2N2905A
2N2907A
®
SMALL SIGNAL PNP TRANSISTORS
DESCRIPTION
The 2N2905A and 2N2907A are silicon Planar
Epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated switching and general purpose
applications.
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TO-18
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TO-39
INTERNAL SCHEMATIC DIAGRAM
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ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
V CEO
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
-60
-60
V
V
V EBO
IC
Emitter-Base Voltage (I C = 0)
Collector Current
-5
-0.6
V
A
I CM
Collector Peak Current (t p < 5 ms)
-0.8
A
P tot
Total Dissipation at T amb ≤ 25 o C
for 2N2905A
for 2N2907A
at T C ≤ 25 o C
for 2N2905A
for 2N2907A
Storage Temperature
0.6
0.4
W
W
3
1.8
W
W
T stg
Tj
Parameter
Max. Operating Junction Temperature
February 2003
-65 to 175
o
C
175
o
C
1/7
2N2905A/2N2907A
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
TO-39
TO-18
50
250
83.3
375
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-10
-10
nA
µA
-50
nA
-50
nA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = -50 V
V CB = -50 V
I CEX
Collector Cut-off
Current (V BE = 0.5V)
V CE = -30 V
I BEX
Base Cut-off Current
(V BE = 0.5V)
V CE = -30 V
Collector-Base
Breakdown Voltage
(I E = 0)
I C = -10 µA
-60
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = -10 mA
r
P
e
V
-5
V
V (BR)CBO
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = -10 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
h FE ∗
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V
V
V
I C = -150 mA
I C = -500 mA
I B = -15 mA
I B = -50 mA
-1.3
-2.6
V
V
IC
IC
IC
IC
IC
V CE = -10
V CE = -10
V CE = -10
V CE = -10
V CE = -10
)
(s
=
=
=
=
=
-0.1 mA
-1 mA
-10 mA
-150 mA
-500 mA
V CE = -20 V
I C = -50 mA
Emitter-Base
Capacitance
IC = 0
V EB = -2 V
Collector-Base
Capacitance
IE = 0
V CB = -10 V
t d ∗∗
Delay Time
V CC = -30 V
I B1 = -15 mA
t r ∗∗
Rise Time
V CC = -30 V
I B1 = -15 mA
t s∗∗
t f ∗∗
t
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o
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-0.4
-1.6
Transition Frequency
V
V
V
V
V
f = 100 MHz
300
200
MHz
pF
8
pF
I C = -150 mA
10
ns
I C = -150 mA
40
ns
Storage Time
V CC = -6 V
I C = -150 mA
I B1 = -IB2 = -15 mA
80
ns
Fall Time
V CC = -6 V
I C = -150 mA
I B1 = -IB2 = -15 mA
30
ns
t on ∗∗
Turn-on Time
V CC = -30 V
I B1 = -15 mA
45
ns
t off ∗∗
Turn-off Time
V CC = -6 V
I C = -150 mA
I B1 = -IB2 = -15 mA
100
ns
s
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C CBO
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
** See test circuit
f = 1MHz
75
100
100
100
50
30
C EBO
2/7
-60
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s
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ct
I B = -15 mA
I B = -50 mA
t
c
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DC Current Gain
T j = 150 o C
f = 1MHz
I C = -150 mA
2N2905A/2N2907A
Normalized DC Current Gain.
Collector Emitter Saturation Voltage.
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Collector Base and Emitter-base capacitances.
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Switching Characteristics.
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3/7
2N2905A/2N2907A
Test Circuit for ton, tr, td.
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PULSE GENERATOR :
tr ≤ 2.0 ms
Frequency = 150 Hz
Zo = 50 Ω
t
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TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 10 MΩ
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Test Circuit for toff, to, tf.
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PULSE GENERATOR :
tr ≤ 2.0 ns
Frequency = 150 Hz
Zo = 50 Ω
4/7
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 MΩ
2N2905A/2N2907A
TO-18 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
0.500
B
0.49
D
5.3
E
4.9
F
5.8
G
0.019
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0.208
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ol
2.54
0.100
H
1.2
I
1.16
)-
45o
L
MAX.
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0.193
o
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P
0.228
0.047
0.045
45o
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A
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0016043
5/7
2N2905A/2N2907A
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
MAX.
0.500
B
0.49
D
6.6
E
8.5
F
9.4
G
TYP.
0.019
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ct
0.260
du
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5.08
0.200
H
1.2
I
0.9
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L
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0.334
0.370
0.047
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0.035
45o (typ.)
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P008B
6/7
2N2905A/2N2907A
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