72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Features General Description • The E523.52 is a programmable, high-voltage brushless motor controller for 24V..48V automotive applications, industrial applications and commercial vehicles. It integrates 3 half-bridge drivers, a 11V step down converter, two linear regulators, and a 16bit RISC microcontroller with 32kB Flash. The DC-DC converter efficiently provides 11V for the six gate drivers, the internal linear regulators, and other loads such as external Hall sensors. Up to 9 configurable IO pins facilitate interfacing with the application and the outside world. All IOs can be sampled by a 12bit, 1MS/s ADC with direct memory access. • • • Supply voltage range from 12V to 72V, operational down to 7V 11V, 100mA high efficiency DC-DC converter for gate supply and other loads Three complementary 200mA gate drivers with programmable dead time and protection features Integrated automotive 16Bit RISC processor with 4k SRAM and hardware MAC and divider units 32kByte Flash with ECC error protection Self advancing half bridge PWM generators autonomously generate various commutation waveforms 1MS/s 12bit ADC autonomous sample sequence engine synchronized to PWM with direct memory access One SPI module 4 timer capture and compare units with QEI modes One high voltage enable, 9 general purpose IOs • Thermally efficient 7x7mm 36pin QFN package • • • • • • Applications • • 48V automotive and commercial vehicle applications BLDC-Motors in industrial 24V to 72V applications Three self advancing PWM generators with integrated dead time can implement various wave-forms. Fully integrated back-EMF channels allow sensor-less commutation. Automatic ADC triggering allows programming of complex commutation algorithms. The memory can be divided into protected and field programmable areas. Internal temperature monitoring and a thermally efficient 36 Pin QFN package enable the driver section to operate close to its maximum junction temperature of 150ºC. Ordering Information Ordering-No.: Version Package E52352A79B 32k Flash Version QFN36L7 Typical Application This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 1/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 1 Package 1.1 Pinout Fig. 1.1: 36Pin QFN 7x7 Pinout Top View 1.2 Pin Description Name Pin No. Type Description PC0 1 DIO 3.3V programmable digital IO with optional analog ADC path. JTAG clock input for programming interface PC1 2 DIO 3.3V programmable digital IO with optional analog ADC path. JTAG data line for programming interface PC2 3 DIO 3.3V programmable digital IO with optional analog ADC path. VPP 4 A,I For testing purposes only, connect to GND PC[4-7] 5-8 DIO 3.3V programmable digital IO with optional analog ADC path. TMODE 9 DI 3.3V active high digital input to activate programming interface NRST 10 DIO Open drain reset pin with internal pullup. A system reset can be forced by pulling NRES low. NRST will also go low if an internal reset has occurred. Leave floating in applications VDDC 11 AIO 1.8V microprocessor core regulator. Bypass with 270nF ceramic capacitor to GND. Not intended for external loads GND 12 S VDD 13 AIO Digital GND connection for the microprocessor 3.3V regulator output. Bypass with 1uF ceramic capacitor to GND, make connections as short as possible. Do not load with currents in excess of 2mA total This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 2/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Name Pin No. Type Description GNDA 14 S Ground pin for analog FET driver circuitry. Connect to board ground directly, not via current carrying traces EN 15 HV,AI High voltage enable pin. A high on EN will activate the the DC-DC converter and the internal linear regulator. Debounced by 100us (typ). It is possible to sample the status of EN internally VG 16 HV,I Input for DC-DC converter feedback, low side driver gate voltage and internal linear regulator. Connect to the output of the DC-DC converter or an external supply between 9.5V(min) and 14V. Bypass to GND with a 33uF(typ) electrolytic capacitor GL[1-3] 17-19 HV,O Gate driver output for low side FETs. Will switch between VG and GNDP. Add a gate resistor for slew rate control GNDP 20 S LX 21 HV,O Drain of internal DC-DC converter switch. Connect to freewheeling diode and switching inductor VSUP 22 HV,S Power supply input, VSUP is the source of internal DC-DC converter switch. Bypass to GND with 100nF ceramic capacitor and electrolytic capacitor M1 23 HV,I Connection for the motor terminal 1. Return path for high-side drivers and input for back EMF sensing GH1 24 HV,O Gate driver output for high side FETs. Will switch between BST1 and M1. Add gate resistor for slew rate control BST1 25 HV,I Supply pin for GH1 M2 26 HV,I Connection for the motor terminal 2. Return path for high-side drivers and input for back EMF sensing GH2 27 HV,O Gate driver output for high side FETs. Will switch between BST2 and M2. Add gate resistor for slew rate control BST2 28 HV,I Supply pin for GH2 M3 29 HV,I Connection for the motor terminals. Return path for high-side drivers and input for back EMF sensing GH3 30 HV,O Gate driver output for high side FETs. Will switch between BST3 and M3. Add gate resistor for slew rate control BST3 31 HV,I Supply pin for GH3 AMP_OUT 32 AO Output pin for current sense amplifier. Use AMP_OUT and IN and IP to design gain and filter characteristics. This pin is also connected to the internal AD converter IP 33 AI Positive analog input for current sense amplifier IN 34 AI Negative analog input for current sense amplifier PB6 35 DIO 3.3V programmable digital IO with optional analog ADC path PB7 36 DIO 3.3V programmable digital IO with optional analog ADC path EP S High current GND connection for gate driver. Connect directly to PCB ground plane Exposed pad, connect to ground plane of the printed circuit board. Use vias for power dissipation D = digital, A = analog, S = Supply, I = Input, O = Output, B = bidirectional, HV = High Voltage This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 3/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 2 Electrical Characteristics 2.1 Absolute Maximum Ratings • Operating the beyond these limits may cause permanent damage. • Currents flowing into the circuit have positive values. Parameter VSUP, EN Voltage to GND Min. Max. Unit -0.3 72 V transient t<0.5s for max 100h over life time LX Voltage to GNDP 76 -2.4V VSUP + 0.3V GNDP to GNDA to GND -0.3 0.3 V VG to GND -0.3 15 V BST[n] to M[n] -0.3 15 V BST[n] to GNDP -0.3 87 V GH[n] to M[n] -0.3 15 V GH[n] to BST[n] -15.3 0.3 V -50 50 mA -300 300 mA M[n] to GNDP -5V VVSUP + 2V GL[n] to GNDP -0.3V VVG + 0.3V -50 50 mA -300 300 mA VDD to GND -0.3 3.6 V VDDC to GND -0.3 2 V IP, IN, AMP_OUT to GNDA -0.3V VVDD + 0.3V PB[6,7], PC[0-7], TMODE, NRST to GND -0.3V VVDD + 0.3V -10 10 mA GH[n] current transient t<5us GL[n] current transient t<5us PB[6,7], PC[0-7], TMODE, NRST current max current allowed to guaranty 80% output voltage Power dissipation QFN36L7 TA ≤ 125°C 1600 mW TA ≤ 150°C 800 mW 5 K/W Thermal resistance junction to case Junction temperature -40 150 °C Storage temperature -40 150 °C This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 4/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 2.2 ESD Protection Description Condition Symbol Min Max Unit ESD HBM Protection at Pins 15 and 22 1) VESD(HBM) -4 4 kV ESD HBM Protection at all other Pins 1) VESD(HBM) -2 2 kV ESD CDM Protection at all Pins 2) VESD(CDM) -500 500 V 1) According to AEC-Q100-002 (HBM) chip level test 2) According to AEC-Q100-011 (CDM) chip level test 2.3 Electrical Parameters All the following parameters