TGA2760-SM
9.5 – 12 GHz Power Amplifier
Applications
 Point-to-Point Radio
20-Lead 8.0 x 10.0 x 2 mm Package
Product Features
Functional Block Diagram





Frequency Range: 9.5 – 12 GHz
Power: +42 dBm Psat
Gain: 33 dB
Integrated Power Detector
Bias: VD1 = VD2 = +7 V, ID1 + ID2 = 1000 mA,
VD3 = +28 V, ID3 = 260 mA
 Package Dimensions: 8.0 x 10.0 x 2 mm
20 19 18 17 16 15 14 13 12
11
1
2
General Description
4
5
6
7
8
9
10
Pin Configuration
The Qorvo TGA2760-SM is a Power Amplifier with
integrated power detector. The TGA2760-SM operates
from 9.5 – 12 GHz and is designed using Qorvo’s power
GaAs pHEMT and GaN HEMT production processes.
The TGA2760-SM typically provides +42 dBm of
saturated output power with small signal gain of 33 dB.
The TG2760-SM is available in a low-cost, surface
mount 20 lead 8 x 10 mm laminate package and is
ideally suited for Point-to-Point Radio.
Lead-free and RoHS compliant
3
Pin No.
Label
1
2, 20
4, 18
5, 17
3, 6, 9, 10, 16, 19
7, 15
8, 14
11
12
13
RF IN
VG12
VD1
VD2
NC
VG3
VD3
RF OUT
VREF
VDET
Ordering Information
Part No.
ECCN
TGA2760-SM
3A001.b.2.b.2 9.5 – 12 GHz 18 W Amp
Description
Standard T/R size = 500 pieces on a 7” reel
Datasheet: Rev D 06-01-16
- 1 of 17 -
Disclaimer: Subject to change without notice
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Drain Voltage,VD1, VD2
Drain Voltage,VD3
Drain Current, ID1 + ID2
+9 V
+32 V
3850 mA
−40
Drain Current, ID3
Power Dissipation, Driver Stages, PDISS
Power Dissipation, Final Stage, PDISS
RF Input Power, CW, 50 Ω, T = 25 °C
GaAs Channel Temperature, TCH
GaN Channel Temperature, TCH
2000 mA
14.8 W
28.8 W
+29 dBm
250 °C
275 °C
Operating Temp. Range
VD1, VD2
VD3
ID1 + ID2
ID3
VG12
VG3
ID1 + ID2 drive
(at +39 dBm Pout)
ID3 drive
(at +39 dBm Pout)
+25
+7
+28
1000
260
−0.7
−2.6
Mounting Temperature (30 Seconds)
Storage Temperature
260 °C
−40 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Datasheet: Rev D 06-01-16
Max Units
+85
°C
V
V
mA
mA
V
V
1018
mA
930
mA
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
- 2 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Electrical Specifications
Test conditions unless otherwise noted: VD1 = VD2 = +7 V, ID1 + ID2 = 1000 mA, VG1 = VG2 = −0.7 V, VD3−= +28 V, ID3 = 260 mA,
VG3 = −2.6 V, Temp = +25 °C, Z0 = 50 Ω
Parameter
Conditions
RF Frequency Range
Small Signal Gain
Input Return Loss, IRL
Output Return Loss, ORL
Output Power at Pin = +12 dBm
Output Third Order Intercept, TOI at +35 dBm / Tone
Min
Typ
Max
Units
12.0
33
8
8
+42
+52
GHz
dB
dB
dB
dBm
dBm
36
−0.05
−0.01
%
dB / °C
dBm / °C
9.5
Power Added Efficiency
Gain Temperature Coefficient
Power Temperature Coefficient
Notes:
1.
