2015-12-14
Infrared-Emitter (850 nm) and Si-Phototransistor
Version 1.3
SFH 7250
Features:
•
Available on tape and reel
•
SMT package with IR emitter (850 nm) and Si-phototransistor
•
Suitable for SMT assembly
•
Emitter and detector can be controlled separately
•
The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification
for Automotive Grade Discrete Semiconductors.
Applications
•
Data transmission
•
Lock bar
•
Infrared interface
Ordering Information
Type:
Package:
Ordering Code
SFH 7250
SMT Multi TOPLED®
Q65111A3188
2015-12-14
1
Version 1.3
SFH 7250
Maximum Ratings
Parameter
Symbol
Values
Unit
Operating and storage temperature range
Top; Tstg
-40 ... 100
°C
Junction temperature
Tj
100
°C
Electrostatic discharge
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD
2000
V
Emitter 1
Forward current
IF
70
mA
Surge current
(tp ≤ 10 µs, D = 0)
IFSM
0.7
A
Reverse voltage
VR
5
V
Ptot
140
mW
RthJA
500
K/W
RthJS
400
K/W
Collector current
IC
15
mA
Surge current
(tp ≤ 10 µs, D = 0)
IFSM
0.075
Collector surge current
(τ < 10 µs)
ICS
75
mA
Collector-emitter voltage
VCE
35
V
Total Power dissipation
Ptot
165
mW
RthJA
450
K/W
Power consumption
Thermal resistance junction - ambient
1) page 16
Thermal resistance junction - solder point
Phototransistor
Thermal resistance
1) page 16
A
The stated maximum ratings refer to one chip.
Characteristics
Parameter
Symbol
Values
Unit
Emitter 1
(TA = 25 °C)
Peak wavelength
(IF = 70 mA, tp = 20 ms)
(typ)
λpeak
860
nm
Centroid wavelength
(IF = 70 mA, tp = 20 ms)
(typ)
λcentroid
850
nm
2015-12-14
2
Version 1.3
SFH 7250
Parameter
Symbol
Values
Unit
nm
Spectral bandwidth at 50% of Imax
(IF = 70 mA, tp = 20 ms)
(typ)
∆λ
30
Half angle
(typ)
ϕ
± 60
Dimensions of active chip area
(typ)
LxW
Rise and fall time of Ie ( 10% and 90% of Ie max)
(IF = 70 mA, RL = 50 Ω)
(typ)
tr, tf
Forward voltage
(IF = 70 mA, tp = 20 ms)
0.2 x 0.2
°
mm x
mm
12
ns
(typ (max)) VF
1.6 (≤ 2)
V
Forward voltage
(IF = 500 mA, tp = 100 µs)
(typ (max)) VF
2.4 (≤ 3)
V
Reverse current
(VR = 5 V)
(typ (max)) IR
not designed for
reverse operation
µA
Total radiant flux
(IF = 70 mA, tp = 20 ms)
(typ)
Φe
40
mW
Min Radiant Intensity
(IF = 70 mA, tp = 20 ms)
Ie, min
6.3
mW / sr
Radiant intensity
(IF = 70 mA, tp = 20 ms)
Ie, typ
10
mW/sr
Typ Radiant Intensity
(IF = 500 mA, tp = 100 µs)
Ie, typ
60
mW / sr
Temperature coefficient of Ie or Φe
(IF = 70 mA, tp = 20 ms)
(typ)
TCI
-0.5
%/K
Temperature coefficient of VF
(IF = 70 mA, tp = 20 ms)
(typ)
TCV
-0.7
mV / K
Temperature coefficient of wavelength
(IF = 70 mA, tp = 20 ms)
(typ)
TCλ
0.3
nm / K
Wavelength of max. sensitivity
(typ)
λS max
990
nm
Spectral range of sensitivity
(S = 10% of Smax)
(typ)
λ
440 ... 1150
nm
Radiant sensitive area
(∅ = 240 µm)
(typ)
A
0.038
mm2
Dimensions of chip area
(typ)
LxW
(typ) 0.45 x
0.45
mm x
mm
Distance chip front to case surface
(typ)
H
(typ) 0.5 ...
0.7
mm
Phototransistor
(TA = 25 °C, λ = 880 nm)
2015-12-14
3
Version 1.3
SFH 7250
Parameter
Symbol
Half angle
(typ)
ϕ
Capacitance
(VCE = 0 V, f = 1 MHz, E = 0)
(typ)
CCE
Dark current
(VCE = 25 V, E = 0)
(typ (max)) ICE0
Photocurrent
(λ = 880 nm, Ee = 0.1 mW/cm2, VCE = 5 V)
Values
± 60
Unit
°
5
pF
1 (≤ 200)
nA
IPCE
≥ 16
µA
7
µs
150
mV
Rise and fall time
(IC = 1 mA, VCC = 5 V, RL = 1 kΩ)
(typ)
tr, tf
Collector-emitter saturation voltage
(IC = 5 µA, Ee = 0.1 mW/cm2)
(typ)
VCEsat
Grouping (TA = 25 °C)
Group
Min Radiant Intensity
Max Radiant Intensity
Typ Radiant Intensity
IF = 70 mA, tp = 20 ms
IF = 70 mA, tp = 20 ms
IF = 500 mA, tp = 100 µs
Ie, min
Ie, max
Ie, typ
SFH 7250-Q
6.3
12.5
55
SFH 7250-R
10
20
90
Note:
Measured at a solid angle of Ω = 0.01 sr.
