Features Applications General Description Ordering Information

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72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Features
General Description
•
The E523.52 is a programmable, high-voltage brushless
motor controller for 24V..48V automotive applications,
industrial applications and commercial vehicles. It integrates 3 half-bridge drivers, a 11V step down converter, two
linear regulators, and a 16bit RISC microcontroller with
32kB Flash.
The DC-DC converter efficiently provides 11V for the six
gate drivers, the internal linear regulators, and other loads
such as external Hall sensors.
Up to 9 configurable IO pins facilitate interfacing with the
application and the outside world. All IOs can be sampled
by a 12bit, 1MS/s ADC with direct memory access.
•
•
•
Supply voltage range from 12V to 72V, operational
down to 7V
11V, 100mA high efficiency DC-DC converter for gate
supply and other loads
Three complementary 200mA gate drivers with programmable dead time and protection features
Integrated automotive 16Bit RISC processor with 4k
SRAM and hardware MAC and divider units
32kByte Flash with ECC error protection
Self advancing half bridge PWM generators autonomously generate various commutation waveforms
1MS/s 12bit ADC autonomous sample sequence engine
synchronized to PWM with direct memory access
One SPI module
4 timer capture and compare units with QEI modes
One high voltage enable, 9 general purpose IOs
•
Thermally efficient 7x7mm 36pin QFN package
•
•
•
•
•
•
Applications
•
•
48V automotive and commercial vehicle applications
BLDC-Motors in industrial 24V to 72V applications
Three self advancing PWM generators with integrated dead
time can implement various wave-forms. Fully integrated
back-EMF channels allow sensor-less commutation. Automatic ADC triggering allows programming of complex commutation algorithms. The memory can be divided into protected and field programmable areas.
Internal temperature monitoring and a thermally efficient 36
Pin QFN package enable the driver section to operate
close to its maximum junction temperature of 150ºC.
Ordering Information
Ordering-No.:
Version
Package
E52352A79B
32k Flash Version
QFN36L7
Typical Application
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
1/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
1 Package
1.1 Pinout
Fig. 1.1: 36Pin QFN 7x7 Pinout Top View
1.2 Pin Description
Name
Pin No.
Type
Description
PC0
1
DIO
3.3V programmable digital IO with optional analog ADC path. JTAG
clock input for programming interface
PC1
2
DIO
3.3V programmable digital IO with optional analog ADC path. JTAG
data line for programming interface
PC2
3
DIO
3.3V programmable digital IO with optional analog ADC path.
VPP
4
A,I
For testing purposes only, connect to GND
PC[4-7]
5-8
DIO
3.3V programmable digital IO with optional analog ADC path.
TMODE
9
DI
3.3V active high digital input to activate programming interface
NRST
10
DIO
Open drain reset pin with internal pullup. A system reset can be
forced by pulling NRES low. NRST will also go low if an internal
reset has occurred. Leave floating in applications
VDDC
11
AIO
1.8V microprocessor core regulator. Bypass with 270nF ceramic
capacitor to GND. Not intended for external loads
GND
12
S
VDD
13
AIO
Digital GND connection for the microprocessor
3.3V regulator output. Bypass with 1uF ceramic capacitor to GND,
make connections as short as possible. Do not load with currents in
excess of 2mA total
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
2/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Name
Pin No.
Type
Description
GNDA
14
S
Ground pin for analog FET driver circuitry. Connect to board ground
directly, not via current carrying traces
EN
15
HV,AI
High voltage enable pin. A high on EN will activate the the DC-DC
converter and the internal linear regulator. Debounced by 100us
(typ). It is possible to sample the status of EN internally
VG
16
HV,I
Input for DC-DC converter feedback, low side driver gate voltage
and internal linear regulator. Connect to the output of the DC-DC
converter or an external supply between 9.5V(min) and 14V.
Bypass to GND with a 33uF(typ) electrolytic capacitor
GL[1-3]
17-19
HV,O
Gate driver output for low side FETs. Will switch between VG and
GNDP. Add a gate resistor for slew rate control
GNDP
20
S
LX
21
HV,O
Drain of internal DC-DC converter switch. Connect to freewheeling
diode and switching inductor
VSUP
22
HV,S
Power supply input, VSUP is the source of internal DC-DC converter switch. Bypass to GND with 100nF ceramic capacitor and
electrolytic capacitor
M1
23
HV,I
Connection for the motor terminal 1. Return path for high-side drivers and input for back EMF sensing
GH1
24
HV,O
Gate driver output for high side FETs. Will switch between BST1
and M1. Add gate resistor for slew rate control
BST1
25
HV,I
Supply pin for GH1
M2
26
HV,I
Connection for the motor terminal 2. Return path for high-side drivers and input for back EMF sensing
GH2
27
HV,O
Gate driver output for high side FETs. Will switch between BST2
and M2. Add gate resistor for slew rate control
BST2
28
HV,I
Supply pin for GH2
M3
29
HV,I
Connection for the motor terminals. Return path for high-side drivers and input for back EMF sensing
GH3
30
HV,O
Gate driver output for high side FETs. Will switch between BST3
and M3. Add gate resistor for slew rate control
BST3
31
HV,I
Supply pin for GH3
AMP_OUT
32
AO
Output pin for current sense amplifier. Use AMP_OUT and IN and
IP to design gain and filter characteristics. This pin is also connected to the internal AD converter
IP
33
AI
Positive analog input for current sense amplifier
IN
34
AI
Negative analog input for current sense amplifier
PB6
35
DIO
3.3V programmable digital IO with optional analog ADC path
PB7
36
DIO
3.3V programmable digital IO with optional analog ADC path
EP
S
High current GND connection for gate driver. Connect directly to
PCB ground plane
Exposed pad, connect to ground plane of the printed circuit board.
Use vias for power dissipation
D = digital, A = analog, S = Supply, I = Input, O = Output, B = bidirectional, HV = High Voltage
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
3/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
2 Electrical Characteristics
2.1 Absolute Maximum Ratings
•
Operating the beyond these limits may cause permanent damage.
•
Currents flowing into the circuit have positive values.
Parameter
VSUP, EN Voltage to GND
Min.
Max.
