HITFET® BSP 75
Smart Lowside Power Switch
Features
Product Summary
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
• Logic Level Input
• Input protection (ESD)
• Thermal shutdown (with restart)
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
VDS
RDS(ON)
ID(lim)
ID(Nom)
EAS
55
550
1
0.7
550
V
mΩ
A
A
mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
V bb
+
LOAD
M
Drain
2
Overvoltage
protection
dv/dt
1
IN
limitation
Short circuit
protection
Overtemperature
protection
ESD
Short
circuit
Current
protection
limitation
Source
3

HITFET
4
Pin
Symbol
Function
1
IN
Input
2
DRAIN
Output to the load
3
SOURCE
Ground
TAB
SUBSTRATE
Must be connected to Pin 3
Semiconductor Group
Page 1 of 9
1998-02-04
HITFET® BSP 75
Maximum Ratings at Tj=25°C unless otherwise specified
Parameter
Continuous drain source voltage
(overvoltage protection see page 4)
Drain source voltage for
short circuit protection
Load dump protection VLoadDump=UP+US; UP=13.5 V
RI1)=2 Ω; td=400ms; IN=low or high (8V)
RL=50 Ω
RI=2 Ω; td=400ms; IN=high (8V)
RL=22 Ω
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation (DC)
Unclamped single pulse inductive energy
ID(ISO) = 0.7 A
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VDS
Thermal resistance
RthJS
RthJA
junction soldering point:
junction - ambient 3):
Values
VDS
55
Unit
V
32
V
VLoadDump2)
VIN
VIN
Tj
Tstg
Ptot
EAS
V
80
47
-0.2 ... +10
-0.2 ... +20
-40 ...+150
-55 ...+150
1.8
550
W
mJ
4000
V
VESD
V
V
°C
E
40/150/56
≤10
≤70
K/W
1)
RI=internal resistance of the load dump test pulse generator LD200
VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.
3)
Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm 2 copper area for pin 4 connection
2)
Semiconductor Group
Page 2
1998-02-04
HITFET® BSP 75
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain source clamp voltage
ID = 10 mA
Tj =-40...+150°C:
Off state drain current
VIN = 0 V, VDS = 32 V
Tj =-40...+150°C:
Input threshold voltage ID = 10 mA
Input current
normal operation, ID<ID(lim):
VIN = 5 V
current limitation mode, ID=ID(lim):
after thermal shutdown, ID=0 A:
On-state resistance
ID = 0.7 A, VIN = 5 V
Tj=25°C:
Tj=150°C:
On-state resistance
ID = 0.7 A, VIN = 10 V
Tj=25°C:
Tj=150°C:
Nominal load current
VBB = 12 V, VDS = 0.5 V, TS = 85°C
Tj < 150°C
Current limit
VIN = 10 V, VDS = 12 V
Dynamic characteristics
Turn-on time
VIN to 90% ID:
RL = 22 Ω, VIN= 0 to 10 V, V bb= 12 V
Turn-off time
VIN to 10% I D:
RL = 22 Ω, VIN= 10 to 0 V, V bb= 12 V
Slew rate on
70 to 50% V bb:
RL = 22 Ω, VIN = 0 to 10 V, V bb = 12 V
Slew rate off
50 to 70% V bb:
RL = 22 Ω, VIN= 10 to 0 V, V bb= 12 V
Semiconductor Group
Page 3
VDS(AZ)
Values
min
typ
max
Unit
55
--
70
V
--
--
5
µA
2
--1000
2.5
100
200
1500
3
200
300
2000
V
µA
RDS(on)
---
550
850
675
1350
mΩ
RDS(on)
475
750
--
550
1000
--
mΩ
ID(Nom)
--0.7
ID(lim)
1
1.5
1.9
A
ton
--
10
20
µs
toff
--
10
20
µs
-dVDS/dt on
--
4
10
V/µs
dVDS/dt off
--
4
10
V/µs
IDSS
VIN(th)
IIN(1)
IIN(2)
IIN(3)
A
1998-02-04
HITFET® BSP 75
Parameter and Conditions
Symbol
at Tj = 25 °C, unless otherwise specified
Protection Functions
Thermal overload trip temperature
Tjt
Thermal hysteresis
∆Tjt
Unclamped single pulse inductive energy
ID(ISO)=0.7 A, Vbb=32 V
Tj=25 °C EAS
Tj=150 °C
Inverse Diode
Continuous source drain voltage
VIN = 0 V, -ID = 2*0.7 A
VSD
Values
min
typ
max
Unit
150
--
165
10
---
°C
K
550
200
---
---
mJ
--
1
--
V
Circuit Description
The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designed
for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications.