2015-12-14
4
Version 1.3
SFH 7250
Relative Spectral Emission 2) page 16
(typ) Irel = f(λ), TA = 25°C
Radiant Intensity 2) page 16
Ie / Ie(70 mA) = f(IF), single pulse, tp = 25 µs
OHF04132
100
OHF04406
101
I rel %
Ie
I e (70 mA)
80
100
5
60
10-1
5
40
10-2
20
5
0
700
750
800
10-3 0
10
nm 950
850
5 10 1
5 10 2 mA
λ
IF
Forward Current 2) page 16
IF = f(VF), TA = 25 °C
Max. Permissible Forward Current
IF, max = f(TA)
IF
OHF03732
80
mA
10 3
IF
70
OHF03826
100
A
10-1
60
5
50
10-2
40
5
30
10-3
20
5
10
0
0
20
40
60
80
10-4
100 ˚C 120
0.5
1
1.5
2
2.5 V 3
VF
TA
2015-12-14
0
5
Version 1.3
SFH 7250
Relative Spectral Sensitivity 2) page 16
Srel = f(λ), TA = 25°C
Permissible Pulse Handling Capability
IF = f(tp), TA = 25 °C, duty cycle D = parameter
IF
OHF03733
0.7
A
t
tP
IF
D = TP
0.6
Srel
OHF00207
100
%
T
80
0.5
D=
70
0.005
0.01
0.02
0.05
0.1
0.2
0.3
0.5
1
0.4
0.3
0.2
60
50
40
30
20
0.1
10
0
400 500 600 700 800 900
0 -5
10 10-4 10-3 10-2 10-1 100 101 s 102
tp
Photocurrent 2) page 16
IPCE = f(Ee), VCE = 5 V, TA = 25°C
Photocurrent 2) page 16
IPCE = f(VCE), Ee = Parameter, TA = 25°C
mW
1 2
cm
Ι PCE
Ι PCE
10
OHF01529
10 0
mA
OHF00312
10 3
µA
nm 1100
λ
2
0.5
mW
cm 2
0.25
mW
cm 2
0.1
mW
cm 2
10 -1
10 1
10 0
10 -1
10 -3
10 -2
m W/cm 2
10 -2
10 0
Ee
2015-12-14
6
0
5
10
15
20
25
30 V 35
V CE
Version 1.3
SFH 7250
Photocurrent 2) page 16
IPCE / IPCE(25°C) = f(TA), VCE = 5 V
Ι PCE
Ι PCE 25
Dark Current 2) page 16
ICEO = f(VCE), E = 0, TA = 25°C
OHF01527
10 1
nA
OHF01524
1.6
Ι CEO
1.4
10 0
1.2
1.0
10 -1
0.8
0.6
10 -2
0.4
0.2
0
-25
0
25
50
10 -3
75 C 100
TA
Dark Current 2) page 16
ICEO = f(TA), VCE = 5 V, E = 0
0
5
10
15
20
25
30 V 35
V CE
Collector-Emitter Capacitance 2) page 16
CCE = f(VCE), f = 1 MHz, E = 0, TA = 25°C
OHF01530
10 3
nA
OHF01528
5.0
Ι CEO
C CE pF
4.0
10 2
3.5
3.0
10 1
2.5
2.0
1.5
10 0
1.0
0.5
10 -1
-25
2015-12-14
0
25
50
0
10 -2
75 ˚C 100
TA
7
10 -1
10 0
10 1 V 10 2
V CE
Version 1.3
SFH 7250
Power Consumption
Ptot = f(TA)
OHF00871
200
mW
P tot
160
120
80
40
0
20
0
40
60
80 ˚C 100
TA
Emitter Radiation Characteristics / Phototransistor Directional Characteristics 2) page 16
Irel = f(ϕ) / Srel = f(ϕ)
40˚
30˚
20˚
10˚
0˚
ϕ
50˚
OHL01660
1.0
0.8
0.6
60˚
0.4
70˚
0.2
80˚
0
90˚
100˚
1.0
2015-12-14
0.8
0.6
0.4
0˚
20˚
8
40˚
60˚
80˚
100˚
120˚
Version 1.3
SFH 7250
Package Outline
Dimensions in mm (inch).
