RFL-RFT
RF Circuit Trainer System
RFL-RFT RF Circuit Training System consist of 3 individual board
to introduce the concept of Transmission Line Circuits , RF
Microwave Network Analysis , Impedance Transformation ,
Impedance Matching along with Active RF devices like PHEMT,
low noise FET. etc.
The trainer kit boosts the learning curve & visualization towards
critical impedance theory along with application circuit.
This system provides insight on RFTransmission line concepts
through Smith chart based exercise.
This system covers variety of RF measurement like insertion loss,
gain, real & imaginary impedances, frequency response over
wideband etc.
This system is compatible with various measuring equipment
like Spectrum Analyzer, Network Analyzer, RF Generator &
Detector supplied as option with this kit Individual
characterizations of device will help to understand S,Y & Z
parameter.
The PCB is gold plated to provide better reliability & electrical
performance.
• Load condition
Slot line
• Frequency
• Power
• Load condition
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SPECIFICATIONS
BOARD 1 : TRANSMISSION CHANNEL & MICROSTRIP
DISCONTINUITIES
Open air transmission
: 0.9GHz to 3GHz
• Frequency
: 0dBm to -20dBm
• Power
: Matched Antenna
• Load
Co-axial cable transmission
: 0.1GHz to 3GHz
• Frequency
: 0dBm to -20dBm
• Power
: Open short, resistive load,
• Load
complex load
Microstrip transmission line
: 0.9GHz to 3GHz
• Frequency
: 0dBm to 20dBm
• Power
: Open short, Resistive load,
• Load condition
Complex load
CPW transmission line
: 0.9GHz to 3GHz
• Frequency
: 0dBm to -20dBm
• Power
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: Open short, Resistive load,
Complex load
: 0.9GHz to 3GHz
: 0dBm to -20dBm
: Open short, Resistive load,
Complex load
CPW transmission line with ground
Frequency
: 0.9GHz to 3GHz
Power
: 0dBm to -20dBm
Load condition
: Open short, Resistive load,
Complex load
Coupled line micros trip transmission line
Frequency
: 0.9GHz to 3GHz
Power
: 0dBm to -20dBm
Load condition
: Balanced resistive load,
Unbalance load
Open discontinuity
Frequency
: 0.9GHz to 3 GHz
Power
: 0dBm to -20dBm
Short discontinuity
Frequency
: 0.9GHz to 1.3GHz
Power
: 0dBm to -20dB
Load condition
: Series & shunt capacitive load
GAP discontinuity
Frequency
: 0.9GHz to 1.3GHz
Power
: 0dBm to -20dB
Load condition
: Series & shunt inductive load
Bend discontinuity
Frequency
: 0.9GHz to 1.3GHz
Power
: 0dBm to -20dB
Load condition
: Complax load
Step discontinuity
Frequency
: 0.9GHz to 1.3GHz
Power
: 0dBm to -20dB
Load condition
: Series & shunt Resistive load
Tee discontinuity
Frequency
: 0.9GHz to 1.3GHz
Load condition
: Matched, Restive load
BOARD-2 : RF CIRCUIT S &MATCHING ARCHITECTURE
RF Lump Element
• Frequency
: 0.3GHz to 1GHz
• Type
: Capacitive, Inductive
• Load condition
: Matched
High frequency effect on Lump Element
• Frequency
: 0.001GHz to 3 GHz
• Power
: 0dBm to -20dB
Inductive Resonance Circuit
• Frequency
: 0.3GHz to 1GHz
• Power
: 0dBm to -20dB
• Load condition
: Matched, Resistive
Capacitive Resonance Circuit
• Frequency
: 0.3GHz to 1GHz
• Power
: 0dBm to -20dB
• Load condition
: Matched, Resistive
RLC Resonance Circuit
• Frequency
: 0.3GHz to 1GHz
• Power
: 0dBm to -20dB
• Load condition
: Matched, Resistive
Tunable Resonance Circuit
• Frequency
: 0.3GHz to 1GHz
• Power
: 0dBm to -20dB
• Load condition
: Variable load
BALUN
• Frequency
: 0.3GHz to 3 GHz
• Power
: 0dBm to -20dB
• Load condition
: Variable load
DC Bias TEE
• Frequency
: 0.3GHz to 1.3 GHz
• Power
: 0dBm
• Isolation
: 25dB
Microstrip Bias TEE
• Frequency
: 0.7GHz to 1.3 GHz
• Power
: 0dBm to -20dB
• Load condition
: Matched load
Single stub matching
• Frequency
: 0.8GHz to 1.1 GHz
• Load condition
: Variable load
Quarter wave transformer
• Frequency
: 0.8GHz to 1.1 GHz
• Load condition
: Variable load
Binomial Quarter transformer
• Frequency
: 0.8GHz to 1.1 GHz
• Load condition
: Variable load
L Matching for resistive load
• Frequency
: 0.85 GHz to 1.1GHz
• Load condition
: Resistive load
L Matching for complex load
• Frequency
: 0.85 GHz to 1.1 GHz
• Load condition
: Complex load
T Matching
• Frequency
: 0.85 GHz to 1.1 GHz
• Load condition
: High load impedance (fixed)
PI Matching
• Frequency
: 0.85 GHz to 1.1 GHz
• Load condition
: low load impedance (fixed)
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BOARD-3 : RF ACTIVE COMPONENT & ITS APPLICATION
CIRCUITS
Pin diode
Frequency
: 0.5 GHz to 1.3 GHz
Load condition- fixed
: 50ohm
Insertion loss
: 0.5db-ON condition
20dB-OFF condition
Shottkey Diode
Frequency
: 0.8 GHz to 3 GHz
Power
: +15dBm to -15dBm
Power conversion
: 2V TO 2mV (DC)
Varactor Diode
Frequency
: 0.8 GHz to 3 GHz
Power
: +15dBm to -15dBm
RF HEMT
Frequency
: 0.8 GHz to 1.3 GHz
Power
: +0dBm to -20dBm
Gain(S21)
: -10dB
Isolation (S12)
: -25dB
RF PHEMT
Frequency
: 0.8 GHz to 1.3 GHz
Power
: +0dBm to -20dBm
Gain (S21)
: -10dB
Isolation (S12)
: -25dB
RF FET
Frequency
: 0.8 GHz to 1.3 GHz
Power
: +0dBm to -20dBm
Gain (S21)
: -10dB
• Isolation (S12)
• Noise figure
: -25dB
: 1.8dB
EXPERIMENTS
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Measurement of Insertion loss (S21) for different devices
Study of Load condition over transmission line channel
Study of Phase characterization of channel
Measurement of Channel S/N ratio & frequency BW
response
Study of Z parameter
Study and calculation of Smith chart over a wide band
Measurement of S11 /VSWR for different devices
Study of Phase Balance / Amplitude Balance
Measurement of Q Factor for different devices
Measurement of Resonance over BW
Study of Match & Unmatch circuits
Measurement of DC Characteristic of different devices
Measurement of AC, DC and Transient Characteristic of
different devices
Measurement of Gain Flatness
Study of HARMONIC and its measurement