ECE351 Darlington Push-Pull
Amplifier Design
Specify the Design Parameters.
RL := 8 ⋅ ohm
Load Resistance
Minimum power to load
Load tolerance 5%
RLtol := 0.05
PL := 4 ⋅ watt
Minimum Load Resistance
RLmin := RL⋅ ( 1 − R Ltol)
Maximum Load resistance
RLmax := RL⋅ ( 1 + RLtol)
Specity the available power supply
VCC := 15⋅ volt
Find the worst case peak current to the load needed to deliver the specified power.
ILpeak :=
2 ⋅ PL
RLmin
ILpeak = 1.026 amp
Find the worst case peak voltage across the load needed to deliver the specified power.
VLpeak :=
2 ⋅ RLmax⋅ PL
VLpeak = 8.198 volt
Assume the collector current through transistor U1A is ILpeak. Find the Tx specs.
ILpeak = 1.026 amp
For the TIP31 at
h FE1min := 25 VBE1on := 1.8⋅ volt
VCE1sat := 1.2⋅ volt
Find the worst case peak base current through transistor Q1
IB1peak :=
ILpeak
(hFE1min + 1)
IB1peak = 39.461 mA
Assume that IB1peak is approximately the collector current of Tx Q3. Find the Tx specs.
IC2peak := IB1peak
IC2peak = 39.461 mA
For thr 2N3904 at
h FE2min := 60
VCE2sat := 0.3⋅ volt
VBE2sat := 0.95⋅ volt
Note: Vbe was not specified
at 40 mA, We will assume
it has a value close to the
specified value at 50 mA.
Calculate the peak base current of Tx U3A.
IB2peak :=
IB1peak
(hFE2min + 1)
IB2peak = 646.897 µA
This current must be supplied
through Rb.
Calculate the Peak voltage at the base of Q3.
Specify a 5% value for the emitter resistor.
REmax := RE⋅ 1.05
RE := 1 ⋅ Ω
REmin := RE⋅ 0.95
VBpeak := ILpeak⋅ ( REmax + RLmax) + VBE1on + VBE2sat
Calculate an upper limit on a 5 % resistor for RB.
VCC− VBpeak
RB :=
IB2peak
( 1.05)
VBpeak = 12.445 volt
RB must be less than
RB = 3.761 kΩ
RB := 3.3⋅ kΩ
Choose a standard 5% resistor for RB.
Calculate the power dissipated by the various elements.
The power supplied by Vcc is
PVcc :=
1
π
⋅ VCC⋅ ILpeak
PVcc = 4.899 watt
Find the max and min power dissipated by each resistor.
PREmax :=
1
PREmin :=
1
4
4
2
PREmax = 0.276 watt
2
PREmin = 0.25 watt
⋅ ILpeak ⋅ R Emax
⋅ ILpeak ⋅ REmin
PRLmax :=
1
PRLmin :=
1
4
4
2
PRLmax = 2.211 watt
2
PRLmin = 2 watt
⋅ ILpeak ⋅ R Lmax
⋅ ILpeak ⋅ RLmin
Calculate the max power dissipated by the U1A.
Ptip := PVcc − PRLmin − PREmin
Ptip = 2.649 watt
P.RLmin is only 1/2 the
power spec because this
is the power supplied to RL from
Vcc. The other half comes from
Vee.
Order this document
by TIP31A/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general purpose amplifier and switching applications.
• Collector–Emitter Saturation Voltage —
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) — TIP31B, TIP32B
VCEO(sus) = 100 Vdc (Min) — TIP31C, TIP32C
• High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO–220 AB Package
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
TIP31A
TIP32A
TIP318
TIP32B
TIP31C
TIP32C
Unit
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
3.0
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
40
0.32
Watts
W/_C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
2.0
0.016
Watts
W/_C
E
32
mJ
TJ, Tstg
– 65 to + 150
_C
Max
Unit
Unclamped Inductive
Load Energy (1)
Operating and Storage Junction
Temperature Range
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 – 100 VOLTS
40 WATTS
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
Thermal Resistance, Junction to Case
RθJC
3.125
_C/W
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
3–1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
60
80
100
—
—
—
—
—
—
0.3
0.3
0.3
—
—
—
200
200
200
IEBO
—
1.0
mAdc
hFE
25
10
—
50
—
VCE(sat)
VBE(on)
—
1.2
Vdc
—
1.8
Vdc
fT
hfe
3.0
—
MHz
20
—
—
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
TIP31A, TIP32A
TIP31B, TIP31C
TIP32B, TIP32C
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
ICEO
Vdc
µAdc
ICES
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
PD, POWER DISSIPATION (WATTS)
TC
40
TA
4.0
30
3.0
20
2.0
10
1.0
0
0
2.0%.
