V I S H AY I N T E R T E C H N O L O G Y, I N C .
MOSFETs - 500 V with Max RDS(on) of 0.555 Ω at VGS = 10 V
AND TEC
I
INNOVAT
O L OGY
SiHP12N50C, SiHB12N50C, SiHF12N50C
N
HN
POWER MOSFETs
O
19
62-2012
High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs
in TO-220AB, TO-220 FULLPAK, and D2PAK Packages
KEY BENEFITS
•
•
•
•
•
Maximum RDS(on) of 0.555 Ω at VGS = 10 V
Low gate charge, Qg max = 48 nC
RDS(on) * Qg FOM of 26.64 Ω-nC
100 % avalanche tested
Improved Trr / Qrr
APPLICATIONS
• Lighting
• Welding
• NB adapters
RESOURCES
•
•
•
•
Datasheet: SiP12N50C, SiB12N50C, SiF12N50C - http://www.vishay.com/doc?91388
More featured products: http://www.vishay.com/ref/featuredmosfets
For technical questions contact hvm@vishay.com
Material categorization: For definitions of compliance please see
http://www.vishay.com/doc?99912
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
PRODUCT SHEET
1/2
VMN-PT0217-1208
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
• Low Figure-of-Merit Ron x Qg
560 V
0.555
48
Qgs (nC)
12
PRODUCT SUMMARY
• Gate Charge Improved
VDS (V) at TJ max.
O
N
AND TEC
Power MOSFET
POWER MOSFETs
Power MOSFET
560 V
RDS(on) (Ω)
VGS = 10 V
• Trr/Qrr Improved
Qg (Max.) (nC)
• Compliant to RoHS Directive 2002/95/EC
Qgs (nC)
PRODUCT
SUMMARY
PRODUCT SUMMARY
Qgd (nC)
560 V
VDS (V) at TJ max. VDS (V) at TJ max.
560 V
Configuration
RDS(on) (Ω)
VGS
= 10 V
Vishay
Siliconix
RDS(on) (Ω)
VGS = 10
V
0.555
TO-220 FULLPAK
48
Qg (Max.) (nC) TO-220AB 48
Qg (Max.) (nC)
12
Qgs (nC)
12
Qgs (nC)
Qgd (nC)
15
Qgd (nC)
15
Configuration
Single
Configuration
SingleS
0.555
SiHP12N50C, SiHB12N50C, SiHF12N50CFEATURES
Qgd (nC)
15
Configuration
Single
TO-220AB
D
SiHP12N50C,
SiHB12N50C, SiHF12N50C
TO-220 FULLPAK
FEATU
48
12
19
• Low F
O L OGY
Qg (Max.) (nC)
• 100 % Avalanche Tested
I
VGS = 10 V
HN
RDS(on) (Ω)
V I S H AY I N T E R T E C H N O L O G Y, I N C .
INNOVAT
VDS (V) at TJ max.
• 100 %
• Gate
FEATURES
62-2012
• Trr/Qr
• LowRon
Figure-of
• Low Figure-of-Merit
x Qg
15
Single
Comp
• 100
% •Avalan
•0.555
100 % Avalanche
Tested
• Gate Charge I
• Gate Charge Improved
High-Voltage MOSFETs
- 500 V N-Channel Power MOSFETs
Power MOSFET
• T /Q Improved• T /Q Improve
in TO-220AB, TO-220 FULLPAK, and D2PAK Packages
• Compliant
• Compliant to RoHS
Directiveto20R
G
D
S
GD S
G
D2PAK (TO-263)
S
FEATURES
D
G
PRODUCT
SUMMARY
S
N-Channel MOSFET
VDS (V) at TJ max.
