IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
Semiconductor
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
November 1997
Features
Description
• 25A and 28A, 80V and 100V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
• rDS(ON) = 0.077Ω and 0.100Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
Formerly developmental type TA17421.
Symbol
BRAND
D
IRF540
TO-220AB
IRF540
IRF541
TO-220AB
IRF541
IRF542
TO-220AB
IRF542
IRF543
TO-220AB
IRF543
RF1S540
TO-262AA
RF1S540
RF1S540SM
TO-263AB
RF1S540SM
G
S
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
5-1
File Number
2309.3
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
TC = 25oC, Unless Otherwise Specified
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
IRF540, RF1S540,
RF1S540SM
100
100
28
20
110
±20
150
1
230
-55 to 175
IRF541
80
80
28
20
110
±20
150
1
230
-55 to 175
IRF542
100
100
25
17
100
±20
150
1
230
-55 to 175
IRF543
80
80
25
17
100
±20
150
1
230
-55 to 175
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
300
260
300
260
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
MIN
TYP
MAX
UNITS
IRF540, IRF542,
RF1S540, RF1S540SM
100
-
-
V
IRF541, IRF543
80
-
-
V
VGS = VDS, ID = 250µA
2
-
4
V
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 150oC
-
-
250
µA
28
-
-
A
25
-
-
A
-
-
±100
nA
IRF540, IRF541,
RF1S540, RF1S540SM
-
0.060
0.077
Ω
IRF542, IRF543
-
0.080
0.100
Ω
8.7
13
-
S
-
15
23
ns
-
70
110
ns
-
40
60
ns
-
50
75
ns
-
38
59
nC
-
8
-
nC
-
21
-
nC
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
SYMBOL
BVDSS
VGS(TH)
IDSS
ID(ON)
IRF540, IRF541,
RF1S540, RF1S540SM
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 10)
VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
(Figure 7)
IRF542, IRF543
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VGS = ±20V
ID = 17A, VGS = 10V (Figures 8, 9)
VDS ≥ 50V, ID = 17A (Figure 12)
VDD = 50V, ID ≈ 28A, RG ≈ 9.1Ω, RL = 1.7Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
tf
Qg(TOT)
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
VGS = 10V, ID = 28A, VDS = 0.8 x Rated
BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Operating Temperature
5-2
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Internal Drain Inductance
LD
TEST CONDITIONS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
Measured From the
Contact Screw on Tab
To Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) from Package to
Center of Die
Internal Source Inductance
LS
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
MIN
TYP
MAX
UNITS
-
1450
-
pF
-
550
-
pF
-
100
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
1
oC/W
LD
G
LS
S
Thermal Resistance Junction to Case
RθJC
Thermal Resistance
Junction to Ambient
RθJA
Free Air Operation
-
-
80
oC/W
RθJA
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
-
-
62
oC/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET Symbol Showing the Integral
Reverse
P-N Junction Diode
MIN
TYP
MAX
UNITS
-
-
28
A
-
-
110
A
-
-
2.5
V
D
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13)
trr
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
70
150
300
ns
QRR
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
0.44
1.0
1.9
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 25Ω, peak IAS = 28A. (Figures 15, 16).
5-3
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Unless Otherwise Specified
1.2
30
1.0
24
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
Typical Performance Curves
0.8
0.6
0.4
IRF540, IRF541
RF1S540, RF1S540SM
18
IRF542, IRF543
12
6
0.2
0
0
25
0
125
50
75
100
TC , CASE TEMPERATURE (oC)
25
175
150
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
ZθJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)
10
1
0.5
PDM
0.2
0.1
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.05
0.02
0.01
0.01
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC = 25oC
IRF540, 1, RF1S540, SM
100
50
ID, DRAIN CURRENT (A)
IRF542, 3
100µs
IRF540, 1, RF1S540, SM
IRF542, 3
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
TJ = MAX RATED
SINGLE PULSE
1 1
10ms
IRF541, 3
DC
IRF540, 2
RF1S540, SM
ID, DRAIN CURRENT (A)
80µs PULSE TEST
10µs
VGS = 10V
VGS = 8V
40
30
VGS = 7V
VGS = 6V
20
VGS = 5V
10
VGS = 4V
0
0
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
12
24
36
48
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
5-4
60
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves
100
80µs PULSE TEST
ID(ON), ON-STATE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
50
Unless Otherwise Specified (Continued)
VGS = 8V
40
VGS = 7V
VGS = 10V
30
VGS = 6V
20
VGS = 5V
10
VGS = 4V
0
0
2.0
1.0
3.0
4.0
5.0
10
175oC
0.1
2
0
FIGURE 6. SATURATION CHARACTERISTICS
10
3.0
80µs PULSE DURATION
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
ON RESISTANCE (Ω)
rDS(ON), DRAIN TO SOURCE
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
0.8
0.6
0.4
VGS = 10V
0.2
VGS = 10V, ID = 28A
2.4
1.8
1.2
0.6
VGS = 20V
0
0
25
75
50
100
0.0
-60 -40 -20
125
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
0
20
40
60
80 100 120 140 160 180
TJ , JUNCTION TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
3000
ID = 250µA
1.15
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2400
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
25oC
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
VDS ≥ 50V
80µs PULSE TEST
DUTY CYCLE = 0.5% MAX
1.05
0.95
0.85
1800
CISS
1200
COSS
600
CRSS
0.75
-60 -40 -20
0
20
40
60
0
80 100 120 140 160 180
1
TJ , JUNCTION TEMPERATURE (oC)
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves
1000
VDS ≥ 50V, 80µs PULSE TEST
ISD, SOURCE TO DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
20
Unless Otherwise Specified (Continued)
16
25oC
12
175oC
8
4
0
0
10
20
30
175oC
25oC
10
1
50
40
100
0.6
1.2
1.8
2.4
VSD, SOURCE TO DRAIN VOLTAGE (V)
0
ID , DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
VGS, GATE TO SOURCE VOLTAGE (V)
20
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = 28A
VDS = 50V
16
VDS = 20V
12
VDS = 80V
8
4
0
0
12
24
36
48
60
Qg , TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6
3.0
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Test Circuits and Waveforms
VDS
BVDSS
tP
L
VARY tP TO OBTAIN
IAS
+
RG
REQUIRED PEAK IAS
VDS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
tON
tOFF
td(ON)
td(OFF)
tf
tr
VDS
RL
90%
90%
+
RG
-
VDD
10%
0
10%
90%
DUT
VGS
VGS
0
12V
BATTERY
0.2µF
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
(ISOLATED
SUPPLY)
VDD
Qg(TOT)
SAME TYPE
AS DUT
50kΩ
Qgd
D
VDS
DUT
G
Ig(REF)
0
S
IG CURRENT
SAMPLING
RESISTOR
VGS
Qgs
0.3µF
0
50%
PULSE WIDTH
10%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
50%
IG(REF)
VDS
ID CURRENT
SAMPLING
RESISTOR
0
FIGURE 20. GATE CHARGE WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
5-7