RF Manual 14th edition
Application and design manual
for High Performance RF products
May 2010
© 2010 NXP B.V.
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: May 2010
Document order number: 9397 750 16881
Printed in the Netherlands
RF Manual 14th edition
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
High Performance RF for the most demanding applications
NXP’s RF Manual makes
design work much easier
NXP’s RF Manual – one of the most important reference tools on the market for
today’s RF designers – features our complete range of RF products, from low to
high power signal conditioning & high speed data converters.
What’s new?
This RF Manual features new applications, such as: point-to-point communication, radar, VSAT, MoCA
(Multimedia over Coax Alliance), NIM (Network Interface Module for TV reception), Digital Satellite Set-top-box
RF (Plasma) lighting, medical imaging, microwave furnaces and Mobile platforms. And we describe thoroughly new
developments in our main technologies SiGe:C QUBiC and LDMOS.
New products families have been added to our broad portfolio, like: Quad pin diodes, 6th and 7th generation SiGe:C
wideband transistors, variable gain amplifiers, LNA's for wireless infrastructures, LNA’s and MOSFETs for STB and a
full line-up of high speed converters. And of course the latest additions and improvements are included: GPS LNA’s,
medium power amplifiers, LO generators and CATV modules.
Our base station offering has grown extensively by e.g. a comprehensive set of best in class Doherty amplifier designs,
a broad selection of medium power, variable gain and low noise amplifiers and our JESD204A-compliant, high speed
DACs and ADCs.
Last but not least, we expanded our cross reference list with 40% to over 1.200 items.
A strong foundation in RF
Shipping billions of RF products annually, NXP is a true industry leader in high performance RF. Our RF small signal
products are widely installed in satellites, cellular base stations, mobile devices, cars, TV tuners and CATV. We’re a
leader in high power RF for cellular infrastructure, broadcast/ISM and Radar applications. With our new, serialized
signal processing architectures with JESD204A-compliant high-speed converters, we are enabling a transition to more
compact, higher performance systems.
Our IP extends far beyond our packaged products to our patented high performance processes. From high-power
LDMOS for power amplifiers, CMOS processes for our high-speed converters, and the most advanced SiGe:C (QUBiC4)
for RF small signal transistors, MMICs and ICs. Our in-house process and technology portfolio sets us apart.
What’s more, producing over 65 million units per day, we control our front- and back-end manufacturing quality and cost
structures with internal 8-inch IC fabs in the Netherlands and Singapore and assembly plants in Thailand, Taiwan and
China. Our processses are all AEC100 certified for supply into the most quality-conscious customers and applications.
4
NXP Semiconductors RF Manual 14th edition
NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
“I’m proud to present the latest edition of our RF Manual. It covers NXP’s entire range of RF products in one comprehensive manual,
and I’m convinced that you’ll find the 14th edition even more useful in your daily design work.”
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
NXP Semiconductors RF Manual 14th edition
5
Contents
1.1 Mobile Communication Infrastructure_________________________________________________________________ 9
1.1.1 Base stations (all cellular standards and frequencies) ______________________________________________ 9
1.1.2 Point-to-point________________________________________________________________________________ 12
1.2 Microwave & mmWave_____________________________________________________________________________ 14
1.2.1 VSAT________________________________________________________________________________________ 14
1.2.2Microwave products for Avionics, L- and S-band Radar applications _______________________________ 16
1.3 Fixed Communication Infrastructure_________________________________________________________________ 18
1.3.1 CATV optical (optical node with multiple out-ports) ______________________________________________ 18
1.3.2CATV electrical (line extenders) ________________________________________________________________ 19
1.3.3Broadcast / ISM (industrial, scientific & medical) _________________________________________________ 20
1.4 TV, NIM (STB) and Satellite_________________________________________________________________________ 21
1.4.1 Network interface module (NIM) for TV reception________________________________________________ 21
1.4.2Basic TV tuner________________________________________________________________________________ 23
1.4.3 MoCA (Multimedia over Coax Alliance)__________________________________________________________ 24
1.4.4Satellite outdoor unit, low noise block (LNB) for multiple users_____________________________________ 25
1.4.5Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV_ ________________________________ 26
1.4.6 Digital Satellite Set Top Box (high definition)_____________________________________________________ 27
1.5 Consumer Mobile__________________________________________________________________________________ 28
1.5.1 Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB / LTE)____________________________ 28
1.5.2A 2.4 & 5 GHz front-end for WLAN (802.11n Dual Concurrent) _____________________________________ 29
1.5.32-way radio / family radio system_______________________________________________________________ 30
1.5.4DECT front-end / DECT in-house base station___________________________________________________ 31
1.6 Automotive & Industrial____________________________________________________________________________ 32
1.6.1 Active antenna_______________________________________________________________________________ 32
1.6.2Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission_______ 33
1.6.3Tire pressure monitoring system_______________________________________________________________ 34
1.6.4Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) __________________________________________ 35
1.6.5E-metering, RF generic front-end with a single antenna / ZigBee___________________________________ 36
1.6.6RF Plasma Lighting___________________________________________________________________________ 37
1.6.7 Medical Imaging______________________________________________________________________________ 38
1.6.8 RF Microwave furnace application______________________________________________________________ 39
2. Technologies & focus products_____________________________________________________________________ 40
2.1 Get the fastest TTFF with GPS LNAs that use proven QUBiC4X SiGe:C_ ____________________________ 40
2.2 Always the right match with our latest 6th and 7th generation SiGe:C wideband transistors_____________ 41
2.3 NXP Medium-Power MMICs BGA7xxx for broadband applications_________________________________ 42
2.4 Low-noise LO generators for microwave & mmWave radios________________________________________ 43
2.5 Complete satellite portfolio for all LNB architectures_ ____________________________________________ 44
2.6 VSAT, 2-way communication via satellite_________________________________________________________ 46
2.7 NXP CATV C-family for the Chinese SARFT standard_ ____________________________________________ 48
2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C_______________________________ 51
2.8 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks _____________________ 52
2.9 Doherty amplifier technology for state-of-art wireless infrastructure________________________________ 54
2.10 Boost efficiency and lower system cost in wireless infrastructure with GaN__________________________ 56
2.11 Looking for the leader in SiGe:C? You've just found us!_ __________________________________________ 57
2.12 Microwave / Radar____________________________________________________________________________ 59
2.13 Digital broadcasting at its best_________________________________________________________________ 61
6
NXP Semiconductors RF Manual 14th edition
3. Product portfolio__________________________________________________________________________________
3.1 New products________________________________________________________________________________
3.2 RF diodes____________________________________________________________________________________
3.2.1 Varicap diodes _______________________________________________________________________________
3.2.2PIN diodes __________________________________________________________________________________
3.2.3Band-switch diodes___________________________________________________________________________
3.2.4Schottky diodes______________________________________________________________________________
3.3 RF Bipolar transistors _________________________________________________________________________
3.3.1 Wideband transistors _________________________________________________________________________
3.4 RF ICs_______________________________________________________________________________________
3.4.1 MMICs______________________________________________________________________________________
3.4.2 Low noise LO generators for VSAT and general microwave applications_____________________________
3.5 RF MOS transistors __________________________________________________________________________
3.5.1 JFETs _ _____________________________________________________________________________________
3.5.2MOSFETs ___________________________________________________________________________________
3.6 RF Modules _________________________________________________________________________________
3.6.1 CATV Reverse Hybrids ________________________________________________________________________
3.6.2CATV Push-Pulls _____________________________________________________________________________
3.6.3CATV power doublers ________________________________________________________________________
3.6.4CATV optical receivers________________________________________________________________________
4.
5.
6.
7.
8.
9.
62
62
64
64
65
67
67
68
68
71
71
73
74
74
76
78
78
78
79
79
3.7 RF power transistors _________________________________________________________________________ 80
3.7.1 Base Station transistors _ _____________________________________________________________________ 80
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors _______________________________ 83
3.7.3 Microwave LDMOS RF power transistors ________________________________________________________ 84
3.8 High Speed Data Converters _ ________________________________________________________________ 85
3.8.1 High Speed ADCs ____________________________________________________________________________ 85
3.8.2 High Speed DACs ____________________________________________________________________________ 85
Design support_ __________________________________________________________________________________ 86
4.1 S-Parameters ________________________________________________________________________________ 86
4.2 Simulation models____________________________________________________________________________ 86
4.2.1Spice models _ ______________________________________________________________________________ 86
4.2.2RF Power device simulation models_____________________________________________________________ 87
4.3 Application notes_____________________________________________________________________________ 87
4.4 Demo boards_ _______________________________________________________________________________ 87
4.4.1 IC, MMIC and SiGe:C transistor demo boards____________________________________________________ 87
4.4.2 RF power transistor demo boards_ _____________________________________________________________ 87
4.4.3 High Speed Converter demo boards____________________________________________________________ 88
4.5 Samples of products in development ____________________________________________________________ 88
4.6 Samples of released products _________________________________________________________________ 88
4.7 Datasheets __________________________________________________________________________________ 88
4.8 Design-in support ____________________________________________________________________________ 88
4.9 NEW: interactive selection guides _ ____________________________________________________________ 88
Cross-references & replacements___________________________________________________________________ 89
5.1 Cross-references: Manufacturer types versus NXP types__________________________________________ 89
5.2 Cross-references: NXP discontinued types versus NXP replacement types__________________________ 98
Packing and packaging information________________________________________________________________ 100
6.1 Packing quantities per package with relevant ordering code______________________________________ 100
6.2 Marking codes list___________________________________________________________________________ 102
Abbreviations____________________________________________________________________________________ 104
Contacts and web links___________________________________________________________________________ 105
Product index____________________________________________________________________________________ 106
NXP Semiconductors RF Manual 14th edition
7
8
NXP Semiconductors RF Manual 14th edition
1.1 Mobile Communication Infrastructure
1.1.1 Base stations (all cellular standards and frequencies)
See also brochure: 'Your partner in Mobile Communication Infrastructure design': document number: 9397 750 16837.
Application diagram
LPF
SER I-DAC
SIGNAL
PROCESSING
PLL
PLL VCO
IQ MIXER
MIXER
0
VGA
TX BPF
RF POWER BOARD
MPA
HPA
ISOLATOR
90
LPF
INTERFACING
SER Q-DAC
MIXER
BPF
VGA
SER ADC
ANTENNA
TX/RX
mixer
TOWER
MOUNTED
AMPLIFIER
PLL VCO
µC
LPF
VGA
SER I-ADC
PLL
PLL VCO
LPF
SER Q-ADC
DUPLEXER
IQ MIXER
MIXER
0
µC
LNA
RX BPF
LNA
90
VGA
MIXER
Processing
Dataconverters
RF small signal
RF power
brb411
Above diagram shows a simplified base station block diagram with its two main branches: transmit (upper half, TX) and receive (lower half, RX).
Walking along the transmit branch, after the interfacing into the signal processing part, one first encounters the digital to analog converters (DAC), which include a
serial interface in our case (SER). The transmit signal then passes a low-pass filter block (LPF) and is being upconverted in the IQ mixer stage. Next follows a variable
gain amplifier (VGA), a bandpass filter (TX BPF) and the power amplifier board with a medium power amplifier- (MPA) and the high power amplifier (HPA)stages.
An isolater and duplexer are the last two basic blocks up to the antenna. A feedback line is provided to monitor the transmitted signal. The TX signal is “sampled”,
down-converted in a mixer, amplified (VGA), bandpassfiltered (BPF) and converted to digital by an analog to digital converter (SER ADC), with a high speed serial
interface.
The main RX branch of the base station starts at the duplexer, is amplified by a low noise amplifier (LNA) and band pass filtered (RX BPF) very close to the antenna in
a “tower mounted amplifier”. A further amplifier (LNA) then feeds into the down conversion mixer; the I and Q base band signals are further amplified (VGA) and via
a low pass filter (LPF) fed into the respective ADC’s (SER I-ADC and SER Q-DAC).
The serial interface in turn connects to the base band signal processing unit. The synchronizing “heartbeats” in the diagram are controlled by phase locked loops
(PLL) with or without a voltage controlled oscillator (VCO). Microcontrollers (μC) provide local control and monitoring functions within the building blocks.
The colored building blocks can all be sourced by NXP and are discussed in the following paragraphs.
NXP Semiconductors RF Manual 14th edition
9
Recommended products
Function
frange
Sub function
10 - 2200
700 - 1000
700 - 1000
688 - 1000
1800 - 2000
1805 - 1880
1805 - 1880
1805 - 1880
2100 - 2200
2010 - 2025
2110 - 2170
driver
MMIC driver
final
HPA
(high power
amplifier - single
transistors)
final
final
final
final
MMIC driver
integrated Doherty driver
final
2000 - 2200
final
final
driver
2110 - 2170
2300 - 2400
driver
final
HPA
(high power
amplifier - Doherty
designs)
BLF6G21-10G
BLM6G10-30
BLF6G10-160RN
BLF6G10-200RN
BLF6G20-230PRN
BLF7G20L(S)-200
BLF7G20L(S)-250P
BLF7G20L(S)-300P
BLM6G22-30
BLD6G21L-50
BLD6G22L-50
BLF7G22L-130
BLF6G22-180PN
BLF6G22-180RN
BLF7G22L(S)-200
BLF7G24L(S)-100(G)
BLF6G27-10
BLF6G27-135
BLF7G27L-200P
BLF6G38-10
BLF6G38-100
2500 - 2700
final
Function
Type
MHz
3400 - 3600
ηD
Gp
W
%
dB
0.6
2
32
40
65
50
70
85
2
8
8
30
50
40
55
24
2
20
20
2
18.5
15
11.5
27
28.5
32
30
30
30
9
42
38
32
27.5
25
17
18
20
22.5
25
20
21.5
18.5
29
22.5
20
17.5
17
17
17
29.5
13.5
13.3
18.5
17.5
16
28
28
19
16
16.5
14
13
Mode of operation
WCDMA. TD-SCDMA. GSM. EDGE
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
TD-SCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WiMAX
WiMAX
WiMAX
WiMAX
WiMAX
Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
Main transistor
Peak transistor
728-768
869-894
925-960
1805-1880
1930-1990
2110-2170
2300-2400
2500-2700
3400-3600
58
58
58.9
58.2
58
58
49.5
52.5
51
50
50
50
50
50
50
42
44.5
43
32
32
32
28
32
32
28
28
28
19
19
22
16
15.5
15
14.5
14
11.5
47
46
44
42
37
40
43
38
32
SYM
SYM
SYM / MMPP
SYM / MPPM
SYM
SYM
SYM
SYM
SYM
BLF6G10LS-200RN
BLF6G10-200RN
1/2 BLF6G10-260PRN
BLF7G20LS-250P
BLF6G20-230PRN
BLF6G22-180PN
1/2 BLF7G27-75P
1/2 BLF6G27-150P
BLF6G38-50
BLF6G10LS-200RN
BLF6G10-200RN
1/2 BLF6G10-260PRN
BLF7G20LS-250P
BLF6G20-230PRN
BLF6G22-180PN
1/2 BLF7G27-75P
1/2 BLF7G27-150P
BLF6G38-50
Product highlight:
high power transistor BLF7G20L(S)-300P
NXP's LDMOS Gen6 and Gen7 enable the world's most efficient base
station designs by combining very high intrinsic (Si technology) and
extrinsic (amplifier design) efficiencies. Gen7 is specifically designed
for Doherty amplifiers.
10
PL(AV)
NXP Semiconductors RF Manual 14th edition
Features
`` unrivalled ruggedness
`` very consistent device performance
`` highest Doherty amplifier efficiencies to date
`` 300 W peak power; 35 W average power in push pull package
`` low thermal resistance design for very reliable operation
Function
Discrete
attenuator
Function
Product
RF diode
PIN diode
Product
RF transistor
LNA (low noise
amplifier) &
Mixer
Function
VGA
(variable gain
amplifier)
Function
RF MMIC
SiGe:C
transistor
SiGe:C MMIC
Product
MMIC
SiGe:C MMIC
Product
MMIC
Type
BAP64Q
BAP70Q
BAP64
Package
Type
SOT343F
BFU725F/N1
SOT650
BGU7051
BGU7052
BGU7053
BGU7054
Package
MMIC
MPA
(medium power
amplifier)
Package
SOT753
SOT753
Various^
SiGe:C MMIC
SOT617
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
SOT908
Type
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Type
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
* = check status at 3.1 new products, as this type has not been released yet
for mass production.
^ = SOD523, SOD323, SOT23 & SOT323
Function
Sub function
Max. sampling
frequency
dual channel DAC
Dataconverters
single channel ADC
dual channel ADC
Type
# of bits
Interface
650 Msps
DAC1405D650
14
LVCMOS
160 Msps
DAC1405D160
14
LVCMOS
125 Msps
DAC1401D125
14
LVCMOS
750 Msps
DAC1408D750
14
JESD204A
80 Msps
ADC1207S080
12
LVCMOS
125 Msps
ADC1415S125
14
LVCMOS&LVDS DDR
125 Msps
ADC1410S125
14
LVCMOS&LVDS DDR
125 Msps
ADC1412D125
14
LVCMOS&LVDS DDR
125 Msps
ADC1413D125
14
JES204A
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package.
It delivers 25 dBm output power at 1 dB gain compression and a
superior performance for various narrowband-tuned application
circuits for frequencies up to 2700 MHz.
Features
`` 400 MHz to 2700 MHz frequency operating range
`` 16 dB small signal gain at 2 GHz
`` 27 dBm output power at 1 dB gain compression
`` Integrated active biasing
`` 3.3 V / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 μA shutdown mode
NXP Semiconductors RF Manual 14th edition
11
1.1.2 Point-to-point
Application diagram
INDOOR UNIT
POWER
SUPPLY
OUTDOOR UNIT
PLL VCO
0
IF
MPA
VGA1
VGA1
PA
MPA
BPF
90
BUF
DIGITAL
SIGNAL
PROCESSOR
REF
MPX
PMU
PLL VCO
0
90
ANALOG
VGA
VGA2
Product
Function
Product
MMIC
Package
SiGe:C
MMIC
SOT617
Package
MMIC
SOT89
SiGe:C
MMIC
SOT908
SOT89
SOT908
SOT89
MMIC
SOT908
Product
Package
IF gain block
SiGe:C
MMIC
MMIC
General
purpose
wideband
amplifiers
IF
Product
RF MMIC
LNA
RF transistor
SiGe:C
MMIC
Wideband
transistor
Product
VGA 2
(variable gain
amplifier)
MMIC
SOT363
Package
SOT891
SiGe:C
transistor
Function
PLL
ANTENNA
PLL
IF1
VGA2
SiGe:C
MMIC
SOT650
SOT343F
Type
BGA7202*
BGA7203*
BGA7204*
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
BGA2714
BGA2748
BGA2771
Type
BGU7003
BGU7051*
BGU7052*
BGU7053*
BGU7054*
BFU725F/N1
SOT143R
BFG425W
BFG424W
BFG325/XR
Package
Type
SOT343R
BGA7350*
SOT617
BGA7351*
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
12
PMU
SYNTH
LNA2 LNA1
VGA1
brb406
Function
VGA 1
(variable gain
amplifier)
Function
REF
LNA
Recommended products
Indoor unit
Function
MPX
LPF
DATA
INTERFACE
MPA (medium
power
amplifier)
to/from
IDU
NXP Semiconductors RF Manual 14th edition
Outdoor unit
Function
VGA 1
(variable gain
amplifier)
Function
MPA (medium
power
amplifier)
Product
Package
BGA7202*
MMIC
SiGe:C
MMIC
SOT617
Buffer
Function
Product
Package
MMIC
SOT89
SiGe:C
MMIC
SOT908
SOT89
SOT908
SOT89
MMIC
Product
RF transistor
SiGe:C
transistor
Product
RF transistor
LNA 2
MMIC
Function
BGA7203*
BGA7204*
SOT908
Function
Type
SiGe:C
transistor
SiGe:C
MMIC
Product
IF gain block
Package
Type
SOT343F
BFU725F/N1
Package
Type
SOT343F
BFU725F/N1
SOT891
BGU7003
Package
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
SiGe:C
MMIC
SOT363
IF 1
MMIC
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
General
purpose
wideband
amplifiers
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a lowcost ultra small SOT908 leadless package. It delivers 25 dBm output
power at 1 dB gain compression and a superior performance for
various narrowband-tuned application circuits for frequencies up to
2700 MHz.
Function
VGA 2
(variable gain
amplifier)
Function
PLL
Function
Oscillator
Function
Synth
Product
Package
SiGe:C
MMIC
MMIC
Product
SOT617
Package
RF IC
SiGe:C IC
Product
SOT616
Package
RF transistor
Wideband
transistor
SiGe:C
transistor
Product
RF diode
Varicap
diode
SOT343R
SOT343F
Type
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Type
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Type
BFG424W
BFG425W
BFU725F/N1
Package
Type
SOD523
BB202
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Features
`` 400 MHz to 2700 MHz frequency operating range
`` 16 dB small signal gain at 2 GHz
`` 27 dBm output power at 1 dB gain compression
`` Integrated active biasing
`` 3.3 V / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 μA shutdown mode
NXP Semiconductors RF Manual 14th edition
13
1.2 Microwave & mmWave
1.2.1 VSAT
Application diagram
OUTDOOR UNIT
INDOOR UNIT
IF
POWER
SUPPLY
PA
IF1
MOD
BUF
DIGITAL
SIGNAL
PROCESSOR
REF
MPX
to/from
IDU
REF
MPX
PMU
PMU
LNA
IF2
SYNTH
PLL
´N
PLL
OMT
ANTENNA
BUF
DATA
INTERFACE
IF1
DEMOD
Product
IF gain block
SiGe:C MMIC
MMIC
General purpose
wideband
amplifiers
IF
Function
Product
LNA
14
LNA1
brb405
Recommended products VSAT
Indoor unit
Function
LNA2
Package
Type
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
BGA2714
BGA2748
BGA2771
Package
Type
SiGe:C transistor
SOT343F
Wideband
transistor
SOT343R
BFU725F/N1
BFG425W
BFG424W
BFG325/XR
RF transistor
NXP Semiconductors RF Manual 14th edition
SOT143R
Recommended products VSAT
Outdoor unit
Function
Product
IF gain block
Function
Function
RF transistor
MMIC
SiGe:C transistor
SiGe:C MMIC
Product
PLL
Function
Oscillator
Function
Synth
Function
Buffer
RF IC
SiGe:C IC
Product
RF transistor
Type
BFU725F/N1
BGU7003
Package
Type
SOT616
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Package
Type
BFG424W
BFG425W
BFU725F/N1
SOT343F
Package
Type
Varicap diode
SOD523
BB202
Package
Type
SiGe:C transistor
SOT343F
BFU725F/N1
Product
RF transistor
Package
SOT343F
SOT891
Wideband
transistor
SiGe:C transistor
Product
RF diode
SOT363
General purpose
wideband
amplifiers
Product
LNA2
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
SiGe:C MMIC
IF
MMIC
Package
SOT343R
* = check status at 3.1 new products, as this type has not been released yet for mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Product highlight:
TFF1003HN
The TFF1003HN is a Ku band frequency generator intended for
low phase noise Local Oscillator (LO) circuits for Ku band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
Features
`` Phase noise compliant with IESS-308 (Intelsat)
`` LO generator with VCO range from 12.8 GHz to 13.05 GHz
`` Input signal 50 MHz to 815 MHz
`` Divider settings 16, 32, 64, 128 or 256
NXP Semiconductors RF Manual 14th edition
15
1.2.2 Microwave products for Avionics, L- and S-band Radar applications
Application diagram
RF signals
video, timing, bias voltage,
control and data
I-f signals
RF small signal
ANTENNA
DRIVE
RF POWER BOARD
RF power
PLL VCO
MPA
mixer
HPA
ISOLATOR
VGA
local oscillator
duplexer
DISPLAY
AND
CONTROL
WAVEFORM
GENERATOR
local oscillator signal
PLL VCO
control and timing
video
mixer
DETECTOR
LNA
IF amplifier
brb410
Recommended products
Application
16
Function
Name
Package
MHz
W
%
dB
V
Avionics
power
transistors
driver
final
final
final
BLL6H0514-25
BLA6H0912-500
BLA6H1011-600
BLA6G1011-200R
SOT467C
SOT634A
SOT539A
SOT502A2
500 - 1400
960 - 1215
1030 - 1090
1030 - 1090
25 (min)
450
600
200
50
50
52
65
19
17
19
20
50
50
50
28
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
L-Band
power
transistors
driver
final
final
final
BLL6H0514-25
BLL6H1214-500
BLL6H1214L(S)-250
BLL6HL(S)0514-130
SOT467C
SOT539A
SOT502
SOT1135
500 - 1400
1200 - 1400
1200 - 1400
500 - 1400
25 (min)
500 (min)
250
130
50
50
55
50
19
17
17
18
50
50
50
50
PULSED RF; class AB
PULSED RF; class AB
Pulsed RF
Pulsed RF
S-band
power
transistors
driver
driver
driver
final
final
final
final
final
final
final
final
BLS6G2731-6G
BLS6G3135-20
BLS6G3135S-20
BLS6G2731-120
BLS6G2731S-120
BLS6G2933S-130
BLS6G3135-120
BLS6G3135S-120
BLS7G2933P-200
BLS7G2731P-200
BLS6G2731S-130
SOT975C
SOT608A
SOT608B
SOT502A
SOT502B
SOT922-1
SOT502A
SOT502B
pallet
pallet
SOT922
2700 - 3100
3100 - 3500
3100 - 3500
2700 - 3100
2700 - 3100
2900 - 3300
3100 - 3500
3100 - 3500
2900 - 3300
2700 - 3100
2700 - 3100
6
20
20
120
120
130
120
120
200
200
130
33
45
45
48
48
47
43
43
45
45
49
15
15.5
15.5
13.5
13.5
12.5
11
11
11
11
13
32
32
32
32
32
32
32
32
32
32
32
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
Pulsed RF
NXP Semiconductors RF Manual 14th edition
Function
Discrete attenuator
Product
RF diode
PIN diode
Package
Type
Various^
BAP64
Package
Type
SOT343F
BFU725F/N1
^ = SOD523, SOD323, SOT23 & SOT323
Function
LNA (low noise
amplifier) & Mixer
Function
Product
RF transistor
SiGe:C transistor
Product
Package
Type
SOT363
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
SiGe:C MMIC
IF amplifier
MMIC
General purpose
wideband
amplifiers
Function
PLL/VCO
LO generator
Function
VGA
(variable gain
amplifier)
Function
MPA
(medium power
amplifier)
Product
RF IC
SiGe:C IC
Product
MMIC
Type
SOT616
TFF1003HN
TFF1007HN*
TFF11xxxHN*^
Package
SiGe:C MMIC
Product
MMIC
Package
SOT617
Type
BGA7202*
BGA7203*
BGA7204*
BGA7350*
BGA7351*
Package
SiGe:C MMIC
MMIC
SOT908
SOT89
SOT908
SOT89
SOT908
SOT908
SOT89
Type
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
BGA6589
* = check status at 3.1 new products, as this type has not been released yet for mass production.
^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.2
Product highlight:
The BLS6G2933P-200 is the first LDMOS based, industry standard
pallet available on the market. This pallet offers more than 40%
efficiency includes the complete bias network and can be used
as direct replacement for current solutions.
Features
`` P1 dB> 200 W
`` Efficiency > 40%
`` Industry standard footprint
`` 50 Ω in/out matched for entire bandwidth
`` Lightweight heat sink included
NXP Semiconductors RF Manual 14th edition
17
1.3 Fixed Communication Infrastructure
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.
1.3.1 CATV optical (optical node with multiple out-ports)
Application diagram
RF power
amplifier
duplex
filter
coax out
port 1
RF forward
receiver
fiber in
RF preamplifier
splitter
coax out
port 2
coax out
port 3
coax out
port 4
bra852
Recommended products
Function
Product
RF forward
receiver
Function
Forward
path receiver
Product
RF
pre-amplifier
Function
RF power
amplifier
Frequency
870 MHz
Frequency
Push-Pulls
870 MHz
Power doubler
870 MHz
Product
Power
doublers
Frequency
870 MHz
Package
SOT115
SOT115
SOT115
Type
BGO807
BGO807CE
BGO827
Gain (dB)
18 - 19
21 - 22
18.2 - 18.8
Type
BGY885A
BGY887
BGD812
Gain (dB)
20.5 - 22.5
23 - 25
Type
CGD942C
CGD944C
Product highlight:
BGO807CE
BGO807CE is an integrated optical receiver module that provides
high output levels and includes an integrated temperature
compensated circuitry. In your optical node design, BGO807CE
enables a high performance/ price ratio and ruggedness. When
upgrading an HFC network from analog to digital our BGO807CE
is the perfect fit.
18
NXP Semiconductors RF Manual 14th edition
Features
`` E xcellent linearity
`` Low noise
`` E xcellent flatness
`` Standard CATV outline
`` Rugged construction
`` Gold metallization ensures excellent reliability
`` High optical input power range
1.3.2 CATV electrical (line extenders)
Application diagram
duplex
filter
RF preamplifier
RF power
amplifier
duplex
filter
coax in
coax out
RF reverse
amplifier
bra505
Recommended products
Function
Product
Frequency
550 MHz
600 MHz
750 MHz
RF
pre-amplifier
Push-Pulls
870 MHz
1000 MHz
Function
RF reverse
amplifier
Product
Reverse
hybrids
Frequency
5-75 MHz
5-120 MHz
5-200 MHz
Gain (dB)
33.5 - 35.5
33.5 - 35.5
26.2 - 27.8
21 - 22
33.5 - 35.2
33.5 - 34.5
18 - 19
21 - 22
18 - 19
21 - 22
33.5 - 34.5
34.5 - 36.5
18 - 19
22
24
28
29
32
Type
BGY588N
BGY588C
BGY587B
BGY687
BGE788C
BGE788
BGY785A
BGY787
BGY885A
BGY887
BGY888
CGY888C
BGY1085A
CGY1041*
CGY1043*
CGY1047
CGY1049*
CGY1032*
Gain (dB)
29.2 - 30.8
24.5 - 25.5
23.5 - 24.5
Type
BGY68
BGY66B
BGY67A
Function
Product
Frequency
550 MHz
750 MHz
RF power
amplifier
Power
doublers
870 MHz
1000 MHz
Gain (dB)
18-19
19.5 - 20.5
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18 - 19
18.2 - 18.8
19.7 - 20.3
20.5 - 22.5
23 - 25
21
23
23
25
25
26
Type
BGD502
BGD704
BGD712
BGD712C
BGD714
BGD802
BGD812
BGD814
CGD942C
CGD944C
CGD1040Hi
CGD1042H
CGD1042Hi
CGD1044H
CGD1044Hi
CGD1046Hi*
All available in SOT115 package.
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
Product highlight:
CGD1046Hi
CGD1046Hi* with a very high-output power level is primarily
designed for use in fiber deep-optical-node applications (N+1/2/3).
This 1 GHz hybrid amplifier solution offers an extended temperature
range, high power overstress capabilities in case of surges and high
ESD levels resulting in a low cost of ownership. It’s designed for
durability and offering superior ruggedness.
Features
`` High-output power
`` High power gain for power doublers
`` Extremely low noise
`` Dark Green products
`` GaAs HFET dies for high-end applications
`` Rugged construction
`` Superior levels of ESD protection
`` Integrated ringwave protection
`` Design optimized for digital channel loading
`` Temperature compensated gain response
`` Optimized heat management
`` Excellent temperature resistance
NXP Semiconductors RF Manual 14th edition
19
1.3.3 Broadcast / ISM (industrial, scientific & medical)
Application diagram
typ. 0.5 kW
DVB-T
Driver stages
harmonic
filter
TV exciter
DVB-T
typ. 5 kW DVB-T
output power
power
monitor
8 × final
amplifiers
Recommended products
Function
Type
driver
BLF871(S)
driver
BLF881(S)
driver
final
final
BLF571
BLF573(S)
BLF574
final
BLF578
final
BLF645
final
BLF878
final
BLF888
final
BLF888A(S)
final
BLF177
BLF278
frange
PL(AV)
nD
Gp
MHz
W
%
dB
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1400
0 - 1400
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
28 - 108
108 - 225
100
24
140
33
20
300
500
1200
1000
100
100
75
300
250
110
250
115
150
250 - 300
47
33
49
34
70
70
70
71
75
45
56
32
46
46
31
46
32
>35
50 - 80
21
22
21
21
27.5
27.2
26.5
24
26
18
18
21
21
19
19
19
19
20
14 - 20
Product highlight:
NXP’s 50 V high voltage LDMOS process enables highest power
and unequalled ruggedness.
BLF888A: delivers the highest power level for digital broadcasting
available to date. 20
NXP Semiconductors RF Manual 14th edition
Features
Mode of operation
2-TONE
DVB-T
2-TONE
DVB-T
CW
CW
CW
PULSED RF
CW
2-TONE
CW
DVB-T
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
CW class AB
CW class AB
`` Best broadband efficiency
`` Highest power devices
`` Unrivalled ruggedness
`` Low-thermal resistance design for very reliable operation
`` Very consistent device performance
1.4 TV, NIM (STB) and Satellite
Note: looking for TV on Mobile? See chapter 1.5.1 Handset.
1.4.1 Network interface module (NIM) for TV reception
Application diagram
RF input
VGA
surge
CONVENTIONAL
TUNER OR
SILICON TUNER
RF SW
WB LNA
RF output
Make a high performance active splitter in a NIM tuner
with BGU703x.
Nowadays more flexibility in design and more complicated
signal handling is required for a TV tuner. A front-end of
a TV signal receiver is no longer just a tuned receiver, but
has evolved into a RF Network Interface Module (NIM) with
tuned demodulators, active splitters and re-modulators. The
active splitter requires an LNA with excellent linearity. We
have developed a new series of LNA/ VGA MMICs (BGU703x)
designed specifically for high linearity (IP3O of 29 dBm) in low
noise applications like an active splitter in a NIM tuner.
brb403
Save energy with BF11x8
The BF11x8 series are small signal RF switching MOSFETs
which can be used for switching RF signals up to 1 GHz. With
the use of the BF11x8 series as a RF switch you can save a
considerable amount of energy. When a recording device
(DVD-R, HDD-R, VCR, DVR) is powered off people can remain
watching TV, although the antenna is looped via the recording
device. Without using BF11x8 the antenna signal is lost. At the
moment the power of the recording device is on, the BF11x8
is open, so the RF signal travels via the recording device to
the TV tuner. At the moment the power of the recording
device is completely off, the BF11x8 closes. This ensures that
the RF signal is looped through directly to the TV tuner and
that TV reception is guaranteed. Energy is saved because the
recording device can be powered off.
NXP Semiconductors RF Manual 14th edition
21
Recommended products
Function
Product
5V Silicon RF
switch
RF Switch /
PLT switch
MOSFET
3.3V Silicon
RF Switch
Package
SOT23
SOT143B
SOT143R
SOT343
SOT343R
SOT143B
SOT143R
SOT343
SOT343R
Type
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
Note: Using the BF1108 as passive loop through switch between the RF input
and output of a NIM tuner can save considerable energy. For example, when the
HDR is not in used, the TV signal can still be distributed to the TV without having
to power up the active splitter circuit in the HDR. That is because the BF1108 RF
switch is closed when no power is supplied to it, and is open when it is powered
on. For 3.3 V applications, the BF1118 can be used instead.
Function
Product
VGA
RF BiMOS
MMIC
LNA
RF bipolar
transistor
Package
Type
Wideband
transistor
with gain
levels of 5 dB
and 10 dB,
plus a bypass
mode.
SOT363
BGU7033*^
Wideband
transistor
with gain
level of 10dB
and a bypass
mode.
SOT363
BGU7032*^
Wideband
transistor
with gain
level of 10dB
SOT363
BGU7031*^
SOT143
BFG520
BFG540
BFQ540
Wideband
transistor
SOT89
Function
AGC control
amplifier
Product
MOSFET
2 – in – 1 with
band switch
@ 5V
2 – in – 1
@ 5V
5V
Package
Type
SOT363
BF1215
SOT363
BF1216
SOT343
BF1217
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation higher. That way, the
MOSFET would not be constantly under AGC even under nominal RF input level.
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = this new series of LNA MMICs is designed specifically for high linearity (IP3O
of 29 dBm), low noise application like those in an active splitter or NIM tuner.
Housed in a 6-pin SOT363 plastic SMD package, these MMICs are equipped
with internal bias and matched to 75 ohms internally. For the VGAs, current
consumption is < 5mA during the bypass mode. Only 2 external components are
needed, thus saving precious circuit board space!
Product highlight:
BF11x8 silicon RF switch, MOSFET
This switch is a combination of a depletion type field-effect transistor
and a band switching diode in an SOT143 or SOT343 package.
The low insertion loss and high isolation capabilities of this device
provide excellent RF switching functions. The gate of the MOSFET
can be isolated from ground with the diode, resulting in low losses.
Integrated diodes between gate and source and between gate and
drain protect against excessive input voltage surges.
22
NXP Semiconductors RF Manual 14th edition
Features
`` Specially designed for low loss RF switching up to 1 GHz
`` Easy to design-in
`` Power ON: low losses
`` Power OFF: high isolation
`` ON or OFF, ZERO power consumption
1.4.2 Basic TV tuner
Application diagram
MOSFET
RF input
From antenna,
cable, active splitter,
etc.
MOPLL
IC
IF
VAGC
bra500
Recommended products
Function
Product
VHF low
Input filter
Varicap
diode
VHF high
UHF
Function
Product
5V
RF
pre-amplifier
MOSFET
2-in-1 @ 5 V
V
2-in-1 @ 3 V
Package
SOD323
SOD523
SOD882T
SOD323
SOD523
SOD523
SOD882T
SOD882T
SOD323
SOD882T
SOD523
SOD523
Type
BB152
BB182
BB182LX
BB153
BB178
BB187
BB178LX
BB187LX
BB149A
BB179LX
BB179
BB189
Function
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT666
SOT363
SOT363
SOT363
SOT666
Type
BF1201
BF1202
BF1105
BF1211
BF1212
BF1102R
BF1203
BF1204
BF1205
BF1205C
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1214
BF1218
BF1206F
Function
Product highlight: BF1206F dual gate mosfet double
amplifier specified for low power applications
The device consists of two dual gate mosfet amplifiers in a small
SOT666 flatlead package. The BF1206F is a true low power device
specified for low voltage and low currents, intended for use in mobile
applications where power consumption is critical. Performance
is suitable for application at supply voltages of 3 Volts and
draincurrents of 4 mA.
