BSS138
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
•
•
•
•
Drain
SOT23
D
Gate
S
G
Source
Top View
Top View
Equivalent Circuit
Ordering Information (Note 3)
Part Number
BSS138-7-F
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
YW
K38
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
BSS138
Document number: DS30144 Rev. 14 - 2
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January 2011
© Diodes Incorporated
BSS138
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 20KΩ
Gate-Source Voltage
Drain Current
Symbol
VDSS
VDGR
VGSS
ID
Continuous
Continuous
Value
50
50
±20
200
Units
V
V
V
mA
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
50
⎯
⎯
75
⎯
⎯
⎯
0.5
±100
V
µA
nA
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
gFS
0.5
⎯
100
1.2
1.4
⎯
1.5
3.5
⎯
V
Ω
mS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A
VDS = 25V, ID = 0.2A, f = 1.0KHz
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
8.0
pF
pF
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
20
20
ns
ns
VDD = 30V, ID = 0.2A, RGEN = 50Ω
4. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0.6
Tj = 25°C
ID, DRAIN-SOURCE CURRENT (A)
Min
0.8
VGS = 3.5V
0.5
ID, DRAIN-SOURCE CURRENT (A)
Notes:
Symbol
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0
1
2
3
4
5
6
7
8
9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
BSS138
Document number: DS30144 Rev. 14 - 2
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0.7
VDS = 1V
-55 °C
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0
0
0.5 1
2.5
1.5
2
3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4
4.5
January 2011
© Diodes Incorporated
2.45
2
2.25
1.8
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (Ω)
BSS138
2.05
1.85
VGS = 10V
ID = 0.5A
1.65
1.45
1.25
VGS = 4.5V
ID = 0.075A
1.05
0.85
1.6
ID = 1.0mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55
0.65
-55
-25
5
35
65
95
125 155
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
-5
45
145
95
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
150°C
VGS = 2.5V
7
6
5
25°C
4
3
-55°C
2
1
0
6
VGS = 4.5V
5
150°C
4
3
2
25°C
1
-55°C
0
0.1
BSS138
Document number: DS30144 Rev. 14 - 2
VGS = 2.75V
7
150°C
6
5
4
25°C
3
2
-55°C
1
0
0.1
0.15
0.25
0.2
ID, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0.3
0.5
0.2
0.4
ID, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0
8
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
ID, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
0
9
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0.05
3.5
VGS = 10V
3
150°C
2.5
2
1.5
25° C
1
-55°C
0.5
0
0.1
0.3
0.5
0.2
0.4
ID, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain-Current
0
January 2011
© Diodes Incorporated
BSS138
1
100
C, CAPACITANCE (pF)
ID, DIODE CURRENT (A)
VGS = 0V
f = 1MHz
0.1
150°C
-55°C
0.01
25°C
CiSS
10
COSS
CrSS
1
0.001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
Package Outline Dimensions
A
B C
H
K
M
K1
D
J
F
L
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
X
BSS138
Document number: DS30144 Rev. 14 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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January 2011
© Diodes Incorporated
BSS138
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
BSS138
Document number: DS30144 Rev. 14 - 2
5 of 5
www.diodes.com
January 2011
© Diodes Incorporated