Confidential
Revolutionary New Transistor Technology
for
Flat Panel Displays,
1
Boo Nilsson
Juneⓒ3,
2014
Do not copy or distribute. Copyright
2014,
CBRITE, All rights reserved worldwide
Outline
2
I.
CBRITE Introduction & Team
II.
CBRITE’s Metal Oxide Thin Film Transistor (MOTFT)
III.
Portable Display Applications
IV.
TV Applications
V.
CBRITE’s IP Portfolio
VI.
Business Model
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
I. CBRITE Introduction & Team
3
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
Overall CBRITE Intro Summary
CBRITE has the 4 P’s of success:
PEOPLE, PATENTS, PARTNERSHIPS, & PERFORMANCE
 Assembled a Highly Experienced World Class Team, with great experience and
relationships, great people in company and on BOD and in industry.
 Developed a Revolutionary High Performance Transistor Technology protected
by an Extensive IP Portfolio, which can be a platform for multiple industries.
Issued in USA and CHINA with broad basis and coverage, and unique in high
performing non-IGZO MOTFT (Metal Oxide Thin Film Transistor).
 Entered into Multiple Partnerships with Leading CE Companies and Major Flat
Panel Makers to Develop Products on Partner’s Manufacturing Lines, with
major scale up already demonstrated, at high performance.
 CBRITE’s Backplane Technology matches the 10+ year Roadmap for both low
power Portable Display Devices and next Generation High Performance TVs
4
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
Next Generation Backplane Technology - Optimal Global Presence
HQ/Technology Center
Santa Barbara, California
Product Development
Hsinchu, Taiwan
 Technology Driven - Understanding Fundamentals - Innovation - Manufacturability
-
Bring High Performance, Low Cost (CAPEX and OPEX) Backpanel Technology to the Market
 Experienced Display Team
-
Management team: 100+ years Flat Panel Display Technology Experience and 200+ Patents
Headquarters: R&D, IP Development, Marketing in USA ~20 People
Product and Prototype Development: Taiwan/China ~10 People
 Early Stage Manufacturing Focus
5
Prototypes are already being fabricated on Flat Panel Manufacturing Lines
Close Collaboration with Industry Leading Manufacturers
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
CBRITE’s New MOTFT: A Platform Technology (Displays & Beyond)
CBRITE’s Revolutionary
MOTFT Technology
• Ultra High
Performance MOTFT
• Manufactured on
Existing Low Cost
Manufacturing Lines
• Performance Enables
New Applications at
Low Cost
6
Displays
AMLCD
AMOLED
Image
Arrays
Sensors
Disposable
Electronics
• Mobile device
• High end TVs
• X-ray
• With Gain
• Flexible
• Non-planar
• Disposable
Biosensors at
Low Cost
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
II. CBRITE’s Metal Oxide Thin Film Transistor (MOTFT)
7
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Transistor technologies : Trade-offs and advantages
Single
Crystal
Silicon
Transistor Performance
The BEST!
Low
Temperature
Poly-silicon
(LTPS)
CBRITE
MOTFT
InGaZnO
(IGZO)
Amorphous
Silicon
Cost/sq.in
8
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CBRITE’s Revolutionary Metal Oxide (MO) Backplane Technology
 Concept – We optimized every aspect of TFT
-
Built on deep understanding of device physics
-
Optimized design and control of key interfaces
-
Optimized microstructure of key layers
Gate
S/D
ES
Channel
GI
Glass
 Resulting in:
-
Outstanding device performance
-
Excellent device stability [forward and reverse]
5 Mask Process in a-Si TFT industry
 Device performance equals LTPS in EVERY
aspect
 Cost equals a-Si manufacturing process
 Compatible with existing a-Si lines
 Supported by strong IP portfolio
Vgs [V]
9
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
Structure of CBRITE MOTFT
S/D
ES
ES
Channel
Gate
GI
Glass
 Bottom Metal Gate Providing Optical
Shielding in Backplane used for AMLCD
 Top Metal S/D without or with ES
 Non-IGZO type of MO Channel
 With Process well Suited for Existing
a-Si Lines
S/D
BCE
Channel
Gate
Glass
GI
 With High Conductivity Material for
Electrodes and Bus Lines, Suitable for
High Information Content Displays
The structure, the process and the corresponding materials used
in CBRITE’s MOTFT are compatible to a-Si manufacture lines
10
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III. Portable Display Applications
11
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Trends in Present and Future Portable Computing Products
 Market Demands Continual
Improvements of Displays:
Hi-Res LCD & OLED Smart Phones
 Larger Area, Higher Resolution > 400 ppi
[Pixels per Inch]
 OLED Displays
 Longer Battery Life
 Narrower Bezels
 Thinner, Brighter, Lighter, Flexible
iPhone 5 Samsung
Galaxy S-5
HTC One
Hi-Res Tablets
 Technology Challenges:
 Power Consumption – Battery Life
 Integrating Drivers on the Glass
 Cost of Changing Backplane Technology is
Enormous
 CBRITE Backplane Provides the Solution!