Unit
-0.3
72
V
transient t<0.5s for max 100h
over life time
LX Voltage to GNDP
76
-2.4V
VSUP + 0.3V
GNDP to GNDA to GND
-0.3
0.3
V
VG to GND
-0.3
15
V
BST[n] to M[n]
-0.3
15
V
BST[n] to GNDP
-0.3
87
V
GH[n] to M[n]
-0.3
15
V
GH[n] to BST[n]
-15.3
0.3
V
-50
50
mA
-300
300
mA
M[n] to GNDP
-5V
VVSUP + 2V
GL[n] to GNDP
-0.3V
VVG + 0.3V
-50
50
mA
-300
300
mA
VDD to GND
-0.3
3.6
V
VDDC to GND
-0.3
2
V
IP, IN, AMP_OUT to GNDA
-0.3V
VVDD + 0.3V
PB[6,7], PC[0-7], TMODE, NRST
to GND
-0.3V
VVDD + 0.3V
-10
10
mA
GH[n] current
transient t<5us
GL[n] current
transient t<5us
PB[6,7], PC[0-7], TMODE, NRST
current
max current allowed to guaranty
80% output voltage
Power dissipation QFN36L7
TA ≤ 125°C
1600
mW
TA ≤ 150°C
800
mW
5
K/W
Thermal resistance junction to case
Junction temperature
-40
150
°C
Storage temperature
-40
150
°C
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
4/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
2.2 ESD Protection
Description
Condition
Symbol
Min
Max
Unit
ESD HBM Protection at Pins 15 and 22
1)
VESD(HBM)
-4
4
kV
ESD HBM Protection at all other Pins
1)
VESD(HBM)
-2
2
kV
ESD CDM Protection at all Pins
2)
VESD(CDM)
-500
500
V
1)
According to AEC-Q100-002 (HBM) chip level test
2)
According to AEC-Q100-011 (CDM) chip level test
2.3 Electrical Parameters
All the following parameters are valid for an ambient operating temperature range of -40°C to 125°C (with
respect to the absolute maximum thermal power dissipation) and a supply voltage range 12V ≤ VSUP ≤ 72V,
unless otherwise specified. All voltages are referenced to GND = GNDP = GNDA
Typical values are taken with the following system conditions: VSUP=48V, Tamb= 25°C and the typical components listed in the Typical Operating Circuit BOM on page 19 unless specified otherwise. Currents flowing into
pins have positive values.
Parameter
VSUP Supply Voltage
Symbol
VVSUP
Conditions
Full Operation
Min
Typ
Max
Unit
12
24
72
V
76
V
< 0,5s per event for
< 100h total
Standby Operation
VSUP Sleep Mode Current
EN Input Voltage
IVSUP
7
V
Sleep Mode
20
25
uA
Sleep Mode, *
VVSUP=24V
15
20
uA
VEN_HIGH
High Level
2.7V
VVSUP
VEN_LOW
Low Level
0
1.3
V
EN Input Current
IEN_IN
10
uA
EN Input Debounce Time
tDEB_EN
100
us
Thermal Error Temperature*
Driver1
OTth_warn
Thermal Shutoff Temperature*
Driver
OTth_switch_off
150
175
°C
12
V
12
V
9.5
V
240
mA
5
10
Ohm
1000
1150
kHz
OTth_wa
rn+10K
DC-DC CONVERTER
VG Output Voltage
VVG
IVG > -100 mA
10
VVGstandby *
Standby Mode
IVG > -100 mA
9
VG Undervoltage Level
VPGOOD
Overcurrent Level
ILX
On Resistance LX to VSUP
RON
Switching Frequency
fswitch
8
11
8.75
160
Cont. conduction
270
1The warning temperature of the driver exceeds the maximum lifetime junction temperature of the microcontroller.
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
5/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
3.1
3.3
3.5
V
3.1
V
VDD REGULATOR
Output Voltage
VVDD
Undervoltage Threshold
VVDD_RSTD
NRST=0
IVDD = -25mA
VDDC REGULATOR
Output Voltage
VVDDC
VDDC OK Threshold
(rising edge)
VVDDC_OK_RE
VDDC Brown Out Threshold
(falling edge)
VDDC_OK_FE
1.73
1.8
1.87
V
ADC VREFH trimmed
1.45
1.55
1.65
V
ADC VREFH trimmed
1.30
1.40
1.50
V
CURRENT SENSE AMP
IP, IN Input Leakage Current
ILEAK
-1
1
uA
Input Offset Voltage
VOFFSET_AMP
-10
10
mV
Amplifier Settling Time*
tAMP
500
ns
AMP_OUT Output Resistance*
RAMP_OUT
200
Ohm
AMP_OUT Overcurrent Voltage
Level
VAMP_OUT,OC
0.95
VVDD
Overcurrent Debounce Time
tOC
300
Gain = 20, RG=18k,
0.25V<VAMP_OUT<3V
0.85
0.9
10
us
BEMF MULTIPLEXER
Divider Ratio Switching Threshold VBEMF,threshold
BEMF Voltage Divider Ratio
Latched with setting
of RUN flag
VVS,M[1..3]/VBEMF_
32
35
40
-5%
28.8
+5%
-5%
28.8
+5%
V
O
SUP Voltage Divider Ratio
VVS,M[1..3]/VBEMF_
O
BEMF Divider Ratio Mismatch
ΔVBEMF,Rel,Div
-2
2
%
GATE DRIVERS
GH/L[n] RDS on to BST/VG
RGH1-3_ON
IGH[n]=200mA
10
20
Ohm
GH/L[n] RDS on to M/GNDP
RGH1-3_OFF
IGH[n]=-200mA
5
10
Ohm
GL[n] Pulldown Resistance to
PGND
RGL1-3_OFF
Sleep Mode
10
Ohm
VDS short-circuit cutoff threshold
VDS_OFF
2.5
V
Short-circuit blanking time
Tdeb_VDS_OFF
5
us
BST[n] input current
IBST_ON
250
400
uA
DIGITAL INTERFACE
PB[6,7], PC[0-7] Input Voltage
PB[6,7], PC[0-7] Output Voltage
VDIN_HIGH
High Level
2.0V
VVDD
VDIN_LOW
Low Level
0
0.8
VOH_4
High Level,
Iload = -4mA
2.4V
VVDD
V
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
6/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.4
V
VOL_4
Low Level,
Iload = 4mA
0
Pull Up Resistance
RPU
pull up enabled
30
48
74
kOhm
Pull Down Resistance
VPD
pull down enabled
29
47
86
kOhm
NRST Output Low Voltage
VOL_4
Low Level,
Iload = 4mA
0
0.4
VNRST
NRST Pull Up Resistor
RRES_PU
VRESB = 0V
30
80
kOhm
Reference L voltage*)
VREFL
GND reference
0
2
mV
Reference H voltage
VREFH
Bandgap derived
reference
Resolution (bit)
N
Conversion rate
fCONV
Differential non-linearity
DNL
-1
3
LSB
Integral non-linearity
INL
-4
4
LSB
Input capacitance*)
CIN
3.8
5.8
pF
ON resistance of sample switch*)
RIN
300
Ohm
1.6
V
48
A-D CONVERTER
2.45
2.5
2.55
V
10
10.5
12
Bit
.86
4.8
MS/s
THERMAL MONITORING
Temperature Voltage
VTEMP
Temperature Slope*
CTEMP
ADC Channel 24,
T=25°C
1.5
1.55
-3.3
mV/K
SYSTEM OSCILLATOR
Base Frequency
FOSC_SYS
Temperature Drift
TCFOSC
T=25°C
47
48
49
MHz
-6.4
6.4
kHz/K
PROGRAMMING INTERFACE
TMODE Input Voltage
TMODE Pull Down Resistance
VTMODE_HIGH
JTAG Active
2.0 V
VVDD
VTMODE_LOW
Normal Mode
0
0.8
V
RTMOD_PD
VTMOD = 3.3V
29
86
kOhm
47
* not tested in production
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
7/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
3 Typical Operating Characteristics
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
8/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
4 Chip Interconnections
Fig. 4.1: Chip Interconnections
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Elmos Semiconductor AG
Data Sheet
9/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
5 Functional Description
The E523.52 is a programmable brush-less 3-Phase motor controller for supply voltages from 12V to 72V.
