APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Revision: January 2015
Applications
 Military SatCom
 Phased-Array Radar Applications
 Terminal Amplifiers
Product Description
X = 3.7mm Y = 3.2mm
The APN167 monolithic GaN HEMT amplifier
Product Features
is a broadband, two-stage power device,
 RF frequency: 43 to 46 GHz
designed for use in Military SatCom and
 Linear Gain: 20 dB typ.
Radar Applications. To ensure rugged and
 Psat: 39 dBm typ.
reliable operation, HEMT devices are fully
passivated. Both bond pad and backside
 PAE @ Psat: 20%
metallization are Ti/Au, which is compatible
 Die Size: < 11.84 sq. mm.
with conventional die attach,
 0.2um GaN HEMT
thermocompression, and thermosonic wire
 4 mil substrate
bonding assembly techniques.
 DC Power: 28 VDC @ 1008 mA
Performance Characteristics (Ta = 25°C)
Specification
Min
Frequency
Linear Gain
Input Return Loss
Output Return Loss
P1dB
Psat
PAE @ Psat
Vd1=Vd1a, Vd2=Vd2a
Vg1=Vg1a
Vg2=Vg2a
Id1+Id1a
Id2+Id2a
43
18
17
17
38.5
Typ
20
22
25
35.5
39
20
28
-4.5
-4.5
336
672
Max
Unit
46
GHz
dB
dB
dB
dBm
dBm
%
V
V
V
mA
mA
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Min
Max
Unit
Vd1=Vg1a, Vd2=Vg2a
Id1+Id1a
Id2+Id1a
Vg1, Vg1a, Vg2, Vg2a
Input drive level
Assy. Temperature
(60 seconds)
20
28
336
672
0
TBD
300
V
mA
mA
V
dBm
deg. C
-5
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Revision: January 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1+Id1a = 336 mA, Id2+Id2a = 672 mA
Linear Gain vs. Frequency
Power, Gain, PAE% vs. Frequency **
45
26
24
40
Pout (dBm), Gain (db), PAE%
22
20
Gain (dB)
18
16
14
12
10
8
6
4
2
0
35
30
25
20
15
10
Gain SS
P1dB
PAE%@Psat
5
0
40
41
42
43
44
45
46
47
48
40
41
42
Frequency (GHz)
43
44
45
46
47
48
47
48
Frequency (GHz)
Output Return Loss vs. Frequency
Input Return Loss vs. Frequency
0
0
-5
-5
Output Return Loss (dB)
Input Return Loss (dB)
Gain@Pin=0dBm
Psat
Max PAE%
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-35
-35
40
41
42
43
44
45
46
Frequency (GHz)
47
48
40
41
42
43
44
45
46
Frequency (GHz)
* Pulsed-Power On-Wafer , ** CW Fixtured
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Revision: January 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 24.0 V, Id1+Id1a = 336 mA, Id2+Id2a = 672 mA *
Linear Gain vs. Frequency
45
22
40
Pout (dBm), Gain (dB), PAE%
24
20
18
16
Gain (dB)
Power, Gain, PAE% vs. Frequency
14
12
10
8
6
4
2
35
30
25
20
15
10
0
0
40
38 39 40 41 42 43 44 45 46 47 48 49 50
0
-5
-5
Output Return Loss (dB)
0
-15
-20
-25
42
43
44
45
46
47
48
Output Return Loss vs. Frequency
Input Return Loss vs. Frequency
-10
41
P1dB(dBm)
PAE%@Psat
Frequency (GHz)
Frequency (GHz)
Input Return Loss (dB)
Gain(dB)@Pin=0dBm
Psat (dBm)
PAE% Max
5
-10
-15
-20
-25
-30
-30
-35
-35
38 39 40 41 42 43 44 45 46 47 48 49 50
38 39 40 41 42 43 44 45 46 47 48 49 50
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Revision: January 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1+Id1a = 336 mA, Id2+Id2a = 672 mA
Power, Gain, PAE% vs. Frequency **
45
45
40
40
Pout (dBm), Gain (db), PAE%
Pout (dBm), Gain (db), PAE%
Power, Gain, PAE% vs. Frequency *
35
30
25
20
15
10
5
Gain @ 10dBm (dB)
P1dB (dBm)
Psat (dBm)
PAE% @ Psat
Max PAE%
Linear Gain (dB)
0
35
30
25
20
15
10
Gain SS
P1dB
PAE%@Psat
5
0
40
41
42
43
44
45
46
47
48
40
41
42
