2N2219A
2N2222A
®
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
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TO-18
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TO-39
INTERNAL SCHEMATIC DIAGRAM
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ABSOLUTE MAXIMUM RATINGS
Symbol
V CBO
V CEO
V EBO
IC
I CM
P tot
T stg
Tj
Parameter
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Total Dissipation at T amb ≤ 25 o C
for 2N2219A
for 2N2222A
at T C ≤ 25 o C
for 2N2219A
for 2N2222A
Storage Temperature
Max. Operating Junction Temperature
February 2003
Value
75
40
6
0.6
0.8
Unit
V
V
V
A
A
0.8
0.5
W
W
3
1.8
W
W
-65 to 175
175
o
o
C
C
1/7
2N2219A / 2N2222A
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
TO-39
TO-18
50
187.5
83.3
300
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 60 V
V CB = 60 V
I CEX
Collector Cut-off
Current (V BE = -3V)
V CE = 60 V
I BEX
Base Cut-off Current
(V BE = -3V)
V CE = 60 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 3 V
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 10 µA
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
V (BR)CBO
Min.
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V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
0.6
I C = 0.1 mA
V CE = 10 V
I C = 1 mA
V CE = 10 V
I C = 10 mA
V CE = 10 V
I C = 150 mA
V CE = 10 V
I C = 500 mA
V CE = 10 V
I C = 150 mA
V CE = 1 V
I C = 10 mA
V CE = 10 V
T amb = -55 o C
35
50
75
100
40
50
O
)
(s
nA
10
nA
du
V
0.3
1
V
V
1.2
2
V
V
300
35
hfe ∗
Small Signal Current
Gain
I C = 1 mA
I C = 10 mA
fT
Transition Frequency
I C = 20 mA
f = 100 MHz
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = 0.5 V
f = 100KHz
25
pF
C CBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
8
pF
R e(hie)
Real Part of Input
Impedance
I C = 20 mA
f = 300MHz
60
Ω
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/7
20
V
I B = 15 mA
I B = 50 mA
bs
nA
6
I C = 150 mA
I C = 500 mA
t
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10
V
Collector-Emitter
Saturation Voltage
r
P
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nA
µA
40
V CE(sat) ∗
od
10
10
o
r
P
75
I E = 10 µA
DC Current Gain
Unit
)
s
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ct
Emitter-Base
Breakdown Voltage
(I C = 0)
h FE ∗
Max.
T j = 150 o C
V (BR)EBO
t
c
u
Typ.
V CE = 10 V
V CE = 10 V
f = 1KHz
f = 1KHz
V CE = 20 V
V CE = 20 V
50
75
300
375
300
MHz
2N2219A / 2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
NF
Noise Figure
I C = 0.1 mA V CE = 10 V
f = 1KHz
R g = 1KΩ
hie
Input Impedance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
h re
Reverse Voltage Ratio
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
h oe
Output Admittance
I C = 1 mA
I C = 10 mA
V CE = 10 V
V CE = 10 V
t d ∗∗
Delay Time
V CC = 30 V
I B1 = 15 mA
I C = 150 mA
V BB = -0.5 V
t r ∗∗
Rise Time
V CC = 30 V
I B1 = 15 mA
I C = 150 mA
V BB = -0.5 V
t s∗∗
Storage Time
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
t f ∗∗
Fall Time
V CC = 30 V
I C = 150 mA
I B1 = -IB2 = 15 mA
Feedback Time
Constant
I C = 20 mA V CE = 20 V
f = 31.8MHz
r bb’ C b’c
Min.
Typ.
Max.
4
2
0.25
Unit
dB
8
1.25
kΩ
kΩ
8
4
10 -4
-4
10
35
200
µS
µS
5
25
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Pr
10
ns
25
ns
225
ns
60
ns
150
ps
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b
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See test circuit
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3/7
2N2219A / 2N2222A
Test Circuit fot td, tr.
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PULSE GENERATOR :
tr ≤ 20 ns
PW ≤ 200 ns
ZIN = 50 Ω
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TO OSCILLOSCOPE
tr ≤ 5.0 ns
ZIN < 100 KΩ
CIN ≤ 12 pF
)
(s
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Test Circuit fot td, tr.
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PULSE GENERATOR :
PW ≈ 10 µs
ZIN = 50 Ω
TC ≤ 5.0 ns
4/7
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 KΩ
CIN ≤ 12 pF
2N2219A / 2N2222A
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
0.500
B
0.49
D
5.3
E
4.9
F
5.8
G
0.019
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0.208
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2.54
0.100
H
1.2
I
1.16
)-
45o
L
MAX.
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0.193
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0.228
0.047
0.045
45o
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D
G
A
I
E
F
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B
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C
0016043
5/7
2N2219A / 2N2222A
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
MAX.
0.500
B
0.49
D
6.6
E
8.5
F
9.4
G
TYP.
0.019
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s
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ct
0.260
du
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ol
5.08
0.200
H
1.2
I
0.9
)-
L
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0.334
0.370
0.047
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0.035
45o (typ.)
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D
G
A
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F
H
B
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P008B
6/7
2N2219A / 2N2222A
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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