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Metal Oxide Technologies Inc.
MetOx Presentation
DOE Wire Workshop Jan 2007
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The Houston Connection
The HTS material we use was discovered at the University of Houston Dr
Paul Chu and his team discovered YBCO, the only truly commercial HTS material, in
1987 at the Texas Center for Superconductivity at the University of Houston (TcSUH),
one of the worlds premier superconducting materials research institutions
SVEC
CAM
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The enabling production technology was developed at the University of
Houston The underlying MOCVD epitaxial production technology was developed in
1995 by Dr Alex Ignatiev and his team at the Space Vacuum Epitaxy Center at the
University of Houston (now Center for Advanced Materials), a NASA Research
Partnership Center, and one of the worlds premier materials science research centers.
The commercial wire production system was developed by MetOx in
Houston Metal Oxide Technologies licensed the YBCO and deposition technology
from the UH System in 1998 and designed and built a MOCVD production system
which is continuously improved.
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MetOx
Houston Facility
Finish - Ship – Receive - Storage
Existing Production Systems
MetOx YBCO Production System
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MetOx Buffer Production System
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MetOx Characterization Lab
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MetOx MOCVD works well on MetOx, IBAD & RABITS
Why Optimize all MetOx all MOCVD Architecture
• Low commercial sales price because of – Low equipment cost
– Low raw material cost
• Thick film capability means – Higher Ic with lower Jc
– Accommodates more manufacturing variability
• Simple architecture – Makes joining possible
– Less production variables
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Current Work at MetOx
All production is continuous air-to-air, reel-to-reel
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MetOx YBCO on LANL IBAD
MetOx YBCO on ORNL RABITS
MetOx YBCO on MetOx buffer
MetOx single buffer
Thick films at MetOx
Thick films at U of H
Chemical pinning to enhance performance
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Best Ic on IBAD – 265 A/cm
Best Jc on IBAD – 1.7MA
MetOx YBCO on LANL IBAD-buffered hastelloy substrates
Measurements performed at LANL by Dr. L. Civale and Dr. B. Maiorov
Field dependence
Ic~94 A/cm 1
100
H//ab
H//c
Metox CON54a
T=75.5K
0.22
Angular dependence
Metox CON54a
T=75.5K µ0H=1T
1
0.01
0
1
2
µ0H [T]
3
4
-2
Jc [MAcm ]
10
0.1
Ic [A/cm]
0.20
-2
Jc [MA cm ]
0.24
0.18
0.16
0.14
0.12
0.10
-45
0
45
Θ [deg]
Produced on MetOx continuous reel to reel, air to air system
90
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Best Ic on RABITS – 143 A/cm
Best Jc on RABITS – 1.5MA
MetOx YBCO on ORNL Ni-3%W RABiTS substrates
Measurements performed at ORNL by Dr. D. F. Lee and Mr. P. Martin
1.6
30
Field dependence
Angular dependence
2
Jc = 1.39 MA/cm
25
Ic (A/cm)
2
Jc (MA/cm )
1.2
0.8
20
0.4
15
0
10
0
0.5
1
H//c (Tesla)
1.5
-20
0
20
40
60
80 100 120
Angle (deg.); H = 1 T
Produced on MetOx continuous reel to reel, air to air system
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MetOx YBCO on MetOx single buffer
SEM crosscross-sectional view
I-V curve
5
Ic = 45.5 A
2
Jc = 490,000 A/cm
4
V (µV)
3
2 THETA scan
o o
∆Ω ∆Ω
= 5-7
= 5-7
o
∆Φ==6.9
7.5o
∆φtrue
2
1
0
-1
0
20
30
40
2θ (deg.)
50
60
10
20
30
I (A/cm-width)
40
50
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MetOx MOCVD single buffer
SEM plain views
XRD phi-scan
∆φtrue = 6.7
1800
1600
1400
1200
1000
800
600
400
200
0
0
90
180
φ (deg.)
SEM cross-sectional view
SEM performed by Dr. T. Holesinger, LANL
SEM performed at MetOx
270
360
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Improving Performance with Thick Films
MetOx thicker YBCO films on ORNL and LANL substrates
SEM crosscross-sectional views
1.7 µm YBCO/LANL
2
265 A/cm, 1.56 MA/cm
I-V curve
10
8
6
V (µV)
1.7 µm YBCO
1.7 µm YBCO/ORNL
2
143 A/cm, 0.84 MA/cm
4
2
0
2.5 µm YBCO
-2
0
100
200
I (A/cm)
300
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High Performance Thick Films by MOCVD at UH
SEM plain view
I-V curve
20
SEM cross-sectional view
V (µV)
15
10
5
Transition at 453 A
0
5 µm YBCO
0
250
I (A/cm-width)
500
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Improving Performance with Pinning Enhancement
Chemical pinning enhancement by doping with secondary phase particles
1.2
Angular dependence
without doping
with doping
1
Jc/Jc(0)
0.8
0.6
0.4
0.2
0
-20
0
20
40
60
80
100
120
Angle (deg.); H = 1 T
Produced on MetOx continuous reel to reel, air to air system
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Thanks to Our Partners in Progress
SVEC
Space Vacuum
Epitaxy Center
CAM
Texas Center for
Advanced Materials
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Thanks for your attention…
Metal Oxide Technologies
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