The wide operating range makes it suitable for 48V automotive, industrial and consumer applications. Operation down to 7V in Standby Mode (drivers off) allows the E523.52 to be used in 24V commercial vehicles as
well.
An integrated 11V PFM (pulse frequency mode) DC-DC buck converter provides efficient, reliable gate drive
and can supply other loads (Hall Sensors) up to a total of 100mA current. It is possible to bypass the buck
converter to reduce component cost.
The motor interface provides protection features such as under-voltage and short-circuit protection of the 6
Power FETs. An integrated current sense amp allows current control and over-current detection.
The IC incorporates an automotive rated 16bit RISC microcontroller with 32kByte of Flash Memory and
4kBytes of RAM allowing the implementation of various motor control algorithms. The following digital modules take the computational load off the CPU:
•
16x16 bit multiply and accumulate / divide
•
concurrent hardware divider
•
a table based Pre-PWM engine generates any modulation function such as SVM, flat bottom or sine
•
four 16 bit PWM generators with center and edge aligned modes and dead time insertion
•
a sophisticated ADC controller with an autonomous sample sequencer synchronized to the PWM
generators records sample sequences autonomously to memory
EN pin activates the power supplies and the microcontroller. Nine programmable IO pins provide various
interface options with the motor and the outside world. Two integrated SPI allow use of more complex communication interfaces.
The 12Bit 1MS/s successive approximation ADC can be used to sample all digital IO pins, the current sense
amplifier and the back EMF interface consisting of the three motor connectors M[1-3] and the supply voltage
SUP.
Internal temperature monitoring and a thermally efficient QFN package enable the E523.52 to operate close
to its maximum junction temperature.
5.1 Software Development and Programming
A device specific IAR Programming environment including a programming/debug interface and sample application software is available through Elmos Sales and Support.
The remainder of this datasheet will explain the general capabilities of the IC to be used as a foundation upon
which software algorithms can be based. For technical details on the microcontroller and driver included in
this device consult the following ELMOS Documents:
•
25DS0114E.xx for the B6 driver
•
03SP0418.xx for the microcontroller
5.2 Standby, Wakeup and Shutdown
The E523.52 powers up in sleep mode. In sleep mode, the IC uses lowest quiescent current, LX is high
impedance and the gate drivers GL[1-3] are driving the external gates low.
A high level at EN for at least tEN_DEB= 100us(typ) powers up the internal DC-DC converter, which supplies via
VG the internal VDD and VDDC regulators as well as the gate drivers. The system will be in standby mode
with the drivers off. The microcontroller comes out of reset and is ready to execute code.
The state of the RUN pin in the die to die interface register is critical for switching between standby Mode, run
mode and sleep mode (see Fig. Fig. 5.1). As long as the RUN flag is not set by the microcontroller, EN low
for 100us(typ) will put the IC back into sleep mode. Setting the RUN flag keeps the E523.52 active regardless
of the state of EN.
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
10/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
It is important to verify the state of EN before clearing RUN (see section 5.5.1 ). Taking the RUN flag low will,
after the RUN pin debouncing time, switch the system either into standby mode if EN is still high, or into sleep
mode if EN is low.
Fig. 5.1: Activation State Diagram
5.3 System Power
The E523.52 has three integrated power supplies which are activated by EN.
During startup the error flags ERR[1,2] are both 0b11 until VDD is ready and for at least another 500us(typ).
5.3.1 The DC-DC Converter
The DC-DC step down converter with internal compensation provides 11V(typ) at up to 100mA. An internal
switch connects VSUP to LX during the on-time of the converter. An external freewheeling diode, an inductor
and filter capacitor complete the circuit. For component selection see section 6 .
The feedback of the DC-DC converter VG is monitored for undervoltage, the driver section gets disabled if
VG drops below 8V(min) and ERR1 goes high. Power to VG and the internal supplies are maintained to allow
for proper shut-down.
The DC-DC converter uses a PFM (pulse frequency mode) algorithm which allows for low standby currents
and does not require external compensation. The switching frequency fswitch of the converter varies input voltage and load dependent but stays below 1.15 MHz(max). In standby mode, the switching behaviour will go
into burst mode and the output voltage will drop to approximately VVG_SB = 9V(min)
DC-DC Converter Bypass
For component cost reasons it may be desirable to bypass the DC-DC converter by applying an external voltage between 9.5 and 14V directly to VG and shorting LX to SUP. The inductor can then be eliminated. It is
not recommended to bypass the DC-DC converter for high operating voltages for efficiency reasons. The
total load current that need to be supplied to VG is the sum of the gate current, the external load at VDD and
the IC supply currents of up to 20mA.
5.3.2 The VDD Regulator
Power to the internal analog and digital circuitry is provided by a linear regulator supplied from VG. Its output
voltage is regulated to VVDD = 3.3V(typ), and must be buffered with an 1uF external ceramic capacitor. If the
voltage at VDD falls below the power-on reset level a high appears on flags ERR[1,2] to indicate VDD undervoltage.
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
11/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
The internal VDD regulator can be used by the application as a reference output and for pullup resistors up to
2mA total external current.