Product
VHF low
Bandpass
filter
Varicap
diode
VHF high
UHF
Product
VHF low
Oscillator
Varicap
diode
VHF high
UHF
Function
RF
pre-amplifier
Product
MOSFET
Package
SOD323
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD523
Type
BB152
BB182LX
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Package
SOD323
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD882T
SOD523
SOD323
SOD882T
SOD523
SOD523
Type
BB152
BB182LX
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
BB189
Package
Type
2-in-1 with
band switch
@ 5V
SOT363
BF1215
2-in-1 @ 5V
SOT363
BF1216
5V
SOT343
BF1217
Features
`` Low power specified
`` Two amplifiers in one small SOT666 package
`` Shared gate 2 and Source leads
`` Each amplifier is biased by an external bias resistor
`` E xcellent noise and crossmodulation performance
NXP Semiconductors RF Manual 14th edition
23
1.4.3 MoCA (Multimedia over Coax Alliance)
Application diagram
PA
Cable
Connection
LPF
BALUN
Diplexer/
BPF
T/R
Tx
ON/OFF
Switched
1 Bit Attenuator
15 dB
MoCA
Chip
BALUN
Rx
ON/OFF
brb401
Recommended products
Function
Product
SPDT switch
Function
RF diode
PIN diode
Product
PA (power
amplifier)
MMIC
SiGe:C
MMIC
Package
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOD822T
Type
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64LX
Package
SOT908
SOT89
SOT908
SOT89
Type
BGA7124
BGA7024
BGA7127
BGA7027
Product highlight:
medium power amplifier BGA7124 MMIC
The BGA7124 MMIC is a one-stage driver amplifier, offered in a lowcost ultra small SOT908 leadless package. It delivers 25 dBm output
power at 1 dB gain compression and a superior performance for
various narrowband-tuned application circuits for frequencies up to
2700 MHz.
24
NXP Semiconductors RF Manual 14th edition
Features
`` 400 MHz to 2700 MHz frequency operating range
`` 16 dB small signal gain at 2 GHz
`` 27 dBm output power at 1 dB gain compression
`` Integrated active biasing
`` 3.3 V / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 μA shutdown mode
1.4.4 Satellite outdoor unit, low noise block (LNB) for multiple users
Application diagram
horizontal
1st
antenna stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
H low
IF amplifier
oscillator
low
mixer
BIAS IC
V low
mixer
IF amplifier
H high
(4 x 2)
IF
SWITCH
IF
amplifier
IF out 1
IF amplifier
vertical
antenna
high
oscillator
IF
amplifier
V high
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
IF amplifier
IF out 2
brb022
Recommended products
Function
Oscillator
Product
RF bipolar
transistor
RF transistor
Function
Wideband
transistor
SiGe:C
transistor
Product
General
purpose
amplifier
1st stage
IF
amplifier
MMIC
IF gain block
RF bipolar
transistor
Function
IF switch
Wideband
transistor
Product
RF diode
PIN diode
Package
SOT343
SOT343F
Type
BFG424W
BFG424F
SOT343F
BFU725F/N1
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343F
Type
BGA2711
BGA2712
BGA2748
BGA2714
BGA2717
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BFG424W
BFG424F
Package
various
various
various
various
various
Type
BAP64^
BAP51^
BAP1321^
BAP50^
BAP63^
Function
Product
General
purpose
amplifier
Output
stage IF
amplifier
MMIC
IF gain block#
RF bipolar
transistor
Wideband
transistor
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Type
BGA2709
BGA2776
BGM1014
BGM1012
BGA2716
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
SOT343
BFG325
# = When using one of our IF gain blocks (BGA28xx) as output stage IF amplifier,
you do not need an output inductor anymore.
Function
Product
3 stage LNA
RF transistor
Function
Product
rd
Mixer
RF transistor
SiGe:C
transistor
SiGe:C
transistor
Package
Type
SOT343F
BFU725F/N1
Package
Type
SOT343F
BFU725F/N1
^ = also available in ultra small leadless package SOD882T.
Product highlight:
BGA28xx-family, IF gain blocks
The BGA28xx IF gain blocks are Silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
Features
`` Internally matched to 50 Ω
`` Reverse isolation > 30 dB up to 2 GHz
`` Good linearity with low second order and third order products
`` Unconditionally stable (K > 1)
NXP Semiconductors RF Manual 14th edition
25
1.4.5 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
input
terrestrial
amplifier
input
terrestrial
satellite dishe(s)
input
amplifiers
LNB
output
amplifiers
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
coax out to STB
coax out to STB
coax out to STB
brb023
Recommended products
Function
Product
Input
amplifier
terrestrial
Function
MMIC
Package
General
purpose
medium
power
amplifier
Product
MMIC
Input
amplifier
LNB
RF bipolar
transistor
General
purpose
amplifier
Wideband
transistor
SiGe:C
transistor
Function
Product
Switch
matrix
SOT89
SOT908
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
Package
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343
SOT143
SOT143
Type
BGA2771
BGA2776
BGA2709
BGM1012
BFG325
BFG425W
BFG520
BFG540
SOT343F
BFU725F/N1
Package
Type
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
RF diode
PIN diode
Various
RF transistor
SiGe:C
transistor
SOT343F
Function
Product
MMIC
Package
General
purpose
medium
power
amplifier
General
purpose
amplifier
Output
amplifier
RF bipolar
transistor
Wideband
transistor
SiGe:C
transistor
SOT908
SOT363
SOT363
SOT363
SOT223
SOT223
SOT223
SOT143
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
BGM1011
BGM1013
BGM1014
BFG135
BFG 591
BFG198
BFG540
SOT343F
BFU725F/N1
SOT89
BFU725F/N1
^ = also available in ultra small leadless package SOD882T.
Product highlight:
PIN diodes for switching matrix
Together with outstanding RF performance, this component simplify
design-in because of its extremely low forward resistance, diode
capacitance and series inductance. Significant board space saving
by supplying a range of high compact package options – including
SOD523, SOD323 and leadless SOD882T.
26
NXP Semiconductors RF Manual 14th edition
Features
`` High isolation, low distortion, low insertion loss
`` Low forward resistance (Rd) and diode capacitance (Cd)
`` Ultra-small package options
1.4.6 Digital Satellite Set Top Box (high definition)
Application diagram
Coax-in
(HD)
Satellite
System
on Chip
(SoC)
Balun
brb435
Recommended products
Function
LNA
Product
MMIC
Package
Medium
Power
Amplifier
SOT89
Type
BGA6289
BGA6489
BGA6589
Product highlight:
BGA6489 MMIC medium power amplifier
Features
`` 20 dBm output power
`` Single supply voltage needed
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
medium power amplifier with internal matching circuit in a 4-pin
SOT89 plastic low thermal resistance SMD package.
The BGA6489 provides high-quality performance in satellite
applications from 250 MHz - 2.15 GHz.
NXP Semiconductors RF Manual 14th edition
27
1.5 Consumer Mobile
Note: looking for MoCA and Satellite Multi Switch Boxes? See chapter 1.4 TV, STB and Satellite.
1.5.1 Mobile Platforms (GPS / TV on mobile / FM radio / Reference clock / CMMB^ / LTE)
^ = Chinese Multimedia Mobile Broadcasting (CMMB)
Application diagram
LNA
MULTI-BAND
TRANSCEIVER
LNA
Vref
FM RADIO
TRANSCEIVER
LNA
VCTCXO
CLK BUFFER
GPS RECEIVER
GPS RF
BB
PROCESSING
GPS BB
Vref
LNA
CMMB DECODER
ANALOG TV RECEIVER
LNA
TUNER
DECODER
VIDEO PROCESSOR
APPLICATION
brb402
Recommended products
Function
Product
LTE LNA
Function
MMIC
SiGe:C
MMIC
Product
FM radio
LNA
Function
Transistor
Product
GPS LNA
Function
MMIC
CMMB LNA
MMIC
Type
BGU7003
Package
Wideband
transistor
SiGe:C MMIC
J-FET
Frequency
SiGe:C
MMIC
Product
Transistor
Package
SOT891
Wideband
transistor
SiGe:C
transistor
SiGe:C MMIC
SOT891
SOT23
Type
BFR93AW
BFS505
BGU7003
BF510
Package
SOT891
SOT886
SOT886
Type
BGU7003
BGU7005
BGU7007*
Package
Type
SOT343
BFG425W
SOT323
SOT343F
BFU725F/N1
SOT891
BGU7003
Function
TV on Mobile
LNA
Product
Transistor
MMIC
Function
TV on
Mobile
tuning diode
Function
Reference
clock
Product
RF diode
Product
CLK buffer
VCTCXO
Package
Type
SOT343
BFG425W
Wideband
transistor
SiGe:C
transistor
SiGe:C MMIC
SOT343F
BFU725F/N1
SOT891
BGU7003
Frequency
Package
Varicap
diode^
SOT882T
Type
BB202LX
BB178LX
BB179LX
BB181LX
BB182LX
BB184LX
BB187LX
Frequency
Wideband
transistor
Wideband
transistor
Package
Type
SOT323
BFR93AW
SOT363A
BFM520
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = also in SOD523
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
28
NXP Semiconductors RF Manual 14th edition
Features
`` Low-noise, high-gain microwave MMIC
`` Maximum stable gain = 19 dB at 1.575 GHz
`` 110-GHz fT-Silicon Germanium technology
`` Optimized performance at low (5-mA) supply current
`` Extemely thin, leadless 6-pin SOT891 package
`` Integrated biasing and shutdown for easy integration
1.5.2 A 2.4 & 5 GHz front-end for WLAN (802.11n Dual Concurrent)
Application diagram
low pass
filter
PActrl
Tx
antenna
SPDT
switch
medium
power
amplifier
APPLICATION
CHIP SET
Rx
bandpass
filter
LNA
SPDT
bra502
Recommended products
Function
Medium
power
amplifier
Function
LNA
Product
MMIC
Package
Medium power
amplifier
Product
RF Transistor
SiGe:C
transistor
MMIC
SiGe:C MMIC
SOT89
SOT908
Type
BGA7024
BGA7027
BGA7124
BGA7127
Package
Type
SOT343F
BFU725F/N1
SOT891
BGU7003
Product highlight:
medium power amplifier BGA7127 MMIC
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 28 dBm
output power at 1 dB gain compression and a superior performance
for various narrowband-tuned application circuits for frequencies up
to 2700 MHz.
Features
`` 400 MHz to 2700 MHz frequency operating range
`` 13 dB small signal gain at 2 GHz
`` 28 dBm output power at 1 dB gain compression
`` Integrated active biasing
`` 3.3 V / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 μA shutdown mode
NXP Semiconductors RF Manual 14th edition
29
1.5.3 2-way radio / family radio system
Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
VCO
filter
PA
driver
LOW
FREQUENCY
CHIP SET
VCO
bra850
Recommended products
Function
Product
SPDT Switch
RF diode
Bandswitch
diode
PIN diode
Function
Product
RF bipolar
transistor
LNA
MMIC
Function
Product
RF bipolar
transistor
Driver
MMIC
Wideband
transistor
Package
SOD523
SOD323
various
various
Type
BA277
BA591
BAP51^
BAP1321^
Function
Package
SOT23
SOT323
SOT323
Type
PBR951
PRF957
PRF947
Function
SiGe:C
SOT343F
transistor
SOT343R
Low noise
wideband ampl. SOT343R
Package
Wideband
SOT323
transistor
SOT23
Amplifier
SOT363
Gen. purpose SOT363
wideband ampl. SOT363
BGA2001
BGA2003
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Product highlight:
PRF957 silicon NPN UHF wideband transistor
Silicon NPN UHF wideband transistor in a surface mount 3-pin
SOT323 package is primarily intended for wideband applications
in the RF front end. The transistor is widely built as LNA, power
amplifier, driver and buffer in the UHF band application.
NXP Semiconductors RF Manual 14th edition
Buffer
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Wideband
transistor
BFU725F/N1
^ = also available in ultra small leadless package SOD882T
30
Mixer
Product
Function
Power
amplifier
Function
VCO
Features
Product
MMIC
Product
Varicap
diodes
Gen. purpose
wideband
ampl.
VCO varicap
diodes
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
SOT89
Package
SOD523
SOD323
Type
BB198
BB156
`` Small 3-pin plastic surface mounted package
`` Low noise (1.3 dB at 1 GHz) and high power gain (15 dB at 1 GHz)
`` Gold metallization ensures excellent reliability
1.5.4 DECT front-end
DECT in-house base station
Application diagram
Application diagram
antenna
LNA
antenna
LNA
filter
mixer
filter
buffer
switch
filter
SPDT
switch
CHIPSET
PA
VCO
filter
PA
driver
CHIPSET
VCO
bra911
Recommended products
Function
RF Switch
Recommended products
Product
RF diode
bra910
PIN Diode
Package
various
various
various
various
various
various
Type
BAP51^
BAP55^
BAP142^
BAP63^
BAP64^
BAP1321^
^ = also available in ultra small leadless package SOD882T.
Function
Product
RF diode
RF Switch
Function
Mixer
PIN Diode
Product
RF bipolar
transistor
MMIC
Wideband
transistor
SiGe:C
transistor
Linear mixer
Package
various
various
various
various
various
various
Type
BAP51^
BAP55^
BAP142^
BAP63^
BAP64^
BAP1321^
Package
SOT343
SOT343
SOT343
Type
BFG410W
BFG425W
BFG480W
SOT343F
BFU725F/N1#
SOT363
BGA2022
# = also for 5.8 GHz
Product highlight:
BAP64xx PIN diode for RF switch
Operating up to 3 GHz with high-voltage handling capabilities,
NXP’s PIN diodes are ideal for a wide range of wireless
communication application. Together with outstanding RF
performance, this component simplify design-in because of its
extremely low forward resistance, diode capacitance and series
inductance.
Features
`` Operate up to 3 GHz
`` High isolation, low distortion, low insertion loss
`` Low forward resistance (Rd) and diode capacitance (Cd)
`` Ultra-small package options
Significant board space saving by supplying a range of high
compact package options – including SOD523, SOD323 and
leadless SOD882T.
NXP Semiconductors RF Manual 14th edition
31
1.6 Automotive & Industrial
Note: looking for GPS? See chapter 1.5.1 Handset.
1.6.1 Active antenna
Application diagram
antenna
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
CHIPSET
brb215
Recommended products
Function
1st stage
LNA
Product
Function
Product
2nd stage
LNA
Function
3 rd stage
LNA
MMIC
MMIC
Product
RF transistor
MMIC
Low noise wideband
amplifier
General purpose
wideband amplifier
SiGe:C transistor
SiGe:C MMIC
Package
SOT343R
SOT343R
Type
BGA2001
BGA2003
Package
SOT363
SOT363
SOT363
SOT363
Type
BGM1013
BGM1011
BGA2715
BGA2748
Package
SOT343F
SOT891
Type
BFU725F/N1
BGU7003
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
32
NXP Semiconductors RF Manual 14th edition
Features
`` Low-noise, high-gain microwave MMIC
`` Maximum stable gain = 19 dB at 1.575 GHz
`` 110-GHz fT-Silicon Germanium technology
`` Optimized performance at low (5-mA) supply current
`` Extemely thin, leadless 6-pin SOT891 package
`` Integrated biasing and shutdown for easy integration
1.6.2 Remote keyless entry, RF generic front-end with dedicated antenna for
reception and transmission
Application diagram
antenna
filter
receiver
LNA
filter
mixer
LOW
FREQUENCY
CHIP SET
buffer
VCO
antenna
filter
transmitter
PA
driver
VCO
LOW
FREQUENCY
CHIP SET
bra851
Recommended products
Function
Product
RF bipolar
transistor
LNA
MMIC
Wideband
transistor
Low noise
SOT343R
wideband ampl.
SiGe:C MMIC
Function
Product
RF bipolar
transistor
Driver
MMIC
Function
VCO
SOT891
Package
Wideband
SOT323
transistor
SOT23
Amplifier
SOT363
Gen. purpose SOT363
wideband ampl. SOT363
Product
Varicap
diodes
Package
SOT23
SOT323
SOT323
VCO varicap
diodes
Package
SOD323
SOD323
SOD523
SOD323
Type
PBR951
PRF957
PRF947
BGA2001
BGA2002^
BGA2003
BGU7003
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Type
BB148
BB149A
BB198
BB156
Function
Mixer
Function
Buffer
Function
Power
amplifier
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Product
RF bipolar
transistor
MMIC
Wideband
transistor
Wideband
transistor
Amplifier
Gen. purpose
wideband
ampl.
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
SOT323
SOT23
SOT363
SOT363
SOT363
SOT908
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
BGA7124
^ = automotive qualified
Product highlight:
NXP varicap diodes for VCO
Varicap diodes are principally used as voltage varicap capacitors with
their diode function a secondary option. These devices are ideal for
voltage controlled oscillators (VCO) in ISM band applications.
Features
`` E xcellent linearity
`` E xcellent matching
`` Very low series resistance
`` High capacitance ratio
NXP Semiconductors RF Manual 14th edition
33
1.6.3 Tire pressure monitoring system
Application diagram
antenna
filter
PA
driver
VCO
SENSOR
brb216
Recommended products
Function
Product
RF bipolar
transistor
PA
Function
Product
RF bipolar
transistor
Driver
MMIC
Function
VCO
Wideband
transistor
Wideband
transistor
Amplifier
Gen. pupose
wideband ampl.
Product
Varicap diodes VCO varicap diodes
Package
SOT23
SOT323
SOT23
SOT323
SOT323
Type
BFR92A
BFR92AW
BFR94A^
BFR93AW
BFR94AW^
Package
SOT323
SOT23
SOT363
SOT363
SOT363
Type
PRF957
PBR951
BGA2031/1
BGA2771
BGA2776
Package
SOD523
SOD323
Type
BB198
BB156
^ = automotive qualified
Product highlight:
BFR94AW silicon NPN transistor
It is designed for use in RF amplifiers, mixers and oscillators
with signal frequencies up to 1 GHz. This silicon NPN transistor
encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW
uses the same crystal as the SOT23 version, BFR92A.
34
NXP Semiconductors RF Manual 14th edition
Features
`` High power gain
`` Gold metallization ensures excellent reliability
`` SOT323 (S-mini) package
`` AUTOMOTIVE QUALIFIED
1.6.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
FM input
filter
& AGC
1st
mixer
IF
bandpass
filter
2nd
mixer
variable
BW filter
IF limiter
FM deamplifier modulator
f
AGC &
hum filter
oscillator
V
FM MPX
oscillator
AM LNA
DET
RF input
filter
1st
mixer
IF
bandpass
filter
2nd
mixer
IF
bandpass
filter
AM audio
IF
AM deamplifier modulator
bra501
Recommended products
Function
AM LNA
Product
RF transistor
Function
Product
FM input
filter & AGC
RF diode
JFET
Varicap
diode
PIN diode
Package
SOT23
Type
BF862
Package
SOT23
SOT23
SOD523
SOD323
Type
BB201^
BB207
BAP70-02
BAP70-03
Function
AGC &
hum filter
Product
Function
Product
Oscillator
RF diode
RF diode
Package
Type
PIN diode
SOT363
BAP70AM
Varicap
diode
Package
SOD323
SOD523
Type
BB156
BB208-02
^ = OIRT
Note 1:
All these recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684
6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;
DDICE:TEA6721HL. All these recommended discrete products are
applicable excluding AM LNA in: DICE2:TEF6730HWCE.
Product highlight:
BF862 Junction Field Effect Transistor
Our Tuning component portfolio contains excellent products for car
radio reception applications, playing a vital role for in-vehicle media
platforms. The NXP devices for this application ensure excellent
reception quality and ease of design in. Performance is demonstrated
in reference designs.
Note 2:
Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM
oscillator.
Features
`` High transition frequency and optimized input capacitance for
excellent sensitivity
`` High transfer admittance resulting in high gain
`` Encapsulated in the versatile and easy to use SOT23 package
High performance Junction Fet BF862, specially designed for car
radio AM amplifiers.
NXP Semiconductors RF Manual 14th edition
35
1.6.5 E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
filter
VCO
MPA
driver
E-METERING
CHIP SET
VCO
bra850
Recommended products
Function
Product
SPDT Switch
Package
SOD523
SOD323
various
various
Type
BA277
BA591
BAP51^
BAP1321^
Function
Product
RF transistor SiGe:C transistor
Low noise
wideband ampl.
MMIC
SiGe:C MMIC
Package
SOT343F
SOT343R
SOT343R
SOT891
Type
BFU725F /N1
BGA2001
BGA2003
BGU7003
Function
Product
RF bipolar
transistor
Package
Type
Function
SOT343
BFG425W
SOT363
SOT363
SOT363
BGA2031/1
BGA2771
BGA2776
RF diode
Bandswitch
diode
PIN diode
Function
LNA
Function
Driver
MMIC
Wideband
transistor
Amplifier
Gen. purpose
wideband ampl.
Mixer
Buffer
Medium power
amplifier
Product
RF bipolar
transistor
Wideband
transistor
MMIC
Linear mixer
Product
RF bipolar
transistor
Wideband
transistor
Product
RF bipolar
transistor
Wideband
transistor
MMIC
^ = also available in ultra small leadless package SOD882T.
Function
VCO
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and a superior performance
for various narrowband-tuned application circuits for frequencies up
to 2700 MHz.
36
NXP Semiconductors RF Manual 14th edition
Features
Product
Varicap
diodes
Gen. purpose
wideband
ampl.
VCO varicap
diodes
Package
SOT343
SOT343
SOT343
SOT363
Type
BFG410W
BFG425W
BFG480W
BGA2022
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Package
Type
SOT343
BFG21W
SOT908
SOT908
BGA6289
BGA6489
BGA6589
BGA7124
BGA7127
Package
SOD523
SOD323
Type
BB198
BB156
SOT89
`` 400 MHz to 2700 MHz frequency operating range
`` 16 dB small signal gain at 2 GHz
`` 27 dBm output power at 1 dB gain compression
`` Integrated active biasing
`` 3.3 V / 5 V single supply operation
`` Simple quiescent current adjustment
`` 1 μA shutdown mode
1.6.6 RF Plasma Lighting
Application diagram
RF (plasma) bulb
oscillator
MPA
HPA
CONTROLLER
brb436
Recommended products
Function
Type
driver
final
final
BLF571
BLF573S
BLF574
final
BLF578
final
BLF645
final
final
BLF 278
BLF 177
Function
frange
(MHz)
PL
W
Gp
dB
Mode of operation
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
0 - 1300
108 - 225
28 - 108
20
300
400
1200
1000
100
100
250
150
27.5
27.2
26.5
24
24
18
17
16
19
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; PULSED RF
1-TONE; CW
2-TONE
CW
class AB
class B
Product
Package
MMIC
MPA (medium
power
amplifier)
MMIC
SiGe:C MMIC
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Product highlight:
NXP's 50 V high voltage LDMOS process enables highest power
at unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
Features
`` Highest power device
`` Unprecedented ruggedness
`` Low-thermal resistance design for very reliable operation
`` Very consistent device performance
`` Broadband device for flexible use
NXP Semiconductors RF Manual 14th edition
37
1.6.7 Medical Imaging
Application diagram
Magnet
X GRADIENT
AMPLIFIER
Gradient coils
RF coils
Y GRADIENT
AMPLIFIER
WAVEFORM
GENERATOR
Z GRADIENT
AMPLIFIER
RF amplifier
RF
ELECTRONICS
ADC
COMPUTER
IMAGE
DISPLAY
brb434
Recommended products
Function
Type
driver
driver
driver
final
final
final
final
BLF871(S)
BLF881
BLF571
BLF573S
BLF574
BLF578
BLF645
frange
(MHz)
PL
W
Gp
dB
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
100
120
20
300
400
1200
100
21
21
27.5
27.2
26.5
24
18
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
38
NXP Semiconductors RF Manual 14th edition
Features
`` Best broadband efficiency
`` Highest power (density) devices
`` Unrivalled ruggedness
`` Very consistent device performance
1.6.8 RF Microwave furnace application
Application diagram
antenna
oscillator
MPA
HPA
isolator
CONTROLLER
brb418
Recommended products
Function
Driver
Final
Final
Function
Type
BLF6G24-12
BLF6G24-180PN
BLF7G24L (S)-250P
frange
MHz
2000 - 2200
2000 - 2200
2500 - 2700
Product
Package
MMIC
MPA (medium
power
amplifier)
MMIC
SiGe:C MMIC
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
PL(AV)
W
40
50
20
nD
%
27.5
27.5
25
GP
dB
17
17.5
16.5
Availability
Q3 2010
Q3 2010
Q3 2010
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Product highlight:
NXP’s 6th and 7th generation LDMOS technology together with
advanced package concepts enable best in class performing power
amplifiers. The unsurpassed ruggedness and low thermal resistance
in connection with the high intrinsic efficiency make these transistors
ideally suited for the furnace application.
Features
`` Excellent ruggedness
`` Very consistent device performance
`` Low thermal resistance design for unrivalled reliability
`` Very easy to design with
NXP Semiconductors RF Manual 14th edition
39
2. Technologies & focus products
2.1
Get the fastest TTFF^ with GPS LNAs that use proven QUBiC4X SiGe:C
^ TTFF = Time-To-First-Fix
NXP GPS LNAs BGU7003, BGU7005, BGU7006 and BGU7007
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology and available in
the industry’s smallest package, this highly integrated GPS LNAs reduce cost while delivering
better sensitivity, greater immunity against jamming signals, and higher linearity.
These LNAs designed for GPS receiver applications, are
produced in NXP’s industry-leading QUBiC4X process, a
0.25-µm SiGe:C technology. They have very low noise figures
and superior linearity performance, so they help to improve
overall sensitivity, which in turn leads to faster
Time-To-First-Fix (TTFF) and better tracking.
Features
`` Requires only 4 external components (including decoupling)
to build complete GPS front-end.
`` Requires only one external matching component
`` Low current consumption (5 mA)
`` Low noise figure (NF): 0.8 - 0.9 dB at 1.575 GHz
`` Low current consumption in power-down mode (<1 μA)
`` ESD protection on all pins
`` Supply voltage: max 2.85 V, optimized for 1.8 V
`` Proven, robust QUBiC4X SiGe:C process technology
(fT = 110 GHz)
Type
SOT891
SOT886
WLCSP***
SOT886
They restore sensitivity, provide greater immunity against
out-of-band cellular signals, reduce filtering requirements,
and lower overall cost. They can be placed close to the GPS
antenna, minimizing the noise figure. Additional gain amplifies
the GPS signal and raises the on-board signal-to-jammer ratio.
The GPS receiver can be put close to the primary phone
antenna, for the best GSM/UMTS performance, while the GPS
antenna can be placed far away. This improves antenna-toantenna isolation and results in higher performance.
@ 1.575 GHz
insertion power noise
input power at 1 dB gain compression
gain
figure
supply
voltage
supply current
Vcc
Icc
|s21|
NF
PI(1dB)
IP3i
V
mA
dB
dB
dBm
dBm
Typ
Max Typ
Package
BGU7003
BGU7005
BGU7006*
BGU7007*
The proven QUBiC4X process improves overall RF performance
and means the LNAs are less expensive and offer higher, more
flexible performance than their GaAs counterparts.
Min
Max
Min
Typ
2.2
1.5
1.5
1.5
2.85
2.85
2.85
2.85
3
-
4.5
3.8
4.8
Max Min
15
-
16
-
2
18.3
16.5**
16.5**
18****
20
-
0.8
0.9
0.9
0.9
Vcc = Vcc =
Vcc = Vcc = Vcc =
Vcc =
Vcc =
Vcc =
V = 2.5 V,
V = 2.5 V,
1.8 V, 1.8 V, cc
2.85 V, 2.85 V, 1.8 V, 1.8 V, cc
2.85 V, 2.85 V,
Icc = 5 mA
Icc = 5 mA
Min
Typ
Min
Typ
Min
Typ
Min
Typ
-20
0
-14
-11
-11
-8
5
9
5
12
-14
-11
-12
-9
1
4
5
9
-14
-11
-11
-8
5
9
5
12
* = check status at 3.1 new products, as this type has not been released yet for mass production.
** = 16.5 dB without jammer / 17.5 dB with jammer
*** = 5 solder bumps, pitch 220 µm
**** = 18 dB without jammer / 19 dB with jammer
40
NXP Semiconductors RF Manual 14th edition
input third-order intercept point
2.2
Always the right match with our latest 6th and 7th generation SiGe:C
wideband transistors
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGe:C microwave
NPN transistors, you get high switching frequencies plus extremely high gain and low noise. All this
in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 30 GHz.
Benefits
`` Plastic surface-mount SOT343F package
`` SiGe:C process delivers high switching frequency from
a silicon-based device
`` Cost-effective alternative to GaAs devices
`` RoHS compliant
Applications
`` Low noise amplifier (LNA) for microwave communications
systems
`` 2 stage LNA and mixer in direct broadcast satellite (DBS)
low-noise blocks (LNBs)
`` GPS systems
`` Satellite radio
`` WLAN/WiMAX and CDMA applications, LTE
`` DVB, CMMB
nd
The NPN microwave transistors deliver an unbeatable blend of
high switching frequency, high gain and very low noise. Thanks
to the ultra-low noise figures, they are perfect for your sensitive
RF receivers particularly those for high-performance cell
phones. Alternatively, with the high cut-off frequencies, they
are your ideal solution for microwave applications in the 10 GHz
to 30 GHz range, such as satellite TV receivers and automotive
collision avoidance radar.
These new 6th and 7th generation SiGe:C wideband transistors
get their outstanding performance from our innovative silicongermanium-carbon (SiGe:C) BiCMOS process. QUBiC4X was
designed specifically to meet the needs of real-life, highfrequency applications and delivers an unrivalled fusion of
high power gain and excellent dynamic range. It combines the
performance of gallium-arsenide (GaAs) technologies with the
reliability of a silicon-based process. In addition, with these
transistors, you don’t need a biasing IC or negative biasing
voltage. So it’s a much more cost-effective solution than GaAs
pHEMT devices.
Full portfolio overview of 6th and 7th generation RF
wideband transistors at chapter 3.3.1
NXP Semiconductors RF Manual 14th edition
41
2.3 NXP Medium-Power MMICs BGA7xxx for broadband applications
Broadband QUBiC4 MMICs for all 400-2700 MHz applications
Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal
performance and added-value features to all 400-2700 MHz applications − at a lower cost than
GaAs versions.
Features
`` ESD protection at all pins
`` Single-supply operation (3.3 or 5 V)
`` Integrated active biasing
`` Fast shutdown
`` Quiescent current adjustment
`` Two package options, smallest leadless package (3 x 3 mm)
and leaded SOT-89
tailor gain or P1dB for specific platform requirements. Between
475-625 MHz and 1.15-1.5 GHz gain flatness is unrivalled. NXP
Medium Power MMICs operate at low current consumption
and offer a fast shut-down function to save as much power
as possible. With ESD protection, active biasing and SOT89
package availability, design-in is simplified and requires a
minimum of external components.
Base station
The high power level of these MMICs makes them an excellent
choice for mobile-infrastructure applications. They offer the
highest gain overall all base stations frequencies. The quiescentcurrent feature allows for high efficiency and linearity in Class-AB
operation. The bias circuitry delivers a stable performance over
temperature and supply variations. The integrated shutdown
function is a power-saving feature and can be used for fast
shutdown. The MMICs can be tuned for any band between
VHF and 2.7 GHz.Unbeatable thermal performance (30 °C/W)
improves overall quality and reliability.
Applications
`` Wireless infrastructure (base station, repeater)
`` eMetering
`` Broadband CPE (MoCA)
`` Satellite Master Antenna TV (SMATV)
`` Industrial applications
`` W-LAN / ISM / RFID
Manufactured in NXP’s breakthough QUBiC4 process, these
MMICs deliver a comparable level of RF performance as their
GaAs equivalents, but at a lower cost and with additional
features, like thermal performance and ESD robustness. The
QUBiC4 process makes it possible to support even more
features, including active biasing, quiescent adjustment, VGA
interfaces, and a power-saving shutdown mode. To increase
design flexibility, all the MMICs support single-supply (3.3/5 V)
operation. And, to save space, they are available in the smallest
package size (3 x 3 mm) and with leadless options.
eMetering
These MMICs are also very well suited to eMetering applications
in the 900-2400 MHz ISM band. High integration and singlesupply operation mean that the MMICs can be combined with
just a few other components to create a full-featured solution.
The MMICs can be operated on battery power (with an energysaving shutdown mode) and are tunable between Class A and
AB. They can also work on a power-line network, so they support
gas metering with or without a power connection. The builtin reliability and quality of a silicon-based process provides
longevity, as does the improved ESD performance.
MoCA
These MMICs are exceptionally well-suited for use a MoCA
(Multimedia over Cable Alliance) PA in both the STB and in PC
dongles. The MMICs offer the system designer the ability to
Supply
Type
Package
f
Vcc
Typ
Shutdown control
Icc
Typ
VI(D)L(SHDN)
Max
Min
Max
VI(D)H(SHDN)
Min
Max
II(D)L(SHDN)
Typ
(MHz)
(V)
(mA) (mA)
(V)
(V)
(V)
(V)
(µA)
BGA7124 SOT908
leadless
400 - 2700
5
130
200
0
0.7
2.5 Vbias
4
BGA7024
SOT89
leaded
400 - 2700
5
110
BGA7127* SOT908
leadless
400 - 2700
5
180
325
0
0.7
2.5 Vbias
4
BGA7027* SOT89
leaded
400 - 2700
5
170
BGA7130* SOT908
leadless
400 - 2700
5
0
0.7
2.5 Vbias
4
BGA7133* SOT908
leadless
400 - 2700
5
0
0.7
2.5 Vbias
4
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.
* = check status at 3.1 new products, as this type has not been released yet for mass production.
42
NXP Semiconductors RF Manual 14th edition
RF performance
RF performance
Typ @ f = 940 MHz
Typ @ f = 1960 MHz
Gp
PL(1dB)
OIP3
NF
Gp
PL(1dB)
OIP3
NF
dB
22
22
20
19
18
18
dBm
25
24
28
28
30
33
dBm
38
38
44
41
45
46
dB
5
3
3
3
4
4
dB
16
16
13
12
12
12
dBm
24
25
28
28
30
33
dBm
38
38
43
43
45
47
dB
5
4
5
4
4
4
2.4 Low-noise LO generators for microwave & mmWave radios
NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low power consumption and low-spurious solutions that simplify
design-in and lower the total cost of ownership.
These low-noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier,
for lower overall cost and faster development, enabling quick
time-to-market.
Features
`` TFF11xxxHN family: Lowest noise LO generators for
a full family in range 7 to 15 GHz
`` Maximum power consumption for all types, typical 330 mW
`` Phase-noise compliant with IESS-308 (Intelsat)
`` Proven QUBiC4X SiGe:C technology (120-GHz fT process)
`` External loop filter
`` Differential input and output
`` Lock-detect output
`` Internally stabilized voltage reference for loop filter
`` 24-pin HVQFN (SOT616-1) package
Applications : TFF11xxxHN family
`` Industrial/Medical Test and Measurement Equipment
`` Electronic Warfare (EW)
`` Electronic Countermeasures (ECM)
`` Point to Point
`` Point to Multi-Point
`` Satellite Communication
Since these ICs are manufactured in NXP’s industry-leading
QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
and consume much less power. The process technology also
enables higher integration, for added features. NXP owns the
industrial base for production (wafer fab, test, assembly),
so volume supplies can be assured.
The TFF1003HN is the basis for the entire family of LO
generators. It has VCO coverage of 12.8 to 13.05 GHz and
accepts input signals from 50 to 816 MHz. The divider can be set
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
stability of ±2 dB. The family of LO generators is completed by
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
devices is consistent with the TFF1003HN.
All the LO generators have very low power dissipation typical
330 mW, and all are available in a space-saving 24-pin HVQFN
package.
Full portfolio overview of low noise LO generators for
general microwave applications at chapter 3.4.2
NXP Semiconductors RF Manual 14th edition
43
2.5
Complete satellite portfolio for all LNB architectures
NXP satellite LNB devices BFU725F/N1 and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are
manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and are
the latest additions to NXP’s leading portfolio for satellite LNB.
BFU725F/N1 RF transistor
The BFU725F/N1 is a RF transistor that can be used in the
LNA part and as a mixer for a DBS LNB. In either application,
it delivers low power consumption, good noise and linearity,
and the lowest cost compared to GaAs pHEMT solution.
BFU725F/N1 as mixer in Ku-band LNB
`` Power consumption: 2 mA at 5 V
`` Single supply: 3, 5, or 6 V
`` Noise, Single Side Band: 7 dB (including BPF)
`` Linearity: better than 0 dBm OIP3
`` Gain, SSB: 2 dB (including BPF)
`` RF/LO/IF Match: better than 12/15/18 dB
`` Broadband unconditionally stable
`` LO-RF isolation better than 18 dB
BFU725F/N1 as 2nd or 3rd stage LNA in Ku-band LNB
`` Power consumption: 11 mA at 5 V
`` Single supply: 3, 5, or 6 V
`` Noise, SSB: typically 1.3 dB
`` Linearity: better than 10 dBm OIP3
`` Gain, SSB: typically 10.5 dB
`` In/Out match: better than 7/12 dB
`` Broadband unconditionally stable
44
NXP Semiconductors RF Manual 14th edition
BFU725F/N1 as LNA for C-band LNB
`` Power consumption: 7 mA at 5 V
`` Single supply: 5 or 6 V
`` Noise: 0.65 dB
`` Linearity: better than 10 dBm OIP3
`` Gain: 15 dB
`` In/Out Match: better than 10 dB
`` Broadband unconditionally stable
BGA28xx MMICs as IF amplifiers (1st stage & output stage)
For compatibility with existing designs, the series uses a
market standard package, the SOT363 and the pin-compliant
SOT363F package. The pinning is identical to NXP’s current
gain block family, and the blocks deliver similar noise figures.
New features include flatter gain, a gain slope of 0.5 dB,
improved P1dB vs. Icc, and no necessity of an output inductor
(also not at high P1dB models).
`` Internally matched at 50 Ω
`` Gain slope 0.5 dB
`` Single supply current
- At 3.3 V or 5 V
`` Reverse isolation: >30 dB up to 2 GHz
`` Best-in-class linearity vs current consumption
`` Noise figure: 4 to 6 dB at 1 GHz
`` Unconditionally stable (K > 1)
`` High compression point models work without output inductor
`` 6-pin SOT363 plastic SMD package
These products – the BFU725F/N1 transistor for LNA and
mixer applications, and the BGA28xx series of MMICs
for IF amplifiers – are the most recent additions to NXP’s
leading portfolio for satellite LNB. They join the other
discrete products, including oscillators, amplifiers, switches,
and biasing, to provide complete coverage for all LNB
architectures.
they offer better overall RF performance and are more robust
than their GaAs equivalents for the lowest cost. The process
technology also enables higher integration, for added features.
NXP owns the industrial base for production (wafer fab, test,
assembly), so volume supplies can be assured.
Since the transistor and the MMICs are manufactured in NXP’s
industry-leading QUBiC4X SiGe:C and QuBiC4+ process,
Satellite outdoor unit, LNB for multiple users
horizontal
1st
antenna stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
H low
IF amplifier
oscillator
low
mixer
BIAS IC
V low
mixer
IF amplifier
H high
(4 x 2)
IF
SWITCH
IF
amplifier
IF out 1
IF amplifier
vertical
antenna
high
oscillator
IF
amplifier
V high
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
mixer
IF amplifier
IF out 2
brb022
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
Quick reference satellite IF gain MMICs
@
Type
Package
BGA2800
SOT363
Fu
@ 1 GHz
Gain (dB) @
Vs
Is
@-3dB
NF
Gain
OIP3
250
950
1550
2150
(V)
(mA)
(GHz)
(dB)
(dB)
(dBm)
(MHz)
(MHz)
(MHz)
(MHz)
3.3
9.7
>3
3.4
20.2
11.5
20.0
20.2
20.6
20.6
BGA2801
SOT363
3.3
12.4
3.0
3.6
22.1
13.6
22.3
22.1
23.0
23.8
BGA2815
SOT363
3.3
16.4
>3
3.4
25.4
18.2
26.2
25.4
25.5
25.8
BGA2816
SOT363
3.3
19.6
2.3
2.8
31.2
16.1
32.0
31.2
30.6
28.7
BGA2850
SOT363
5.0
7.7
>3
3.9
23.3
8.7
22.9
23.2
23.9
24.0
BGA2865
SOT363
5.0
22.7
2.6
3.7
31.9
20.9
31.2
31.8
32.6
31.4
BGA2866
SOT363
5.0
15.4
>3
3.6
23.4
17.7
23.0
23.3
24.0
24.3
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
NXP Semiconductors RF Manual 14th edition
45
2.6
VSAT, 2-way communication via satellite
Design a Ku-band VSAT transmitter or transceiver that meets IESS-308
NXP Ku-band RF LO Generator IC’s for VSAT
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise
Local Oscillator (LO) circuits in Ku-band VSAT transmitters and transceivers. Manufactured in a highperformance SiGe:C process, it delivers extremely low phase noise and complies with the IESS-308
from Intelsat.
VSAT networks are commonly used to transmit narrowband
data, such as point-of-sale transactions for credit cards, or to
transmit broadband data that supports satellite Internet access
to a remote location, VoIP, or video.
The network typically consists of a dish antenna, an outdoor
unit, and an indoor unit. The outdoor unit is used for
frequency translation between RF and IF, and usually includes
a microwave-based uplink/downlink separator, a Low Noise
Block (LNB) for receiving the downlink signals, and a Block Up
Converter (BUC).
The VSAT IC’s can be used to create the LO generator for a
linear BUC (meaning the IF or RF conversion is done by mixing
with an LO).
