FGH80N60FD
600 V Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild's field stop
IGBTs offer the optimum performance for induction heating,
telecom, ESS and PFC applications where low conduction and
switching losses are essential.
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Complaint
Applications
• Induction Heating, PFC, Telecom, ESS
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
ICM (1)
PD
Ratings
Unit
600
V
 20
V
80
A
@ TC = 100C
40
A
@ TC = 25C
160
A
Maximum Power Dissipation
@ TC = 25C
290
W
Maximum Power Dissipation
@ TC = 100C
116
W
Collector Current
@ TC = 25C
Collector Current
Pulsed Collector Current
TJ
Operating Junction Temperature
-55 to +150
C
Tstg
Storage Temperature Range
-55 to +150
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RJC(IGBT)
Thermal Resistance, Junction-to-Case
RJC(Diode)
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
Typ.
Max.
Unit
--
0.43
C/W
--
1
1.5
C/W
40
C/W
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
November 2013
Part Number
Top Mark
FGH80N60FDTU
FGH80N60FD
Package Packing Method
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Reel Size
Tape Width
Quantity
N/A
N/A
30
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
--
--
V
--
0.6
--
V/C
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0 V, IC = 250 uA
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
--
--
±400
nA
4.5
5.5
7.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250 uA, VCE = VGE
IC = 40 A, VGE = 15 V
--
1.8
2.4
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 125C
--
2.05
--
V
--
2110
--
pF
--
200
--
pF
--
60
--
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
--
21
--
ns
tr
Rise Time
--
56
--
ns
td(off)
Turn-Off Delay Time
--
126
--
ns
tf
Fall Time
--
50
100
ns
Eon
Turn-On Switching Loss
--
1
1.5
mJ
Eoff
Turn-Off Switching Loss
--
0.52
0.78
mJ
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
Ets
Total Switching Loss
--
1.52
2.28
mJ
td(on)
Turn-On Delay Time
--
20
--
ns
tr
Rise Time
--
54
--
ns
td(off)
Turn-Off Delay Time
--
131
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
0.78
--
mJ
Ets
Total Switching Loss
--
1.88
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
VCC = 400 V, IC = 40 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
VCE = 400 V, IC = 40 A,
VGE = 15 V
2
--
70
--
ns
--
1.1
--
mJ
--
120
--
nC
--
14
--
nC
--
58
--
nC
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
IF =20 A,
Diode Reverse Recovery Current diF / dt = 200 A/s
Qrr
Diode Reverse Recovery Charge
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
IF = 20 A
3
Min.
Typ.
Max
TC = 25C
-
2.3
2.8
TC = 125C
-
1.7
-
TC = 25C
-
36
-
TC = 125C
-
105
-
TC = 25C
-
2.6
-
TC = 125C
-
7.8
-
TC = 25C
-
46.8
-
TC = 125C
-
409
-
Unit
V
ns
A
nC
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
Electrical Characteristics of the Diode
FGH80N60FD — 600 V Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
Figure 2. Typical Saturation Voltage
Characteristics
160
o
o
15V
TC = 25 C
TC = 125 C
12V
120
10V
80
40
0
VGE = 8V
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
12V
120
10V
80
40
VGE = 8V
0
10
Figure 3. Typical Saturation Voltage
Characteritics
0
10
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
TC = 25 C
o
TC = 25 C
120
120
Collector Current, IC [A]
Collector Current, IC [A]
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
160
o
TC = 125 C
80
40
o
TC = 125 C
80
40
0
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
2
6
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
3.0
20
80A
2.5
40A
2.0
20A
1.5
Common Emitter
VGE = 15V
50
75
100
125
o
FGH80N60FD Rev. C2
Common Emitter
o
16
12
8
40A
4
80A
IC = 20A
Case Temperature, TC [ C]
©2007 Fairchild Semiconductor Corporation
12
TC = 25 C
0
1.0
25
4
6
8
10
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. Vge
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
15V
20V
Collector Current, IC [A]
Collector Current, IC [A]
20V
4
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
(Continued)
Figure 7. Saturation Voltage vs. Vge
Figure 8. Capacitance Characteristics
5000
20
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
4000
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
12
8
o
TC = 25 C
Ciss
3000
Coss
2000
40A
4
1000
80A
Crss
IC = 20A
0
0.1
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Gate Charge Characteristics
1
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
400
15
Common Emitter
10s
100
Vcc = 100V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
12
200V
300V
9
6
3
100s
10
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0
0
50
100
Gate Charge, Qg [nC]
1
150
Figure 11. Turn-Off Switching SOA
Characteristics
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
200
100
Switching Time [ns]
Collector Current, IC [A]
100
10
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
td(on)
10
o
TC = 25 C
Safe Operating Area
o
o
TC = 125 C
VGE = 20V, TC = 100 C
1
1
10
5
100
0
1000
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
10
20
30
40
50
Gate Resistance, RG []
Collector-Emitter Voltage, VCE [V]
5
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
Figure 14. Turn-On Characteristics vs.
Collector Current
200
2000 Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
1000
o
100
o
o
TC = 125 C
td(off)
100
tf
20
30
40
td(on)
50
40
60
80
Collector Current, IC [A]
Gate Resistance, RG []
Figure 15. Turn-Off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs Gate Resistance
5
500
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
o
TC = 25 C
IC = 40A
o
o
TC = 125 C
Switching Loss [mJ]
Switching Time [ns]
tr
o
10
20
10
10
TC = 25 C
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 25 C
0
Common Emitter
VGE = 15V, RG = 10
td(off)
100
tf
20
20
40
60
TC = 25 C
o
TC = 125 C
Collector Current, IC [A]
Eoff
1
0.3
0
80
Eon
10
20
30
40
Gate Resistance, RG []
50
Figure 17. Switching Loss vs Collector Current
10
Common Emitter
VGE = 15V, RG = 10
Eon
o
Switching Loss [mJ]
TC = 25 C
o
TC = 125 C
Eoff
1
0.1
20
40
60
80
Collector Current, IC [A]
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
6
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
Typical Performance Characteristics
FGH80N60FD — 600 V Field Stop IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 19. Forward Characteristics
Figure 20. Stored Charge
600
Stored Recovery Charge , Qrr [nC]
Forward Current , IF [A]
100
o
TC = 125 C
10
o
TC = 75 C
o
TC = 25 C
1
500
400
300
200
1
2
3
Forward Voltage , VF [V]
0
100
4
300
400
20
Reverse Recovery Current, Irr [A]
Reverse Recovery Time, trr [ns]
200
Figure 22. Reverse Recovery Current
140
120
o
125 C
80
60
o
40
25 C
20
100
5
200
300
©2007 Fairchild Semiconductor Corporation
15
10
o
125 C
5
o
25 C
0
5
100
400
200
300
400
di/dt, [A/ s]
di/dt, [A/s]
FGH80N60FD Rev. C2
25 C
di/dt ,[A/s]
Figure 21. Reverse Recovery Time
100
o
100
0.1
0
o
125 C
7
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
Mechanical Dimensions
Figure 23. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
8
www.fairchildsemi.com
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2007 Fairchild Semiconductor Corporation
FGH80N60FD Rev. C2
9
www.fairchildsemi.com
FGH80N60FD — 600 V Field Stop IGBT
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