5.3.3 The VDDC Regulator
Power to the microprocessor core is provided by a 1.8V linear regulator. This regulator is supplied from VDD
and its output voltage appears at VDDC which must be buffered with an external ceramic capacitor (270nF
typ). VDDC should not be used for external loads.
5.4 The Motor Control Interface
The motor control interfaces consists of three high-side and three low-side drivers for the external power
FETs, and two microcontroller modules which help generate the commutation signals to be applied.
5.4.1 The B6 Drivers
The low-side drivers GL[1-3] are powered from VG and return the gate current to GND, the high-side drivers
GH[1-3] are powered from BST[1-3] and return the gate current to the motor connections M[1-3]. A bootstrap
circuit consisting of a diode and a capacitor can be connected to each high-side driver to supply the BST
pins. 100% duty cycle is possible within limits when using bootstrap circuit see section .
The drivers have a simple protection against short circuit of individual driver FETs and shoot through current
through one B6 branch: A simple digital lock prevents both high-side and low-side from being activated simultaneously, and if the drain to source voltage across an active FET exceeds VDS_OFF = 2.5V (typ) the branch is
turned off and over current error is asserted via a high on both error flags ERR[1,2]. See section 5.8.1 for
more detail.
5.4.2 PRE_PWM Module
The PRE_PWM module provides duty cycle and on values to the PWM3 module. The values are automatically generated by linear interpolation from a table read from flash. The current motor speed, provided by
software, controls the update of the current (estimated) electrical angle "base_phase". Together with an
ADC/software based position measurement a PLL can be realized which is synchronous to the angle of the
real motor. The base_phase is also used to generate and capture associated sync pulses bp_sync for synchronized measurements.
5.4.3 PWM[n] Module
The Motor PWM Module includes four PWM generators which share a common clock prescaler and period
counter. The following output patterns can be generated:
1. leading or trailing edge aligned patterns
2. center aligned patterns
3. free toggle mode: PWM signal is set and cleared at two independently defined points in the PWM
period
Each PWM generator has two PWM compare registers with individual pre-load registers. Each PWM channel
can control a complementary pair of outputs with a programmable dead time. Each PWM channel also has
the ability to generate interrupts at the signal and dead time transitions.
For information about PWM programming see the microcontroller section.
5.5 The Application Interface Pins
One high voltage enable input and nine general purpose IOs (GPIOs) allow communication between the
E523.52 and the application. All GPIO pins can be read in the respective registers and also routed to the following digital modules:
•
the integrated A/D converter
This document contains information on a new product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.
Elmos Semiconductor AG
Data Sheet
12/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
•
two SPI modules
•
four timer capture and compare modules
See the corresponding module descriptions in the microcontroller section for details.
5.5.1 High Voltage Enable Input EN
The high voltage EN input wakes the device from sleep mode. A high on EN must be present for 100us to be
considered valid.
EN can be monitored in two ways:
1. The voltage at EN can be connected to one of the GPIO pins. A voltage divider may have to be used
to scale the voltage level down to 3.3V (the voltage divider resistors should be in the 10kOhm range).
2. A low at EN is also communicated to the microcontroller via the BEMF interface. A low at EN will
lead to a supply voltage reading of 0. (see section 5.5.4 for details)
If EN is low and the RUN bit in the die to die Interface is not set, the IC will power down and enter sleep mode
after 100us.
5.5.2 Digital IOs PB[6,7], PC[0-7]
The digital IOs can be configured as inputs or outputs. For time critical events, such as hall signal transitions
the digital IOs can be programmed to cause an interrupt either on their rising edge, their falling edge or on
both edges. All GPIOs can multiplexed to the AD converter and/or routed to the following microcontroller
modules:
Clocks and PWM Signals
Two capture and compare timers are included in each CCT module. They can be used to generate clock signals, analyze PWM or frequency inputs and generate PWM or frequency outputs.
The IO MUX control module defines which GPIO is connected to which timer module. The timers are configured in the capture compare timer module. See the microcontroller section for details.
SPI communication
The SPI module can be used to implement serial communication with the application. The IO mux control
module defines how the GPIO pins are connected to the SPI module interface channels:
•
SCK: SPI clock (driven by master)
•
NSS: low active slave select (driven by master)
•
SDO: data out
• SDI: data in
The SPI modules can be configured to operate in master or in slave mode. The phase, polarity and bit order
can be defined and they support word bit length or multiple data word transfer. For setup see the SPI module
registers in the microcontroller section.
5.5.3 The Current Sense Amplifier
An integrated current sense amplifier helps measure the system current across a low side shunt resistor and
triggers the over-current detection. Amplifier gain and offset are designed by connecting an external resistor
network between IN, IP and AMP_OUT.
If the output voltage at AMP_OUT exceeds 90% of VDD (VAMP_OC,typ = 3.0V) the motor is shut off and an over
current error is reported. For designing information, see section 6.1.7 .
The result of the motor current measurement is mapped to GPIO Port B Bit 5 and is accessed through the
ADC multiplexer channel 14. See section 5.6.1 for details.
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Elmos Semiconductor AG
Data Sheet
13/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
5.5.4 Back-EMF Measurement
Back-EMF transition detection is done by sampling the undriven motor phase during a PWM period until the
value passes VSUP/2. This transition is used to advance the motor commutation to the next motor phase.
The E523.52 includes an integrated BEMF divider to ease this measurement.
The BEMF circuit consists of four voltage dividers, an analogue multiplexer and a buffer. The inputs are taken
from the motor phases M[1-3] and the supply voltage. For EN montitoring purposes, the supply voltage reading returns the value 0 if the EN pin has gone low.
The buffered output is connected internally to interface module B Bit4 and must be multiplexed to the ADC for
measurement. For more information see section 5.7.2 .
5.6 The Analog to Digital Converter
The microprocessor of the E523.52 includes a 1Ms/s 12 bit ADC which can be used to measure the voltages
at all GPIOs, the output of the current sense amplifier and the BEMF voltages. The ADC has direct memory
access and automatic trigger functions to be able to quickly and autonomously sample relevant system signals such as BEMF voltage, motor current, etc. The ADC control module facilitates these functions.
5.6.1 The ADC Control Module
The E523.52 implements a flexible ADC scheduling scheme which allows to set the configuration for each
ADC measurement independently. Multiple measurements can be configured in advanced as a list of sampling jobs to be executed from memory. The generated sample sequences are stored in SRAM via DMA.
For details on how to use the ADC, see the document 03SP0418.xx.
5.7 The Microcontroller
The microcontroller of the E523.52 is designed to support EC-motor commutation algorithms such as block
and sinusoidal commutation based on Back-EMF or hall sensors.
