MMA-062020

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MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Features:







Frequency Range: 6 – 22 GHz
P1dB: 18.5 dBm @Vds=5V
Psat: 19.5 dBm @
Gain: 14 dB
Vdd =3 to 6 V
Ids = 130 mA
Input and Output Fully Matched to 50 Ω
Applications:



Communication systems
Microwave instrumentations
ECM
Die size: 920x920x50 um
Description:
The MMA-062020 is a broadband GaAs MMIC general purpose gain block for 20dBm saturated maximum output
power and high gain over full 6 to 22GHz frequency range. This amplifier was optimally designed for broadband
applications requiring flat gain with excellent input and output port matches.
Absolute Maximum Ratings:
SYMBOL PARAMETERS
(Ta= 25 C)*
UNITS
Min.
Max.
Vd1, Vd2 Drain-Supply Voltage
V
6.5
Vg1
Optional Gate supply Voltage
V
-5
1
Vg2
Optional Gate supply Voltage
V
-10
1
Id1
Drain Supply Current
mA
70
Id2
Drain Supply Current
mA
84
Pin max
RF Input Power
dBm
20
Tch
Channel Temperature
ºC
+150
Tstg
Storage Temperature
ºC
-55 to +165
Tmax
Max. Assembly Temp (60 sec max)
ºC
+300
*Operation of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 1 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Electrical Specifications:
Vds=5V, Ids=130mA, Ta=25 C Z0=50 ohm
Parameter
Units
Typical Data
Frequency Range
Gain (Typ / Min)
Gain Flatness (Typ / Max)
Input RL(Typ/Max)
Output RL(Typ/Max)
Output P1dB(Typ/Min)
Output IP3 (1)
Output Psat(Typ/Min)
Operating Current at P1dB
(Typ/Max)
Thermal Resistance
GHz
dB
+/-dB
dB
dB
dBm
dBm
dBm
6 - 22
14 / 13.5
0.8 / 1
8/7
10/8
18.3/18
28
19.5/19
mA
120 / 130
C /W
60
(1) Output IP3 is measured with two tones at output power of 0 dBm/tone separated by 20 MHz.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 2 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Typical RF Performance:
Vds=5V, Ids=130mA, Z0=50 ohm, Ta=25 ºC
20
15
S11, S21, S22 (dB)
10
DB(|S(1,1)|)
MEAS
5
DB(|S(2,1)|)
MEAS
0
DB(|S(2,2)|)
MEAS
-5
-10
-15
-20
0
5
10
15
Frequency (GHz)
20
25
30
S11[dB], S21[dB], and S22[dB] vs. Frequency
IM3 level [dBc] vs. Output power/tone [dBm]
P-1 and Psat vs. Frequency
Pout[dBm], Gain[dB], and Ids[mA] vs. Input power [dBm]
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 3 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Typical Bias dependent RF Performance:
20
18
16
S21 (dB)
14
12
10
8
DB(|S(2,1)|)
sp_3V120mA
6
DB(|S(2,1)|)
sp_4V120mA
4
DB(|S(2,1)|)
sp_5V120mA
2
DB(|S(2,1)|)
sp_6V120mA
0
2
4
6
8
Bias dependent P1 vs. Frequency
10
12
14 16 18 20
Frequency (GHz)
22
24
26
28
30
24
26
28
30
24
26
28
30
S21(dB) over voltage
0
-2
-4
S11 (dB)
-6
-8
-10
-12
DB(|S(1,1)|)
sp_3V120mA
-14
DB(|S(1,1)|)
sp_4V120mA
-16
DB(|S(1,1)|)
sp_5V120mA
-18
DB(|S(1,1)|)
sp_6V120mA
-20
2
4
6
8
10
12
14 16 18 20
Frequency (GHz)
22
S11(dB) over Voltage
0
DB(|S(2,2)|)
sp_3V120mA
-2
Bias dependent P-3 vs. Frequency
DB(|S(2,2)|)
sp_4V120mA
S22 (dB)
-4
-6
DB(|S(2,2)|)
sp_5V120mA
-8
DB(|S(2,2)|)
sp_6V120mA
-10
-12
-14
-16
-18
-20
2
4
6
8
10
12
14 16 18 20
Frequency (GHz)
22
S22(dB) over Voltage
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 4 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Typical Over Temperature RF Performance: Vds=5V, Ids=130mA, Z0=50 ohm, Ta=25 ºC
P1 over temperature
S21(dB) over temperature
S11(dB) over temperature
P-3 over temperature
S22(dB) over Voltage
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 5 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Applications
The MMA062020 is a GaAS PHEMT amplifier designed for Class-A condition, flat gain performance
from 6GHz to 22GHz. It is applicable for cascadable gain stage for EW amplifiers, buffer stages, LO drivers, and
transmitter amplifiers used in commercial communication systems. This amplifier is provided as a bare die
format in a Gel-pak.
Biasing and Operation
The MMA0622020 is normally biased with a single positive supply voltage connected to both Vd1 and
Vd2 pins. The recommended drain supply voltages are 3 to 6 volts. RF input and output ports are DC decoupled
internally. Typical DC supply connection with bi-passing capacitors for the MMA062020 is shown in following
pages.
Optional gate pads (Vg1 and Vg2) are also provided to allow adjustments in gain, RF output power, and
DC power dissipation, if necessary. No connection to the gate pads is needed for single drain-bias operation.
However, for custom applications, the DC current flowing through the input and/or output gain stage may be
adjusted by applying a voltage to the gate bias pad(s) as shown in Figure 5. A negative gate-pad voltage will
decrease the drain current. The gate-pad voltage is approximately zero volts during operation with no DC gate
supply. Refer to the absolute maximum rating table for allowing DC and thermal conditions.
Assembly Techniques
GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage,
handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are
critical factors in successful GaAs MMIC performance and reliability.
Vd1
Vd2
Q2
Q1
RF IN
Vg1
1.5K
2K
1.5K
RF OUT
650Ω
Vg2
Figure 1 MMA062020 Simplified schematic
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 6 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Mechanical Information:
Top view
920
0 165 365 570
Vd1
GND Vd2
920
920
RF_IN
535
535
RF_OUT
0
0
Vg1
Vg2
0 85
585
920
Units are in um.
Figure 2. Die outline and bonding pad locations
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 7 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Application Circuit:
Vd1
Vd2
0.1uF
Vd1
0.1uF
Vd2
RF Input
RF Output
RF
RF IN IN
RF
O RF OUT
Figure 3 Application for single drain-bias operation
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 8 of 9, Updated 10/10
MMA-062020
6-20GHz, 0.1W Gain Block
Data Sheet
November, 2012
Recommended Assembly:
Figure 4 Assembly for single drain-bias operation
Figure 5 Assembly with gate bias connection
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA-062020 Rev1.1 data sheet is subject to change without notice. All rights reserved © 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 9 of 9, Updated 10/10
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