12
Kindle Fire HDX
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
Apple I-Pad Air
MOTFT tailored for Next-G AMLCDs: Adaptable to Existing a-Si TFT lines
Mobility (cm2/Vs)
DC NBTIS @ 60C
>60
-0.32V
DC PBTS @ 60C, 1hr
Vgs=+20V, Vds=0.1V
0.73V
DC NBTIS @ 60C, 1hr
Vgs=-20V, Vds=0.1V
-0.22V
0m
15 m
30 m
45 m
60 m
ID [A]
DC NBTS @ 60C, 1hr
Vgs=-20V, Vds=0.1V
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
1.E-14
-20 -15 -10 -5
1.E-04
1.E-06
0m
15 m
30 m
45 m
60 m
ID [A]
1.E-08
1.E-10
1.E-12
1.E-14
-20 -15 -10 -5
13
10 15 20
DC NBTS @ 60C
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
1.E-14
0m
15 m
30 m
45 m
60 m
ID [A]
1.E-02
DC PBTS @ 60C
VG0 [V]5
VG0 [V]5
10
15
20
-20 -15 -10 -5
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VG0 [V]5
10 15 20
CBRITE MOTFT provides performance & low power for portable displays
Examples for ~10 inch Tablet
Tablet
Gen-1
Tablet
Gen-2
Tablet
Gen-3
CBRITE
MOTFT
IPS-LCD
Tablet
“Gen 4”
CBRITE
MOTFT
IPS-LCD
CBRITE
MOTFTOLED
TFT
a-Si
a-Si
a-Si
CB-MOTFT
a-Si
CBMOTFT
CB-MOTFT
Display
Format
1024x720
2048x1440
2048x1440
2048x1440
4Kx2K
4Kx2K
4Kx2K
Pitch size
130 ppi
264 ppi
264 ppi
264 ppi
440 ppi
440 ppi
440 ppi
Aperture
Ratio
~70%
~48%
~48%
~75%
~26%
~70%
~75%
Power
2.8W
7.0W
5.5W
3.3W
9.2W
3.5W
2.3W
For more technical details see Dr. Gang Yu’s paper Wednesday at 9:20 AM
Display Manufacturing: Oxide TFT Session 21:2 Room 2
14
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
IV. TV Applications
15
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
Displays in Future TV and Large Screen Products
 Market Demands Something Dramatically
Different:
 Vastly Improved Image Quality,
Contrast and Color Gamut
 Larger Size ≥ 80”
 2160 and 4320 Lines at ~480 Hz
 Thinner, Lighter, Eventually Flexible
LGD 77” Curved 4k OLED TV
 Technology Challenges:
 OLED Requires a New Backplane
 Scaling of LTPS is Unlikely
 Cost of LTPS is Prohibitive
 Huge Installed Base of a-Si lines
 CBRITE’s Backplane - the Solution!
Samsung 105” Curved 4k LCD TV
16
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
TV Evolution: Feasible Technologies- CBRITE is “NEXT GEN MO” !
