Power Matters.
Overview & Resources
Silicon Carbide Semiconductor Products
Microsemi Corporation has a full silicon carbide (SiC)
wafer fab at its Bend, Oregon site. This facility has a
For more information contact:
25-year history of innovation and manufacturing of high-
SiC Discrete Products
voltage high-frequency power semiconductors and is
Microsemi Corporation
ISO 9001 and JANS certified.
405 SW Columbia Street
In addition to producing discrete SiC semiconductors,
USA
Bend, Oregon 97701
Microsemi has developed a variety of SiC and mixed
+1-541-382-8028
semiconductor power modules. These modules,
incorporating the latest in available technologies, offer
SiC Module Products
rugged operation as well as high efficiency.
Microsemi Corporation
Microsemi has a wide ranging interest in partnering
33520 Bruges, France
26, Rue Campilleau
with customers to provide the best SiC solution for a
+33-557-921-515
specific application.
Extreme Environment Products
F U L L I N - H O U S E C A PA B I L I T I E S
Discrete Products
Microsemi Corporation
6 Lake Street
Low Switching Losses
Lawrence, Massachusetts 01841
Design
+1-978-620-2600
• Silvaco Design and Process Simulator
Discrete Products
•TCAD-TMA
• Mask-Making and Layout
High Power Density
Corporate Office
Microsemi Corporation
High Thermal Conductivity
One Enterprise
• Solid Works & FEA
Aliso Viejo, CA 92656
Process
Reduced Heat Sink Requirements
+1-949-380-6100
• High-Temperature Ion Implantation
High Temperature Operation
sales.support@microsemi.com
• High-Temperature Annealing
www.microsemi.com
• SiC MOSFET Gate Oxide
Reduced Circuit Size and System Costs
• ASML Steppers
• RIE and Plasma Etching
Released
Products
• Sputtered and Evaporated Metal Deposition
Future Products
Analytical and Support
• Atomic Force Microscope
600 Volt
•
•
• n-Spec
Defect
DetectionBarrier
150°C
Rated
Schottky
•SEM/EDAX
Diodes:
10A, 20A, 30A
• Sonoscan
X-ray
150°C
Ratedand
Schottky
Barrier
Diodes: 10A, 20A, 30A
175°C Rated Schottky Barrier
1700V-175° C Rated Schottky
Barrier Diodes: 10A, 20A
Released Products
•
175°C Rated Schottky Barrier
Reliability Testing & Screening
Diodes: 10A, 20A, 30A
1200 Volt
• Wafer Level HTRB/HTGB
•
•
• Thermal Imaging
• HTRB, HTGB, TC, PC, HTOL and 85/85
•
2013
2014
1200V-175°C Rated Schottky
Barrier Diode: 50A
600 Volt
james.kerr 4/22/13 11:21 AM
Deleted:
james.kerr 4/22/13 11:21
Deleted:
Future Products
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
AM
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: sales.support@microsemi.com
PM
www.microsemi.com
2013
james.kerr 4/22/13 12:00
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace
& defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened
analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization
devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete
components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products;
Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is
headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any
particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold
hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment
or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other
testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters
provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information
james.kerr
4/22/13
provided by Microsemi hereunder is provided
“as is, where
is” and with11:21
all faults, AM
and the entire risk associated with such information is entirely with the Buyer.
Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself
Deleted:
or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any
changes to the information in this document or to any products and services at any time without notice.
• 1700V-175° C Rated Schottky
150°C Rated Schottky Barrier
Formatted: Font:12 pt
©2016 Microsemi Corporation. All rights reserved.
• 1200V-175°C Rated MOSFET
Barrier
Diodes:
10A, 20A
Microsemi and the Microsemi
logo are
registered
Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM
trademarks of Microsemi Corporation. All other
•
o
80 milliohm Rdson
Formatted: No bullets or numbering
trademarks and service marks are the property
of their respective owners.
