Materials Transactions, Vol. 45, No. 3 (2004) pp. 689 to 694 Special Issue on Lead-Free Soldering in Electronics #2004 The Japan Institute of Metals Low Cycle Fatigue Properties of Ni added Low Silver Content Sn-Ag-Cu Flip Chip Interconnects Yoshiharu Kariya1; *1 , Takuya Hosoi2; *3 , Takashi Kimura1; *2 , Shinichi Terashima3 and Masamoto Tanaka3 1 National Institute for Materials Science, Tsukuba 3050044, Japan Graduate School of Shibaura Institute of Technology, Tokyo 1088548, Japan 3 Advanced Technology Research Laboratories, Nippon Steel Corporation, Futtsu 2938511, Japan 2 The straddle fatigue test has been performed to study the fatigue properties of Sn-1.2 mass%Ag-0.5 mass%Cu-0.05 mass%Ni for flip chip interconnections. The low cycle fatigue resistance of the alloy is equivalent to that of Sn-3 mass%Ag-0.5 mass%Cu alloy, even though the fatigue endurance of Sn-1 mass%Ag-0.5 mass%Cu alloy was poorer than that of the 3 mass%Ag alloy. The alloy has fine microstructure and Ag3 Sn intermetallic compound makes a network structure together with fine (Cu,Ni)6 Sn5 compound. The microstructure resulted in high cyclic strain hardening exponents, which leaded to good low cycle fatigue endurance of the alloy. (Received September 19, 2003; Accepted December 17, 2003) Keywords: flip chip, fatigue life, shear fatigue, nickel addition, ball grid Array (BGA) joints, low silver content, lead-free solder, tin-silvercopper Increasing environmental and health concern over the toxicity of lead has provided a driving force to ban the use of Pb-Sn solders, and has stimulated to develop lead-free solder.1,2) Environment friendly technology in electronics involves Pb-free flip-chip solder development. Excellent fatigue resistance is required for Pb-free flip-chip solder ball as the CTE mismatch between Si chip and organic substrate imposes a significant shear strain into the solder bumps.3) SnAg-Cu family will become candidates for flip-chip interconnects from the view point of fatigue resistance,4,5) while a correlation between chemical compositions and fatigue resistance is still not clarified to date. In our previous study,6) we investigated the relationship between the low cycle fatigue life of Sn-xAg-0.5 mass%Cu flip-chip interconnects and silver content. The fatigue life of 3 mass%Ag solder alloy was longer than that of other alloys tested. On the other hand, low silver content alloy such as the 1 mass%Ag alloy exhibited relatively good fatigue resistance in high strain regime, whereas the fatigue life in low strain conditions was the poorest in the alloys tested. From the result, we concluded that 3 mass% is recommended for the silver content in the SnAg-Cu flip-chip bump for wide condition. Nevertheless, low silver content Sn-Ag-Cu alloys remains to be further investigated from the viewpoint of preventing brittle failure at intermetallic layers because of both its ductile nature and alloy cost saving. Fatigue properties of the low silver content alloy need to be enhance to apply to flip-chip application. Guo reported that small amount of nickel has a potential to enhance creep strength of Sn-Ag system.7) Therefore, we selected nickel as the fourth element to improve fatigue properties of the low silver content Sn-Ag-Cu alloy, and the mechanical shear fatigue life of flip-chip interconnections made using the Ni added alloy has been investigated in the similar manners in previous study. 2. Experimental 2.1 Specimen A 8 mm 8 mm Si chip was joined on 0.6 mm thick FR-4 substrate using 0.3 mm diameter solder ball with 0.5 mm pitch as shown in Fig. 1. The ball arrangement is shown in Fig. 2. 