APT100MC120JCU2
VDSS = 1200V
RDSon = 17mΩ max @ Tj = 25°C
ID = 143A @ Tc = 25°C
ISOTOP® Boost chopper
SiC MOSFET + SiC chopper diode
Power module
K
D
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch
Features
•
G
•
S
K
S
G
-
D
ISOTOP®
•
•
•
SiC Power MOSFET
Low RDS(on)
High temperature performance
SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
Max ratings
1200
143
108
280
-10/+25
17
600
Unit
V
June, 2013
ID
Parameter
Drain - Source Breakdown Voltage
A
V
mΩ
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APT100MC120JCU2 – Rev 2
Symbol
VDSS
APT100MC120JCU2
Electrical Characteristics
Symbol Characteristic
IDSS
Zero Gate Voltage Drain Current
RDS(on)
Drain – Source on Resistance
VGS(th)
IGSS
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V , VDS = 1200V
Tj = 25°C
VGS = 20V
ID = 100A
Tj = 150°C
VGS = VDS, ID = 2mA
VGS = 20 V, VDS = 0V
Min
1.9
Typ
20
12.5
22
2.3
Max
200
17
32
1
Unit
µA
mΩ
V
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 1000V
f = 1MHz
Min
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
RthJC
Junction to Case Thermal Resistance
Inductive Switching
VGS = -5/+20V
VBus = 600V
ID = 100A
RG = 10Ω
Unit
pF
64
nC
126
21
VGS = -2/+20V
VBus = 800V
ID = 100A
RL = 8Ω ; RG = 10Ω
Turn-off Delay Time
Max
360
VGS = -2/+20V
VBus = 800V
ID =100A
Rise Time
Typ
5960
440
46
19
ns
50
30
Tj = 150°C
2.2
Tj = 150°C
1.2
mJ
0.21
°C/W
Typ
Max
Unit
V
70
130
40
1.5
2.2
400
800
SiC chopper diode ratings and characteristics
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
VF
Diode Forward Voltage
IF = 40A
QC
Total Capacitive Charge
IF = 40A, VR = 1200V
di/dt =1000A/µs
260
C
Total Capacitance
f = 1MHz, VR = 200V
186
f = 1MHz, VR = 400V
134
RthJC
Junction to Case Thermal Resistance
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µA
A
1.8
3
V
nC
June, 2013
IRM
Test Conditions
pF
0.7
°C/W
2-6
APT100MC120JCU2 – Rev 2
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT100MC120JCU2
Thermal and package characteristics
Symbol
RthJA
VISOL
TSTG
TJ
TJOP
Torque
Wt
Characteristic
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
SiC MOSFET
Operating junction temperature range
SiC Diode
Min
Typ
2500
-40
-40
-40
Recommended junction temperature under switching conditions
Max
20
150
150
175
TJmax
-25
1.1
-40
Terminals and mounting screws
Package Weight
29.2
Unit
°C/W
V
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Drain
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical Mosfet Performance Curve
Gate Charge vs Gate to Source Voltage
20
Coss
100
Crss
10
0
200
400
600
800
1000
VDS, Drain to Source Voltage (V)
12
8
4
0
0
60
120
180
240
300
360
Gate Charge (nC)
June, 2013
1000
VGS = 20V
I D = 100A
VDS = 800V
16
Operating Frequency vs Drain Current
700
VBUS=600V
D=50%
R G =10Ω
TJ=1 50 °C
TC =75°C
600
Frequency (kHz)
ZVS
500
400
ZCS
300
200
100
Hard
switching
0
20
40
60
80
100 120 140 160
ID, Drain Current (A)
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3-6
APT100MC120JCU2 – Rev 2
C, Capacitance (pF)
Ciss
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
10000
APT100MC120JCU2
Output Characteristics
Output Characteristics
200
200
TJ=1 50 °C
ID, Drain Current (A)
ID, Drain Current (A)
TJ=2 5 °C
160
20
120
VGS=15V
80
40
160
20
120
80
40
0
0
1
2
3
4
VGS =15V
0
5
0
2
3
4
VGS=20V
1.25
1
80
TJ=150°C
60
40
0.75
75
100
125
7
100
TJ=25°C
20
50
6
120
1.5
25
5
Transfert Characteristics
Normalized RDS(on) vs. Temperature
1.75
0
150
0
TJ, Junction Temperature (°C)
2
4
6
8
10
VGS , Gate to Source Voltage (V)
Switching energy vs Rg
switching energy vs current
4
5
Eon
2
Eoff
1
VGS=-5/20V
I D= 100A
VBUS = 600V
TJ = 150 °C
15
20
25
3
Eon
2
Eoff
1
0
10
VGS=-5/20V
R G =10Ω
VBUS= 600V
TJ = 150 °C
4
Losses (mJ)
3
Losses (mJ)
1
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V)
0
30
0
40
Gate resistance (ohm)
80
120
160
200
Current (A)
0.15
0.1
D = 0.9
June, 2013
0.2
0.7
0.5
0.3
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APT100MC120JCU2 – Rev 2
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
APT100MC120JCU2
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
Thermal Impedance (°C/W)
0.7
D = 0.9
0.6
0.7
0.5
0.5
0.4
0.3
0.3
0.2
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
200
TJ=25°C
70
IR Reverse Current (µA)
IF Forward Current (A)
80
60
TJ=75°C
50
40
30
TJ=125°C
20
TJ=175°C
10
150
TJ=175°C
100
TJ=75°C
TJ=125°C
50
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
0
600
800
1000
1200
1400
1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
900
600
June, 2013
300
0
1
10
100
1000
VR Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
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5-6
APT100MC120JCU2 – Rev 2
C, Capacitance (pF)
1200
APT100MC120JCU2
DISCLAIMER
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6-6
APT100MC120JCU2 – Rev 2
June, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.