TowerJazz High Performance
SiGe BiCMOS processes
2
Comprehensive Technology Portfolio
0.50
µm
0.35
µm
0.25
µm
0.18/0.16/0.152
µm
0.13
0.13µm
µm
BiCMOS, SiGe
SiGe
SiGe
SiGe
Power/BCD
BCD
BCD
Power/BCD
Image Sensor
Image Sensor
(X-Ray & Visible)
(X-Ray & Visible)
Image Sensor
(X-Ray & Visible)
eNVM
Mixed-Signal
Digital CMOS
eNVM
RFCMOS
RFCMOS and SOI
CMOS
RFCMOS and SOI
CMOS
Mixed-Signal
Digital CMOS
Mixed-Signal
Digital CMOS
Mixed-Signal
Digital CMOS
3
RFCMOS and SOI
CMOS
Mixed-Signal
Digital CMOS
RF and HPA Applications and Technology
RF and Tuners
Front-End Modules
RF CMOS and SiGe BiCMOS
 Cell Phone, WiFi TxRx
 Basestation, Specialty Wireless
 TV, Satellite, STB Tuners
SOI Switch and SiGe Power Amplifiers
 Power Amplifiers
 Antenna Switch
 PA Controllers
mmWave
High Performance Analog
High Performance SiGe
 Optical Fiber Networks
 Automotive Radar
 60 GHz WiFi, 24GHz Backhaul
 Light Peak and Thunderbolt
 GPS LNA
Complementary BiCMOS
 Line Drivers DSL, HomePlug, ATE
 HDD PreAmp
 DAC, ADC
Best-in-class SiGe, RF CMOS, RF models and Design Enablement
4
4
Front-End Module Technology
Controller
SOI Switch
RF CMOS Controller Platform
 5V, 0.18um optimized CMOS
 Up to 50% die size shrink vs. 0.25um
 1.8V Logic, Bipolar, LDMOS options
Platform for integration of FEM
 Thin-Film SOI (best in class Ron-Coff)
 Thick-Film SOI for ease of integration
 5V control, LNA, PA/Driver options
Power Amplifier
Design Services and IP
SiGe PA, through-silicon-via (TSV), IPD
 SiGe PA cells for WiFi and Cellular
 TSV for low-inductance ground
 1.8/3.3/5V CMOS, high res options
 IPD (5um dual-Cu in development)
Models, design tools and IP
 Example: PA Design Library (PADL)
 Example: 4T, 6T, 9T SOI Switch IP
 Analog / RF Design Services
Best-in-class SiGe, RF CMOS, RF models and Design Enablement
5
5
Schematic of Key Features in SiGe BiCMOS platform
 The SiGe HBJTs are embedded into complimentary
BiCMOS platforms offering high performance RF , analog
and digital performances.
6
SiGe HBJT device structure
 The high-performance bipolar transistors are built “vertically”
meaning that the n-p-n structure is created perpendicularly from
the top of the wafer down.
7
TowerJazz High Speed SiGe Processes
SBC18HA
SBC18H2
SBC18H3
SBC13HA
SBC13H3
Prod.
Prod.
Proto.
Proto.
Devel.
Voltages
1.8/3.3V
1.8/3.3V
1.8/3.3V
1.2/3.3V
1.2/3.3V
FT (GHz)
150
200
240
200
240
FMAX (GHz)
190
200
270
200
270
BVCEO (V)
2.2
1.9
1.6
1.9
1.6
Capacitor
fF/µm2
2.8/5.6
2/4
2.8/5.6
2.8/5.6
2.8/5.6
Varactor
Q at 20 GHz
10
NA
15
NA
15
LPNP
Beta
32
7
30
7
30
Status
CMOS
HS Bipolar
 There are numerous other SBC18 flavors in production with
variations in back end configuration, selection of available
devices etc.
Presented data mainly from the SBC18H2/H3 flavors.
8
SiGe HBJT’s current and power gain
3µm Emitter 122 Device
3µm Emitter 122 Device
300
250
200
250
SBC18H2
SBC18H3
SBC18H2
SBC18H3
FMAX (GHz)
VCB = 0.5V
PEAK
FMEAS=20GHz
100
FT
PEAK
(GHz)
200
150
50
VCB = 0.5V
150
FMEAS=20GHz
100
50
0
0
0.1
1
10
2
JC (mA/µm )
0.1
1
10
2
JC (mA/µm )
 240 GHz Ft / 270 GHz Fmax devices in mass production.
 High frequency performances sustained for wide collector
current range.
9
SiGe HBJT’s gain vs DC power density
20
SBC18H2
SBC18H3
20
SBC18H2
SBC18H3
UG at 28GHz (dB)
h21 at 28GHz (dB)
15
10
5
15
10
70% Lower Power
35% Lower Power
5
0
0.1
1
10
2
DC Power Density (mW/µm )
0.1
1
2
10
DC Power Density (mW/µm )
 TowerJazz Devices are optimized for low power consumption.