170 balls were mounted on the chip. Sn-1.2 mass%Ag0.5 mass%Cu-0.05 mass%Ni solder alloy was used in this study. Sn-3.0 mass%Ag-0.5 mass%Cu and Sn-1.0 mass%Ag0.5 mass%Cu alloys were also used to compare fatigue resistance. The surface was finished with Cr/Ni/Au on aluminum electrodes for chip side and Ni/Au for copper traces on the substrate. The FR-4 substrate was divided into two parts before joining, and then the Si chip and the divided substrates were joined with 1 mm gap as shown in Fig. 1. All FR-4 Substrate 5 Introduction 3. 1. φ Solder ball φ 2.5 30 1 Si Chip 12 14.5 5 10 15 Unit:mm 20 *1Eco-Materials Center, National Institute for Materials Science Analysis station, National Institute for Materials Science *3Graduate Student, Shibaura Institute for Technology *2Materials Fig. 1 Schematic illustration of flip chip interconnects for split board shear fatigue test. 690 Y. Kariya, T. Hosoi, T. Kimura, S. Terashima and M. Tanaka 17 x 5 balls 8 Unit:mm 0.4 8 Fig. 2 Schematic illustration of ball arrangement. Fig. 5 Final assembly of specimen with fixing jigs. 220µm Si Chip Cr/Ni/Au 320µm Ni/Au Cu Pad FR-4 Substrate 100µm Fig. 3 Cross-sectional image of the flip-chip joint. samples were joined by the conventional reflow process in air at the peak temperature of 518 K for 60 s with a RMA flux. Figure 3 shows cross sectional optical image of the flip-chip bump. No significant voids were observed, and the bump height and width were approximately 220 mm and 320 mm, respectively for all joints. 2.2 Shear fatigue test In this study, the mechanical shear fatigue test was employed. In general, the thermal cycle testing is used for reliability evaluations, while the test continues to be conducted for a long period of time. Another approach is to mechanically cycle the interconnects rather than to produce the strains by changing the temperature, and thermomechanical fatigue life of the solder joints can be obtained from mechanical fatigue test.8,9) In order to evaluate the mechanical shear fatigue properties of the flip-chip interconnections, the straddle fatigue test was used in this study.6,10,11) The methodology of the straddle fatigue test is imposition of shear deformation into the solder alloy by mechanical displacement of the substrates as shown in Fig. 4. The fatigue test was performed using a precise displacement controlled by the fatigue test machine. A linear DC motor was employed for an actuator of the machine, and the Si Chip H ∆d/2 L Solder ball ∆d/2 L+∆d Fig. 4 Schematic illustration of shear deformation of split board specimen. displacement resolution of the actuator and maximum load capacity were 20 nm and 200 N, respectively. The actuator is supported by air pressure without any mechanical contact to avoid a friction load that influences measurement accuracy of the load. The specimen was attached to the fixture using two steel shims and eight screws as shown in Fig. 5. The fixture is designed to position the bump center at the load line to suppress bending deformation of the sample. The total displacement range was measured using the eddy current type gap sensor attached to the fixture at the room temperature (298 K) in air. The room temperature was maintained to 1 K throughout the test. The resolution of the gap sensor is less than 0.1 mm at the room temperature. The total displacement range varied from 25 to 5 mm, and the loading profile is a continuous cycling with the shear strain rate of 1 102 s1 . The fatigue life was defined as the number of cycles at 20% load drop from initial load. 2.3 Microstructural observation The specimens were sectioned by a tungsten wire saw to prevent any damage. They were ground with two grades of SiC papers (#500, and 1200) and then mechanically polished with a diamond paste (15 mm). Finally, the specimens were polished with colloidal silica suspension. After polishing, they were observed using a scanning electron microscope in backscatter electron mode (BSE). A FE-EPMA (electron probe microanalyzer) developed by NIMS was used for quantitative analysis and elemental mapping. The EPAMA employs a schottky type field emission high brightness electron gun which