Institute / School Name
Chitkara School of Engineering & Technology
Program Name
B.E.(Electronics & Communication Engineering)
Course Code
ECL5201
Course Name
Fundamentals of Electronic Devices
Lecture / Tutorial (per week)
4/1
Course Coordinator Name
Mr. Sunil Kumar
1.
Course Credits
4.5
Scope and Objectives of the Course
To provide an in-depth study and understanding of the fundamental components such as diodes, transistors
and field effect transistors. The course instructions are useful in understanding the various characteristics of
the different types and the analysis and applications of the same.
The above mentioned topics will help the students to develop sufficient knowledge. After studying this
course, they will be able to co-relate and apply fundamental key concepts of basic devices with various day
to day routine and industrial applications.
2.
Textbooks
TB1: ‘Electronic Devices and Circuit Theory’ by Robert.L.Boylestad, Louis Nasheley, 9
Education.
th
edition, Pearson
TB2: ‘Integrated Electronics’ by Jacob Millman,Christos. C.Halkias , Tata Mc Graw Hill.
3. Reference Books
th
RB1:” Microelectronic Circuits” by Adel S. Sedra & Kenneth C Smith, 5 edition, Oxford University Press
4. Other readings and relevant websites:
S.No.
Link of Journals, Magazines, websites and Resear ch Papers
Link 1
http://nptel.iitm.ac.in/syllabus/syllabus.php?subjectId=117103063
Link 2
http://nptel.iitm.ac.in/syllabus/syllabus.php?subjectId=117107095
Link 3
http://digital-library.theiet.org/
5. Course Plan
Lect. No.
(1 Hour)
1-2
3-4
5-6
7
8-9
10-11
12-13
Topics
Energy Bands in solids: Charged particles, field intensity,
potential energy, the eV unit of energy, nature of an atom,
atomic energy levels, electronic structure of the elements,
energy band theory of crystals, insulators, semiconductors
and metals.
Transport phenomenon in Semiconductors: mobility and
conductivity, electrons and holes in an intrinsic
semiconductor, donor and acceptor impurities, charge
densities in a semiconductor, electrical properties of Ge
and Si, Hall effect,
Conductivity modulation, generation and recombination of
charges, diffusion, continuity equation, injected minority
carrier charge,
potential variation with a graded semiconductor,
recapitulation
Junction Diode characteristics: Open circuited PN
junction, pn junction as a rectifier, current components in a
pn diode, volt-ampere characteristics, temperature
dependence of the VI characteristics,
Diode resistance, space charge or transition capacitance,
charge control description of a diode, diffusion
capacitance, junction diode switching times.
Transistor Characteristics: Junction transistor, Ebers-Moll
model, transistor current components,
14
Transistor as an amplifier and switch.
15-16
Transistor construction, CB CE configuration,.
17
Transistor in CC Configuration
18
Analytical expressions for transistor characteristics
19-20
Transistor biasing and Thermal Stabilization: Operating
point, bias stability, fixed bias, emitter bias, voltage divider
bias,.
21
Miscellaneous bias circuits
22-23
Stabilization against variations in Ico, Vbe and beta,
th
ST 1 ( 24 -28
th
Text Book (TB),
Ref. Book (RB)
TB 2
Section no., (Page no).
1.1-1.8(1-16)
TB2
2.1-2.6(19-31)
TB2
2.7-2.11(32-41)
TB2
2.12-2.13(43-47)
TB2
TB1
RB1
3.1-3.5(49-61)
1.2(1),1.4(5),1.6 to
1.8(10-20)
2.7(114-132)
TB2
TB1
3.6-3.10(61-73)
1.8-1.11(20-30)
TB2
Link 2
RB1
TB2
TB1
TB2
TB1
Link 1
RB1
TB2
TB1
TB2
5.1 to 5.2(118-124)
TB2
TB1
Link 1
Link 2
TB1
9.1 to 9.3(282-287)
4.2 to 4.6(161-181)
TB2
9.4 to 9.7(290-301)
3.1-3.3(160-201)
5.3(124-125)
3.5(137)
5.4 to 5.10(125-143)
3.2to 3.6(130-137)
3.7(242-265)
5.11(145)
3.7(144)
5.12(145-149)
4.7(181-184)
September 2012)
24
Thermistor and sensistor compensation
TB2
9.8(302-303)
25
Thermal runway and thermal stability
TB2
9.9-9.10(303-309)
26-27
Field Effect Transistors: Construction and characteristics of
JFET, Depletion type MOSFET, Enhancement type MOSFET,
TB1
TB2
6.2 to 6.8(365-385)
10.1, 10.2, 10.5(311-
28
Digital MOSFET circuits
Link 1
Link 2
RB1
TB2
29
FET biasing
TB1
7.2-7.6(406-428)
30-31
Pinch off voltage, VMOS, CMOS, FET as a VVR
TB1
TB2
32-33
Operational Amplifiers: Basic op-amp, differential
amplifier, op amp basics, practical op amp circuits
34-35
Emitter coupled differential amplifier, BIFET,BIMOS, CMOS
Differential amplifier
Op amp specifications-DC offset parameters, frequency
parameters, op amp unit specifications, differential and
common mode operation
Transfer characteristics of differential amplifier, IC
operational amplifier.
