xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
Features
Low On-Resistance RDS(on)max of 0.080W
Voltage controlled
Maximum operating temperature of 175°C
Extremely fast switching not dependent on
temperature
Low gate charge
Low intrinsic capacitance
Source
Pad
Typical Applications
Gate
Pad
Over Current Protection Circuits
DC-AC Inverters
Switch Mode Power Supplies
Power Factor Correction Modules
Motor Drives
Induction Heating
Part Number
UJN1208Z
Package
Die
Descriptions
United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors. This series
exhibits ultra-low on resistance (RDS(ON)) and gate charge (Qg) allowing for low conduction and switching loss.
The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits
without the need for active control, as well as for cascode operation.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Test Conditions
DC
AC
(1)
Value
Units
1200
V
-20 to +3
-20 to +20
V
Continuous Drain Current (2)
ID
TC = 25°C, VGS = 0V
21
A
Continuous Drain Current (2)
ID
TC = 125°C, VGS = 0V
13
A
Pulsed Drain Current (2)
IDM
Tj = 125°C, VGS = 0V
41
Tj = 175°C, VGS = 0V
35
Operating and Storage Temperature
Temperature for Soldering
TJ, TSTG
-55 to 175
°C
TL
250
°C
(1)
+20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W.
(2)
Assumes a maximum junction-to-case thermal resistance of 1.1°C/W
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xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-Source Breakdown Voltage
Total Drain Leakage Current
Total Gate Leakage Current
Drain-Source On-Resistance
Gate Threshold Voltage
Gate Resistance
Symbol
Test Conditions
BVDS
VGS=-20V, ID=1mA
Max
40
VDS = 1200V,
VGS = -20V, TJ = 175°C
120
750
VGS=-20V, Tj=25°C
0.3
125
3
VG(th)
VGS=-20V, Tj=175°C
VGS=2V, IF=20A,
TJ = 25°C
VGS=0V, IF=15A,
TJ = 25°C
VGS=2V, IF=20A,
TJ = 175°C
VGS=0V, IF=15A,
TJ = 175°C
VDS = 5V, ID = 70mA
RG
VGS = 0V, f = 1MHz
ID
IG
RDS(on)
Units
V
VDS = 1200V,
VGS = -20V, TJ = 25°C
Rev 1.0
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Min
1200
Value
Typ
250
mA
67
80
77
95
mA
mW
-10
200
240
230
285
-7
-4
6
V
W
2
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xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
Typical Performance - Dynamic (Refer to the datasheet of the packaged device UJN1208K)
Parameter
symbol
Test Conditions
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 100V,
VGS = -20V,
f = 100kHz
Effective Output Capacitance, Energy
Related
Coss(er)
Total Gate Charge
QG
Gate-Drain Charge
QGD
Gate-Source Charge
QGS
Turn-on Delay Time
td(on)
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tf
Turn-on Energy
EON
Turn-off Energy
EOFF
VDS = 0V to 600V,
VGS = -20V
VDS=600V, ID = 20A,
VGS=-15V to 2.5V
Min
Value
Typ
500
94
53
44
VDS=600V, ID=20A,
Gate Driver =-15V to
+5V,
RG,EXT = 2.5W,
Inductive Load,
TJ = 25°C
30
23
202
210
11
tf
Turn-on Energy
EON
Turn-off Energy
EOFF
Total Switching Energy
VDS=600V, ID=20A,
Gate Driver =-15V to
+5V,
RG,EXT = 2.5W,
Inductive Load,
TJ = 150°C
ETOTAL
33
22
mJ
ns
23
220
174
mJ
394
Rev 1.0
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ns
26
td(on)
Fall Time
nC
11
Turn-on Delay Time
td(off)
pF
6
412
Turn-off Delay Time
pF
62
ETOTAL
tr
Units
93
Total Switching Energy
Rise Time
Max
3
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xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
Typical Performance Diagrams
80
50
Vgs = 2V
Vgs = 0V
Vgs= - 1V
Vgs = -2V
Vgs = -3V
Vgs = -4V
40
60
Drain Current, ID (A)
Drain Current, ID (A)
70
50
40
Vgs = 2V
Vgs = 0V
Vgs= - 1V
Vgs = -2V