can extremely smaller probe diameter than the conventional one with a W hairpin type electron gun, and is able to analyze sub micron area of 200 nm or less.12) 3. Results and Discussion 3.1 Microstructure The as-fabricated microstructures of each solder bump are shown in Fig. 6. The microstructure of the alloys consists of sub micron size intermetallic compounds and a -Sn matrix for all alloys. In the 1 mass%Ag bump, the intermetallics coarsely dispersed within the matrix, and a volume of the intermetallics is less than that in other bumps as can be seen in the figure. The 3 mass%Ag bump has much more intermetallics compared with the 1 mass%Ag bump, and those appeared around the -Sn grains with a network Low Cycle Fatigue Properties of Ni added Low Silver Content Sn-Ag-Cu Flip Chip Interconnects (a) (b) 10 10µm 691 ( (c) 10µm 10 10µm Fig. 6 Backscatter electron images showing microstructure of each solder bump (a: Sn-1.0 mass%Ag-0.5 mass%Cu, b: Sn-3.0 mass%Ag0.5 mass%Cu, c: Sn-1.2 mass%Ag-0.5 mass%Cu-0.05 mass%Ni). Cu Intensity ( arb. units ) structure. On the other hand, the Ni added alloy has relatively small -Sn grains, and a number of the intermetallics can be identified in the bump compared with the 1 mass%Ag bump, even though the difference in the silver content is only 0.2 mass% between the 1 mass%Ag and the Ni added alloy. In addition, the Sn grains are perfectly decorated with the intermetallics, which make a network structure. The microstructure suggests that the small amount of Ni fine down the microstructure of low silver content Sn-Ag-Cu alloy, which may enhance the mechanical properties of the alloy. Ag3 Sn and (Cu,Ni)6 Sn5 intermetallic compounds were identified by the EPMA. Ag3 Sn was determined by quantitative point analysis, and (Cu,Ni)6 Sn5 compound was determined by X-ray image data using X-ray intensity scatter diagram method. The X-ray intensity scatter diagram for Sn1.2 mass%Ag-0.5 mass%Cu-0.05 mass%Ni is shown in Fig. 7. Same results were observed for other alloys tested here. Figure 8 shows EPMA elemental mapping image of Ag, Cu and Ni for the 1 mass%Ag and the Ni added solder bumps. As the electrodes were plated by nickel, nickel is dissolved in Cu6 Sn5 for all bumps, even if nickel was not alloyed before soldering. Both silver and copper identified coarsely within the microstructure of the 1 mass%Ag alloy as can be seen in (Cu8, Ni2)6Sn5 (Cu3, Ni2)6Sn5 the figure, which means Ag3 Sn and (Cu,Ni)6 Sn5 coarsely disperse in the matrix. On the other hand, silver and copper present very finely in the microstructure of the Ni added alloy, and Ag3 Sn compound makes a perfect network structure together with fine (Cu,Ni)6 Sn5 compound as shown in the figure. The fine network structure of intermetallic compounds in the Ni added alloy suggests that Ag3 Sn and (Cu,Ni)6 Sn5 crystallize rapidly compared with the 1 mass%Ag alloy after crystallizing pro-eutectic Sn grains, while a detail mechanism to form the microstructure is not able to clarified at that time. 3.2 Relationship between displacement and fatigue life Figure 9 shows the relationship between the total displacement range and fatigue life. The data on the total displacement range versus the fatigue life obey power law type relationship as shown in Fig. 9. The fatigue life of the 1 mass%Ag alloy is evidently poorer in any displacement conditions than the other alloys tested, and the life is almost one third of the life of the 3 mass%Ag alloy. On the other hand, the Ni added low silver content alloy has superior fatigue resistance in any displacement regimes, and the life is almost equivalent to that of 3 mass%Ag alloy. Since an increase in silver content up to 2 mass% did not improve low cycle fatigue resistance of Sn-xAg-0.5 mass%Cu alloy in our previous study,6) the result suggests that small amount of Ni has an effect to enhance low cycle fatigue resistance of low silver content Sn-Ag-Cu alloy. 