Features
`` Phase noise compliant with IESS-308 (Intelsat)
`` Differential input and output
`` Divider settings at 16, 32, 64, 128 or 256
`` Lock-detect output
`` SiGe:C technology (120-GHz fT process)
`` HVQFN24 (SOT616-1) package
Applications
`` VSAT block-up-converters
`` VSAT down conversion
`` Local oscillator signal generation
46
NXP Semiconductors RF Manual 14th edition
To enable precise frequency and time multiplexing, the
downlink signal provides an accurate frequency reference of 10
MHz. The indoor unit frequency multiplexes this with the uplink
IF signal, and the LO signal in the BUC needs to be frequency
locked to the reference.
The TFF100xHN IC’s are housed in a 24-pin HVQFN (SOT616-1)
package. The pins have been assigned for optimal performance.
Three voltage domains are used to separate the block on the
IC, and two pins for each output (OUT-P) and OUT-N) have been
reserved to match a typical layout using a linewidth of Z = 50 Ω
microstrip on a 20-mil RO4003 board (1.1 mm).
The ground pins have been placed next to the reference input
and the output, and, to minimize crossings in the application,
all the supply pins are on the same side of the IC.
Satellite
VSATs
HUB
Typical VSAT network
mixer
synchronized QPSK data on L band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz)
from
indoor
unit
13.05 GHz settings
(12.8 GHz settings)
10 MHz
/64
(/48)
PFD
LF
PFD
solid
state
power
amp
amp
12.8~13.05
on-chip VCO
203.90625 (200) MHz
band
pass
filter
LF
band
pass
filter
156.25 kHz
(208.83 kHz)
/1305
(/960)
/64
TFF1003HN
203.90625 (200) MHz > 13.05 (12.8) GHz
TFF1003 @ DIV = 64 PLL with on-chip VCO
clean up PLL build around VCXO
narrow bandwidth
brb200
Complete LO generator for linear BUC with TFF1003HN
Type
Package
fIN(REF)
VCC
ICC
Typ
MHz
V
PLL phase noise
@ N=64 @ 100 kHz
Max
mA
PLL
fo(RF)
Output buffer
Po
RLout(RF)
Input
Si
Typ
Max
Min
dBc/Hz
(GHz)
dBm
dB
dBm
TFF1003HN
SOT616
50~815
3.3
100
-92
12.8~13.05
-5
-10
-10
TFF1007HN
SOT616
230.46~234.38
3.3
100
-104
14.75~15
-3
-10
-10
NXP Semiconductors RF Manual 14th edition
47
2.7
NXP CATV C-family for the Chinese SARFT standard
Connecting people, protecting your network
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP CATV C-family
offers you a total solution for cable TV networks. It is both flexible enough for connecting rural
communities as part of China’s ‘Connecting every village’ program and powerful enough for
upgrading major cities from analog to high-end digital services. All C-type devices are compliant
with the Chinese State Administration for Radio, Film and Television (SARFT) standard, and cover
most HFC applications in the 550 - 870 MHz range.
Further extending our high quality CATV portfolio, this
new family lets you address an even wider range of HFC
applications. Dedicated solutions for the implementation
of CATV systems in China, our C-type devices deliver the
performance you need for modern TV infrastructures.
Products
`` BGY588C, BGE788C, CGY888C and BGY835C push-pull
amplifiers
`` BGD712C, CGD944C and CGD942C power doublers
`` BGO807C and BGO807CE optical receiver
Features
`` Excellent linearity, stability and reliability
`` High power gain
`` Extremely low noise
`` Silicon Nitride passivity
`` GaAs HFET dies for high end devices
Benefits
`` Compliant with Chinese SARFT HFC networks standard
`` Transparent cap allows confirmation of product authenticity
`` Rugged construction
48
NXP Semiconductors RF Manual 14th edition
The BGY588C, BGE788C and BGD712C devices cover the
frequency range from 550 MHz to 750 MHz. Extending the
C-family portfolio into the high-end segment, the CGD944C,
CGD942C, CGY888C and BGO807C operate between 40 MHz
and 870 MHz and have been specifically tested under Chinese
raster conditions. Manufactured using our GaAs HFET die
process, the CGD942C, and CGD944C are high-gain, highperformance 870 MHz power doublers. They are capable of
satisfying the demanding requirements of top-end applications
including high-power optical nodes.
Our GaAs HFET MMIC dies are providing ‘by design’ the
best ESD protection levels with no needs for external TVS
components normally used with GaAs pHEMT devices.
All CATV C-type devices feature a see-through cap that makes
it easy to distinguish them from counterfeit products.
BGY588C, BGE788C, CGY888C and BGY835C
The last stage of an HFC network structure is called a
terminating amplifier or ‘user amplifier’ as it is close to the
subscribers. Each terminating amplifier requires a single
module such as BGY588C for 550 MHz, BGE788C for 750 MHz
and CGY888C for 860 MHz systems. These modules are fitting
perfectly in the Chinese ‘Connecting to Every Village’ projects.
IN
port
PAD
EQ
BGY588C
BGE788C
BGY835C
CGY888C
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
ordinary or optical receivers and distribution amplifiers. It can
also be used in line extender amplifiers together with a 750 MHz
push-pull module, such as BGY785A or BGY787. As such it can be
used widely in Chinese ‘Connecting to Every Village’ projects.
IN
port
OUT
port
bra820
CGD944C and CGD942C
Our full GaAs power doublers modules, CGD942C and
CGD944C offer high output power and better CTB and
CSO than other modules. Designed for high-end HFC
networks containing optical nodes with multiple out-ports,
these modules enable each port to directly cover at least
125 subscribers. These two devices are ideal when used in
upgrading HFC networks to 860 MHz.
PAD
OUT
port
EQ
BGY785A
BGY787
BGD712C
bra821
BGO807CE
BGO807CE is an integrated optical receiver module that
provides high output levels and includes an integrated
temperature compensated circuitry. In your optical node
design, BGO807CE enables a high performance/ price ratio
and ruggedness. When upgrading an HFC network from
analog to digital our BGO807CE is the perfect fit.
CGD942C/CGD944C
PAD
H
L
OUT
port 1
BGD812
CGD942C/CGD944C
PAD
EQ
PAD
BGO807CE
(N + 1)
RF switch
BGY885A
BGD812
BGY887
H
L
OUT
port 2
PAD
CGD942C/CGD944C
PAD
H
L
PAD
BGO807CE
OUT
port 3
EQ
BGY885A
H
L
BGD812
PAD
H
L
CGD942C/CGD944C
BGO807CE
PAD
H
L
OUT
port 1
OUT
port 2
bra823
OUT
port 4
bra822
NXP Semiconductors RF Manual 14th edition
49
C-family application information
Application
Optical node
BGY588C
BGE788C
CGY888C
BGD712C
•
BGO807C
•
•
•
•
•
•
Optical receiver
Distribution amplifier
Line extender amplifier
Terminating amplifier
•
•
CGD944C
•
CGD942C
•
•
•
•
•
•
•
•
•
Push-pull amplifiers
Parameters
Power gain (dB)
typ.
BGY588C
34.5
BGE788C
34.2
CGY888C
35.5
BGY835C
34
Slope (dB)
range
0.2 - 1.7
0.3 - 2.3
1.5 typ.
1.5 typ.
Composite triple beat (dBc)
max.
-57
-49
-66
-60
Composite 2nd order distortion (dBc)
max.
-62
-52
-64
-55
Noise (@ f max ) (dB)
max.
8
8
3 typ.
7
Total current comsumption (mA)
typ.
325
305
280
340
range
40 - 550
40 - 750
40 - 870
40 - 870
Frequency range (MHz)
Power doublers
Parameters
Power gain (dB)
typ.
BGD712C
18.5
CGD944C
25
CGD942C
23
Slope (dB)
range
0.5 - 1.5
1-2
1-2
Composite triple beat (dBc)
max.
-62
-66
-66
Composite 2nd order distortion (dBc)
max.
-63
-67
-67
Noise (@ f max ) (dB)
max.
7
5
5
Total current comsumption (mA)
typ.
395
450
450
range
40 - 750
40 - 870
40 - 870
Frequency range (MHz)
Optical receiver
Parameters
Responsivity (V/W)
min.
BGO807C
800
BGO807CE
800
0-2
Slope (dB)
range
0-2
Third order intermodulation distortion (dB)
max.
-71
-71
Second order intermodulation distortion (dB)
max.
-54
-53
Noise (@ f max ) pA/Sqrt (Hz)
max.
8.5
8.5
Total current consumption (mA)
typ.
190
190
range
40 - 870
40 - 870
Frequency range (MHz)
Connector
50
NXP Semiconductors RF Manual 14th edition
- / SCO / FCO
2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C
Complete GaAs amplifier solutions for Chinese HFC networks
These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard,
provide complete functionality in a format that reduces chip-count and lowers overall cost.
Products
`` 870-MHz push-pull amplifier: CGY888C
`` 870-MHz power doublers: CGD942C (23-dB gain),
CGD944C (25-dB gain)
Features
`` GaAs HFET process for best performance and
lowest chip-count
`` Excellent linearity, stability, and reliability
`` High power gain
`` Extremely low noise
`` Excellent return-loss properties
Benefits
`` Fully compliant with Chinese SARFT HFC networks standard
`` Transparent cap confirms product authenticity
`` Rugged construction
`` Unconditionally stable
`` Thermally optimized design
Applications
`` Hybrid Fiber Coax (HFC) applications
`` Line extenders
`` Trunk amplifiers
`` Fiber deep-optical-node (N+0/1/2)
To support Chinese HFC CATV infrastructure applications
as a single-source supplier, NXP offers the C-family,
a complete line of dedicated RF amplifier modules that
deliver the very high level of performance required for
next-generation HFC TV networks.
The family includes the 870-MHz push-pull amplifier
CGY888C, a GaAs upgrade of NXP’s industry-leading
BGY888 and BGY835C products, and two 870-MHz power
doublers: the CGD942C, which has a typical gain of 23 dB,
and the CGD944C, with a typical gain of 25 dB.
The modules are flexible enough to connect rural
communities as part of China’s ‘Connect Every Village’
project, and powerful enough to upgrade major cities
from analog to high-end digital services.
The modules have been tested under Chinese raster conditions
and fully comply with the Chinese SRAFT standard. They also
cover most HFC applications in the range of 550 to 870 MHz
and are compatible with previous generations of NXP HFC
solutions, so they can be used to upgrade existing networks to
a higher level of performance.
Produced in NXP’s advanced GaAs HFET die process, the
modules deliver excellent linearity with extremely low noise,
and work seamlessly together. The GaAs process improves
performance and, by reducing chip count, saves overall cost.
It offers stronger signal strength than Si, so there are fewer
amplifiers required, and it provides superior ESD protection
compared to GaAs pHEMT processes, so there’s no need for
external TVS components. The CGY888C is well suited for
use in the last stage of an HFC network, which is known as
a terminating amplifier or a user amplifier since it is close to
subscribers.
The CGD942C and the CGD944C offer higher output power
and better CTB and CSO than other power doublers, so they
are ideal for use in HFC networks that have optical nodes with
multiple out-ports. The modules enable each port to cover at
least 125 subscribers directly.
All the C-family modules are delivered with transparent
caps that make it easy to distinguish them from
counterfeit products.
Unmatched new ESD protection levels:
All new standard NXP CATV SOT115 hybrids, power doublers
or push pulls, released in 2009 and onwards will have a build-in
extra protection on top of the existing one for very high level
ESD surges. Those surge levels will leave our devices without
any damage or destruction. Human body or biased ESD levels
will increase respectively to 2000 V and 1500 V which is making
now NXP CATV devices the most ESD robust product on the
market today.
NXP Semiconductors RF Manual 14th edition
51
2.8
Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
NXP high-gain power doublers CGD104xHi and push-pulls CGY104x
Designed for 1-GHz “sustainable networks,” these high-performance GaAs devices enable
extended bandwidth and higher data rates. They deliver increased network capacity and make way
for high-end services like HDTV, VoIP, and digital simulcasting.
Key features
`` Excellent linearity, stability, and reliability
`` High power gain for power doublers
`` Extremely low noise
`` Dark Green products
`` GaAs HFET dies for high-end applications
`` Rugged construction
`` Superior levels of ESD protection
`` Integrated ringwave protection
`` Design optimized for digital channel loading
`` Temperature compensated gain response
`` Optimized heat management
`` Excellent temperature resistance
Key benefits
`` Simple upgrade to 1-GHz capable networks
`` Low total cost of ownership
`` High power-stress capability
`` Highly automated assembly
Key applications
`` Hybrid Fiber Coax (HFC) applications
`` Line extenders
`` Trunk amplifiers
`` Fiber deep-optical-node (N+0/1/2)
`` Bridgers
52
NXP Semiconductors RF Manual 14th edition
New CATV GaAs platform lay-out
The NXP power doublers CGD104xH and CGD104xHi are ideal
for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
along with lower current.
The new NXP CGY1047x push-pull family is the first line-up on
the market combining very low noise, best-in-class distortion
parameters, and low “carbon footprint” capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO2 emissions
All of NXP’s 1-GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
The GaAs die is inserted in a HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the module’s
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26-dB power
gain with 60-dBmV output power and excellent ESD protection,
for the ultimate in high-quality, distortionless devices.
Quick reference data CATV 1 GHz power doublers and push pulls
CATV 1- GHz power doublers
Parameters
CGD1040Hi
CGD1042H
CGD1042Hi
CGD1044H
CGD1044Hi
CGD1046Hi*
Power gain (dB)
typ.
21
23
23
25
25
27
Slope cable equivalent (dB)
typ.
1.5
1.5
1.5
1
1.5
0.5 - 2.0
Composite triple beat (dB)
typ.
-69
-69
-69
-69
-69
-73
Composite 2nd order distortion (dB)
typ.
-68
-68
-68
-68
-68
-68
Noise (@fmax) (dB)
max.
6
6
6
6
6
5
Total current consumption (mA)
typ.
440
450
440
450
440
460
Frequency range (MHz)
range
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
CGY1041
CGY1043
CGY1049*
CATV 1-GHz push-pulls
Parameters
CGY1032*
Power gain (dB)
typ.
22
24
30
33
Slope cable equivalent (dB)
typ.
1.5
1.5
2
1.5
Composite triple beat (dB)
typ.
-62
-64
-62
-62
Composite 2nd order distortion (dB)
typ.
-62
-64
-64
-64
Noise (@fmax) (dB)
max.
5.5
5.5
4.5
4.5
Total current consumption (mA)
typ.
Frequency range (MHz)
range
250
250
250
250
40 - 1003
40 - 1003
40 - 1003
40 - 1003
* = check status at 3.1 new products, as this type has not been released yet for mass production.
CGD104xHi
PAD
H
L
OUT
port 1
H
L
OUT
port 2
H
L
OUT
port 3
H
L
OUT
port 4
CGD104xHi
PAD
PAD
(N + 1)
RF switch
EQ
CGD104xHi
PAD
CGD104xHi
PAD
bra822
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
NXP Semiconductors RF Manual 14th edition
53
2.9
Doherty amplifier technology for state-of-art wireless infrastructure
Best in class PA designs enable considerable energy savings
NXP’s latest power amplifier designs enable wireless infrastructure to run with significantly higher
energy efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies
currently possible, NXP combines its latest generations LDMOS technology (Gen6 & 7) with the
Doherty concept. This way, the optimized intrinsic performance of our LDMOS technology combines
perfectly with the extrinsic Doherty technology into very efficient, high gain, readily linearizable, and
lower operation cost power amplifiers.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely dormant because
the dominant mobile communication system modulation techniques (FM, GMSK and EDGE) did
not require high peak-to-average ratio (PAR) signals. However, the high power added efficiency
architecture of the Doherty amplifier has made it the preferred option for today's service providers
for base stations transmitting 3G, 4G or multi-carrier standards.
NXP’s Doherty amplifiers ensure high-efficiency while maintaining a very similar peak power
capability of two transistors combined. The input and output sections are internally matched,
benefiting the amplifier designs with high gain and good gain flatness and phase linearity over a
wide frequency band.
Integrated Doherty
NXP can even offer the world’s first fully integrated Doherty
designs: From the outside these devices look like an ordinary
transistor. In fact, they are completely integrated Doherty
amplifiers that deliver the highest efficiency levels for base
station applications. With the ease of design-in of an ordinary
class AB transistor, they also provide significant
space and cost savings.
54
NXP Semiconductors RF Manual 14th edition
Key features & benefits
`` Contains splitter, main- and peak amplifier, delay lines
and combiner in one package
- 40% efficiency @ 10 W average power
- no additional tuning in manufacturing
`` Design is as easy as with a single class AB transistor
`` Ideally suited for space-constrained applications
(e.g. remote radio heads, antenna arrays)
`` Currently available for TD-S-CDMA (BLD6G21L(S)-50) and
W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details
Discrete Doherty amplifiers
Next to the integrated versions, NXP also offers product
demonstrators for very efficient, high power, discrete 2- and
3- way Doherty amplifiers. The 2 way designs based on the
BLF7G22LS-130 device deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
Key features & benefits
`` Most efficient Doherty amplifier designs available to date
`` Production proven, very consistent designs
`` NXP’s LDMOS provides unsurpassed ruggedness
`` Currently available for the following frequency bands:
- 728 - 821 MHz
- 869 - 960 MHz
- 1805 - 1880 MHz (DCS)
- 1930 - 1990 MHz (PCS)
- 1880 - 2025 MHz (TD-SCDMA)
- 2110 - 2170 MHz (UMTS / LTE)
- 2300 - 2400 MHz (WiBRO / LTE)
- 2500 - 2700 MHz (WiMAX / LTE)
- 3300 - 3800 MHz (WiMAX)
All our product demonstrators are supported by
comprehensive support documentation and hardware.
Please see chapter 3.7.1.7 for a complete list of available
designs.
Our flagship 3-way Doherty demonstrator even achieves 48%
efficiency at 48 dBm (63 W) average output power and 15.0 dB
gain with a 2 carrier W-CDMA signal. The current design covers
the W-CDMA standard for band 1 operation and is tailored
towards high yield, minimum tuning, volume manufacturing.
Featured Doherty designs
Freq band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
Main transistor
Peak transistor
728-756
59.1
50.5
32
19
40
SYM
BLF6G10-260PM
BLF6G10-260PM
790-821
58
50
32
19
47
SYM
BLF6G10LS-200RN
BLF6G10LS-200RN
869-894
58
50
32
19
46
SYM
BLF6G10-200RN
BLF6G10-200RN
925-960
58.9
50
32
22
44
SYM / MMPP
BLF6G10-260PRN
BLF6G10-260PRN
1805-1880
58.2
50
28
16
42
SYM / MPPM
BLF7G20LS-250P
BLF7G20LS-250P
1930-1990
58
50
32
15.5
37
SYM
BLF6G20-230PRN
BLF6G20-230PRN
2110-2170
58
50
32
15
40
SYM
BLF6G22-180PN
BLF6G22-180PN
2300-2400
49.5
42
28
14.5
43
SYM
1/2 BLF7G27-75P
1/2 BLF7G27-75P
2500-2700
52.5
44.5
28
14
38
SYM
1/2 BLF6G27-150P
1/2 BLF7G27-150P
3400-3600
51
43
28
11.5
32
SYM
BLF6G38-50
BLF6G38-50
NXP Semiconductors RF Manual 14th edition
55
2.10
Boost efficiency and lower system cost in wireless infrastructure with GaN
NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort,
enables high-power amplifiers that deliver very high efficiency in next-generation wireless
communication systems.
Features
`` Power density that is up to five times higher than Si LDMOS
`` 50 V operation
`` High gain
`` High efficiency
`` High reliability
`` Low parasitics
Benefits
`` High frequency combined with high power
`` Broadband operation that lets a single power amplifier
function at multiple frequencies
`` Enabling technology for next-generation, high-power, Switch
Mode Power Amplifier (SMPA) architectures
`` Lowers system costs and operational expenditures
`` Ideal for tower-top base stations
Applications
`` Cellular base stations
`` WiMAX
`` Broadcast
`` Radar
Collaborating with United Monolithic Semiconductors and
the Fraunhofer Institute for Applied Solid State Physics, NXP
Semiconductors is developing a gallium-nitride (GaN) process
technology that boosts performance of next-generation RF
power amplifiers.
Most of today’s base station power amplifiers are limited to
specific applications. The new GaN-based technology lets
operators use a “universal transmitter” to switch between
systems and frequencies, so they can instantly meet demands
in the base station’s coverage area. GaN transistors enable
much more efficient power amplifiers and as a result drive
down the operational costs of telecom operators.
GaN transistors can operate at much higher junction
temperatures than Si- and GaAs-based devices, so GaN is
an ideal candidate for environments with reduced cooling
capabilities, such as tower-top base stations. Also, with its high
power densities, GaN has the potential to expand into other
areas, including high-power broadcast applications, where
solid-state power amplifiers built with vacuum tubes are still
the norm.
NXP’s first GaN broadband power amplifiers are expected
to be available in 2010, with Switch Mode Power Amplifiers
(SMPAs) following quickly thereafter.
Performance (targets)
Saturated output power at 50 V
100 W
Frequency
2.2 GHz
Maximum PAE
68%
Linear power gain
19 dB
2C-WCDMA linear efficiency with DPD
40% at –52 dBc IM3 at 8 dB OPBO
The new GaN process, with its high frequency combined
with high power, puts NXP in the ideal position of being able
to support future applications while continuing to evolve its
well-established LDMOS technology.
The GaN technology delivers numerous benefits to
manufacturers of infrastructure equipment. Using the GaN
technology in a transmitter represents a significant cost savings
in system manufacturing, along with major improvements in
system performance and flexibility.
Assembly of GaN power bar in standard ceramic package
56
NXP Semiconductors RF Manual 14th edition
2.11 Looking for the leader in SiGe:C? You've just found us!
NXP QUBiC4 process technology
NXP's innovative high performance SiGe:C QUBiC4 process allows customers to incorporate
more functionality into devices with less space, competitive cost, superb reliability and significant
manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability
speeds the migration from GaAs components to silicon by enabling cutting-edge products with
best in class low-noise performance, linearity, power consumption, immunity to out-of-band signals,
spurious performance and output power. NXP’s QUBiC is a mature process in mass production
since 2002 with continuous performance upgrades since then. The QUBiC4 process is automotive
qualified and dual sourced in two high volume NXP-owned 8 inch waferfabs providing flexible, low
cost manufacturing with high yields and very low ppm in the field.
QUBiC4 in 3 variants, each having it’s benefits for specific
application areas:
QUBiC4+
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic based
smart functionality, a rich set of active and passive devices for
high-frequency mixed-signal designs including thick top metal
layers for high quality inductors. The device set; includinges a
37 GHz FT NPNs with 3.8 V breakdown voltage (BVce0) and
low noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz
high voltage NPN with 5.9 V breakdown voltage, differential
and single ended varicaps with Q-factor>30, scalable
inductors with Q-factor>20, 800 MHz FT lateral PNP’s,
0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and
active resistors, a 270 ohm/sq. SiCr thin film resistor, a
5.7 fF/μm2 oxide capacitor and an 5 fF/μm2 MIM capacitor,
1 to 6 fF/μm2 oxide capacitors and various other devices
including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS
transistorscapacitor. The QUBiC4+ process is: silicon based
and , ideal for applications up to 5 GHz (Ft = 37 GHz ,
NF < 1.1 dB @ 1.2 GHz) and e.g. for medium power amplifiers
up to 33 dBm.
QUBiC4Xi
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers additionally a features a set of devices for
high-frequency mixed-signal designs; including 180 GHz FT
NPNs with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 @ 10 Ghz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MI capacitor.
QUBiC4Xi is the: newest SiGe:C process improved on Ft
(> 200 GHz) and even lower noise figure (NF < 0.5 7 dB @
10 GHz) and is, ideal for applications beyond 30 GHz, e.g.
LO generators.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C based extension
of the QUBiC process for high-frequency mixed signal designs
and offers on top of features the a rich set of devices for QUBiC
high-frequency mixed-signal designs; including also a 140 GHz
FT NPN with 2.5 V breakdown voltage and very low noise figure
(NF < 1.0 @ 10GHz). s, 0.25 μm CMOS, 220, a variety of resistors, a
5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
The QUBiC4X: first SiGe:C process is, ideal for applications
typically up to 30 GHz (Ft = 137 GHz , NF < 0.8dB @ 10 GHz)
and ultra low noise applications, e.g. LNAs and mixers.
NXP Semiconductors RF Manual 14th edition
57
QUBiC4Xi
SiGe:C
QUBiC4X
SiGe
ft/ fmax = 180/200 GHz
ft/ fmax = 137/180 GHz
+VPNP
+TFR
QUBiC4+
+DG
+HVNPN
BiCMOS
ft/f max = 37/90 GHz
Features
-4ML
QUBiC4/4+/4DG
Release for production
QUBiC4+
`` Baseline, 0.25um CMOS, single poly, 5 metal
`` Digital gate density 26k gates/mm2
`` fT/fMAX= 37/90 GHz
`` +TFR – Thin Film Resistor
`` +DG – Dual Gate Oxide MOS
`` +HVNPN – High Voltage NPN
`` +VPNP – Vertical PNP
`` -4ML – high density 5fF/µm2 MIM capacitor
`` Wide range of active and high quality passive devices
`` Optimized for up to 5GHz applications
QUBiC4X
`` SiGe:C process
`` fT/fMAX= 137/180 GHz
`` optimized for up to 15 GHz applications
QUBiC4Xi
`` Improves fT/fMAX up to 180/200 GHz
`` Optimized for ultra-low noise for microwave above 10 GHz
QUBiC4X
QUBiC4X
2002/2004/2006
2006
2008
CMOS 0.25um, Bipolar 0.4um,
Double poly, Deep trench, Si
CMOS 0.25um, Bipolar LV 0.4um,
Double poly, Deep trench, SiGe:C
CMOS 0.25um, Bipolar LV 0.3um,
Double poly, Deep trench, SiGe:C
37/90 (Si)
137/180 (SiGe:C)
180/200 (SiGe:C)
HV NPN Ft/Fmax (GHz)
28/70 (Si)
60/120 (SiGe:C)
tbd (SiGe:C)
NPN BVce0: HV/LV **
5.9 / 3.8 V
3.2 / 2.0 V
2.5 / 1.4 V
7 / >9
planned
planned
2.5 / 3.3 V
2.5 V
2.5 V
CMOS/Bipolar
LV NPN Ft/Fmax (GHz)
V-PNP Ft / BVcb0 (GHz / V)
CMOS Voltage /
Dual Gate
Noise figure NPN (dB)
RFCMOS Ft (GHz)
2GHz: 1.1
10GHz: 1.0
10GHz: 0.7
NMOS 58, PMOS 19
NMOS 58, PMOS 19
NMOS 58, PMOS 19
Isolation (60 dB @ 10 GHz)
STI and DTI
STI and DTI
STI and DTI
Interconnection
(AlCu with CMP W Plugs)
5 LM, 3 µm top Metal
5 LM, 3 µm top Metal
2 µm M4
5 LM, 3 µm top Metal
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr tbd
Poly (64/220/330/2K), Active (12, 57),
High Precision SiCr tbd
Varicaps (single-ended &
differential)
2x single ended, Q > 40
3x differential, Q 30-50
2x single ended, Q > 40
3x differential, Q 30-50
2x single ended, Q > 40
3x differential, Q 30-50
Inductors (1.5nH @ 2 Ghz)
- scalable
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Q > 21, Thick Metal, Deep trench isolation,
High R substrate
Other devices
LPNP, Isolated NMOS
LPNP, Isolated-NMOS tbd
LPNP, Isolated-NMOS tbd
Mask count
31 / 32 (MIM) / 33 (DG)
35 (MIM)
35 (MIM)
Capacitors
Resistors (Ohm/sq)
58
NXP Semiconductors RF Manual 14th edition
2.12 Microwave / Radar
NXP, your partner in High Performance microwave applications
NXP has a 50+ years history in semiconductor technology and component design. For more
than 3 decades we are leading in providing high performance RF technologies for microwave
applications. The company has built a strong position in the field of RF small signal and power
transistors for microwave amplifiers with a solid and growing, and best-in-class Si devices and
processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 - 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we currently develop new high
power and high-bandwidth technologies based on gallium
nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process QUBiC
that is available in several variants with fT up to 200 GHz, each
specialized to address specific small signal RF applications.
The product portfolio encompasses:
- Low noise amplifiers (LNA)
- Variable gain amplifiers (VGA)
- Mixers,
- Local oscillators (LO)
- LO Generators
Coming from a component background, NXP now also focuses
on architectural breakthroughs by highly integrated products
for microwave and millimeter wave. One example is a family of
LO Generators from 7G Hz to 15 GHz with integrated
Phase-Locked Loop and Voltage Controlled Oscillator.
Another example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W. Both products are highlighted in the
following:
Features
`` Lowest noise LO generators for 7 to 15 GHz range
`` Maximum power consumption for all types, typical 330 mW
`` Phase-noise compliant with IESS-308 (Intelsat)
`` Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`` External loop filter
`` Differential input and output
`` Lock-detect output
`` Internally stabilized voltage reference for loop filter
RF Power product highlight !
The BLS6G2933P-200 is the first LDMOS based, industry
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
RF small signal product highlight:
LO generators TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators are low-power, low-spurious solutions that simplify
design-in and lower the total cost of ownership.
NXP Semiconductors RF Manual 14th edition
59
Features:
`` Reduces component count and considerably simplifies radar
system design
`` P1 dB output power 200 W
`` Efficiency > 40%
`` Industry standard footprint
`` 50 Ω in/out matched for entire bandwidth
`` Lightweight heat sink included
`` The advantages of LDMOS in comparison with Bipolar
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Very consistent performance – no tuning required
- Improved thermal characteristics, no thermal runaway
- Non-toxic packaging and ROHS compliance
For a complete list of products see the respective small
signal and power microwave pages
60
NXP Semiconductors RF Manual 14th edition
Microwave applications and bands of operation
System
VHF and UHF
L-Band
Frequency
<1 GHz
1200 - 1400 MHz
S-Band
2700 - 3500 MHz
X-band
8000 - 12000 MHz
Commercial Avionics
DME (Distance Measuring Equipment)
978 - 1215 MHz
Transponders
Mode A / Mode S / Mode C / TCAS
1030 - 1090 MHz
Military Avionics
IFF Transponders (Identification, Friend or Foe)
1030 - 1090 MHz
TACAN (Tactical Air Navigation)
960 - 1215 MHz
JTIDS / MIDS
(Joint Tactical Information Distribution System)
960 - 1215 MHz
Marine radar
9300 - 9500 MHz
2.13 Digital broadcasting at its best
The BLF881 / BLF888 transistor line-up enables today’s most powerful and
efficient digital broadcast transmitter applications
BLF881
The transistor is based on NXP’s new 50V LDMOS technology,
and features 140 W RF output power for broadcast transmitter
and industrial applications. An unmatched device, the BLF881
can be used in the HF to 1 GHz range. The excellent
ruggedness and broadband performance of this device makes
it ideal for digital transmitter applications – either stand alone
or as a driver in combination with the high-power transistor
BLF888.
The BLF881 is also available in an earless version: BLF881S,
enabling an even more compact PCB design.
BLF888
Also based on the new 50 V technology created by NXP, the
BLF888 is the most powerful LDMOS broadcast transistor
to date. The 500 W LDMOS device is specifically designed
for digital broadcast transmitter applications. The transistor
delivers 110 W average power for a DVB-T signal over the full
UHF band from 470 MHz to 860 MHz. The excellent efficiency
and ruggedness of this device makes it ideal as the final stage
for advanced digital transmitter applications
Key benefits
`` 50 V operations to achieve highest power levels in the
market
`` Best-in-class ruggedness designed into all devices
`` Best broadband efficiency
`` Best-in-class design support
`` Very low thermal resistance design for unrivalled reliability
typ. 0.5 kW
DVB-T
Driver stages
Key applications
`` Analogue and digital TV transmitters
Device
BLF881(S)
BLF888
frange
PL(AV)
nD
Gp
@VDS
(MHz)
W
%
dB
V
8 × final
Mode of
operation
0 - 1000
120
48
21
50
2-TONE
0 - 1000
30
31
21
50
DVB-T
470 - 860
250
46
19
50
2-TONE
470 - 860
110
31
19
50
DVB-T
TV exciter
DVB-T
harmonic
filter
typ. 5 kW DVB-T
output power
power
monitor
amplifiers
brb339
NXP Semiconductors RF Manual 14th edition
61
3. Product portfolio
NXP RF product catalog:
http://www.nxp.com/rf
3.1
New products
DEV = In development
CQS = Customer qualification samples
RFS = Release for supply
Status
May 2010
Planned
release
Chapter
RFS
RFS
Released
Released
3.2.2
3.2.2
NEW: SiGe:C transistors
BFU610F
6st generation wideband transistor
BFU630F
6st generation wideband transistor
BFU660F
6st generation wideband transistor
BFU690F
6st generation wideband transistor
BFU710F
7th generation wideband transistor
BFU730F
7th generation wideband transistor
BFU760F
7th generation wideband transistor
BFU790F
7th generation wideband transistor
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
Q4 2010
Q4 2010
Q4 2010
Q4 2010
Q4 2010
Q4 2010
Q4 2010
Q4 2010
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
NEW: Automotive Qualified Wideband MMIC and transistors
BGA2002
Low noise wideband amplifier MMIC
BFR94A
RF wideband transistor
BFR94AW
RF wideband transistor
RFS
RFS
RFS
Released
Released
Released
3.4.1
3.3.1
3.3.1
NEW: SiGe:C MMICs LNA's for GPS and STB
BGU7005
SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB
BGU7006
SiGe:C MMIC, GPS LNA in wafer level chip-scale package (WLCSP)
BGU7007
SiGe:C MMIC, incl matching output for GPS LNA, 18 dB
BGU7031
SiGe:C LNA for STB tuning
BGU7032
SiGe:C LNA for STB tuning
BGU7033
SiGe:C LNA for STB tuning
RFS
DEV
DEV
CQS
CQS
CQS
Released
Q4 2010
Q1 2011
Q3 2010
Q3 2010
Q3 2010
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
NEW: Mosfets
BF1215
BF1216
BF1217
BF1218
BF1118 series
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
NEW: Medium power amplifier MMICs
BGA7124
Medium power amplifier, 24 dBm P1dB, leadless SOT908
BGA7024
Medium power amplifier, 24 dBm P1dB, leaded SOT89
BGA7127
Medium power amplifier, 27 dBm P1dB, leadless SOT908
BGA7027
Medium power amplifier, 27 dBm P1dB, leaded SOT89
BGA7130
Medium power amplifier, 30 dBm P1dB, leadless SOT908
BGA7133
Medium power amplifier, 33 dBm P1dB, leadless SOT908
RFS
RFS
RFS
RFS
DEV
DEV
Released
Released
Released
Released
Q1 2011
Q1 2011
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
NEW: Variable Gain Amplifiers (VGA)
BGA7350
Dual IF VGA, control range 24 dB
BGA7351
Dual IF VGA , control range 28 dB
BGA7202
Tx RF VGA, 0.7 - 2.2 GHz
BGA7203
Tx RF VGA , 2.1 - 2.8 GHz
BGA7204
Tx RF VGA, 0.7 - 2.8 GHz
DEV
DEV
DEV
DEV
DEV
Q4 2010
Q1 2011
Q4 2010
Q1 2011
Q1 2011
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
NEW: SiGe:C LNA's for wireless infrastructures
BGU7051
Low Noise Amplifier 900 MHz
BGU7052
Low Noise Amplifier 1.9 GHz
BGU7053
Low Noise Amplifier 2.5 GHz
BGU7054
Low Noise Amplifier 3.5 GHz
DEV
DEV
DEV
DEV
Q1 2011
Q2 2011
Q2 2011
Q3 2011
3.4.1
3.4.1
3.4.1
3.4.1
Type
NEW: RF diodes
BAP64Q
BAP70Q
62
Application / Description
Quad pin diodes for e.g. discrete attenuators
Quad pin diodes for e.g. discrete attenuators
Double mosfet for STB tuning, world class cross modulation performance
Double mosfet for STB tuning, world class cross modulation performance
Single mosfet for STB tuning, world class cross modulation performance
Double mosfet for TV tuning
Mosfet RF switches for antenna loop through
NXP Semiconductors RF Manual 14th edition
Status
May 2010
Planned
release
Chapter
NEW: RF IC's & MMICs for e.g. satellite, VCO/PLL
BGA2800
Satellite IF gain block
BGA2801
Satellite IF gain block
BGA2815
Satellite IF gain block
BGA2816
Satellite IF gain block
BGA2850
Satellite IF gain block
BGA2865
Satellite IF gain block
BGA2866
Satellite IF gain block
TFF1003HN
Low noise LO generator for VSAT applications
TFF1007HN
Low noise LO generator for VSAT applications
TFF11070HN
Low noise LO generator for general microwave applications
TFF11073HN
Low noise LO generator for general microwave applications
TFF11077HN
Low noise LO generator for general microwave applications
TFF11080HN
Low noise LO generator for general microwave applications
TFF11084HN
Low noise LO generator for general microwave applications
TFF11088HN
Low noise LO generator for general microwave applications
TFF11092HN
Low noise LO generator for general microwave applications
TFF11096HN
Low noise LO generator for general microwave applications
TFF11101HN
Low noise LO generator for general microwave applications
TFF11105HN
Low noise LO generator for general microwave applications
TFF11110HN
Low noise LO generator for general microwave applications
TFF11115HN
Low noise LO generator for general microwave applications
TFF11121HN
Low noise LO generator for general microwave applications
TFF11126HN
Low noise LO generator for general microwave applications
TFF11139HN
Low noise LO generator for general microwave applications
TFF11145HN
Low noise LO generator for general microwave applications
TFF11152HN
Low noise LO generator for general microwave applications
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
Released
Released
Released
Released
Released
Released
Released
Released
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
Q3 2010
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
NEW: RF CATV modules
CGY1041
1 GHz, 21 dB gain Push Pull, GaAs HFET SOT115
CGY1043
1 GHz, 23 dB gain Push Pull, GaAs HFET SOT115
CGY1049
1 GHz, 29 dB gain Push Pull, GaAs HFET SOT115
CGY1032
1 GHz, 32 dB gain Push Pull, GaAs HFET SOT115
CGD1046Hi
1 GHz, 26 dB gain Power Doubler, GaAs HFET SOT115
BGO807CE
870 MHz, forward path optical receiver, SOT115
CQS
CQS
DEV
DEV
CQS
RFS
Q2 2010
Q2 2010
Q3 2010
Q3 2010
Q2 2010
Released
3.6.2
3.6.2
3.6.2
3.6.2
3.6.3
3.6.4
NEW: RF High Speed Data Converters
ADC1613D series
Dual 16-bit ADC up to 65/80/105/125Msps with serial interface
ADC1610S series
Single 16-bit ADC up to 65/80/105/125Msps
ADC1415S series
Single 14-bit ADC up to 65/80/105/125Msps with input buffer
ADC1413D series
Dual 14-bit ADC up to 65/80/105/125Msps with serial interface
ADC1412D series
Dual 14-bit ADC up to 65/80/105/125Msps
ADC1410S series
Single 14-bit ADC up to 65/80/105/125Msps
ADC1215S series
Single 12-bit ADC up to 65/80/105/125Msps with input buffer
ADC1213D series
Dual 12-bit ADC up to 65/80/105/125Msps with serial interface
ADC1212D series
Dual 12-bit ADC up to 65/80/105/125Msps
ADC1210S series
Single 12-bit ADC up to 65/80/105/125Msps
ADC1115S125
Single 11-bit ADC up to 125Msps with input buffer
ADC1113D125
Dual 11-bit ADC up to 125Msps with serial interface
ADC1015S series
Single 10-bit ADC up to 65/80/105/125Msps with input buffer
ADC1010S series
Single 10-bit ADC up to 125Msps
DAC1408D series
Dual 14-bit DAC up to 650/750 Msps
DAC1405D series
Dual 14-bit DAC up to 650/750 Msps
DAC1208D series
Dual 12-bit DAC up to 650/750 Msps
DAC1205D series
Dual 12-bit DAC up to 650/750 Msps
DAC1008D series
Dual 10-bit DAC up to 650/750 Msps
DAC1005D series
Dual 10-bit DAC up to 650/750 Msps
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
CQS
RFS
CQS
RFS
CQS
RFS
Released
Released
Released
Released
Q3 2010
Released
Released
Released
Q3 2010
Released
Released
Released
Released
Released
Q3 2010
Released
Q3 2010
Released
Q3 2010
Released
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
NEW: RF Power cellular transistors
BLF7G24L(S)-100(G)
Power Gen7 LDMOS transistor for base station applications
BLF7G27L(S)-75P
Power Gen7 LDMOS transistor for base station applications
BLF7G27L(S)-50BN
Power LDMOS transistor for base station applications
BLF7G27L(S)-100
Power Gen7 LDMOS transistor for base station applications
BLF7G27L(S)-140
Power Gen7 LDMOS transistor for base station applications
BLF7G22L(S)-250P
Power Gen7 LDMOS transistor for base station applications
BLF7G20L(S)-300P
Power Gen7 LDMOS transistor for base station applications
BLF7G20L(S)-200
Power Gen7 LDMOS transistor for base station applications
BLF7G20L(S)-250P
Power Gen7 LDMOS transistor for base station applications
BLF6G10L(S)-40BRN
Power LDMOS transistor for base station applications
BLF6G10L(S)-260PRN
Power LDMOS transistor for base station applications
BLF6G07L(S)-260PBM Power LDMOS transistor for base station applications
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
Q4 2010
Q2 2010
Q2 2010
Q2 2010
Q3 2010
Q2 2010
Q3 2010
Q3 2010
Q3 2010
Q2 2010
Q2 2010
Q2 2010
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.3
3.7.1.2
3.7.1.2
3.7.1.2
3.7.1.1
3.7.1.1
3.7.1.1
NEW: RF Power Broadcast transistors
BLF573
High Voltage RF Power transistor for broadcast/ISM
BLF888A(S)
High Voltage RF Power transistor for broadcast/ISM
DEV
DEV
Q2 2010
Q3 2010
3.7.2.1
3.7.2.1
NEW: RF Power Microwave transistors
BLS7G2729S-300P
RF Power transistors for S band
BLS6G2933P-200
High voltage RF Power pallet for S band
BLS7G2731P-200
High voltage RF Power pallet for S band
DEV
DEV
DEV
Q4 2010
Q3 2010
Q4 2010
3.7.3.3
3.7.3.3
3.7.3.3
Type
Application / Description
NXP Semiconductors RF Manual 14th edition
63
3.2
RF diodes
3.2.1 Varicap diodes
NEW : Varicap selection guide on www.nxp.com/varicaps
Easy-to-use parametric filters help you to choose
the right varicap for your design.