•
james.kerr 4/22/13 11:59 AM
175°C Rated Schottky Barrier
Formatted: Font:12 pt, English (US)
o Diodes:
160 milliohm
Rdson
10A,
20A, 30A james.kerr 4/22/13 11:59 AM
•
1200V-175°C Rated Schottky
Barrier Diode: 50A
SiC 04/16
james.kerr 4/22/13 11:21 AM
Power Matters.
Overview & Resources
Silicon Carbide Semiconductor Products
Microsemi Corporation has a full silicon carbide (SiC)
wafer fab at its Bend, Oregon site. This facility has a
For more information contact:
25-year history of innovation and manufacturing of high-
SiC Discrete Products
voltage high-frequency power semiconductors and is
Microsemi Corporation
ISO 9001 and JANS certified.
405 SW Columbia Street
In addition to producing discrete SiC semiconductors,
USA
Bend, Oregon 97701
Microsemi has developed a variety of SiC and mixed
+1-541-382-8028
semiconductor power modules. These modules,
incorporating the latest in available technologies, offer
SiC Module Products
rugged operation as well as high efficiency.
Microsemi Corporation
Microsemi has a wide ranging interest in partnering
33520 Bruges, France
26, Rue Campilleau
with customers to provide the best SiC solution for a
+33-557-921-515
specific application.
Extreme Environment Products
F U L L I N - H O U S E C A PA B I L I T I E S
Discrete Products
Microsemi Corporation
6 Lake Street
Low Switching Losses
Lawrence, Massachusetts 01841
Design
+1-978-620-2600
• Silvaco Design and Process Simulator
Discrete Products
•TCAD-TMA
• Mask-Making and Layout
High Power Density
Corporate Office
Microsemi Corporation
High Thermal Conductivity
One Enterprise
• Solid Works & FEA
Aliso Viejo, CA 92656
Process
Reduced Heat Sink Requirements
+1-949-380-6100
• High-Temperature Ion Implantation
High Temperature Operation
sales.support@microsemi.com
• High-Temperature Annealing
www.microsemi.com
• SiC MOSFET Gate Oxide
Reduced Circuit Size and System Costs
• ASML Steppers
• RIE and Plasma Etching
Released
Products
• Sputtered and Evaporated Metal Deposition
Future Products
Analytical and Support
• Atomic Force Microscope
600 Volt
•
•
• n-Spec
Defect
DetectionBarrier
150°C
Rated
Schottky
•SEM/EDAX
Diodes:
10A, 20A, 30A
• Sonoscan
X-ray
150°C
Ratedand
Schottky
Barrier
Diodes: 10A, 20A, 30A
175°C Rated Schottky Barrier
1700V-175° C Rated Schottky
Barrier Diodes: 10A, 20A
Released Products
•
175°C Rated Schottky Barrier
Reliability Testing & Screening
Diodes: 10A, 20A, 30A
1200 Volt
• Wafer Level HTRB/HTGB
•
•
• Thermal Imaging
• HTRB, HTGB, TC, PC, HTOL and 85/85
•
2013
2014
1200V-175°C Rated Schottky
Barrier Diode: 50A
600 Volt
james.kerr 4/22/13 11:21 AM
Deleted:
james.kerr 4/22/13 11:21
Deleted:
Future Products
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
AM
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: sales.support@microsemi.com
PM
www.microsemi.com
2013
james.kerr 4/22/13 12:00
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace
& defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened
analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization
devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete
components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products;
Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is
headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any
particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold
hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment
or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other
testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters
provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information
james.kerr
4/22/13
provided by Microsemi hereunder is provided
“as is, where
is” and with11:21
all faults, AM
and the entire risk associated with such information is entirely with the Buyer.
Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself
Deleted:
or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any
changes to the information in this document or to any products and services at any time without notice.
• 1700V-175° C Rated Schottky
150°C Rated Schottky Barrier
Formatted: Font:12 pt
©2016 Microsemi Corporation. All rights reserved.
