RFMD .
Open Foundry Services
®
Our open foundry exists to provide all customers with access
to our premium III-V technology portfolio and leverage our
commercial scale, experience, and resources to offer costeffective turn-key solutions. Our dedicated and focused
support teams, custom services and advanced engineering,
combined with our technology, make RFMD a preferred
foundry partner.
High Power GaN
RFMD GaN: Multiple Benefits
RFMD® GaN is production ready. It’s a mature, robust
RFMD GaN Technologies
technology with extraordinary reliability. Compared to GaAs
• 0.5μm gate length HEMT transistor AlGaN/GaN on SiC
• MTTF > 1 x 107 hours at TCHANNEL = 200°C
• 100Ω/o thin film resistor and high-resistance epi resistor
• 135pf/mm2 MIM capacitor with 340V breakdown
• Through wafer vias
and Si, RFMD GaN has much higher breakdown voltage
and power densities, enabling applications not possible
with competing process technologies. RFMD’s GaN high
power density also allows for smaller devices, reducing the
GaN Process Technology Offerings
GaN1 - High Power
• Power density – up to 8W/mm
• High breakdown voltage >400V
• Enables 65V operation
GaN2 - High Linearity
• Enhanced linearity versus GaN1
• 22dB better IM3
- Power density – up to 4W/mm
- High breakdown voltage >300V
• Enables 48V operation
GaN3 - High Power & High Linearity
• Optimized power process for high
linearity applications
• 36V 65V operation
• Improved linearity over GaN1
• Power Density up to 5.5W/mm
• High peak efficiency
capacitance enabling high impedances, wider bandwidths,
RFMD GaN: Manufacturing Process
and reduced cost. Additional benefits include reduced circuit
RFMD has defined a GaN production model that best
complexity, industry-leading efficiency of operation, reduced
leverages the cost advantages attained by manufacturing
cooling requirements, and lighter weight.
in our existing wafer factory—the world’s largest III-V
commercial wafer factory—located near RFMD’s corporate
headquarters in Greensboro, North Carolina. Commercializing
semiconductor processes is an RFMD strength forged with
the successful release of the industry’s first GaAs HBT
power amplifier for the high-volume cellular handset market.
Now offering Package Assembly and Test Services from
RFMD Open Foundry Services
From die probe/pick through assembly and test, RFMD offers turn-key packaging
services for both high volume commercial and military application. RFMD has
extensive experience in analyzing customer requirements and our dedicated staff
provides the highest quality of workmanship, regardless of complexity.
rGaN-HV™ - High Voltage
• 1.0μm gate-length pHEMT transistor
AlGaN/GaN on SiC
• High peak current density
• Ultra-fast switching time
• Ultra-high breakdown voltage >1000V
• Enables 600V operation
• RFMD’s best-in-class cycle time
• Prototype and shuttle lot cycle time = 6 weeks*
• Production lot cycle time = 6 weeks*
*Time from receipt of DRC clean layout file to delivery of standard
processed wafers/die.
MPG.High Power GaN.0513.100
(GaN) transistors for the wireless infrastructure, commercial,
and military markets.
FEATURES
•Milcom
• Electronic warfare
• Industrial, scientific, medical
• Cellular BTS
• Digital video broadcast
• CATV line amplifiers
• Military and civilian radar
• Public mobile radio
Industry-Leading Cycle Time from RFMD
*Estimate based on published GaAs cycle times/GaN assumed to be equal to GaAs cycle times
For more information on RFMD Open Foundry Services, contact: RFMDFoundryServices@rfmd.com
or visit www.rfmd.com/foundry
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks
and registered trademarks are the property of their respective owners. ©2013 RFMD.
Applying that knowledge to the development of gallium nitride
Power IC
Broadband Power Transistor (BPT)
FEATURES
• Advanced GaN HEMT technology
• Advanced heat-sink technology
• Input internally matched to 50Ω
• High power added efficiency
• -40oC to 85oC operating temperature
• Wide instantaneous bandwidth
• Large signal models available
• EAR99 export control
RFMD’s Power ICs are wideband power amplifiers designed
for CW and pulsed applications such as wireless infrastructure,
radar, two-way radios, and general purpose TX amplification.