Why choose NXP semiconductors’ varicap diodes:
`` Reference designs for TV and radio tuning
`` Direct matching process
`` Small tolerances
`` Short leadtimes
`` Complete portfolio covering broad frequency range and variety in package (including leadless)
`` Reliable volume supply
VCO and FM radio tuning varicap diodes
@ f = 1 MHz
Type
Package
Number
of
diodes
BB145B
BB156
BB198
BB199
BB201
BB202^^
BB202LX^^
BB207^
BB208-02^
BB208-03^
SOD523
SOD323
SOD523
SOD523
SOT23
SOD523
SOD882T
SOT23
SOD523
SOD323
1
1
1
1
2
1
1
2
1
1
Configuration
SG
SG
SG
SG
CC
SG
SG
CC
SG
SG
Cd
min
Cd
typ
Cd
max
@ VR
=
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
6.4
14.4
25
36.5
89
28.2
28.2
76
19.9
19.9
16
95
81
-
7.2
17.6
28.5
42.5
102
33.5
33.5
86
23.2
23.2
(V)
(pF)
(pF)
(pF)
1
1
1
0.5
1
0.2
0.2
1
1
1
2.55
4.2
4.8
11.8
25.5
7.2
7.2
25.5
4.5
4.5
4.8
27.6
27.6
-
2.95
5.4
6.8
13.8
29.7
11.2
11.2
29.7
5.4
5.4
^ = Including special design for FM car radio (CREST-IC:TEF6860).
^^ = Including special design for mobile phone tuner ICs.
rs
typ
rs
max
@f=
(V)
(Ω)
(Ω)
(MHz)
4
7.5
2
7.5
2.3
2.3
7.5
7.5
7.5
0.4
0.25
0.25
0.35
0.35
0.2
0.35
0.35
0.6
0.7
0.8
0.5
0.6
0.4
0.5
0.5
470
470
100
100
100
100
100
100
100
100
Cd1/
Cd2
max
@ V1
=
@ V2
=
(V)
Cd1/
Cd2
min
(V)
4
7.5
4
2
7.5
2.3
2.3
7.5
7.5
7.5
2.2
2.7
2.8
3.1
2.5
2.5
2.6
3.7
3.7
3.9
3.8
3.3
5.2
5.2
1
1
0.5
1
0.2
0.2
1
1
1
Type of connection:
SG: Single
CC: Common Cathode
TV / VCR / DVD / HDD varicap diodes - UHF tuning
@ f = 1 MHz
Type
Package
Matched
BB149
BB149A
BB179
BB179B
BB179BLX
BB179LX
BB184
BB189
Unmatched
BB135
SOD323
SOD323
SOD523
SOD523
SOD882T
SOD882T
SOD523
SOD523
SOD323
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
(V)
1.9
1.951
1.951
1.9
1.9
1.95
1.87
1.89
2.1
2.1
2.1
2.1
2.1
2
2.04
2.25
2.225
2.225
2.25
2.25
2.22
2.13
2.18
1.7
-
2.1
Bold = Highly recommended product
64
NXP Semiconductors RF Manual 14th edition
rs
typ
rs
max
@f=
@
Cd =
(V)
(Ω)
(Ω)
(MHz)
(pF)
1
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
0.6
0.6
0.6
0.65
0.65
0.65
0.65
0.75
0.75
0.75
0.75
0.7
470
470
470
470
470
470
470
470
9
9
9
9
9
30
9
9
0.5
28
-
0.75
470
9
@ V1
=
@ V2
=
(V)
10
10.9
10.9
10
10.9
12
Cd1/Cd2
min
Cd1/Cd2
typ
Cd1/Cd2
max
28
28
28
28
28
28
10
25
8.2
8.45
8.45
8.45
8.45
6
6.3
9
9
9
9
9
9
7
7.3
28
8.9
-
@ V1
=
@ V2
=
(V)
(V)
2
2
2
2
2
2
2
1.8
0.5
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
10
10
10
10
10
5
5
10
-
-
-
-
∆Cd/
Cd
@
Ns
=
TV / VCR / DVD / HDD varicap diodes - VHF tuning
@ f = 1 MHz
Type
Matched
BB148
BB152
BB153
BB178
BB178LX
BB182
BB182LX
BB187
BB187LX
Unmatched
BB131
BB181
BB181LX
BBY40
Cd
min
Cd
typ
Cd
max
@ VR
=
(pF)
(pF)
(pF)
SOD323
SOD323
SOD323
SOD523
SOD882T
SOD523
SOD882T
SOD523
SOD882T
2.4
2.48
2.361
2.361
2.36
2.48
2.48
2.57
2.57
2.6
2.7
2.6
2.6
2.6
2.7
2.7
2.75
2.75
SOD323
SOD523
SOD882T
SOT23
0.7
0.7
0.7
4.3
-
Package
rs
typ
rs
max
@f=
@ Cd
=
(V)
(Ω)
(Ω)
(MHz)
(pF)
1
1
1
1
1
1
1
2
2
28
28
28
28
28
28
28
25
25
1
0.65
0.65
0.7
1
1
-
0.9
1.2
0.8
0.8
1.2
0.75
0.75
100
100
100
100
470
100
100
470
470
12
30
30
30
30
30
30
-
0.5
0.5
0.5
3
28
28
28
25
2
-
3
3
0.7
470
470
470
200
9
9
9
25
Cd1/
Cd2
typ
Cd1/
Cd2
max
@ V1
=
@ V2
=
(V)
Cd1/
Cd2
min
(V)
2.75
2.89
2.754
2.754
2.75
2.89
2.89
2.92
2.92
28
28
28
28
28
28
28
25
25
14.5
20.6
13.5
13.5
13.5
20.6
11
11
15
22
15
15
15
22
22
-
-
1.055
1.055
1.055
6
28
28
28
25
12
12
5
14
-
16
16
6.5
@ V1
=
@ V2
=
(V)
(V)
2
2
2
2
2
2
2
2
2
0.5
1
1
1
1
1
1
2
2
28
28
28
28
28
28
28
25
25
10
10
10
10
5
10
10
10
10
-
-
-
-
∆Cd/
Cd
@ Ns
=
Bold = Highly recommended product
3.2.2 PIN diodes
brb407
700
Freq = 100 MHz, Cd @ VR = 0 V
rD @ 0.5 mA
rD @ 10 mA
Cd
(fF)
NEW : Pin diode selection guide on www.nxp.com/pindiodes
Easy-to-use parametric filters help you to choose the
right pin diode for your design.
600
BAP65LX
BAP65LX
500
400
BAP50LX
BAP63LX
BAP63LX
BAP1321LX
BAP51LX
BAP51LX BAP1321LX
BAP142LX
BAP142LX
300
Why choose NXP Semiconductors’ PIN diodes:
} Broad portfolio
} Unrivalled performance
} Short leadtimes
} Low series inductance
} Low insertion loss
} Low capacitance
200
BAP50LX
BAP64LX
BAP70-02
BAP64LX
BAP70-02
100
0
10−1
1
102
10
rD (Ω)
brb408
25
Freq = 1800 MHz, Isolation @ VR = 0 V
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
Isolation
(dB)
20
BAP70-20
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
15
10
BAP65LX
5
0
10−2
BAP70-02
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP1321LX
BAP63LX
BAP65LX
10−1
1
10
Insertion Loss (dB)
Look for more graphs showing the Pin diode line-up at other
frequencies on our web site: www.nxp.com/pindiodes
PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes
@ f = 100 MHz
Type
BAP65LX
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP63LX
BAP63-02
BAP63-03
BAP63-05W
Package
SOD882T
SOD523
SOD323
SOT23
SOT323
SOD882T
SOD523
SOD323
SOT323
Number of
diodes
Conf
1
1
1
2
2
1
1
1
2
SG
SG
SG
CC
CC
SG
SG
SG
CC
VR max
(V)
IF max
(mA)
30
30
30
30
30
50
50
50
50
100
100
100
100
100
100
100
100
100
@ IF = 0.5 mA
@ IF = 1 mA
@ f = 1 MHz
@ IF = 10 mA
@ VR
=0V
@ VR = 1 V
@ VR = 20 V
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
rD
typ
(Ω)
rD
max
(Ω)
Cd
typ
(pF)
Cd
typ
(pF)
Cd
max
(pF)
Cd
typ
(pF)
Cd max
(pF)
2.3
2.5
2.5
2.5
3.3
3.5
3.5
3.5
0.94
1
1
1
1
1.87
1.95
1.95
1.95
3
3
3
3
0.49
0.56
0.56
0.56
0.56
1.19
1.17
1.17
1.17
0.9
0.9
0.9
0.9
0.9
1.8
1.8
1.8
1.8
0.61
0.65
0.65
0.7
0.7
0.34
0.36
0.4
0.4
0.48
0.55
0.55
0.575
0.575
0.29
0.32
0.35
0.35
0.85
0.9
0.9
0.9
0.9
-
0.37
0.375
0.375
0.425
0.425
0.24
0.25
0.27
0.3
0.3
0.32
0.32
0.35
NXP Semiconductors RF Manual 14th edition
65
PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes
@ f = 100 MHz
Type
Package
BAP55LX
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
Number of
diodes
Conf
VR max
(V)
IF max
(mA)
1
1
1
2
1
1
SG
SG
SG
SR
SG
SG
50
60
60
60
60
50
100
100
100
100
100
100
SOD882T
SOD523
SOD323
SOT23
SOD882T
SOD882T
@ IF = 0.5 mA
rD
typ
(Ω)
3.3
3.4
3.4
3.4
3.3
3.3
rD
max
(Ω)
4.5
5
5
5
5
5
@ IF = 1 mA
rD
typ
(Ω)
2.2
2.4
2.4
2.4
2.4
2.4
@ IF = 10 mA
rD
max
(Ω)
3.3
3.6
3.6
3.6
3.6
3.6
rD
typ
(Ω)
0.8
1.2
1.2
1.2
1.2
1
rD
max
(Ω)
1.2
1.8
1.8
1.8
1.8
1.8
@ f = 1 MHz
@ VR
@ VR = 20 V
@ VR = 1 V
=0V
Cd
Cd
Cd
Cd
Cd max
typ
typ
max
typ
(pF)
(pF)
(pF)
(pF)
(pF)
0.28
0.23
0.18
0.28
0.4
0.35
0.45
0.25
0.32
0.4
0.35
0.45
0.25
0.32
0.42
0.375
0.45
0.275
0.325
0.32
0.27
0.38
0.21
0.28
0.25
0.22
0.16
0.26
PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes
@ f = 100 MHz
Type
Package
BAP51LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
Number
of diodes
Conf
1
1
1
2
2
2
SG
SG
SG
SR
CC
CA
SOD882T
SOD523
SOD323
SOT323
SOT323
SOT323
VR max
(V)
IF max
(mA)
60
60
50
50
50
50
100
50
50
50
50
50
@ IF = 0.5 mA
rD
typ
(Ω)
4.9
5.5
5.5
5.5
5.5
5.5
rD
max
(Ω)
9
9
9
9
9
-
@ IF = 1 mA
rD
typ
(Ω)
3.2
3.6
3.6
3.6
3.6
3.6
@ f = 1 MHz
@ IF = 10 mA
rD
max
(Ω)
6.5
6.5
6.5
6.5
6.5
-
rD
typ
(Ω)
1.4
1.5
1.5
1.5
1.5
2
rD
max
(Ω)
2.5
2.5
2.5
2.5
2.5
-
@ VR
=0V
Cd
typ
(pF)
0.3
0.4
0.4
0.4
0.4
0.4
@ VR = 1 V
Cd
typ
(pF)
0.22
0.3
0.3
0.3
0.3
0.3
Cd
max
(pF)
0.4
0.55
0.55
0.55
0.55
-
@ VR = 20 V
Cd
typ
(pF)
0.17
0.2
0.2
0.2
0.2
0.2
Cd max
(pF)
0.3
0.35
0.35
0.35
0.35
-
PIN diodes : typical rD @ 1 mA = 10, attenuator/swithcing diodes
@ f = 100 MHz
Type
Package
BAP64Q
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
Number
of diodes
Conf
4
1
1
2
2
2
2
2
2
SR
SG
SG
SR
SR
CC
CC
CA
CA
SOT753
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
VR max
(V)
IF max
(mA)
100
175
175
175
100
175
100
175
100
100
100
100
100
100
100
100
100
100
@ IF = 0.5 mA
rD
typ
(Ω)
20
20
20
20
20
20
20
20
20
rD
max
(Ω)
40
40
40
40
40
40
40
40
40
@ f = 1 MHz
@ IF = 1 mA
rD
typ
(Ω)
10
10
10
10
10
10
10
10
10
@ VR =
0V
Cd
rD
max
typ
(Ω)
(pF)
3,8
0.52
3.8
0.48
3.8
0.48
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
3.8
0.52
@ IF = 10 mA
rD
max
(Ω)
20
20
20
20
20
20
20
20
20
rD
typ
(Ω)
2
2
2
2
2
2
2
2
2
@ VR = 1 V
Cd
typ
(pF)
0.37
0.35
0.35
0.37
0.37
0.37
0.37
0.37
0.37
Cd
max
(pF)
-
@ VR = 20 V
Cd
typ
(pF)
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
Cd max
(pF)
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes
@ f = 100 MHz
Type
Package
Number
of diodes
BAP50-02
SOD523
1
BAP50-03
SOD323
1
BAP50-04
SOT23
2
BAP50-04W SOT323
2
BAP50-05
SOT23
2
BAP50-05W SOT323
2
BAP50LX
SOD882T
1
BAP64LX^ SOD882T
1
^ = attenuator / switching diode
Conf
VR max
(V)
IF
max
(mA)
SG
SG
SR
SR
CC
CC
SG
SG
50
50
50
50
50
50
50
60
50
50
50
50
50
50
50
100
@ IF = 0.5 mA
rD
typ
(Ω)
25
25
25
25
25
25
26
31
rD
max
(Ω)
40
40
40
40
40
40
40
50
@ IF = 1 mA
rD
typ
(Ω)
14
14
14
14
14
14
14
16
rD
max
(Ω)
25
25
25
25
25
25
25
26
@ f = 1 MHz
@ VR =
@ IF = 10 mA
0V
Cd
rD
rD
max
typ
typ
(Ω)
(Ω)
(pF)
3
5
0.4
3
5
0.4
3
5
0.45
3
5
0.45
3
5
0.45
3
5
0.45
3
5
0.4
2.6
4.4
0.48
@ VR = 1 V
Cd
typ
(pF)
0.3
0.3
0.35
0.35
0.3
0.35
0.28
0.34
Cd
max
(pF)
0.55
0.55
0.6
0.6
0.5
0.6
0.55
-
Cd
typ
(pF)
Cd
max
(pF)
@ VR =
(V)
0.22
0.2
0.3
0.3
0.35
0.3
0.19
0.17
0.35
0.35
0.5
0.5
0.6
0.5
0.35
0.3
5
5
5
5
1
5
5
20
PIN diodes : typical rD @ 1 mA = 40, attenuator diodes
@ f = 100 MHz
Type
Package
BAP70Q
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
SOT753
SOD523
SOD323
SOT323
SOT23
SOT363
Number
of diodes
Conf
VR max
(V)
IF max
(mA)
4
1
1
2
2
4
SR
SG
SG
SR
CC
SR
50
50
50
50
50
50
100
100
100
100
100
100
Bold = highly recommended product
Bold Red = New, highly recommended product
66
NXP Semiconductors RF Manual 14th edition
@ IF = 0.5 mA
SG = Single
SR = Series
rD
typ
(Ω)
77
77
77
77
77
77
rD
max
(Ω)
100
100
100
100
100
100
@ IF = 1 mA
rD
typ
(Ω)
40
40
40
40
40
40
@ f = 1 MHz
@ IF = 10 mA
rD
max
(Ω)
50
50
50
50
50
50
CC = Common Cathode
CA = Common Anode
rD
typ
(Ω)
5.4
5.4
5.4
5.4
5.4
5.4
rD
max
(Ω)
7
7
7
7
7
7
@ VR
=0V
Cd
typ
(pF)
0.6
0.57
0.57
0.6
0.6
0.57
@ VR = 1 V
Cd
typ
(pF)
0.43
0.4
0.4
0.43
0.43
0.4
Cd
max
(pF)
-
@ VR = 20 V
Cd
max
(pF)
0.25
0.2
0.2
0.25
0.25
0.2
Cd
typ
(pF)
0.3
0.25
0.25
0.3
0.3
0.25
3.2.3 Band-switch diodes
Why choose NXP Semiconductors’ bandswitch diodes:
`` Reliable volume supplier
`` Short leadtimes
`` Low series Inductance
`` Low Insertion loss
`` Low capacitance
`` High reverse Isolation
Type
Package
VR max
(V)
IF max
(mA)
rD max
(Ω)
@ IF =
(mA)
@f=
(MHz)
Cd max
(pF)
@ VR =
(V)
@f=
(MHz)
BA277
BA591
BA891
BAT18
SOD523
SOD323
SOD523
SOT23
35
35
35
35
100
100
100
100
0.7
0.7
0.7
0.7
2
3
3
5
100
100
100
200
1.2
0.9
0.9
1
6
3
3
20
1
1
1
1
Bold= Highly recommended product
3.2.4 Schottky diodes
NEW :Schottky diode selection guide on www.nxp.com/rfschottkydiodes
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
Why choose NXP Semiconductors’ schottky diodes
`` (Very) low diode capacitance
`` (Very) low forward voltage
`` Single and triple-isolated diode
`` (Ultra / very) small package
Applications
} Digital applications:
- ultra high-speed switching
- clamping circuits
} RF applications:
- diode ring mixer
- RF detector
- RF voltage doubler
Low-capacitance Schottky diodes
Type
Package
Configuration
BAT17
PMBD353
PMBD354^
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
SOT23
SOT23
SOT23
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
single
dual series
dual series
single
triple isolated
single
triple isolated
single
dual series
dual c.c
dual c.a.
triple isolated
single
VR max.
(V)
4
4
4
4
4
4
15
15
15
15
15
15
15
IF max.
(mA)
30
30
30
30
30
30
30
30
30
30
30
30
30
VF max.
(mV)
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
CD max.
(pF)
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
^ Diodes have matched capacitance
NXP Semiconductors RF Manual 14th edition
67
3.3
RF Bipolar transistors
3.3.1 Wideband transistors
NEW : RF wideband transistor selection guide on www.nxp.com/rftransistors
Easy-to-use parametric filters help you to choose the right RF wideband
transistor for your design.
Why choose NXP Semiconductors’ wideband transistors
st
th
`` Broad portfolio (1 - 7 generation)
`` Short leadtimes
`` Smallest packages
`` Volume delivery
Wideband transistors
The fT-IC curve represents Transition Frequency (fT)
characteristics as a function of collector current (IC) for the six
generations of RF wideband transistors. A group of transistors
having the same collector current (IC) & similar transition
frequencies (fT) represents a curve. The curve number matches
products in the table, detailing their RF characteristics.
Wideband transistors line-up per frequency
bra510
100
(38)
(39)
(40)
(33)
fT
(GHz)
7th generation
(34)
(35)
(25)
(37)
6th generation
(29)
(32)
(31)
(30)
10
(36)
(27)
(26)
(21)
(20)
(19)
(15)
(14)
(22)
3rd generation
(11)
(7)
(9)
(8)
2nd generation
(1)
0.2
PIN
1
2
3
4
1
2
3
4
1
2
3
4
0.5
1
(3)
2
DECRIPTION
Type (see Fig.1)
collector
base
emitter
emitter
Type/X (see Fig.1)
collector
emitter
base
emitter
Type/XR (see Fig.2)
collector
emitter
base
emitter
NXP Semiconductors RF Manual 14th edition
(12)
(10)
(4)
1
0.1
5th generation
4th generation
(23)
(16)
(18)
68
(41)
5
10
1st generation
20
50
4
1
100
200
500
IC (mA)
3
3
2
2
Figure 1
1000
4
1
Figure 2
Wideband transistors (RF small signal)
GUM (typ)
(dB)
400
400
400
2000
2100
2000
2000
NPN
NPN
NPN
NPN
NPN
NPN
NPN
7
7
7
-
@ VCE = (V)
Polarity
250
250
250
500
250
250
500
@ IC = (mA)
P tot (max)
(mW)
8
8
10
10
8
10
9.5
SOT143
SOT143
SOT343
SOT223
SOT223H
SOT223
SOT223
@ f = (MHz)
IC (max)
(mA)
BFG10
BFG10/X
BFG10W/X
BLT50
BLT70
BLT80
BLT81
VCEO (max)
(V)
Type
Package
RF power transistors for handheld equipment
1900
1900
1900
-
1
1
1
-
3.6
3.6
3.6
-
@ IC = (mA)
@ VCE = (V)
1
1
-
-
1000
0.5
1
1.8
0.5
1
2
0.5
1
2
-70 -10
100 10
15 10
2
70 10
- 3.75
50 10 3.3
30
6
3.5
15 10
3
15 10
2
14 10 2.5
0.5
1
1.8
0.5
1
1.8
2.5
-15 -10 2.5
2.4
-30 -5 2.4
1000
1000
1000
1000
500
500
800
2000
1000
800
1000
1000
500
500
500
500
0.5
1
1
5
-50
50
30
5
5
2
1
0.5
-5
-5
-10
-10
1
1
1
10
-10
10
6
10
10
5
1
1
-10
-10
-5
-5
3
2.1
3
3
3
2000
1000
2000
1000
1000
5
5
5
-5
-10
10
10
10
-10
-5
800
800
2000
2000
2000
2000
2000
2000
2000
1000
2000
2000
2000
2000
2000
2000
2000
100
50
80
80
70
15
15
30
30
45
70
15
30
30
30
30
30
1000
1000
1000
1000
500
1000
1000
1000
1000
1000
1000
15
15
5
5
45
5
5
5
5
5
5
8
8
8
8
10
8
8
8
8
8
8
2.5
2.5
2.3
2.3
3
2.7
3
3
3
2.1
2.1
2000
2000
2000
2000
1000
2000
2000
2000
2000
2000
2000
5
5
5
5
45
15
5
5
5
5
5
8
8
8
8
10
8
8
8
8
8
8
SOT23
SOT323
SOT23
1
1.6
2.3
15
15
5
25 300 NPN
50 300 NPN
6.5 30 NPN
BFG25A/X
BFG25AW
BFG25AW/X
BFG31
BFG35
BFG92A/X
BFG97
BFQ149
BFQ18A
BFQ19
BFR106
BFR92A
BFR92AW
BFS17A
BFS25A
BFT25A
BFT92
BFT92W
BFT93
BFT93W
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
2nd
18
18
18
10
11
7
10
10
11
10
10
7
7
4
18
18
7
7
9
9
SOT143B
5
SOT343N 5
SOT343N 5
SOT223
5
SOT223
4
SOT143B
5
SOT223
5.5
SOT89
5
SOT89
4
SOT89
5.5
SOT23
5
SOT23
5
SOT323
5
SOT23
2.8
SOT323
5
SOT23
5
SOT23
5
SOT323
4
SOT23
5
SOT323
4
5
5
5
-15
18
15
15
-15
18
15
15
15
15
15
5
5
-15
-15
-12
-12
6.5
6.5
6.5
-100
150
25
100
-100
150
100
100
25
25
25
6.5
6.5
-25
-35
-35
-50
32
500
500
1000
1000
400
1000
1000
1000
1000
500
300
300
300
32
32
300
300
300
300
NPN
NPN
NPN 16 1000 0.5
PNP 16 500 -70
NPN 15 500 100
NPN 16 1000 15
NPN 16 500 70
PNP 12 500 -50
NPN
NPN 11.5 500 50
NPN
NPN 14 1000 15
NPN 14 1000 15
NPN
NPN
NPN
PNP 18 500 -14
PNP 17 500 -15
PNP 16.5 500 -30
PNP 15.5 500 -30
18
16
1
8
-10 12
10 11
10 11
10 12
-10
10 7.5
- 11.5
10
8
10
8
- 13.5
13
15
-10
-10 11
-5
-5 10
1000
2000
2000
800
800
2000
800
800
800
2000
2000
800
1000
1000
1000
BFG135
BFG198
BFG590
BFG590/X
BFG591
BFG67
BFG67/X
BFG93A
BFG93A/X
BFG94
BFQ591
BFQ67W
BFR93A
BFR94A^
BFR93AR
BFR93AW
BFR94AW^
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
3rd
16
15
22
22
22
14
14
8
8
8
22
14
8
8
8
8
8
SOT223
SOT223
SOT143B
SOT143B
SOT223
SOT143B
SOT143B
SOT143B
SOT143B
SOT223
SOT89
SOT323
SOT23
SOT23
SOT23
SOT323
SOT323
15
10
15
15
15
10
10
12
12
12
15
10
12
12
12
12
12
150
100
200
200
200
50
50
35
35
60
200
50
35
35
35
35
35
1000
1000
400
400
2000
380
380
300
300
700
2250
300
300
300
300
300
300
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
10
8
4
4
12
8
8
8
8
12
8
8
8
8
8
8
7
8
5
5
7
8
8
6
6
6
7
8
6
6
6
5
5
Polarity
3
3
1
Type
1st
1st
1st
16
18
13
13
13
17
17
16
16
11
13
13
13
13
13
13
500
500
900
900
900
1000
1000
1000
1000
900
1000
1000
1000
1000
1000
1000
100
50
80
80
70
15
15
30
30
70
15
30
30
30
30
30
12
15
7.5
7.5
7.5
10
10
10
10
13.5
5.5
8
7
7
7
8
8
10
8
4
4
12
8
8
8
8
10
12
8
8
8
8
8
8
1.7
1.7
1.7
1.7
2.7
1.3
1.9
1.9
1.9
1.5
1.5
NF (typ) (dB)
-
BFS17
BFS17W
BFT25
NF (typ) (dB)
-
IC (max) (mA)
5
5
1
VCEO (max) (V)
2
2
1
f T (typ) (GHz)
500
500
500
Package
4.5
4.5
3.8
Curve
@ VCE = (V)
@ f = (MHz)
800
@ IC = (mA)
GUM (typ) (dB)
12
@ f = (MHz)
@ VCE = (V)
1
@ VCE = (V)
@ IC = (mA)
1
@ IC = (mA)
@ f = (MHz)
500
@ f = (MHz)
GUM (typ) (dB)
18
Gemeration
P tot (max) (mW)
RF wideband transistors generation 1 - 3
Bold= Highly recommended product
Bold Red = New, highly recommended product
^ = automotive qualified
NXP Semiconductors RF Manual 14th edition
69
@ IC = (mA)
IP3 (typ) (dBm)
@ IC = (mA)
@ VCE = (V)
3
3
3
3
@ IC = (mA)
@ VCE = (V)
@ f = (MHz)
5
5
15
15
@ VCE = (V)
PL(1dB) (typ) (dBmW)
8.5
8.5
19.4
19.4
@ VCE = (V)
60
60
210
210
@ IC = (mA)
10
10
35
35
@ f = (MHz)
6
6
6
6
14
14
14
14
13
13
12
12
12
13
13
13
11
11
11
11
11
10
10
10
9
10
9
8
10
10
9
9
7
10
9
8
9.5
8
10
10
9.2
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
20
15
5
5
20
20
40
5
20
40
15
30
15
15
30
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
6
6
6
6
8
6
6
8
6
6
6
6
6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.1
1.2
1.9
1.7
1.2
1.2
1.1
1.1
1.3
1.2
1.1
1.3
1.4
1.3
1.5
1.5
1.3
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
1000
900
900
900
900
900
900
900
900
1000
1000
1000
1000
1000
5
5
5
5
5
20
20
20
5
5
10
10
10
10
10
10
10
1
5
40
15
5
1.25
5
5
10
1.25
5
10
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
8
6
6
6
6
8
6
6
8
6
6
6
6
6
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.85
1.85
2.1
2.1
2.1
2.1
2.1
2.1
2.1
1.9
1.9
2.7
1.9
1.9
1.9
1.9
2.1
1.9
1.9
2.1
2
2
2.1
2.1
1.8
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
1.25
1.25
1.25
1.25
1.25
5
5
5
5
5
10
10
10
10
10
10
10
5
5
15
5
1.25
5
5
10
1.25
5
10
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
6
6
6
6
8
6
6
8
6
6
6
6
6
4
4
4
4
4
17
17
17
17
17
21
21
21
21
21
21
21
4
5
17
17
21
4
17
21
-
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
6
6
6
6
8
6
6
8
-
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
900
-
NPN 18
NPN 18
NPN 18.3
NPN 18.3
1800
1800
1800
1800
5
5
15
15
3
3
3
3
-
-
-
-
1
1
1.1
1.1
2000
2000
2000
2000
1
1
3
3
3
3
3
3
1.8
1.8
8.7
8.7
3
3
3
3
1800 5
1800 5
1800 15
1800 15
NF (typ) (dB)
SOT143R
SOT343R
SOT143R
SOT343R
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
6
6
6
6
8
6
6
8
-
@ VCE = (V)
30
30
31
31
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
5
20
20
40
5
20
40
-
@ IC = (mA)
4.5
4.5
4.5
4.5
10
10
10
10
10
26
26
26
26
26
34
34
34
34
34
34
34
10
10
26
26
34
10
26
34
-
@ f = (MHz)
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
5
5
5
5
5
20
20
20
20
20
40
40
40
40
40
40
40
5
5
20
20
40
5
20
40
-
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NF (typ) (dB)
150
150
500
500
500
300
300
300
500
500
400
400
400
500
500
500
650
500
1000
1,200
300
150
150
300
150
500
150
300
500
360
365
250
150
270
@ VCE = (V)
18
18
18
18
18
70
70
70
70
70
120
120
120
120
120
120
120
18
70
120
50
18
18
70
70
120
18
70
120
50
100
50
50
100
@ IC = (mA)
P tot (max) (mW)
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
8
8
15
10
15
15
15
15
15
15
15
15
10
10
10
10
10
@ f = (MHz)
IC (max) (mA)
SOT143B 9
SOT143B 9
SOT343N 9
SOT343N 9
SOT343R 9
SOT143B 9
SOT143B 9
SOT143R 9
SOT343N 9
SOT343N 9
SOT143B 9
SOT143B 9
SOT143R 9
SOT343N 9
SOT343N 9
SOT343R 9
SOT223
9
SOT363A 9
SOT363A 9
SOT89
9
SOT23
8
SOT23
9
SOT416
9
SOT23
9
SOT416
9
SOT23
9
SOT323
9
SOT323
9
SOT323
9
SOT23
8
SOT23
8
SOT323
8.5
SOT416
9
SOT323
8.5
GUM (typ) (dB)
VCEO (max) (V)
19
19
19
19
19
20
20
20
20
20
21
21
21
21
21
21
21
19
20
21
14
19
19
20
20
21
19
20
21
20
21
20
20
21
Polarity
Curve
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
f T (typ) (GHz)
Gemeration
BFG505
BFG505/X
BFG505W
BFG505W/X
BFG505W/XR
BFG520
BFG520/X
BFG520/XR
BFG520W
BFG520W/X
BFG540
BFG540/X
BFG540/XR
BFG540W
BFG540W/X
BFG540W/XR
BFG541
BFM505
BFM520
BFQ540
BFQ67
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFS505
BFS520
BFS540
PBR941
PBR951
PRF947
PRF949
PRF957
Package
Type
RF wideband transistors generation 4 - 4.5
1
1
2
2
2
8
2
2
2
2
2
2
1.6
1.2
1.2
1.2
1.2
1.8
2000
2000
2000
2000
2000
2000
1
1
2
2
2
8
2
2
2
2
2
2
5
1
5
2
12 2
12 2
12 2
20 3.6
900
1
6
1
2000 10 15 10
2000 25 22 25
2000 25 22 25
2000 25 22 25
2000 1 28 80
1
2
2
2
2
2
5800
2400
1500
1500
12000
5800
5800
2400
2400
8
25
60
90
8
25
25
60
90
2
2
2
2
2
2
2
2
2
0.75
0.58
0.6
0.7
0.9
0.47
0.56
0.5
0.56
2400
1500
1500
1500
5800
2400
2400
1500
1500
1
5
20
50
2
5
5
20
50
2
2
2
2
2
2
2
2
2
1.4 5800 1
0.73 2400 5
0.75 2400 20
0.9 2400 50
1.7 12000 2
0.7 5800 5
1
5800 5
0.6 2400 20
0.7 2400 50
2
2
2
2
2
2
2
2
2
8
-
- 14 8
- 23 25
- 30 60
- 35 90
- 14.5 8
5800 25 19 25
- 20.5 25
- 23 60
- 24 90
5
5
5
5
2
2
2
2
2
NXP Semiconductors RF Manual 14th edition
2
-
IP3 (typ) (dBm)
900
900
900
900
900
900
@ IC = (mA)
1
0.9
0.8
0.8
0.8
1.2
@ f = (MHz)
3.6
2
2
2
2
2
2
@ VCE = (V)
1
3
10
25
25
25
80
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold = Highly recommended product
Bold Red = New, highly recommended product
70
PL(1dB) (typ) (dBmW)
@ VCE = (V)
1900
2000
2000
2000
2000
2000
2000
NF (typ) (dB)
10
22
21
23
22
20
16
NF (typ) (dB)
@ IC = (mA)
NPN 21
NPN 28
NPN 28.5
NPN 25.6
NPN 16.5
NPN 18
NPN 20.3
NPN 25
NPN 20.4
@ f = (MHz)
50
130
200
300
30
136
130
200
250
@ VCE = (V)
5
10
5
30
5
70
5 100
2.8 10
2.8 40
2.8 30
2.8 70
2.8 100
@ IC = (mA)
40
40
40
40
70
70
70
70
70
@ f = (MHz)
NPN
NPN
NPN
NPN
NPN
NPN
NPN
@ VCE = (V)
600
16
54
135
135
135
360
@ IC = (mA)
4.5 500
4.5 3.6
4.5 12
4.5 30
4.5 30
4.5 30
4.5 250
@ f = (MHz)
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
SOT343F
17
22
25
25
25
21
GUM (typ) (dB)
34
35
36
37
38
33
39
40
41
Polarity
6th
6th
6th
6th
7th
7th
7th
7th
7th
P tot (max) (mW)
BFU610F*
BFU630F*
BFU660F*
BFU690F*
BFU710F*
BFU725F/N1
BFU730F*
BFU760F*
BFU790F*
SOT343R
SOT343R
SOT343R
SOT343F
SOT343R
SOT343R
SOT343R
IC (max) (mA)
32
25
26
27
27
27
29
VCEO (max) (V)
Curve
5th
5th
5th
5th
5th
5th
5th
f T (typ) (GHz)
Gemeration
BFG21W
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
Package
Type
RF wideband transistors generation 5 - 7
3.4
RF ICs
3.4.1 MMICs
NEW : RF MMIC selection guide on www.nxp.com/mmics Easy-to-use
parametric filters help you to choose the right zRF MMIC for your design.
Why choose NXP Semiconductors’ MMICs
`` Reduced RF component count
`` Easy circuit design-in
`` Reduced board size
`` Short time-to-market
`` Broad portfolio
`` Volume delivery
`` Short leadtimes
`` Excellent gain flatness^
`` No output inductor necessary anymore^
^ = only for new satellite IF gain blocks, BGA28xx-family.
General-purpose wideband amplifiers (50 Ohm gain blocks)
@
Type
Package
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGA2712
BGM1011
BGM1012
BGM1013
BGM1014
BGA2714
BGA2715
BGA2716
BGA2717
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Notes:
(1)
Vs
(V)
5
3
3
5
5
5
5
3
5
5
3
5
5
5
Fu(1)
Is
@-3 dB
(mA) (GHz)
12.6
3.6(2)
5.7
1.9
33.3
2.4
24.4
2.8
23.5
3.6
12.3
3.2
25.5
3.6
14.6(2)
27.5
2.1
2.5
21.0 (2)
4.58
2.7
3.3
4.3(2)
3.2
15.9(2)
8.0
3.2
Upper -3 dB point, to gain at 1 GHz.
(2)
NF
(dB)
4.8
1.9(2)
4.5
4.9
4.0
3.9
4.7
4.8
4.6
4.2
2.2
2.6
5.3
2.3(2)
Psat
(dBm)
2.8
-2.3
13.2(2)
10.5
12.5
4.8
13.8
9.7
14.0
12.9
-3.4
-4.0
11.6
1.4
@ 1 GHz
Gain(3)
(dB)
13.1
21.8
21.4
23.2(2)
22.7
21.3
30 (2)
20.1
35.5(2)
32.3
20.4
21.7
22.9
23.9
Optimized parameter
(3)
P1dB
OIP3
(dBm) (dBm)
-0.7
8.3
-9.2
-1.9
12.1
21.9
7.2
18.6
8.3
22
0.2
11
12.2
23
5.6
18
12.0
22.7
11.2
20.5
-7.9
2.1
-8.0
2.3
8.9
22.2
-2.6
10.0
100
MHz
13.0
14.8
20.3
22.4
22.2
20.8
25.0
19.5
35.2
30.0
20.8
13.3
22.1
18.6
Gain(3) (dB) @
2.2
2.6
GHz
GHz
14.1
13.8
17.6
15.0
20.4
17.9
23.2
21.8
23.0
22.1
21.9
21.2
37.0
32.0
20.4
19.9
31.8
29.7
34.1
30.5
20.8
19.4
23.3
22.1
22.8
22.1
25.1
24.0
3.0
GHz
12.7
11.9
15.5
19.3
21.1
19.3
28.0
18.7
26.1
26.4
16.8
20.1
20.8
22.1
Vs
(V)
6
4
4
6
6
6
6
4
6
6
4
6
6
6
Limits
Is
(mA)
20
15
50
34
35
25
35
50
35
30
10
8
25
15
P tot
(mW)
200
200
200
200
200
200
200
200
200
200
200
200
200
200
Vs
(V)
3.3
Limits
Is
(mA)
77
P tot
(mW)
200
Gain = |S21|2
New general-purpose wideband amplifiers (50 Ohm gain blocks)
@
Type
Package
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Vs
(V)
3.3
3.3
3.3
3.3
5.0
5.0
5.0
Fu
Is
@-3 dB
(mA) (GHz)
9.7
>3
12.4
3.0
16.4
>3
19.6
2.3
7.7
>3
22.7
2.6
15.4
>3
NF
(dB)
3.4
3.6
3.4
2.8
3.9
3.7
3.6
@ 1 GHz
Gain
(dB)
20.2
22.1
25.4
31.2
23.3
31.9
23.4
OIP3
(dBm)
11.5
13.6
18.2
16.1
8.7
20.9
17.7
250
(MHz)
20.0
22.3
26.2
32.0
22.9
31.2
23.0
Gain (dB) @
950
1550
(MHz) (MHz)
20.2
20.6
22.1
23.0
25.4
25.5
31.2
30.6
23.2
23.9
31.8
32.6
23.3
24.0
2150
(MHz)
20.6
23.8
25.8
28.7
24.0
31.4
24.3
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
Bold Red = New, highly recommended product
2-stage variable gain linear amplifier
@
Type
BGA2031/1
Notes:
Vs
(V)
3
Package
(1)
SOT363
Gain = GP, power gain.