• 1200V-175°C Rated MOSFET
Barrier
Diodes:
10A, 20A
Microsemi and the Microsemi
logo are
registered
Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM
trademarks of Microsemi Corporation. All other
•
o
80 milliohm Rdson
Formatted: No bullets or numbering
trademarks and service marks are the property
of their respective owners.
•
james.kerr 4/22/13 11:59 AM
175°C Rated Schottky Barrier
Formatted: Font:12 pt, English (US)
o Diodes:
160 milliohm
Rdson
10A,
20A, 30A james.kerr 4/22/13 11:59 AM
•
1200V-175°C Rated Schottky
Barrier Diode: 50A
SiC 04/16
james.kerr 4/22/13 11:21 AM
The Power of Silicon Carbide Semiconductors
Power Modules
Discrete Products
Breakthrough Technology Combines High Performance & Low Losses
SiC Power Module Advantages
Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to
•
•
•
•
High speed switching
Low switching losses
Low input capacitance
Low drive requirements
•
•
•
•
SIC SCHOTTKY DIODES
Low profile
Minimum parasitic inductance
Lower system cost
Increased reliability
Volts
SINGLE
1700
improve system efficiency, smaller form factor and higher operating temperature in products covering industrial,
medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this
game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities.
EXTREMELY LOW SWITCHING LOSSES
Reduction in Losses
•
Zero reverse recovery charge improves
system efficiency
Model Inverter
HIGH POWER DENSITY
•
Smaller footprint device reduces system size and weight
All SiC Solution = 70%
Reduction in Losses
SiC Switch + SiC SBD
HIGH THERMAL CONDUCTIVITY
•
2.5x more thermally conductive than silicon
Switching Losses
IGBT+SiC SBD
Conduction Losses
REDUCED SINK REQUIREMENTS
•
Results in lower cost and smaller size
IGBT + Si FWD
HIGH TEMPERATURE OPERATION
•
Increased power density and improved reliability
0
20
40
60
80
100
AUTOMOTIVE
INDUSTRIAL
AVIATION
DEFENSE
MEDICAL
S TA N D A R D M O D U L E S
P/N
APT2X30DC60J
APT2X40DC60J
APT2X60DC60J
APT2X20DC120J
APT2X50DC120J
APT40DC60HJ
APTDC40H601G
APT20DC120HJ
APTDC20H1201G
APT40DC120HJ
APTSM70TAM60CT3AG
APTSM120TA10CT3AG
APT50SM70JCU2
APT30SM120JCU2
APT100MC120JCU2
APTSM70HM30CT3AG
APTSM120HM50CT3AG
APTMC120HM17CT3AG
APTSM70AM30CT1AG
APTSM70AM15CT3AG
APTSM70AM05CT6AG
APTMC120AM55CT1AG
APTSM120AM55CT1AG
APTMC120AM25CT3AG
APTMC120AM20CT1AG
APTSM120AM25CT3AG
APTMC120AM12CT3AG
APTMC120AM08CD3AG
APTMC120AM09CT3AG
APTSM120AM08CT6AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
APTMC120HRM40CT3AG
APTSM70TAM20CTPAG
APTSM120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
Type
Electrical Topology
Voltage (V)
600
Dual diode
1200
Diode
module
600
Full bridge
1200
3 phase bridge
Boost chopper
700
1200
700
1200
700
Full bridge
1200
700
Mosfet
Module
Phase leg
1200
1700
600
Three level inverter
1200
700
Triple Phase leg
1200
Current (A)
Package Type
30
40
60
20
50
40
40
20
20
40
49
30
49
30
100
97
59
110
97
194
480
40
59
80
100
118
150
185
200
293
40
80
20
40
160
50
146
89
100
150
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SP1
SOT227
SP1
SOT227
SP3F
SP3F
SOT227
SOT227
SOT227
SP3F
SP3F
SP3F
SP1
SP3F
SP6
SP1
SP1
SP3F
SP1
SP3F
SP3F
D3
SP3F
SP6
SP1
SP1
SP3F
SP3F
SP6
SP3F
