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Innovation for
Energy Conservation
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For over 60 years, IR’s industry-leading power management
technology has helped transform crude electricity into clean,
efficient power. Today, IR strives to conserve the world’s
dwindling energy reserves by:
• Enabling affordable energy-saving solutions that squeeze
more efficiency from everyday electronic products and;
Package type
TO-220
Description
Transistoroutline
package
D2PAK (TO-263)
DPAK (TO-252)
SOT-223
SOT-23
SC-70
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YOUR SITE
FOR POWERFUL
SOLUTIONS
© 2008 Microsemi Corporation. All trademarks are property of Microsemi Corporation.
Number
of leads
(typical)
3, 5, 7
3, 5, 7
Discrete or
deca-watt
package
3
Smalloutline
transistor
3, 4, 5
Smalloutline
transistor
3, 4, 5,
6, 8
Single-chip
package
Dimensions of
representative part
Popular functions
in this package
5 lead = 1.2 x 2.0 x 0.9 mm
SOIC — narrow
Smalloutline
integrated
circuit
8, 14, 16
LDOs, switching regulators, power
controllers, MOSFET drivers, voltage
references, USB power switches,
battery chargers
MSOP
Mini smalloutline
package
8, 10
QSOP
Quarter
small-outline
package
16, 20,
24, 28
14, 16,
18, 20,
24, 28
Narrow = 0.150 in. nom. width
8 lead = 0.157 x 0.197 x 0.069
in. max (4.0 x 5.0 x 1.8 mm)
6, 8, 10,
12
6 lead = 2.1 x 2.1 x 1.0 mm max
Quad
flatpack
no lead
10, 12,
16, 20,
24, 28,
32, 36,
40, 48,
56, 64
24 lead = 4.0 x 4.0 x 0.75 mm
Thin quad
flatpack
no lead
16, 20,
24
24 lead = 4.0 x 4.0 x 0.55 mm
BGA
Ball grid
array
Approx.
8 to 250
113 lead = 8 x 8 mm
Power-management units,
LED drivers, driver+MOSFETs MCMs,
buck converter MCMs
LGA
Land grid
array
Approx.
8 to 250
133 lead = 15 x 15 x 2.8 mm
Driver+MOSFETs MCMs,
buck converter MCMs
Wafer-level
chipscale
package
Approx.
5 to 50
5 lead = 1.0 x 1.4 x 0.6 mm
16 lead = 0.157 x 0.197 x 0.059
in. max (4.0 x 5.0 x 1.5 mm)
Wide = 0.300 in. nom. width
24 lead = 0.295 x 0.606 x 0.091
in. (7.5 x 15.4 x 2.3 mm)
16, 20,
24, 28,
36,
44, 48
16 lead = 0.157 x 0.196 x 0.065
in. max (4.0 x 5.0 x 1.6 mm)
64 lead = 14.0 x 20.0 x 2.7 mm
QFP
Quad
flatpack
48, 64,
100
PLCC
Plastic
leaded chip
carrier
20
QFN
TQFN
8 lead = 0.118 x 0.118 x 0.034 in. LDOs, power controllers, switching
(3.0 x 3.0 x 0.9 mm)
regulators, MOSFET drivers,
supervisors, hot-swap controllers,
load share controllers, LED drivers
Thin shrink 8, 14, 16, 28 lead = 4.4 x 9.7 x 0.9 mm
small-outline 20, 24,
package
28, 38,
48, 56
Shrink smalloutline
package
Smalloutline
no lead
Voltage references,
temperature sensors, LDOs,
battery-authentication ICs,
supervisors
LDOs, switching regulators,
MOSFET drivers, supervisors,
motor controllers, hot-swap
controllers, battery-charger ICs
SSOP
6, 8, 10,
14
8 lead = 2.0 x 2.0 x 0.55 mm
TDFN
Thin dual
flatpack
no lead
5 lead = 0.063 x 0.115 x 0.040 in. LDOs, voltage references,
(1.6 x 2.9 x 1.0 mm)
supervisors, power controllers,
switching regulators, LED drivers,
battery chargers, power sequencers,
hot-swap controllers, load switches
8, 14, 16, 8 lead = 0.400 max x 0.250
18, 20, nom. x 0.130 nom. in. (10.2 x 6.3
22, 24, x 3.3 mm)
28
TSSOP
8 lead = 2.0 x 3.0 x 0.75 mm
LDOs
Dual-inline
package
Smalloutline
integrated
circuit
6, 8, 10,
12, 14,
16
LDOs, power controllers,
switching regulators, battery
fuel gauges, battery chargers,
battery-authentication ICs,
PoE power controllers
LDOs
DIP
SOIC — wide
DFN
Dual flatpack
no lead
SON
5, 6, 8
Popular functions
in this package
Description
5 lead = 0.400 x 0.390 x 0.178 in. LDOs
(10.2 x 9.9 x 4.5 mm)
4 lead = 3.6 x 6.5 x 1.6 mm
Dimensions of
representative part
Package type
7 lead = 0.400 x 0.390 x 0.178 in. LDOs, switching regulators,
(10.2 x 9.9 x 4.5 mm)
MOSFET drivers, motor drivers
3 lead = 6.6 x 7.3 x 2.3 mm
Number
of leads
(typical)
• Tackling tough technology roadblocks by delivering high
power density that extends performance of next-generation
communications and computing equipment with less
wasted energy.