(2)
Is
(mA)
51
Frequency
Range
800-2500
Gain(1)
(dB)
24
@ 900 MHz
DG(2)
P1dB ACPR Gain(1)
(dB) (dBm) (dBc)
(dB)
62
11
49
23
@1900 MHz
DG(2)
P1dB ACPR
(dB) (dBm) (dBc)
56
13
49
DG = Gain control range
NXP Semiconductors RF Manual 14th edition
71
Wideband linear mixer
@
Type
BGA2022
Notes:
Vs
(V)
3
Package
(1)
SOT363
Gain = GP, power gain.
(2)
RF Input
Frequency
Range
800 - 2500
Is
(mA)
6
IF Output
Frequency
Range
50 - 500
NF
(dB)
9
@ 880 MHz
Gain(1) OIP3
(dB) (dBm)
5
4
@1900 MHz
NF Gain(1) OIP3
(dB)
(dB) (dBm)
9
6
10
Vs
(V)
4
Limits
Is
(mA)
10
Ptot
(mW)
40
Vs
(V)
4.5
4.5
4.5
4.5
4.5
Limits
Is
(mA)
30
30
30
30
15
Ptot
(mW)
135
135
135
135
70
DG = Gain control range
Low-noise wideband amplifiers
@
Type
Package
BGA2001
BGA2002^
BGA2003
BGA2011
BGA2012
SOT343R
SOT343R
SOT343R
SOT363
SOT363
Vs
(V)
2.5
2.5
2.5
3
3
Notes: (1) MSG (2) Adjustable bias
^ = Automotive qualified
Is
(mA)
4
4
10 (2)
15
7
(3)
NF
(dB)
1.3
1.3
1.8
1.5
-
@ 900 MHz
Gain
IIP3
(dB) (dBm)
-7.4
22(1)
-7.4
22(1)
24 (1)
-6.5
10
19(3)
-
@1800 MHz
NF
Gain
IIP3
(dB)
(dB) (dBm)
1.3
19.5(1)
-4.5
1.3
19.5(1)
-4.5
1.8
16(1)
-4.8
1.7
16(3)
10
Gain(3) (dB) @
1
2.6
GHz
GHz
17.1
11.6
17.1
11.6
18.6
11.1
14.8
8
18.2
11.6
100
MHz
20
20
26
24
22
3.0
GHz
10.7
10.7
10.1
6.5
10.5
|S21|2
General-purpose, med. power ampl. (50 ohm gain blocks)
@
Type
BGA6289
BGA6489
BGA6589
Notes:
(1)
@ 900 MHz
Gain(2) OIP3
Package
Vs (1)
Is
NF
SOT89
SOT89
SOT89
(V)
4.1
5.1
4.8
(mA)
84
78
81
(dB)
3.5
3.1
3.0
Device voltage without bias resistor.
(2)
(dB)
15
20
22
(dBm)
31
33
33
P1dB
NF
(dBm)
17
20
21
(dB)
3.7
3.3
3.3
@1800 MHz
Gain(2) OIP3
(dB)
13
16
17
(dBm)
28
30
32
P1 dB
Gain(2)
2.5
Vs (1)
Limits
Is
Ptot
(dBm)
15
17
20
GHz
12
15
15
(V)
6
6
6
(mA)
120
120
120
(mW)
480
480
480
Gain = |S21|2
Medium power amplifier MMICs for all 400 - 2700 MHz applications
supply
Type
Vcc
f
Package
shutdown control
Icc
VI(D)L(SHDN)
VI(D)H(SHDN)
II(D)L(SHDN)
Typ
Typ Max Min Max Min Max
Typ
(MHz)
(V) (mA) (mA) (V)
(V)
(V)
(V)
(µA)
BGA7124
SOT908
leadless 400 - 2700
5
130
200
0
0.7
2.5 Vbias
4
BGA7024
SOT89
leaded 400 - 2700
5
110
BGA7127
SOT908
leadless 400 - 2700
5
180
325
0
0.7
2.5 Vbias
4
BGA7027
SOT89
leaded 400 - 2700
5
170
BGA7130*
SOT908
leadless 400 - 2700
5
0
0.7
2.5 Vbias
4
BGA7133*
SOT908
leadless 400 - 2700
5
0
0.7
2.5 Vbias
4
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.
RF performance
RF performance
Typ @ f = 940 MHz
Typ @ f = 1960 MHz
PL(1dB) OIP3
dBm dBm
25
38
24
38
28
44
28
41
30
45
33
46
Gp
dB
22
22
20
19
18
18
NF
dB
5
3
3
3
4
4
Gp
dB
16
16
13
12
12
12
PL(1dB) OIP3
dBm dBm
24
38
25
38
28
43
28
43
30
45
33
47
NF
dB
5
4
5
4
4
4
SiGe:C MMICs (for e.g. GPS):
@ 1.575 GHz
Supply
voltage
Type
Package
BGU7003
BGU7005
BGU7006*
BGU7007*
SOT891
SOT886
WLCSP***
SOT886
Supply current
Insertion
power gain
Noise
figure
Input power at 1 dB gain
compression
Vcc
Icc
|s21|2
NF
PI(1 dB)
IP3i
V
mA
dB
dB
dBm
dBm
Min
Max
Min
Typ
Max
Min
Typ
Max
Typ
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
2.2
1.5
1.5
1.5
2.85
2.85
2.85
2.85
3
-
4.5
3.8
4.8
15
-
16
-
18,3
16.5**
16.5**
18****
20
-
0,8
0,9
0,9
0,9
-14
-14
-14
-11
-11
-11
-20
-
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc =
Vcc =
2.85 V, 2.85 V,
Typ
Min
-11
-12
-11
Vcc =
1.8 V,
Min
Vcc =
1.8 V,
Typ
Vcc =
2.5 V,
Icc =
5 mA
Vcc =
2.85 V,
Min
Vcc =
2.85
V,
Typ
5
1
5
9
4
9
0
-
5
5
5
12
9
12
-8
-9
-8
SiGe:C MMICs for Set-Top-Boxes
Type
Package
Frequency
range
@
Mode
(MHz)
BGU7033*
SOT363
40 - 1000
BGU7032*
SOT363
40 - 1000
BGU7031*
SOT363
40 - 1000
GP 10 dB
GP 5 dB
Bypass
GP 10 dB
Bypass
GP 10 dB
Gain (1)
NF
PL(1dB)
OIP3
FL (2)
RLout
RLin
(mA)
(dB)
(dB)
(dBm)
(dBm)
(dB)
(dB)
(dB)
43
43
4
43
4
43
10
5
-2
10
-2
10
4.5
6
2.5
4.5
2.5
4.5
14
9
10
13
10
13
29
29
29
29
29
29
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
12
12
8
12
8
12
18
17
8
18
8
18
VCC
ICC
(V)
5
5
5
5
5
5
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
Notes: (1) Gain = GP, power gain, (2) Flatness of frequency response = FL
72
NXP Semiconductors RF Manual 14th edition
SiGe:C MMICs Variable Gain Amplifiers
Type
Package
Control interface
BGA7202*
SOT617
Analog
BGA7203*
BGA7204*
BGA7350*
BGA7351*
SOT617
SOT617
SOT617
SOT617
Analog
Parallel, serial
Parallel, digital
Parallel, digital
Vsup
Isup
frequency
(V)
(mA)
5
710
5
5
5
5
710
160
240
240
(MHz)
700 … 1450
1450 … 2200
2100 … 2750
700 … 2750
50 … 250
Gain @ minimum attenuation @ maximum attenuation
range
Gain
OIP3
NF
Gain
OIP3
NF
(dB)
(dB)
(dBm)
(dB)
(dB)
(dBm)
(dB)
27
24
45
6.5
-3
23.5
33.5
27
24
45
6.5
-3
23.5
33.5
27
24
45
6.5
-3
23.5
33.5
31.5
24
37
6.5
-7.5
19
38
24
18.5
6
-5.5
50
30
28
18.5
6
-9.5
50
34
BGA7350 and BGA7351 are dual VGA products. The VGA function is twice on the chip.
BGA7350 and BGA7351 are designed for receiving.
SiGe:C MMIC LNA's for wireless infrastructures
Type
Package
BGU7051*
BGU7052*
BGU7053*
BGU7054*
SOT650
SOT650
SOT650
SOT650
Vsupply (typ)
@ IC =
@f=
(V)
3.3
3.3
3.3
3.3
(mA)
65
65
65
65
(MHz)
900
1900
2500
3500
Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ)
(dB)
20.9
20.1
20
20
(dB)
0.7
0.9
1
1.1
(dBmW)
17.8
18
18
18
(dBm)
34
35.5
35
35
IRL
ORL
(dB)
22
20
20
20
(dB)
15.8
15
15
15
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
3.4.2 Low noise LO generators for VSAT and general microwave applications
Why choose NXP Semiconductors’ low noise LO generators
`` Lowest total cost of ownership
`` Alignment free concept
`` Easy circuit design-in
`` Improved LO stability
Low noise LO generators for VSAT applications
VCC
fIN(REF)
Type
TFF1003HN
TFF1007HN*
ICC
PLL phase noise @ N=64,
@100 kHz
Package
SOT616
SOT616
PLL
Output buffer
fo(RF)
Po
RLout(RF)
Input
Si
Typ
Typ
Max
Typ
Max
Min
MHz
V
mA
dBc/Hz
(GHz)
dBm
dB
dBm
50~815
3.3
100
-92
12.8~13.05
-5
-10
-10
230.46~234.38
3.3
100
-104
14.75~15
-3
-10
-10
Low noise LO generators for general microwave applications
Type
TFF11070HN*
TFF11073HN*
TFF11077HN*
TFF11080HN*
TFF11084HN*
TFF11088HN*
TFF11092HN*
TFF11096HN*
TFF11101HN*
TFF11105HN*
TFF11110HN*
TFF11115HN*
TFF11121HN*
TFF11126HN*
TFF11139HN*
TFF11145HN*
TFF11152HN*
Package
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
SOT616
fIN(REF)
VCC
ICC
MHz
27 - 448
28 - 468
29 - 490
31 - 513
32 - 537
34 - 562
35 - 588
37 - 616
38 - 644
40 - 674
42 - 706
44 - 738
46 - 773
48 - 809
53 - 886
55 - 927
58 - 970
Typ
V
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
Typ
mA
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
PLL phase noise @
N=64
@ 100 kHz @ 10 MHz
dBc/Hz
dBc/Hz
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
-95
-131
Min
GHz
6.84
7.16
7.49
7.84
8.21
8.59
8.99
9.41
9.85
10.31
10.79
11.29
11.81
12.36
13.54
14.17
14.83
PLL
fo(RF)
Typ
GHz
7.00
7.33
7.67
8.02
8.40
8.79
9.20
9.63
10.07
10.54
11.03
11.55
12.09
12.65
13.85
14.50
15.18
Max
GHz
7.16
7.49
7.84
8.21
8.59
8.99
9.41
9.85
10.31
10.79
11.29
11.81
12.36
12.94
14.17
14.83
15.52
Output buffer
Po
RLout(RF)
Typ
Max
dBm
dB
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
-5
-10
Input
Si
Min
dBm
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
NXP Semiconductors RF Manual 14th edition
73
3.5
RF MOS transistors
3.5.1 JFETs
NEW : JFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you to choose the right
junction field effect transistor for your design.
Why choose NXP Semiconductors’ JFETs
`` Reliable volume supplier
`` Short leadtimes
`` Broad portfolio
N-channel junction field-effect transistors for switching
Type
Package
BSR56
BSR57
BSR58
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
J108
J109
J110
J111
J112
J113
PMBF4391
PMBF4392
PMBF4393
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT54
SOT54
SOT54
SOT54
SOT54
SOT54
SOT23
SOT23
SOT23
VDS
IG
(V)
max
40
40
40
25
25
25
40
40
40
25
25
25
40
40
40
40
40
40
(mA)
max
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
50
20
100
8
80
80
40
10
20
5
2
80
40
10
20
5
2
50
150
25
75
5
30
-Vgsoff
(V)
min
max
4
10
2
6
0.8
4
3
10
2
6
0.5
4
3
10
1
5
0.5
3
3
10
2
6
0.5
4
3
10
1
5
0.5
3
4
10
2
5
0.5
3
CHARACTERISTICS
RDSON
C rs
(Ω)
(pF)
max
min
max
25
5
40
5
60
5
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
8
15
12
15
18
15
30
typ.3
50
typ.3
100
typ.3
30
3.5
60
3.5
100
3.5
t on
(ns)
typ
4
4
4
13
13
13
4
4
4
13
13
13
-
t off
(ns)
max
15
15
15
typ
6
6
6
35
35
35
6
6
6
35
35
35
-
max
25
50
100
20
35
50
P-channel junction field-effect transistors for switching
Type
Package
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
J174
J175
J176
J177
SOT23
SOT23
SOT23
SOT23
SOT54
SOT54
SOT54
SOT54
74
VDS
IG
(V)
max
30
30
30
30
30
30
30
30
(mA)
max
50
50
50
50
50
50
50
50
I DSS
(mA)
min
max
20
135
7
70
2
35
1.5
20
20
135
7
70
2
35
1.5
20
NXP Semiconductors RF Manual 14th edition
-Vgsoff
(V)
min
max
5
10
3
6
1
4
0.8
2.25
5
10
3
6
1
4
0.8
2.25
CHARACTERISTICS
RDSON
C rs
(Ω)
(pF)
max
min
max
85
typ.4
125
typ.4
250
typ.4
300
typ.4
85
typ.4
125
typ.4
250
typ.4
300
typ.4
t on
(ns)
typ
7
15
35
45
7
15
35
45
t off
(ns)
max
-
typ
15
30
35
45
15
30
35
45
max
-
N-channel junction field-effect transistors for general RF applications
Type
Package
VDS
IG
(V)
max
(mA)
max
I DSS
(mA)
min
max
CHARACTERISTICS
Vgsoff
|Yfs|
(V)
(mS)
min
max
min
max
DC, LF and HF amplifiers
BF245A
SOT54
30
10
2
6.5
<8
BF245B
SOT54
30
10
6
15
<8
BF245C
SOT54
30
10
12
25
<8
BF545A
SOT23
30
10
2
6.5
0.4
7.5
BF545B
SOT23
30
10
6
15
0.4
7.5
BF545C
SOT23
30
10
12
25
0.4
7.5
BF556A
SOT23
30
10
3
7
0.5
7.5
BF556B
SOT23
30
10
6
13
0.5
7.5
BF556C
SOT23
30
10
11
18
0.5
7.5
Pre-amplifiers for AM tuners in car radios
BF861A
SOT23
25
10
2
6.5
0.2
1.0
BF861B
SOT23
25
10
6
15
0.5
1.5
BF861C
SOT23
25
10
12
25
0.8
2
BF862
SOT23
20
10
10
25
0.3
2
RF stages FM portables, car radios, main radios & mixer stages
SOT23
20
10
0.7
3
typ. 0.8
BF510 (1)
SOT23
20
10
2.5
7
typ. 1.5
BF511(1)
SOT23
20
10
6
12
typ. 2.2
BF512(1)
SOT23
20
10
10
18
typ. 3
BF513 (1)
Low-level general purpose amplifiers
BFR30
SOT23
25
5
4
10
<5
BFR31
SOT23
25
5
1
5
<2.5
General-purpose amplifiers
BFT46
SOT23
25
5
0.2
1.5
<1.2
AM input stages UHF/VHF amplifiers
PMBFJ308
SOT23
25
50
12
60
1
6.5
PMBFJ309
SOT23
25
50
12
30
1
4
PMBFJ310
SOT23
25
50
24
60
2
6.5
PMBFJ620
SOT363
25
50
24
60
2
6.5
C rs
(pF)
min
max
3
3
3
3
3
3
4.5
4.5
4.5
6.5
6.5
6.5
6.5
6.5
6.5
-
Typ.=1.1
Typ.=1.1
Typ.=1.1
0.8
0.8
0.8
0.8
0.8
0.8
-
12
16
20
35
20
25
30
-
2.1
2.1
2.1
typ=1.9
2.7
2.7
2.7
-
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
1.5
1.5
-
>1
1.5
-
>10
>10
>10
10
1.3
1.3
1.3
1.3
2.5
2.5
2.5
2.5
2.5
4
6
7
1
1.5
4
4.5
Bold= Highly recommended product
Asymmetrical
(1)
NXP Semiconductors RF Manual 14th edition
75
3.5.2 MOSFETs
NEW : RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric
filters help you to choose the right RF MOSFET for your design.
Why choose NXP Semiconductors’ MOSFETs
`` Reference designs for TV tuning
`` Short leadtimes
`` Broad portfolio
`` Smallest packages
`` 2-in-1 FETs for tuner applications
`` Reliable volume supply
`` Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
VDS
Type
Package
BSS83
SOT143
Silicon RF Switches
BF1107
SOT23
SOT143B
BF11085)
SOT143R
BF1108R5)
BF1108W
SOT343
BF1108WR
SOT343R
BF1118
SOT143B
BF1118R
SOT143R
BF1118W
SOT343
BF1118WR
SOT343R
(V)
max
10
ID
(mA)
max
50
3
3
3
3
3
3
3
3
3
10
10
10
10
10
10
10
10
10
I DSS
(mA)
min
max
-
V(p)GS
(V)
min
max
2(1)
0.1(2)
-
100 (3)
100 (3)
100 (3)
100
100
100
100
100
100
CHARACTERISTICS
C rs
t on
(pF)
(ns)
min
max
typ
max
typ.0.6
1
RDSON
(Ω)
max
45
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
20
20
20
20
20
22
22
22
22
-
-
-
t off
(ns)
typ
-
max
5
|S21(on)|2
(dB)
max
-
-
-
2.5
3
3
3
3
3
3
3
3
-
|S21(off)|2
(dB)
min
-
MODE
30
30
30
30
30
30
30
30
30
depl.
depl.
depl.
depl
depl
depl
depl
depl
depl
enh.
Bold= Highly recommended product
Bold Red = New, highly recommended product
N-channel, dual-gate MOSFETs
Type
Package
With external bias
BF908
SOT143
BF908R
SOT143R
BF908WR
SOT343R
BF991
SOT143
BF992
SOT143
BF994S
SOT143
BF996S
SOT143
BF998
SOT143
BF998R
SOT143R
BF998WR
SOT343R
Fully internal bias
BF1105
SOT143
BF1105R
SOT143R
BF1105WR
SOT343R
BF1109
SOT143
BF1109R
SOT143R
BF1109WR
SOT343R
Partly internal bias
BF904A
SOT143
BF904AR
SOT143R
BF904AWR
SOT343R
BF909A
SOT143
BF909AR
SOT143R
BF909AWR
SOT343R
76
CHARACTERISTICS
|Yfs|
C is
C os
(mS)
(pF)
(pF)
min
max
typ
typ
VDS
ID
(V)
max
(mA)
max
12
12
12
20
20
20
20
12
12
12
40
40
40
20
40
30
30
30
30
30
3
3
3
4
4
4
2
2
2
27
27
27
25
20
20
18
18
18
-
-2
-2
-2
-2.5
-1.3
-2.5
-2.5
-2.0
-2.0
-2.5
36
36
36
10
20
15
15
21
21
22
50
50
50
-
3.1
3.1
3.1
2.1
4
2.5
2.3
2.1
2.1
2.1
7
7
7
11
11
11
30
30
30
30
30
30
8
8
8
8
8
8
16
16
16
16
16
16
0.3
0.3
0.3
0.3
0.3
0.3
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
25
25
25
24
24
24
-
7
7
7
7
7
7
30
30
30
40
40
40
8
8
8
12
12
12
13
13
13
20
20
20
0.3
0.3
0.3
0.3
0.3
0.3
1(6)
1(6)
1(6)
1(6)
1(6)
1(6)
22
22
22
36
36
36
30
30
30
50
50
50
I DSX
(mA)
min max
NXP Semiconductors RF Manual 14th edition
V(th)gs
(V)
min
max
(2)
(7)
(3)
(8)
(4)
(9)
(5)
(1)
F @ 800 MHz
(dB)
typ
VHF
UHF
1.7
1.7
1.7
1.1
2
1
0.8
1.05
1.05
1.05
1.5
1.5
1.5
1
1.2(7)
1(7)
1.8
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
2.2(9)
2.2(9)
2.2(9)
2.2(9)
2.2(9)
2.2(9)
1.2(8)
1.2(8)
1.2(8)
1.3 (8)
1.3 (8)
1.3 (8)
1.7
1.7
1.7
1.5
1.5
1.5
X
X
X
X
X
X
X
X
X
X
X
X
2.2
2.2
2.2
3.6
3.6
3.6
1.3
1.3
1.3
2.3
2.3
2.3
2
2
2
2
2
2
X
X
X
X
X
X
X
X
X
X
X
X
(6)
Asymmetrical VGS (th)
VGS(th) @ 200 MHz
ID C OSS
VSG C ig
Depletion FET
plus diode in one package
N-channel, dual-gate MOSFETs
Type
Package
Partly internal bias
BF1100
SOT143
BF1100R
SOT143R
BF1100WR
SOT343R
BF1101
SOT143
BF1101R
SOT143R
BF1101WR
SOT343R
SOT363
BF1102(R)(10)
BF1201
SOT143
BF1201R
SOT143R
BF1201WR
SOT343R
BF1202
SOT143
BF1202R
SOT143R
BF1202WR
SOT343R
SOT363
BF1203 (11)
SOT363
BF1204(10)
BF1205C (11)(12)(13) SOT363
BF1205(11)(12)(13)
SOT363
BF1206(11)
SOT363
BF1206F(11)
SOT666
BF1207(11)(13)(14)
SOT363
BF1208 (11)(12)(13)
SOT666
BF1208D(11)(12)(13) SOT666
BF1210 (11)(12)
SOT363
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF1214(10)
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
SOT363
BF1218 (11/12/13)
SOT363
VDS
ID
(V)
max
(mA)
max
min
max
V(th)gs
(V)
min
max
14
14
14
7
7
7
7
10
10
10
10
10
10
10
10
10
6
6
10
7
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
30
30
30
30
30
30
40
301)
301)
301)
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
8
8
8
8
8
8
12
11
11
11
8
8
8
11
8
8
14
9
8
8
14
9
3
3
13
9
14
9
14
10
14
9
11
11
11
8
8
8
13
14
10
13
13
13
16
16
16
20
19
19
19
16
16
16
19
16
16
24
17
16
16
23
17
6.5
6.5
23
19
24
17
24
20
24
17
19
19
19
16
16
16
23
24
20
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
I DSX
(mA)
1.2(6)
1.2(6)
1.2(6)
1(6)
1(6)
1(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2(6)
1.2
1.2(6)
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
1
1
1
1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
CHARACTERISTICS
|Yfs|
C is
(mS)
(pF)
min
max
typ
24
24
24
25
25
25
36
23
23
23
25
25
25
23
25
25
26
28
26
26
33
29
17
17
25
26
26
28
26
25
26
28
25
25
25
28
28
28
25
26
25
33
33
33
35
35
35
40
40
40
35
40
40
41
43
40
40
48
44
32
32
40
41
41
43
41
40
41
43
40
40
40
43
43
43
35
41
40
2.2
2.2
2.2
2.2
2.2
2.2
2.8 (9)
2.6
2.6
2.6
1.7
1.7
1.7
2.6
1.7
1.7
2.2
2
1.8
2.0
2.4
1.7
2.4
1.7
2.2
1.8
2.2
2
2.1
2.1
2.2
2
2.1
2.1
2.1
1.7
1.7
1.7
2.2
2.1
2.1
C os
(pF)
typ
F @ 800 MHz
(dB)
typ
VHF
UHF
1.4
1.4
1.4
1.2(8)
1.2(8)
1.2(8)
1.6(8)
0.9
0.9
0.9
0.85
0.85
0.85
0.9
0.85
0.85
0.9
0.85
0.75
0.85
1.1
0.85
1.1
0.85
0.9
0.8
0.9
0.85
0.8
0.85
0.9
0.85
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.8
0.85
2
2
2
1.7
1.7
1.7
2
1.9
1.9
1.9
1.1
1.1
1.1
1.9
1.1
1.1
1.4
1.4
1.2
1.4
1.6
1.4
1.1
1.0
1.4
1.4
1.4
1.4
1.1
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
1.4
1.1
1.4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Bold= Highly recommended product
Bold Red = New, highly recommended product
(1)
(3)
(4)
(5)
(7)
(8)
(2)
Asymmetrcal
VGS(th) I D
VSG Depletion FET plus diode in one package @200 MHz C OSS C ig
Two equal dual gate MOSFETs in one package
(11)
Two low noise gain amplifiers in one package
(12)
Transistor A: fully internal bias, transistor B: partly internal bias
(13)
Internal switching function
(14)
Transistor A: partly internal bias, transistor B: fully internal bias
(9)
(10)
N-channel, dual gate MOSFETs for Set-Top-Boxes
CHARACTERISTICS
Type
Package
BF1215 (1)(2)(3)
SOT363
BF1216(1)
SOT363
BF1217
SOT343
VDS
ID
(V)
max
6
6
6
6
6
(mA)
max
30
30
30
30
30
V(th)gs
IDSX
(mA)
max
19.5
23
19.5
23
23
(V)
min
0.3
0.3
0.3
0.3
0.3
max
1
1
1
1
1
|Yfs|
Cis
COS
(mS)
typ
27
27
27
27
27
(pF)
typ
2.5
2.5
2.5
2.5
2.5
(pF)
typ
0.8
0.8
0.8
0.8
0.8
F @ 800
MHz
(dB)
typ
1.9
1.9
1.9
1.9
1.9
X-Mod @ 40 dB
gain reduction
(dB)
typ
107
107
107
107
107
Two low noise gain amplifiers in one package
(2)
Transistor A: fully internal bias, transistor B: partly internal bias
(3)
Internal switching function
Bold Red = New, highly recommended product
(1)
NXP Semiconductors RF Manual 14th edition
77
3.6
RF Modules
NEW : CATV module selection guide on www.nxp.com/catv
Easy-to-use parametric filters help you to choose the right
CATV module for your design.
Why choose NXP Semiconductors’ RF Modules
`` Excellent linearity, stability and reliability
`` Rugged construction
`` Extremely low noise
`` High power gain
`` Low total cost of ownership
Both families will be extended in the following months to cover
all of the twospecific market segments.
CATV types for Chinese (C-types) and 1GHz GaAs HFET
line ups
New in our CATV Hybrid portfolio are two families of products.
The C types are specially designed for the Chinese market,
customized for two major governmental projects.
And the GaAs HFET 1 GHZ complete line up for high end
applications all around the world.
C types (China)
`` CATV push pulls, chapter 3.6.2: BGY588C, BGE788C,
CGY888C
`` CATV power doublers, chapter 3.6.3: BGD712C
`` CATV optical receivers, chapter 3.6.4: BGO807C
1GHz GaAs HFET very high end Hybrids
`` CATV push pulls, chapter 3.6.2 : CGY1047, CGY1041,
CGY1043
`` CATV power doublers, chapter 3.6.3: CGD1040Hi,
CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,
CGD1044H
3.6.1 CATV Reverse Hybrids
Frequency
range
5 -75 MHz
5 -120 MHz
5 -200 MHz
5-200 MHz
Type number
BGY68
BGY66B
BGY67
BGY67A
BGR269
Gain
(dB)
29.2 - 30.8
24.5 - 25.5
21.5 - 22.5
23.5 - 24.5
34.5 - 35.5
Slope
(dB)
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
0 - 0.6
FL
RL IN /RL OUT
CTB
XMOD
CSO
@ Ch
± 0.2
± 0.2
± 0.2
± 0.2
± 0.4
20/20
20/20
20/20
20/20
20/20
-68
-66
-67
-67
-57
-60
-54
-60
-59
-50
-70
4
14
22
22
28
FL
RL IN /RL OUT
CTB
XMOD
CSO
@ Ch
± 0.5
± 0.2
± 0.2
± 0.4
± 0.4
± 0.2
± 0.2
± 0.3
± 0.6
± 0.5
± 0.5
± 0.5
± 0.3
± 0.5
± 0.3
± 0.3
± 0.3
± 0.5
± 0.6
± 0.5
± 0.5
± 0.3
10/10
16/16
20/20
20/20
20/20
20/20
20/20
20/20
10/8
20/20
16/16
20/20
20/20
20/20
20/20
14/14
20/20
20/20
20/20
20/20
21/21
20/20
20/20
20/20
-45
-57
-59
-57
-57
-57
-55
-54
-43
-53
-49
-53
-50
-49
-61
-61
-55
-68
-60
-60
-60
-53
-62
-58
-60
-59
-60
-54
-56
-52
-54
-51
-61
-61
-61
-59
-60
-59
-54
-57
-62
-59
-54
-57
-62
-56
-52
-54
-53
-52
-53
-56
-52
-61
-61
-57
-66
-55
-60
-55
-56
77
77
77
77
77
77
85
85
110
110
110
110
110
110
49
129
129
49
129
112
49
49
49
150
@ Vo
(dBmV)
50
48
50
50
50
NF @ fmax
@ Vo
(dBmV)
44
44
44
44
44
44
44
44
44
44
44
44
44
44
44
59
59
44
40
44
44
44
44
44
NF @ fmax
3.5
5
5.5
5.5
5.2
I tot
(mA)
135
135
230
230
160
3.6.2 CATV Push-Pulls
Frequency
range
40 - 550 MHz
40 - 600 MHz
40 - 750 MHz
40 - 870 MHz
40 -1003 MHz
78
Type number
OM7650
BGY588C
BGY585A
BGY587
BGY587B
BGY588N
BGY685A
BGY687
OM7670
BGY785A
BGE788C
BGY787
BGE787B
BGE788
BGY883
BGE885
BGX885N
BGY885A
BGY887
CGY888C
BGY835C
BGY887B
BGY888
BGY1085A
Gain
(dB)
33.2 - 35.5
33.2 - 35.5
17.7 - 18.7
21.5 - 22.5
26.2 - 27.8
33.5 - 35.5
17.7 - 18.7
21 - 22
33.2 - 35.2
18 - 19
33.2 - 35.2
21 - 22
28.5 - 29.5
33.5 - 34.5
14.5 - 15.5
16.5 - 17.5
16.5 - 17.5
18 - 19
21 - 22
34.5 - 36.5
33.5 - 34.5
28.5 - 29.5
33.5 - 34.5
18 - 19
Slope
(dB)
0.2 - 2
0.2 - 1.7
0.5 - 2
0.2 - 1.5
0.5 - 2.5
0.5 - 1.5
0.5 - 2.2
0.8 - 2.2
1/4
0-2
0.3 - 2.3
0 - 1.5
0.2 - 2.2
0.5 - 2.5
0-2
0.2 - 1.2
0.2 - 1.4
0-2
0.2 - 2
0.5 - 2.5
0.5 - 2.5
0.5 - 2.5
0.5 - 2.5
0-2
NXP Semiconductors RF Manual 14th edition
8
8
8
7
6.5
6
8.5
6.5
8
7
8
6.5
7
7
8.5
8
8
8
6.5
4.0
7.0
6.5
7
7.5
I tot
(mA)
340
345
240
240
340
340
240
240
340
240
325
240
320
320
235
240
240
240
235
280
340
340
340
240
CATV Push-Pulls 1 GHz
Freq range
40-1003 MHz
40-1003 MHz
40-1003 MHz
40-1003 MHz
40-1003 MHz
Type
Gain
Slope
fl
RL IN /RL OUT
CTB
Xmod
CSO
@ Ch
@ Vout
NF
Itot
CGY1041*
CGY1043*
CGY1047
CGY1049*
CGY1032*
22
24
28
30
33
1.0 - 2.0 dB
1.0 - 2.0 dB
1.0 - 2.0 dB
1.5 - 2.5 dB
1.0 - 2.0 dB
±0.8
±0.8
±0.5
±0.8
±0.8
20/18 dB
20/18 dB
20/18 dB
20/18 dB
20/18 dB
-62 dBc
-62 dBc
-62 dBc
-62 dBc
-62 dBc
-58 dBc
-58 dBc
-58 dBc
-58 dBc
-58 dBc
-64 dBc
-64 dBc
-64 dBc
-64 dBc
-64 dBc
79NTSC+75digital
79NTSC+75digital
79NTSC+75digital
79NTSC+75digital
79NTSC+75digital
44 dBmV flat
44 dBmV flat
44 dBmV flat
44 dBmV flat
44 dBmV flat
5.5 dB
5.5 dB
4.5 dB
4.5 dB
4.5 dB
250 mA
250 mA
250 mA
250 mA
250 mA
3.6.3 CATV power doublers
Frequency
range
40 - 550 MHz
Type number
BGD502
BGD702
BGD702N
BGD712
40 -750 MHz
BGD712C
BGD704
BGD714
BGD885
BGD802
BGD812
BGD804
40 - 870 MHz
BGD814
BGD816L
CGD942C
CGD944C
CGD1040Hi
CGD1042Hi
CGD1044Hi
40 - 1003 MHz
CGD1046Hi*
CGD1042H
CGD1044H
^
Gain
(dB)
18 - 19
18 - 19
18 - 19
18.2 - 18.8
18.2 - 18.8
19.5 - 20.5
20 - 20.6
16.5 - 17.5
18 - 19
18.2 - 18.8
19.5 - 20.5
19.7 - 20.3
21.2 - 21.8
20.5 - 22.5
23 - 25
21
23
25
25
23
25
Slope
(dB)
0.2 - 2.2
0.2 - 2
0.2 - 2
0.5 - 1.5
0.5 - 1.5
0-2
0.5 - 1.5
0.2 - 1.6
0.2 - 2
0.4 - 1.4
0.2 - 2
0.4 - 1.4
0.5 - 1.5
1-2
1-2
1.5
1.5
1.5
0 - 2.0
0 - 1.5
0-1
FL
RL IN /RL OUT
CTB
XMOD
CSO
@ Ch
± 0.3
± 0.5
± 0.25
± 0.35
± 0.4
± 0.5
± 0.35
± 0.5
± 0.5
± 0.5
± 0.5
± 0.5
± 0.5
± 0.3
± 0.3
0.5
0.5
0.5
1
± 0.3
± 0.3
20/20
20/20
20/20
23/23
17/17
20/20
23/23
20/20
20/20
23/23
20/20
22/25
22/25
18/18
18/18
-20/-20
-20/-20
-20/-20
20/20
17.5/20
17.5/20
-65
-58
-58
-62
-62
-57
-61
-54
-58
-53
-57.5
-55
-66
-66
-65
-65
-65
-73
-70
-70
-68
-62
-62
-63
-61
-62
-59
-62
-61
-62
-58
-58
-58
-68
-68
-68
-74
-67
-67
-62
-58
-58
-63
-63
-56
-62
-56
-60
-54
-59
-56
-68
-68
-68
-68
-68
-68
-68
-68
77
110
110
112
112
110
112
129
129
132
129
132
129
132
132
79 channels
79 channels
79 channels
79NTSC+75^
79 + 75^
79 + 75^
@ Vo
(dBmV)
44
44
44
44
44
44
44
59
44
44
44
44
44
48
48
50
50
50
44
59
59
NF @ fmax
8
8.5
8.5
7
7
8.5
7
8
9
7.5
7.5
7.5
7.5
3.5
3.5
<6
<6
<6
5.0
5.0
5.0
Itot
(mA)
435
435
435
410
410
435
410
450
410
410
410
410
375
450
450
470
470
470
460
450
450
= digital channels
3.6.4 CATV optical receivers
Frequency
Type number
range
Forward Path Receiver
BGO807
BGO807/FC0
BGO807/SC0
BGO807C
BGO807CE
40 - 870 MHz
BGO807C/FC0
BGO807C/SC0
BGO827
BGO827/FC0
BGO827/SC0
S
(V/W)
Slope
(dB)
FL SL
RLout
(dB)
IMD3
IMD2
@fm
(MHz)
@Pi
(mW)
NF @ fmax
800
750
750
800
800
750
750
800
750
750
0-2
0-2
0-2
0-2
0-2
0-2
0-2
0-2
0-2
0-2
1
1
1
1
1
1
1
1
1
1
11
11
11
11
11
11
11
11
11
11
-71
-71
-71
-71
-71
-71
-71
-73
-73
-73
-55
-55
-55
-54
-53
-55
-55
-57
-57
-57
854.5
854.5
854.5
854.4
854.4
854.5
854.5
854.5
854.5
854.5
1
1
1
1
1
1
1
1
1
1
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
Conn.
FC
SC
FC
SC
FC
SC
Itot
(mA)
205
205
205
205
205
205
205
205
205
205
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
Bold
= Highly recommended product
NOTES: This table is for reference only.
For full data please refer to the latest datasheet.
For availability please check the NXP Sales office.
Description
Frequency range: minimum and maximum frequency in MHz at which data are characterized @Ch/@Vo. The number of channels
and the output voltage at which CTB, XMOD, CSO, IMD2 and IMD3 are characterized @fm. Measurement frequency is fm. Noise
Figure is in dB or Noise in pA/Sqrt(Hz). FL SL is Flatness straight line. S is Minimum responsivity of optical receivers.
NXP Semiconductors RF Manual 14th edition
79
3.7
RF power transistors
NEW : RF power transistor selection guide on www.nxp.com/rfpower
Easy-to-use parametric filters help you to choose the right RF
power transistor for your design.