SP6P
SP6P
SP6P
SP6P
1200
650
DUAL
1200
IF (avg)
Amps
VFvolts
Typ 25° C
Diode
Series
Part
Number
Package Style
10
10
10
20
20
30
30
10
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SCE
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCE170B
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
APT10SCD65K
APT20SCD65K
APT30SCD65B
TO-247
TO-247
TO-220
TO-247
D3
TO-247
D3
TO-220
TO-220
TO-247
2 x 10
1.5
SCD
APT10SCD120BCT
TO-247
SILICON CARBIDE (SIC) MOSFETS
BV(DSS)
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
Part
Number
Package
Style
0.100
35
APT35SM70B
TO-247
0.100
35
APT35SM70S
D3
0.053
70
APT70SM70B
TO-247
0.053
70
APT70SM70S
D3
ISOTOP®
700V
1200V
1700V
0.053
70
APT70SM70J
0.033
130
APT130SM70B
TO-247
0.033
130
APT130SM70J
ISOTOP®
0.140
25
APT25SM120B
TO-247
0.140
25
APT25SM120S
D3
0.080
40
APT40SM120B
TO-247
0.080
40
APT40SM120S
D3
0.080
40
APT40SM120J
ISOTOP®
0.040
80
APT80SM120B
TO-247
0.040
80
APT80SM120S
D3
0.040
80
APT80SM120J
ISOTOP®
0.800
5
APT5SM170B
TO-247
0.800
5
APT5SM170S
D3
Microsemi Patented Technology. Manufactured in Bend, Oregon USA
SiC is the perfect
technology to address
high frequency and high power
density applications
Lower Power Losses
Higher frequency cap.
Higher junction temp.
SIC MOSFETS
Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package)
Characteristics
C U S T O M I Z AT I O N
Microsemi offers a complete engineering solution with mix and match
capabilities in terms of package, interconnection, configuration,
performance and cost.
Out of the existing standard power modules product line, Microsemi can
offer simple, modified or fully customized parts to meet 100% of our
customers’ needs.
•
•
•
•
•
•
Design expertise
High power density
Low profile packages
Extended temperature capabilities
Pin locating flexibility
Mix of Silicon
Easier cooling
Downsized system
Higher Reliability
SiC vs. Si
Results
Benefits
Breakdown field (MV/cm)
10x Higher
Lower On-Resistance
Higher efficiency
Electron sat. velocity (cm/s)
2x Higher
Faster switching
Size reduction
Bandgap energy (ev)
3x Higher
Higher Junction Temperature
Improved cooling
Thermal conductivity (W/m.K)
3x Higher
Higher power density
Higher current capabilities
Positive Temperature coefficient
–
Self regulation
Easy paralleling
Microsemi Advantages
vs. Competition
• Lowest Conduction Losses at High Temperature
• Low Switching Losses
• Highest Short Circuit Withstand Rating
• Lowest Gate Resistance
• Patented SiC Technology
The Power of Silicon Carbide Semiconductors
Power Modules
Discrete Products
Breakthrough Technology Combines High Performance & Low Losses
SiC Power Module Advantages
Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to
•
•
•
•
High speed switching
Low switching losses
Low input capacitance
Low drive requirements
•
•
•
•
SIC SCHOTTKY DIODES
Low profile
Minimum parasitic inductance
Lower system cost
Increased reliability
Volts
SINGLE
1700
improve system efficiency, smaller form factor and higher operating temperature in products covering industrial,
medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this
game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities.