It includes the following modules:
•
16bit Harvard (H430) CPU core
•
16k x 16bit CRC protected FLASH and 4K byte parity protected SRAM
•
16Bytes of protected, user accessible memory for parametrization
•
16bit multiply and divide module
•
12Bit 1MS/s SAR ADC
•
3 x 16bit self advancing PWM generators for edge or center aligned PWM with 6 complementary *outputs
with dead-time programming
•
4 channel 16bit timer-capture and compare unit
•
GPIOs
•
integrated SPI
For detailed technical information on the microcontroller and it's periphery see 03SP0418.xx
5.7.1 Software Development and Programming
A device specific IAR Programming environment including a programming/debug interface and sample application software is available through Elmos Sales and Support.
Programming Interface
External access to the microcontroller of the E523.52 is provided through a two wire JTAG interface. The
interface lines must be connected to the device as follows:
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Elmos Semiconductor AG
Data Sheet
14/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
JTAG Line
IC Pin Name
IC Pin Number
VREF
VDD
13
TMODE
TMODE
9
TDA
PC1
2
TCK
PC0
1
NRSTI
NRST
10
5.7.2 Die to Die Interface
The E523.52 is a dual die combination of the E523.50 driver IC and the Elmos motor controller E523.99. The
following figure shows how the two IC's are interconnected.
Fig. 5.2: Internal Interconnects
The most important data signals are the six PWM lines connected to port B1/B2/B3 for the high-side gates
and to port A4/A5/A6 for the low-side gates.
The CPU can activate the high-voltage gate driver by setting the “RUN” signal connected to Port A1 to “high”.
As long as this signal is at GND, the E523.50 will not switch the gates.
Since there is no SPI interface to read out the current status of the driver, there are two error signals
“ERR1/ERR2” connected to “Port A7/B0”, that notify of any abnormal operation.
The output of the integrated operational amplifier “AMP_OUT” is hard-wired to “Port B5” and can be measured by the SARADC-module.
The E523.50 has an internal multiplexer and an internal voltage divider, making it possible to measure the
three phase voltages and the supply voltage directly as well as sample the status of then enable pin. With the
help of the two control signals “BMUX1/2”, connected to “Port A2/A3”, the multiplexer of the E523.50
switches one of the motor-phases U,V or W to the output “BEMF_O”. This output is connected to “Port B4”
and can be measured by the SARADC of the CPU.
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Data Sheet
15/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
The source can be selected via the bits BEMF_MUX1 and BEMF_MUX2 which are connected to interface
module A bits 2 and 3 in the following way:
Bit3
Bit2
Function Port Register A
MUX2
MUX1
0
0
supply voltage selected, GND if EN is low.
0
1
motor phase M1 selected
1
0
motor phase M2 selected
1
1
motor phase M3 selected
The integrated voltage dividers scale the motor phase voltages to 2.5V full scale range. The supply voltage is
always scaled by a factor of 1:28.8:
•
For all supply voltages divider ratio 1:28.8 (typ) is used (72V = 2.5V)
The gain settings are defined when the IC enters run mode. In standby mode (EN=0) the VS voltage divider
output is forced to ground.
5.8 System Errors
Two types of errors can be detected by the E523.52: errors concerning the driver/power section of the IC and
errors concerning the microcontroller.
5.8.1 Driver Errors
The E523.52 can detect and report undervoltage, overtemperature, and overcurrent and VDD undervoltage.
These errors are communicated to the error flags ERR1 and ERR2. Depending on the status of the RUN
flag, these errors are decoded as follows.
Error Type
RUN/PA1 ERR2/PB0 ERR1/PA7
Comment
No Error
High
0
0
VG Undervoltage
High
0
1
not latched
Overtemperature warning
High
1
0
not latched
Overcurrent
High
1
1
latched
X
1
1
not latched
VDD Undervoltage
The more serious errors cause ERR2 to trigger so PA7 should be used to trigger an interrupt.
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Elmos Semiconductor AG
Data Sheet
16/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Undervoltage
To protect the external FETs from operating in their linear region and experiencing thermal stress, VG is
observed. If VG falls below VVG_UV undervoltage condition is reported and the Power FETs are switched off.
Undervoltage does not affect the operation of the device supplies. Undervoltage conditions are not latched.
The error will automatically vanish when the undervoltage condition vanishes.
Over temperature
If the IC temperature exceeds 150°C, an over temperature warning is reported, the system will keep running,
but should be shut down as fast as possible. The overtemperature condition is not latched and clears on its
own once the temperature returns below the threshold. If the temperature exceeds over temperature shutdown threshold the IC will shut down its power supplies and enter sleep mode.
Fig. 5.4: Overtemperature Behavior
Overcurrent/FET short circuit
An overcurrent comparator observes the output of the current sense amp. If the voltage on AMP_OUT
exceeds VAMP_OC,typ = 3V for longer then tOC (10us typ) the drivers are turned off and an overcurrent event is
indicated. The drivers will stay off until the next rising edge on the drive control signals. Overcurrent is
latched, to clear this error, cycle the RUN flag.
Driver short circuit is detected by monitoring the voltage drop across each individual FET. If, during operation,
the voltage across a FET exceeds 2.5V(typ), the corresponding half-bridge is disabled, until RUN is cycled to
clear the error.
To differentiate between FET short circuit and overcurrent the motor phases can be observed via the BEMF
interface: A short circuit on an idividual FET results in continued switching activity at the remaining phases,
overcurrent shuts down the entire B6 bridge.
VDD Undervoltage
An undervoltage event at VDD threatens a reset of the microcontroller. Immediate shutdown (RUN=Low)
should be the response, if the ERR signals remain high a VDD undervoltage is the cause. The micro controller can use its independent BEMF measurement to do postprocessing if it still has power. If the error persists after RUN = Low, it was a VDD undervoltage event.
The VDD undervoltage signaling can also be used to check for VDD integrity before activating the system.
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Elmos Semiconductor AG
Data Sheet
17/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
5.8.2 Micro controller Errors
To allow for fail-safe operation of the E523.52, a number of microprocessor internal fault conditions cause
system errors which may either force an interrupt or a system reset:
Error Name
Effect
Explanation
Power On Reset
Reset
VDD supply rises above 2.2V(typ)
Brownout
Reset
VDD below 2.9V(max) , or VDDC below 1.5V(max)
CPU Parity
programmable
parity error in CPU register
SRAM Parity
programmable
SRAM access failed
Flash Bit corrected
programmable
Flash access has required a bit correction
Flash Bit failure
programmable
Flash access has resulted in a bit error
Protected Write
programmable
unexpected write access to a protected Flash area
Watchdog
programmable
an error is asserted if the Software fails to trigger the
watchdog timer correctly
Software
programmable
software has caused a reset event
See the document 03SP0418.xx specification for more information about these errors.