These input matched GaN transistors are packaged in an air
cavity ceramic package, which provides excellent thermal
stability through the use of advanced heat-sink and power
dissipation technologies.
RFMD’s high-power GaN broadband power transistors are
optimized for commercial infrastructure, military communication,
and general purpose amplifier applications in the 700MHz to
2.2GHz frequency band, ideal for constant envelope,
pulsed, WCDMA, and LTE applications. They are input matched
GaN transistors packaged in an air cavity ceramic package,
which provides excellent thermal stability.
FEATURES
• Advanced GaN HEMT technology
• High peak modulated power
• Advanced heat-sink technology
• -25oC to 85oC operating temperature
• Optimized for video bandwidth and
minimized memory effects
• RF-tested for 3GPP performance
• RF-tested for peak power using IS95
SPECIFICATIONS
SPECIFICATIONS
Freq Range
(Min) (MHz)
Freq Range
(Max) (MHz)
Gain
(dB)
OP3dB
(dBm)
Power Added
Efficiency
(%)
30
50
30
225
2500
1000
512
1215
11.0
16.0
18.5
16.6
39.0
41.3
39.5
39.4
40
60
70
62.5
VD
(V)
ID
(mA)
Package
Part
Number
28
28
28
28
55
88
55
88
AIN SOIC-8
AIN SOIC-8
AIN SOIC-8
AIN SOIC-8
RF3826
RFHA1000
RFHA1003
RFHA1006
FEATURES
• Wideband frequency operation
• Advanced GaN HEMT technology
• High peak efficiency and peak power
• Optimized evaluation board layout for 50Ω operation
• Integrated matching components for high terminal impedances
SPECIFICATIONS
Freq Range
(Min) (MHz)
Freq Range
(Max) (MHz)
Gain
(dB)
PSAT
(dBm)
Drain Efficiency
(%)
VD
(V)
ID
(mA)
Package
Part
Number
2800
1200
1200
960
3400
1400
1400
1200
12.0
15.0
15.0
17.0
54.5
54.5
53.5
54.5
52
55
58
55
50
50
36
50
440
440
440
440
RF565-2
RF565-2
RF565-2
RF565-2
RF3928
RFHA1020
RFHA1023
RFHA1025
Unmatched Power Transistor (UPT)
OP1dB
(dBm)
ACP at 7.5dB PAR
(dBc)
Drain Efficiency
(%)
VD
(V)
ID
(mA)
Package
Part
Number
1800
1800
700
700
2200
2200
1000
1000
15.0
15.5
20.0
20.0
180
90
180
90
-36
-36
-32
-34
36.6
35.0
39.0
38.0
48
48
48
48
600
300
600
300
RF400-2
RF400-2
RF400-2
RF400-2
RFG1M20180
RFG1M20090
RFG1M09180
RFG1M09090
RFMD’s GaN-on-SiC high power discrete RF switches are
designed for military and commercial wireless infrastructure,
industrial/scientific/medical, and general purpose broadband RF
control and switching applications. The RFSW2100 is an SPDT
RF switch suitable for many applications with 45W CW input
0.1dB power compression.
FEATURES
• Advanced GaN HEMT technology
• 40V control
• Low insertion loss, high isolation
• 50Ω input/output
SPECIFICATIONS
Freq Range
(GHz)
PO.1dB
(W)
Insertion Loss
at 2GHz
(dB)
Isolation
at 2GHz
(dB)
Switching
Speed
(nS)
Control
Voltage
(V)
IQ
(uA)
Package
Part
Number
DC to 6
45
0.3
-37
40.0
-40
200
QFN
RFSW2100
The RFHA1101 is a 28V, 4.3W, GaN-on-SiC high power discrete
amplifier die-on-carrier designed for commercial wireless
infrastructure, cellular and WiMAX infrastructure, industrial/
scientific/medical, and general purpose broadband amplifier
applications. Using an advanced high power density GaN
semiconductor process, the RFHA1101 is able to achieve high
efficiency and flat gain over a broad frequency range in a
single amplifier design.