EXTREMELY LOW SWITCHING LOSSES
Reduction in Losses
•
Zero reverse recovery charge improves
system efficiency
Model Inverter
HIGH POWER DENSITY
•
Smaller footprint device reduces system size and weight
All SiC Solution = 70%
Reduction in Losses
SiC Switch + SiC SBD
HIGH THERMAL CONDUCTIVITY
•
2.5x more thermally conductive than silicon
Switching Losses
IGBT+SiC SBD
Conduction Losses
REDUCED SINK REQUIREMENTS
•
Results in lower cost and smaller size
IGBT + Si FWD
HIGH TEMPERATURE OPERATION
•
Increased power density and improved reliability
0
20
40
60
80
100
AUTOMOTIVE
INDUSTRIAL
AVIATION
DEFENSE
MEDICAL
S TA N D A R D M O D U L E S
P/N
APT2X30DC60J
APT2X40DC60J
APT2X60DC60J
APT2X20DC120J
APT2X50DC120J
APT40DC60HJ
APTDC40H601G
APT20DC120HJ
APTDC20H1201G
APT40DC120HJ
APTSM70TAM60CT3AG
APTSM120TA10CT3AG
APT50SM70JCU2
APT30SM120JCU2
APT100MC120JCU2
APTSM70HM30CT3AG
APTSM120HM50CT3AG
APTMC120HM17CT3AG
APTSM70AM30CT1AG
APTSM70AM15CT3AG
APTSM70AM05CT6AG
APTMC120AM55CT1AG
APTSM120AM55CT1AG
APTMC120AM25CT3AG
APTMC120AM20CT1AG
APTSM120AM25CT3AG
APTMC120AM12CT3AG
APTMC120AM08CD3AG
APTMC120AM09CT3AG
APTSM120AM08CT6AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
APTMC120HRM40CT3AG
APTSM70TAM20CTPAG
APTSM120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
Type
Electrical Topology
Voltage (V)
600
Dual diode
1200
Diode
module
600
Full bridge
1200
3 phase bridge
Boost chopper
700
1200
700
1200
700
Full bridge
1200
700
Mosfet
Module
Phase leg
1200
1700
600
Three level inverter
1200
700
Triple Phase leg
1200
Current (A)
Package Type
30
40
60
20
50
40
40
20
20
40
49
30
49
30
100
97
59
110
97
194
480
40
59
80
100
118
150
185
200
293
40
80
20
40
160
50
146
89
100
150
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SP1
SOT227
SP1
SOT227
SP3F
SP3F
SOT227
SOT227
SOT227
SP3F
SP3F
SP3F
SP1
SP3F
SP6
SP1
SP1
SP3F
SP1
SP3F
SP3F
D3
SP3F
SP6
SP1
SP1
SP3F
SP3F
SP6
SP3F
SP6P
SP6P
SP6P
SP6P
1200
650
DUAL
1200
IF (avg)
Amps
VFvolts
Typ 25° C
Diode
Series
Part
Number
Package Style
10
10
10
20
20
30
30
10
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SCE
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCE170B
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
APT10SCD65K
APT20SCD65K
APT30SCD65B
TO-247
TO-247
TO-220
TO-247
D3
TO-247
D3
TO-220
TO-220
TO-247
2 x 10
1.5
SCD
APT10SCD120BCT
TO-247
SILICON CARBIDE (SIC) MOSFETS
BV(DSS)
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
Part
Number
Package
Style
0.100
35
APT35SM70B
TO-247
0.100
35
APT35SM70S
D3
0.053
70
APT70SM70B
TO-247
0.053
70
APT70SM70S
D3
ISOTOP®
700V
1200V
1700V
0.053
70
APT70SM70J
0.033
130
APT130SM70B
TO-247
0.033
130
APT130SM70J
ISOTOP®
0.140
25
APT25SM120B
TO-247
0.140
25
APT25SM120S
D3
0.080
40
APT40SM120B
TO-247
0.080
40
APT40SM120S
D3
0.080
40
APT40SM120J
ISOTOP®
0.040
80
APT80SM120B
TO-247
0.040
80
APT80SM120S
D3
0.040
80
APT80SM120J
ISOTOP®
0.800
5
APT5SM170B
TO-247
0.800
5
APT5SM170S
D3
Microsemi Patented Technology. Manufactured in Bend, Oregon USA
SiC is the perfect
technology to address
high frequency and high power
density applications
Lower Power Losses
Higher frequency cap.
Higher junction temp.