3.3 Cyclic stress-strain response for each joint In the straddle fatigue test employed in this study, the elastic deformation occurs in not only solder bump but also in the other materials i.e. the Si chip and the FR-4 substrate. Hence, the total displacement range observed during the test may be described as follows. dtotal ¼ dsolder(el) þ dsolder(pl) þ dchip(el) þ dsub(el) Ni Intensity ( arb. units ) Fig. 7 X-ray intensity scatter diagram of Sn-1.2 mass%Ag-0.5 mass%Cu0.05 mass%Cu. ð1Þ where dtotal is the total displacement applied which includes the deformation for both side of the divided specimen, dsolder(el) is the elastic deformation of solder, dsolder(pl) is plastic deformation of solder, dchip(el) is the elastic deformation of chip, and dsub(el) is elastic deformation of substrate. The data plotted against the total displacement range as shown in Fig. 9 do not indicate fatigue properties of 692 Y. Kariya, T. Hosoi, T. Kimura, S. Terashima and M. Tanaka (a) Cu Ni Ag Cu, Ni, Ag (b) Cu Ni Ag Cu, Ni, Ag Fig. 8 EPMA elemental mapping image of Ag, Cu and Ni for solder bumps (a: Sn-1.0 mass%Ag-0.5 mass%Cu, b: Sn-1.2 mass%Ag0.5 mass%Cu-0.05 mass%Ni). 3 Load (N) Total Displacement, ∆d t / µm 10 80 Continuous Cycling T=298K Sn-1.2mass%Ag-0.5mass%Cu-0.05mass%Ni 60 Sn-3mass%Ag-0.5mass%Cu 2 10 40 Sn-1mass%Ag-0.5mass%Cu 20 1 -20 10 -15 -10 -5 5 10 15 20 Displacement (µm) 0 10 -20 Sn-1mass%Ag-0.5mass%Cu Sn-3mass%Ag-0.5mass%Cu Sn-1.2mass%Ag-0.5mass%Cu-0.05mass%Ni 0 10 1 2 3 4 10 10 10 10 Number of Cycles to Failure, N f 5 -40 10 Fig. 9 Relationship between fatigue life and applied displacement range for each flip chip joint. -60 -80 Fig. 10 Hysteresis loops for each flip chip joint at dt ¼ 30 mm. solder alloy itself. Figure 10 shows the hysteresis loops at the total displacement range of dt ¼ 15 mm at 3cycles for each flip-chip joint. The width of the loops at zero loads is the total plastic deformation. The possibility that nonlinear load displacement behavior could occur due to the FR-4 board was checked by straining an undivided FR-4 board which did not contain a Si chip and slit. The board was loaded to 720 N with no nonlinear strain being produced. As the maximum load throughout the fatigue test was less than 80 N, the deformation of the board is still in the linear elastic region. Therefore, the plastic deformation is allowed only in the solder bumps in this study, so that the width of the loop at zero loads reflects the amount of shear deformation of solder bump. The load range of the 1 mass%Ag alloy is much lower than that of the 3 mass%Ag alloy, and the hysteresis loop width of the alloy is lager than that of the 3 mass%Ag alloy as can be seen Fig. 10. On the other hand, the hysteresis loop shape of the Ni added low silver content alloy and 3 mass%Ag alloy look exactly alike. An addition of Ni to low silver content seems to increase the load range and to decrease the width of the hysteresis loop. The result can be interpreted that the Ni added low silver content alloy has superior strength compared with 1 mass%Ag alloy and the plastic deformation of solder bump for the alloy is less than that of 1 mass%Ag alloy, even though the same levels of the total displacement range was applied. Figure 11 shows the cyclic stress-strain curves for each joint using the data at three cycles. If the strain and stress are assumed to be uniform in the bump for convenience’ sake, the shear stress and the shear strain are defined by following equations. ¼ Pmax =Abump ¼ dp 4 Hbump ð2Þ ð3Þ where is the shear stress, Pmax is the maximum load at three cycles, Abump is the total cross area of solder bumps, is the Low Cycle Fatigue Properties of Ni added Low Silver Content Sn-Ag-Cu Flip Chip Interconnects 693 -1 25 10 20 15 10 5 0 Sn-1mass%Ag-0.5mass5Cu Sn-3mass%Ag-0.5mass%Cu Sn-1.2mass%Ag-0.5mass%Cu-0.05mass%Ni Shear Strain