Gummel–Poon model
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Schematic of Spice Gummel-Poon Model NPN
The Gummel–Poon model is a model of the bipolar junction transistor. It was first described in a paper
published by Hermann Gummel and H. C. Poon at Bell Labs in 1970.[1]
The Gummel–Poon model and modern variants of it are widely used via incorporation in the popular circuit
simulators known as SPICE. A significant effect included in the Gummel–Poon model is the direct current
variation of the transistor βF and βR. When certain parameters are omitted, the Gummel–Poon model reduces to
the simpler Ebers–Moll model.[1]
Model parameters
Spice Gummel–Poon model parameters
# Name
1 IS
2 BF
3 NF
4 VAF
5 IKF
6 ISE
7 NE
8 BR
9 NR
10 VAR
11 IKR
Property
Modeled
current
current
current
current
current
current
current
current
current
current
current
Parameter
transport saturation current
ideal max forward beta
forward current emission coefficient
forward Early voltage
corner for forward beta high current roll-off
B-E leakage saturation current
B-E leakage emission coefficient
ideal max reverse beta
reverse current emission coefficient
reverse Early voltage
corner for reverse beta high current roll-off
Units
A
V
A
A
V
A
Default
Value
1.00E-016
100
1
inf
inf
0
1.5
1
1
inf
inf
12 ISC
current
B-C leakage saturation current
A
0
current
B-C leakage emission coefficient
2
13 NC
resistance zero-bias base resistance
ohms 0
14 RB
15 IRB
resistance current where base resistance falls half-way to its minimum
A
inf
ohms RB
16 RBM resistance minimum base resistance at high currents
17 RE
resistance emitter resistance
ohms 0
resistance collector resistance
ohms 0
18 RC
capacitance B-E zero-bias depletion capacitance
F
0
19 CJE
20 VJE capacitance B-E built-in potential
V
0.75
0.33
21 MJE capacitance B-E junction exponential factor
22 TF
capacitance ideal forward transit time
s
0
0
23 XTF capacitance coefficient for bias dependence of TF
V
inf
24 VTF capacitance voltage describing VBC dependence of TF
25 ITF
capacitance high-current parameter for effect on TF
A
0
excess phase at freq=1.0/(TF*2PI) Hz
deg 0
26 PTF
27 CJC capacitance B-C zero-bias depletion capacitance
F
0
28 VJC capacitance B-C built-in potential
V
0.75
0.33
29 MJC capacitance B-C junction exponential factor
30 XCJC capacitance fraction of B-C depletion capacitance connected to internal base node 1
31 TR
capacitance ideal reverse transit time
s
0
32 CJS
capacitance zero-bias collector-substrate capacitance
F
0
33 VJS
capacitance substrate junction built-in potential
V
0.75
34 MJS capacitance substrate junction exponential factor
0
35 XTB
forward and reverse beta temperature exponent
0
36 EG
energy gap for temperature effect of IS
eV 1.1
37 XTI
temperature exponent for effect of IS
3
flicker-noise coefficient
0
38 KF
39 AF
flicker-noise exponent
1
40 FC
coefficient for forward-bias depletion capacitance formula
0.5
41 TNOM
parameter measurement temperature
deg.C 27
[2]
References
^ a b H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors",
Bell Syst. Tech. J., vol. 49, pp. 827–852, May–June 1970
2.
^ http://virtual.cvut.cz/dynlabmodules/ihtml/dynlabmodules/semicond/node48.html Summary
of model with schematics and equations
1.
External links
An Integral Charge Control Model of Bipolar Transistors manuscript
Bell System Technical Journal, v49: i5 May-June 1970
Summary of model with schematics and equations
Agilent manual: The Gummel–Poon Bipolar Model as implemented in the simulator SPICE
Designers-Guide.org comparison paper Xiaochong Cao, J. McMacken, K. Stiles, P. Layman, Juin J.
Liou, Adelmo Ortiz-Conde, and S. Moinian, "Comparison of the New VBIC and Conventional Gummel–
Poon Bipolar Transistor Models," IEEE Trans-ED 47 #2, Feb. 2000.
The spice Gummel-Poon model online Course on modeling and simulation.
Retrieved from "http://en.wikipedia.org/wiki/Gummel%E2%80%93Poon_model"
Categories: Transistor modeling