3.7.1 Base Station transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview
Device naming conventions RF power base stations transistors
B L F 6 G
22 L S
-45 P R B N G
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
Why choose NXP Semiconductors‘ RF power transistors for base stations:
`B` Leading
6 and 7 of LDMOS)
L F 6 G technology
22 L S -45 P (generation
R B N G
gullwing-shaped leads
`` Highest (system) efficiency
specialty
option: current sense lead
`` Best ruggedness
enhanced ruggedness
push-pull device
`` Advanced Doherty
amplifier designs
P1dB power
option: earless package
`` Industry’s first
3.8
GHz resistivity
Doherty
option:
low thermal
operating frequency (in 100MHz; maximum)
`` Industry’s
firstLDMOS
fully integrated Doherty amplifier
G: standard
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
NXP offers complete line-ups of RF power transistors operation from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
3.7.1.1
Function
driver
driver
driver
driver
driver
final
final
final
final
final
80
0.7 - 1.0 GHz line-up
Type
BLF6G21-10G
BLM6G10-30
BLM6G10-30G
BLF6G10(S)-45
BLF6G10L(S)-40BRN
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF6G10(LS)-200RN
BLF6G10L(S)-260PRN
BLF6G07L(S)-260PBM
Package
SOT538A
SOT834-1
SOT822-1
SOT608
SOT1112A3/B3
SOT502
SOT502
SOT502
SOT539A3/B3
SOT1110A3/B3
NXP Semiconductors RF Manual 14th edition
frange
PL(AV)
ηD
Gp
MHz
W
%
dB
V
10 - 2200
700 - 1000
700 - 1000
700 - 1000
728 - 960
700 - 1000
700 - 1000
688 - 1000
728 - 960
728 - 810
0.7
2
2
1
2.5
26.5
32
40
40
60
15
11.5
11.5
7.8
15
28
27
28.5
27
31
18.5
29
29
22.5
15
21
22.5
20
27
21
28
28
28
28
23
28
32
28
22
28
@VDS
3.7.1.2
1.4 - 1.7 GHz line-up
Function
driver
final
3.7.1.3
Type
Package
BLF6G15L(S)-40BRN
BLF6G15L(S)-250PBRN
SOT1112A3/B3
SOT1110A3/B3
Type
Package
driver
driver
driver
BLF6G21-10G
BLF6G20-40
BLF6G20(S)-45
SOT538A
SOT608A
SOT608B
final
BLF6G20LS-75
SOT502
final
final
final
final
final
final
final
final
final
final
BLF6G20(LS)-110
BLF6G20LS-140
BLF6G20-180PN
BLF6G20(LS)-180RN
BLF6G20-230PRN
BLF7G20L(S)-140P
BLF7G20L(S)-90P
BLF7G20L(S)-300P
BLF7G20L(S)-200
BLF7G20L(S)-250P
driver
driver
driver
driver
driver
final
final
final
final
final
SOT502
SOT502B
SOT539A
SOT502B
SOT539A
SOT1121B3
SOT1121A3/B3
SOT539A3/B3
SOT502A3/B3
SOT539A3/B3
Type
driver
driver
driver
driver
driver
final
final
final
final
final
final
final
integrated Doherty
integrated Doherty
Function
ηD
Gp
W
%
dB
V
1475-1511
1475-1511
2,5
60
13
32.5
22
18
28
28
frange
PL(AV)
ηD
Gp
@VDS
@VDS
MHz
W
%
dB
V
10 - 2200
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
1800 - 2000
1805 - 1880
1805 - 1880
1805 - 1880
1805 - 1880
1805 - 1880
0.7
2.5
2.5
29.5
63
25
35.5
50
40
65
20
84
85
50
70
15
15
14
37.5
52
32
30
29.5
27
32
31
56
30
30
30
18.5
18.8
19.2
19
19
19
16.5
18
17.2
17.5
17.5
19
17
17
17
28
28
28
28
28
28
28
32
30
28
28
28
28
28
28
2.0 - 2.2 GHz line-up
Function
3.7.1.5
PL(AV)
1.8 - 2.0 GHz line-up
Function
3.7.1.4
frange
MHz
BLF6G21-10G
BLM6G22-30
BLM6G22-30G
BLF6G22(S)-45
BLF6G22L(S)-40BN
BLF6G22LS-75
BLF6G22LS-100
BLF6G22L(S)-130
BLF7G22LS-130
BLF6G22-180PN
BLF6G22(LS)-180RN
BLF7G22L(S)-250PB
BLD6G21L(S)-50
BLD6G22L(S)-50
Package
SOT538A
SOT834-1
SOT882-1
SOT608
SOT1112A3/B3
SOT502B
SOT502B
SOT502
SOT502B
SOT539A
SOT502
SOT1110A3/B3
SOT1130
SOT1130
frange
PL(AV)
ηD
Gp
MHz
W
%
dB
V
10 - 2200
2100 - 2200
2100 - 2200
2000 - 2200
2110 - 2170
2000 - 2200
2000 - 2200
2000 - 2200
2000 - 2200
2000 - 2200
2000 - 2200
2110 - 2171
2010 - 2025
2110 - 2170
0.7
2
2
2.5
2.5
17
25
30
30
50
40
70
8
8
15
9
9
13
16
30.5
29
28.5
32
27.5
25
>17
42
38
18.5
29.5
29.5
18.5
19
18.7
18.5
17
18.5
17.5
16
30
13.5
13.3
28
28
28
28
28
28
28
28
28
32
30
28
28
28
@VDS
@VDS
2.3- 2.7 GHz line-up
Type
BLF6G27-10(G)
BLF6G27(S)-45
BLF6G27(LS)-75
BLF7G27L(S)-75P
BLF7G27L(S)-50BN
BLF6G27(LS)-135
BLF7G27L(S)-100
BLF7G24L(S)-100(G)
BLF7G27L(S)-140
BLF7G27L(S)-200P
Package
SOT975
SOT608
SOT502
SOT1121A3/B3
SOT1112A3/B3
SOT502
SOT502A3/B3
SOT 502 A
SOT502A3/B3
SOT539
frange
PL(AV)
ηD
Gp
MHz
W
%
dB
V
2500 - 2700
2500 - 2700
2500 - 2700
2300 - 2400
2500 - 2700
2500 - 2700
2500 - 2700
2300 - 2400
2500 - 2700
2500 - 2700
2
7
9
10
3
20
14
14
20
20
20
24
23
26
15
22.5
24
24
22
25
19
18
17
17
17
16
17.5
18
17
16.5
28
28
28
28
28
32
28
28
28
28
NXP Semiconductors RF Manual 14th edition
81
3.7.1.6
3.5 - 3.8 GHZ line-up
Function
Type
driver
driver
driver
final
3.7.1.7
BLF6G38-10(G)
BLF6G38(S)-25
BLF6G38(LS)-50
BLF6G38(LS)-100
SOT975
SOT608
SOT502
SOT502
frange
PL(AV)
ηD
Gp
MHz
W
%
dB
V
3400 – 3600
3400 – 3800
3400 – 3800
3400 – 3600
2
4.5
9
18.5
20
24
23
21.5
14
15
14
13
28
28
28
28
@VDS
Power LDMOS Doherty designs
Freq band (MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
728-821 MHz
790-821
54.5
790-821
55.5
790-821
57.2
728-768
58
869-960 MHz
869-894
52
869-894
52.7
869-894
53
920-960
53
920-960
56.2
869-894
58
925-960
58.3
925-960
58.9
869-894
58
1476-1511 MHz
1476-1511
58
1476-1511
58.1
1805-1880 MHz (DCS)
1805-1880
52
1805-1880
52.5
1805-1880
55
1805-1880
55
1805-1880
55.5
1805-1880
57.5
1805-1880
57.9
1805-1880
58.2
1930-1990 MHz (PCS)
1930-1990
53
1930-1990
55.2
1930-1990
56
1930-1990
56
1930-1990
57.5
1930-1990
58
1930-1990
58.2
1880-2025 MHz (TD-SCDMA)
2010-2025
47
1880-2025
50
2010-2025
50
1880 - 1920
52.5
2110-2170 MHz (UMTS / LTE)
2110-2170
47
2110-2170
54.7
2110-2170
54.9
2110-2170
55
2110-2170
55.5
2110-2170
56
2110-2170
56.5
2110-2170
57
2110-2170
58
2110-2170
58.5
2110-2170
59
2110-2170
55
2300-2400 MHz (WiBRO / LTE)
2300-2400
49.5
2300-2400
52
2300-2400
52.5
2500-2700 MHz (WiMAX / LTE)
2570-2620
49.5
2500-2700
50
2500-2600
52
2600-2700
52
2600-2700
52
2500-2700
52.5
2300-2400
52.5
2500-2700
55
2500-2700
56.5
3300-3800 MHz (WiMAX)
3400-3600
49.5
3400-3600
51
3400-3600
52.5
82
Package
VDS
(V)
Gain
(dB)
Drain Eff.
(%)
Type
Main transistor
Peak transistor
47.5
47
49.5
50
28
28
32
32
20
19
19
19
50
42
42
47
SYM
SYM
SYM
SYM
1/2 BLF7G10-300P
1/2 BLF6G10-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
1/2 BLF7G10-300P
1/2 BLF6G10-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
44
44.5
45
45
48
50
50
50
tbd
28
28
28
25
28
32
32
32
28
20
15
tbd
tbd
18.5
20.5
21
22
tbd
48
50
tbd
tbd
40
46
39
44
tbd
SYM
3-WAY
SYM
SYM
SYM
SYM
SYM / MMPP
SYM / MMPP
ASYM
BLF6G10S-45
BLF6G10S-45
1/2 BLF7G10LS-160P
1/2 BLF7G10LS-160P
BLF6G10-135RN
BLF6G10-200RN
1/2 BLF6G10-260PRN
1/2 BLF6G10-260PRN
BLF6G10-200RN
BLF6G10S-45
2x BLF6G10S-45
1/2 BLF7G10LS-160P
1/2 BLF7G10LS-160P
BLF6G10-135RN
BLF6G10-200RN
1/2 BLF6G10-260PRN
1/2 BLF6G10-260PRN
BLF7G10-300P
tbd
49.6
28
28
tbd
16
tbd
42
ASYM
ASYM
BLF6G15-250PB
BLF7G15LS-200
BLF6G15-250PB
BLF7G15LS-300P
44
44.5
47
47
47
49.5
50
50
27
28
32
28
28
30
32
28
14.5
16
16
15
16
16
15.5
16
42
44
38
40
41
42
37
42
SYM
SYM
SYM
SYM
SYM
SYM
SYM / MMPP
SYM / MPPM
1/2 BLC6G20-130PG
1/2 BLF7G20LS-160P
1/2 BLF6G20-230PRN
BLF6G18-140
1/2 BLF7G20-250P
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
1/2 BLC6G20-130PG
1/2 BLF7G20LS-160P
1/2 BLF6G20-230PRN
BLF6G18-140
1/2 BLF7G20-250P
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
45
46.4
48
49
49.5
50
50
28
28
31
31
28
32
28
16.5
16
15.3
17
tbd
15.5
16
40
39
38
41
tbd
37
40
SYM
SYM
SYM
SYM
SYM
SYM
SYM
BLF6G20-75
1/2 BLF7G20LS-250P
BLF6G20-140
2x BLF6G20-75
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
BLF6G20-75
1/2 BLF7G20LS-250P
BLF6G20-140
2x BLF6G20-75
BLF7G20LS-200
BLF6G20-230PRN
BLF7G20LS-250P
39
42
42
44.5
28
28
28
28
14.4
17
17.2
16
41
46
47.2
44
SYM
SYM
SYM
SYM
BLD6G21-50
1/2 BLF7G20-90P
1/2 BLF7G20-90P
1/2 BLF7G20LS-160P
BLF6G21-50
1/2 BLF7G20-90P
1/2 BLF7G20-90P
1/2 BLF7G20LS-160P
39
46.5
47
47
46.4
48
48.5
49
50
51
51
47
28
28
28
28
28
28
28
32
32
tbd
tbd
28
13
16.5
17
15.5
15
15
16.2
14.5
15
tbd
tbd
17
38
43
43
38
43
48
41
41
40
tbd
tbd
43
SYM
SYM
SYM
SYM
ASYM
3-WAY
SYM
ASYM
SYM
SYM
3-WAY
SYM
BLD6G22-50
BLF6G22-100
BLF7G22-130
BLF6G22-130
BLF7G22LS-130
BLF7G22-130
BLF7G22-200
BLF6G22-100
BLF6G22-180PN
BLF7G22LS-250P
BLF7G22LS-160
1/2 BLF7G22LS-250P
BLF6G22-50
BLF6G22-100
BLF7G22-130
BLF6G22-130
BLF7G22LS-200
7G22-130/7G22-130
BLF7G22-200
BLF6G22-180PN
BLF6G22-180PN
BLF7G22LS-250P
BLF7G22LS-160
1/2 BLF7G22LS-250P
42
44.5
45
28
28
28
14.5
tbd
tbd
43
tbd
tbd
SYM
ASYM
SYM
1/2 BLF7G27-75P
BLF7G27S-50
1/2 BLF7G27LS-150P
1/2 BLF7G27-75P
BLF7G27LS-100
1/2 BLF7G27LS-150P
42
42
44
44
44
44.5
45
47
tbd
28
28
28
28
28
28
28
28
tbd
15
15
14
14
14
14
tbd
tbd
tbd
43
37.5
40
40
40
38
tbd
tbd
tbd
SYM
SYM
ASYM
ASYM
ASYM
SYM
SYM
ASYM
ASYM
1/2 BLF7G27-75P
BLF6G27-45
BLF6G27-45
BLF6G27-45
BLF6G27-45
1/2 BLF6G27-150P
1/2 BLF7G27LS-150P
BLF7G27LS-100
BLF7G27L-140B
1/2 BLF7G27-75P
BLF6G27-45
2x BLF6G27-45
2x BLF6G27-45
BLC6G27-100
1/2 BLF7G27-150P
1/2 BLF7G27LS-150P
BLF7G27LS-140
BLF7G27L-250PB
41.5
43
44.5
28
28
28
tbd
11.5
tbd
tbd
32
tbd
SYM
SYM
SYM
1/2 BLF7G38LS-75P
BLF6G38-50
BLF7G38-75
1/2 BLF7G38LS-75P
BLF6G38-50
BLF7G38-75
NXP Semiconductors RF Manual 14th edition
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview
Why choose NXP Semiconductors’ RF power transistors for broadcast / ISM applications:
`` Highest power
`` Best ruggedness
`` Best broadband performance
`` Best-in-class design support
`` Very low thermal resistance design for unrivalled reliability
NXP’s leading LDMOS technologies together with advanced package concepts enable best in class performing
power amplifiers. We offer industry’s highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and
High Frequency (HF) applications as well as covering ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS Line up
Function
driver
Type
frange
PL(AV)
ηD
Gp
@VDS
MHz
W
%
dB
V
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1400
0 - 1400
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
100
24
100
24
140
33
140
33
100
100
20
300
300
500
1200
1000
47
33
47
33
49
34
49
34
45
56
70
70
70
70
71
75
21
22
21
22
21
21
21
21
18
18
27.5
27.2
27.2
26.5
24
26
40
40
40
40
50
50
50
50
32
32
50
50
50
50
50
50
frange
PL(AV)
ηD
Gp
@VDS
MHz
W
%
dB
V
0 - 1000
0 - 1000
0 - 1000
0 - 1000
470 - 860
470 - 860
0 - 1000
0 - 1000
0 - 1000
0 - 1000
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
100
24
100
24
300
75
120
30
120
30
250
110
250
110
255
115
47
33
47
33
32
46
48
31
48
31
46
31
46
31
47
32
21
22
21
22
21
21
21
21
21
21
19
19
19
19
19
19
40
40
40
40
42
42
50
50
50
50
50
50
50
50
50
50
Package
BLF871
SOT467C
driver
BLF871S
SOT467B
driver
BLF881
SOT467C
driver
BLF881S
SOT467C
final
BLF645
SOT540A
driver
final
final
final
BLF571
BLF573
BLF573S
BLF574
SOT467C
SOT502A3
SOT502B
SOT539A
final
BLF578
SOT539A
Mode of operation
2-TONE
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
2-TONE
CW
CW
CW
CW
CW
PULSED RF
CW
3.7.2.2 470-876 MHz (UHF) LDMOS line up
Function
Type
Package
driver
BLF871
SOT467C
driver
BLF871S
SOT467B
final
BLF878
SOT979A
driver
BLF881S
SOT467C
driver
BLF881
SOT467C
final
BLF888
SOT979A
final
BLF888AS
SOT539B
final
BLF888A
SOT539B
Mode of operation
2-TONE
DVB-T
2-TONE
DVB-T
CW
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
2-TONE
DVB-T
3.7.2.3 28-225 Mhz General purpose VDMOS
Function
final
final
Type
BLF177
BLF278
Package
SOT121B
SOT262A1
frange
PL(AV)
ηD
Gp
@VDS
MHz
W
%
dB
V
28-108
108-225
150
250-300
>35
50-80
20
14-20
50
50
Mode of operation
CW class AB
CW class AB
NXP Semiconductors RF Manual 14th edition
83
3.7.3 Microwave LDMOS RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview
Device naming conventions RF power microwave transistors
B L S 6 G 2731 S -120 G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency band (in 100MHz; here: 2700-3100)
G: standard LDMOS (<=28V)
H: high voltage LDMOS (50V)
LDMOS technology generation
A: avionics frequency band operation
L: L-Band frequency operation
S: S-Band frequency operation
L: high frequency power transistor
B: semiconductor die made of Si
Why choose NXP Semiconductors’ microwave RF power transistors
`` High gain
`` High efficiency
`` Highest reliability
`` Improved pulse droop and insertion phase
`` Improved ruggedness - overdrive without risk to +5 dB
`` Reduces component count and helps simplify L- and S-band radar design
`` Uses non-toxic, ROHS compliant packages
3.7.3.1 Avionics LDMOS transistors
Function
driver
final
final
final
Type
BLL6H0514-25
BLA6H0912-500
BLA6H1011-600
BLA6G1011-200R
Package
SOT467C
SOT634A
SOT539A
SOT502A2
frange
PL
ηD
Gp
@VDS
MHz
W
%
dB
V
500 - 1400
960 - 1215
1030 - 1090
1030 - 1090
25 (min)
450
600
200
50
50
52
65
19
17
19
20
50
50
50
28
Mode of operation
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
3.7.3.2 L-band LDMOS transistors
Function
driver
final
final
final
Type
BLL6H0514-25
BLL6H1214-500
BLL6H1214L(S)-250
BLL6HL(S)0514-130
Package
SOT467C
SOT539A
SOT502
SOT1135
frange
PL
ηD
Gp
@VDS
MHz
W
%
dB
V
500 - 1400
1200 - 1400
1200 - 1400
1200 - 1400
25 (min)
500 (min)
250
130
50
50
55
50
19
17
17
18
50
50
50
50
frange
PL
ηD
Gp
@VDS
MHz
W
%
dB
V
2700 - 3100
3100 - 3500
3100 - 3500
2700 - 3100
2700 - 3100
2900 - 3300
3100 - 3500
3100 - 3500
2900 - 3300
2700 - 3100
2700 - 3100
2700-2900
2700-2900
6
20
20
120
120
130
120
120
200
200
130
300
300
33
45
45
48
48
47
43
43
45
45
49
50
50
15
15.5
15.5
13.5
13.5
12.5
11
11
11
11
13
15
15
32
32
32
32
32
32
32
32
32
32
32
32
32
Mode of operation
PULSED RF; class AB
PULSED RF; class AB
Pulsed RF
Pulsed RF
3.7.3.3 S-band LDMOS transistors
Function
driver
driver
driver
final
final
final
final
final
final
final
final
final
final
84
Type
BLS6G2731-6G
BLS6G3135-20
BLS6G3135S-20
BLS6G2731-120
BLS6G2731S-120
BLS6G2933S-130
BLS6G3135-120
BLS6G3135S-120
BLS7G2933P-200
BLS7G2731P-200
BLS6G2731S-130
BLS7G2729-300P
BLS7G2729S-300P
Package
SOT975C
SOT608A
SOT608B
SOT502A
SOT502B
SOT922-1
SOT502A
SOT502B
pallet
pallet
SOT922
SOT539A
SOT539B
NXP Semiconductors RF Manual 14th edition
Mode of operation
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
PULSED RF; class AB
Pulsed RF
Pulsed RF
Pulsed RF
3.8 High Speed Data Converters
Analog performance, power optimization and ease of use are the perennial industry challenges
for high-speed data converters used in communications. For many years NXP has been quietly
developing data converters for captive applications. It is now opening it's high-speed data
converters to the entire market, offering a broad portfolio of highly competitive ADCs and DACs
featuring three different data interfaces, including the industry’s first implementation of the JEDEC
JESD204A serial data interface.
3.8.1 High Speed ADCs
Type
ADC1613D series
ADC1610S series
ADC1415S series
ADC1413D series *
ADC1412D series
ADC1410S series
ADC1215S series
ADC1213D series
ADC1212D series *
ADC1210S series
ADC1207S080
ADC1206S series
ADC1115S125
ADC1113D125
ADC1015S series
ADC1010S series
ADC1006S series
Supply
Power
SFDR SNR
Voltage Dissipation
Digital Interface
Package
(dBc) (dBFS)
(V)
(mW)
Dual 16-bit ADC up to 65/80/105/125Msps with serial interface 1.8 / 3.3
445
93
73.2
JESD204A
HVQFN56 8x8
Single 16-bit ADC up to 65/80/105/125Msps
1.8 / 3.3
350
93
73.2 LVCMOS and LVDS/DRR HVQFN40 6x6
Single 14-bit ADC up to 65/80/105/125Msps with input buffer 1.8 / 3.3/5
550
91
73.2 LVCMOS and LVDS/DRR HVQFN40 6x6
Dual 14-bit ADC up to 65/80/105/125Msps with serial interface 1.8 / 3.3
445
91
73.2
JESD204A
HVQFN56 8x8
Dual 14-bit ADC up to 65/80/105/125Msps
1.8 / 3.3
350
91
73.2 LVCMOS and LVDS/DRR HVQFN64 9x9
Single 14-bit ADC up to 65/80/105/125Msps
1.8 / 3.3
350
91
73.2 LVCMOS and LVDS/DRR HVQFN40 6x6
Single 12-bit ADC up to 65/80/105/125Msps with input buffer 1.8 / 3.3/5
550
91
70.7 LVCMOS and LVDS/DRR HVQFN40 6x6
Dual 12-bit ADC up to 65/80/105/125Msps with serial interface 1.8 / 3.3
445
91
70.7
JESD204A
HVQFN56 8x8
Dual 12-bit ADC up to 65/80/105/125Msps
1.8 / 3.3
350
91
70.7 LVCMOS and LVDS/DRR HVQFN64 9x9
Single 12-bit ADC up to 65/80/105/125Msps
1.8 / 3.3
350
91
70.7 LVCMOS and LVDS/DRR HVQFN40 6x6
Single 12-bit ADC 80 Msps
5
840
90
71
parallel LVCMOS
HTQFN48 7x7
Single 12-bit ADC 40/50/70 Msps
3.3 / 5.0
550
72
64
parallel CMOS and TTL
QFP44
Single 11-bit ADC up to 125Msps with input buffer
1.8 / 3.3/5
790
90
66.7 LVCMOS and LVDS/DRR HVQFN40 6x6
Dual 11-bit ADC up to 125Msps with serial interface
1.8 / 3.3
635
90
66.7
JESD204A
HVQFN56 8x8
Single 10-bit ADC up to 65/80/105/125Msps with input buffer 1.8 / 3.3/5
550
91
61.7 LVCMOS and LVDS/DRR HVQFN40 6x6
Single 10-bit ADC up to 125Msps
1.8 / 3.3
350
91
61.7 LVCMOS and LVDS/DRR HVQFN40 6x6
Single 10-bit ADC 50/70 Msps
3.3 / 5.0
550
71
59
parallel CMOS and TTL
QFP44
Description
3.8.2 High Speed DACs
Supply
Power
Voltage Dissipation
(V)
(mW)
DAC1408D series * Dual 14-bit DAC up to 650/750 Msps
1.8 / 3.3
850
DAC1405D series Dual 14-bit DAC up to 650/750 Msps
1.8 / 3.3
550
DAC1403D160
Dual 14-bit DAC 160 Msps
3.3
210
DAC1401D125
Dual 14-bit DAC 125 Msps
3.3
105
DAC1208D series
Dual 12-bit DAC up to 650/750 Msps
1.8 / 3.3
850
DAC1205D series
Dual 12-bit DAC up to 650/750 Msps
1.8 / 3.3
550
DAC1203D160
Dual 12-bit DAC 160 Msps
3.3
210
DAC1201D125
Dual 12-bit DAC 125 Msps
3.3
105
DAC1008D series
Dual 10-bit DAC up to 650/750 Msps
1.8 / 3.3
850
DAC1005D series
Dual 10-bit DAC up to 650/750 Msps
1.8 / 3.3
550
DAC1003D160
Dual 10-bit DAC 160 Msps
3.3
210
Dual 10-bit DAC 125 Msps
3.3
105
DAC1001D125
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red = New, highly recommended product
Type
Description
SFDR
(dBc)
Interpolation
Package
77
77
80
88
77
80
77
65
77
77
80
65
2x, 4x, 8x
2x, 4x, 8x
2x
2x, 4x, 8x
2x, 4x, 8x
2x
2x, 4x, 8x
2x, 4x, 8x
2x
-
HVQFN64 9x9
HTQFP100 14x14
HTQFP80 12x12
LQFP48
HVQFN64 9x9
HTQFP100 14x14
HTQFP80 12x12
LQFP48
HVQFN64 9x9
HTQFP100 14x14
HTQFP80 12x12
LQFP48
NXP Semiconductors RF Manual 14th edition
85
4. Design support
This chapter will make it easier to find and get hold of design-in information and materials,
with web links or references to the NXP representative / authorized distributor.
Streamline your RF design with leading RF EDA software
Design kits of the NXP high performance RF small signal products.
NXP offers it’s RF small signal portfolio in leading RF Electronic Design Automation (EDA) software of: Ansoft Designer RF,
AWR Microwave Office and Agilent Advanced Design System (ADS), including installation manuals, on the NXP web:
www.nxp.com/models. To predict the behavior of a design by performing simulations, RF EDA software enables design
engineers to reduce the number of design cycles, lower the risks and make better RF component choice for RF applications.
4.1 S-Parameters
4.2 Simulation models
S-Parameters help you to simulate the behaviour of our devices
to your specific adjustments for e.g. voltage, current.
4.2.1 Spice models
Wideband transistors, FETs & MMICs
First, click on the type number, which takes you directly
to the corresponding product information page on the
NXP Semiconductors internet.
Second, scroll down on this product information page
to find the S-Parameters.
BF67
BFG135
BFG198
BFG21W
BFG25A/X
BFG31
BFG35
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505
BFG520
BFG520W
BFG540
Wideband transistors
BFG540W
BFG541
BFG590
BFG591
BFG93A
BFG94
BFG97
BFM505
BFM520
BFQ149
BFQ18A
BFQ19
BFQ67
BFQ67W
BFR106
BFR505
BFR520
BFR540
BFR92A
BFR92AW
BFR93A
BFR93AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
BFS540
BFT25
BFT25A
BFT92
BFT92W
BFT93
BFT93W
BFU725F/N1
BRF505T
PBR941
PBR951
PRF947
PRF949
PRF957
BF1211
BF1211R
BF1211WR
FETs
BF1212
BF1212R
BF1212WR
BF511
BF513
BF862
BGA2001
BGA2003
BGA2711
BGA2748
BGA2771
BGA2776
BGA2709
BGU7003
BGA2712
BGM1011
MMICs
BGM1012
BGM1013
BGM1014
BGM2011
BGA2715
BGA2716
BGA2717
BGA2011
BGA2012
BGA6289
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NXP Semiconductors RF Manual 14th edition
BGA6489
BGA6589
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
Spice models help you to create the optimal performance
and to understand which external components have a certain
influence on that performance.
Wideband transistors, FETs & Varicaps diodes
First, click on the type number which takes you directly
to the corresponding product information page on the
NXP Semiconductors internet.
Second, scroll down on this product information page
to find the Spice models.
BFG10
BFG10/X
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW/X
BFG31
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG35
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
Wideband transistors
BFG505
BFG92A/X
BFG505/X
BFG93A
BFG505W/X
BFG94
BFG520
BFG97
BFG520/X
BFM505
BFG520/XR
BFM520
BFG520W
BFQ149
BFG520W/X
BFQ18A
BFG540
BFQ19
BFG540/X
BFQ540
BFG540/XR
BFQ67
BFG540W
BFQ67W
BFG540W/X
BFR106
BFG540W/XR
BFR505
BFG541
BFR505T
BFG590
BFR520
BFG590/X
BFR540
BFG591
BFR92A
BFG67
BFR92AW
BFG67/X
BFR93A
BF862
BF904
BF908
BB145B
BB149
BB149A
BB156
BB179
BB179B
FETs
BF909
Varicap diodes
BB201
BB202
BB207
BFR93AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
BFS540
BFT25A
BFT92
BFT92W
BFT93
BFT93W
PBR941
PBR951
PRF947
PRF949
PRF957
BF998
BB208-02
4.2.2 RF Power device simulation models
4.4.1 IC, MMIC and SiGe:C transistor demo boards
For easy design-in, NXP provides fully physics based, electrothermal models for the RF power transistors. These models are
available for Advanced Design System (ADS)® from Agilent and
for Microwave Office (MWO)® from Applied Wave Research
(AWR). Newly developed models per product are based on the
best in class RFLDMOS model, developed by NXP Research,
a recognized leader in physics based models. This concept
yields most reliable simulation results over a wide range of
electrical conditions. The standard models fully support DC,
AC, s-parameter (small signal), harmonic balance (large signal)
and time domain simulations. NXP RF power models allow
designers to assess the performance of complex PAsystems at
an early stage of the development process.
The available models come with all necessary libraries and
documentation, and can be downloaded at NXP’s website.
RF Small Signal demo boards are available (although limited)
via your local NXP representative or authorized distributor
(look at the last chapter: Web Links and Contacts).
Product Type
BLF369
BLF3G21-6
BLF571
BLF573(S)
BLF574
BLF578
BLF645
BLF6G10(LS)-135RN
BLF6G10L(S)-260PRN
BLF6G10(S)-45
BLF6G20-45
BLF6G20(LS)-180RN
BLF6G20(S)-230PRN
BLF6G20S-45
BLF6G21-10G
BLF6G22(LS)-180RN
BLF6G27-10(G)
ADS MWO
Product Type
Model Model
Y
N
BLF6G27(S)-45
Y
N
BLF6G27(LS)-135
Y
Y
BLF6G27(LS)-75
Y
Y
BLF6G38-10(G)
Y
Y
BLF6G38(LS)-100
Y
Y
BLF6G38(LS)-50
Y
N
BLF6G38(S)-25
N
Y
BLF7G22L(S)-130
Y
N
BLF871(S)
Y
Y
BLF878
Y
Y
BLF881(S)
Y
N
BLF888
Y
N
BLL6H0514-25
Y
Y
BLL6H1214-500
Y
N
BLM6G22-30
Y
N
BLS6G3135(S)-120
Y
N
BLS6G3135(S)-20
ADS MWO
Model Model
Y
Y
Y
N
Y
N
Y
N
Y
N
Y
Y
Y
Y
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
Y
N
BFU725F/N1
BGA2001
BGA2003
BGA2011
BGA2012
BGA2031
BGA2709
BGA2711
BGA2712
BGA2714
BGA2715
BGA2716
BGA2748
BGA2771
RF small signal demo boards
BGA2776
BGM1011
BGA2800
BGM1012
BGA2801
BGM1013
BGA2815
BGM1014
BGA2816
BGU7003
BGA2850
BGU7005
BGA2865
TFF1003HN
BGA2866
TFF11070HN
BGA6289
TFF11073HN
BGA6489
TFF11077HN
BGA6589
TFF11080HN
BGA6589
TFF11084HN
BGA7024
TFF11088HN
BGA7124
TFF11092HN
BGU7005 demo board
TFF11096HN
TFF11101HN
TFF11105HN
TFF11110HN
TFF11115HN
TFF11121HN
TFF11126HN
TFF11132HN
TFF11139HN
TFF11145HN
TFF11152HN
BGA7124 demo board
4.4.2 RF power transistor demo boards
4.3 Application notes
http://www.nxp.com/products/all_appnotes/
Demo boards are available (although limited) via your local NXP
representative (see the last chapter: Web Links and Contacts).
For the application notes we refer you to chapter 1 of this
manual. For each application, we have given the recommended
application notes which are available on the internet (with
interactive link) or via your local NXP representative or authorized
distributor (look at the last chapter: Web Links and Contacts).
4.4 Demo boards
BGA2001 demo board
NXP Semiconductors RF Manual 14th edition
87
4.4.3 High Speed Converter demo boards
4.7 Datasheets
High Speed Converter demo boards are available (although
limited) via your local NXP representative or authorized
distributor (look at the last chapter; Web Links and Contacts).
For all released and most non-released products for RF power,
datasheets are available on the NXP Semiconductors internet.
Simply ‘clicking’ on a product type (in this manual chapter 1 or 2)
takes you to the corresponding product information page on the
NXP Semiconductors website.
ADC Demo Boards
Type
ADC1006S series
ADC1010S series
ADC1015S series
ADC1113D125
ADC1115S125
ADC1206S series
ADC1207S080
ADC1210S series
ADC1212D series
ADC1213D series
ADC1215S series
ADC1410S series
ADC1412D series
ADC1413D series
ADC1415S series
ADC1610S series
ADC1613D series
DAC Demo Boards
Type
DAC1001D125
DAC1003D160
DAC1005D series
DAC1201D125
DAC1203D160
DAC1401D125
DAC1403D160
DAC1405D series
DAC1205D series
DAC1408D series
DAC1208D series
DAC1008D series
Different versions available
via NXP sales representative
4.5 Samples of products in development
For development samples, please ask your local NXP
representative or authorized distributor (see last chapter:
Web Links and Contacts) to order the latest versions at the
RF development team.
4.6 Samples of released products
For all released and most non-released products for RF power,
samples are available in the sample warehouse. Look on the
home page of the NXP web site for the link to the online sample
store: www.nxp.com
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NXP Semiconductors RF Manual 14th edition
4.8 Design-in support
If you need special design-in support from our design-in
engineers, please ask your local NXP representative or
authorized distributor (see last chapter: Web Links and Contacts),
to pass on your request to the RF development teams.
4.9 NEW: interactive selection guides
For all RF product groups, you can find easy-to-use parametric
filters to help you to chose the right device for your design, e.g.
www.nxp.com/mmics, click on selection guide.