Pinning
Pin
Description
1
Anode Emitter 1
2
Cathode Emitter 1
3
Collector Phototransistor
4
Emitter Phototransistor
Package
Multi TOPLED
Approximate Weight:
34.0 mg
2015-12-14
9
Version 1.3
SFH 7250
Recommended Solder Pad
Dimensions in mm (inch).
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020D.01
OHA04525
300
˚C
T 250
Tp 245 ˚C
240 ˚C
tP
217 ˚C
200
tL
150
tS
100
50
25 ˚C
0
0
50
100
150
200
250
s 300
t
2015-12-14
10
Version 1.3
SFH 7250
OHA04612
Profile Feature
Profil-Charakteristik
Symbol
Symbol
Pb-Free (SnAgCu) Assembly
Minimum
Recommendation
Maximum
2
3
100
120
2
3
)
Ramp-up rate to preheat*
25 °C to 150 °C
Time tS
TSmin to TSmax
tS
60
Ramp-up rate to peak*)
TSmax to TP
Unit
Einheit
K/s
s
K/s
Liquidus temperature
TL
217
Time above liquidus temperature
tL
80
100
s
Peak temperature
TP
245
260
°C
Time within 5 °C of the specified peak
temperature TP - 5 K
tP
20
30
s
3
6
K/s
10
Ramp-down rate*
TP to 100 °C
°C
480
Time
25 °C to TP
s
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
Taping
2.9 (0.114)
4 (0.157)
Dimensions in mm (inch).
2015-12-14
11
8 (0.315)
Cathode/Collector Marking
1.75 (0.069)
2 (0.079)
3.5 (0.138)
4 (0.157)
3.6 (0.142)
1.5 (0.059)
OHAY0536
Version 1.3
SFH 7250
Tape and Reel
8 mm tape with 2000 pcs. on ∅ 180 mm reel, 8000 pcs. on ∅ 330 mm reel
W1
D0
P0
A
N
F
W
E
13.0 ±0.25
P2
Label
P1
Direction of unreeling
Direction of unreeling
W2
Leader: min. 400 mm *
Trailer: min. 160 mm *
*) Dimensions acc. to IEC 60286-3; EIA 481-D
OHAY0324
Tape dimensions [mm]
Tape dim ensions in m m
W
P0
P1
P2
D0
E
F
8 + 0.3 / -0.1
4 ± 0.1
2 ± 0.05
or
4 ± 0.1
2 ± 0.05
1.5 ± 0.1
1.75 ± 0.1
3.5 ± 0.05
Reel dimensions [mm]
Reel dim ensions in m m
A
W
Nmin
W1
W2max
180
8
60
8.4 + 2
14.4
A
W
Nmin
W1
W2max
330
8
60
8.4 + 2
14.4
Reel dim ensions in m m
2015-12-14
12
Version 1.3
SFH 7250
Barcode-Product-Label (BPL)
OSRAM Opto
EX
A
RoHS Compliant
(6P) BATCH NO: 1234567890
(1T) LOT NO: 1234567890
BIN1: XX-XX-X-XXX-X
LX XXXX
Semiconductors
MP
(9D) D/C: 1234
ML Temp ST
X XXX °C X
Pack: RXX
LE
DEMY
XXX
X_X123_1234.1234 X
(X) PROD NO: 123456789(Q)QTY:
9999
(G) GROUP:
XX-XX-X-X
OHA04563
Dry Packing Process and Materials
Moisture-sensitive label or print
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Humidity indicator
Barcode label
Please check the HIC immidiately after
bag opening.
Discard if circles overrun.
Avoid metal contact.
Do not eat.
Comparator
check dot
WET
If wet,
examine units, if necessary
bake units
15%
If wet,
examine units, if necessary
bake units
10%
5%
If wet,
parts still adequately dry.
change desiccant
Humidity Indicator
MIL-I-8835
AM
OSR
Desiccant
OHA00539
Note:
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card.
Regarding dry pack you will find further information in the internet. Here you will also find the normative
references like JEDEC.
2015-12-14
13
Version 1.3
SFH 7250
Transportation Packing and Materials
Barcode label
8
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M
DE
R
18
-1
P
-1
+
Q
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99
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21
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(9
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(6
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NO
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11
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(1
T)
NO
:
PR
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)
(X
Packing
Sealing label
Dimensions of transportation box in mm
Width
Length
Height
200 ± 5
352 ± 5
195 ± 5
352 ± 5
30 ± 5
33 ± 5
2015-12-14
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Barcode label
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OHA02044
Version 1.3
SFH 7250
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
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Version 1.3
SFH 7250
Glossary
1)
Thermal resistance: junction -ambient, mounted on PC-board (FR4), padsize 16 mm2 each
2)
Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily
correspond to the actual parameters of each single product, which could differ from the typical data and calculated
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data
will be changed without any further notice.
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Version 1.3
SFH 7250
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
2015-12-14
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