SIC MOSFETS
Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package)
Characteristics
C U S T O M I Z AT I O N
Microsemi offers a complete engineering solution with mix and match
capabilities in terms of package, interconnection, configuration,
performance and cost.
Out of the existing standard power modules product line, Microsemi can
offer simple, modified or fully customized parts to meet 100% of our
customers’ needs.
•
•
•
•
•
•
Design expertise
High power density
Low profile packages
Extended temperature capabilities
Pin locating flexibility
Mix of Silicon
Easier cooling
Downsized system
Higher Reliability
SiC vs. Si
Results
Benefits
Breakdown field (MV/cm)
10x Higher
Lower On-Resistance
Higher efficiency
Electron sat. velocity (cm/s)
2x Higher
Faster switching
Size reduction
Bandgap energy (ev)
3x Higher
Higher Junction Temperature
Improved cooling
Thermal conductivity (W/m.K)
3x Higher
Higher power density
Higher current capabilities
Positive Temperature coefficient
–
Self regulation
Easy paralleling
Microsemi Advantages
vs. Competition
• Lowest Conduction Losses at High Temperature
• Low Switching Losses
• Highest Short Circuit Withstand Rating
• Lowest Gate Resistance
• Patented SiC Technology
The Power of Silicon Carbide Semiconductors
Power Modules
Discrete Products
Breakthrough Technology Combines High Performance & Low Losses
SiC Power Module Advantages
Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to
•
•
•
•
High speed switching
Low switching losses
Low input capacitance
Low drive requirements
•
•
•
•
SIC SCHOTTKY DIODES
Low profile
Minimum parasitic inductance
Lower system cost
Increased reliability
Volts
SINGLE
1700
improve system efficiency, smaller form factor and higher operating temperature in products covering industrial,
medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this
game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities.
EXTREMELY LOW SWITCHING LOSSES
Reduction in Losses
•
Zero reverse recovery charge improves
system efficiency
Model Inverter
HIGH POWER DENSITY
•
Smaller footprint device reduces system size and weight
All SiC Solution = 70%
Reduction in Losses
SiC Switch + SiC SBD
HIGH THERMAL CONDUCTIVITY
•
2.5x more thermally conductive than silicon
Switching Losses
IGBT+SiC SBD
Conduction Losses
REDUCED SINK REQUIREMENTS
•
Results in lower cost and smaller size
IGBT + Si FWD
HIGH TEMPERATURE OPERATION
•
Increased power density and improved reliability
0
20
40
60
80
100
AUTOMOTIVE
INDUSTRIAL
AVIATION
DEFENSE
MEDICAL
S TA N D A R D M O D U L E S
P/N
APT2X30DC60J
APT2X40DC60J
APT2X60DC60J
APT2X20DC120J
APT2X50DC120J
APT40DC60HJ
APTDC40H601G
APT20DC120HJ
APTDC20H1201G
APT40DC120HJ
APTSM70TAM60CT3AG
APTSM120TA10CT3AG
APT50SM70JCU2
APT30SM120JCU2
APT100MC120JCU2
APTSM70HM30CT3AG
APTSM120HM50CT3AG
APTMC120HM17CT3AG
APTSM70AM30CT1AG
APTSM70AM15CT3AG
APTSM70AM05CT6AG
APTMC120AM55CT1AG
APTSM120AM55CT1AG
APTMC120AM25CT3AG
APTMC120AM20CT1AG
APTSM120AM25CT3AG
APTMC120AM12CT3AG
APTMC120AM08CD3AG
APTMC120AM09CT3AG
APTSM120AM08CT6AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
APTMC120HRM40CT3AG
APTSM70TAM20CTPAG
APTSM120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
Type
Electrical Topology
Voltage (V)
600
Dual diode
1200
Diode
module
600
Full bridge
1200
3 phase bridge
Boost chopper
700
1200
700
1200
700
Full bridge