5. Cross-references & replacements
NXP cross-references:
http://www.nxp.com/search/
NXP end-of-life:
http://www.nxp.com/products/eol/
5.1 Cross-references: Manufacturer types versus NXP types
In alphabetical order of manufacturer type
Abbreviations:
BS diode
CATV PD
CATV PPA
CATV PPA/HG
CATV RA
FET
Standard
MMIC
Varicap
WB trs 1-4
WB trs 5-7
Band Switch Diode
CATV Power Doubler
CATV Push Pull Amplifier
CATV Push Pull Amplifier High Gain
CATV Reverse Amplifier
Field Effect Transistor
Standard
Monolithic Microwave Integrated Circuit
Varicap Diode
Wideband Transistor 1-4 generation
Wideband Transistor 5-7 generation
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
10500
10502
0910-150M
0910-300M
0910-60M
0912-45
1011LD200
1011LD300
1015MP
1035MP
1214-30
1214-32L
1SS314
1SS356
1SS381
1SS390
1SV172
1SV214
1SV214
1SV215
1SV228
1SV231
1SV232
1SV233
1SV234
1SV239
1SV241
1SV246
1SV247
1SV248
1SV249
1SV250
1SV251
1SV252
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
Rohm
Toshiba
Rohm
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Sanyo
Toshiba
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
BLA6H0912-500
BLA6H0912-500
BLF871
BLF878
BLF878
BLL6H0514-25
BLA6G1011-200R
BLA6G1011-200R
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLL6H0514-26
BA591
BA591
BA277
BA891
BAP50-04
BB149
BB149A
BB153
BB201
BB152
BB148
BAP70-03
BAP64-04
BB145B
BAP64-02
BAP64-04W
BAP70-02
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BAP50-04W
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
BS diode
BS diode
BS diode
BS diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
1SV254
1SV263
1SV264
1SV266
1SV267
1SV269
1SV270
1SV271
1SV278
1SV279
1SV282
1SV282
1SV283
1SV283
1SV284
1SV288
1SV290
1SV294
1SV305
1SV307
1SV308
1SV322
1T362
1T362A
1T363A
1T368A
1T369
1T379
1T397
1T399
1T402
1T403
1T404A
1T405A
Toshiba
Sanyo
Sanyo
Sanyo
Sanyo
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Toshiba
Toshiba
Toshiba
Toshiba
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
PEC
BB179
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BB148
BB156
BAP50-03
BB179
BB179
BB178
BB187
BB178
BB187
BB156
BB152
BB182
BAP70-03
BB202
BAP51-03
BAP51-02
BB202LX
BB149
BB149A
BB153
BB148
BB152
BB131
BB152
BB148
BB179B
BB178
BB187
BB187
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
Varicap
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
NXP Semiconductors RF Manual 14th edition
89
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
1T406
1T408
2729-125
2729-170
2731-100M
2931-150
2F1G20DS
2F1G20P
2F1G22DS
2F1G23P
2F1G24DS
2F722DS
2F8718P
2F8719DS
2F8720DS
2F8723P
2F8734P
2N3330
2N3331
2N4220
2N4856
2N4857
2N4858
2N5114
2N5115
2N5116
2N5432
2N5433
2N5434
2N5457
2N5458
2N5459
2N5653
2N5654
2SC4094
2SC4095
2SC4182
2SC4184
2SC4185
2SC4186
2SC4226
2SC4227
2SC4228
2SC4247
2SC4248
2SC4315
2SC4320
2SC4321
2SC4325
2SC4394
2SC4536
2SC4537
2SC4592
2SC4593
2SC4703
2SC4784
2SC4807
2SC4842
2SC4899
2SC4900
2SC4901
2SC4988
2SC5011
2SC5012
2SC5065
2SC5085
2SC5087
2SC5088
2SC5090
2SC5092
2SC5095
2SC5107
2SC5463
2SC5593
2SC5594
2SC5623
PEC
PEC
Microsemi
Microsemi
Microsemi
Microsemi
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
RFHIC
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
NEC
Renesas
Renesas
Renesas
NEC
Renesas
Renesas
Toshiba
Renesas
Renesas
Renesas
Renesas
NEC
NEC
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Renesas
Renesas
Renesas
BB182
BB187
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
CGD1042H
CGY1041
CGD1042H
CGY1043
CGD1044H
BGD816L
BGY885A
BGD812
BGD814
BGY887
CGY888C
J176
J176
BF245A
BSR56
BSR57
BSR58
J174
J175
J175
J108
J108
J109
BF245A
BF245A
BF245B
J112
J111
BFG520/XR
BFG520/XR
BFS17W
BFS17W
BFS17W
BFR92AW
PRF957
BFQ67W
BFS505
BFR92AW
BFR92AW
BFG520/XR
BFG520/XR
BFQ67W
BFS505
PRF957
BFQ19
BFR93AW
BFG520/XR
BFS520
BFQ19
BFS505
BFQ18A
BFG540W/XR
BFS505
BFG520/XR
BFS520
BFQ540
BFG540W/XR
BFG540W/XR
PRF957
PRF957
BFG520/XR
BFG540W/XR
BFS520
BFG520/XR
BFS505
BFS505
BFQ67W
BFG410W
BFG425W
BFG410W
Varicap
Varicap
Microwave
Microwave
Microwave
Microwave
CATV PD
CATV PP
CATV PD
CATV PP
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PP
CATV PP
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
2SC5624
2SC5631
2SC6023
2SJ105GR
2SK163-K
2SK163-L
2SK163-M
2SK163-N
2SK210BL
2SK370BL
2SK370GR
2SK370V
2SK381
2SK43
2SK435
2SK508
3SK290
BA592
BA595
BA595
BA597
BA885
BA892
BA892-02V
BA892-02V
BA892V-02V-GS08
BA895
BAR14-1
BAR15-1
BAR16-1
BAR17
BAR50-02L
BAR50-02V
BAR50-02V
BAR50-02V
BAR50-03W
BAR60
BAR61
BAR63
BAR63-02L
BAR63-02L
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-05
BAR63-05W
BAR63V-02V-GS08
BAR63V-05W-GS08
BAR64-02LRH
BAR64-02V
BAR64-02W
BAR64-03W
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64V-02V-GS08
BAR64V-04-GS08
BAR64V-05-GS08
BAR64V-06-GS08
BAR64V-06W-GS08
BAR65-02L
BAR65-02V
BAR65-02W
BAR65-03W
BAR65V-02V-GS08
BAR66
BAR67-02W
BAR67-03W
BAT18-04
BB304C
BB304M
BB305C
BB305M
Renesas
Renesas
Sanyo
Standard
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Renesas
Renesas
Renesas
Renesas
BFG425W
BFQ540
BFG424W
J177
J113
J113
J113
J113
PMBFJ309
J109
J109
J109
J113
J113
J113
PMBFJ308
BF998WR
BA591
BAP51-03
BAP70-03
BAP70-03
BAP70-03
BA891
BA277
BA891
BA891
BAP70-02
BAP70-03
BAP70-03
BAP70-03
BAP50-03
BAP50LX
BAP50-02
BAP50-03
BAP50-05
BAP70-02
BAP50-03
BAP50-03
BAP63-03
BAP63-02
BAP63LX
BAP63-02
BAP63-02
BAP63-03
BAP63-05W
BAP63-05W
BAP63-02
BAP63-05W
BAP64LX
BAP64-02
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64-02
BAP64-04
BAP64-05
BAP64-06
BAP64-06W
BAP65LX
BAP65-02
BAP65-02
BAP65-03
BAP65-02
BAP1321-04
BAP1321-02
BAP1321-03
BAT18
BF1201WR
BF1201R
BF1201WR
BF1201R
WB trs 5-7
WB trs 1-4
WB trs 5-7
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
FET
FET
FET
90
NXP Semiconductors RF Manual 14th edition
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
BB403M
BB501C
BB501M
BB502C
BB502M
BB503C
BB503M
BB535
BB545
BB555
BB565
BB601M
BB639
BB639
BB640
BB641
BB659
BB664
BB664
BB669
BB814
BB831
BB833
BB835
BBY58-02V
BBY65
BF1005S
BF1009S
BF1009SW
BF2030
BF2030R
BF2030W
BF244A
BF244B
BF244C
BF247A
BF247B
BF247C
BF256A
BF256B
BF256C
BF770A
BF771
BF771W
BF772
BF775
BF775A
BF775W
BF851A
BF851B
BF851C
BF994S
BF996S
BF998
BF998
BF998-GS08
BF998R
BF998R-GS08
BF998RW
BF998W
BFG135A
BFG193
BFG194
BFG196
BFG19S
BFG235
BFP180
BFP181
BFP181T-GS08
BFP182
BFP183
BFP183R
BFP183T-GS08
BFP183TW-GS08
BFP193
BFP193W
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Infineon
Infineon
Infineon
Infineon
Renesas
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Vishay
Vishay
Infineon
Vishay
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
BF909R
BF1202WR
BF1202R
BF1202WR
BF1202R
BF1202WR
BF1202R
BB149
BB149A
BB179B
BB179
BF1202
BB148
BB153
BB152
BB152
BB178
BB178
BB187
BB152
BB201
BB131
BB131
BB131
BB202
BB202
BF1105
BF1109
BF1109WR
BF1101
BF1101R
BF1101WR
BF245A
BF245B
BF245C
J108
J108
J108
BF245A
BF245B
BF245C
BFR93A
PBR951
BFS540
BFG540
BFR92A
BFR92A
BFR92AW
BF861A
BF861B
BF861C
BF994S
BF996S
BF998
BF998
BF998
BF998R
BF998R
BF998WR
BF998WR
BFG135
BFG198
BFG31
BFG541
BFG97
BFG135
BFG505/X
BFG67/X
BFG67/X
BFG67/X
BFG520/X
BFG520/XR
BFG520/X
BFG520W/X
BFG540/X
BFG540W/XR
FET
FET
FET
FET
FET
FET
FET
Varicap
Varicap
Varicap
Varicap
FET
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
BFP196T-GS08
BFP196TR-GS08
BFP196TRW-GS08
BFP196TW-GS08
BFP196W
BFP280
BFP405
BFP420
BFP450
BFP67-GS08
BFP67R-GS08
BFP740
BFP740F
BFP81
BFP92A-GS08
BFP93A
BFP93A-GS08
BFQ193
BFQ19S
BFQ67-GS08
BFR106
BFR180
BFR180W
BFR181
BFR181T-GS08
BFR181TW-GS08
BFR181W
BFR182
BFR182W
BFR183
BFR183T-GS08
BFR183TW-GS08
BFR183W
BFR193
BFR193TW-GS08
BFR193W
BFR196T-GS08
BFR196TW-GS08
BFR35AP
BFR92AL
BFR92AW-GS08
BFR92P
BFR92W
BFR93A
BFR93AL
BFR93AW
BFR93AW-GS08
BFR93-GS08
BFS17-GS08
BFS17-GS08
BFS17L
BFS17P
BFS17W
BFS17W-GS08
BFS481
BFS483
BFT92
BFT93
BIC701C
BIC701M
BIC702C
BIC702M
BIC801M
BSR111
BSR112
BSR113
BSR174
BSR175
BSR176
BSR177
CA901
CA901A
CA922
CA922A
CMY91
CMY91
Vishay
Vishay
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Vishay
Infineon
Vishay
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Infineon
Infineon
Vishay
Vishay
Infineon
Infineon
Vishay
Infineon
Vishay
Vishay
Infineon
Freescale
Vishay
Infineon
Infineon
Infineon
Freescale
Infineon
Vishay
Vishay
Vishay
Vishay
Freescale
Infineon
Infineon
Vishay
Infineon
Infineon
Infineon
Infineon
Renesas
Renesas
Renesas
Renesas
Renesas
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Infineon
Infineon
BFG540/X
BFG540/XR
BFG540W/XR
BFG540W/X
BFG540W/XR
BFG505/X
BFG410W
BFG425W
BFG480W
BFG67/X
BFG67/X
BFU725F
BFU725F
BFG92A/X
BFG92A/X
BFG93A/X
BFG93A/X
BFQ540
BFQ19
BFQ67W
BFR106
BFR505
BFS505
BFR520
BFR520
BFS520
BFS520
PBR941
PRF947
PBR951
PBR951
PRF957
PRF957
PBR951
PRF957
PRF957
BFR540
BFS540
BFR92A
BFR92A
BFR92AW
BFR92A
BFR92AW
BFR93A
BFR93A
BFR93AW
BFR93AW
BFR93A
BFS17
BFS17A
BFS17
BFS17A
BFS17W
BFS17W
BFM505
BFM520
BFT92
BFT93
BF1105WR
BF1105R
BF1105WR
BF1105R
BF1105
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGX885N
BGX885N
BGD885
BGD885
BGA2022
BGA2022
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
CATV PPA
CATV PPA
CATV PD
CATV PD
MMIC
WB trs 1-4
NXP Semiconductors RF Manual 14th edition
91
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
CXE1089Z
CXE1089Z
D5540185
D7540185
D7540200
D8640185
DME500
EC2C03C
F2046
F2048
F2247
FSD273TA
FSD273TA
HBFP0405
HBFP0420
HBFP0450
HSC277
HSMP3800
HSMP3802
HSMP3804
HSMP3810
HSMP3814
HSMP381B
HSMP381C
HSMP381F
HSMP3820
HSMP3822
HSMP3830
HSMP3832
HSMP3833
HSMP3834
HSMP3860
HSMP3862
HSMP3864
HSMP386B
HSMP386E
HSMP386L
HSMP3880
HSMP3890
HSMP3892
HSMP3894
HSMP3895
HSMP389B
HSMP389C
HSMP389F
HVB14S
HVC131
HVC132
HVC200A
HVC200A
HVC202A
HVC202B
HVC300A
HVC300B
HVC306A
HVC306B
HVC355B
HVC359
HVC363A
HVC376B
HVC376B
HVD132
HVU131
HVU132
HVU202(A)
HVU202(A)
HVU300A
HVU307
HVU315
HVU316
HVU363A
HVU363A
HVU363B
IB0810M100
IB0912L30
IB0912L70
RFMD
RFMD
Standard
Standard
Standard
Standard
Microsemi
Sanyo
POLYFET
POLYFET
POLYFET
Skyworks
Skyworks
Agilent
Agilent
Agilent
Renesas
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Agilent
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Integra
Integra
Integra
BGA6489
BGA6589
BGD502
BGD702
BGD704
BGD802
BLAH0912-500
BB145B
BLF542
BLF543
BLF522
BB148
BB178
BFG410W
BFG425W
BFG480W
BA277
BAP70-03
BAP50-04
BAP50-05
BAP50-03
BAP50-05
BAP50-03
BAP50-05
BAP64-05W
BAP1321-03
BAP1321-04
BAP64-03
BAP64-04
BAP64-06
BAP64-05
BAP50-03
BAP50-04
BAP50-05
BAP50-02
BAP50-04W
BAP50-05W
BAP51-03
BAP51-03
BAP64-04
BAP64-05
BAP51-02
BAP51-02
BAP64-04
BAP51-05W
BAP50-04W
BAP65-02
BAP51-02
BB178
BB187
BB179
BB179B
BB182
BB182
BB187
BB187
BB145B
BB202
BB178
BB198
BB202
BAP51-02
BAP65-03
BAP51-03
BB149
BB149A
BB152
BB148
BB148
BB131
BB148
BB153
BB148
BLF871
BLA6H0514-25
BLA6H0514-25
MMIC
MMIC
CATV PD
CATV PD
CATV PD
CATV PD
Microwave
Varicap
Broadcast
Broadcast
Broadcast
Varicap
Varicap
WB trs 5-7
WB trs 5-7
WB trs 5-7
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Broadcast
Microwave
Microwave
IB0912M210
IB0912M500
IB0912M600
IB1011L15
IB1011L220
IB1011L40
IB1011L470
IB1011M140
IB1011M190
IB1011M250
IB1011S190
IB1011S250
IB1012S10
IB1012S20
IB2729M5
IB2729M90
IB2731M110
IB2731MH110
IB2931MH155
IB3134M100
IB3135MH100
IBP1214M700
IBP1214M700
IBP3135M150
IDM175CW300
IDM500CW150
IDM500CW200
IDM500CW300
IDM500CW80
ILD1011M15
ILD1011M150
ILD1011M15HV
ILD1011M160HV
ILD1011M250
ILD1011M30
ILD1011M400
ILD1011M450HV
ILD1011M550HV
ILD1214M10
ILD2731M140
ILD3135M120
ILP1214EL200
INA-51063
J270
J308
J309
J310
JDP2S01E
JDP2S01U
JDP2S02AFS
JDP2S02AS
JDP2S02T
JDP2S04E
JDS2S03S
JTDA150A
KP2310R
KTK920BT
KTK920T
KV1835E
LC421
MA2S077
MA2S357
MA2S357
MA2S372
MA2S374
MA2SV01
MA357
MA366
MA368
MA372
MA372
MA4CP101A
MA4P274-1141
MA4P275-1141
MA4P275CK-287
MA4P277-1141
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Agilent
Standard
Standard
Standard
Standard
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Microsemi
Toko
KEC
KEC
Toko
POLYFET
Standard
Matsushita
Matsushita
Matsushita
Matsushita
Renesas
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
Matsushita
BLA6H0514-25
BLA6H0912-500
BLA6H0912-500
BLA6H0514-25
BLA6G1011-200R
BLA6H0514-25
BLA6H0912-500
BLA6G1011-200R
BLA6G1011-200R
BLA6G1011-200R
BLA6G1011-200R
BLA6G1011-200R
BLA6H0514-25
BLA6H0514-25
BLS6G2731-6G
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
BLS6G2731-120
BLS6G3135S-120
BLS6G3135S-120
BLL6H1214-500
BLL6H1214-500
BLS6G3135S-120
BLF278
BLF881
BLF888
BLF878
BLF871
BLL6H0514-25
BLA6G1011-200R
BLA6H0514-25
BLA6G1011-200R
BLA6G1011-200R
BLA6H0514-25
BLA6H0912-500
BLA6H0912-500
BLA6H1011-600
BLL6H0514-25
BLS6G2731-120
BLS6G3135S-120
BLS7G2933P-200
BGA2001
J177
J108
J109
J110
BAP65-02
BAP65-03
BAP51-02
BAP51-03
BAP63-02
BAP50-02
BA891
BLF177
BAP64-04W
BF1108
BF1108R
BB199
BLF544
BA277
BB178
BB187
BB179
BB182
BB202
BB153
BB148
BB131
BB149
BB149A
BAP65-03
BAP51-03
BAP65-03
BAP65-05
BAP70-03
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
MMIC
FET
FET
FET
FET
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
Broadcast
PIN diode
FET
FET
Varicap
Broadcast
BS diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
92
NXP Semiconductors RF Manual 14th edition
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MA4P278-287
MA4P789-1141
MA4P789ST-287
MAX2659
MC7712
MC7716
MC7722
MC7726
MC-7831
MC-7831-HA
MC-7832
MC-7832-HA
MC-7833
MC-7836
MC-7836
MC-7845
MC-7846
MC-7847
MC7852
MC7866
MC-7881
MC-7882
MC-7883
MC-7884
MC-7891
MC-7893
MC-7894
MC-7896
MCH4009
MD7P19130
MD7P19130H
MD7P19130H (2)
MDS400
MDS800
MHW10186N
MHW10236N
MHW10247AN
MHW10276N
MHW1224
MHW1244
MHW1253LA
MHW1254L
MHW1254LA
MHW1304L
MHW1304LA
MHW1304LAN
MHW1346
MHW1353LA
MHW1354LA
MHW5182A
MHW5185B
MHW5222A
MHW5272A
MHW5342A
MHW5342T
MHW6182
MHW6182-6
MHW6182T
MHW6185B
MHW6185T
MHW6205
MHW6222
MHW6222B
MHW6222T
MHW6272
MHW6272T
MHW6342
MHW6342T
MHW7182B
MHW7182C
MHW7185C2
MHW7185CL
MHW7205C
MHW7205CL
MHW7205CLN
MHW7222
Matsushita
Matsushita
Matsushita
Maxim
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Sanyo
Freescale
Freescale
Freescale
Microsemi
Microsemi
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BAP70-03
BAP1321-03
BAP1321-04
BGU7005
BGY785A
BGY787
BGY785A
BGY787
BGY885A
BGY1085A
BGY887
CGY1041
BGY887B
BGY887B
CGY1047
BGD802
CGD942C
CGD944C
BGY885A
BGD816L
BGD802
BGD814
CGD942C
CGD944C
CGD1042H
CGD1042H
CDG1044H
CGD1044H
BFG424F
BLF6G20LS-110
BLF6G20LS-75
BLF6G20(LS)-180RN
BLA6H0912-500
BLA6H1011-600
BGY1085A
CGY1043
CGD1044H
CGY1047
BGY67
BGY67A
BGY67A
BGY68
BGY68
BGY68
BGY68
BGY68
BGY67A
BGY67A
BGY68
BGY585A
BGD502
BGY587
BGY587B
BGY588N
BGY588N
BGY585A
BGY685A
BGY585A
BGD502
BGD502
BGD704
BGY587
BGY687
BGY587
BGY587B
BGY587B
BGY588N
BGY588N
BGY785A
BGY785A
BGD712
BGD712
BGD714
BGD714
BGD714
BGY787
PIN diode
PIN diode
PIN diode
MMIC
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
WB trs 5-7
Base Station
Base Station
Base station
Microwave
Microwave
CATV PP
CATV PP
CATV PD
CATV PP
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV PPA
CATV PD
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
MHW7222A
MHW7222B
MHW7242A
MHW7272A
MHW7292
MHW7292A
MHW7292AN
MHW7342
MHW8142
MHW8182B
MHW8182C
MHW8182CN
MHW8185
MHW8185L
MHW8188AN
MHW8205
MHW820L
MHW8222BN
MHW8227A
MHW8227AN
MHW8247A
MHW8247AN
MHW8292
MHW8342
MHW8342N
MHW9146
MHW9182B
MHW9182C
MHW9182CN
MHW9186
MHW9186A
MHW9187N
MHW9188AN
MHW9188N
MHW9227AN
MHW9242A
MHW9247
MHW9247A
MHW9247AN
MHW9247N
MHWJ5272A
MHWJ7185A
MHWJ7205A
MHWJ7292
MHWJ9182
MMBF4391
MMBF4392
MMBF4393
MMBF4860
MMBF5484
MMBFJ113
MMBFJ174
MMBFJ175
MMBFJ176
MMBFJ177
MMBFJ308
MMBFJ309
MMBFJ310
MMBFU310
MMBR5031L
MMBR5179L
MMBR571L
MMBR901L
MMBR911L
MMBR920L
MMBR931L
MMBR941BL
MMBR941L
MMBR951AL
MMBR951L
MMBV105GLT1
MMBV109LT1
MMG2001NT1
MMG2001T1
MPAL2731M15
MPAL2731M30
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
ONSemicond.
ONSemicond.
Freescale
Freescale
Integra
Integra
BGY787
BGY787
BGE787B
BGE787B
BGE787B
BGE787B
BGE787B
BGE788
BGY883
BGY885A
BGY885A
BGY885A
BGD814
BGD812
CGD942C
BGD814
BGD814
BGY887
CGD942C
CGD942C
CGD944C
CGD944C
BGY887B
BGY888
CGY888C
BGY883
BGY1085A
BGY1085A
BGY1085A
BGY885A
BGY885A
CGD942C
CGD942C
CGD942C
CGD942C
CGD1042
CGD944C
CGD944C
CGD944C
CGD944C
BGY587B
BGD712
BGD714
BGE787B
BGY1085A
PMBF4391
PMBF4392
PMBF4393
PMBFJ112
BFR31
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ310
BFS17
BFS17A
PBR951
BFR92A
BFR93A
BFR93A
BFT25A
PBR941
PBR941
PBR951
PBR951
BB156
BB148
BGD816L
BGD816L
BLS6G2731-6G
BLS6G2731-6G
CATV PPA
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PD
CATV PPA/HG
CATV PPA
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Varicap
Varicap
CATV PD
CATV PD
Microwave
Microwave
NXP Semiconductors RF Manual 14th edition
93
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MPAL3035M15
MPAL3035M30
MPF102
MPF970
MPF971
MRF10005
MRF1000MB
MRF10031
MRF1004MB
MRF10120
MRF10150
MRF10350
MRF10502
MRF1090MB
MRF1150MA
MRF1150MB
MRF134
MRF136
MRF136Y
MRF137
MRF140
MRF141
MRF141G
MRF148A
MRF150
MRF151
MRF151A
MRF151G
MRF154
MRF157
MRF158
MRF160
MRF166C
MRF166W
MRF171A
MRF173
MRF173CQ
MRF174
MRF175GU
MRF175GV
MRF175LU
MRF176GU
MRF176GV
MRF177
MRF18030ALR3(1)
MRF18030ALR3(1)
MRF18030ALSR3(1)
MRF18030ALSR3(1)
MRF18030BLR3(1)
MRF18030BLR3(1)
MRF18030BLSR3(1)
MRF18030BLSR3(1)
MRF18060AL(2)
MRF18060BL(2)
MRF18085AL(2)
MRF18085BL (2)
MRF18085BL(2)
MRF18090AR3(1)
MRF18090B (2)
MRF18090B(2)
MRF19030L(2)
MRF19030L(2)
MRF19045L(2)
MRF19060L(2)
MRF19085LR3(1)
MRF19085LSR3(1)
MRF19090R3 (1)
MRF19090R3(1)
MRF19090SR3 (1)
MRF19090SR3(1)
MRF19125 (2)
MRF19125(2)
MRF21010LR1(1)
MRF21010LSR1(1)
MRF21030LR3(1)
MRF21030LSR3(1)
Integra
Integra
Standard
Standard
Standard
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BLS6G2731-6G
BLS6G2731-6G
BF245A
J174
J176
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLA6H0912-500
BLA6H0912-500
BLA6H0912-500
BLF871
BLF871
BLF881
BLF881
BLF177
BLF177
BLF278
BLF175
BLF177
BLF177
BLF177
BLF278
BLF574
BLF574
BLF871
BLF871
BLF871
BLF881
BLF881
BLF871
BLF871
BLF881
BLF881
BLF278
BLF871
BLF881
BLF573S
BLF871
BLF6G21-30
BLF6G20-45
BLF6G21-30
BLF6G20-45
BLF6G21-30
BLF6G20-45
BLF6G21-30
BLF6G20-45
BLC6G20-75
BLC6G20-75
BLC6G20-75
BLF7G20L(S)-300P
BLC6G20-75
BLF6G20-110
BLF7G20L(S)-300P
BLF6G20-110
BLF6G21-30
BLF6G20-45
BLF6G20-45
BLF6G20-45
BLF6G20-110
BLF6G20-110
BLF7G20L(S)-300P
BLF6G20-110
BLF7G20L(S)-300P
BLF6G20-110
BLF6G20(LS)-110
BLF6G20-140
BLF3G21-6
BLF3G21-6
BLF6G22-30
BLF6G22-45
Microwave
Microwave
FET
FET
FET
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base station
Base Station
Base Station
Base station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base station
Base Station
Base station
Base Station
Base station
Base Station
Base Station
Base Station
Base Station
Base Station
MRF21045LR3(1)
MRF21045LSR3(1)
MRF21060L(2)
MRF21085L(2)
MRF21090(2)
MRF21120R6(1)
MRF21125(2)
MRF21125SR3(1)
MRF21180R6(1)
MRF275G
MRF275L
MRF281SR1(1)
MRF281ZR1(1)
MRF282SR1(1)
MRF282ZR1(1)
MRF284LR1(1)
MRF284LSR1(1)
MRF313
MRF314
MRF316
MRF317
MRF321
MRF323
MRF327
MRF372 (3)
MRF373ALR1 (2)
MRF374A (1)
MRF377H (2)
MRF377H(2)
MRF392
MRF393
MRF421
MRF422
MRF426
MRF428
MRF429
MRF448
MRF454
MRF455
MRF577
MRF5811L
MRF5P20180HR6(1)
MRF5P21045NR1 (1)
MRF5P21180HR6 (1)
MRF5P21180HR6(1)
MRF5S19060N(2)
MRF5S19090HR3(1)
MRF5S19090HSR3(1)
MRF5S19100H (2)
MRF5S19100H(2)
MRF5S19130H (2)
MRF5S19130H(2)
MRF5S19150H (2)
MRF5S19150H(2)
MRF5S21045N (2)
MRF5S21045N(2)
MRF5S21090HR3(1)
MRF5S21090HSR3(1)
MRF5S21100HR3(1)
MRF5S21100HSR3(1)
MRF5S21130HR3(1)
MRF5S21130HSR3(1)
MRF5S21150H(2)
MRF5S9150H (2)
MRF6P18190HR6(1)
MRF6P21190HR6 (1)
MRF6P21190HR6(1)
MRF6P3300H (2)
MRF6P3300H(2)
MRF6S18060N(2)
MRF6S18100N(2)
MRF6S18140H(2)
MRF6S19060N(2)
MRF6S19100H (2)
MRF6S19100H(2)
MRF6S19100N(2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BLF6G22-45
BLF6G22-45
BLF6G22-75
BLF6G22-100
BLF6G22-100
BLF6G22-130
BLF6G22-130
BLF6G22-130
BLF6G22-180
BLF881
BLF871
BLF6G21-6
BLF6G21-6
BLF1822-10
BLF1822-10
BLF3G21-30
BLF3G21-30
BLF871
BLF881
BLF871
BLF871
BLF871
BLF871
BLF871
BLF881
BLF878
BLF881
BLF878
BLF872
BLF881
BLF871
BLF871
BLF177
BLF871
BLF177
BLF177
BLF573S
BLF871
BLF871
PRF957
BFG93A/X
BLF6G20-180P
BLD6G22L(S)-50
BLF6G22(LS)-180RN
BLF6G20-180P
BLF6G20-75
BLF6G20-110
BLF6G20-110
BLF7G20L(S)-140P
BLF6G20-110
BLF6G20(LS)-110
BLF6G20-140
BLF6G20LS-140
BLF6G22-150P
BLD6G22L(S)-50
BLF1822-10
BLF6G22-100
BLF6G22-100
BLF6G22-100
BLF6G22-100
BLF6G22-130
BLF6G22-130
BLF6G22-150P
BLF6G10(LS)-160RN
BLF6G20-180P
BLF7G22LS-130
BLF6G20-180P
BLF888
BLF878
BLF6G20-75
BLF6G20-110
BLF6G20-140
BLF6G20-75
BLF7G20L(S)-140P
BLF6G20-110
BLF6G20-110
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Broadcast
Broadcast
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
WB trs 1-4
WB trs 1-4
Base Station
Base station
Base station
Base Station
Base Station
Base Station
Base Station
Base station
Base Station
Base station
Base Station
Base station
Base Station
Base station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base station
Base Station
Base station
Base Station
Base station
Broadcast
Base Station
Base Station
Base Station
Base Station
Base station
Base Station
Base Station
94
NXP Semiconductors RF Manual 14th edition
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MRF6S19120H (2)
MRF6S19120H(2)
MRF6S19140H (2)
MRF6S19140H(2)
Freescale
Freescale
Freescale
Freescale
Base station
Base Station
Base station
Base Station
MRF6S19200H (2)
Freescale
MRF6S20010
MRF6S20010
MRF6S20010N (2)
MRF6S20010N(2)
MRF6S20010N(2)
MRF6S21050L(2)
MRF6S21060N (2)
MRF6S21060N(2)
MRF6S21100H (2)
MRF6S21100H(2)
MRF6S21100N (2)
MRF6S21100N(2)
MRF6S21140H (2)
MRF6S21140H(2)
MRF6S21190H
MRF6S21190H
MRF6S21190H (2)
MRF6S23100H (2)
MRF6S23100H (2)
MRF6S27015N
MRF6S27015N (2)
MRF6S27015N (2)
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27085H
MRF6S27085H (2)
MRF6S27085HR3
MRF6S27085HS
MRF6S27085HSR3
MRF6V2010N (2)
MRF6V2010N(2)
MRF6V2010NBR1(18a)
MRF6V2010NR1(18a)
MRF6V2150N (2)
MRF6V2150N(2)
MRF6V2150NBR1(18a)
MRF6V2150NR1(18a)
MRF6V2300N (2)
MRF6V2300N(2)
MRF6V2300N(2)
MRF6V4300N (2)
MRF6VP11KH (1)
MRF6VP21KH (1)
MRF6VP2600H (1)
MRF6VP2600HR6(18o)
MRF6VP3450
MRF6VP3450H (4)
MRF6VP41KH (2)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
MRF7S15100H (2)
Freescale
MRF7S18125AHS
MRF7S18170H (2)
MRF7S18170H(2)
MRF7S19080H (2)
MRF7S19080H(2)
MRF7S19080HS
MRF7S19100
MRF7S19100N (2)
MRF7S19100N(2)
MRF7S19120N(1)
MRF7S19120NR1 (1)
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
MRF7S19170H (2)
Freescale
MRF7S19170H(2)
"MRF7S19210H
PTFA192401F"
MRF7S21080H (2)
MRF7S21110H (2)
MRF7S21110HS
MRF7S21150H (2)
Freescale
BLF7G20L(S)-140P
BLF6G20-110
BLF6G20LS-75
BLF6G20-140
BLF6G20-180PN,
BLF7G20L(S)-200
BLM6G22-30
BLM6G22-30G
BLM6G22-30
BLF6G21-6
BLF1822-10
BLF6G22-45
BLF6G22LS-75
BLF6G22-75
BLF6G22LS-100
BLF6G22-100
BLF6G22LS-100
BLF6G22-100
BLF6G22L(S)-130
BLF6G22-130
BLF6G22-180P
BLF6G22-180PN
BLF7G22L(S)-200
BLF7G27L(S)-75P
BLF7G27L(S)-75P
BLF6G27-10
BLF6G27-10(G)
BLF6G27-10(G)
BLF6G27-45
BLF6G27S-45
BLF6G27LS-135
BLF7G27L(S)-140
BLF6G27-135
BLF6G27LS-75
BLF6G27LS-135
BLF571
BLF244
BLF872
BLF871
BLF871
BLF177
BLF882
BLF881
BLF573S
BLF369
BLF378
BLF573S
BLF578
BLF578
BLF871
BLF881
BLF878
BLF878
BLF578
BLF6G15L(S)-40BRN/
BLF6G15L(S)-250PBRN
BLF6G20LS-140
BLF7G20L(S)-200
BLF6G22-180
BLF6G20(LS)-110
BLF6G20-110
BLF6G20LS-75
BLF6G20LS-110
BLF6G20LS-75
BLF6G20-110
BLF6G20-110
BLF6G20LS-140
BLF6G20-180PN,
BLF7G20L(S)-200
BLF6G20-180
Freescale
Freescale
Freescale
Freescale
Freescale
BLF6G20-230PRN
BLF6G22LS-100
BLF6G22L(S)-130
BLF6G22LS-100
BLF7G22LS-130
MRF7S21170
MRF7S21170H (2)
MRF7S21210H (2)
MRF7S27130H (2)
MRF7S38010H
MRF7S38010H (2)
MRF7S38040H
MRF7S38040H (2)
MRF7S38040HR3
MRF7S38040HSR3
MRF8S18120H (2)
MRF9030L (2)
MRF9030N (2)
MRF9135L (2)
MRF917
MRF9200L (2)
MRF9210R3 (1)
MRF927
MRF9411L
MRF947
MRF947A
MRF9511L
MRF957
MRFE6P3300H
MRFE6S9125N
MRFE6S9125N (2)
MRFE6S9130H (2)
MRFE6S9135H (2)
MRFE6S9135HS
MRFE6S9160H (2)
MRFE6S9201H (2)
MRFE6S9205HS
MS1003
MS1004
MS1007
MS1008
MS1011
MS1051
MS1076
MS1078
MS1079
MS1204
MS1277
MS1278
MS1279
MS1280
MS1329
MS1453
MS1503
MS1506
MS1507
MS1509
MS1511
MS1533
MS2001
MS2003
MS2003
MS2005
MS2010
MS2176
MS2200
MS2207
MS2210
MS2215
MS2267
MS2321
MS24221
MS2441
MS2472
MS2473
MS2553
MS2575
MS3024
MSC1015MP
MSC1175M
MSC1400M
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
BLF6G22LS-100
BLF6G22-180PN
BLF7G22L(S)-250P
BLF7G27L(S)-140
BLF6G38-10G
BLF6G38(S)-25
BLF6G38LS-50
BLF6G38(LS)-50
BLF6G28-50
BLF6G28LS-51
BLF7G20L(S)-250P
BLF6G10(LS)-160RN
BLF6G10(LS)-160RN
BLF6G10(LS)-135RN
BFQ67W
BLF6G10L(S)-260PRN
BLF6G10L(S)-260PRN
BFS25A
BFG520/X
BFS520
PRF947
BFG540/X
PRF957
BLF878
BLF6G10LS-135R
BLF6G10(LS)-135RN
BLF6G10(LS)-135RN
BLF6G10(LS)-200RN
BLF6G10LS-135R
BLF6G10(LS)-160RN
BLF6G10(LS)-200RN
BLF6G10LS-200RN
BLF645
BLF888
BLF871
BLF871
BLF888
BLF871
BLF888
BLF871
BLF888
BLF645
BLF888
BLF888
BLF888
BLF888
BLF878
BLF881
BLF871
BLF881
BLF881
BLF871
BLF878
BLF645
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF6G22-45
BLF878
BLA6H0912-500
BLA6H0912-500
BLA6G1011-200R
BLF177
BLA6G1011-200R
BLL6H0514-25
BLA6G1011-200R
BLAH0912-500
BLAH0912-500
BLA6H1011-600
BLL6H0514-25
BLL6H0514-25
BLF6G22-45
BLL6H0514-25
BLA6G1011-200R
BLAH0912-500
Base Station
Base station
Base station
Base station
Base Station
Base station
Base Station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 1-4
Base station
Base station
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Broadcast
Base Station
Base station
Base station
Base station
Base Station
Base station
Base station
Base Station
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Microwave
Microwave
Microwave
Base station
Base Station
Base Station
Base station
Base Station
Base Station
Base Station
Base station
Base Station
Base station
Base Station
Base station
Base Station
Base station
Base Station
Base Station
Base Station
Base station
Base station
Base station
Base Station
Base station
Base station
Base station
Base station
Base Station
Base station
Base station
Base Station
Base station
Base station
Broadcast
Broadcast
Broadcast
Base station
Broadcast
Broadcast
Broadcast
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base Station
Base station
Base Station
Base station
Base Station
Base Station
Base Station
Base station
Base Station
Base Station
Base station
Base station
Base Station
Base Station
Base station
Base station
Base Station
Base station
NXP Semiconductors RF Manual 14th edition
95
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
MSC1450M
MT4S200T
MT4S200U
MT4S34U
MV2109G
MW6IC2240N (2)
MW6S004NT1 (1)
MW7IC2725GNR1
MW7IC2725N
MW7IC2725N
MW7IC2725NB
MW7IC2725NR1
MW7IC2750GNR1
MW7IC2750N (3)
MW7IC2750NR1
MW7IC3825GN
MW7IC3825N
MW7IC3825N (3)
MW7IC3825NB
MW7IC915N (1)
NESG3032M14
NESG3032M14
PD55012-E
PD55025-E
PD55035-E
PD57018-E
PD57030-E
PD57045-E
PD57060-E
PD57070-E
PD85015-E
PD85025C
PD85025-E
PD85035C
PD85035-E
PRF134
PRF134
PRF136
PRF136
PRF947B
PRF947B
PTF 180101S - 10 W
PTF 191601E - 160 W
PTF 210101M - 10 W
PTF 210451E - 45 W
PTF 210451F - 45 W
PTF 240101S - 10 W
PTF041501E-150W
PTF041501E-150W
PTF041501F-150W
PTF041501F-150W
PTF080101M-10W
PTF080101M-10W
PTF080101S-10W
PTF080101S-10W
PTF081301E-130W
PTF081301E-130W
PTF081301F-130W
PTF081301F-130W
PTF082001E-200W
PTF082001E-200W
PTF180101
PTF180101
PTFA 142401EL - 240 W
PTFA 142401FL - 240 W
PTFA 180701E - 70 W
PTFA 180701F - 70 W
PTFA 181001E - 100 W
PTFA 181001F - 100 W
PTFA 181001GL - 100 W
PTFA 191001E - 100 W
PTFA 191001F - 100 W
PTFA 192001E - 200 W
PTFA 192001F - 200 W
PTFA 192401E - 240 W
PTFA 192401F - 240 W
Microsemi
Toshiba
Toshiba
Toshiba
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Infineon
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
NEC
Infineon
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
ST
POLYFET
Infineon
POLYFET
Infineon
Motorola
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Freescale
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
BLA6H0912-500
BFG424W
BFG425W
BFG410W
BB182LX
BLF6G22LS-75
BLF6G21-10G
BLF6G27-10G
BLF6G27-10G
BLF6G27-10G
BLF6G27-10
BLF6G27-10
BLF6G27LS-75
BLF6G27(LS)-75
BLF6G27-75
BLF6G38S-25
BLF6G38-25
BLF6G38(S)-25
BLF6G38-25
BLF6G10L(S)-260PRN
BFU725F
BFU725F
BLF571
BLF571
BLF571
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLL6H0514-25
BLF571
BLF571
BLF571
BLF571
BLF571
BLF242
BLF242
BLF244
BLF244
PRF947
PRF947
BLF6G20-40
BLF7G20L(S)-300P
BLD6G22L(S)-50
BLF7G22L(S)-200
BLF7G22L(S)-200
BLF7G27L(S)-100
BLF647
BLF647
BLF647
BLF647
BLF1043
BLF1043
BLF1043
BLF1043
BLF4G10-120
BLF4G10-120
BLF4G10-120
BLF4G10-120
BLF6G10-200
BLF6G10-200
BLF6G21-10G
BLF6G21-10G
BLF6G15L(S)-250PBRN
BLF6G15L(S)-250PBRN
BLF6G20(LS)-110
BLF6G20(LS)-110
BLF6G20(LS)-180RN
BLF6G20(LS)-180RN
BLF6G20(LS)-180RN
BLF6G20(LS)-110
BLF6G20(LS)-110
BLF6G20-180PN
BLF6G20-180PN
BLF6G20-180PN
BLF6G20-180PN
Microwave
WB trs 5-7
WB trs 5-7
WB trs 5-7
Varicap
Base station
Base station
Base station
Base Station
Base Station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 5-7
WB trs 5-7
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Microwave
Microwave
Microwave
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
WB trs 1-4
WB trs 1-4
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Broadcast
Broadcast
Broadcast
Broadcast
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
PTFA 210301E - 30 W
PTFA 210701E - 70 W
PTFA 210701F - 70 W
PTFA 211001E - 100 W
PTFA 211801E - 180 W
PTFA 211801F - 180 W
PTFA 212001E - 200 W
PTFA 212001F - 200 W
PTFA 212002E - 200 W
PTFA 212401E - 240 W
PTFA 212401F - 240 W
PTFA 240451E - 45 W
PTFA 260451E - 45 W
PTFA 260851E - 85 W
PTFA 260851F - 85 W
PTFA 261301E - 130 W
PTFA 261301F - 130 W
PTFA 261702E - 170 W
PTFA043002E-300W
PTFA043002E-300W
PTFA080551E-55W
PTFA080551F-55W
PTFA081501E-150W
PTFA081501F-150W
PTFA091201E-120W
PTFA091201F-120W
PTMA 210452EL - 45 W
PTMA 210452FL - 45 W
PZFJ108
PZFJ109
PZFJ110
R0605250L
R0605300L
R2005240
RN142G
RN142S
RN242CS
RN731V
RN739D
RN739F
S505T
S505TR
S505TRW
S5540220
S595T
S595TR
S595TRW
S7540185
S7540215
S8740190
S8740220
S8740230
S949T
S949TR
S949TRW
S974T
S974T-GS08
S974TR
S974TR-GS08
S974TRW
S974TRW-GS08
SA701
SA701
SA741
SD1018
SD1018-06
SD1019-05
SD1422
SD1485
SD56120
SD56120M
SD57030
SD57030-01
SD57120
SD702
SDV701Q
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Standard
Standard
Standard
Standard
Standard
Standard
Rohm
Rohm
Rohm
Rohm
Rohm
Rohm
Vishay
Vishay
Vishay
Standard
Vishay
Vishay
Vishay
Standard
Standard
Standard
Standard
Standard
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
POLYFET
POLYFET
POLYFET
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
ST
ST
ST
ST
ST
POLYFET
AUK
BLD6G22L(S)-50
BLF6G22LS-75
BLF6G22LS-75
BLF6G22LS-100
BLF7G22L(S)-250P
BLF7G22L(S)-250P
BLF6G22-180PN
BLF6G22-180PN
BLF7G22LS-130
BLF6G22-180PN
BLF6G22-180PN
BLF7G27L(S)-100