Freq Range
(GHz)
P3dB at
900MHz
(W)
Linear Gain
at 900MHz
(dB)
Drain Eff.
at 900MHz
(%)
P3dB at
2.1GHz
(W)
Linear Gain
at 2.1GHz
(dB)
Drain Eff.
at 2.1GHz
(%)
VD
(V)
IDQ
(mA)
Package
Part
Number
DC to 3.5
DC to 3.5
DC to 3
DC to 3.5
50
76
90
145
20
21
21
21
65
68
75
75
45
74
90
140
15
14
14
13
65
65
60
60
48
48
48
48
130
220
300
440
Ceramic 360 Bolt Down
Ceramic 360 Bolt Down
Ceramic 360 Bolt Down
Ceramic 360 Bolt Down
RF3931
RF3932
RF3933
RF3934
Note: also available in die form.
Gain
(dB)
GaN-on-SiC Power Amplifiers
FEATURES
• Broadband operation
• Advanced GaN HEMT technology
• Advanced heat-sink technology
• EAR99 Export Control
RFMD’s UPT products are high power GaN unmatched power
transistors designed for CW and pulsed applications. Using an
advanced 0.5μm GaN high electron mobility transistor (HEMT)
semiconductor process, these high-performance amplifiers
show excellent peak drain efficiency and flat gain over a broad
frequency range in a single amplifier design.
Freq Range
(Max) (MHz)
Switches
Matched Power Transistor (MPT)
RFMD’s MPT products are high power discrete GaN amplifiers
designed for radar, air traffic control and surveillance, and
general purpose broadband amplifier applications. These
matched GaN power transistors are packaged in a hermetic,
flanged ceramic package.
Freq Range
(Min) (MHz)
FEATURES
• Broadband operation
• Advanced GaN HEMT technology
• 28V typical performance
• Low insertion loss, high isolation
• 50Ω input/output
SPECIFICATIONS
Freq Range
(GHz)
Gain
(dB)
Output Power
at P3dB
(dBm)
Drain Eff at
P3dB
(%)
Package
Part
Number
DC to 10
21.4
36.3
60
Die-on-Carrier
RFHA1101
Power IC
Broadband Power Transistor (BPT)
FEATURES
• Advanced GaN HEMT technology
• Advanced heat-sink technology
• Input internally matched to 50Ω
• High power added efficiency
• -40oC to 85oC operating temperature
• Wide instantaneous bandwidth
• Large signal models available
• EAR99 export control
RFMD’s Power ICs are wideband power amplifiers designed
for CW and pulsed applications such as wireless infrastructure,
radar, two-way radios, and general purpose TX amplification.
These input matched GaN transistors are packaged in an air
cavity ceramic package, which provides excellent thermal
stability through the use of advanced heat-sink and power
dissipation technologies.
RFMD’s high-power GaN broadband power transistors are
optimized for commercial infrastructure, military communication,
and general purpose amplifier applications in the 700MHz to
2.2GHz frequency band, ideal for constant envelope,
pulsed, WCDMA, and LTE applications. They are input matched
GaN transistors packaged in an air cavity ceramic package,
which provides excellent thermal stability.
