 
Gain [dB]
POUT
[dBm]
POUT [W]
PAE %
Zl 
Gain [dB]
POUT
[dBm]
POUT [W]
PAE %
2620
12.1 – j1.0
2.0 – j8.8
15.8
50.01
100
53.9
3.8 – j7.4
18
48.39
69
60.2
2655
15.7 – j0.2
2.0 – j9.0
15.7
49.98
99
53.2
3.5 – j7.7
17.9
48.50
71
59.5
2690
17.8 – j12.4 2.0 – j9.2
15.7
49.79
95
51.3
3.6 – j7.8
18.1
48.38
69
58.8
Data Sheet
6 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Reference Circuit
DUT
PTFC261402FC
Test Fixture Part No.
LTN/PTFC261402FC
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66
Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower)
C803 C802
R805
R802 C801
R04350, .020
(60)
R04350, .020 (60)
VDD
S5
S3
S4
C204
S2
C102
C101
C104
C209
PTFC261402FC
R103
L1
RF_IN
VDD
R803
R804
R104
C202 C203
L2
R103
S6
C208
C205
C207
RF_OUT
C211
R101
VDD
C212
C201
C103 S1
C210
C804
C208
PTFC261402_OUT_01
PTFC261402_IN_01
c261402fc_cd_1-30-13
Reference circuit assembly diagram (not to scale)
Data Sheet
7 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Reference Circuit (cont.)
Components Information
Component
Description
Suggested Supplier
P/N
C101, C104
Chip capacitor, 10 pF
ATC
ATC800A100JT
C102, C103
Capacitor, 10 µF
Murata Electronics North America
LLL31BC70G106MA01L
C801, C802, C803
Capacitor, 1 nF
Panasonic
ECJ-1VB1H102K
L1, L2
Chip inductor, 47 nH
Coilcraft
0603HP-47NXJLU
R101, R102
Resistor, 10 W
Panasonic Electronic Components
ERJ-3GEYJ100V
R103, R104
Resistor, 10 W
Panasonic Electronic Components
ERJ-8GEYJ100V
R801, R804
Resistor, 1k W
Panasonic Electronic Components
ERJ-8GEYJ102V
R802
Resistor, 1.3k W
Panasonic Electronic Components
ERJ-3GEYJ132V
R803
Resistor, 1.2k W
Panasonic Electronic Components
ERJ-3GEYJ122V
S1, S2
High frequency EMI filter, 1 µF
Murata Electronics North America
NFM18PS105R0J3D
S3
Potentiometer, 2k 
Bourns Inc.
3224W-1-202E
S4
Voltage Regulator
National Semiconductor
LM7805
S5
Transistor
Infineon Technologies
BCP56
Input
Output
C201, C202, C203, C210
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C204, C208
Electrolytic capacitor, 220 µF
Panasonic Electronic Components
EEE-FP1V221AP
C205, C206
Chip capacitor, 1 pF
ATC
ATC800A1R2BT
C206, C211
Chip capacitor, 2 pF
ATC
ATC800A1R6BT
C207
Chip capacitor, 8 pF
ATC
ATC800A8R2CT
C209, C212
Chip capacitor, 10 pF
ATC
ATC800A100JT
Data Sheet
8 of 10
Rev. 05, 2016-06-21
PTFC261402FC
Package Outline Specifications
Package H-37248-4
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
(http://www.infineon.com/rfpower)
Data Sheet
9 of 10
Rev. 05, 2016-06-21
PTFC261402FC V1
Revision History
Revision
Date
Data Sheet
Page
Subjects (major changes since last revision)
01
2011-11-10
Advance
All
Data Sheet reflects advance specification for product development.
02
2012-04-27
Preliminary
1, 2
Specifications updated.
03
2012-06-01
Advance
all
Reformat to Advance Specification—Marketing survey only.
04
2014-02-14
Production
all
Data Sheet reflects released product specification.
05
2016-06-21
Production
1
2
Added ESD rating
Maximum junction temperature raised to 225 °C, updated ordering info.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-06-21
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
10 of 10
Rev. 05, 2016-06-21