1200
700
Mosfet
Module
Phase leg
1200
1700
600
Three level inverter
1200
700
Triple Phase leg
1200
Current (A)
Package Type
30
40
60
20
50
40
40
20
20
40
49
30
49
30
100
97
59
110
97
194
480
40
59
80
100
118
150
185
200
293
40
80
20
40
160
50
146
89
100
150
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SP1
SOT227
SP1
SOT227
SP3F
SP3F
SOT227
SOT227
SOT227
SP3F
SP3F
SP3F
SP1
SP3F
SP6
SP1
SP1
SP3F
SP1
SP3F
SP3F
D3
SP3F
SP6
SP1
SP1
SP3F
SP3F
SP6
SP3F
SP6P
SP6P
SP6P
SP6P
1200
650
DUAL
1200
IF (avg)
Amps
VFvolts
Typ 25° C
Diode
Series
Part
Number
Package Style
10
10
10
20
20
30
30
10
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SCE
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCE170B
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
APT10SCD65K
APT20SCD65K
APT30SCD65B
TO-247
TO-247
TO-220
TO-247
D3
TO-247
D3
TO-220
TO-220
TO-247
2 x 10
1.5
SCD
APT10SCD120BCT
TO-247
SILICON CARBIDE (SIC) MOSFETS
BV(DSS)
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
Part
Number
Package
Style
0.100
35
APT35SM70B
TO-247
0.100
35
APT35SM70S
D3
0.053
70
APT70SM70B
TO-247
0.053
70
APT70SM70S
D3
ISOTOP®
700V
1200V
1700V
0.053
70
APT70SM70J
0.033
130
APT130SM70B
TO-247
0.033
130
APT130SM70J
ISOTOP®
0.140
25
APT25SM120B
TO-247
0.140
25
APT25SM120S
D3
0.080
40
APT40SM120B
TO-247
0.080
40
APT40SM120S
D3
0.080
40
APT40SM120J
ISOTOP®
0.040
80
APT80SM120B
TO-247
0.040
80
APT80SM120S
D3
0.040
80
APT80SM120J
ISOTOP®
0.800
5
APT5SM170B
TO-247
0.800
5
APT5SM170S
D3
Microsemi Patented Technology. Manufactured in Bend, Oregon USA
SiC is the perfect
technology to address
high frequency and high power
density applications
Lower Power Losses
Higher frequency cap.
Higher junction temp.
SIC MOSFETS
Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package)
Characteristics
C U S T O M I Z AT I O N
Microsemi offers a complete engineering solution with mix and match
capabilities in terms of package, interconnection, configuration,
performance and cost.
Out of the existing standard power modules product line, Microsemi can
offer simple, modified or fully customized parts to meet 100% of our
customers’ needs.
•
•
•
•
•
•
Design expertise
High power density
Low profile packages
Extended temperature capabilities
Pin locating flexibility
Mix of Silicon
Easier cooling
Downsized system
Higher Reliability
SiC vs. Si
Results
Benefits
Breakdown field (MV/cm)
10x Higher
Lower On-Resistance
Higher efficiency
Electron sat. velocity (cm/s)
2x Higher
Faster switching
Size reduction
Bandgap energy (ev)
3x Higher
Higher Junction Temperature
Improved cooling
Thermal conductivity (W/m.K)
3x Higher
Higher power density
Higher current capabilities
Positive Temperature coefficient
–
Self regulation
Easy paralleling
Microsemi Advantages
vs. Competition
• Lowest Conduction Losses at High Temperature
• Low Switching Losses
• Highest Short Circuit Withstand Rating
• Lowest Gate Resistance
• Patented SiC Technology
Power Matters.
Overview & Resources
Silicon Carbide Semiconductor Products
Microsemi Corporation has a full silicon carbide (SiC)
wafer fab at its Bend, Oregon site. This facility has a
For more information contact:
25-year history of innovation and manufacturing of high-
SiC Discrete Products
voltage high-frequency power semiconductors and is
Microsemi Corporation
ISO 9001 and JANS certified.