are valid for an ambient operating temperature range of -40°C to 125°C (with respect to the absolute maximum thermal power dissipation) and a supply voltage range 12V ≤ VSUP ≤ 72V, unless otherwise specified. All voltages are referenced to GND = GNDP = GNDA Typical values are taken with the following system conditions: VSUP=48V, Tamb= 25°C and the typical components listed in the Typical Operating Circuit BOM on page 19 unless specified otherwise. Currents flowing into pins have positive values. Parameter VSUP Supply Voltage Symbol VVSUP Conditions Full Operation Min Typ Max Unit 12 24 72 V 76 V < 0,5s per event for < 100h total Standby Operation VSUP Sleep Mode Current EN Input Voltage IVSUP 7 V Sleep Mode 20 25 uA Sleep Mode, * VVSUP=24V 15 20 uA VEN_HIGH High Level 2.7V VVSUP VEN_LOW Low Level 0 1.3 V EN Input Current IEN_IN 10 uA EN Input Debounce Time tDEB_EN 100 us Thermal Error Temperature* Driver1 OTth_warn Thermal Shutoff Temperature* Driver OTth_switch_off 150 175 °C 12 V 12 V 9.5 V 240 mA 5 10 Ohm 1000 1150 kHz OTth_wa rn+10K DC-DC CONVERTER VG Output Voltage VVG IVG > -100 mA 10 VVGstandby * Standby Mode IVG > -100 mA 9 VG Undervoltage Level VPGOOD Overcurrent Level ILX On Resistance LX to VSUP RON Switching Frequency fswitch 8 11 8.75 160 Cont. conduction 270 1The warning temperature of the driver exceeds the maximum lifetime junction temperature of the microcontroller. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 5/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Parameter Symbol Conditions Min Typ Max Unit 3.1 3.3 3.5 V 3.1 V VDD REGULATOR Output Voltage VVDD Undervoltage Threshold VVDD_RSTD NRST=0 IVDD = -25mA VDDC REGULATOR Output Voltage VVDDC VDDC OK Threshold (rising edge) VVDDC_OK_RE VDDC Brown Out Threshold (falling edge) VDDC_OK_FE 1.73 1.8 1.87 V ADC VREFH trimmed 1.45 1.55 1.65 V ADC VREFH trimmed 1.30 1.40 1.50 V CURRENT SENSE AMP IP, IN Input Leakage Current ILEAK -1 1 uA Input Offset Voltage VOFFSET_AMP -10 10 mV Amplifier Settling Time* tAMP 500 ns AMP_OUT Output Resistance* RAMP_OUT 200 Ohm AMP_OUT Overcurrent Voltage Level VAMP_OUT,OC 0.95 VVDD Overcurrent Debounce Time tOC 300 Gain = 20, RG=18k, 0.25V<VAMP_OUT<3V 0.85 0.9 10 us BEMF MULTIPLEXER Divider Ratio Switching Threshold VBEMF,threshold BEMF Voltage Divider Ratio Latched with setting of RUN flag VVS,M[1..3]/VBEMF_ 32 35 40 -5% 28.8 +5% -5% 28.8 +5% V O SUP Voltage Divider Ratio VVS,M[1..3]/VBEMF_ O BEMF Divider Ratio Mismatch ΔVBEMF,Rel,Div -2 2 % GATE DRIVERS GH/L[n] RDS on to BST/VG RGH1-3_ON IGH[n]=200mA 10 20 Ohm GH/L[n] RDS on to M/GNDP RGH1-3_OFF IGH[n]=-200mA 5 10 Ohm GL[n] Pulldown Resistance to PGND RGL1-3_OFF Sleep Mode 10 Ohm VDS short-circuit cutoff threshold VDS_OFF 2.5 V Short-circuit blanking time Tdeb_VDS_OFF 5 us BST[n] input current IBST_ON 250 400 uA DIGITAL INTERFACE PB[6,7], PC[0-7] Input Voltage PB[6,7], PC[0-7] Output Voltage VDIN_HIGH High Level 2.0V VVDD VDIN_LOW Low Level 0 0.8 VOH_4 High Level, Iload = -4mA 2.4V VVDD V This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 6/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Parameter Symbol Conditions Min Typ Max Unit 0.4 V VOL_4 Low Level, Iload = 4mA 0 Pull Up Resistance RPU pull up enabled 30 48 74 kOhm Pull Down Resistance VPD pull down enabled 29 47 86 kOhm NRST Output Low Voltage VOL_4 Low Level, Iload = 4mA 0 0.4 VNRST NRST Pull Up Resistor RRES_PU VRESB = 0V 30 80 kOhm Reference L voltage*) VREFL GND reference 0 2 mV Reference H voltage VREFH Bandgap derived reference Resolution (bit) N Conversion rate fCONV Differential non-linearity DNL -1 3 LSB Integral non-linearity INL -4 4 LSB Input capacitance*) CIN 3.8 5.8 pF ON resistance of sample switch*) RIN 300 Ohm 1.6 V 48 A-D CONVERTER 2.45 2.5 2.55 V 10 10.5 12 Bit .86 4.8 MS/s THERMAL MONITORING Temperature Voltage VTEMP Temperature Slope* CTEMP ADC Channel 24, T=25°C 1.5 1.55 -3.3 mV/K SYSTEM OSCILLATOR Base Frequency FOSC_SYS Temperature Drift TCFOSC T=25°C 47 48 49 MHz -6.4 6.4 kHz/K PROGRAMMING INTERFACE TMODE Input Voltage TMODE Pull Down Resistance VTMODE_HIGH JTAG Active 2.0 V VVDD VTMODE_LOW Normal Mode 0 0.8 V RTMOD_PD VTMOD = 3.3V 29 86 kOhm 47 * not tested in production This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 7/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 3 Typical Operating Characteristics This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 8/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 4 Chip Interconnections Fig. 4.1: Chip Interconnections This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 9/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 5 Functional Description The E523.52 is a programmable brush-less 3-Phase motor controller for supply voltages from 12V to 72V. The wide operating range makes it suitable for 48V automotive, industrial and consumer applications. Operation down to 7V in Standby Mode (drivers off) allows the E523.52 to be used in 24V commercial vehicles as well. An integrated 11V PFM (pulse frequency mode) DC-DC buck converter provides efficient, reliable gate drive and can supply other loads (Hall Sensors) up to a total of 100mA current. It is possible to bypass the buck converter to reduce component cost. The motor interface provides protection features such as under-voltage and short-circuit protection of the 6 Power FETs. An integrated current sense amp allows current control and over-current detection. The IC incorporates an automotive rated 16bit RISC microcontroller with 32kByte of Flash Memory and 4kBytes of RAM allowing the implementation of various motor control algorithms. The following digital modules take the computational load off the CPU: • 16x16 bit multiply and accumulate / divide • concurrent hardware divider • a table based Pre-PWM engine generates any modulation function such as SVM, flat bottom or sine • four 16 bit PWM generators with center and edge aligned modes and dead time insertion • a sophisticated ADC controller with an autonomous sample sequencer synchronized to the PWM generators records sample sequences autonomously to memory EN pin activates the power supplies and the microcontroller. Nine programmable IO pins provide various interface options with the motor and the outside world. Two integrated SPI allow use of more complex communication interfaces. The 12Bit 1MS/s successive approximation ADC can be used to sample all digital IO pins, the current sense amplifier and the back EMF interface consisting of the three motor connectors M[1-3] and the supply voltage SUP. Internal temperature monitoring and a thermally efficient QFN package enable the E523.52 to operate close to its maximum junction temperature. 5.1 Software Development and Programming A device specific IAR Programming environment including a programming/debug interface and sample application software is available through Elmos Sales and Support. The remainder of this datasheet will explain the general capabilities of the IC to be used as a foundation upon which software algorithms can be based. For technical details on the microcontroller and driver included in this device consult the following ELMOS Documents: • 25DS0114E.xx for the B6 driver • 03SP0418.xx for the microcontroller 5.2 Standby, Wakeup and Shutdown The E523.52 powers up in sleep mode. In sleep mode, the IC uses lowest quiescent current, LX is high impedance and the gate drivers GL[1-3] are driving the external gates low. A high level at EN for at least tEN_DEB= 100us(typ) powers up the internal DC-DC converter, which supplies via VG the internal VDD and VDDC regulators as well as the gate drivers. The system will be in standby mode with the drivers off. The microcontroller comes out of reset and is ready to execute code. The state of the RUN pin in the die to die interface register is critical for switching between standby Mode, run mode and sleep mode (see Fig. Fig. 5.1). As long as the RUN flag is not set by the microcontroller, EN low for 100us(typ) will put the IC back into sleep mode. Setting the RUN flag keeps the E523.52 active regardless of the state of EN. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 10/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 It is important to verify the state of EN before clearing RUN (see section 5.5.1 ). Taking the RUN flag low will, after the RUN pin debouncing time, switch the system either into standby mode if EN is still high, or into sleep mode if EN is low. Fig. 5.1: Activation State Diagram 5.3 System Power The E523.52 has three integrated power supplies which are activated by EN. During startup the error flags ERR[1,2] are both 0b11 until VDD is ready and for at least another 500us(typ). 5.3.1 The DC-DC Converter The DC-DC step down converter with internal compensation provides 11V(typ) at up to 100mA. An internal switch connects VSUP to LX during the on-time of the converter. An external freewheeling diode, an inductor and filter capacitor complete the circuit. For component selection see section 6 . The feedback of the DC-DC converter VG is monitored for undervoltage, the driver section gets disabled if VG drops below 8V(min) and ERR1 goes high. Power to VG and the internal supplies are maintained to allow for proper shut-down. The DC-DC converter uses a PFM (pulse frequency mode) algorithm which allows for low standby currents and does not require external compensation. The switching frequency fswitch of the converter varies input voltage and load dependent but stays below 1.15 MHz(max). In standby mode, the switching behaviour will go into burst mode and the output voltage will drop to approximately VVG_SB = 9V(min) DC-DC Converter Bypass For component cost reasons it may be desirable to bypass the DC-DC converter by applying an external voltage between 9.5 and 14V directly to VG and shorting LX to SUP. The inductor can then be eliminated. It is not recommended to bypass the DC-DC converter for high operating voltages for efficiency reasons. The total load current that need to be supplied to VG is the sum of the gate current, the external load at VDD and the IC supply currents of up to 20mA. 5.3.2 The VDD Regulator Power to the internal analog and digital circuitry is provided by a linear regulator supplied from VG. Its output voltage is regulated to VVDD = 3.3V(typ), and must be buffered with an 1uF external ceramic capacitor. If the voltage at VDD falls below the power-on reset level a high appears on flags ERR[1,2] to indicate VDD undervoltage. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 11/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 The internal VDD regulator can be used by the application as a reference output and for pullup resistors up to 2mA total external current. 5.3.3 The VDDC Regulator Power to the microprocessor core is provided by a 1.8V linear regulator. This regulator is supplied from VDD and its output voltage appears at VDDC which must be buffered with an external ceramic capacitor (270nF typ). VDDC should not be used for external loads. 5.4 The Motor Control Interface The motor control interfaces consists of three high-side and three low-side drivers for the external power FETs, and two microcontroller modules which help generate the commutation signals to be applied. 5.4.1 The B6 Drivers The low-side drivers GL[1-3] are powered from VG and return the gate current to GND, the high-side drivers GH[1-3] are powered from BST[1-3] and return the gate current to the motor connections M[1-3]. A bootstrap circuit consisting of a diode and a capacitor can be connected to each high-side driver to supply the BST pins. 100% duty cycle is possible within limits when using bootstrap circuit see section . The drivers have a simple protection against short circuit of individual driver FETs and shoot through current through one B6 branch: A simple digital lock prevents both high-side and low-side from being activated simultaneously, and if the drain to source voltage across an active FET exceeds VDS_OFF = 2.5V (typ) the branch is turned off and over current error is asserted via a high on both error flags ERR[1,2]. See section 5.8.1 for more detail. 5.4.2 PRE_PWM Module The PRE_PWM module provides duty cycle and on values to the PWM3 module. The values are automatically generated by linear interpolation from a table read from flash. The current motor speed, provided by software, controls the update of the current (estimated) electrical angle "base_phase". Together with an ADC/software based position measurement a PLL can be realized which is synchronous to the angle of the real motor. The base_phase is also used to generate and capture associated sync pulses bp_sync for synchronized measurements. 5.4.3 PWM[n] Module The Motor PWM Module includes four PWM generators which share a common clock prescaler and period counter. The following output patterns can be generated: 1. leading or trailing edge aligned patterns 2. center aligned patterns 3. free toggle mode: PWM signal is set and cleared at two independently defined points in the PWM period Each PWM generator has two PWM compare registers with individual pre-load registers. Each PWM channel can control a complementary pair of outputs with a programmable dead time. Each PWM channel also has the ability to generate interrupts at the signal and dead time transitions. For information about PWM programming see the microcontroller section. 5.5 The Application Interface Pins One high voltage enable input and nine general purpose IOs (GPIOs) allow communication between the E523.52 and the application. All GPIO pins can be read in the respective registers and also routed to the following digital modules: • the integrated A/D converter This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 12/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 • two SPI modules • four timer capture and compare modules See the corresponding module descriptions in the microcontroller section for details. 5.5.1 High Voltage Enable Input EN The high voltage EN input wakes the device from sleep mode. A high on EN must be present for 100us to be considered valid. EN can be monitored in two ways: 1. The voltage at EN can be connected to one of the GPIO pins. A voltage divider may have to be used to scale the voltage level down to 3.3V (the voltage divider resistors should be in the 10kOhm range). 2. A low at EN is also communicated to the microcontroller via the BEMF interface. A low at EN will lead to a supply voltage reading of 0. (see section 5.5.4 for details) If EN is low and the RUN bit in the die to die Interface is not set, the IC will power down and enter sleep mode after 100us. 5.5.2 Digital IOs PB[6,7], PC[0-7] The digital IOs can be configured as inputs or outputs. For time critical events, such as hall signal transitions the digital IOs can be programmed to cause an interrupt either on their rising edge, their falling edge or on both edges. All GPIOs can multiplexed to the AD converter and/or routed to the following microcontroller modules: Clocks and PWM Signals Two capture and compare timers are included in each CCT module. They can be used to generate clock signals, analyze PWM or frequency inputs and generate PWM or frequency outputs. The IO MUX control module defines which GPIO is connected to which timer module. The timers are configured in the capture compare timer module. See the microcontroller section for details. SPI communication The SPI module can be used to implement serial communication with the application. The IO mux control module defines how the GPIO pins are connected to the SPI module interface channels: • SCK: SPI clock (driven by master) • NSS: low active slave select (driven by master) • SDO: data out • SDI: data in The SPI modules can be configured to operate in master or in slave mode. The phase, polarity and bit order can be defined and they support word bit length or multiple data word transfer. For setup see the SPI module registers in the microcontroller section. 