Datasheet: Rev D 06-01-16
- 3 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Thermal and Reliability Information (Driver Stages)
Parameter
Conditions
Rating
Thermal Resistance, θJC, measured to
TBASE = +85 °C
back of package
θJC_DRIVER = 8.2 °C/W
TBASE = 85 °C, VD_DRIVER = +7 V,
ID_DRIVER = 1000 mA,PDISS_DRIVER = 7.0 W
TCH_DRIVER = 142 °C
TM_DRIVER = 8.8E+8 Hours
Channel Temperature (TCH), and
TBASE = +85 °C, VD_DRIVER = +7 V,
Median Lifetime (TM) at +39 dBm Pout ID_DRIVER = 1018 mA, PDISS_DRIVER = 7.1 W
TCH_DRIVER = 143 °C
TM_DRIVER = 7.8E+8 Hours
Channel Temperature (TCH), and
Median Lifetime (TM)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
Median Lifetime, Tm (Hours)
1.0E+15
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
FET14
1.0E+04
25
50
75
100
125
150
175
200
Channel Temperature, Tch (°C)
Datasheet: Rev D 06-01-16
- 4 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Thermal and Reliability Information (Final Stage)
Parameter
Conditions
Rating
Thermal Resistance, θJC, measured
to back of package
TBASE = +85 °C
θJC_FINAL = 5.1 °C/W
Channel Temperature (TCH), and
Median Lifetime (TM)
Median Lifetime (Hours)
Channel Temperature (TCH), and
Median Lifetime (TM) at +39 dBm
Pout
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
TBASE = 85 °C, VD_FINAL = +28 V,
ID_FINAL = 260 mA
PDISS_FINAL = 7.3 W
TBASE = +85 °C, VD_FINAL = +28 V,
ID_FINAL = 930 mA, PDISS_FINAL = 26 W –
8 W = 18 W
TCH_FINAL = 122 °C
TM_FINAL = 4.8E+10 Hours
TCH_FINAL = 177 °C
TM_FINAL = 1.1E+8 Hours
Median Lifetime vs. Channel Temperature
FET13
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature (°C)
Datasheet: Rev D 06-01-16
- 5 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Typical Performance
Test conditions unless otherwise noted: VD1 = VD2 = +7 V, ID1 + ID2 = 1000 mA, VG1 = VG2 = −0.7 V, VD3−= +28 V, ID3 = 260 mA,
VG3 = −2.6 V, Temp = +25 °C, Z0 = 50 Ω
S-Parameter vs. Frequency
S-Parameter vs. Frequency
40
40
0
20
-15
15
Gain
IRL
ORL
5
8
Gain
IRL
ORL
5
-25
7
15
15
10
-20
0
6
10
20
9
10
11
Frequency (GHz)
12
13
0
14
25
9
Output Power (dBm), Gain (dB)
Output Power (dBm)
44
42
40
Psat
P1dB
36
34
32
30
28
10
10.5
11
11.5
Frequency (GHz)
12
12.5
45
4500
40
4000
35
3500
30
3000
Pout
Gain
25
20
2500
2000
Id1 + Id2
Id3
15
10
1500
1000
5
500
0
26
9.5
10
10.5
11
Frequency
11.5
15
Gain vs. Frequency vs. Bias (Vd3)
36
34
34
32
32
30
28
6V 700mA
6V 1000mA
7V 700mA
7V 1000mA
20
10
Vd1 = Vd2 = 7 V, Id1 + Id2 = 1000 mA, Vg12 = -0.7 V Typical
38
22
-10
-5
0
5
Input Power (dBm)
Vd3 = 28 V, Id3 = 260 mA, Vg3 = -2.6 V Typical
36
24
-15
Gain vs. Frequency vs. Bias (Vd1 and Vd2)
38
26
0
-20
12
Gain (dB)
Gain (dB)
9.5
Pout, Gain, Id vs. Pin @ 10.5 GHz
Output Power vs. Frequency
46
38
20
30
28
26
25V 260mA
28V 260mA
28V 520mA
28V 650mA
24
22
20
18
Current, Id (mA)
10
25
Return Loss (dB)
-10
5
30
Gain (dB)
25