Vgs = -3V
Vgs = -4V
30
20
10
0
20
10
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, VDS (V)
10
0
Figure 1 Typical output characteristics
at Tj = 25°C
50
20
10
0
0
5
10
Drain-Source Voltage, VDS (V)
15
3
4
5
6
7
8
9
Drain-Source Voltage, VDS (V)
10
1.E-04
1.E-05
1.E-06
- 55°C
1.E-07
25°C
125°C
1.E-08
175°C
1.E-09
200
Figure 3 Typical output characteristics
at Tj = 175°C
400
600
800
1000
Drain-Source Voltage, VDS (V)
1200
Figure 4 Typical drain-source leakage
at VGS = -20V
Rev 1.0
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Figure 2 Typical output characteristics
at Tj = 125°C
Drain Leakage Current, ID (A)
30
1
1.E-03
Vgs = 2V
Vgs = 0V
Vgs= - 1V
Vgs = -2V
Vgs = -3V
Vgs = -4V
40
Drain Current, ID (A)
30
4
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xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
50
Tj = 25°C
Ciss
100
Coss
Crss
10
Tj = 175°C
30
20
10
0
0
200
400
600
800 1000
Drain-Source Voltage, VDS (V)
1200
-8
Figure 5 Typical capacitances at 100kHz
and VGS = -20V
2.5
400
0.0
350
-2.5
-5.0
-7.5
-10.0
-12.5
-7
-6
-5
-4
-3
-2
-1
Gate-Source Voltage, VGS (V)
0
Figure 6 Typical transfer characteristics
at VDS = 5V
On-Resistance, RDS(on) (mW)
Gate-Source Voltage, VGS (V)
Tj = 125°C
40
Drain Current, ID (A)
Capacitance, C (pF)
1000
-15.0
Tj = 25°C
Tj = 125°C
Tj = 175°C
300
250
200
150
100
50
0
0
10
20
30
40
50
Gate Charge, QG (nC)
60
70
0
Figure 7 Typical gate charge
at VDS = 600V and ID = 20A
50
60
70
Figure 8 Typical drain-source
on-resistance at VGS = 0V
Rev 1.0
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10
20
30
40
Drain Current, ID (A)
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xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
30
25
-2
EOSS (mJ)
Threshold Voltage, VG(th) (V)
0
-4
-6
20
15
10
-8
5
-10
0
25
50
75
100
125
150
Junction Temperature, Tj (°C)
175
0
200
400
600
800 1000
Drain-Source Voltage, VDS (V)
Figure 10 Typical stored energy in COSS
Figure 9 Threshold voltage vs. Tj
at VDS = 5V and ID = 70mA
at VGS = -20V
1.E-04
1.E+00
Tj = 25°C
Tj = 25°C
1.E-05
1.E-01
Tj = 125°C
Gate Current, IG (A)
Gate Current, IG (A)
1200
Tj = 175°C
1.E-06
1.E-07
1.E-08
1.E-09
Tj = 125°C
Tj = 175°C
1.E-02
1.E-03
1.E-04
1.E-05
-30
-25
-20
-15
-10
-5
Gate-Source Voltage, VGS (V)
0
0
Figure 11 Typical gate leakage current
at VDS = 0V
4
Figure 12 Typical gate forward current
at VDS = 0V
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Gate-Source Voltage, VGS (V)
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xJ SiC Series...
80mW - 1200V SiC Normally-On JFET...
UJN1208Z Die Form...
Mechanical Characteristics
Parameter
Die Dimensions (L x W)
Source Pad Metal Dimensions (L x W)
Gate Pad Metal Dimensions (L x W)
Source Metallization (Al)
Gate Metallization (Al)
Backside Drain Metallization (Ti/Ni/Au)
Die Thickness
Typical Value
2.11 x 2.36
1.72 x 1.50
0.7 x 0.35
5
5
0.07/0.1/0.1
150
Units
mm
mm
mm
mm
mm
mm
mm
Chip Dimensions
2.11
0.7
Unit: mm
Gate Pad
Opening
0.15
0.17 0.35
Source Pad
Opening
1.50
2.36
1.72
Disclaimer
United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and
technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any
errors or inaccuracies within.
Information on all products and contained herein is intended for description only. No license, express or implied, to any
intellectual property rights is granted within this document.
United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon
Carbide, Inc. products and services described herein.
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