5.5.3 The Current Sense Amplifier An integrated current sense amplifier helps measure the system current across a low side shunt resistor and triggers the over-current detection. Amplifier gain and offset are designed by connecting an external resistor network between IN, IP and AMP_OUT. If the output voltage at AMP_OUT exceeds 90% of VDD (VAMP_OC,typ = 3.0V) the motor is shut off and an over current error is reported. For designing information, see section 6.1.7 . The result of the motor current measurement is mapped to GPIO Port B Bit 5 and is accessed through the ADC multiplexer channel 14. See section 5.6.1 for details. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 13/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 5.5.4 Back-EMF Measurement Back-EMF transition detection is done by sampling the undriven motor phase during a PWM period until the value passes VSUP/2. This transition is used to advance the motor commutation to the next motor phase. The E523.52 includes an integrated BEMF divider to ease this measurement. The BEMF circuit consists of four voltage dividers, an analogue multiplexer and a buffer. The inputs are taken from the motor phases M[1-3] and the supply voltage. For EN montitoring purposes, the supply voltage reading returns the value 0 if the EN pin has gone low. The buffered output is connected internally to interface module B Bit4 and must be multiplexed to the ADC for measurement. For more information see section 5.7.2 . 5.6 The Analog to Digital Converter The microprocessor of the E523.52 includes a 1Ms/s 12 bit ADC which can be used to measure the voltages at all GPIOs, the output of the current sense amplifier and the BEMF voltages. The ADC has direct memory access and automatic trigger functions to be able to quickly and autonomously sample relevant system signals such as BEMF voltage, motor current, etc. The ADC control module facilitates these functions. 5.6.1 The ADC Control Module The E523.52 implements a flexible ADC scheduling scheme which allows to set the configuration for each ADC measurement independently. Multiple measurements can be configured in advanced as a list of sampling jobs to be executed from memory. The generated sample sequences are stored in SRAM via DMA. For details on how to use the ADC, see the document 03SP0418.xx. 5.7 The Microcontroller The microcontroller of the E523.52 is designed to support EC-motor commutation algorithms such as block and sinusoidal commutation based on Back-EMF or hall sensors. It includes the following modules: • 16bit Harvard (H430) CPU core • 16k x 16bit CRC protected FLASH and 4K byte parity protected SRAM • 16Bytes of protected, user accessible memory for parametrization • 16bit multiply and divide module • 12Bit 1MS/s SAR ADC • 3 x 16bit self advancing PWM generators for edge or center aligned PWM with 6 complementary *outputs with dead-time programming • 4 channel 16bit timer-capture and compare unit • GPIOs • integrated SPI For detailed technical information on the microcontroller and it's periphery see 03SP0418.xx 5.7.1 Software Development and Programming A device specific IAR Programming environment including a programming/debug interface and sample application software is available through Elmos Sales and Support. Programming Interface External access to the microcontroller of the E523.52 is provided through a two wire JTAG interface. The interface lines must be connected to the device as follows: This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 14/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 JTAG Line IC Pin Name IC Pin Number VREF VDD 13 TMODE TMODE 9 TDA PC1 2 TCK PC0 1 NRSTI NRST 10 5.7.2 Die to Die Interface The E523.52 is a dual die combination of the E523.50 driver IC and the Elmos motor controller E523.99. The following figure shows how the two IC's are interconnected. Fig. 5.2: Internal Interconnects The most important data signals are the six PWM lines connected to port B1/B2/B3 for the high-side gates and to port A4/A5/A6 for the low-side gates. The CPU can activate the high-voltage gate driver by setting the “RUN” signal connected to Port A1 to “high”. As long as this signal is at GND, the E523.50 will not switch the gates. Since there is no SPI interface to read out the current status of the driver, there are two error signals “ERR1/ERR2” connected to “Port A7/B0”, that notify of any abnormal operation. The output of the integrated operational amplifier “AMP_OUT” is hard-wired to “Port B5” and can be measured by the SARADC-module. The E523.50 has an internal multiplexer and an internal voltage divider, making it possible to measure the three phase voltages and the supply voltage directly as well as sample the status of then enable pin. With the help of the two control signals “BMUX1/2”, connected to “Port A2/A3”, the multiplexer of the E523.50 switches one of the motor-phases U,V or W to the output “BEMF_O”. This output is connected to “Port B4” and can be measured by the SARADC of the CPU. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 15/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 The source can be selected via the bits BEMF_MUX1 and BEMF_MUX2 which are connected to interface module A bits 2 and 3 in the following way: Bit3 Bit2 Function Port Register A MUX2 MUX1 0 0 supply voltage selected, GND if EN is low. 0 1 motor phase M1 selected 1 0 motor phase M2 selected 1 1 motor phase M3 selected The integrated voltage dividers scale the motor phase voltages to 2.5V full scale range. The supply voltage is always scaled by a factor of 1:28.8: • For all supply voltages divider ratio 1:28.8 (typ) is used (72V = 2.5V) The gain settings are defined when the IC enters run mode. In standby mode (EN=0) the VS voltage divider output is forced to ground. 5.8 System Errors Two types of errors can be detected by the E523.52: errors concerning the driver/power section of the IC and errors concerning the microcontroller. 5.8.1 Driver Errors The E523.52 can detect and report undervoltage, overtemperature, and overcurrent and VDD undervoltage. These errors are communicated to the error flags ERR1 and ERR2. Depending on the status of the RUN flag, these errors are decoded as follows. Error Type RUN/PA1 ERR2/PB0 ERR1/PA7 Comment No Error High 0 0 VG Undervoltage High 0 1 not latched Overtemperature warning High 1 0 not latched Overcurrent High 1 1 latched X 1 1 not latched VDD Undervoltage The more serious errors cause ERR2 to trigger so PA7 should be used to trigger an interrupt. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 16/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Undervoltage To protect the external FETs from operating in their linear region and experiencing thermal stress, VG is observed. If VG falls below VVG_UV undervoltage condition is reported and the Power FETs are switched off. Undervoltage does not affect the operation of the device supplies. Undervoltage conditions are not latched. The error will automatically vanish when the undervoltage condition vanishes. Over temperature If the IC temperature exceeds 150°C, an over temperature warning is reported, the system will keep running, but should be shut down as fast as possible. The overtemperature condition is not latched and clears on its own once the temperature returns below the threshold. If the temperature exceeds over temperature shutdown threshold the IC will shut down its power supplies and enter sleep mode. Fig. 5.4: Overtemperature Behavior Overcurrent/FET short circuit An overcurrent comparator observes the output of the current sense amp. If the voltage on AMP_OUT exceeds VAMP_OC,typ = 3V for longer then tOC (10us typ) the drivers are turned off and an overcurrent event is indicated. The drivers will stay off until the next rising edge on the drive control signals. Overcurrent is latched, to clear this error, cycle the RUN flag. Driver short circuit is detected by monitoring the voltage drop across each individual FET. If, during operation, the voltage across a FET exceeds 2.5V(typ), the corresponding half-bridge is disabled, until RUN is cycled to clear the error. To differentiate between FET short circuit and overcurrent the motor phases can be observed via the BEMF interface: A short circuit on an idividual FET results in continued switching activity at the remaining phases, overcurrent shuts down the entire B6 bridge. VDD Undervoltage An undervoltage event at VDD threatens a reset of the microcontroller. Immediate shutdown (RUN=Low) should be the response, if the ERR signals remain high a VDD undervoltage is the cause. The micro controller can use its independent BEMF measurement to do postprocessing if it still has power. If the error persists after RUN = Low, it was a VDD undervoltage event. The VDD undervoltage signaling can also be used to check for VDD integrity before activating the system. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 17/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 5.8.2 Micro controller Errors To allow for fail-safe operation of the E523.52, a number of microprocessor internal fault conditions cause system errors which may either force an interrupt or a system reset: Error Name Effect Explanation Power On Reset Reset VDD supply rises above 2.2V(typ) Brownout Reset VDD below 2.9V(max) , or VDDC below 1.5V(max) CPU Parity programmable parity error in CPU register SRAM Parity programmable SRAM access failed Flash Bit corrected programmable Flash access has required a bit correction Flash Bit failure programmable Flash access has resulted in a bit error Protected Write programmable unexpected write access to a protected Flash area Watchdog programmable an error is asserted if the Software fails to trigger the watchdog timer correctly Software programmable software has caused a reset event See the document 03SP0418.xx specification for more information about these errors. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 18/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 6 Typical Application Circuit Fig. 6.1: Typical Operating Circuit Thin film Resistors and ceramic capacitors without rating can be 0604(metric) or larger. For more information see “Component Selection“ below. Symbol Description Type Min CVSUP,CER Supply capacitance HF ceramic 80 * nF 100V CVSUP Supply capacitance LF electrolytic 10 * uF 0.05Ω, 100V CVDD VDD output capacitance ceramic 1 uF CVDDC VDDC output capacitance REN Optional enable timing resistor thinfilm CEN Optional enable timing capacitor ceramic 220 1 Typ Max Unit 270 4700 * 100 100 Rating Example nF kΩ nF 100V This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 19/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Symbol Description LLX Switching inductor DLX Switching diode Type Min 120 Typ Max Unit * 680 uH Schottky Rating Example 240mA* WE74477724-26 EPC B82462A 500mA, SS1H9/MUH1PB 100V Reverse Recovery Time 22 33 25 ns 47 uF 1 Ω 100 nF 1 Ω CVG Buck output capacitor RESR_CVG ESR of CVG CVG,CER VG bypass capacitor ceramic ROUT DCR compensation thinfilm RBST Inrush current limiter thinfilm 10 Ω CBST Bootstrap capacitor ceramic 100 nF DBST Bootstrap diode bipolar 0.6 0.47 0.68 33 47 0.47 0.68 0.6 V 25V 25V 500mA, SS1H9/MUH1PB 100V 30 Ω RGH1 Gate resistor high-side thinfilm 100 RGH2 Gate resistor high-side pulldown thinfilm RGL Gate resistor low-side thinfilm ML,MH Power-MosFET RSN Optional snubber resistor thinfilm 4.7 Ω CSN Optional snubber capacitor ceramic 2.2 nF RSH Current sense shunt resistor Metal RO Amplifier input offset resistor thinfilm RFP Amplifier input feedback resistor thinfilm * kΩ ≤1% RFN Amplifier input feedback resistor thinfilm * kΩ ≤1% RG Amplifier gain resistor thinfilm 17.25 18 kΩ ≤1% RNRST External NRST pullup thinfilm 4.7 2.2 30 Meg Ω 100 * 1 * 100V 10 IRFS4610 0.5W mΩ ≤1%,3W WSL3637 ≤1% 100 kΩ *See Component Selection. 6.1 Component Selection The calculations suggested in the following section do not necessarily account for worst case parameters of the components suggested. The user is responsible for worst case calculations by considering min. and max. values in the corresponding datasheets. 6.1.1 Enable Threshold and Timing It is possible to tune the activation threshold of the IC by attaching a resistor divider to EN. The E523.52 will activate once the voltage VEN is greater than VEN_HIGH = 2.7V(min). EN has a debounce time of tEN_DEB = 100us(typ). For additional glitch filtering add a filter capacitor CEN to EN. CEN is also recommended to improve the immunity of the application against EMI, ESD and short supply voltage transients. 6.1.2 Supply Filtering Reverse Polarity This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 20/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 The E523.52 does not have internal reverse polarity protection and has to be protected along with the rest of the application if so desired. Several options are possible: • No Protection This is a useful solution for energy recuperation where the power supply must sink and source energy. But a reverse connection of the supply pins will most likely destroy the application and may result in fire. • Diode in the supply path This simplest method is not very well suited for motor applications as the power dissipation of a diode is significant at higher load currents. Energy returned from the motor cannot flow back into the supply and has to be stored locally in the bypass capacitors. Significant power surges can result and may have to be protected against. • FET in the GND path An N-Channel FET in the GND path is fairly simple to implement with a small pullup resistor from its gate to supply. Care has to be taken in case of voltage surges and significant ground offsets can result relative to the outside world. • FET in the supply path P and N-channel FETs in the supply path are the best solution. P-Channel devices are comparatively more expensive and N-channel FETs are more complex to control to achieve fast turn-on but also turn-off. The dimensioning of the electrolytic bypass capacitor is more complex. It must absorb supply surges in case of input transients as well as energy fed back by the motor. For ETSI EN 300 132-2 surge protection at least 470uF with less than 50mOhm ESR are required to protect the E523.52 against overvoltage. This represents the minimum size! Its rating is defined by the ripple current of the motor. The peak to peak ripple value equals the peak motor current. It may be necessary to several capacitors in parallel to increase the overall ripple current performance. A small HF CSUPc 100nF(typ) ceramic capacitor should be placed across the leads of CSUP to suppress fast transients. Energy Recuperation In addition the bypass capacitor may have to absorb the energy returned by the motor to prevent the local voltage from exceeding the maximum possible ratings of 72V. Worst case scenario is a motor that is actively braking and no energy can flow back into the supply because of a reverse polarity device or a line disruption. In that case the capacitor will have to absorb all the energy present in the motor at the beginning of breaking: C SUP ≥ 2⋅E Mot 72V 2V 2BATmax With EMot being the mechanical energy present in the motor, and VBATmax the maximum possible supply voltage. If the capacitance becomes too large, resistive braking with a brake chopper may be necessary. Inrush Current Limit Surges Hot-plugging the application into a low-ohmic high-voltage supply can lead to significant inrush current when the on-board capacitors are charged. This will lead to arcing at the connector and may cause significant input voltage transients at the IC beyond the absolute maximum ratings. It is recommended to limit the inrush current into the application. See the evaluation kit schematic for a possible circuit. 