Lahore University of Management Sciences
EE 340–Devices and Electronics
Fall 2014-15
Instructor
Dr. Tehseen Zahra Raza
Room No.
SSE L-301
Office Hours
TBA
Email
tehseen.raza@lums.edu.pk
Telephone
3522
Secretary/TA
TBA
TA Office Hours
TBA
Course URL (if any)
Lms/zambeel
Course Basics
Credit Hours
4
Lecture(s)
Nbr of Lec(s) Per Week
2
Duration
75 minutes each
Recitation/Lab (per week)
Nbr of Lec(s) Per Week
1
Duration
3 hours
Tutorial (per week)
Nbr of Lec(s) Per Week
Duration
Course Distribution
Core
Core course for Electrical Engineering Majors
Elective
Open for Student Category
Close for Student Category
COURSE DESCRIPTION
This course lays the foundations for the design of electronic systems for various applications. The fundamentals of device physics are discussed
laying the foundation to understand the operation of diodes, bipolar junction transistors and field effect transistors. It will cover topics on
modeling microelectronic devices, circuit analysis and design. The course will develop and use large-signal techniques to analyze and design BJT
and FET circuits including an overview of multistage amplifiers. Finally the small-signal behavior of BJT and FET is studied along with appropriate
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mathematical models.
COURSE PREREQUISITE(S)
EE240: Circuits 1
EE242: Circuits 2
COURSE OBJECTIVES
To overview the fundamentals of semiconductor physics and devices; PN junction diode, MOSFET and BJT.
To develop skills needed for analysis and design of electronic systems using these components.
Learning Outcomes
Grading Breakup and Policy
Lahore University of Management Sciences
This grading policy istentative.
Quiz(s): Quizzes 20%
Assignment(s): 5%
Labs and Final Project: 5% + 5%
Midterm Examination: 25%
Final Examination: 40%
Assignment(s): 2
Quiz(s): 4-5
Class Participation: Class participation is encouraged
Attendance: Attendance is not compulsory but participation and punctuality is expected
Midterm Examination: One
Project: One end term Project
Final Examination: Comprehensive
Examination Detail
Yes/No: Yes
Combine Separate: Combine
Midterm
Exam
Duration: 60 mins
Preferred Date: TBA
Exam Specifications:
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Yes/No: Yes
Final Exam
Combine Separate: Cumulative
Duration:
Exam Specifications:
COURSE OVERVIEW
Week/
Lecture/
Objectives/
Topics
Application
Module
Semiconductors – General Introduction
NO LAB
Carrier modeling – energy bands and band gaps
Session 1 LAB 1 Diode Characteristics
Density of States, Fermi Energy
Doping/carrier concentration
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PN Junction structure and electrostatics
Session 2 LAB 1 Diode Characteristics
PN Junction I-V characteristics
I-V characteristics, Small signal admittance
Session 3 LAB 2 Diode Applications
Diode circuits – models and applications
Diode circuits – models and applications
Session 4 LAB 2 Diode Applications
Diode circuits – analysis and applications
MOSFET- Introduction, Structure and device
Session 5 Lab 3 Characteristics of MOSFET
operation, models
MOSFET- Introduction, Structure and device
operation, models
Session 6 Lab 4 MOSFET as an amplifier
MOSFET – Biasing and DC analysis
Session 7 Lab 4 MOSFET as an amplifier
Midterm
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MOSFET – Biasing and DC analysis
Session 8 Lab 5 Common Gate and Common
Drain Amplifiers
MOSFET – Small signal models and analysis
MOSFET – Amplifier configurations
Session 9 Lab 6 Frequency Response of
Common Source Amplifier
MOSFET – Amplifier characteristics
Transistor Switch and Inverter
Session 10 Lab 7 CMOS Digital Logic Inverter
Current Mirror configurations
BJT – Structure and device operation, models
Session 11 Lab 8 Switching Circuits and
Timers
Session 12 : FINAL PROJECT
BJT – Structure and device operation, models
BJT – Biasing and DC analysis
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Session 13 : FINAL PROJECT
BJT – Small signal models and analysis
BJT – Amplifier configurations and analysis
Sesison 14 : FINAL PROJECT
Textbook(s)/Supplementary Readings
TEXTBOOKS
Microelectronic Circuits by Sedra and Smith, 6th Edition, Oxford University Press, 2010
SUPPLEMENTARY READING
Semiconductor Device Fundamentals by Robert Pierret, Addison Wesley, 1996
Fundamentals of Microelectronics by Behzad Razavi, Wiley , 2008.
Introduction to Solid State Physics by Charles Kittel, 7th Edition, Wiley.
Description of Laboratory Exercises
Following are the labs that will be conducted during this course. Handouts of actual lab to be conducted will be provided
in the preceding week.
Session 1: Diode characteristics of pn junction diode, LED and zener diode
To understand the characteristics of various semiconductor diodes and the parameters used to model their behavior. In
this lab characteristics of a pn junction diode, LED and zener diode are studied.
Session 2: Junction capacitance and opto-coupling of LED
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This lab is the continuation of Session 1. The junction capacitance and opto-coupling of LED is studied.
Session 3:Diode applications I
Session 4: Diode applications II
This lab comprises of two sessions to study various applications of diodes. The following circuits will be studied in
Session 3 and Session 4.





Use of diode as a half-wave and full-wave rectifier
ripple reduction with capacitor filter
regulation using a zener diode,
clamping circuit
voltage multipliers
Session 5: Lab No. 3: MOSFET Characteristics
Characteristics of a MOSFET device and understanding the parameters used to model its behavior.
Session 6: Transistor as an amplifier I
Session 7: Transistor as an amplifier II
Biasing schemes and amplification characteristics of a single stage common source MOSFET amplifier will be
considered in Session 6 and Session 7
Session 8: Common Drain and Common Gate Amplifiers
Biasing and amplification characteristics of a common gate and common drain MOSFET amplifiers
Session 9: Frequency Response of MOSFET amplifier
High frequency and low frequency response of a common source MOSFET amplifier
Session 10: CMOS Digital Logic Inverter
Voltage transfer characteristics and dynamic operation of CMOS digital logic inverter
Session 11: Switching Circuits and Timers
Design and working of discrete component multi-vibrators with BJTs and applications of 555 timer
Sessions 12 – 14: Final Project: Group project (4 members maximum)
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Proposal to be submitted in week 10.