560 V
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC) INFORMATION
ORDERING
Qgs (nC)
Package
Qgd (nC)
Lead
(Pb)-free
0.555
• Gate Charge Improved D S
TO-220AB12
15
SiHP12N50C-E3
D2PAK
TO-220 FULLPAK
G
(TO-263)
G
D
TC = 25 °C
GS
C
N-Channel MOSFET
c
S
Pulsed Drain Current
GD S
S
G D
Package
LIMITLead (Pb)-free
S
TO-220
FULLPAK
S
N-Channel MOSFET
G
S
TO-220AB
D2PAK (TO
SiHP12N50C-E3
SiHB12N5
N-Channel MOSFET N-Channel MOSFET
UNIT
Package
± 30
Lead (Pb)-free
Continuous Drain Current (T = 150 °C)
at 10 V
T = 100 °C
SiHP12N50C,
SiHB12N50C,VS SiHF12N50C
Vishay
Siliconix
Linear Derating Factor
S
G D
ORDERING
INFORMATION
500 ABSOLUTE
VDS
MAXIMUM
RATINGS (TC = 25 °C, unless otherwi
ORDERING
INFORMATION
V
G
a
S
ORDERING INFORMATION
G D
VGS
Package
J
D
G
TO-220 FULLPAK
D2PAK (TO-263)
TO220-AB
SYMBOL D2PAK (TO-263)
Gate-Source Voltage
G D
D
• Compliant to RoHS Directive 2002/95/EC
S
GD S
G
rr
SiHF12N50C-E3
S
Drain-Source Voltage
D2PAK (TO-263)
S
GDG
D
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
GD S
rr
rr
D2PAK (TO-263)
• T /Q Improved
rr rr
SiHB12N50C-E3
Single
TO-220AB
TO-220
FULLPAK
D2PAK
(TO-263)
D
rr
• 100 % Avalanche Tested
48
Configuration
G
TO-220 TO-220AB
FULLPAK
TO-220AB
D
D
• Low Figure-of-Merit Ron x Qg
ID
IDM
TO-220AB
Lead (Pb)-free
12
SiHP12N50C-E3
7.5 PARAMETER
A
TO-220AB
D2PAK (TO-263)
SiHP12N50C-E3SiHB12N50C-E3
D2PAK (TO-263)TO-
SiHB12N50C-E3SiHF
28 Drain-Source Voltage
Note
ABSOLUTE
MAXIMUM
(TC =otherwise
25 °C, unless
ABSOLUTE MAXIMUM
RATINGS
(TC =RATINGS
25
°C, unless
noted)otherwise noted
1.67
0.28
W/°C
SiHP12N50C,
SiHB12N50C, SiHF12N50C
Single Pulse Avalanche Energy
Gate-Source Voltage
a. Limited by maximum junction temperature.
LI
mJ
b. Vdd = 50 V, starting TJ = 25 °C, L = 2.5 mH,
TC = 25 °C
25 Ω,
Continuous
Drain
Current
(TR
°C)IaAS = 12 A.
VGS at 10 V TO220-AB
J g==150
208
36
W
Maximum Power Dissipation
P
D
100 °C
TC =SYMBO
PARAMETER
Package
TO-220AB
D2PAK (TO-263)
TO-220 FULLPAK
c. Repetitive rating; pulse width
limited D
by2PAK
PARAMETER
SYMBOL
(TO-263
THERMAL
RESISTANCE
RATINGS
- 55 to + 150
Operating Junction
and Storage Temperature
Range
TJ, Tstg
c
maximum junction temperature.
Pulsed
Drain Current
Lead (Pb)-free
SiHP12N50C-E3
SiHB12N50C-E3
SiHF12N50C-E3
°C
Drain-Source
Voltage
VDS 5
Drain-Source
Voltage
V
d
DS
2
for 10 s D PAK (TO-263)
300
Soldering Recommendations (Peak Temperature)
PARAMETER
SYMBOL
TO220-AB
TO-220 FULLPAK
UNIT
d. 1.6 mm from case.
Linear
Derating Factor
Gate-Source
Voltage
VGS ±
Gate-Source Voltage
VGS
Maximum Junction-to-Ambient
RthJA
62
65
Notes
Single Pulse Avalanche Energyb
THERMAL
RESISTANCE
RATINGS(TC = 25 °C, unless otherwise noted)
TC = 25 °C
ABSOLUTE
MAXIMUM
RATINGS
TC = 25 °C
1
a. Maximum
Limited by
maximum
junction
temperature.
a
Junction-to-Case
(Drain)
RthJC
°C/W
0.6
3.5
Continuous
Drain°C)
Current
(TJ = 150
°C)at
VGS at 10 V ID
ID
a
Continuous Drain
Current
(TJ Maximum
= 150
VGS
10 V
= 12 A.
b.PARAMETER
VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, R
Power
SYMBOL
D2PAK (TO-263)
TO-220
FULLPAK
UNITDissipation
g = 25 Ω, IAS TO220-AB
TC = 100 °C
LIMIT
7
TC = 100 °C
a
(PCB
mount)
RthJA
c. Junction-to-Ambient
Repetitive rating; pulse
width
limited by maximum
junction temperature.40
c
Maximum Junction-to-Ambient
RthJA
62
65
Operating
and Storage Temperature Range
TO220-AB
TO-220
IDM 2
Pulsed
Drain
CurrentJunction
c
d. 1.6 mm from case.
