LNA Systems at JPL
Damon Russell
Remote Sensing Group 382F
Technology Concepts
for the
Next Generation VLA
4.09.2015
DSN LNAS
DSN LNA Systems Overview
JPL 238 TRX Measurements
Ka Development
Rx Cartridge
Rx Testing at JPL
Noise (K)
• Cryogenic receivers at S, X, and Ka DSN
communication bands
• InP based LNAs with 3-9 K noise temperature
• Receiver systems include OMTs, noise sources,
and calibration loads, cooled by CTI-350 and
Sumitomo 4K Cyro-coolers
• Prototype systems fielded at DSS 13, a 34 m
Beam Waveguide Antenna, Goldstone CA.
120
110
TRCP Old
100
TLCP Old
90
TRCP New
80
TLCP New
70
60
50
40
30
20
10
0
26
27
28
29
30
31 32 33 34
Frequency (GHz)
35
36
34 m Beam Waveguide
Antenna DSS 13
37
38
Current DSN X and Ka Band Amplifiers
• Discrete “chip and wire” designs based on “Cryo-3” InP devices
• 3-4.5 K noise at 8.2 GHz, 9 K at 32 GHz
• Increasingly challenging to tune, as best portions of Cryo-3 wafers have been
DSN X-Band LNA SN 44
depleted.
40
X-Band LNA Module
NOISE
GAIN
Noise (K), Gain (dB)
35
30
25
20
15
10
5
0
2
4
6
8
10
Frequency (GHz)
12
14
DSN Ka-Band LNA SN 66
Cryo-3 Wafer
40
GAIN
NOISE
Noise (K), Gain (dB)
35
30
25
20
15
10
5
0
24
*Photos and data courtesy of E. Long, JPL
26
28
30
32
34
Frequency (GHz)
36
38
40
Next Generation X Band Amplifiers
• OMMIC D007IH 70 nm process
• T50=4.4 K, 3-4 K with external matching
network.
• Gain = 37 dB
• Unconditionally stable
• Tape-out also includes 50, 80, 120,
200, 400, and 600 um discrete devices
for characterization purposes
X-Band MMIC 1.5 x 1 mm
MMIC T50 and Tmin @ 15 K
MMIC [S] Parameters
*Cryogenic transistor models courtesy Prof. A. Akgiray, Ozyegin University
X-Band LNA Module
• 1.1 x 1.8 x .4 inch, SMA connectorized
package
• Integrated bias protection network,
micro-D connector
• T50=3.5 K
• Gain = 37 dB
• S11, S22 better than 15 dB
Module T50 and Tmin @ 15 K
*Mechanical drawings courtesy R. Higuera, JPL.
Sublid
Module [S] Parameters
Ka-Band InP MMIC
• Ka Band MMIC fabricated on
NGST 35 nm InP process.
• T50=7.2 K
• Gain = 33 dB
• S11, S22 better than 12 dB.
• Unconditionally stable.
MMIC T50 and Tmin @ 15 K
*Assembly photo courtesy S. Montanez, JPL.
MMIC [S] Parameters
SIGE IF LNAS FOR TERAHERTZ
MIXER ARRAYS
REQUIREMENTS
• Small size  # of pixels
• Low power consumption  burden
on cryogenics, # of pixels
• Minimum number of connectors
ease of packaging, service
• Low input return loss minimize
effect of standing waves between
mixer and LNA
System Concept
SiGe MMIC, 570 x 1500 µm
4 x 4 Array Example
SiGe IF LNA Developed for CHAI/GUSSTO
• 2-8 GHz
• 8 K noise with 10 mW DC power
• Integrated bias-tee in output line, no
separate DC connector required.
• Resistive feedback for low S11.
• 13.7 x 5 x 22.5 mm package with GPPO
connectors.
LNA Performance at 5, 10, and 16 mW DC Power
Tamb=15.8 K
Tamb=15.8 K
24
22
40
Bias 1
Bias 2
Bias 3
30
16
14
Gain (dB)
Noise (K)
20
18
12
10
8
6
4
25
20
15
10
5
2
0
0
Bias 1
Bias 2
Bias 3
35
2
4
6
8
10
12
Frequency (GHz)
*Assembly courtesy S. Montanez & M. Soria, JPL.
14
16
18
0
0
2
4
6
8
10
12
Frequency (GHz)
14
16
18