6.1.3 The Step-Down Supply Inductor selection of the switch mode power-supply depends mainly on the maximum ripple current which is determined by the maximum input voltage. The following table gives an overview: VVSUP Min LLX 12 V 120 μH 24 V 150 μH This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 21/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 VVSUP Min LLX 36 V 330 μH 48 V 470 μH 60 V 560 μH 72 V 680 μH The inductor has to be selected for a saturation current higher than the maximum peak current ILX(240mA). When using an electrolytic capacitor choose one that has an appropriate ripple current rating. If the ESR of the electrolytic capacitor is in the range specified in the recommended operating conditions no additional device is required. If the ESR is lower an appropriate additional resistance is required. If the internal step down supply is not to be used, it is possible to apply an external voltage between 9.6V and 14V directly to VG and shorting LX to VSUP. In that case, the inductor can then be eliminated. It is not recommended to bypass the DC-DC converter for operating voltages above 36V for efficiency reasons. 6.1.4 Bootstrap Circuit The bootstrap capacitors CBST transfer their charge to the gates of the external FETs through the high-side drivers. To be on the safe side, their capacitance CBST should be at least an order of magnitude higher than the total gate capacitance of the external high-side FET. For smaller CBST consider the voltage drop during charge distribution. The resulting gate voltage at the external FET VGate should stay sufficiently high and is governed by the following equation: C BST V Gate =V VG V Diode ⋅ with VDiode being the forward voltage of the boostrap diodes DBST and C BST C Gate CGate the gate capacitance of the external FETs. To reduce inrush currents upon activation of the IC, the bootstrap capacitors are charged through resistor RBST and diode DBST while the motor phase M[n] is at GND potential. RBST should be at least 10 times the series resistance of CVG. For operation at or near 100% duty cycle a number of additional factors have to be considered. The bootstrap capacitors will loose their charge due to the current IBSleak which is the sum of the input current on BST IBS_on,max = 200uA(typ), gate pulldown resistance, gate leakage, and diode leakage. Maintaining 100% duty cycle longer than t 100%= C BST⋅2V may lead to low enhancement at the correI BSleak sponding high-side switch. 6.1.5 Gate Resistors Gate resistors act together with the intrinsic gate capacitance of the external power FETs as an RC circuit which slows the rise and fall times of the gate voltage. Slower turn on and turn off of the power FETs reduces the overshoot and ringing of the phase voltage, and also reduces the energy in the higher harmonics of the switching frequency. The disadvantage of higher rise and fall times are an increase in power dissipation during switching and a reduction of efficiency. It is also possible to modify turn on and turn off slopes independently by placing a reverse conducting diode with a series resistor across the gate resistors. In this case the charging current will flow through RGc, while the discharge current will flow through Rgc||RGdc. Especially for logic level FETs with Vth<6V the additional discharge path is strongly required to prevent cross current in the bridge. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 22/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 6.1.6 Snubber Dimensioning A “Snubber” circuit at the motor phases will suppress the high-frequency ringing (typically in the 10MHz..100MHz range) that can occur at the rising edges of the motor phases as they switch from ground to supply and back. This ringing is caused by a series resonant circuit of the depletion region capacitance also called reverse-recovery capacitance CRR of the switching power FET and the trace inductances of the PCB wiring and bond wires. For a detailed description on why and how snubber circuits work, see “Calculating Optimum Snubbers” by Jim Hagermann (to be found on the internet). For an experimental way to determine the snubber components follow these instructions: 1. Place a 0 Ohm resistor (short) in position of RSN and find a capacitor CTMP which reduces the ringing frequency fR by 50%. The resonant capacitance value CRR is approximately 1/3 of CTMP. 2. The snubber resistance is then RSN = 1 with fR being the original ringing frequency. 2 f R C RR It would be sufficient to place RSN from the phase to GND to damp the resonant circuit, but the resulting power dissipation would be prohibitive. Therefore CSN is placed in series with RSN to block DC currents. The 3dB cutoff frequency of the snubber circuit should now is below fR but well above the PWM frequency fPWM. 3. CSN should now be between CRR and 3·CRR. The power of the snubber circuit is all dissipated in RSN and can be calculated as 2 P SN =C SN⋅ f PWM⋅V VSUP Note depending on the PCB layout and parasitic inductances of the VSUP capacitors it may be necessarry to add one snubber network directly to each of the FETs. 6.1.7 Amplifier Dimensioning For calculations for the current measurement it is assumed the motor current shall be measured in both directions, allowing for energy recuperation and current limited braking as well. This means that the input of the current measurement amplifier should have a positive offset of half the measurement range. The output of the current amplifier is internally connected to port A5 which must be multiplexed to the internal AD converter. Note: Always use a zero current ADC reference measurement with before turning the motor on to eliminate offsets introduced by component parameter variations! The first component to be chosen is the shunt resistor RSH which provides the input voltage for the current measurement path. Its limiting factors are its power dissipation PSHmax and the value of the maximum operational motor current IMOTmax which - in block commutation - defines RSH as: RSH ≤ P SHmax I 2MOTmax for sine commutation use the RMS value of IMOTmax for the power calculation! Power dissipation should for practical reasons not exceed 3W at 85°C. The chosen shunt resistor must also support the maximum motor current IMOTmax. The current path gain ASH dimensioning depends on the following factors: 1. The overcurrent trip threshold VAMP_OC of the E523.52. 2. The maximum peak current IMOTpeak of the motor which should trigger overcurrent. 3. The maximum DC motor current IMOTmax which must be measured. 4. The upper threshold voltage VREFH=2.5V(typ) of the ADC. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 23/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Motor Current Measurement Fig. 6.2: Bi-directional Current Measurement To make optimum use of the input range of the ADC it is recommended to calculate the network such, that the maximum motor current can still be measured. Calculate the gain as follows: ASH = V REFH and the offset V SHoffs =I MOTmax⋅R shunt⋅ASH 2⋅I MOTmax⋅Rshunt The resistor gain network with RG = 18kOhm can be calculated as such: R FP=R FN = RG 18k Ω = ( ASH 1) ( ASH 1) In order to place zero motor current in the middle of the full scale range VADC of the analog digital converter, the voltage offset VSHoffs is applied by populating the offset pullup resistor RPP as: R PP= V DD ⋅ R FN RG R FN V SHoffs To calculate the motor current Imot from the voltage VADC sampled by the microcontroller from AMP_OUT use the following formula: V ADC R FN ⋅V DD⋅G P ASH with G P = being the gain of the offset resistor network. RFN RPP I mot = RSH⋅(1G P ) Overcurrent Shutoff Level Based on the above dimensioning suggestions, the overcurrent shutoff level IMOTpeak will be 19%(typ) higher than the maximum DC motor current IMOTmax. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 24/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 6.2 Layout Considerations The E523.52 comes in a thermally effective QFN package. It is important to connect the exposed pad of the package to circuit ground and using a ring of vias to have a good thermal connection into the PCB. The IC GND pin should be connected to the ground plane directly and not through current carrying traces. A power ground island should connect the ground terminal of the motor bypass capacitances CVSUP and CVSUP,CER, and the ground terminal of the shunt resistor. GNDP should be connected to the power ground terminal as well. Mirroring the ground terminal to the supply layer helps with EMI issues. Keep switching traces away from sensitive circuits and current carrying traces as wide as possible. 6.2.1 Switching Power Supply The switching power supply consists of the EMI filter, CVG,CER, DLX, LLX, and CVG. The ground connections of these components should be as close together as possible to keep the switching current loop small. Use a small via grid to tie the switching ground to the PCB ground plane. The wire loop from LX through LLX to VG should be short. The connection from CVG to VG is less critical. 6.2.2 Gate-Control Circuit The traces connected to the pins BST[1-3], GH[1-3], M[1-3], GL[1-3] and GNDP are considered the gate control circuit. Keep the gate control circuitry traces as short and wide as possible to carry peak currents of up to 500mA. Also keep in mind that these loops will emmit HF radiation. Keep the bootstrap components CBST close to the IC. 6.2.3 Current Sensing The motor current is measured across a shunt resistor in the ground path of the motor. The current sense lines on the shunt side of RFN, RFP MUST be kelvin connected to each end of the shunt resistor and should be routed in parallel to the IC. Do NOT connect RFN to a local ground terminal by the IC. The internal OPAMP is very fast. Place the gain network as close to the IC as possible to ensure minimum parasitics at the OPAMP pins. Also refer to the Evaluation Kit as a layout example. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 25/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 7 Package Reference The package is a 7x7mm QFN36 with a pin pitch of 0.65mm. It comforms to to Jedec MO-220-K, version VHHD-4. Fig. 7.1: Package outline Fig. 7.2: Package dimension table This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 26/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 8 Record of revisions Chapter Rev. - .00 Description of change Initial revision Date Released 10.11.2015 JOKR/ZOE This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 27/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 9 Index 9.1 Table of contents 1 Package............................................................................................................................................................2 1.1 Pinout......................................................................................................................................................2 1.2 Pin Description.........................................................................................................................................2 2 Electrical Characteristics..................................................................................................................................4 2.1 Absolute Maximum Ratings.....................................................................................................................4 2.2 ESD Protection.........................................................................................................................................5 2.3 Electrical Parameters...............................................................................................................................5 3 Typical Operating Characteristics....................................................................................................................8 4 Chip Interconnections.......................................................................................................................................9 5 Functional Description....................................................................................................................................10 5.1 Software Development and Programming.............................................................................................10 5.2 Standby, Wakeup and Shutdown...........................................................................................................10 5.3 System Power .......................................................................................................................................11 5.3.1 The DC-DC Converter....................................................................................................................11 5.3.2 The VDD Regulator........................................................................................................................11 5.3.3 The VDDC Regulator.....................................................................................................................12 5.4 The Motor Control Interface ..................................................................................................................12 5.4.1 The B6 Drivers...............................................................................................................................12 5.4.2 PRE_PWM Module........................................................................................................................12 5.4.3 PWM[n] Module..............................................................................................................................12 5.5 The Application Interface Pins...............................................................................................................12 5.5.1 High Voltage Enable Input EN ......................................................................................................13 5.5.2 Digital IOs PB[6,7], PC[0-7]............................................................................................................13 5.5.3 The Current Sense Amplifier..........................................................................................................13 5.5.4 Back-EMF Measurement...............................................................................................................14 