405 SW Columbia Street
In addition to producing discrete SiC semiconductors,
USA
Bend, Oregon 97701
Microsemi has developed a variety of SiC and mixed
+1-541-382-8028
semiconductor power modules. These modules,
incorporating the latest in available technologies, offer
SiC Module Products
rugged operation as well as high efficiency.
Microsemi Corporation
Microsemi has a wide ranging interest in partnering
33520 Bruges, France
26, Rue Campilleau
with customers to provide the best SiC solution for a
+33-557-921-515
specific application.
Extreme Environment Products
F U L L I N - H O U S E C A PA B I L I T I E S
Discrete Products
Microsemi Corporation
6 Lake Street
Low Switching Losses
Lawrence, Massachusetts 01841
Design
+1-978-620-2600
• Silvaco Design and Process Simulator
Discrete Products
•TCAD-TMA
• Mask-Making and Layout
High Power Density
Corporate Office
Microsemi Corporation
High Thermal Conductivity
One Enterprise
• Solid Works & FEA
Aliso Viejo, CA 92656
Process
Reduced Heat Sink Requirements
+1-949-380-6100
• High-Temperature Ion Implantation
High Temperature Operation
sales.support@microsemi.com
• High-Temperature Annealing
www.microsemi.com
• SiC MOSFET Gate Oxide
Reduced Circuit Size and System Costs
• ASML Steppers
• RIE and Plasma Etching
Released
Products
• Sputtered and Evaporated Metal Deposition
Future Products
Analytical and Support
• Atomic Force Microscope
600 Volt
•
•
• n-Spec
Defect
DetectionBarrier
150°C
Rated
Schottky
•SEM/EDAX
Diodes:
10A, 20A, 30A
• Sonoscan
X-ray
150°C
Ratedand
Schottky
Barrier
Diodes: 10A, 20A, 30A
175°C Rated Schottky Barrier
1700V-175° C Rated Schottky
Barrier Diodes: 10A, 20A
Released Products
•
175°C Rated Schottky Barrier
Reliability Testing & Screening
Diodes: 10A, 20A, 30A
1200 Volt
• Wafer Level HTRB/HTGB
•
•
• Thermal Imaging
• HTRB, HTGB, TC, PC, HTOL and 85/85
•
2013
2014
1200V-175°C Rated Schottky
Barrier Diode: 50A
600 Volt
james.kerr 4/22/13 11:21 AM
Deleted:
james.kerr 4/22/13 11:21
Deleted:
Future Products
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo, CA 92656 USA
Within the USA: +1 (800) 713-4113
AM
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
email: sales.support@microsemi.com
PM
www.microsemi.com
2013
james.kerr 4/22/13 12:00
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace
& defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened
analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization
devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete
components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products;
Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is
headquartered in Aliso Viejo, Calif., and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any
particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold
hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment
or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other
testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters
provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information
james.kerr
4/22/13
provided by Microsemi hereunder is provided
“as is, where
is” and with11:21
all faults, AM
and the entire risk associated with such information is entirely with the Buyer.
Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself
Deleted:
or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any
changes to the information in this document or to any products and services at any time without notice.
• 1700V-175° C Rated Schottky
150°C Rated Schottky Barrier
Formatted: Font:12 pt
©2016 Microsemi Corporation. All rights reserved.
• 1200V-175°C Rated MOSFET
Barrier
Diodes:
10A, 20A
Microsemi and the Microsemi
logo are
registered
Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM
trademarks of Microsemi Corporation. All other
•
o
80 milliohm Rdson
Formatted: No bullets or numbering
trademarks and service marks are the property
of their respective owners.
•
james.kerr 4/22/13 11:59 AM
175°C Rated Schottky Barrier
Formatted: Font:12 pt, English (US)
o Diodes:
160 milliohm
Rdson
10A,
20A, 30A james.kerr 4/22/13 11:59 AM
•
1200V-175°C Rated Schottky
Barrier Diode: 50A
SiC 04/16
james.kerr 4/22/13 11:21 AM