Return Loss (dB)
-5
30
Gain (dB)
0
35
35
18
9
9.5
Datasheet: Rev D 06-01-16
10
10.5
11
11.5
Frequency (GHz)
12
12.5
- 6 of 17 -
9
9.5
10
10.5
11
11.5
Frequency (GHz)
12
12.5
Disclaimer: Subject to change without notice
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Typical Performance
Psat vs. Frequency vs. Bias (Vd1 and Vd2)
Psat vs. Frequency vs. Bias (Vd3)
Vd3 = 28 V, Id3 = 260 mA, Vg3 = -2.6 V Typical
Vd1 = Vd2 = 7 V, Id1 + Id2 = 1000 mA, Vg12 = -0.7 V Typical
46
46
44
44
42
42
40
40
Psat (dBm)
Psat (dBm)
Test conditions unless otherwise noted: VD1 = VD2 = +7 V, ID1 + ID2 = 1000 mA, VG1 = VG2 = −0.7 V, VD3−= +28 V, ID3 = 260 mA,
VG3 = −2.6 V, Temp = +25 °C, Z0 = 50 Ω
38
36
6V 700mA
6V 1000mA
7V 700mA
7V 1000mA
34
32
30
36
34
25V 260mA
28V 260mA
28V 520mA
28V 650mA
32
30
28
28
26
26
9.5
10
10.5
11
Frequency
11.5
12
9.5
10
11.5
12
P1dB vs. Frequency vs. Bias (Vd3)
Vd3 = 28 V, Id3 = 260 mA, Vg3 = -2.6 V Typical
Vd1 = Vd2 = 7 V, Id1 + Id2 = 1000 mA, Vg12 = -0.7 V Typical
38
40
36
38
34
36
32
34
30
28
26
6V 700mA
6V 1000mA
7V 700mA
7V 1000mA
24
22
20
32
30
28
24
25V 260mA
28V 260mA
28V 520mA
22
28V 650mA
26
20
18
9.5
10
10.5
11
Frequency
11.5
9.5
12
10
10.5
11
Frequency
11.5
12
Power Detector vs. Pout vs. Frequency
AM-PM vs. Pout vs. Frequency
10
50
9.5 GHz
10 GHz
10.7 GHz
11.7 GHz
Vdiff (V) = Vdet - Vref
40
AM-PM (degrees)
10.5
11
Frequency
P1dB vs. Frequency vs. Bias (Vd1 and Vd2)
P1dB (dBm)
P1dB (dBm)
38
9.5 GHz
10 GHz
10.7 GHz
11.7 GHz
30
20
10
1
0.1
0
-10
0.01
10
15
Datasheet: Rev D 06-01-16
20
25
30
35
Output Power (dBm)
40
45
- 7 of 17 -
10
15
20
25
30
35
Output Power (dBm)
40
45
Disclaimer: Subject to change without notice
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Typical Performance
Test conditions unless otherwise noted: VD1 = VD2 = +7 V, ID1 + ID2 = 1000 mA, VG1 = VG2 = −0.7 V, VD3−= +28 V, ID3 = 260 mA,
VG3 = −2.6 V, Temp = +25 °C, Z0 = 50 Ω
TOI vs. Frequency vs. Pout/Tone
60
9
55
8
50
Output TOI (dBm)
Noise Figure (dB)
Noise Figure vs. Frequency
10
7
6
5
4
3
45
40
35
30
Pout/Tone = 31 dBm
Pout/Tone = 33 dBm
Pout/Tone = 35 dBm
25
2
20
1
15
10
0
9.5
10
10.5
11
Frequency
11.5
12
9.5
-15
-15
-20
-20
-25
-25
IM5 (dBc)
IM3 (dBc)
-10
-30
-35
9.5 GHz
10.0 GHz
11.0 GHz
11.5 GHz
-45
-50
-55
11.5
12
9.5 GHz
10.0 GHz
11.0 GHz
11.5 GHz
-30
-35
-40
-45
-50
-55
-60
-60
20
22
24
26
28
30
32
34
Output Power (dBm/Tone)
36
38
20
40
22
24
26
28
30
32
34
Output Power (dBm/Tone)
36
38
TOI vs. Frequency vs. Bias (Vd1 and Vd2)
TOI vs. Frequency vs. Bias (Vd3)
Vd3 = 28 V, Id3 = 260 mA, Vg3 = -2.6 V Typical
Vd1 = Vd2 = 7 V, Id1 + Id2 = 1000 mA, Vg12 = -0.7 V Typical
60
Output TOI @ 35 dBm/Tone (dBm)
Output TOI @ 35 dBm/Tone (dBm)
10.5
11
Frequency (GHz)
IM5 vs. Pout/Tone vs. Frequency
IM3 vs. Pout/Tone vs. Frequency
-10
-40
10
55
50
45
40
35
6V 700mA
6V 1000mA
7V 700mA
7V 1000mA
30
25
20
15
10