BLF6G27(LS)-75
BLF6G27L(S)-45BN
BLF6G27(LS)-135
BLF7G27L(S)-200P
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF878
BLF878
BLF6G10-45
BLF6G10-45
BLF6G10-160
BLF6G10-160
BLF4G10-120
BLF4G10-120
BLF6G22(S)-45
BLF6G22(S)-45
J108
J109
J110
BGY66B
BGY68
BGY67A
BAP1321-03
BAP1321-02
BAP51LX
BAP50-03
BAP50-04
BAP50-04W
BF1101
BF1101R
BF1101WR
BGY587
BF1105
BF1105R
BF1105WR
BGY785A
BGY787
BGD812
BGD814
BGD816L
BF1109
BF1109R
BF1109WR
BF1109
BF1109
BF1109R
BF1109R
BF1109WR
BF1109WR
BLF145
BLF245
BLF175
BLF881
BLF881
BLF645
BLF871
BLF888
BLF871
BLF881
BLL6H0514-25
BLL6H0514-25
BLF578
BLF246B
BB179
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Broadcast
Broadcast
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
Base Station
FET
FET
FET
CATV RA
CATV RA
CATV RA
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
FET
FET
CATV PPA
FET
FET
FET
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
FET
FET
FET
FET
FET
FET
FET
FET
FET
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Microwave
Microwave
Broadcast
Broadcast
Varicap
96
NXP Semiconductors RF Manual 14th edition
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
SDV704Q
SDV705Q
SE701
SGA8343Z
SK701
SK701
SK702
SM341
SM704
SM704
SMP1302-004
SMP1302-005
SMP1302-011
SMP1302-074
SMP1302-075
SMP1302-079
SMP1304-001
SMP1304-011
SMP1307-001
SMP1307-011
SMP1320-004
SMP1320-011
SMP1320-074
SMP1321-001
SMP1321-005
SMP1321-011
SMP1321-075
SMP1321-079
SMP1322-004
SMP1322-011
SMP1322-074
SMP1322-079
SMP1340-011
SMP1340-079
SMP1352-011
SMP1352-079
SMV1235-004
SMV1236-004
SR341
SR341
SR401
SR401
SR401
SR703
SR704U
SST111
SST112
SST113
SST174
SST175
SST176
SST177
SST201
SST202
SST203
SST308
SST309
SST310
SST4391
SST4392
SST4393
SST4856
SST4857
SST4859
SST4860
SST4861
AUK
AUK
POLYFET
Sirenza
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
POLYFET
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
BB178
BB182
BLF245B
BFG425W
BLF544B
BLF545
BLF546
BLF177
BLF147
BLF246
BAP50-05
BAP50-04
BAP50-03
BAP50-05W
BAP50-04W
BAP50-02
BAP70-03
BAP70-03
BAP70-03
BAP70-03
BAP65-05
BAP65-03
BAP65-05W
BAP1321-03
BAP1321-04
BAP1321-03
BAP1321-04
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB181
BB156
BLF378
BLF278
BLF248
BLF348
BLF368
BLF547
BLF548
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BFT46
BFR31
BFR30
PMBFJ308
PMBFJ309
PMBFJ310
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR56
BSR57
BSR58
Varicap
Varicap
Broadcast
WB trs 5-7
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
ST704
ST744
ST744
SVC201SPA
TAN150
TAN250A
TAN300
TBB1016
TCS450
TCS800
TMF3201J
TMF3202Z
TMPF4091
TMPF4092
TMPF4093
TMPF4391
TMPF4392
TMPF4393
TMPFB246A
TMPFB246B
TMPFB246C
TMPFJ111
TMPFJ112
TMPFJ113
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TPR400
TPR500
TPR500A
TSDF54040
TSDF54040-GS08
TSDF54040X-GS08
TSDF54040XR-GS08
UF2805B
UF28100H
UF28100M
UF28100V
UF2810P
UF28150J
UF2815B
UF2820P
UF2820R
UF2840G
UF2840P
UMIL100
UMIL100A
UMIL60
UMIL80
uPC2709
uPC2711
uPC2712
uPC2745
uPC2746
uPC2748
uPC2771
uPC8112
UTV200
UTV8100B
VAM80
VMIL100
VRF148A
VRF150
VRF151
VRF151G
POLYFET
POLYFET
POLYFET
Sanyo
Microsemi
Microsemi
Microsemi
Renesas
Microsemi
Microsemi
AUK
AUK
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Microsemi
Microsemi
Microsemi
Vishay
Vishay
Vishay
Vishay
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
M/A- COM
Microsemi
Microsemi
Microsemi
Microsemi
NEC
NEC
NEC
NEC
NEC
NEC
NEC
NEC
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
BLF346
BLF276
BLF277
BB187
BLF177
BLA6G1011-200R
BLA6G1011-200R
BF1204
BLA6H0912-500
BLA6H1011-600
BF1204
BF1202WR
PMBF4391
PMBF4392
PMBF4393
PMBF4391
PMBF4392
PMBF4393
BSR56
BSR57
BSR58
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BLAH0912-500
BLA6H0912-501
BLA6H0912-502
BF1102
BF1102
BF1102
BF1102R
BLF871
BLF871
BLF871
BLF871
BLF871
BLF881
BLF871
BLF871
BLF871
BLF881
BLF881
BLF871
BLF871
BLF878
BLF878
BGA2709
BGA2711
BGA2712
BGA2001
BGA2001
BGA2748
BGA2771
BGA2022
BLF571
BLF645
BLF878
BLF645
BLF881
BLF177
BLF177
BLF878
Broadcast
Broadcast
Broadcast
Varicap
Broadcast
Microwave
Microwave
FET
Microwave
Microwave
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
Microwave
Microwave
Microwave
FET
FET
FET
FET
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
NXP Semiconductors RF Manual 14th edition
97
5.2
Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type
Abbreviations:
BS diode Band Switch Diode
CATV Community Antenna Television System
FET Field Effect Transistor
Varicap Varicap Diode
WB trs Wideband Transistor
OM Optical Module
NXP discontinued type
Product family NXP
Replacement type NXP
NXP discontinued type
Product family NXP
Replacement type NXP
BA277-01
BA792
BAP142L
BAP51-01
BAP51L
BAP55L
BB132
BB145
BB145B-01
BB151
BB157
BB178L
BB179BL
BB179L
BB181L
BB182B
BB182L
BB187L
BB190
BB202L
BB804
BBY42
BF1203
BF689K
BF763
BF851A
BF851A
BF851C
BF851C
BF992/01
BFC505
BFC520
BFET505
BFET520
BFG17A
BFG197
BFG197/X
BFG25AW/XR
BFG410W/CA
BFG425W/CA
BFG425W/CA
BFG505/XR
BFG505W/XR
BFG520W/XR
BFG590/XR
BFG590W
BFG590W/XR
BFG67/XR
BFG92A
BFG92A/XR
BFG93A/XR
BFQ34/01
BFR92
BFR92AR
BFR92AT
BFR93
BFR93AT
BS diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
WB trs
WB trs
FET
FET
FET
FET
FET
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
BA277
BA591
BAP142LX
BAP51LX
BAP51LX
BAP55LX
BB152
BB145B
BB145B
BB135
BB187
BB178LX
BB179BLX
BB179LX
BB181LX
BB182
BB182LX
BB187LX
BB149
BB202LX
BB207
BBY40
BF1203
BFS17
BFS17
BF861A
BF861A
BF861C
BF861C
BF992
BFM505
BFM520
BFM505
BFM520
BFS17A
BFG198
BFG198
BFG25AW/X
BFG410W
BFG425W
BFG425W
BFG505/X
BFG505
BFG520W/X
BFG590/X
BFG590
BFG590
BFG67
BFG92A/X
BFG92A/X
BFG93A/X
BFG35
BFR92A
BFR92A
BFR92AW
BFR92A
BFR93AW
BFR93R
BFU510
BFU540
BGA2031
BGD102/02
BGD102/04
BGD104
BGD104/04
BGD502/01
BGD502/01
BGD502/01
BGD502/01
BGD502/03
BGD502/03
BGD502/05
BGD502/07
BGD502/6M
BGD502/C7
BGD502/R
BGD504
BGD504/01
BGD504/02
BGD504/09
BGD602
BGD602/02
BGD602/07
BGD602/09
BGD602/14
BGD602D
BGD702D
BGD702D/08
BGD704/01
BGD704/07S
BGD704/S9
BGD704N
BGD802/09
BGD802N
BGD802N
BGD802N/07
BGD802N/07
BGD804N
BGD804N
BGD804N/02
BGD804N/02
BGD902
BGD902/07
BGD902L
BGD904
BGD904/02
BGD904/07
BGD904L
BGD906
BGD906/02
BGE847BO
BGE847BO
BGE847BO
BGE847BO/FC
WB trs
WB trs
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
BFR93A
BFU725F/N1
BFU725F/N1
BGA2031/1
BGD502
BGD502
BGD704
BGD704
BGD502
BGD502
BGD502
BGD502
BGD502
BGD502
BGD502
BGD502
BGD702
BGD502
BGD502
BGD704
BGD704
BGD704
BGD704
BGD702
BGD702
BGD702
BGD702
BGD702
BGD712
BGD712
BGD712
BGD704
BGD704
BGD704
BGD714
BGD802
BGD812
BGD812
BGD812
BGD812
BGD814
BGD814
BGD814
BGD814
BGD812
BGD902
BGD812
BGD814
BGD904
BGD904
BGD814
CGD942C
BGD906
BGO827
BGO827
BGO827
BGO827/SC0
98
NXP Semiconductors RF Manual 14th edition
NXP discontinued type
Product family NXP
Replacement type NXP
NXP discontinued type
Product family NXP
Replacement type NXP
BGE847BO/FC0
BGE847BO/FC0
BGE847BO/FC1
BGE847BO/SC
BGE847BO/SC0
BGE847BO/SC0
BGE887BO
BGE887BO/FC
BGE887BO/FC1
BGE887BO/SC
BGO847/01
BGO847/01
BGO847/FC0
BGO847/FC0
BGO847/FC01
BGO847/FC01
BGO847/SC0
BGQ34/01
BGU2003
BGX885/02
BGY1085A/07
BGY584A
BGY585A/01
BGY586
BGY586/05
BGY587/01
BGY587/01
BGY587/02
BGY587/02
BGY587/07
BGY587/09
BGY587B/01
BGY587B/02
BGY587B/09
BGY588
BGY588/04
BGY66B/04
BGY67/04
BGY67/09
BGY67/14
BGY67/19
BGY67A/04
BGY67A/14
BGY68/01
BGY685A/07
BGY685AD
BGY685AD
BGY685AL
BGY687/07
BGY687/14
BGY687B
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
WB
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO847
BGO847
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BFG35
BGA2003
BGX885N
BGY1085A
BGY585A
BGY585A
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587
BGY587B
BGY587B
BGY587B
BGY588N
BGY588N
BGY66B
BGY67
BGY67
BGY67
BGY67
BGY67A
BGY67A
BGY68
BGY685A
BGY785A
BGY785A
BGY785A
BGY687
BGY687
BGE787B
BGY687B/02
BGY785A/07
BGY785A/09
BGY785AD
BGY785AD/06
BGY785AD/8M
BGY785AD/8M
BGY787/02
BGY787/07
BGY787/09
BGY847BO
BGY847BO/SC
BGY84A
BGY84A/04
BGY84A/05
BGY85
BGY85A
BGY85A/04
BGY85A/05
BGY85H/01
BGY86
BGY86/05
BGY87
BGY87/J1
BGY87B
BGY88
BGY88/04
BGY88/04
BGY88/07
BGY887/02
BGY887BO
BGY887BO/FC
BGY887BO/SC
CGD914
CGY887A
CGY887B
GD923
ON4520/09
ON4520/2
ON4594/M5
ON4749
ON4749
ON4831-2
ON4869
ON4876
ON4890
ON4890
ON4990
PMBT3640/AT
PN4392
PN4393
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
WB trs
FET
FET
BGE787B
BGY785A
BGY785A
BGY785A
BGY785A
BGY885A
BGY885A
BGY787
BGY787
BGY787
BGO827
BGO827/SC0
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY585A
BGY587
BGY587
BGY587
BGY587
BGY587B
BGY588N
BGY588N
BGY588N
BGY588N
BGY887
BGO827
BGO827/FC0
BGO827/SC0
CGD1042H
CGY1043
CGY1047
CGD942C
BGY687
BGY687
BGY585A
BGY588N
BGY588N
BGY885A
BGY587
BGY1085A
BGD712
BGD712
BGD885
BFS17
PMBF4392
PMBF4393
NXP Semiconductors RF Manual 14th edition
99
6. Packing and packaging information
6.1
100
Packing quantities per package with relevant ordering code
Package
Package dimensions
LxWxH
Packing
quantity
Product
12NC ending
Packing
method
SOD323/SC-76
1.7 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOD523/SC-79
1.2 x 0.8 x 0.6
3,000
10,000
8,000
20,000
115
135
315
335
8 mm tape and reel
8 mm tape and reel
2 mm pitch tape and reel
2 mm pitch tape and reel
SOD882T
1.0 x 0.6 x 0.4
15,000
315
8 mm tape and reel
SOT23
2.9 x 1.3 x 0.9
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT54
4.6 x 3.9 x 5.1
5,000
5,000
10,000
10,000
112
412
116
126
bulk, delta pinning
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
SOT89/SC-62
4.5 x 2.5 x 1.5
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT115
44.5 x 13.65 x 20.4
100
112
4 tray/box
SOT121B
28.45 x 28.45 x 7.27
20
112
blister, tray
SOT143(N/R)
2.9 x 1.3 x 0.9
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT223/SC-73
6.7 x 3.5 x 1.6
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT307
10 x 10 x 1.75
1,500
96
480
518
551
557
13" tape and reel dry pack
1 tray dry pack
5 tray dry pack
SOT323/SC-70
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT341
5.3 x 10.2
1,000
658
118
112
13'' tape and reel
tube
SOT343(N/R)
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT343F
2.1 x 1.25 x 0.7
3,000
115
8 mm tape and reel
SOT360
6.5 x 4.4 x 0.9
2,500
118
16 mm tape and reel
SOT363/SC-88
2.0 x 1.25 x 0.9
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT401
5 x 5 x 1.4
2,000
360
118
151
13" tape and reel
1 tray
SOT403
5.0 x 4.4 x 0.9
2,500
118
12 mm tape and reel
SOT416/SC-75
1.6 x 0.8 x 0.75
3,000
115
8 mm tape and reel
SOT467B
9.78 x 18.29 x 4.67
60
20
112
112
blister, tray
blister, tray
SOT467C
20.45 x 18.54 x 4.67
60
20
112
112
blister, tray
blister, tray
SOT502A
19.8 x 9.4 x 4.1
60
300
112
135
blister, tray
reel
SOT502B
19.8 x 9.4 x 4.1
60
100
112
118
blister, tray
reel
NXP Semiconductors RF Manual 14th edition
Package
Package dimensions
LxWxH
Packing
quantity
Product
12NC ending
Packing
method
SOT538A
5.1 x 4.1 x 2.6
160
112
blister, tray
SOT539A
31.25 x 9.4 x 4.65
60
300
112
135
blister, tray
reel
SOT540A
21.85 x 10.2 x 5.4
60
112
blister, tray
SOT608A
10.1 x 10.1 x 4.2
60
60
300
112
112
135
blister, tray
blister, tray
reel
SOT608B
10.1 x 10.1 x 4.2
60
100
300
112
118
135
blister, tray
reel
reel
SOT616
4.0 x 4.0 x 0.85
6,000
1,500
100
118
115
551
12 mm tape and reel
8 mm tape and reel
tray
SOT617
5 x 5 x 0.85
6,000
118
Tape and reel
SOT618
6 x 6 x 0.85
4,000
1,000
490
2,450
118
515
551
157
13" tape and reel
7" tape and reel dry pack
1 tray dry pack
5 tray
SOT638
14 x 14 x 1
1,000
90
450
518
551
557
13" tape and reel dry pack
1 tray dry pack
5 tray dry pack
SOT666
1.6 x 1.2 x 0.7
4,000
115
8 mm tape and reel
SOT684
8 x 8 x 0.85
1,000
260
260
1,300
518
151
551
157
13" tape and reel dry pack
1 tray
1 tray dry pack
5 tray dry pack
SOT724
8.7 x 3.9 x 1.47
2,500
118
16 mm tape and reel
SOT753
2.9 x 1.5 x 1.0
3,000
125
8 mm tape and reel
SOT778
6.0 x 6.0 x 0.85
490
4,000
551
518
tray
multiple trays
SOT822-1
15.9 x 11 x 3.6
180
127
tube
SOT834-1
15.9 x 11 x 3.15
180
127
tube
SOT886
1.45 x 1.0 x 0.5
5000
115
8 mm tape and reel
SOT891
1.0 x 1.0 x 0.5
5000
132
8 mm tape and reel
SOT908
3.0 x 3.0 x 0.85
6000
118
12 mm tape and reel
SOT922-1
17.4 x 9.4 x 3.88
60
112
blister, tray
SOT975B
6.5 x 6.5 x 3.3
180
100
112
118
blister, tray
Tape and reel
SOT975C
6.5 x 6.5 x 3.3
180
100
112
118
blister, tray
Tape and reel
SOT979A
31.25 x 10.2 x 5.3
60
112
blister, tray
SOT1110A
41.28 x 17.12 x 5.36
60
100
112
118
blister, tray
reel
SOT1121A
34.16 x 19.94 x 4.75
60
100
112
118
blister, tray
reel
SOT1121B
20.70 x 19.94 x 4.75
60
100
112
118
blister,tray
reel
SOT1130A
20.45 x 17.12 x 4.65
60
112
blister, tray
SOT1130B
9.91 x 17.12 x 4.65
60
112
blister, tray
SOT1135A
20.45 x 19.94 x 4.65
60
100
112
118
blister, tray
reel
NXP Semiconductors RF Manual 14th edition
101
6.2
Marking codes list
Search online on marking code: http://www.nxp.com/package/
In alphabetical order of marking code
In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites.
Instead of a ‘%’, you will find:
p = made in Hong-Kong
t = made in Malaysia
W = made in China
Marking code
10%
13%
20%
21%
22%
24%
25%
26%
28%
29%
30%
31%
32%
33%
34%
38%
39%
40%
41%
42%
47%
48%
49%
50%
1
2
7
8
9
%1W
%3A
%4A
%5A
%6G
%6J
%6K
%6K
%6L
%6S
%6W
%6X
%6Y
%AB
%E7
%E8
%E9
%EA
%EB
%EC
%ED
%M1
%M2
%M3
%M4
%M5
%M6
102
Type
BAT18
BB207
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BFR505
BFR520
BFR540
BFT25A
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ308
PMBFJ309
PMBFJ310
BA277
BB182
BA891
BB178
BB179
BAP51-05W
BGA6289
BGA6489
BGA6589
PMBF4393
PMBF4391
BGA7024
PMBF4392
BGA7027
PMBFJ176
PMBFJ175
PMBFJ174
PMBFJ177
BF1210
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BF908
BF908R
BF909
BF909R
BF909A
BF909AR
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOD523
SOD523
SOD523
SOD523
SOD523
SOT323
SOT89
SOT89
SOT89
SOT23
SOT23
SOT89
SOT23
SOT89
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
NXP Semiconductors RF Manual 14th edition
Marking code
%M7
%M8
%M9
%MA
%MB
%MC
%MD
%ME
%MF
%MG
%MH
%MK
%ML
%MM
%MN
%MP
%MR
%MS
%MT
%MU
%MV
%MW
%MX
%MY
%MZ
1B%
1C%
1N%
2A%
2L
2N
2R
4A
4K%
4L%
4W%
5K%
5W%
6F%
6K%
6W%
7K%
8K%
A1
A1
A1
A1
A2
A2
A2
A2
A2%
A3
A3
A3
A3%
Type
BF904A
BF904AR
BSS83
BF991
BF992
BF904
BF904R
BFG505
BFG520
BFG540
BFG590
BFG505/X
BFG520/X
BFG540/X
BFG590/X
BFG520/XR
BFG540/XR
BFG10
BFG10/X
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BF1100
BF1100R
BGA2717
BAP50-05
BAP70-04W
BF862
BF1208
BF1206F
BF1207F
BF1208D
BAP64-04
BAP50-04
BAP64-04W
BAP64-05
BAP64-05W
BAP1321-04
BAP64-06
BAP50-04W
BAP65-05
BAP70-05
BA591
BB208-02
BGA2001
BAP64Q
BAP70Q
BAT18
BB184
BB208-03
BGA2022
BAP64-03
BB198
BGA2003
BGA2031/1
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT23
SOT323
SOT23
SOT666
SOT666
SOT666
SOT666
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT23
SOD323
SOD523
SOT343
SOT753
SOT753
SOT23
SOD523
SOD323
SOT363
SOD323
SOD523
SOT343
SOT363
Marking code
A5
A5%
A6%
A7%
A8
A8%
A8%
A9
AC
B3
B6B6%
B7%
BC%
BFG135
BFG198
BFG31
BFG35
BFG541
BFG591
BFG94
BFG97
BLT50
BLT70
BLT80
BLT81
C1%
C2%
C4%
C5%
D1
D2
D2
D3
D3
D4
D4%
D5
D6
D7
D8
E1%
E1%
E1%
E2%
E2%
E3%
E6%
FB
FF
FG
G2
G2%
G3%
G4%
G5%
Type
BAP51-03
BGA2011
BGA2012
BFG310W/XR
BAP50-03
BFG325W/XR
PMBFJ620
BAP70-03
BGU7005
BGU7003
BGA2715
BFU725F
BGA2716
BFQ591
BFG135
BFG198
BFG31
BFG35
BFG541
BFG591
BFG94
BFG97
BLT50
BLT70
BLT80
BLT81
BGM1011
BGM1012
BGM1013
BGM1014
BFU610F
BFU630F
BAP63-03
BFU660F
BAP65-03
BFU690F
BFR30/B
BFU710F
BFU730F
BFU760F
BFU790F
BFS17
BFS17/FD
BFS17W
BFS17A
BGA2712
BGA2709
BFG17A
BFQ19
BFQ18A
BFQ149
BA278
BGA2711
BGA2748
BGA2771
BGA2776
Package
SOD323
SOT363
SOT363
SOT343
SOD323
SOT343
SOT363
SOD323
SOT886
SOT891
SOT363
SOT343F
SOT363
SOT89
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
SOT363
SOT363
SOT363
SOT363
SOT343F
SOT343F
SOD323
SOT343F
SOD323
SOT343F
SOT23
SOT343F
SOT343F
SOT343F
SOT343F
SOT23
SOT23
SOT323
SOT23
SOT363
SOT363
SOT23
SOT89
SOT89
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
Marking code
K1
K2
K4
K5
K6
K7
K8
K9
L1
L2
L2
L2%
L3
L3%
L4
L4%
L5
L6
L6%
L7
L8
L9%
LA
LA%
LB%
LD%
LE
LE%
LF%
LG%
LH%
LK%
M08
M09
M1%
M10
M2%
M2%
M3%
M33
M34
M35
M4%
M5%
M6%
M65
M66
M67
M7%
M84
M85
M86
MB
MC
MD
Type
BAP51-02
BAP51-05W
BAP50-02
BAP63-02
BAP65-02
BAP1321-02
BAP70-02
BB199
BB202LX
BAP51LX
BB202
BF1203
BB178LX
BF1204
BB179LX
BF1205
BB179BLX
BB181LX
BF1206
BB182LX
BB187LX
BF1208
BF1201WR
BF1201
BF1201R
BF1202
BF1202WR
BF1202R
BF1211
BF1212
BF1211R
BF1212R
PMBFJ308
PMBFJ309
BFR30
PMBFJ310
BF1207
BFR31
BFT46
BF861A
BF861B
BF861C
BF1215
BF1216
BF1205C
BF545A
BF545B
BF545C
BF1218
BF556A
BF556B
BF556C
BF998WR
BF904WR
BF908WR
Package
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD882T
SOD882T
SOD523
SOT363
SOD882T
SOT363
SOD882T
SOT363
SOD882T
SOD882T
SOT363
SOD882T
SOD882T
SOT363
SOT343
SOT143
SOT143
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT23
SOT23
SOT363
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT363
SOT23
SOT23
SOT23
SOT363
SOT23
SOT23
SOT23
SOT343
SOT343
SOT343
Marking code
ME
MF
MG
MG%
MH
MH%
MK
ML
MO%
MO%
N
N0
N0%
N0%
N1
N2
N2%
N2%
N3
N4
N4
N4%
N6%
N7
N8
N9
N9%
NA
NA%
NB
NB%
NC
NC%
ND
ND%
NE
NE%
NF%
NG%
NH%
P08
P09
P1
P1
P10
P11
P12
P13
P2%
P2%
P3
P4
P5
P5
P6
Type
BF909WR
BF1100WR
BF909AWR
BF994S
BF904AWR
BF996S
BF1211WR
BF1212WR
BF998
BF998R
BB181
BFR505T
BFM505
BFS505
BFG505W/X
BFR520T
BFM520
BFS520
BFG520W
BFG520W/X
BFQ540
BFS540
BFS25A
BFG540W/X
BFG540W/XR
BFG540W
BAP70AM
BF1105WR
BF1105R
BF1109WR
BF1109R
BF1101WR
BF1101R
BFG424W
BF1101
BFG424F
BF1105
BF1109
BF1108
BF1108R
PMBFJ108
PMBFJ109
BFG21W
BB131
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
BFR92A
BFR92AW
BFG403W
BFG410W
BB135
BFG425W
BFG480W
Package
SOT343
SOT343
SOT343
SOT143
SOT343
SOT143
SOT343
SOT343
SOT143
SOT143
SOD523
SOT416
SOT363
SOT323
SOT343
SOT416
SOT363
SOT323
SOT343
SOT343
SOT89
SOT323
SOT323
SOT343
SOT343
SOT343
SOT363
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT23
SOT23
SOT343
SOD323
SOT23
SOT23
SOT23
SOT23
SOT23
SOT323
SOT343
SOT343
SOD323
SOT343
SOT343
Marking code
P7
P8
P9
PB
PC
PE
PF
PL
R2%
R2%
R5
R7%
R8%
S
S1%
S2%
S2%
S3%
S6%
S7%
S8%
S9%
SB%
SC%
SC%
SD%
SE%
T5
V1
V1%
V10
V2%
V2%
V3%
V4%
V6%
V8
VA
VB
VC
VC%
VD%
W1
W1%
W1%
W2%
W4%
W6%
W7%
W9%
X
X1%
X1%
Type
BB147
BB148
BB149
BB152
BB153
BB155
BB156
BB149A
BFR93A
BFR93AW
BFR93AR
BFR106
BFG93A
BAP64-02
BFG310/XR
BBY40
BFG325/XR
BF1107
BF510
BF511
BF512
BF513
BF1214
BGU7031 BB201
BGU7032 BGU7033 BFG10W/X
BFG25AW/X
BFT25
BFT25A
BFQ67
BFQ67W
BFG67
BAP64-06W
BAP65-05W
BAP1321-03
BF1217WR BF1118W BF1118WR BF1118 BF1118R BF1102
BFT92
BFT92W
BF1102R
BAP50-05W
BAP51-04W
BAP51-06W
BAP63-05W
BB187
BFT93
BFT93W
Package
SOD523
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOT23
SOT323
SOT23
SOT23
SOT143
SOD523
SOT143
SOT23
SOT143
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT23
SOT363
SOT363
SOT343
SOT343
SOT23
SOT23
SOT23
SOT323
SOT143
SOT323
SOT323
SOD323
SOT343
SOT343
SOT343
SOT143
SOT143
SOT363
SOT23
SOT323
SOT363
SOT323
SOT323
SOT323
SOT323
SOD523
SOT23
SOT323
NXP Semiconductors RF Manual 14th edition
103
7. Abbreviations
3-way
AM
ASIC
ASYM
BPF
BUC
CATV
CDMA
CMMB
CMOS
CQS
DAB
DECT
DiSEqC
DSB
DVB
EDGE
ESD
FET
FM
GaAs
GaN
Gen
GPS
GSM
HBT
HDTV
HF
HFC
HFET
HPA
HVQFN
IF
ISM
LDMOS
LNA
LNB
LO
LPF
MESFET
MMIC
MMPP
104
Doherty design using 3 discrete transistors
Amplitude Modulation
Application Specific Integrated Circuit
Asymmetrical design of Doherty (main and
peak device are different)
Band Pass Filter
Block Up Converter
Community Antenna Television
Code Division Multiple Access
Chinese Multimedia Mobile Broadcasting
Complementary Metal Oxide Semiconductor
Customer Qualification Samples
Digital Audio Broadcasting
Digital Enhanced Cordless
Telecommunications
Digital Satellite Equipment Control
Digital Signal Processor
Digital Video Broadcasting
Enhanced Data Rates for GSM Evolution
Electro Static Device
Field Effect Transistor
Frequency Modulation
Gallium Arsenide
Gallium Nitride
Generation
Global Positioning System
Global System for Mobile communications
Heterojunction Bipolar Transistor
High Definition Television
High Frequency (3-30 MHz)
Hybrid Fiber Coax
Heterostructure Field Effect Transistor
High Power Amplifier
Plastic thermally enHanced Very thin Quad
Flat pack No leads
Intermediate Frequency
Industrial, Scientific, Medical - reserved
frequency bands
Laterally Diffused Metal-Oxide-Semiconductor
Low Noise Amplifier
Low Noise Block
Local Oscillator
Low Pass Filter
Metal Semiconductor Field Effect Transistor
Monolithic Microwave Integrated Circuit
Main and peak devices realized separately in
halves of push pull transistor
NXP Semiconductors RF Manual 14th edition
MPPM
Main and peak device realized in same push
pull transistor (2 times)
MoCA
Multimedia over Coax Alliance
MOSFET
Metal–Oxide–Semiconductor Field Effect
Transistor
MPA
Medium Power Amplifier
MRI
Magnetic resonance imaging
NF
Noise Figure
NIM
Network Interface Module
NMR
Nuclear magnetic resonance
PA
Power Amplifier
PAR
Peak to Average Ratio
PEP
Peak Envelope Power
pHEMT
pseudomorphic High Electron Mobility
Transistor
PLL
Phase Locked Loop
QUBiC
Quality BiCMOS
RF
Radio Frequency
RFS
Release for Supply
RoHS
Restriction of Hazardous Substances
RX
Receive
SARFT
State Administration for Radio, Film and
Television
SER
Serializer
SiGe:C
Sillicon Germanium Carbon
SMATV
Satellite Master Antenna Television
SMD
Surface Mounted Device
SPDT
Single Pole, Double Throw
SYM
Symmetrical design of Doherty (main and peak
device are the same type of transistor)
TD-SCDMA Time Division-Synchronous Code Division
Multiple Access
TCAS
Traffic Collision Avoidance Systems
TMA
Tower Mounted Amplifier
TTFF
Time to first fix
TX
Transmit
UHF
Ultra High Frequency (470-860MHz)
UMTS
Universal Mobile Telecommunications System
VCO
Voltage Controlled Oscillator
VGA
Variable Gain Amplifier
VHF
Very High Frequency (30-300MHz)
VoIP
Voice over Internet Protocol
VSAT
Very Small Aperture Terminal
WCDMA
Wideband Code Division Multiple Access
WiMAX
Worldwide Interoperability for Microwave
Access
WLAN
Wireless Local Area Network
8. Contacts and web links
How to contact your authorized distributor or local NXP representative?
Authorized distributors
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
North America:
http://www.nxp.com/profile/sales/northamerica_dist
South America:
http://www.nxp.com/profile/sales/southamerica_dist
Local NXP Offices
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
North America:
http://www.nxp.com/profile/sales/northamerica
South America:
http://www.nxp.com/profile/sales/southamerica
NXP RF MMICs:
http://www.nxp.com/mmics
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
NXP RF power & base stations:
http://www.nxp.com/rfpower
NXP RF FETs:
http://www.nxp.com/rffets
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
NXP RF applications:
http://www.nxp.com/rf
NXP application notes:
http://www.nxp.com/all_appnotes
NXP cross-references:
http://www.nxp.com/products/xref
NXP green packaging:
http://www.nxp.com/green_roadmap
NXP end-of-life:
http://www.nxp.com/products/eol
Web links
NXP Semiconductors:
http://www.nxp.com
NXP RF Manual web page:
http://www.nxp.com/rfmanual
NXP varicaps:
http://www.nxp.com/varicaps
NXP RF PIN diodes:
http://www.nxp.com/pindiodes
NXP RF Schottky diodes:
http://www.nxp.com/rfschottkydiodes
NXP Quality Handbook:
http://www.standardics.nxp.com/quality/handbook
NXP literature:
http://www.nxp.com/products/discretes/documentation
NXP packaging:
http://www.nxp.com/package
NXP sales offices and distributors:
http://www.nxp.com/profile/sales
NXP High Speed Converters
http://www.nxp.com/dataconverters
NXP Semiconductors RF Manual 14th edition
105
9. Product index
Portfolio
chapter
Type
ADC1006S series
ADC1010S series
ADC1015S series
ADC1113D125
ADC1115S125
ADC1206S series
ADC1207S080
ADC1210S series
ADC1212D series
ADC1213D series
ADC1215S series
ADC1410S series
ADC1412D series
ADC1413D series
ADC1415S series
ADC1610S series
ADC1613D series
BA277
BA591
BA792
BA891
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
BAP50-02
BAP50-03
BAP50-04
BAP50-04W
BAP50-05
BAP50-05W
BAP50LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
BAP51LX
BAP55LX
BAP63-02
BAP63-03
BAP63-05W
BAP63LX
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64LX
BAP64Q
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP65LX
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
BAP70Q
BAT17
BAT18
BB131
BB135
BB145B
BB148
106
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.8.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.4
3.2.3
3.2.1
3.2.1
3.2.1
3.2.1
Type
BB149
BB149A
BB152
BB153
BB156
BB178
BB178LX
BB179
BB179B
BB179BLX
BB179LX
BB181
BB181LX
BB182
BB182LX
BB184
BB184LX
BB185LX
BB187
BB187LX
BB189
BB198
BB199
BB201
BB202
BB202LX
BB207
BB208-02
BB208-03
BBY40
BF1100
BF1100R
BF1100WR
BF1101
BF1101R
BF1101WR
BF1102
BF1105
BF1105R
BF1105WR
BF1107
BF1108
BF1108R
BF1109
BF1109R
BF1109WR
BF1118
BF1118R
BF1118W
BF1118WR
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
BF1203
BF1204
BF1205
BF1205C
BF1206
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
NXP Semiconductors RF Manual 14th edition
Portfolio
chapter
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2.
3.5.2.
3.5.2.
3.5.2.
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
Type
BF1212WR
BF1214
BF1215
BF1216
BF1217
BF1218
BF245A
BF245B
BF245C
BF5101)
BF5111)
BF5121)
BF5131)
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BF862
BF904
BF904R
BF904WR
BF908
BF908R
BF908WR
BF909
BF909R
BF909WR
BF991
BF992
BF994S
BF996S
BF998
BF998R
BF998WR
BFG10(X)
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW/X
BFG31
BFG310/XR
BFG310W/XR
BFG325/XR
BFG325W/XR
BFG35
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505(/X)
BFG505W/X
BFG520(/X)
BFG520W(/X)
BFG540(/X)
BFG540W(/X/XR)
BFG541
BFG590(/X)
BFG591
BFG67(/X)
BFG92A(/X)
BFG93A(/X)
BFG94
Portfolio
chapter
3.5.2
3.5.2
3.5.2.
3.5.2.
3.5.2.
3.5.2.
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
Type
BFG97
BFM505
BFM520
BFQ149
BFQ18A
BFQ19
BFQ540
BFQ591
BFQ67
BFQ67W
BFR106
BFR30
BFR31
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFR92A
BFR92AW
BFR93A(R)
BFR93AW
BFS17
BFS17A
BFS17W
BFS25A
BFS505
BFS520
BFS540
BFT25
BFT25A
BFT46
BFT92
BFT92W
BFT93
BFT93W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGA2001
BGA2003
BGA2011
BGA2012
BGA2022
BGA2031/1
BGA2709
BGA2711
BGA2712
BGA2714
BGA2715
BGA2716
BGA2717
BGA2748
BGA2771
BGA2776
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGA6289
BGA6489
BGA6589
Portfolio
chapter
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
Type
BGA7024
BGA7027
BGA7030
BGA7033
BGA7124
BGA7127
BGA7202
BGA7203
BGA7204
BGA7350
BGA7351
BGD502
BGD702
BGD702N
BGD704
BGD712
BGD712C
BGD714
BGD802
BGD804
BGD812
BGD814
BGD816L
BGD885
BGE787B
BGE788
BGE788C
BGE885
BGM1011
BGM1012
BGM1013
BGM1014
BGO807
BGO807/FC0
BGO807/SC0
BGO807C
BGO807C/FC0
BGO807C/SC0
BGO807CE
BGO827
BGO827/SC0
BGU7003
BGU7005
BGU7006
BGU7007
BGU7031
BGU7032
BGU7033
BGY1085A
BGY585A
BGY587
BGY587B
BGY588C
BGY588N
BGY66B
BGY67
BGY67A
BGY68
BGY685A
BGY687
BGY785A
BGY787
BGY835C
BGY883
BGY885A
BGY887
BGY887B
BGY888
BLA6H0912-500
BLA6H1011-600
BLD6G21L-50
Portfolio
chapter
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.2
3.6.2
3.6.2
3.6.2
3.4.1
3.4.1
3.4.1
3.4.1
3.6.4
3.6.4
3.6.4
3.6.4
3.6.4
3.6.4
3.6.4
3.6.4
3.6.4
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.1
3.6.1
3.6.1
3.6.1
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.7.3
3.7.3
3.7.1
Type
BLD6G21LS-50
BLD6G22L-50
BLD6G22LS-50
BLF571
BLF573
BLF573
BLF573S
BLF574
BLF578
BLF645
BLF6G07L(S)-260PBM
BLF6G10-135RN
BLF6G10-160RN
BLF6G10-200RN
BLF6G10-45
BLF6G10L(S)-260PRN
BLF6G10L(S)-40BRN
BLF6G10LS-135RN
BLF6G10LS-160RN
BLF6G10LS-200RN
BLF6G10S-45
BLF6G20-110
BLF6G20-180PN
BLF6G20-180RN
BLF6G20-230PRN
BLF6G20-40
BLF6G20-45
BLF6G20-75
BLF6G20LS-110
BLF6G20LS-140
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-45
BLF6G21-10G
BLF6G22-180PN
BLF6G22-180RN
BLF6G22-45
BLF6G22LS-100
BLF6G22LS-130
BLF6G22LS-180RN
BLF6G22LS-75
BLF6G22S-45
BLF6G27-10
BLF6G27-10G
BLF6G27-135
BLF6G27-45
BLF6G27-75
BLF6G27L(S)-45BN
BLF6G27LS-135
BLF6G27LS-75
BLF6G27S-45
BLF6G38-10
BLF6G38-100
BLF6G38-10G
BLF6G38-25
BLF6G38-50
BLF6G38LS-100
BLF6G38LS-50
BLF6G38S-25
BLF7G20L(S)-200
BLF7G20L(S)-250P
BLF7G20L(S)-300P
BLF7G22L-130
BLF7G22L(S)-250P
BLF7G22LS-130
BLF7G24L(S)-100(G)
BLF7G27L-200P
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF7G27L(S)-75P
BLF7G27LS-200P
Portfolio
chapter
3.7.1
3.7.1
3.7.1
3.7.2
3.7.2
3.7.2.1
3.7.2
3.7.2
3.7.2
3.7.2
3.7.1.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1.1
3.7.1.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1.4
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1.2
3.7.1.2
3.7.1.2
3.7.1
3.7.1.3
3.7.1
3.7.1.4
3.7.1
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1
Type
BLF871
BLF871S
BLF878
BLF881
BLF888
BLF888A(S)
BLL6H0514-25
BLL6H1214-500
BLM6G10-30
BLM6G10-30G
BLM6G22-30
BLM6G22-30G
BLS6G2731-120
BLS6G2731-6G
BLS6G2731S-120
BLS6G2933P-200
BLS6G2933S-130
BLS6G3135-120
BLS6G3135-20
BLS6G3135S-120
BLS6G3135S-20
BLS7G2729-300P
BLS7G2729S-300
BLT50
BLT70
BLT80
BLT81
BSR56
BSR57
BSR58
BSS83
CGD1040Hi
CGD1042H
CGD1042Hi
CGD1044H
CGD1044Hi
CGD1046Hi
CGD914
CGD923
CGD942C
CGD944C
CGY1032
CGY1041
CGY1043
CGY1049
CGY887A
CGY887B
CGY888C
DAC1001D125
DAC1003D160
DAC1005D series
DAC1008D series
DAC1201D125
DAC1203D160
DAC1205D series
DAC1208D series
DAC1401D125
DAC1403D160
DAC1405D series
DAC1408D series
J108
J109
J110
J111
J112
J113
J174
J175
J176
J177
OM7650
Portfolio
chapter
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.3
3.7.3
3.7.1
3.7.1
3.7.1
3.7.1
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.3.1
3.3.1
3.3.1
3.3.1
3.5.1
3.5.1
3.5.1
3.5.2
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.8.2
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.6.2
Type
Portfolio
chapter
OM7670
PBR941
PBR951
PMBD353
PMBD354
PMBF4391
PMBF4392
PMBF4393
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ620
PRF947
PRF949
PRF957
TFF1003HN
TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
TFF11105HN
TFF11110HN
TFF11115HN
TFF11121HN
TFF11126HN
TFF11132HN
TFF11139HN
TFF11145HN
TFF11152HN
NXP Semiconductors RF Manual 14th edition
3.6.2
3.3.1
3.3.1
3.2.4
3.2.4
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.3.1
3.3.1
3.3.1
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
3.4.2
107
Notes
108
NXP Semiconductors RF Manual 14th edition
Notes
NXP Semiconductors RF Manual 14th edition
109
Notes
110
NXP Semiconductors RF Manual 14th edition
RF Manual 14th edition
Application and design manual
for High Performance RF products
May 2010
© 2010 NXP B.V.
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: May 2010
Document order number: 9397 750 16881
Printed in the Netherlands
RF Manual 14th edition
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the