Research at Photonics Laboratories (High-Speed Electronics Circuit and Device - 3) 8 × 8 Switch Matrix IC using InP HEMTs for 10-Gbit/s Systems Electrical switches are key devices for broadband between ITLs (from 784 to 196). In addition, we used InP communications systems and measurement systems. A critical high electron mobility transistors (HEMTs) as the cold FETs. issue to making a large-capacity switch is how to increase the Compared with silicon (Si)- or GaAs-based FETs, these have port count without increasing power consumption. A cold- less than half the ON-resistance OFF-capacitance product, FET switch is very attractive since it dissipates virtually which allows us to build a wideband (dc-13GHz) switch. Figure zero power. However, no switch matrix IC using cold FETs 2 shows the eight output waveforms from the IC (Out#1∼ with port counts of over 4 × 4 has been reported to date. #8) when eight 10-Gbit/s data signals were simultaneously This is because a conventional n × n switch matrix consists input to In#1∼#8. Clear eye openings are apparent for all of as many as 2n 1 × n switches and n2 interconnection eight outputs. Error-free operation up to 12.5 Gbit/s was transmission lines (ITLs) between the switches. confirmed. Figure 1 shows the 8 × 8 switch IC we developed. Its 2 The switch IC will likely be extensively used not only for area (0.4 mm ) is only about 6% the area of the conventional 10-Gbit/s systems but also for wideband wireless systems configuration, thanks to the use of a novel size-reduction and measurement systems, since it is an analog switch with technique that requires half number of 1 × 8 switches (from virtually zero power dissipation. 16 to 8), fewer ITLs (from 64 to 40) and fewer crossovers In#4 In#3 In#2 In#1 1 × 8 SW 1 × 8 SW 1 × 8 SW 1 × 8 SW Out#1 (from In#8) Out#1 Out#2 Out#3 Out#2 (from In#7) Out#4 Out#5 Out#6 1 × 8 SW 1 × 8 SW 1 × 8 SW 1 × 8 SW In#5 In#6 In#7 In#8 Out#3 (from In#6) Out#7 Out#8 Out#4 (from In#5) (a) Configuration of 8 x 8 switch matrix In#4 In#3 In#2 Out#5 (from In#4) In#1 Out#1 Out#6 (from In#3) Out#2 Out#3 Out#4 1 × 8 SW Out#7 (from In#2) Out#5 Out#6 Out#7 Out#8 (from In#1) Out#8 In#5 In#6 In#7 In#8 (b) 8 × 8 switch matrix IC (0.98 mm × 0.41 mm) Fig. 1 Configuration and microphotograph of 8 × 8 switch matrix IC. Fig. 2 Output waveforms when eight 10-Gbit/s data signals are input. 500 mV/div., 50 ps/div. All what we provide on this site are retained by Nippon Telegraph and Telephone Corporation (“NTT”), its subsidiaries and/or any third party owner of such rights. NTT names and logos and all related products and service names, design marks and slogans are trademarks and service marks owned by and used under license from NTT. 1) You may use, copy and distribute the materials found on NTT Homepage for internal, noncommercial, informational purposes only. All copies that you make of the material must bear any copyright, trademark or other proprietary notice located on the site which pertain to the material being copied. 2) You are not authorized to use any copyright, trademark, patent or other intellectual property right in the material or the products, services without the prior written consent of NTT. Copyright© 2007 Nippon Telegraph and Telephone Corporation