Power Matters.
Silicon Carbide Semiconductor Products
Low Switching Losses
High Power Density
High Thermal Conductivity
Reduced Heat Sink Requirements
High Temperature Operation
Reduced Circuit Size and System Costs
Your Global Source for RF, Wireless, Energy & Power Technologies
www.richardsonrfpd.com | 800.737.6937 | 630.262.6800
Overview & Resources
Microsemi Corporation has a full silicon carbide (SiC)
wafer fab at its Bend, Oregon site. This facility has a
25-year history of innovation and manufacturing of highvoltage high-frequency power semiconductors and is
ISO 9001 and JANS certified.
In addition to producing discrete SiC semiconductors,
Microsemi has developed a variety of SiC and mixed
semiconductor power modules. These modules,
incorporating the latest in available technologies, offer
rugged operation as well as high efficiency.
Microsemi has a wide ranging interest in partnering
with customers to provide the best SiC solution for a
specific application.
F U L L I N - H O U S E C A PA B I L I T I E S
Discrete Products
Design
•
Silvaco Design and Process Simulator
•
TCAD-TMA
•
Mask-Making and Layout
•
Solid Works & FEA
Disc
Process
•
High-Temperature Ion Implantation
•
High-Temperature Annealing
•
SiC MOSFET Gate Oxide
•
ASML Steppers
•
RIE and Plasma Etching
Released
Products
• Sputtered and Evaporated Metal Deposition
Future Products
Analytical and Support
• Atomic Force Microscope
600 Volt
•
•
• n-Spec
Defect
DetectionBarrier
150°C
Rated
Schottky
• SEM/EDAX
Diodes:
10A, 20A, 30A
•
Thermal Imaging
•
HTRB, HTGB, TC, PC, HTOL and 85/85
•
•
• Sonoscan
X-ray
150°C
Ratedand
Schottky
Barrier
Diodes: 10A, 20A, 30A
175°C Rated Schottky Barrier
Diodes: 10A, 20A, 30A
SiC Powermite
•
Smallest footprint in the industry
•
Powermite 1 and Powermite 3
1700V-175° C Rated Schottky
Barrier Diodes: 10A, 20A
Released Products
•
175°C Rated Schottky Barrier
Reliability Testing & Screening
Diodes: 10A, 20A, 30A
1200 Volt
• Wafer Level HTRB/HTGB
•
2013
2014
1200V-175°C Rated Schottky
Barrier Diode: 50A
600 Volt
james.kerr 4/22/13 11:21 AM
Deleted:
james.kerr 4/22/13 11:21
Deleted:
Microsemi
One Enterpr
Within the U
AM
Outside the
Sales: +1 (9
Fax: +1 (949
email: sales
PM
www.micros
2013
james.kerr 4/22/13 12:00
•
150°C Rated Schottky Barrier
Formatted: Font:12 pt
©2016 Micro
• 1200V-175°C Rated MOSFET
Microsemi an
Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:27 AM
trademarks o
•
o
80 milliohm Rdson
Formatted: No bullets or numberin
trademarks a
of their respe
•
james.kerr 4/22/13 11:59 AM
175°C Rated Schottky Barrier
Formatted: Font:12 pt, English (US
o Diodes:
160 milliohm
Rdson
10A,
20A, 30A james.kerr 4/22/13 11:59 AM
•
•
1700V-175°C Rated MOSFET
1200 Volt
Formatted: Font:12 pt
2014
james.kerr 4/22/13 11:59 AM
Formatted: Font:12 pt, English (US
Your Global Source
for RF,
Wireless,
EnergyBarrier
&Unknown
Power Technologies
• 150°C
Rated
Schottky
Font:12 pt
www.richardsonrfpd.com | 800.737.6937Formatted:
| 630.262.6800
Diodes: 10A, 20A, 30A james.kerr 4/22/13 11:59 AM
Formatted: Font:12 pt
•
The Power of Silicon Carbide Semiconductors
Breakthrough Technology Combines High Performance & Low Losses
Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to
improve system efficiency, smaller form factor and higher operating temperature in products covering industrial,
medical, mil-aerospace and communication market segments. Microsemi is proud to be at the forefront of this
game changing technology with a comprehensive portfolio of SiC solutions and in-house fabrication capabilities.