5.6 The Analog to Digital Converter.............................................................................................................14 5.6.1 The ADC Control Module...............................................................................................................14 5.7 The Microcontroller.................................................................................................................................14 5.7.1 Software Development and Programming.....................................................................................14 5.7.2 Die to Die Interface .......................................................................................................................15 5.8 System Errors.........................................................................................................................................16 5.8.1 Driver Errors...................................................................................................................................16 5.8.2 Micro controller Errors....................................................................................................................18 6 Typical Application Circuit..............................................................................................................................19 6.1 Component Selection.............................................................................................................................20 6.1.1 Enable Threshold and Timing........................................................................................................20 6.1.2 Supply Filtering...............................................................................................................................20 6.1.3 The Step-Down Supply..................................................................................................................21 6.1.4 Bootstrap Circuit.............................................................................................................................22 6.1.5 Gate Resistors...............................................................................................................................22 6.1.6 Snubber Dimensioning...................................................................................................................23 6.1.7 Amplifier Dimensioning..................................................................................................................23 6.2 Layout Considerations............................................................................................................................25 6.2.1 Switching Power Supply.................................................................................................................25 6.2.2 Gate-Control Circuit.......................................................................................................................25 6.2.3 Current Sensing.............................................................................................................................25 7 Package Reference........................................................................................................................................26 8 Record of revisions.........................................................................................................................................27 9 Index...............................................................................................................................................................28 9.1 Table of contents....................................................................................................................................28 Table of Figures Fig. 1.1: 36Pin QFN 7x7 Pinout Top View..........................................................................................................2 Fig. 4.1: Chip Interconnections...........................................................................................................................9 This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 28/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Fig. 5.1: Activation State Diagram....................................................................................................................11 Fig. 5.2: Internal Interconnects..........................................................................................................................15 Fig. 5.3: Back EMF Measurement ...................................................................................................................16 Fig. 5.4: Overtemperature Behavior.................................................................................................................17 Fig. 6.1: Typical Operating Circuit....................................................................................................................20 Fig. 6.2: Bi-directional Current Measurement...................................................................................................25 Fig. 7.1: Package outline..................................................................................................................................27 Fig. 7.2: Package dimension table...................................................................................................................27 This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 29/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 WARNING – Life Support Applications Policy Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. In the development of your design, please ensure that Elmos Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications. General Disclaimer Information furnished by Elmos Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by Elmos Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Elmos Semiconductor AG. Elmos Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. Application Disclaimer Circuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of Elmos Semiconductor AG or others. Contact Information Headquarters Elmos Semiconductor AG Heinrich-Hertz-Str. 1 • D-44227 Dortmund (Germany) ℡: +492317549100 : sales-germany@elmos.com Sales and Application Support Office North America Elmos NA. Inc. 32255 Northwestern Highway • Suite 220 Farmington Hills MI 48334 (USA) ℡: +12488653200 : sales-usa@elmos.com Sales and Application Support Office China Elmos Semiconductor Technology (Shanghai) Co., Ltd. Unit 16B, 16F Zhao Feng World Trade Building, No. 369 Jiang Su Road, Chang Ning District, Shanghai, PR China, 200050 ℡: +86216210 0908 : sales-china@elmos.com Sales and Application Support Office Korea Elmos Korea B-1007, U-Space 2, #670 Daewangpangyo-ro, Sampyoung-dong, Bunddang-gu, Sungnam-si Kyounggi-do 463-400 Korea ℡: +82317141131 : sales-korea@elmos.com Sales and Application Support Office Japan Elmos Japan K.K. BR Shibaura N Bldg. 7F 3-20-9 Shibaura, Minato-ku, Tokyo 108-0023 Japan ℡: +81334517101 : sales-japan@elmos.com : www.elmos.com This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 30/31 QM-No.: 25DS0135E.00 72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER E523.52 Advance Product Information – Jan 18, 2016 Sales and Application Support Office Singapore Elmos Semiconductor Singapore Pte Ltd. 3A International Business Park #09-13 ICON@IBP • 609935 Singapore ℡: +65 6908 1261 : sales-singapore@elmos.com © Elmos Semiconductor AG, 2014. Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited. This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice. Elmos Semiconductor AG Data Sheet 31/31 QM-No.: 25DS0135E.00