Range, ∆γ p Shear Stress, τ / MPa Continuous Cycling T=298K -2 10 -3 10 -4 10 0 1 2 3 Shear Strain, γ (%) 4 Sn-1mass%Ag-0.5mass%Cu Sn-3mass%Ag-0.5mass%Cu Sn-1.2mass%Ag-0.5mass%Cu-0.05mass%Ni 0 10 1 2 3 4 10 10 10 10 Number of Cycles to Failure, N f 5 10 Fig. 11 Cyclic stress-strain curves for each flip chip joint. Fig. 12 Relationship between fatigue life and shear plastic strain range for each flip chip joint. shear strain, dp is the width of hysteresis loop, and Hbump is the average height of solder bump. As shown in Fig. 11, the cyclic flow stress of the 1 mass%Ag solder is much lower than that of the 3 mass%Ag alloy. The cyclic stress-strain response of the Ni added low silver content alloy is very similar to the properties of the 3 mass%Ag alloy, even though silver content of the alloy is almost equivalent to the content of the 1 mass%Ag alloy. In general, fine microstructure results in good mechanical strength and good ductility for an alloy, and such mechanical properties are preferred to enhance the fatigue resistance. The microstructure of the Ni added alloy is obviously finer compared with the 1 mass%Ag alloy, which leads to superior mechanical strength as shown in Fig. 11. High strength solder bump induces relatively high elastic deformation to the organic substrate that has low elastic modulus as can be seen in Fig. 10. High elastic deformation results in less plastic deformation of the system, if the same level of the total displacement is applied to the specimen. Therefore, the plastic deformation of the Ni added solder bump is less compared with the 1 mass%Ag bump. As low-cycle fatigue life depends on a level of applied plastic deformation, the Ni added alloy exhibited long fatigue endurance as shown in Fig. 9. observed during the fatigue test in this study, and the plastic deformation range consists of only the shear deformation of solder bumps. Figure 12 shows the relationship between the plastic strain range determined using the plastic deformation range and fatigue life plotted on the double logarithm scale of the Coffin-Manson plot. The plastic strain range is defined by following equation. 3.4 Low cycle fatigue properties of each solder alloys As shown in Fig. 10, the plastic deformation range of the solder bumps can be obtained from the hysteresis loop p ¼ ð4Þ As can be seen in Fig. 12, all data obey the Coffin-Manson’s relationship as follows. p Nf ¼ C ð5Þ where p is the shear plastic strain range, Nf is the fatigue life, is the exponent and C is the fatigue ductility. Fatigue crack was initiated at upper corner of the bump and propagated through the solder layer. The interfacial failure was not observed for all alloys in this study. Therefore, Fig. 12 indicates a fatigue characteristic of the solder bump itself that does not include characteristics of any other components such as the FR-4, and Si chip. Low cycle fatigue properties of the Ni added alloy is equivalent to that of the 3%Ag alloy. Especially, the Ni added alloy exhibits superior fatigue resistance compared with the 1%Ag alloy in low strain regime. The Coffin-Manson relation for each alloy are: For Sn-1.0 mass%Ag-0.5 mass%Cu: For Sn-3.0 mass%Ag-0.5 mass%Cu: For Sn-1.2 mass%Ag-0.5 mass%Cu-0.05 mass%Ni: The fatigue ductility coefficient of the 1 mass%Ag alloy is much higher than that of other alloys, which means ductility of the 1 mass%Ag alloy is superior compared with other alloys. The fatigue ductility exponent is about 0.5 for the 3 mass%Ag alloy and the Ni added alloy, and is about 0.7 for the 1 mass%Ag alloy. In general, the fatigue ductility exponent correlates with the cyclic strain hardening expo- dp 2 Hbump p Nf 0:68 ¼ 0:41 p Nf 0:55 ¼ 0:26 p Nf 0:53 ¼ 0:22 ð6Þ ð8Þ ð9Þ nent, and high cyclic strain hardening exponent tends to lead to low fatigue ductility exponent for metals.12) Figure 13 shows fatigue ductility exponent as a function of cyclic