2k1k
•Resolutions
•1920x1080 (2kx1k) HD
•3840x2160 (4kx2k) UHD1
•7680x4320 (8kx4k) UHD2
•Frame rate
•Thin & Slim
•Thin edge
•No edge
17
8k4k
MOTFT Gen 2
•8k4k 480 Hz
•CBRITE MOTFT
(7680x4320)
HD 1280x720
•120 Hz blur reduced
•240 Hz blur free or 3D
•480 Hz blur free +3 D
4k2k
480 Hz Single Scan
MOTFT Gen 1
•4k2k 240 Hz
•IGZO base MOTFT
(3840x2160)
480 Hz Dual Scan
a-Si
•1920x1080 240
Hz
•Most common
tech
•Plenty capacity
•Single/Dual scan
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
MOTFT for OLED/LED TV: Suitable for 8Kx4K TV
 S.S.:
<0.2V/dec
ID [A]
 Hysteresis: <0.1V
 Rout(DVds/DId): ~100MW@10uA
 Stable PBTS, NBTS & CCS @ 60
oC,
DC
 >54C passing TFT @ 60C; Suitable
for OLED TV with 10Year operation life
Vg = 0 V
Vg = 1 V
Vg = 2 V
Vg = 3 V
Vg = 4 V
2.0E-04
1.5E-04
1.E-04
1.E-06
Vd = 10 V
60.0
µ (linear)
50.0
µ (sat)
40.0
30.0
20.0
10.0
0.0
ID [A]
ID [A]
0.0E+00
0
5
10
VD [V]
15
20
5
VG [V]
VG0 [V]5
10 15 20
DC NBTS@60C: Vgs=-20V, Vds=0.1V
0m
15 m
30 m
45 m
60 m
1.E-04
1.E-06
1.E-08
1.E-12
1.E-14
1.E-14
5
V0G [V]
10
15
20
DVth=0V
1.E-10
1.E-12
Flat Id vs Vds enable narrow power lines
DVth=-0.1V
1.E-02
DVth=+0.17V
-20 -15 -10 -5
0h
10 h
20 h
30 h
40 h
50 h
60 h
70 h
75 h
-20 -15 -10 -5
10 15 20
0m
15 m
30 m
45 m
60 m
1.E-10
5.0E-05
0
DC PBTS@60C: Vgs=+20V, Vds=0.1V
1.E-08
1.0E-04
18
70.0
-20 -15 -10 -5
1.E-02
2.5E-04
Vd = 0.1 V
Current Stress@200μA, 60C
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
1.E-14
ID [A]
>1010
80.0
ID [A]
 Ion/Ioff:
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
1.E-14
Mobility, µ [cm2/Vs]
 Mobility: >60 cm2/Vsec
Stable Vth enables 2T1C Pixel Driver
-20 -15 -10 -5
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
0
5
VG [V]
10 15 20
MOTFT and Gate Dielectric on Flexible Substrate: Great Performance
Chart Title
W/L=100um/9um
1.E-02
1.E-03
1.E-04
Id(A),Vd=10V
Next gen MOTFT, on next gen substrate
Vg-Id:Vd=1V
Vg-Id:Vd=5V
Vg-Id:Vd=10V
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
-20
-15
-10
-5
0
5
10
15
20
Vg(V),step=0.2V
Process Temperature <160C
m > 55 cm2/Vs
Ioff < 10-12 A; Ion/Ioff (10V)~109
S~ 0.2V/decade
Gate dielectric: 70nF/cm2, <1nA/cm2
Excellent stability
19
Stability equal to best published
IGZO data on glass
Lightweight Unbreakable Substrate
For High-Res & wearable displays
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
V. CBRITE’s IP Portfolio
20
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
CBRITE IP – Freedom to Operate in Metal Oxide TFT Space
 CBRITE Owns All Necessary IP for its Metal Oxide TFTs
 32 TFT Patents filed; several in preparation
- 13 Issued US patents including key patents on method of making
interfaces of MOTFT, self-aligned processing and AMOLED displays
- Several CBRITE patents were issued with little or no restrictions by
USPTO
- All CBRITE patents cover general metal oxide composition including
ZnO, InZnO, and InGaZnO
 Key CBRITE MOTFT patents recently issued in China
 Performance and stability of CBRITE’s MOTFT are well-covered
 IGZO (the competition) requires licenses from at least 6 separate
parties (including CBRITE)
 CBRITE offers ‘one-stop-shopping’ IP licensing for MOTFT
21
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
VI. Business Model
22
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide
Flat Panel Display Business Model
CBRITE’s Transition from R&D Phase to Mature Licensing Company
 Business Model: IP Licensing
 Marketing Approach: Attract leading flat panel makers to verify
device performance at CBRITE’s facilities
 Process Transfer: Technology Transfer Agreements – Work
side-by-side with flat panel manufacturers to implement CBRITE’s
process on their manufacturing lines
 Highly selective in choosing technology transfer partners
-
Select partners who are leaders in different market segments
Work on partners’ existing a-Si manufacturing lines
Support with fast turn-around R&D line at CBRITE
Disclose highlevel technology
architecture
23
Implement
technology
on partner’s
production
line
Develop
full
product
prototype
Demonstrate
viability,
sample
product
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Scale
production
to entire
product line
THANK YOU for your interest and your time
Enabling the “displays of tomorrow”, TODAY!
Boo Nilsson, CEO, CBRITE
Global phone: +1.805.722.1122
Mobile: +1.805.252.9391
Boo@cbriteinc.com
24
Do not copy or distribute. Copyright ⓒ 2014, CBRITE, All rights reserved worldwide