EXTREMELY LOW SWITCHING LOSSES
Reduction in Losses
• Zero reverse recovery charge improves
system efficiency
Model Inverter
HIGH POWER DENSITY
• Smaller footprint device reduces system size
and weight
All SiC Solution = 70%
Reduction in Losses
SiC Switch + SiC SBD
HIGH THERMAL CONDUCTIVITY
• 2.5x more thermally conductive than silicon
Switching Losses
IGBT+SiC SBD
Conduction Losses
REDUCED SINK REQUIREMENTS
• Results in lower cost and smaller size
IGBT + Si FWD
HIGH TEMPERATURE OPERATION
• Increased power density and improved
reliability
AUTOMOTIVE
0
INDUSTRIAL
AVIATION
20
40
60
DEFENSE
80
100
MEDICAL
Your Global Source for RF, Wireless, Energy & Power Technologies
www.richardsonrfpd.com | 800.737.6937 | 630.262.6800
s
Power Modules
SiC Power Module Advantages
•
•
•
•
High speed switching
Low switching losses
Low input capacitance
Low drive requirements
•
•
•
•
Low profile
Minimum parasitic inductance
Lower system cost
Increased reliability
S TA N D A R D M O D U L E S
P/N
APT2X30DC60J
APT2X40DC60J
APT2X60DC60J
APT2X20DC120J
APT2X50DC120J
APT40DC60HJ
APTDC40H601G
APT20DC120HJ
APTDC20H1201G
APT40DC120HJ
APTSM70TAM60CT3AG
APTSM120TA10CT3AG
APT50SM70JCU2
APT30SM120JCU2
APT100MC120JCU2
APTSM70HM30CT3AG
APTSM120HM50CT3AG
APTMC120HM17CT3AG
APTSM70AM30CT1AG
APTSM70AM15CT3AG
APTSM70AM05CT6AG
APTMC120AM55CT1AG
APTSM120AM55CT1AG
APTMC120AM25CT3AG
APTMC120AM20CT1AG
APTSM120AM25CT3AG
APTMC120AM12CT3AG
APTMC120AM08CD3AG
APTMC120AM09CT3AG
APTSM120AM08CT6AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
APTMC120HRM40CT3AG
APTSM70TAM20CTPAG
APTSM120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
Type
Electrical Topology
Voltage (V)
600
Dual diode
1200
Diode
module
600
Full bridge
1200
3 phase bridge
Boost chopper
700
1200
700
1200
700
Full bridge
1200
700
Mosfet
Module
Phase leg
1200
1700
600
Three level inverter
1200
700
Triple Phase leg
1200
Current (A)
Package Type
30
40
60
20
50
40
40
20
20
40
49
30
49
30
100
97
59
110
97
194
480
40
59
80
100
118
150
185
200
293
40
80
20
40
160
50
146
89
100
150
SOT227
SOT227
SOT227
SOT227
SOT227
SOT227
SP1
SOT227
SP1
SOT227
SP3F
SP3F
SOT227
SOT227
SOT227
SP3F
SP3F
SP3F
SP1
SP3F
SP6
SP1
SP1
SP3F
SP1
SP3F
SP3F
D3
SP3F
SP6
SP1
SP1
SP3F
SP3F
SP6
SP3F
SP6P
SP6P
SP6P
SP6P
Optional Materials: • AlN substrate • Si3N4 Substrate • AlSiC base plate material • Temperature sensor • Press fit terminals (for SP3 package)
C U S T O M I Z AT I O N
Microsemi offers a complete engineering solution with mix and match
capabilities in terms of package, interconnection, configuration,
performance and cost.
Out of the existing standard power modules product line, Microsemi can
offer simple, modified or fully customized parts to meet 100% of our
customers’ needs.
•
•
•
•
•
•
Design expertise
High power density
Low profile packages
Extended temperature capabilities
Pin locating flexibility
Mix of Silicon
Your Global Source for RF, Wireless, Energy & Power Technologies
www.richardsonrfpd.com | 800.737.6937 | 630.262.6800
Mic
vs.
Discrete Products
SIC SCHOTTKY DIODES
Volts
SINGLE
1700
1200
650
DUAL
1200
IF (avg)
Amps
VFvolts
Typ 25° C
Diode
Series
Part
Number
Package Style
10
10
10
20
20
30
30
10
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SCE
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCE170B
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
APT10SCD65K
APT20SCD65K
APT30SCD65B
TO-247
TO-247
TO-220
TO-247
D3
TO-247
D3
TO-220
TO-220
TO-247
2 x 10
1.5
SCD
APT10SCD120BCT
TO-247
SILICON CARBIDE (SIC) MOSFETS
BV(DSS)
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
Part
Number
Package
Style
0.100
35
APT35SM70B
TO-247
0.100
35
APT35SM70S
D3
0.053
70
APT70SM70B
TO-247
0.053
70
APT70SM70S
D3
0.053
70
APT70SM70J
ISOTOP®
0.033
130
APT130SM70B
TO-247
0.033
130
APT130SM70J
ISOTOP®
0.140
25
APT25SM120B
TO-247
0.140
25
APT25SM120S
D3
0.080
40
APT40SM120B
TO-247
0.080
40
APT40SM120S
D3
0.080
40
APT40SM120J
ISOTOP®
0.040
80
APT80SM120B
TO-247
0.040
80
APT80SM120S
D3
0.040
80
APT80SM120J
ISOTOP®
0.800
5
APT5SM170B
TO-247
0.800
5
APT5SM170S
D3
700V
1200V
1700V
Microsemi Patented Technology. Manufactured in Bend, Oregon USA
SiC is the perfect
technology to address
high frequency and high power
density applications
Lower Power Losses
Higher frequency cap.
Higher junction temp.
Easier cooling
Downsized system
Higher Reliability
SIC MOSFETS
Characteristics
SiC vs. Si
Results
Benefits
Breakdown field (MV/cm)
10x Higher
Lower On-Resistance
Higher efficiency
Electron sat. velocity (cm/s)
2x Higher
Faster switching
Size reduction
Bandgap energy (ev)
3x Higher
Higher Junction Temperature
Improved cooling
Thermal conductivity (W/m.K)
3x Higher
Higher power density
Higher current capabilities
Positive Temperature coefficient
–
Self regulation
Easy paralleling
Microsemi Advantages
vs. Competition
• Lowest Conduction Losses at High Temperature
• Low Switching Losses
• Highest Short Circuit Withstand Rating
• Lowest Gate Resistance
• Patented SiC Technology
Your Global Source for RF, Wireless, Energy & Power Technologies
www.richardsonrfpd.com | 800.737.6937 | 630.262.6800