Frequency (GHz)
42.5 GHz
43.5 GHz
44.5 GHz
45.5 GHz
46.5 GHz
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
44
45
46
47
48
Output Power vs. Input Power **
Pout (dBm)
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
43
Frequency (GHz)
Output Power vs. Input Power *
Pout (dBm)
Gain@Pin=0dBm
Psat
Max PAE%
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
41 GHz
42 GHz
43 GHz
44 GHz
45 GHz
46 GHz
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
* Pulse-Power On-Wafer, ** CW Fixtured
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Revision: January 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1+Id1a = 336 mA, Id2+Id2a = 672 mA
Power, Gain, PAE% vs. Frequency *
1200
Power, Gain, PAE% vs. Frequency **
1200
1100
1000
900
Id1_42.5G
Id1_43.5G
Id1_44.5G
Id1_45.5G
Id1_46.5G
Id2_42.5G
Id2_43.5G
Id2_44.5G
Id2_45.5G
Id2_46.5G
Id1_41G
Id1_43G
Id1_45G
Id1_47G
Id2_42G
Id2_44G
Id2_46G
1100
1000
900
800
Id1_42G
Id1_44G
Id1_46G
Id2_41G
Id2_43G
Id2_45G
Id2_47G
Id (mA)
Id (mA)
800
700
700
600
600
500
500
400
400
300
300
200
200
0
2
4
6
8 10 12 14 16 18 20 22 24 26
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
Frequency (GHz)
* Pulse-Power On-Wafer, **CW Fixtured
Thermal Properties
Preliminary Thermal Properties with die mounted with 1mil 80/20 AuSn
Eutectic to 25mil CuW Shim.
Conditions
Vd = 28V, Id1+Id1a = 368 mA *
Id2 + Id2a = 921 mA *
Pin=25.95 dBm
Pout=39.08 dBm
Shim Boundary
Temperature
25 ºC
49.6 ºC
Junction
Temperature
Tjc
162.8 ºC
200.0 ºC **
Thermal
Resistance
θjc
4.9 ºC/W
5.3 ºC/W
* Vd = 28.0 V, Idq1+Id1aq = 336 mA, Id2q+Id2aq = 672 mA
** Max recommended. Pre-qualification reliability testing indicates that MTTF in excess of 105
hours can be achieved by ensuring Tjc is kept below 200ºC.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Revision: January 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1+Id1a = 336 mA, Id2+Id2a = 672 mA *
Freq GHz
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
34.0
0.110
-101.841
0.484
-122.815
0.003
76.615
0.117
1.410
34.5
0.096
-115.160
0.564
-138.227
0.003
27.194
0.097
-23.379
35.0
0.071
-126.967
0.657
-153.903
0.002
19.337
0.080
-45.269
35.5
0.055
-148.663
0.762
-169.695
0.002
65.428
0.057
-63.815
36.0
0.059
17.195
0.887
174.835
0.002
28.841
0.041
-85.852
36.5
0.049
66.150
1.032
158.855
0.003
49.684
0.025
-133.162
37.0
0.044
87.520
1.210
143.065
0.003
21.637
0.020
20.382
37.5
0.046
111.189
1.429
127.274
0.004
34.005
0.015
43.110
38.0
0.054
77.822
1.710
110.887
0.004
38.903
0.013
51.419
38.5
0.060
70.129
2.073
93.604
0.006
14.638
0.019
41.519
39.0
0.059
54.528
2.547
75.429
0.007
16.914
0.045
97.535
39.5
0.057
40.942
3.125
55.173
0.008
-5.825
0.086
143.408
40.0
0.075
36.181
3.831
33.623
0.008
-17.491
0.130
118.876
40.5
0.083
30.121
4.657
10.409
0.009
-45.099
0.178
92.759
41.0
0.087
30.891
5.599
-14.815
0.009
-66.837
0.220
62.945
41.5
0.105
22.066
6.537
-40.073
0.010
-93.443
0.226
35.064
42.0
0.110
4.235
7.690
-67.989
0.010
-112.892
0.212
3.391
42.5
0.115
-7.029
8.540
-97.870
0.011
-138.365
0.157
-26.472
43.0
0.123
-23.958
9.177
-127.764
0.011
-70.641
0.087
-46.456
43.5
0.091
-41.380
9.317
-156.756
0.011
74.750
0.039
-48.488
44.0
0.067
-47.232
9.458
111.449
0.013
136.755
0.045
-4.377
44.5
0.040
-78.825
10.192
150.906
0.011
119.834
0.065
-17.427
45.0
0.020