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Elmos Semiconductor AG
Data Sheet
18/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
6 Typical Application Circuit
Fig. 6.1: Typical Operating Circuit
Thin film Resistors and ceramic capacitors without rating can be 0604(metric) or larger. For more information
see “Component Selection“ below.
Symbol
Description
Type
Min
CVSUP,CER
Supply capacitance HF
ceramic
80
*
nF
100V
CVSUP
Supply capacitance LF
electrolytic
10
*
uF
0.05Ω,
100V
CVDD
VDD output capacitance
ceramic
1
uF
CVDDC
VDDC output capacitance
REN
Optional enable timing resistor
thinfilm
CEN
Optional enable timing capacitor
ceramic
220
1
Typ Max Unit
270 4700
*
100
100
Rating
Example
nF
kΩ
nF
100V
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Elmos Semiconductor AG
Data Sheet
19/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Symbol
Description
LLX
Switching inductor
DLX
Switching diode
Type
Min
120
Typ Max Unit
*
680
uH
Schottky
Rating
Example
240mA* WE74477724-26
EPC B82462A
500mA, SS1H9/MUH1PB
100V
Reverse Recovery Time
22
33
25
ns
47
uF
1
Ω
100
nF
1
Ω
CVG
Buck output capacitor
RESR_CVG
ESR of CVG
CVG,CER
VG bypass capacitor
ceramic
ROUT
DCR compensation
thinfilm
RBST
Inrush current limiter
thinfilm
10
Ω
CBST
Bootstrap capacitor
ceramic
100
nF
DBST
Bootstrap diode
bipolar
0.6
0.47 0.68
33
47
0.47 0.68
0.6
V
25V
25V
500mA, SS1H9/MUH1PB
100V
30
Ω
RGH1
Gate resistor high-side
thinfilm
100
RGH2
Gate resistor high-side pulldown
thinfilm
RGL
Gate resistor low-side
thinfilm
ML,MH
Power-MosFET
RSN
Optional snubber resistor
thinfilm
4.7
Ω
CSN
Optional snubber capacitor
ceramic
2.2
nF
RSH
Current sense shunt resistor
Metal
RO
Amplifier input offset resistor
thinfilm
RFP
Amplifier input feedback resistor
thinfilm
*
kΩ
≤1%
RFN
Amplifier input feedback resistor
thinfilm
*
kΩ
≤1%
RG
Amplifier gain resistor
thinfilm
17.25
18
kΩ
≤1%
RNRST
External NRST pullup
thinfilm
4.7
2.2
30
Meg
Ω
100
*
1
*
100V
10
IRFS4610
0.5W
mΩ ≤1%,3W
WSL3637
≤1%
100
kΩ
*See Component Selection.
6.1 Component Selection
The calculations suggested in the following section do not necessarily account for worst case parameters of
the components suggested. The user is responsible for worst case calculations by considering min. and
max. values in the corresponding datasheets.
6.1.1 Enable Threshold and Timing
It is possible to tune the activation threshold of the IC by attaching a resistor divider to EN. The E523.52 will
activate once the voltage VEN is greater than VEN_HIGH = 2.7V(min). EN has a debounce time of tEN_DEB =
100us(typ). For additional glitch filtering add a filter capacitor CEN to EN. CEN is also recommended to improve
the immunity of the application against EMI, ESD and short supply voltage transients.
6.1.2 Supply Filtering
Reverse Polarity
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Elmos Semiconductor AG
Data Sheet
20/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
The E523.52 does not have internal reverse polarity protection and has to be protected along with the rest of
the application if so desired. Several options are possible:
•
No Protection
This is a useful solution for energy recuperation where the power supply must sink and source
energy. But a reverse connection of the supply pins will most likely destroy the application and may
result in fire.
•
Diode in the supply path
This simplest method is not very well suited for motor applications as the power dissipation of a diode
is significant at higher load currents. Energy returned from the motor cannot flow back into the supply
and has to be stored locally in the bypass capacitors. Significant power surges can result and may
have to be protected against.
•
FET in the GND path
An N-Channel FET in the GND path is fairly simple to implement with a small pullup resistor from its
gate to supply. Care has to be taken in case of voltage surges and significant ground offsets can
result relative to the outside world.
•
FET in the supply path
P and N-channel FETs in the supply path are the best solution. P-Channel devices are comparatively
more expensive and N-channel FETs are more complex to control to achieve fast turn-on but also
turn-off.
The dimensioning of the electrolytic bypass capacitor is more complex. It must absorb supply surges in case
of input transients as well as energy fed back by the motor. For ETSI EN 300 132-2 surge protection at least
470uF with less than 50mOhm ESR are required to protect the E523.52 against overvoltage. This represents
the minimum size! Its rating is defined by the ripple current of the motor. The peak to peak ripple value equals
the peak motor current. It may be necessary to several capacitors in parallel to increase the overall ripple current performance.
A small HF CSUPc 100nF(typ) ceramic capacitor should be placed across the leads of CSUP to suppress fast
transients.
Energy Recuperation
In addition the bypass capacitor may have to absorb the energy returned by the motor to prevent the local
voltage from exceeding the maximum possible ratings of 72V. Worst case scenario is a motor that is actively
braking and no energy can flow back into the supply because of a reverse polarity device or a line disruption.
In that case the capacitor will have to absorb all the energy present in the motor at the beginning of breaking:
C SUP ≥
2⋅E Mot
72V 2V 2BATmax
With EMot being the mechanical energy present in the motor, and VBATmax the maximum possible supply voltage.
If the capacitance becomes too large, resistive braking with a brake chopper may be necessary.
Inrush Current Limit Surges
Hot-plugging the application into a low-ohmic high-voltage supply can lead to significant inrush current when
the on-board capacitors are charged. This will lead to arcing at the connector and may cause significant
input voltage transients at the IC beyond the absolute maximum ratings. It is recommended to limit the inrush
current into the application. See the evaluation kit schematic for a possible circuit.
6.1.3 The Step-Down Supply
Inductor selection of the switch mode power-supply depends mainly on the maximum ripple current which is
determined by the maximum input voltage. The following table gives an overview:
VVSUP
Min LLX
12 V
120 μH
24 V
150 μH
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Elmos Semiconductor AG
Data Sheet
21/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
VVSUP
Min LLX
36 V
330 μH
48 V
470 μH
60 V
560 μH
72 V
680 μH
The inductor has to be selected for a saturation current higher than the maximum peak current ILX(240mA).