TC
TA
0
20
40
60
100
80
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
TURN–ON PULSE
APPROX
+11 V
APPROX
+11 V
SCOPE
0.7
0.5
RB
t1
t3
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
t2
TURN–OFF PULSE
IC/IB = 10
TJ = 25°C
1.0
Vin
Vin
– 4.0 V
DUTY CYCLE ≈ 2.0%
APPROX – 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
3–2
2.0
RC
t, TIME ( µs)
Vin 0
VEB(off)
VCC
0.3
tr @ VCC = 30 V
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
td @ VEB(off) = 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
3.0
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
N
Discrete Power & Signal
Technologies
2N3904
MMBT3904
C
E
C
B
TO-92
SOT-23
E
B
Mark: 1A
MMPQ3904
E
B
E
B
E
B
SOIC-16
E
PZT3904
B
C
C
C
C
C
C
C
C
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
I C = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
I C = 10 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I E = 10 µA, I C = 0
6.0
V
IBL
Base Cutoff Current
VCE = 30 V, VEB = 0
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VEB = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
70
100
60
30
0.65
300
0.2
0.3
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure (except MMPQ3904)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
300
MHz
4.0
pF
8.0
pF
5.0
dB
35
ns
SWITCHING CHARACTERISTICS (except MMPQ3904)
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
tr
Rise Time
I C = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
200
ns
tf
Fall Time
I B1 = IB2 = 1.0 mA
50
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
2N3904 / MMBT3904 / MMPQ3904 / PZT3904
NPN General Purpose Amplifier
2N3906
MMBT3906
C
E
C
B
TO-92
SOT-23
E
PZT3906
MMPQ3906
E
B
Mark: 2A
B
E
SOIC-16
B
E
E
B
C
B
C
C
C
C
C
C
C
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
200
mA
TJ, T stg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3906 / MMBT3906 / MMPQ3906 / PZT3906
N
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, I B = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
IBL
Base Cutoff Current
VCE = 30 V, V BE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, V BE = 3.0 V
50
nA
V
ON CHARACTERISTICS
hFE
DC Current Gain *
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 0.1 mA, V CE = 1.0 V
IC = 1.0 mA, V CE = 1.0 V
IC = 10 mA, V CE = 1.0 V
IC = 50 mA, V CE = 1.0 V
IC = 100 mA, V CE = 1.0 V
IC = 10 mA, I B = 1.0 mA
IC = 50 mA, I B = 5.0 mA
IC = 10 mA, I B = 1.0 mA
IC = 50 mA, I B = 5.0 mA
60
80
100
60
30
0.65
300
0.25
0.4
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
NF
Noise Figure (except MMPQ3906)
SWITCHING CHARACTERISTICS
IC = 10 mA, V CE = 20 V,
f = 100 MHz
VCB = 5.0 V, I E = 0,
f = 100 kHz
VEB = 0.5 V, I C = 0,
f = 100 kHz