10
SiGe HBJT’s Noise
0.13x20 µm Single Emitter, Dual Base, Dual Collector
10
3.0
9
SBC18H2
SBC18H3
8
2.5
2.0
6
NFMIN (dB)
NFMIN (dB)
7
5
4
3
-1.3dB
2
40 GHz
1.5
32 GHz
1.0
20 GHz
8 GHz
0.5
1
0.0
0
0
10
20
30
40
50
60
70
Frequency (GHz)
80
90 100
0
2
4
6
8
10
12
14
16
18
IC (mA)
 SBC18H4 minimum noise figure at 20Ghz is measured
less than 1dB and at 40GHz at only 2dB.
 NFMIN is flat across various frequency ranges.
11
40
15
35
14
Measured Receiver NF (dB)
Measured Receiver Gain (dB)
Circuit examples at ~100GHz: LNAs
30
25
20
15
Receiver Gain - Element 1 (H3)
Receiver Gain - Element 2 (H3)
Receiver Gain - Element 3 (H3)
Receiver Gain - Element 4 (H3)
Receiver Gain - Element 1 (H2)
Receiver Gain - Element 2 (H2)
Receiver Gain - Element 3 (H2)
Receiver Gain - Element 4 (H2)
10
5
75
80
85
90
95
100
Input RF Frequency (GHz)
13
12
11
Receiver NF - Element 1 (H3)
Receiver NF - Element 2 (H3)
Receiver NF - Element 3 (H3)
Receiver NF - Element 4 (H3)
Receiver NF - Element 1 (H2)
Receiver NF - Element 2 (H2)
Receiver NF - Element 3 (H2)
Receiver NF - Element 4 (H2)
10
9
8
7
6
0
70
SBC18H2
105
110
5
70
75
80
85
90
95
100
Input RF Frequency (GHz)
 Broad band mm-wave LNAs fabricated in SBC18H2 and SBC18H3
 4 identical LNAs built for a 4-channel W-band phased-array receiver
 Nearly 30dB of gain above noise floor at 85GHz
 Almost perfect matching between LNAs
12
105
110
RF Grounding:
Deep Silicon Vias vs. Through Silicon Vias
Deep Silicon Vias
~150um
emitter
collector
Through-Silicon Vias
Metal 1
p- Epi
Metal 1
~10um
~100um
p++ handle wafer
Backside Metallization
Backside Metallization
 Deep
Silicon Vias and Through Silicon Vias are available for
enhanced RF grounding.
13
Bipolar Roadmap
3µm Emitter 122 Device
0.13x20um 122 Device
5
4
VBE=0.825V
200
PEAK
3
VCB = 0.5V
FMEAS=20GHz
FMAX (GHz)
NFMIN (dB)
300
SBC18H2
SBC18H3
SBC18H4 (Prototype)
2
100
SBC18H2
SBC18H3
SBC18H4 (prototype)
1
0
0
10
20
30
Frequency (GHz)
40
50
0
1
10
2
JC (mA/µm )
 next generation (SBC18H4) is in final development
stage ,Fmax=350Ghz , improved noise figure.
 SiGe NPN on thick film SOI under development.
14
Summary
 TowerJazz offer SiGe HBJT devices on 0.35µm, 0.18µm
and 0.13µm technology nodes.
 TowerJazz SiGe HBJT offers Best in class SiGe Speed /
Power and Best in class Noise.
 The SiGe HBJTs are embedded into complimentary
BiCMOS platforms offering high performance RF, analog
and digital performances.
15
www.towerjazz.com
Complete SBC18H3 Device Roster
Family
Device
Characteristics
CMOS
1.8V CMOS
Model-exact copy of all other TJ 0.18um CMOS
3.3V CMOS
Bipolar
Resistors
Capacitors
Varactors
RF Diodes
HS NPN
240 GHz FT / 280 GHz FMAX
STD NPN
55GHz FT / 3.2V BVCEO
LPNP
b=35
Poly
235 W/sq and 1000 W/sq
Metal
25 W/sq TiN on M3
Single MIM
2 or 2.8 fF/µm2
Stacked MIM
4 or 5.6 fF/µm2
1.8V MOS
Q @ 20GHz = 20
Hyper-abrupt junction
Q @ 20GHz =15, Tuning Ratio = 21%
p-i-n
Isolation <-15dB, Insertion loss > -3.5dB at 50GHz
Schottky
FC > 800 GHz
17
SiGe HBJT basic layout-122 configuration
AREA2
SC
BP
WN
XN
AA, EP
AA
EW
Collector
Base
Base
Emitter
Collector
Emitter Poly
Collector
Base
Emitter EW
STI
Emitter Poly
SC Implant
EW
Native P-sub
SiGe-Based layer
Collector
Base
SiGe-Based layer
N+ for Nsub
WN
N+ for Nsub
STI
SC Implant
STI
N+ for Nsub
WN
STI
N+ for Nsub
WN
WN
Native P-sub
18