-6.900
11.289
117.318
0.011
86.296
0.073
-61.977
45.5
0.019
-6.146
10.787
81.440
0.016
52.268
0.054
-117.204
46.0
0.041
53.231
10.014
47.229
0.012
18.448
0.065
-16.450
46.5
0.078
78.114
8.660
11.820
0.013
-4.884
0.107
134.470
47.0
0.107
56.365
6.802
-21.376
0.010
-60.602
0.135
99.370
47.5
0.129
37.462
5.201
-50.756
0.007
-94.563
0.146
74.003
48.0
0.171
15.729
3.870
-76.996
0.008
-78.311
0.154
54.560
48.5
0.175
-1.411
2.886
-100.020
0.006
-35.341
0.146
38.277
49.0
0.182
-12.623
2.168
-120.840
0.008
41.826
0.139
14.877
49.5
0.166
-26.498
1.642
-141.538
0.011
35.637
0.115
2.399
50.0
0.143
-38.350
1.233
-158.589
0.004
67.183
0.084
-2.484
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 6
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
Die Size and Bond Pad Locations (Not to Scale)
Revision: January 2015
2438µm
RFIN
GND
VD2
GND
GND
VG2
GND
VD1
GND
GND
VG1
1838 µm
1438 µm
1038 µm
X = 3700 µm  25 µm
Y = 3200  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 100 x 100  0.5 µm
Chip Thickness = 101  5 µm
3200 µm
GND
VD2B
GND
GND
VG2B
GND
VD1A
GND
VG1A
RFOUT
GND
1190 µm
1038 µm
1438 µm
1838 µm
2438 µm
3700 µm
Biasing/De-Biasing Details:
Bias for 1st stage is from top. The 2nd stages must bias up from both sides.
Listed below are some guidelines for GaN device testing and wire bonding:
a.
b.
c.
d.
Limit positive gate bias (G-S or G-D) to < 1V
Know your devices’ breakdown voltages
Use a power supply with both voltage and current limit.
With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.
i.
Apply negative gate voltage (-5 V) to ensure that all devices are off
ii.
Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achieved
e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i.
Gradually decrease drain bias to 0 V.
ii.
Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
f. Repeat de-bias procedure for each amplifier stage
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 7
Approved for Public Release: Northrop Grumman Case 13-xxxx, 05/xx/13
APN167
43-46 GHz
GaN Power Amplifier
Advance Datasheet
VG2
VD1
Suggested Bonding Arrangement
Revision: January 2015
VD2
[4]
[4]
= 0.1uF, 50V (Shunt) [4]
VG1
= 0.01uF, 50V (Shunt)
RF
Output
VD2
GND
GND
VG2
GND
VD1
VG1
RF
Input
GND
= 100 pF, 50V (Shunt)
GND
RFIN
GND
Substrate
GND
RFOUT
Substrate
VD2A
GND
GND
VG2A
GND
VD1A
GND
VG1A
GND
= 0.1uF, 15V (Shunt)
VG1A
= 0.01uF, 15V (Shunt)
[4]
VD1A
[4]
VG2A
VD2A
= 10 Ohms, 30V (Series)
= 100 pF, 15V (Shunt)
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the
amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be
used, do NOT use the 0.1uF , 50V Capacitors.
Mounting Processes
Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or
AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a
good RF path to ground. Maximum recommended temp during die attach is 320 oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up
tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS.
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in the Export Administration Regulations (EAR). Export out of the U.S. may require a U.S. Bureau of
Industry and Security export license.
Web: http://www.as.northropgrumman.com/mps
©2014 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 8
Approved for Public Release: Northrop Grumman Case 15-0025 01/07/15