temperature drift of input offset voltage and current
TB2
TB1
RB1
TB2
RB1
TB1
6.10to6.1,8.2(394-395,
467),10.8-10.9(335339)
15.1 to15.2(501-505)
10.2 to 10.5(594-613)
5.1 to 5.3(474-489)
15.3(507)
5.4(491-499)
10.6 to 10.9(613-629)
TB2
15.4 to 15.6(517-520)
TB2
15.7-15.9(520-527)
36-37
38-39
40
th
41-42
th
ST 2 ( 5 -9 November 2012)
Optoelectronic devices and Special purpose diodes:
TB1
Photodiode, Phototransistors, LED,
TB2
43
Breakdown diodes
TB2
44
Tunnel Diode
45
GUNN, IMPATT, VARACTOR diodes
TB1
TB2
TB1
th
315,322-328)
4.1 to4.2,4.11 to
4.12(326-349, 436-445)
10.6(328-332)
ST 3 ( 26 -30
th
1.15-1.16(36 40) ,
16.6(816), 17.14 (859)
3.7(66),3.13-3.15(7983),5.14(152)
3.11(73-77)
16.5(812-816)
3.12(77-79), 19.8(743)
16.3(808-811), class
notes
November 2012)
6. Tutorial Plan
Tutorial No
Topics to be covered
1
Semiconductor mobility, conductivity, charge density, drift, diffusion, Fermi level, hall effect
2
PN diode currents, Diode resistance, Diode circuits, Diode characteristics, DC load line
3
Quiz
4
Transistor currents, transistor configurations, input output characteristics, Q point, DC and AC load lines
5
6
Transistor biasing circuits( Fixed bias, collector to base bias, potential divider, base bias circuits with
collector and emitter feedbacks, two supply emitter bias circuits), Stability factors, Bias compensation
circuits
Surprise Test
7
Volt ampere equation of JFET, pinch off voltage, JFET parameters
8
FET configurations, FET biasing ( Fixed bias, self bias, potential divider bias)
9
Assignment Test
10
Differential amplifier, CMRR, op-amp parameters
7.
Evaluation Scheme:
Component 1
Quizzes /Tutorial Test/Surprise Test
20
Component 2*
Sessional Tests (STs)*
20
Component 3**
End Term Examination**
60
Total
100
* Ther e are three Sessional Tests (STs) for all theory papers, the first two are compulsory and the third one is the
non-mandatory make up / mercy test. The average of best two is considered.
** The End Term Compr ehensive examination will be held at the end of semester. The mandatory requirement of
75% attendance in all theory classes is to be met for being eligible to appear in this component.
8.
Details of Evaluation Component 1
Description
Duration
Marks
Remarks
Quiz1
30 min
20
MCQs/On OMR sheets or Online (Closed Book)
Surprise test
30 min
20
Descriptive questions/ On Test sheets (Closed Book).
Quiz2
30 min
20
MCQs/On OMR sheets or Online (Closed Book)
Tutorial test
30 min
20
Analytical questions/On Test sheets (Closed Book).
This Document is approved by:
Designation
Name
Course Coordinator
Mr.Sunil Kumar
HOD
Ms.Pooja Arora
Dy Dean/ Dean
Dr. Rajnish Sharma
Vice Chancellor
Brig(Dr.) RS Grewal
Date
06/06/2012
Signature
ECL4201 Fundamentals of Electronic Devices
Syllabus
Energy Bands in solids: Charged particles, field intensity, potential energy,
the eV unit of energy, nature of an atom, atomic energy levels, electronic
structure of the elements, energy band theory of crystals, insulators,
semiconductors and metals.
Transport phenomenon in Semiconductors: mobility and conductivity,
electrons and holes in an intrinsic semiconductor, donor and acceptor
impurities, charge densities in a semiconductor, electrical properties of Ge
and Si, Hall effect, Conductivity modulation, generation and recombination
of charges, diffusion, continuity equation, injected minority carrier charge,
potential variation with a graded semiconductor, recapitulation
Junction Diode characteristics: Open circuited PN junction, PN junction as a
rectifier, current components in a pn diode, volt-ampere characteristics,
temperature dependence of the VI characteristics, Diode resistance, space
charge or transition capacitance, charge control description of a diode,
diffusion capacitance, junction diode switching times.
Transistor Characteristics: Junction transistor, Ebers-Moll model, transistor
current components, transistor as an amplifier and switch. Transistor
construction, CB CE and CC configuration, analytical expressions for
transistor characteristics.
Transistor biasing and Thermal Stabilization: Operating point, bias stability,
fixed bias, emitter bias, voltage divider bias, miscellaneous bias circuits.,
Stabilization against variations in Ico, Vbe and beta, bias compensation,
thermistor and sensistor compensation, thermal runway and thermal
stability
Field Effect Transistors: Construction and characteristics of JFET, Depletion
type MOSFET, Enhancement type MOSFET, Digital MOSFET circuits, Pinch off
voltage, FET biasing, VMOS, CMOS, FET as a VVR
Operational Amplifiers: Basic op-amp, differential amplifier, op amp basics,
practical op amp circuits, Emitter coupled differential amplifier,BIFET,BIMOS,
CMOS Differential amplifier, Op amp specifications-DC offset parameters,
frequency parameters, op amp unit specifications, differential and common
mode operation, Transfer characteristics of differential amplifier, IC
operational amplifier, temperature drift of input offset voltage and current,
Optoelectronic devices and Special purpose diodes: Photodiode,
Phototransistors, LED, Breakdown diodes, Tunnel diode, GUNN, IMPATT,
VARACTOR diodes.
Total
Total No.
of
Lectures
11
Weightage
14
30%
6
15%
9
20%
5
10%
45
100%
25%