9.5
10
Datasheet: Rev D 06-01-16
10.5
11
Frequency (GHz)
11.5
12
- 8 of 17 -
40
60
55
50
45
40
35
25V 260mA
28V 260mA
28V 520mA
30
25
20
28V 650mA
15
10
9.5
10
10.5
11
Frequency (GHz)
11.5
12
Disclaimer: Subject to change without notice
www.qorvo.com
TGA2760-SM
9.5 – 12 GHz Power Amplifier
Typical Performance
Test conditions unless otherwise noted: VD1 = VD2 = +7 V, ID1 + ID2 = 1000 mA, VG1 = VG2 = −0.7 V, VD3−= +28 V, ID3 = 260 mA,
VG3 = −2.6 V, Temp = +25 °C, Z0 = 50 Ω
Gain vs. Frequency vs. Temperature
40
35
Gain (dB)
30
25
20
-40°C
+25°C
+85°C
15
10
5
0
9
9.5
10
10.5
11
11.5
Frequency (GHz)
12
12.5
Output TOI @ 34 dBm Pout/Tone (dBm)
TOI vs. Frequency vs. Temperature
45
60
55
50
45
40
35
-40°C
+25°C
+85°C
30
25
20
15
9.5
44
36
42
34
40
32
P1dB (dBm)
Psat (dBm)
38
38
36
-40°C
+25°C
+85°C
32
30
10.5
11
Frequency
11.5
12
P1dB vs. Frequency vs. Temperature
Psat vs. Frequency vs. Temperature
46
34
10
30
28
26
-40°C
+25°C
+85°C
24
22
28
20
26
18
9.5
10
10.5
11
Frequency
11.5
12
9.5
10
10.5
11
Frequency
11.5
12
Power Detector vs. Pout vs. Temperature
Vdiff (V) = Vdet - Vref
10
-40°C
+25°C
+85°C
1
0.1
0.01
10
Datasheet: Rev D 06-01-16
15
20
25
30
35
Output Power (dBm)
- 9 of 17 -
40
45
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Pin Configuration and Description
20 19 18 17 16 15 14 13 12
21
1
2
3
4
5
6
11
7
8
9
10
Top View
Pin No.
1
Label
RF IN
Description
RF Input, matched to 50 Ω, AC Coupled.
2, 20
VG12
Gate voltage. Bias network is required; can be biased from either pin,
and non-biased pin can be left open; see Application Circuit on page 11
as an example.
3, 6, 9, 10, 16, 19
NC
No internal connection; can be grounded on PCB.
4, 18
VD1
5, 17
VD2
7, 15
VG3
8, 14
VD3
Drain voltage. Bias network is required; see Application Circuit on page
11 as an example.
Drain voltage. Bias network is required; see Application Circuit on page
11 as an example.
Gate voltage. Bias network is required; can be biased from either pin,
and non-biased pin can be left opened; see Application Circuit on page
11 as an example.
Drain voltage. Bias network is required; see Application Circuit on page
11 as an example.
11
RF OUT
12
VREF
Reference diode output voltage.
13
VDET
Detector diode output voltage. Varies with RF output power.
21
GND
Datasheet: Rev D 06-01-16
RF Output, matched to 50 ohms, AC Coupled.
Backside Paddle. Multiple vias should be employed to minimize
inductance and thermal resistance; see Mounting Configuration on page
14 for suggested footprint.
- 10 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Application Circuit
Vg3
Vd3
Vg12
20 19 18 17 16 15 14 13 12
RF IN
TGA2760-SM
1
2
3
4
5
6
7
8
11
RF OUT
9 10
Vg12
Vd3
Vg3
VG12 can be biased from either side, and the non-biased side can be left open.
VD1, VD2, VD3, VG3 must be biased from both sides.
R5, R6 are external resistors, not built on board.