IC = 100 µA, V CE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
250
MHz
4.5
pF
10.0
pF
4.0
dB
35
ns
(except MMPQ3906)
td
Delay Time
VCC = 3.0 V, V BE = 0.5 V,
tr
Rise Time
IC = 10 mA, I B1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, I C = 10mA
225
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
75
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4
Vtf=4 Xtf=6 Rb=10)
2N3906 / MMBT3906 / MMPQ3906 / PZT3906
PNP General Purpose Amplifier
5
4
3
2
1
D
D
15.00V
Vcc
Vcc
+
+
RB1
V2
3.3k
-
1.295V
Q3
+
Q2N3904
V3
Q1
D1N4001
C
D2
668.6mV
RE1
50.84mV
RE2
D1N4001
D4
-653.4mV
-1.300V
Q2N3906
C
Vee
+
+
D3
0
DC = 15
Vo
1
-2.496mV
D1N4001
-651.5mV
TIP31
D1
D1N4001
-
+
646.5mV
DC = 15
Load
8
1
0
Q2
TIP32
Q4
B
B
+
RB2
3.3k
-15.00V
Vee
ECE Department
5500 Wabash Avenue
Terre Haute, IN 47803
Ph: (812) 877-8512
FAX: (253) 369-9536
A
Name: Marc E. Herniter
Size
Document Name
A
Class: ECE 351
Rev
1
<Project Name>
Date:
5
4
3
Thursday, January 17, 2002
2
A
Sheet
of
1
1
1
5
4
3
2
1
D
D
Vcc
Vcc
+
+
RB1
V2
Q3
3.3k
-
DC = 15
+
Q2N3904
V3
Q1
D1N4001
TIP31
D1
C
-
0
DC = 15
C
+
D1N4001
+
Vo
D1N4001
V4
D3
AMPLITUDE = 9.5
FREQUENCY = 1k
+
-
Vo
1
+
Transient
Analysis
Vin
Vee
RE1
D2
RE2
D1N4001
D4
Load
8
1
0
Q2
0
Q2N3906
TIP32
Q4
B
B
+
RB2
3.3k
Vee
ECE Department
5500 Wabash Avenue
Terre Haute, IN 47803
Ph: (812) 877-8512
FAX: (253) 369-9536
A
Name: Marc E. Herniter
Size
Document Name
A
Class: ECE 351
Rev
1
<Project Name>
Date:
5
4
3
Thursday, January 17, 2002
2
A
Sheet
of
1
1
1
** Profile: "SCHEMATIC1-Transient" [ C:\Website\Rose_Classes\ECE351\Homework\Winter01-2\HW5\darlington ...
Date/Time run: 01/17/02 12:30:41
Temperature: 27.0
(A) darlington push-pull amplifier-SCHEMATIC1-Transient.dat (active)
2.0A
1.0A
Load Current
0A
-1.0A
-2.0A
0s
0.5ms
1.0ms
1.5ms
2.0ms
I(Load)
Date: January 17, 2002
Time
Page 1
Time: 12:32:28
** Profile: "SCHEMATIC1-Transient" [ C:\Website\Rose_Classes\ECE351\Homework\Winter01-2\HW5\darlington ...
Date/Time run: 01/17/02 12:30:41
Temperature: 27.0
(B) darlington push-pull amplifier-SCHEMATIC1-Transient.dat (active)
10V
Input and Output Voltages
5V
0V
-5V
-10V
0s
V(Vo)
0.2ms
0.4ms
V(Vin)
Date: January 17, 2002
0.6ms
0.8ms
1.0ms
Time
Page 2
1.2ms
1.4ms
1.6ms
1.8ms
2.0ms
Time: 12:32:28
+
V2
DC = 15
Q1
TIP31
0
+
-
DC = 40m
V3
DC = 15
D1
D1N4001
Vo
+
D2
D1N4001
R1
8
0
Q3
Q2N3906
Vin
Q2
TIP31
Transient
Analysis
-
I1
+
V1
AMPLITUDE = 10
FREQUENCY = 1k
-
0
** Profile: "SCHEMATIC1-Trans" [ C:\Documents and Settings\herniter\My Documents\Website\Rose_Classes\EC...
Date/Time run: 01/19/06 09:25:36
Temperature: 27.0
(A) Trans.dat (active)
12V
8V
4V
0V
-4V
-8V
-12V
0s
1.0ms
V(Vin)
2.0ms
3.0ms
4.0ms
5.0ms
V(Vo)
Date: January 19, 2006
Time
Page 1
Time: 09:27:13