IDM
Pulsed Drain Current
Note
Note
PARAMETER
SYMBOL D2PAK (TO-263)
FULLPAK
UNIT
Maximum
Junction-to-Case (Drain)
RthJC
°C/W
0.6
3.5 Derating
for 10 s
Soldering
Recommendations
(Peak Temperature)d
Linear
Factor
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Linear Derating Factor
1.67
a. When mounted on 1" square PCB
500
Drain-Source Voltage(PCB mount)a
VDS
Junction-to-Ambient
RthJA
40
(FR-4 or G-10 material).
EAS 1
Single
Pulse
b Avalanche Energy
Notes
V b
EAS
Single Pulse Avalanche
Energy
± 30
Gate-Source Voltage
VGS
a. Power
LimitedDissipation
by maximum junction temperature.
Note
Maximum
208 PD
Maximum Power Dissipation
P
SPECIFICATIONS
(T
=
25
°C,
unless
otherwise
noted)
D = 12 A.
J
=
50
V,
starting
T
=
25
°C,
L
=
2.5
mH,
R
=
25
Ω,
I
b.
V
T
=
25
°C
12
DD
J
g
AS
C
a. When mounted on 1" square PCB (FR-4
or G-10 material).
Continuous Drain Current (TJ = 150 °C)a
V at 10 V
ID
Tstgt
Operating
Junction
and
Storage
Temperature
Range
c. TYP.
Repetitive
rating;
pulse
width limited
by maximum junction
Storage
Temperature
Range
TJ, Tstgtemperature. TJ-, 55
PARAMETER
SYMBOLGS
MIN.
MAX.
UNIT
= 100CONDITIONS
°C Operating Junction and
7.5
TCTEST
A
d
d. Recommendations
1.6 mm from case.(Peak
for
10
s
Soldering
Temperature)
d
c
* Pb
containing
terminations
are not RoHS compliant, exemptions may apply
Static
for 10 s
3
Soldering
Recommendations
IDM
28 (Peak Temperature)
Pulsed
Drain Current
b
ORDERING INFORMATION
EAS
180
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Notes
VGS = 0 V, Notes
ID = 250 μA
500
- 0.28www.vishay.com
V
Drain-Source
Breakdown
VDS
Document
Number:
91388 Voltage
Linear Derating
Factor
1.67
W/°C
PARAMETERB, 26-Apr-10
SYMBOL
TEST CONDITIONS
MIN. by
TYP.
MAX.
UNITtemperature.
S10-0969-Rev.
1
a. Limited
maximum
a. °C,
Limited
junction
temperature.
V
Coefficient
ΔVDS/TJ
Reference to 25
mAmaximum
- 180 0.6
- junction
V/°C
EIDAS= 1 by
mJ
Single
Pulse Avalanche
Energyb
DS Temperature
= 50 V, starting TJ = R
25
°C, L = 2.5 mH, R = 25 Ω, IAS = 12 A.
b. VTDD
Static
b. V = 50 V, starting
J = 25 °C, L = 2.5 mH,
g = 25 Ω, IAS = 12 A.g
Gate-Source
Threshold
Voltage (N)
VGS(th)
VDS = VGS, ID = DD
250
3.0
5.0
V
208
36
W
Maximum Power
Dissipation
PD μA
c. Repetitive
rating;
pulse
width
limited by maximum junction temperature.
by
VGS = 0 V, c.
ID =Repetitive
250 μA rating; pulse
500width limited
- maximum
V junction temperature.
Drain-Source Breakdown Voltage
VDS
d. 1.6
, Tmm
- 55
to +from
150
Operating Junction
and Storage Temperature Range
TJV
Gate-Source
Leakage
IGSS
VGS =d.
± 30
- mm
- case.
± 100
nA
1.6
stg from case.
°C
VDS Temperature Coefficient
ΔVDS
/T
Reference
to
25
°C,
I
=
1
mA
0.6
V/°C
J
D
for 10 V
s DS = 500 V, VGS = 0 V
Soldering Recommendations (Peak Temperature)d
- 300
50 terminations are not RoHS compliant, exemptions may apply
* Pb -containing
Gate-Source
Threshold
VIGS(th)
VDS = VGS, ID = 250 μA
3.0
5.0
V
μA
Zero Gate Voltage
DrainVoltage
Current(N)
DSS
VDS = 400 V, VGS = 0 V, TJ = 125 °C
250
Notes
Document
Number:
91388
Leakage junction temperature.
IGSS
VGS = ± 30 V
± 100
nA
a.Gate-Source
Limited by maximum
S10-0969-Rev.
Drain-Source On-State Resistance
RDS(on)
V = 10 V
ID = 4 A
0.46
0.555B, 26-Apr-10
Ω
25 Ω, IAS = 12GSA. VDS = 500 V, VGS =
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg =
0V
50
μA
GateTransconductance
Voltage
IDSS
Forward
gfs junction temperature.
