ARTICLE IN PRESS Solar Energy Materials & Solar Cells 90 (2006) 798–812 www.elsevier.com/locate/solmat Characterization of high-photovoltage CuPc-based solar cell structures V.P. Singha,, B. Parsarathya, R.S. Singha, A. Aguileraa, J. Anthonyb, M. Payneb a Electrical and Computer Engineering Department and Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, KY 40506, USA b Chemistry Department, University of Kentucky, Lexington, KY 40506, USA Available online 10 May 2005 Abstract Organic solar cells of the configuration ITO/PEDOT:PSS/CuPc/PTCBI/Al (Indium Tin Oxide/poly(3,4-ethylenedioxythiophene): polystyrene sulfonic acid/Copper phthalocyanine/ 3,4,9,10-perylenetetracarboxylic bisbenzimidazole/Aluminum ) were investigated. A high open circuit voltage (V OC ) of 1.15 V was obtained when the PTCBI layer was 7 nm thick. Lower Voc values were observed for the same structure with silver, copper and gold electrodes instead of aluminum. However, short-circuit current density (J SC ) with these electrodes was much higher (4 mA/cm2) than in the case of aluminum (0.12 mA/cm2). Incorporating a 10 nm thick CdS interlayer between PTCBI and aluminum resulted in an increase in current density to 0.3 mA/ cm2. Results were interpreted in terms of a modified CuPc/Al Schottky diode for the thin PTCBI case and a CuPc/PTCBI heterojunction for the thick PTCBI case. Also, the formation of a thin, protective aluminum oxide layer under the aluminum electrode was postulated. For devices with silver, copper and gold electrodes, absence of this protective layer was thought to be the cause of a relatively lower V oc and higher J SC . r 2005 Elsevier B.V. All rights reserved. Keywords: CuPc/PTCBI solar cells; Organic semiconductors; Electron transport modeling Corresponding author. Tel.: +1 859 257 3243; fax: +1 859 257 3092. E-mail address: vsnigh@engr.uky.edu (V.P. Singh). 0927-0248/$ - see front matter r 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.solmat.2005.04.016 ARTICLE IN PRESS V.P. Singh et al. / Solar Energy Materials & Solar Cells 90 (2006) 798–812 799 1. Introduction Organic solar cells are of interest because of their potential as flexible, lightweight and inexpensive devices that can power portable electronics, from personal gadgets to space exploration probes [1,2]. Copper phthalocyanine (CuPc) has been used extensively as an absorber in organic solar cells due to its marked photovoltaic effect and photoconductivity characteristics [2–5]. Under ‘‘one Sun’’ illumination, Tang [3] achieved an open circuit voltage (V OC ) of 450 mV and a short circuit current density (J SC ) of 2.3 mA/cm2 in CuPc-based devices. Later, Peumans et al reported a V OC of 480 mV and J SC of 4.2 mA/cm2 in this system [4]. Also, using a triple junction and a silver electrode, this group [5] achieved a V OC of 1.2 V and J SC of 4.5 mA/cm2. Even though there has been substantial progress in these devices, short circuit current density remains much lower than in thin film solar cells based on inorganic semiconductors [6–9], and the mechanisms of carrier generation and transport are not as well understood [7–9]. Clearly, an improved understanding of device physics and novel device designs are needed for further advances in organic solar cells. In this article, we report on the characteristics of a single-heterojunction CuPc/ PTCBI/Al device structure that exhibited a V OC of 1.15 V and a J SC of 0.125 mA/ cm2. Also, variations on this basic structure, including a variety of electrode materials and incorporation of CdS, were investigated with a view toward understanding the physics of device behavior. Experimental procedures and results are presented in Sections 2 and 3 and an interpretative discussion is offered in Section 4. 2. Experimental procedures Fig. 1 shows the configuration of our basic experimental device. ITO-coated glass substrates (Delta Technologies Inc., Rs ¼ 4–6 O/Square) were sonicated in acetone, in methanol and dried under nitrogen flow. To aid CuPc deposition and the formation of an ITO/CuPc ohmic contact, a thin (3 nm) buffer layer of PEDOT:PSS (Aldrich) was spin-coated on ITO and subsequently annealed in vacuum at 100 1C for 15 min. Layers of CuPc (99.995%) and PTCBI, as well as the metallic electrode were thermally evaporated under vacuum (106 Torr). Aluminum, silver, copper and gold electrodes were thermally evaporated through a mask with 1/8-inch diameter holes, resulting in multiple devices, each with an area of 0.079 cm2. Electrical characterization was performed with an automated I–V tester, solar simulator and an HP 4192A LF impedance analyzer. Scanning electron microscopy was done with a Hitachi S-900 FE-SEM. 3. Results 3.1. Cell characteristics Current–voltage (I2V ) characteristics of the cell of Fig. 1, in dark and under ‘‘one Sun’’ illumination (100 mW/cm2), are plotted in Fig. 2. A V OC of 1.15 V was ID 80791 Title Characterizationofhigh-photovoltageCuPc-basedsolarcellstructures http://fulltext.study/article/80791 http://FullText.Study Pages 15