Protection functions
• Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about
63 V) when inductive loads are switched off.
• Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the overtemperature threshold is
reached.
• Overtemperature and short circuit protection: This protection is based on sensing the
chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).
Semiconductor Group
Page 4
1998-02-04
HITFET® BSP 75
Block diagram
Inductive and overvoltage output clamp
Terms
V
D
Z
RL
S
2
I IN
1
D
IN
ID
VDS
HITFET
Vbb
HITFET
S
3
VIN
VIN
Input circuit (ESD protection)
VDS(AZ)
VDS
IN
ESD-ZD I
VBB
Source
t
ESD zener diodes are not designed for DC
current.
Turn on into overload or short circuit
VIN
ID
ID(lim)
t
Shut down by overtemperature and restart by
cooling. Current internally limited at I D(lim).
Semiconductor Group
Page 5
1998-02-04
HITFET® BSP 75
Maximum allowable power dissipation
Ptot = f (TC)
On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 10 V
Ptot [W]
RON [mΩ]
2
1 000
1.8
900
1.6
800
1.4
700
1.2
600
1
500
0.8
400
0.6
300
0.4
200
0.2
100
0
m a x.
typ .
0
0
25
50
75
10 0
125
150
-50
-2 5
0
25
50
75
100 125
TC [°C]
150
Tj [°C]
On-state resistance
RON = f (Tj); ID= 0.7 A; VIN= 5 V
Typ. input threshold voltage
VIN(th) = f (Tj); ID= 10 mA; VDS= 12 V
RON [mΩ]
VIN(th) [V]
3
1 400
1 200
2.5
1 000
2
m a x.
800
1.5
600
typ .
1
400
0.5
200
0
0
-50
-2 5
0
25
50
75
100 125
150
Tj [°C]
Semiconductor Group
Page 6
-50
-25
0
25
50
75
1 00
12 5
150
Tj [°C]
1998-02-04
HITFET® BSP 75
Typ. on-state resistance
RON = f (VIN) ID= 0.7 A; Tj= 25°C
Typ. current limitation
ID(lim) = f (Tj); VDS=12V, VIN= 10V
RON [mΩ]
ID(lim) [A]
1.5
2 000
1.4
1 500
1.3
1 000
1.2
500
1.1
1
0
0
2
4
6
8
-50
10
-25
0
25
50
75
1 00
12 5
150
Tj [°C]
VIN [V]
Transient thermal impendance
ZthJC = f (tp)
Parameter: D=tp/T
ZthJC [K/W]
Typ. short circuit current
ID(SC) = f (VIN); VDS=12V, Tj= 25°C
ID(SC) [A]
1 E+ 2
1.6
D=
0.5
1.4
0.2
1 E+ 1
1.2
0.1
0.05
1
0.01
1 E+ 0
0.8
0.02
P tot
0.005
tp
0.6
t
T
1E-1
0.4
0.2
0
VIN [V]
Semiconductor Group
Page 7
1E+4
1E+3
1E+2
1E+1
1E+0
10
1E-1
8
1E-2
6
1E-3
4
1E-4
2
1E-5
0
1E-6
1E-2
0
tp [s]
1998-02-04
HITFET® BSP 75
Application examples:
Status signal of thermal shutdown by monitoring
input current
R St
IN
µC
VIN
D
HITFET
Vbb
S
∆V
VIN
thermal shutdown
Semiconductor Group
Page 8
1998-02-04
HITFET® BSP 75
Package and ordering code
all dimensions in mm
SOT223/4
Ordering code
Q67060-S7200-A2
BSP75
Definition of soldering point with temperature Ts:
upper side of solder edge of device pin 4.
Pin 4
Semiconductor Group
Page 9
1998-02-04
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.