strain hardening exponent. The cyclic strain hardening exponent is defined as follows: ¼ K 0 "n 0 ð10Þ 694 Y. Kariya, T. Hosoi, T. Kimura, S. Terashima and M. Tanaka of mechanical reliability. Fatigue Ductility Exponent 1 4. Conclusions 0.8 0.6 0.4 Sn-1mass%Ag-0.5mas%Cu Sn-3mass%Ag-0.5mas%Cu Sn-1.2mass%Ag-0.5mas%Cu-0.05mass%Ni 0.2 0 0.1 0.2 0.3 0.4 Cyclic Strain Hardening Exponent 0.5 Fig. 13 Fatigue ductility exponent as a function of cyclic strain hardening exponent for each joint. n0 is the cyclic strain hardening exponent and K 0 is constant. As can be seen in Fig. 13, higher cyclic strain hardening exponent exhibits lower strain fatigue ductility exponent. The cyclic strain hardening exponent of the Ni added alloy is higher than that of the 1 mass%Ag, which leads to low fatigue ductility exponent. Low fatigue ductility exponent and high fatigue ductility coefficient are necessary to have excellent fatigue endurance. In other words, good strength and good ductility are required for solder alloys which will undergo low cycle fatigue. The 3 mass%Ag alloy has good low cycle fatigue resistance, since the strength and the ductility of the alloy are well balanced. The 1 mass%Ag alloy has high ductility which results in good fatigue performance in high strain regime, whereas the cyclic strain hardening exponent of the alloy is much lower than that of the 3 mass%Ag alloy that leads somewhat poor fatigue resistance in low strain regime. From the results, low silver content alloy seems unsuitable for a candidate of lead-free solder bump. However, the Ni added alloy has good strength and good ductility similar to the 3 mass%Ag alloy, even though silver content is much lower than that of near eutectic Sn-Ag-Cu alloy. Therefore, the Ni added low silver content alloy will become a candidate alloy for flip-chip application form the view point The low cycle shear fatigue life of Sn-1.2 mass%Ag0.5 mass%Cu-0.05 mass%Ni was investigated to develop low silver content Sn-Ag-Cu alloy for flip-chip application. The low cycle fatigue properties of the Ni added alloy was equivalent to that of the 3 mass%Ag alloy, even though silver content is much lower than that of near eutectic Sn-Ag-Cu alloy. The microstructure of the Ni added alloy was obviously finer compared with the 1 mass%Ag alloy, which generated superior mechanical strength with good ductility and high cyclic strain hardening exponents similar to the 3 mass%Ag alloy. The high cyclic strain hardening exponents with good ductility of the alloy leads to good low cycle fatigue endurance of the Ni added alloy similar to the 3 mass%Ag. The Ni added low silver content alloy will become a candidate alloy for flip-chip application form the view point of mechanical reliability. REFERENCES 1) P. T. Vianco and F. R. Frear: JOM 7 (1993) 14–19. 2) S. K. Kang and A. K. Sarkhel: J. Electron. Mater. 23 (1994) 701–708. 3) D. R. Frear, J. W. Jang, J. K. Lin and C. Zhang: JOM, June (2001) 28– 32. 4) C. M. Miller, I. E. Anderso and J. F. Smith: J. Electron. Mater. 30 (1994) 595–601. 5) I. E. Anderson J. C. Foley, B. A. Cook, J. Harringa, R. L. Terpstra and O. Unal: J. Electron. Mater. 30 (2001) 1050–1059. 6) Q. Guo, E. C. Cutiongco, L. M. Keer and M. E. Fine: ASME J. Electronic Packaging 114 (1991) 145–151. 7) Q. Guo, S. Choi, K. N. Subramanian, T. R. Bieler, J. P. Lucase, A. Achari and M. Paruchuri: Mater. Sci. Eng. A351 (2003) 190–199. 8) Q. Yu, M. Shiratori, S. Kaneko, T. Ishihara and S. Wang: J. JSME 64619A (1998) 558–563. 9) Y. Kariya, T. Hosoi, S. Terashima, M. Tanaka and M. Ostuka: J. of Electron. Mater., in print. 10) H. D. Solomon: IEEE Trans. Comp. Hybrids, Manuf. Technol. 12 (1989) 473–479. 11) H. D. Solomon: ASME Journal of Electronic Packaging 144 (1992) 161–167. 12) T. Kimura, K. Nishida, S. Tanuma and H. Yamada: Jounal of Surface Analysis 10 (2003) 203–211. 13) J. D. Morrow: ASTM, STP-378 (1965) 45–52.