FEATURES
• Advanced GaN HEMT technology
• High peak modulated power
• Advanced heat-sink technology
• -25oC to 85oC operating temperature
• Optimized for video bandwidth and
minimized memory effects
• RF-tested for 3GPP performance
• RF-tested for peak power using IS95
SPECIFICATIONS
SPECIFICATIONS
Freq Range
(Min) (MHz)
Freq Range
(Max) (MHz)
Gain
(dB)
OP3dB
(dBm)
Power Added
Efficiency
(%)
30
50
30
225
2500
1000
512
1215
11.0
16.0
18.5
16.6
39.0
41.3
39.5
39.4
40
60
70
62.5
VD
(V)
ID
(mA)
Package
Part
Number
28
28
28
28
55
88
55
88
AIN SOIC-8
AIN SOIC-8
AIN SOIC-8
AIN SOIC-8
RF3826
RFHA1000
RFHA1003
RFHA1006
FEATURES
• Wideband frequency operation
• Advanced GaN HEMT technology
• High peak efficiency and peak power
• Optimized evaluation board layout for 50Ω operation
• Integrated matching components for high terminal impedances
SPECIFICATIONS
Freq Range
(Min) (MHz)
Freq Range
(Max) (MHz)
Gain
(dB)
PSAT
(dBm)
Drain Efficiency
(%)
VD
(V)
ID
(mA)
Package
Part
Number
2800
1200
1200
960
3400
1400
1400
1200
12.0
15.0
15.0
17.0
54.5
54.5
53.5
54.5
52
55
58
55
50
50
36
50
440
440
440
440
RF565-2
RF565-2
RF565-2
RF565-2
RF3928
RFHA1020
RFHA1023
RFHA1025
Unmatched Power Transistor (UPT)
OP1dB
(dBm)
ACP at 7.5dB PAR
(dBc)
Drain Efficiency
(%)
VD
(V)
ID
(mA)
Package
Part
Number
1800
1800
700
700
2200
2200
1000
1000
15.0
15.5
20.0
20.0
180
90
180
90
-36
-36
-32
-34
36.6
35.0
39.0
38.0
48
48
48
48
600
300
600
300
RF400-2
RF400-2
RF400-2
RF400-2
RFG1M20180
RFG1M20090
RFG1M09180
RFG1M09090
RFMD’s GaN-on-SiC high power discrete RF switches are
designed for military and commercial wireless infrastructure,
industrial/scientific/medical, and general purpose broadband RF
control and switching applications. The RFSW2100 is an SPDT
RF switch suitable for many applications with 45W CW input
0.1dB power compression.
FEATURES
• Advanced GaN HEMT technology
• 40V control
• Low insertion loss, high isolation
• 50Ω input/output
SPECIFICATIONS
Freq Range
(GHz)
PO.1dB
(W)
Insertion Loss
at 2GHz
(dB)
Isolation
at 2GHz
(dB)
Switching
Speed
(nS)
Control
Voltage
(V)
IQ
(uA)
Package
Part
Number
DC to 6
45
0.3
-37
40.0
-40
200
QFN
RFSW2100
The RFHA1101 is a 28V, 4.3W, GaN-on-SiC high power discrete
amplifier die-on-carrier designed for commercial wireless
infrastructure, cellular and WiMAX infrastructure, industrial/
scientific/medical, and general purpose broadband amplifier
applications. Using an advanced high power density GaN
semiconductor process, the RFHA1101 is able to achieve high
efficiency and flat gain over a broad frequency range in a
single amplifier design.
Freq Range
(GHz)
P3dB at
900MHz
(W)
Linear Gain
at 900MHz
(dB)
Drain Eff.
at 900MHz
(%)
P3dB at
2.1GHz
(W)
Linear Gain
at 2.1GHz
(dB)
Drain Eff.
at 2.1GHz
(%)
VD
(V)
IDQ
(mA)
Package
Part
Number
DC to 3.5
DC to 3.5
DC to 3
DC to 3.5
50
76
90
145
20
21
21
21
65
68
75
75
45
74
90
140
15
14
14
13
65
65
60
60
48
48
48
48
130
220
300
440
Ceramic 360 Bolt Down
Ceramic 360 Bolt Down
Ceramic 360 Bolt Down
Ceramic 360 Bolt Down
RF3931
RF3932
RF3933
RF3934
Note: also available in die form.
Gain
(dB)
GaN-on-SiC Power Amplifiers
FEATURES
• Broadband operation
• Advanced GaN HEMT technology
• Advanced heat-sink technology
• EAR99 Export Control
RFMD’s UPT products are high power GaN unmatched power
transistors designed for CW and pulsed applications. Using an
advanced 0.5μm GaN high electron mobility transistor (HEMT)
semiconductor process, these high-performance amplifiers
show excellent peak drain efficiency and flat gain over a broad
frequency range in a single amplifier design.
Freq Range
(Max) (MHz)
Switches
Matched Power Transistor (MPT)
RFMD’s MPT products are high power discrete GaN amplifiers
designed for radar, air traffic control and surveillance, and
general purpose broadband amplifier applications. These
matched GaN power transistors are packaged in a hermetic,
flanged ceramic package.