When using an electrolytic capacitor choose one that has an appropriate ripple current rating. If the ESR of
the electrolytic capacitor is in the range specified in the recommended operating conditions no additional
device is required. If the ESR is lower an appropriate additional resistance is required.
If the internal step down supply is not to be used, it is possible to apply an external voltage between 9.6V and
14V directly to VG and shorting LX to VSUP. In that case, the inductor can then be eliminated. It is not recommended to bypass the DC-DC converter for operating voltages above 36V for efficiency reasons.
6.1.4 Bootstrap Circuit
The bootstrap capacitors CBST transfer their charge to the gates of the external FETs through the high-side
drivers. To be on the safe side, their capacitance CBST should be at least an order of magnitude higher than
the total gate capacitance of the external high-side FET. For smaller CBST consider the voltage drop during
charge distribution. The resulting gate voltage at the external FET VGate should stay sufficiently high and is
governed by the following equation:
C BST
V Gate =V VG V Diode ⋅
with VDiode being the forward voltage of the boostrap diodes DBST and
C BST C Gate
CGate the gate capacitance of the external FETs.
To reduce inrush currents upon activation of the IC, the bootstrap capacitors are charged through resistor
RBST and diode DBST while the motor phase M[n] is at GND potential. RBST should be at least 10 times the
series resistance of CVG.
For operation at or near 100% duty cycle a number of additional factors have to be considered. The bootstrap
capacitors will loose their charge due to the current IBSleak which is the sum of the input current on BST IBS_on,max
= 200uA(typ), gate pulldown resistance, gate leakage, and diode leakage.
Maintaining 100% duty cycle longer than
t 100%=
C BST⋅2V
may lead to low enhancement at the correI BSleak
sponding high-side switch.
6.1.5 Gate Resistors
Gate resistors act together with the intrinsic gate capacitance of the external power FETs as an RC circuit
which slows the rise and fall times of the gate voltage. Slower turn on and turn off of the power FETs reduces
the overshoot and ringing of the phase voltage, and also reduces the energy in the higher harmonics of the
switching frequency. The disadvantage of higher rise and fall times are an increase in power dissipation during switching and a reduction of efficiency.
It is also possible to modify turn on and turn off slopes independently by placing a reverse conducting diode
with a series resistor across the gate resistors.
In this case the charging current will flow through RGc, while the discharge current will flow through Rgc||RGdc.
Especially for logic level FETs with Vth<6V the additional discharge path is strongly required to prevent cross
current in the bridge.
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Elmos Semiconductor AG
Data Sheet
22/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
6.1.6 Snubber Dimensioning
A “Snubber” circuit at the motor phases will suppress the high-frequency ringing (typically in the
10MHz..100MHz range) that can occur at the rising edges of the motor phases as they switch from ground to
supply and back. This ringing is caused by a series resonant circuit of the depletion region capacitance also
called reverse-recovery capacitance CRR of the switching power FET and the trace inductances of the PCB
wiring and bond wires. For a detailed description on why and how snubber circuits work, see “Calculating
Optimum Snubbers” by Jim Hagermann (to be found on the internet). For an experimental way to determine
the snubber components follow these instructions:
1. Place a 0 Ohm resistor (short) in position of RSN and find a capacitor CTMP which reduces the ringing
frequency fR by 50%. The resonant capacitance value CRR is approximately 1/3 of CTMP.
2. The snubber resistance is then
RSN =
1
with fR being the original ringing frequency.
2  f R C RR
It would be sufficient to place RSN from the phase to GND to damp the resonant circuit, but the resulting power dissipation would be prohibitive. Therefore CSN is placed in series with RSN to block DC
currents. The 3dB cutoff frequency of the snubber circuit should now is below fR but well above the
PWM frequency fPWM.
3. CSN should now be between CRR and 3·CRR.
The power of the snubber circuit is all dissipated in RSN and can be calculated as
2
P SN =C SN⋅ f PWM⋅V VSUP
Note depending on the PCB layout and parasitic inductances of the VSUP capacitors it may be necessarry to
add one snubber network directly to each of the FETs.
6.1.7 Amplifier Dimensioning
For calculations for the current measurement it is assumed the motor current shall be measured in both
directions, allowing for energy recuperation and current limited braking as well. This means that the input of
the current measurement amplifier should have a positive offset of half the measurement range. The output
of the current amplifier is internally connected to port A5 which must be multiplexed to the internal AD converter.
Note: Always use a zero current ADC reference measurement with before turning the motor on to eliminate
offsets introduced by component parameter variations!
The first component to be chosen is the shunt resistor RSH which provides the input voltage for the current
measurement path. Its limiting factors are its power dissipation PSHmax and the value of the maximum operational motor current IMOTmax which - in block commutation - defines RSH as:
RSH ≤
P SHmax
I 2MOTmax
for sine commutation use the RMS value of IMOTmax for the power calculation!
Power dissipation should for practical reasons not exceed 3W at 85°C. The chosen shunt resistor must also
support the maximum motor current IMOTmax.
The current path gain ASH dimensioning depends on the following factors:
1. The overcurrent trip threshold VAMP_OC of the E523.52.
2. The maximum peak current IMOTpeak of the motor which should trigger overcurrent.
3. The maximum DC motor current IMOTmax which must be measured.
4. The upper threshold voltage VREFH=2.5V(typ) of the ADC.
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Elmos Semiconductor AG
Data Sheet
23/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Motor Current Measurement
Fig. 6.2: Bi-directional Current Measurement
To make optimum use of the input range of the ADC it is recommended to calculate the network such, that
the maximum motor current can still be measured. Calculate the gain as follows:
ASH =
V REFH
and the offset V SHoffs =I MOTmax⋅R shunt⋅ASH
2⋅I MOTmax⋅Rshunt
The resistor gain network with RG = 18kOhm can be calculated as such:
R FP=R FN =
RG
18k Ω
=
( ASH 1) ( ASH 1)
In order to place zero motor current in the middle of the full scale range VADC of the analog digital converter,
the voltage offset VSHoffs is applied by populating the offset pullup resistor RPP as:
R PP=
V DD
⋅ R FN  RG R FN
V SHoffs
To calculate the motor current Imot from the voltage VADC sampled by the microcontroller from AMP_OUT use
the following formula:
V ADC
R FN
⋅V DD⋅G P
ASH
with G P =
being the gain of the offset resistor network.