Bias-up Procedure
Bias-down Procedure
VG12 set to −1.5 V
VG3 set to −3.5 V
VD1, VD2 set to +7 V
VD3 sets to +28 V
Adjust VG12 more positive until quiescent ID is 1000 mA.
This will be ~ VG = −0.7 V typical
Adjust VG3 more positive until quiescent ID is 260 mA.
This will be ~ VG = −2.6 V typical
Apply RF signal
Turn off RF signal
Reduce VG12 to −1.5 V. Ensure ID ~ 0 mA
Reduce VG3 to −3.5 V. Ensure ID ~ 0 mA
Turn VD1, VD2, VD3 to 0 V
Datasheet: Rev D 06-01-16
Turn VG12, VG3 to 0 V
- 11 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Application Circuit
PC Board Layout
Board material is RO4003 0.008” thickness with ½ oz copper cladding.
For further technical information, refer to the TGA2760-SM Product Information page.
Bill of Material
Ref Des
Value
Description
C1 – C8
C9 – C18
R1 – R4
U1
100 pF
1 µF
10 Ω
Cap, 0402, +50 V, 5%, COG
Cap, 0603, +50 V, 5%, X5R
Res, 0402, 1/16W, 5%, SMD
9.5 – 12 GHz Power Amplifier
Datasheet: Rev D 06-01-16
- 12 of 17 -
Manufacturer
Part Number
various
various
various
Qorvo
TGA2760-SM
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Mechanical Information
Package Marking and Dimensions
All dimensions are in millimeters.
The TGA2760-SM will be marked with the “TGA2760-SM” designator and a lot code marked below the part designator.
The “M” is the vendor code, and XXXXXXX represents assembly lot number.
This package is lead-free/RoHS-compliant with an embedded heat spreader, and the plating material on the leads is
NiAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow
temperature) soldering processes.
Datasheet: Rev D 06-01-16
- 13 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Mechanical Information
PCB Mounting Pattern
RFout
RFin
Notes:
1. The pad pattern shown has been developed and tested for optimized assembly at Qorvo. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company,
careful process development is recommended.
2. Ground vias are critical for the proper performance of this device. Vias should have a final plated thru diameter of .1524 mm
(.006”).
3. For best thermal performance, vias under the ground paddle should be copper filled.
Datasheet: Rev D 06-01-16
- 14 of 17 -
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Tape and Reel Information
Standard T/R size = 500 pieces on a 7” reel.
Material
Cavity (mm)
Vendor
Vendor P/N
Length
(A0)
Width
(B0)
Depth
(K0)
Pitch
(P1)
Tek-Pak
QFN0500X0500
F-L500
8.4
10.4
2.4
12.0
Datasheet: Rev D 06-01-16
- 15 of 17 -
Distance Between
Centerline (mm)
Length
Width
direction
Direction
(P2)
(F)
8.40
10.40
Carrier
Cover Carrier
Tape (mm)
(mm)
Width
(W)
Width
(W)
12.0
24.0
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TGA2760-SM
9.5 – 12 GHz Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with lead-free soldering processes,
maximum reflow temperature.
260 °C
Caution! ESD-Sensitive Device
Package lead plating: NiAu.
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passed 250 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
The use of no-clean solder to avoid washing after
soldering is recommended.
ESD Rating:
Value:
Test:
Standard:
Class C2a
Passed 500 V
Charge Device Model (CDM)
JEDEC Standard JS-002-2014
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
RoHs Compliance
MSL Rating
MSL Rating: 3
Test:
260 °C convection reflow
Standard:
JEDEC Standard IPC/JEDEC J-STD-020
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
Recommended Solder Temperature Profile
Datasheet: Rev D 06-01-16
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Disclaimer: Subject to change without notice
www.qorvo.com
TGA2760-SM
9.5 – 12 GHz Power Amplifier
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Email: customer.support@qorvo.com
For technical questions and application information:
Tel: 1-844-890-8163
Email: info-networks@qorvo.com
Important Notice
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information
contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein.
Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or
death.
Datasheet: Rev D 06-01-16
- 17 of 17 -
Disclaimer: Subject to change without notice
www.qorvo.com