VDS = 50 V, ID = 3 A
3
S
c.Zero
Repetitive
rating; Drain
pulse Current
width limited by maximum
VDS = 400 V, VGS = 0 V, TJ = 125 °C
250
d. 1.6 mm from case.
Dynamic
* Pb containing
areΩ not
RoHS compliant,
exemptions may apply
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 4 A terminations
- are 0.46
0.555
* Pb containing
notterminations
RoHS
compliant,
exemptions
may apply
Input Capacitance
Ciss
1375
Forward Transconductance
gfs
VDS =VGS
50 =
V,0IDV,= 3 A Number:Document
3
S
Number:
91388
Document
91388
Output Capacitance
Coss
165B, 26-Apr-10
pF
VDS = 25 V,
S10-0969-Rev.
S10-0969-Rev.
B, 26-Apr-10
Dynamic
f = 1.0
MHz
Reverse Transfer Capacitance
Crss
17
Input Capacitance
Ciss
1375
VGS = 0 V,
Total Gate Charge
Qg
32
48
Output Capacitance
Coss
165
pF
VDS = 25 V,
* Pb
containing Charge
terminations are not RoHS compliant,
may
apply
Gate-Source
Qgs exemptions
= 10
V f = 1.0
ID =MHz
10 A, VDS = 400 V
12
nC
VGS
Reverse Transfer Capacitance
Crss
17
Document
Number:
www.vishay.com
Gate-Drain
Charge91388
Qgd
15
Total Gate Charge
Qg
32
48
S10-0969-Rev.
B, 26-Apr-10
1
18
Turn-On Delay Time
td(on)
Gate-Source Charge
Qgs
ID = 10 A, VDS = 400 V
12
nC
VGS = 10 V
35
Rise Time
tr
VDD = 250 V, ID = 10 A
Gate-Drain Charge
Qgd
15
ns
Rg = 4.3 Ω, VGS = 10 V
23
Turn-Off Delay Time
td(off)
Turn-On Delay Time
td(on)
18
Fall Time
tf
6
35
Rise Time
tr
VDD = 250 V, ID = 10 A
ns
Gate Input Resistance
Rg
f = 1 MHz, open drain
1.1
Ω
=
4.3
Ω,
V
=
10
V
R
g
GS
23
Turn-Off Delay Time
td(off)
Drain-Source Body Diode Characteristics
Fall Time
tf
6
MOSFET symbol
Continuous
Source-Drain Diode Current
12
Gate
Input Resistance
RISg
f = 1 MHz, open drain
-1.1
Ω
showing the
A
Note
integral reverse
Drain-Source Body Diode Characteristics
28
Pulsed Diode Forward Current
ISM
p - n junction diode
The information shown here is a preliminary
MOSFET symbol
Continuous Source-Drain Diode Current
IS
12
product proposal, not a commercial product
Body Diode Voltage
VSD
TJ = the
25 °C, IS = 10 A, VGS = 0 V
1.8
V
showing
A
data sheet. Vishay Siliconix is not committed
integral
reverse
Body Diode
trr
580
ns
toproduce this or any similar product. This
-28
Pulsed
DiodeReverse
ForwardRecovery
Current Time
ISM
p - n junction diode
TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,
information should not be used for design
Body Diode Reverse Recovery Charge
Qrr
4.3
μC
= 10
20 A,
V VGS = 0 V
Body Diode Voltage
VSD
TJ = 25 °C,VISR =
1.8
V
purposes, nor construed as an offer to
Body Diode Reverse Recovery Current
IRRM
13
A
furnish or sellsuch products.
Body Diode Reverse Recovery Time
trr
580
ns
Note
TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,
Body Diode Reverse Recovery Charge
Qrr
4.3
μC
V
VR = 20product
• The information shown here is a preliminary product proposal, not a commercial
data sheet. Vishay Siliconix is not committed to
Body
Diode
Reverse
CurrentThis information
IRRM should not be used for design purposes, nor construed
13 offer to -furnish or
A sell
produce
this
or any Recovery
similar product.
as an
such products.
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
THIS DOCUMENT
IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
SPECIFIC DISCLAIMERS,
SET FORTH AT www.vishay.com/doc?91000
D
G
Revision 26-Apr-10
MOSFETs - 500 V with Max RDS(on) of 0.555 Ω at VGS = 10 V
Power
MOSFE
SiHP12N50C,
SiH
SiHP12N50C,
SiHB12N50C
FEATURES
PRODUCT SUMMARY
S
D
G
S
PRODUCT SHEET
www.vishay.com
2/2
VMN-PT0217-1208
Document Number: 91388