RFN  RPP
I mot =
RSH⋅(1G P )
Overcurrent Shutoff Level
Based on the above dimensioning suggestions, the overcurrent shutoff level IMOTpeak will be 19%(typ) higher
than the maximum DC motor current IMOTmax.
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Elmos Semiconductor AG
Data Sheet
24/31
QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
6.2 Layout Considerations
The E523.52 comes in a thermally effective QFN package. It is important to connect the exposed pad of the
package to circuit ground and using a ring of vias to have a good thermal connection into the PCB. The IC
GND pin should be connected to the ground plane directly and not through current carrying traces.
A power ground island should connect the ground terminal of the motor bypass capacitances CVSUP and
CVSUP,CER, and the ground terminal of the shunt resistor. GNDP should be connected to the power ground terminal as well. Mirroring the ground terminal to the supply layer helps with EMI issues.
Keep switching traces away from sensitive circuits and current carrying traces as wide as possible.
6.2.1 Switching Power Supply
The switching power supply consists of the EMI filter, CVG,CER, DLX, LLX, and CVG. The ground connections of
these components should be as close together as possible to keep the switching current loop small. Use a
small via grid to tie the switching ground to the PCB ground plane.
The wire loop from LX through LLX to VG should be short. The connection from CVG to VG is less critical.
6.2.2 Gate-Control Circuit
The traces connected to the pins BST[1-3], GH[1-3], M[1-3], GL[1-3] and GNDP are considered the gate control circuit. Keep the gate control circuitry traces as short and wide as possible to carry peak currents of up to
500mA. Also keep in mind that these loops will emmit HF radiation. Keep the bootstrap components CBST
close to the IC.
6.2.3 Current Sensing
The motor current is measured across a shunt resistor in the ground path of the motor. The current sense
lines on the shunt side of RFN, RFP MUST be kelvin connected to each end of the shunt resistor and should be
routed in parallel to the IC. Do NOT connect RFN to a local ground terminal by the IC. The internal OPAMP is
very fast. Place the gain network as close to the IC as possible to ensure minimum parasitics at the OPAMP
pins.
Also refer to the Evaluation Kit as a layout example.
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Data Sheet
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QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
7 Package Reference
The package is a 7x7mm QFN36 with a pin pitch of 0.65mm. It comforms to to Jedec MO-220-K, version
VHHD-4.
Fig. 7.1: Package outline
Fig. 7.2: Package dimension table
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Data Sheet
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QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
8 Record of revisions
Chapter
Rev.
-
.00
Description of change
Initial revision
Date
Released
10.11.2015
JOKR/ZOE
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Data Sheet
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QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
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9 Index
9.1 Table of contents
1 Package............................................................................................................................................................2
1.1 Pinout......................................................................................................................................................2
1.2 Pin Description.........................................................................................................................................2
2 Electrical Characteristics..................................................................................................................................4
2.1 Absolute Maximum Ratings.....................................................................................................................4
2.2 ESD Protection.........................................................................................................................................5
2.3 Electrical Parameters...............................................................................................................................5
3 Typical Operating Characteristics....................................................................................................................8
4 Chip Interconnections.......................................................................................................................................9
5 Functional Description....................................................................................................................................10
5.1 Software Development and Programming.............................................................................................10
5.2 Standby, Wakeup and Shutdown...........................................................................................................10
5.3 System Power .......................................................................................................................................11
5.3.1 The DC-DC Converter....................................................................................................................11
5.3.2 The VDD Regulator........................................................................................................................11
5.3.3 The VDDC Regulator.....................................................................................................................12
5.4 The Motor Control Interface ..................................................................................................................12
5.4.1 The B6 Drivers...............................................................................................................................12
5.4.2 PRE_PWM Module........................................................................................................................12
5.4.3 PWM[n] Module..............................................................................................................................12
5.5 The Application Interface Pins...............................................................................................................12
5.5.1 High Voltage Enable Input EN ......................................................................................................13
5.5.2 Digital IOs PB[6,7], PC[0-7]............................................................................................................13
5.5.3 The Current Sense Amplifier..........................................................................................................13
5.5.4 Back-EMF Measurement...............................................................................................................14
5.6 The Analog to Digital Converter.............................................................................................................14
5.6.1 The ADC Control Module...............................................................................................................14
5.7 The Microcontroller.................................................................................................................................14
5.7.1 Software Development and Programming.....................................................................................14
5.7.2 Die to Die Interface .......................................................................................................................15
5.8 System Errors.........................................................................................................................................16
5.8.1 Driver Errors...................................................................................................................................16
5.8.2 Micro controller Errors....................................................................................................................18
6 Typical Application Circuit..............................................................................................................................19
6.1 Component Selection.............................................................................................................................20
6.1.1 Enable Threshold and Timing........................................................................................................20
6.1.2 Supply Filtering...............................................................................................................................20
6.1.3 The Step-Down Supply..................................................................................................................21
6.1.4 Bootstrap Circuit.............................................................................................................................22
6.1.5 Gate Resistors...............................................................................................................................22
6.1.6 Snubber Dimensioning...................................................................................................................23
6.1.7 Amplifier Dimensioning..................................................................................................................23
6.2 Layout Considerations............................................................................................................................25
6.2.1 Switching Power Supply.................................................................................................................25
6.2.2 Gate-Control Circuit.......................................................................................................................25
6.2.3 Current Sensing.............................................................................................................................25
7 Package Reference........................................................................................................................................26
8 Record of revisions.........................................................................................................................................27
9 Index...............................................................................................................................................................28
9.1 Table of contents....................................................................................................................................28
Table of Figures
Fig. 1.1: 36Pin QFN 7x7 Pinout Top View..........................................................................................................2
Fig. 4.1: Chip Interconnections...........................................................................................................................9
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Data Sheet
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QM-No.: 25DS0135E.00
72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
Advance Product Information – Jan 18, 2016
Fig. 5.1: Activation State Diagram....................................................................................................................11
Fig. 5.2: Internal Interconnects..........................................................................................................................15
Fig. 5.3: Back EMF Measurement ...................................................................................................................16
Fig. 5.4: Overtemperature Behavior.................................................................................................................17
Fig. 6.1: Typical Operating Circuit....................................................................................................................20
Fig. 6.2: Bi-directional Current Measurement...................................................................................................25
Fig. 7.1: Package outline..................................................................................................................................27
Fig. 7.2: Package dimension table...................................................................................................................27
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Data Sheet
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72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
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72V PROGRAMMABLE BRUSHLESS MOTOR CONTROLLER
E523.52
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