Freq Range
(Min) (MHz)
FEATURES
• Broadband operation
• Advanced GaN HEMT technology
• 28V typical performance
• Low insertion loss, high isolation
• 50Ω input/output
SPECIFICATIONS
Freq Range
(GHz)
Gain
(dB)
Output Power
at P3dB
(dBm)
Drain Eff at
P3dB
(%)
Package
Part
Number
DC to 10
21.4
36.3
60
Die-on-Carrier
RFHA1101
RFMD .
Open Foundry Services
®
Our open foundry exists to provide all customers with access
to our premium III-V technology portfolio and leverage our
commercial scale, experience, and resources to offer costeffective turn-key solutions. Our dedicated and focused
support teams, custom services and advanced engineering,
combined with our technology, make RFMD a preferred
foundry partner.
High Power GaN
RFMD GaN: Multiple Benefits
RFMD® GaN is production ready. It’s a mature, robust
RFMD GaN Technologies
technology with extraordinary reliability. Compared to GaAs
• 0.5μm gate length HEMT transistor AlGaN/GaN on SiC
• MTTF > 1 x 107 hours at TCHANNEL = 200°C
• 100Ω/o thin film resistor and high-resistance epi resistor
• 135pf/mm2 MIM capacitor with 340V breakdown
• Through wafer vias
and Si, RFMD GaN has much higher breakdown voltage
and power densities, enabling applications not possible
with competing process technologies. RFMD’s GaN high
power density also allows for smaller devices, reducing the
GaN Process Technology Offerings
GaN1 - High Power
• Power density – up to 8W/mm
• High breakdown voltage >400V
• Enables 65V operation
GaN2 - High Linearity
• Enhanced linearity versus GaN1
• 22dB better IM3
- Power density – up to 4W/mm
- High breakdown voltage >300V
• Enables 48V operation
GaN3 - High Power & High Linearity
• Optimized power process for high
linearity applications
• 36V 65V operation
• Improved linearity over GaN1
• Power Density up to 5.5W/mm
• High peak efficiency
capacitance enabling high impedances, wider bandwidths,
RFMD GaN: Manufacturing Process
and reduced cost. Additional benefits include reduced circuit
RFMD has defined a GaN production model that best
complexity, industry-leading efficiency of operation, reduced
leverages the cost advantages attained by manufacturing
cooling requirements, and lighter weight.
in our existing wafer factory—the world’s largest III-V
commercial wafer factory—located near RFMD’s corporate
headquarters in Greensboro, North Carolina. Commercializing
semiconductor processes is an RFMD strength forged with
the successful release of the industry’s first GaAs HBT
power amplifier for the high-volume cellular handset market.
Now offering Package Assembly and Test Services from
RFMD Open Foundry Services
From die probe/pick through assembly and test, RFMD offers turn-key packaging
services for both high volume commercial and military application. RFMD has
extensive experience in analyzing customer requirements and our dedicated staff
provides the highest quality of workmanship, regardless of complexity.
rGaN-HV™ - High Voltage
• 1.0μm gate-length pHEMT transistor
AlGaN/GaN on SiC
• High peak current density
• Ultra-fast switching time
• Ultra-high breakdown voltage >1000V
• Enables 600V operation
• RFMD’s best-in-class cycle time
• Prototype and shuttle lot cycle time = 6 weeks*
• Production lot cycle time = 6 weeks*
*Time from receipt of DRC clean layout file to delivery of standard
processed wafers/die.
MPG.High Power GaN.0513.100
(GaN) transistors for the wireless infrastructure, commercial,
and military markets.
FEATURES
•Milcom
• Electronic warfare
• Industrial, scientific, medical
• Cellular BTS
• Digital video broadcast
• CATV line amplifiers
• Military and civilian radar
• Public mobile radio
Industry-Leading Cycle Time from RFMD
*Estimate based on published GaAs cycle times/GaN assumed to be equal to GaAs cycle times
For more information on RFMD Open Foundry Services, contact: RFMDFoundryServices@rfmd.com
or visit www.rfmd.com/foundry
RFMD® is a trademark of RFMD, LLC. All other trade names, trademarks
and registered trademarks are the property of their respective owners. ©2013 RFMD.
Applying that knowledge to the development of gallium nitride