Power controllers, MOSFET
drivers, hot swap controllers,
battery chargers
Switching regulators, power
controllers, MOSFET drivers,
supervisors, motor controllers
Power controllers, switching
regulators, MOSFET drivers,
LED drivers, battery fuel gauges
Power controllers, hot-swap
controllers, LED drivers,
battery chargers
Power-management units,
PoE controllers, motion controllers,
battery fuel gauges
20 lead = 9.0 x 9.0 x 4.1 mm max Power controllers,
switching regulators, supervisors,
motor controllers
WLCSP
LDOs, switching regulators,
MOSFET drivers, battery fuel
gauges, battery-authentication
ICs
Power controllers, switching
regulators, MOSFET drivers,
hot-swap controllers, battery
chargers, supervisors, power
sequencers, LED drivers,
power-management units
THE POWER MANAGEMENT LEADER
Build Vishay
into your design
LDOs, switching regulators,
LED drivers, power-management
units
Discrete Semiconductors
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Note s:
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1
This wall chart depicts popular IC packages in which power-conversion and
power-management functions are commonly offered. The package types shown
here are generally available from multiple vendors, though some are offered
under different names. For example, packages similar to DFNs and QFNs are alternatively described as MLPs, MLFs and LLPs.
2
3
The listings for "number of leads" reflect typical pin counts that are available
from multiple vendors for power ICs.
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Passive Components
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Dimensions shown for a representative device are intended to allow rough size comparisons among the different package styles. Nominal body-size dimensions are typically shown, unless “max” is indicated. Some of the packages shown also may be available in other footprints or package heights.
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4
5
Through-hole and leaded surface-mount packages are shown in the table on the left, while no-lead and array-style packages are shown in the table above.
This chart is not meant to represent package types used primarily for discrete
power semiconductors such as rectifiers and MOSFETs. However, some of the
packages shown here are also used for those devices.
®
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
www.vishay.com
1962: Introduces new
epitaxial process for
producing industry’s
most stable
high voltage SCRs
1947: IR opens for
business, launching
selenium rectifiers
1954: Commercializes
germanium rectifiers
1979: Patents first
commercially viable
Power MOSFET
(HEXFET®)
1959: A pioneer in
silicon controlled
rectifier (SCR)
1950
1960
1980: Introduces high reliability
power semiconductor devices
for space programs
1970
1983: Launches first
commercially viable high
voltage power ICs
1996: Introduces
MOSFET and Schottky
in a single package
1980
1990
2000
Introduces wafer
level package
(FlipFET™)
2001: Invents
integrated
building blocks
for DC-DC
converters
(iPOWIR™)
2002: Introduces
integrated design
platform for motion
control (iMOTION™)
Invents first dual-sided
surface mount package
(DirectFET™)
Invents scalable multiphase architecture
for DC-DC buck
conversion (xPHASE™)
2004: Sets
new standard
In lighting ICs
2003:
Introduces
iMOTION™
Digital
control ICs
2006: Introduces high reliability
motor drive module;
AC-DC Smart Rectifier IC
2007: Adds N+1 redundancy and HotSwap
capability to xPHASE ICs
2005: Introduces
µPFC™, One-cycle
controller for PFC
First in Power Management
First in Innovation
When you think IR,
think innovation.
INNOVATIVE power semi technology
INNOVATIVE application-specific chip sets
INNOVATIVE packaging designs
INNOVATIVE power systems architectures
A rare blend of benchmark
silicon, advanced circuit
design, control architecture,
packaging and applications
know-how.
For over 60 years, engineers have relied
on International Rectifier’s benchmark
technology to transform crude electricity
into clean, efficient power for home
appliances, satellites, automobiles,
portable electronics, computing,
telecommunications, and a host of
other systems.
for more information call 1.800.981.8699 or visit us at www.irf.com
THE POWER MANAGEMENT LEADER
®